CN112261907A - 表面肌电信号测量中降噪的屏蔽技术及相关系统和方法 - Google Patents

表面肌电信号测量中降噪的屏蔽技术及相关系统和方法 Download PDF

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CN112261907A
CN112261907A CN201980035465.1A CN201980035465A CN112261907A CN 112261907 A CN112261907 A CN 112261907A CN 201980035465 A CN201980035465 A CN 201980035465A CN 112261907 A CN112261907 A CN 112261907A
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wearable device
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郭宁
亚历山大·巴拉尚
乔纳森·里德
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Abstract

描述了用于屏蔽可穿戴表面肌电描记术(sEMG)设备的技术。根据一些方面，sEMG设备可以包括包含至少第一差分放大器的放大电路和电气地连接到放大电路的至少两个sEMG电极。该设备还可以包括：不电气地连接到放大电路的至少一个辅助导体，其中至少一个辅助导体被配置为电气地耦合到可穿戴设备的穿戴者；以及至少部分地围绕可穿戴设备并电气地连接到至少一个辅助导体的电磁屏蔽物。

Description

表面肌电信号测量中降噪的屏蔽技术及相关系统和方法
背景
表面肌电描记术(sEMG)是涉及检测由一组或更多组肌肉在休息时和/或在活动期间产生的电活动的过程。高质量sEMG信号通常在实验室环境中使用皮肤制剂从湿电极获取，该皮肤制剂需要在电极-皮肤界面处的凝胶或糊剂的应用以提高在皮肤和电极之间的导电性。在无线通信应用中，屏蔽通常用于减少射频干扰，且通常通过用连接到接地面(ground plane)的屏蔽材料覆盖电路的全部或部分来实现。
概述
根据一些方面，提供了一种可穿戴设备，该可穿戴设备包括：放大电路，其包括至少第一差分放大器；至少两个sEMG电极，其电气地连接到放大电路；至少一个辅助导体，其不电气地连接到放大电路，其中至少一个辅助导体被配置为电气地耦合到可穿戴设备的穿戴者；以及电磁屏蔽物，其至少部分地围绕可穿戴设备并电气地连接到至少一个辅助导体。
根据一些方面，提供了一种使可穿戴设备中的噪声衰减的方法，可穿戴设备包括放大电路、电气地连接到放大电路的输入端的至少两个sEMG电极以及至少部分地围绕可穿戴设备的电磁屏蔽物，该方法包括将至少两个sEMG电极电气地耦合到可穿戴设备的穿戴者，以及将电磁屏蔽物电气地耦合到穿戴者而除了经由穿戴者以及经由在电磁屏蔽物和放大电路之间的空气以外不将电磁屏蔽物电气地耦合到放大电路。
应当认识到，前述概念和下面更详细讨论的额外概念的所有组合(假定这样的概念不相互不一致)被设想为本文公开的创造性主题的一部分。特别是，出现在本公开的结尾处的所主张的主题的所有组合被设想为本文公开的创造性主题的一部分。
附图简述
将参考下面的附图描述该技术的各种非限制性实施例。应当认识到，附图不一定按比例绘制。
图1是根据本文所述的技术的一些实施例的sEMG系统的部件的示意图；
图2示出了根据本文所述的技术的一些实施例的腕带，其具有周向地布置在其上的sEMG传感器；
图3示出了根据本文所述的技术的一些实施例的戴着图2的腕带同时在键盘上打字的用户；
图4描绘了根据一些实施例的sEMG设备的说明性放大器；
图5描绘了根据一些实施例的sEMG设备的说明性放大器，其中屏蔽物减轻由外部噪声源产生的干扰；以及
图6A-6D描绘了根据一些实施例的sEMG设备的说明性横截面视图，该sEMG设备包括围绕sEMG设备的电子器件的屏蔽物。
详细描述
使用sEMG电极和常规信号调节和处理技术获得一致的高质量sEMG信号是有挑战性的，这是部分地由于由肌纤维产生的低电压。此外，从干sEMG电极获得高质量sEMG信号通常比用湿sEMG电极更具挑战性，因为湿sEMG电极通常通过介入凝胶具有在电极和皮肤之间的较低阻抗导电路径。然而使用干sEMG电极，在电极和皮肤之间可能存在各种低电导率材料，例如空气、体毛和/或湿气，导致可能表现出相当多的噪声的不一致的电极信号。对于需要使用干电极对sEMG信号进行近实时分析的应用，从用户体验角度和开发角度两者来看，使用可靠的设备获取一致的高质量信号是重要的。如在本文提到的，sEMG信号是由一个或更多个sEMG电极产生的信号，并且通常由电极响应于由一个或更多个肌肉或肌肉组产生的电信号而产生。
发明人已经认识到并意识到，sEMG信号在本质上是低振幅的(例如在几μV到几mV的范围内)，并且特别易受外部噪声源的影响，外部噪声源可以通过空气电容地耦合到包含sEMG电极的电路。例如，外部噪声可通过空气耦合到sEMG数据采集系统的输入，尤其是在高阻抗输入的情况下。外部噪声源可包括例如AC电源线和AC供电设备，其可产生50Hz或60Hz噪声的源。虽然空气的电容比较小(例如，约为毫微微法拉(femtofarads))，但是sEMG信号的电压可以足够低，使得即使是严重衰减的外部噪声源也可以产生干扰sEMG信号的准确测量的信号。
发明人进一步认识到并意识到，屏蔽电路的常规方法在sEMG设备(即，包括一个或更多个sEMG电极的设备)中拙劣地运行。例如，常规屏蔽技术通常将导体放置在电路周围，并将导体直接连接到电路地或某个其他定义明确的电位。然而，发明人已经观察到，这种方法不明显抑制由外部噪声源在sEMG设备内产生的信号，并且在一些情况下可甚至增加在sEMG信号中的噪声量。
一些实施例目的在于用于通过将屏蔽结构电气地耦合到可穿戴设备的穿戴者的皮肤来抑制由外部噪声源在sEMG设备内产生的信号的技术，可穿戴设备包括布置在其上的sEMG传感器。屏蔽结构起作用来相当大地抑制由外部噪声源在sEMG设备中产生的信号。可以发生这样的噪声抑制，即使穿戴者的身体提供通常不定义明确的也不一定在稳定电位处的接地。
图1示意性地描绘了根据一些实施例的说明性sEMG系统100的部件。系统100包括一对sEMG电极110，其可以包括湿sEMG电极和/或干sEMG电极的任何组合。在一些实施例中，电极110可被布置为被配置成戴在用户的身体的部分上或周围的可穿戴设备的一部分。例如，在一个非限制性示例中，包括sEMG电极(例如电极110)的多个sEMG传感器周向地布置在可调整和/或弹性带例如被配置成戴在用户的手腕或臂周围的腕带或臂带周围。可替代地，至少一些sEMG传感器可以布置在被配置成固定到用户的身体的一部分的可穿戴贴片上。
在一些实施例中，sEMG电极可以是最低限度地侵入性的，并且可以包括放置在用户的真皮的全部或部分中或穿过用户的真皮的全部或部分放置的一个或更多个导电部件。在上述布置的至少一些情况中，得到的EMG信号在严格的技术意义上可以不被认为是“表面”EMG信号。尽管如此，减少外部噪声源也是最低限度地侵入性的EMG记录的基本挑战。
在一个实现中，包括sEMG电极的16个sEMG传感器周向地布置在被配置成戴在用户的下臂周围的弹性带周围。例如，图2示出了周向地布置在弹性带202周围的sEMG传感器204。应当认识到，可以使用具有任意合适数量的sEMG电极(包括湿sEMG电极和/或干sEMG电极)的任意合适数量的sEMG传感器，并且传感器/电极的数量和布置可以取决于可穿戴设备所用于的特定应用。例如，如图2所示，一些sEMG传感器204包括两个sEMG电极，而其他sEMG传感器204包括三个sEMG电极，三个电极中的中间电极是接地电极。接地电极可以被包括在一个或更多个sEMG传感器204上，以例如进一步使皮肤电位偏置和/或滤出噪声。尽管图1、图4和图5中的示意图仅示出了连接到放大器的两个或三个电极，但应当认识到，对于三个(或更多个)电极被使用的sEMG传感器204，将包括在电极和放大电路之间的相应数量的连接。在本文描述的技术的一个示例应用中，图3示出了用户306在手308上戴着弹性带302。以这种方式，sEMG传感器304可以被配置成在用户使用手指310控制键盘312时记录sEMG信号。
由sEMG电极记录的表面电位通常很小，且由sEMG电极记录的信号的放大通常是需要的。如图1所示，sEMG电极110耦合到被配置为放大由电极记录的sEMG信号的放大电路112。放大电路112的输出被提供到模数转换器(ADC)电路114，模数转换器电路114将放大的sEMG信号转换成数字信号，用于由微处理器116进一步处理。微处理器116可以由一个或更多个硬件处理器实现。从微处理器116输出的经处理的信号可以由主机120解译，主机120的示例包括但不限于台式计算机、膝上型计算机、智能手表、智能手机或任何其他计算设备。在一些实现中，主机120可以被配置为输出一个或更多个控制信号，以用于至少部分地基于从微处理器116输出的信号的分析来控制物理或虚拟设备。
如所示，sEMG系统100还包括传感器118，传感器118可以被配置为记录除了sEMG信息之外的关于用户的状态的信息的类型。例如，传感器118可以包括但不限于被配置为测量皮肤/电极温度的温度传感器、被配置为测量运动信息例如旋转和加速度的惯性测量单元(IMU)传感器、湿度传感器、心率监测传感器以及被配置为提供关于用户和/或用户的环境的信息的其他生化传感器。
根据一些实施例，图1所示的放大电路112的一个说明性实现在图4中示出。在图4所示的sEMG设备400的示例中，sEMG电极441、442和443(其例如是图1所示的电极110的实例，并且可以包括湿sEMG电极和/或干sEMG电极的任何组合)电气地耦合到用户的身体450。由于由sEMG电极提供的接触的性质，在电极441、442、443中的每一个和身体450之间的耦合分别与电阻Rin+、Rin0、Rin-相关联并且分别与电容Cin+、Cin0、Cin-相关联。这些电阻和电容的值可能由于例如下列项中的一个或更多个而期望在电极之间变化：皮肤状况(例如水合水平、介入体毛的数量)的变化、在相应电极和皮肤之间的物理接触的不同量和/或在电极441、442和443之间的制造变化。
在图4的示例中，由电极441和443感测的信号被提供到差分放大器420的输入，差分放大器420使用双电源被供电，相对于地(424)，电压+VCC(423)作为正电源以及电压-VCC(426)作为负电源。在425输出由放大器420产生的放大信号。电极442连接到电路地424。在至少一些情况下，电极442到电路地424的连接可以起作用来使身体450偏置；例如，该连接可以使在电路地处的体DC电位稳定。
如上所述，在一些情况下，外部噪声源可以通过空气耦合到sEMG设备。例如，在图4的示例中，噪声源410可以通过空气耦合到在图4中由电容器431和432代表的放大器电路的输入，电容器431和432代表在噪声源410和放大器420的输入之间的寄生电容。因此可以在输出425中产生不需要的噪声。
例如，基于来自图4所示的电极441和443的空气和放大器输入的所示寄生电容且为了简单起见忽略电阻Rin+、Rin0、Rin-，噪声源410产生的作为放大器420的输入的电压信号可以被表示为：
Figure BDA0002799632960000061
Figure BDA0002799632960000062
其中V噪声是由噪声源410产生的噪声信号(例如，由AC电力电缆和/或AC供电设备产生的60Hz信号)。注意，除了由电极441和443从身体450感测的sEMG电压信号之外，电压Vin+,噪声和Vin-,噪声也是输入到放大器420的电压信号。此外，应当认识到，在一些情况下，由于在噪声源和放大器之间的距离的微小差异，空气的电容在上述每个等式中可以不是相同的，但是为了简单起见被这样处理。
如等式1和2所示的，噪声信号V噪声被空气衰减，但是因为Cin+和Cin-通常不相等，Vin+,噪声和Vin-,噪声也不相等。作为结果，在放大器420的输入处产生差分噪声输入。此外，尽管空气的电容可以在毫微微法拉的数量级上，但是电容Cin+和Cin-通常可以在毫微法拉(nanofarads)的数量级上。作为结果，在等式1和2中的衰减因子可以约为10-6。对于许多设备，噪声信号的这样的水平的衰减(例如，导致数量级1μV的噪声信号)导致远低于设备内的信号的水平的噪声。然而，对于sEMG电极设备，由电极记录的电压通常也很小(在μV或更小的数量级上)，使得甚至所衰减的噪声信号也是有问题的，并且干扰输入到放大器420的sEMG信号。此外，因为sEMG设备常常被用在包含多个电子设备(例如，AC输电干线设备、计算机处理器、显示器等)的环境中，这种噪声的多个源可能加重这个问题。
图5描绘了根据一些实施例的sEMG设备500的说明性放大器520，其中屏蔽物560被布置成减轻由外部噪声引起的干扰。屏蔽物560可以被称为“电磁屏蔽物”，因为它减轻了电磁干扰，尽管可以认识到，在至少一些情况下，当屏蔽外部干扰源时，屏蔽物可以不与电场和磁场两者相互作用。
如同图4的示例一样，在设备500中，外部噪声源510在放大器520的输入处产生噪声信号Vin+,噪声和Vin-,噪声。为了减少这个噪声的影响，屏蔽物560布置在噪声源510和放大器520之间，并且耦合到用户的身体550。屏蔽物560产生噪声信号V噪声的额外衰减，如下面更详细描述的。屏蔽物560可以包括任何合适的一种或更多种导电材料，该导电材料包括但不限于一种或更多种金属和/或合金(例如铝、铜和/或mu金属)、导电涂料(例如基于银和/或碳的涂料)、导电织物(例如银纳米线)、导电聚合物(例如碳或石墨烯填充的聚乳酸(PLA))、导电塑料、导电橡胶、导电硅酮或其组合。屏蔽物560还可以包括可以与任一个或更多个导电部件组合的一个或更多个非导电部件，例如前述示例。
基于空气的所示寄生电容(C空气和C’空气)、来自图5所示的电极541和543的放大器输入和表示屏蔽物560到用户的身体550的耦合的电容C体，噪声源510产生的作为放大器520的输入的电压信号可以被表示为：
Figure BDA0002799632960000071
Figure BDA0002799632960000072
其中电阻R体、Rin+、Rin0、Rin-为了简单起见再一次被忽略。
C体的大小可以被预期在毫微法拉的数量级上，且因此与在等式1和2中的单个衰减因子比较的存在于等式3和4中的
Figure BDA0002799632960000073
的额外衰减因子使用在图5的示例中所示的电路配置导致在放大器520的输入处的噪声的更大衰减。
将认识到，空气531和532的寄生电容可以由于在噪声源和屏蔽物之间的环境中的微小差异而在所有情况下彼此不相同，但是为了简单起见在上面的讨论中被这样处理。类似地，将认识到，空气533和534的寄生电容可以由于在屏蔽物和放大器之间的环境中的微小差异而在所有情况下彼此不相同，但是为了简单起见在上面的讨论中被这样处理。
将认识到，屏蔽物560可以以多种方式布置在噪声源510和放大器520之间，并且屏蔽物560可以具有任何合适的几何结构以实现这种布置。在一些实施例中，屏蔽物560围住(例如完全围绕)放大器，使得屏蔽物布置在放大器和外部噪声源之间。在一些实施例中，屏蔽物560可以围绕放大器，使得屏蔽物布置在放大器和噪声源之间，噪声源可以从一些方向入射到放大器上，但是在某些方向上屏蔽物没有完全围住放大器。还将认识到，屏蔽物560可以完全围绕或部分地围绕整个sEMG系统，例如图1所示的sEMG系统100。
例如，在图2和图3所示的说明性sEMG设备的情况下，屏蔽物560可以被实现为围绕sEMG传感器204和/或304的导电层而屏蔽物不位于sEMG传感器204和/或304和穿戴者的皮肤之间。这种布置可以通过以各种方式中的任一种将屏蔽物耦合到穿戴者的身体来实现噪声的衰减，这些方式的示例将在下面被讨论。
此外，尽管在图5的示例中屏蔽物560通过sEMG电极545耦合到穿戴者的身体，屏蔽物通常可以使用任意数量的辅助导体(即，除了连接到设备的一个或更多个放大器输入的sEMG电极之外的导体)以任何合适的方式电气地耦合到穿戴者的身体。例如，屏蔽物可以通过除了sEMG电极之外的一个或更多个电极和/或通过一个或更多个其他导体电气地耦合到穿戴者的身体。在一些实现中，辅助导体可以是屏蔽物本身的一部分。
屏蔽物560可以电气地耦合到穿戴者的身体的任何合适的一个或更多个部分。例如，在被配置为戴在臂上的sEMG设备的情况下，屏蔽物可以被配置为电气地耦合到同一臂，包括臂的腹侧和/或背侧和/或身体的其他部分(例如另一只臂)。在身体的表面上的体毛的存在是用于针对表面安装电极实现与身体的良好电接触的复杂因素。将屏蔽物电气地耦合到臂的腹侧可能是有利的，因为臂的腹侧通常比背侧具有更少的体毛，导致屏蔽物到身体的更好耦合。应当认识到，根据一个或更多个因素，这些因素包括但不限于体毛的密度、可穿戴sEMG设备的类型和用户偏好，连接到屏蔽物560的电极/导体在用户的身体上的期望或最佳放置可以因用户的不同而改变。
尽管上面关于图1、图2、图3、图4和图5讨论的技术是在差分输入放大器的上下文中被讨论，但将认识到，本文描述的屏蔽技术也可以用其他类型的放大器例如单端输入放大器代替在上述示例中的差分输入放大器来实现。如可以从上面的等式3和4注意到的，噪声的振幅可以在放大器的每个单独输入处被衰减，对于除了差分输入放大器以外的放大器可能也是这种情况。
图6A-6C描绘了根据一些实施例的sEMG设备的说明性横截面视图，该sEMG设备包括完全或部分围绕sEMG设备的电子器件(例如，一个或更多个放大器或者甚至整个sEMG系统)的屏蔽物。在图6A的示例中，sEMG设备600包括围绕设备电子器件602和sEMG电极604的屏蔽物603。屏蔽物603延伸到穿戴者的身体601上以将屏蔽物电气地耦合到身体，如上面关于图5所讨论的。作为结果，屏蔽物603使可以耦合到设备电子器件602的各方位(aspect)的外部噪声源(未示出)衰减。
根据一些实施例，屏蔽物603可以包括和/或可以形成sEMG设备600的壳体的一部分。作为非限制性示例，屏蔽物603可以包括刚性导体，其形成围绕设备电子器件602的壳体并接触身体601；屏蔽物603可以包括导电材料，其布置在设备电子器件602的外部、内部上和/或嵌在围绕设备电子器件602的壳体内，使得导电材料接触身体601(例如，施加到壳体的导电涂料)；和/或屏蔽物603可以包括导电织物，其可以或者可以不附着到在设备电子器件602周围的壳体。
在图6B的示例中，sEMG设备620包括围绕设备电子器件622和sEMG电极624的屏蔽物623，并且还包括连接到屏蔽物的导电环625(以横截面示出)，导电环625将屏蔽物电气地耦合到身体，如上面关于图5所讨论的。作为结果，屏蔽物623使可以耦合到设备电子器件622的各方位的外部噪声源(未描绘)衰减。在一些实施例中，导电环可以是在穿戴者的身体621周围部分地或完全延伸的金属环。
根据一些实施例，屏蔽物623可以包括和/或可以形成sEMG设备620的壳体的一部分。作为非限制性示例，屏蔽物623可以包括形成围绕设备电子器件622的壳体并接触身体621的刚性导体；屏蔽物623可以包括导电材料，其布置在设备电子器件622的外部、内部上和/或嵌在围绕设备电子器件622的壳体内，使得导电材料接触身体621(例如，施加到壳体的导电涂料)；和/或屏蔽物623可以包括导电织物，其可以或者可以不附着到在设备电子器件622周围的壳体。
在图6C的示例中，sEMG设备640包括围绕设备电子器件642和sEMG电极644的屏蔽物643，并且还包括连接到屏蔽物的电极646，该电极646将屏蔽物电气地耦合到身体，如上面关于图5所讨论的。作为结果，屏蔽物643使可以耦合到设备电子器件642的各方位的外部噪声源(未描绘)衰减。在一些实施例中，电极646可以是sEMG电极。
根据一些实施例，屏蔽物643可以包括和/或可以形成sEMG设备640的壳体的一部分。作为非限制性示例，屏蔽物643可以包括形成围绕设备电子器件642的壳体并接触身体641的刚性导体；屏蔽物643可以包括导电材料，其布置在设备电子器件642的外部、内部上和/或嵌在围绕设备电子器件642的壳体内，使得导电材料接触身体641(例如，施加到壳体的导电涂料)；和/或屏蔽物643可以包括导电织物，其可以或者可以不附着到在设备电子器件642周围的壳体。
在图6D的示例中，设备电子器件的部件662a和电路板662b被示为单独的元件，电路板662b的导电迹线662c也被示出。说明性sEMG设备660包括覆盖设备电路板662b和在电路板662b上布线的导电迹线662c的屏蔽物663。设备660还包括sEMG电极664和连接到屏蔽物的电极666，该电极666将屏蔽物电气地耦合到身体，如上面关于图5所讨论的。作为结果，屏蔽物663使可以耦合到导电迹线662c的外部噪声源(未描绘)衰减。在一些实施例中，电极666可以是sEMG电极。作为非限制性示例，屏蔽物663可以被实现为层压到电路板662b上的屏蔽膜层。在图6D的示例中，因此屏蔽物布置在设备电子器件的一部分(即，设备电路板662b)周围，但是不一定布置在设备电子器件的部件662a周围，以便使屏蔽物使外部噪声源衰减。
在这样描述了本发明的至少一个实施例的几个方面后，应认识到，本领域中的技术人员将容易想到各种改变、修改和改进。
这种改变、修改和改进被规定为是本公开的一部分，并且被规定为在本发明的精神和范围内。此外，尽管本发明的优点被指出，但是应当认识到，不是本文描述的技术的每个实施例都将包括每个所描述的优点。一些实施例可以不实现如在本文被描述为有利的任何特征，并且在一些实例中一个或更多个所描述的特征可以被实现以实现另外的实施例。因此，前述描述和附图仅仅作为示例。
如在本文所使用的，被称为电气地耦合到彼此的元件被布置成使得在一个元件中的电位的变化可以引起在另一个元件中的电位的变化。以这种方式，在图5的示例中的噪声源510电气地耦合到放大器520和屏蔽物560。此外，如在本文所使用的，被称为电气地连接到彼此的元件被布置成使得电导体将元件直接连接在一起。例如，在图5的示例中的电极545可以电气地连接到屏蔽物560。
本文描述的DC耦合放大电路的实现采用分立的模拟电路部件。然而，应当认识到，在信号链中的放大电路和/或相关电路的全部或部分可以可选地使用AC耦合放大电路、一个或更多个专用集成电路(ASIC)和/或任何商业或定制硅实现来实现，因为实施例在这个方面中不被限制。此外，将认识到，在一些实施例中，放大电路可以不被包括在sEMG设备中，而更确切地是模数转换器(ADC)可以直接获取sEMG信号。
虽然在与EMG传感器的接口的上下文中讨论了上面讨论的示例，但是应当理解，本文描述的用于噪声降低的屏蔽技术也可以在与其他类型的传感器——包括但不限于心电图(ECG)、脑电图(EEG)、机械肌图(MMG)传感器、声肌图(SMG)传感器和电阻抗断层成像(EIT)传感器——的可穿戴接口中实现。
本文所描述的装置和技术的各种方面可以单独地、组合地或者在前述描述中所述的实施例中没有具体讨论的各种布置中被使用，且因此在它们的应用中不限于在前述描述中阐述的或者在附图中示出的部件的细节和布置。例如，在一个实施例中描述的方面可以以任何方式与在其他实施例中描述的方面组合。
在权利要求中使用顺序术语例如“第一”、“第二”、“第三”等来修饰权利要求要素并不单独地暗示一个权利要求要素相对于另一个权利要求要素的任何优先级、先后次序或顺序或其中方法的动作被执行的时间顺序，而是仅仅用作标签以区分开具有某个名称的一个权利要求要素与具有相同名称的另一个权利要求要素(但针对顺序术语的使用)，从而区分权利要求要素。
另外，本文使用的措辞和术语是为了描述的目的，而不应被视为限制性的。在本文中“包括(including)”、“包括(comprising)”、或“具有”、“包含”、“涉及”及其变形的使用意欲包括其后列举的项目和其等价物以及额外的项目。

Claims (24)

1.一种可穿戴设备，包括：
放大电路，其包括至少第一差分放大器；
至少两个sEMG电极，其电气地连接到所述放大电路；
至少一个辅助导体，其不电气地连接到所述放大电路，其中所述至少一个辅助导体被配置为电气地耦合到所述可穿戴设备的穿戴者；以及
电磁屏蔽物，其至少部分地围绕所述可穿戴设备，并且电气地连接到所述至少一个辅助导体。
2.根据权利要求1所述的可穿戴设备，其中所述至少两个sEMG电极中的一个或更多个是干sEMG电极。
3.根据权利要求2所述的可穿戴设备，其中所述至少两个sEMG电极是干sEMG电极。
4.根据权利要求1所述的可穿戴设备，其中所述电磁屏蔽物围绕所述第一差分放大器的至少一个输入端。
5.根据权利要求1所述的可穿戴设备，其中所述电磁屏蔽物包括金属。
6.根据权利要求1所述的可穿戴设备，其中所述电磁屏蔽物包括导电织物。
7.根据权利要求1所述的可穿戴设备，其中所述电磁屏蔽物包括施加到所述可穿戴设备的所述至少一部分的导电涂料。
8.根据权利要求1所述的可穿戴设备，其中所述电磁屏蔽物包括导电带。
9.根据权利要求1所述的可穿戴设备，其中所述电磁屏蔽物包括导电塑料。
10.根据权利要求1所述的可穿戴设备，其中所述第一差分放大器包括场效应晶体管(FET)。
11.根据权利要求1所述的可穿戴设备，其中所述第一差分放大器被配置为具有至少1GΩ的输入阻抗。
12.根据权利要求1所述的可穿戴设备，其中所述至少一个辅助导体包括一个或更多个sEMG电极。
13.根据权利要求1所述的可穿戴设备，其中所述至少一个辅助导体包括导电圆柱体、环和/或环面。
14.根据权利要求1所述的可穿戴设备，还包括壳体，并且其中所述电磁屏蔽物布置在所述壳体内。
15.根据权利要求1所述的可穿戴设备，还包括壳体，并且其中所述电磁屏蔽物包括施加到所述壳体的导电涂料。
16.根据权利要求1所述的可穿戴设备，其中所述至少两个sEMG电极中的一个或更多个被配置为穿过穿戴者的真皮的至少某一部分。
17.一种使可穿戴设备中的噪声衰减的方法，所述可穿戴设备包括放大电路、电气地连接到所述放大电路的输入端的至少两个sEMG电极以及至少部分围绕所述可穿戴设备的电磁屏蔽物，所述方法包括：
将所述至少两个sEMG电极电气地耦合到所述可穿戴设备的穿戴者；以及
将所述电磁屏蔽物电气地耦合到所述穿戴者，而除了经由所述穿戴者以及经由所述电磁屏蔽物和所述放大电路之间的空气以外不将所述电磁屏蔽物电气地耦合到所述放大电路。
18.根据权利要求17所述的方法，其中所述至少两个sEMG电极中的一个或更多个是干sEMG电极。
19.根据权利要求18所述的方法，其中所述至少两个sEMG电极是干sEMG电极。
20.根据权利要求17所述的方法，其中将所述电磁屏蔽物电气地耦合到所述穿戴者包括将所述电磁屏蔽物电气地连接到所述可穿戴设备的不同于所述至少两个sEMG电极的至少一个辅助电极。
21.根据权利要求17所述的方法，其中将所述至少两个sEMG电极电气地耦合到所述可穿戴设备的所述穿戴者包括将包括所述至少两个sEMG电极的所述可穿戴设备布置在所述穿戴者的臂上。
22.根据权利要求17所述的方法，其中将所述电磁屏蔽物电气地耦合到所述穿戴者包括将所述电磁屏蔽物电气地耦合到所述穿戴者的臂的腹侧。
23.根据权利要求17所述的方法，其中所述电磁屏蔽物围绕所述第一差分放大器的至少一个输入端。
24.根据权利要求17所述的方法，其中所述放大电路包括第一电接地，并且所述穿戴者的身体具有第二电接地，并且其中所述第一电接地和所述第二电接地在不同的电位处。
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