CN112259602A - Small-size TFT and display panel - Google Patents

Small-size TFT and display panel Download PDF

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CN112259602A
CN112259602A CN202011079495.3A CN202011079495A CN112259602A CN 112259602 A CN112259602 A CN 112259602A CN 202011079495 A CN202011079495 A CN 202011079495A CN 112259602 A CN112259602 A CN 112259602A
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tft
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area
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CN112259602B (en
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张伟彬
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • H01L29/78666Amorphous silicon transistors with normal-type structure, e.g. with top gate
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
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    • H01ELECTRIC ELEMENTS
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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Abstract

The invention provides a small-sized TFT and a display panel, wherein the small-sized TFT comprises a source electrode and a drain electrode which are arranged in a stacking mode, an insulating layer arranged between the source electrode and the drain electrode, an active layer connected with the source electrode and the drain electrode respectively, and a grid electrode corresponding to the active layer. Compared with the prior art, the small-size TFT adopts a double-layer source-drain design, so that the structural space of the TFT is smaller; the display panel uses the small-size TFT, is favorable for it to arrange compactly because of the TFT size reduces, can solve the screen folding region TFT of folding screen often because of buckling the electric property change or lose efficacy, the camera pixel and the formation of image definition are often reduced because of the TFT separation to the camera under the screen, the fingerprint often reduces because of the TFT recognition rate under the screen, and peripheral drive circuit place region can't accomplish the technical problem of full face screen.

Description

Small-size TFT and display panel
Technical Field
The invention relates to the technical field of display panels, in particular to a small-size TFT and a display panel.
Background
With the continuous development of display panel technology, the forms of display panels are more diversified. Foldable flexible screens, full-screen, display screens with fingerprint functions under screens and display screens with camera functions under screens are gradually entering the public field of vision and are also one of the hot spots concerned by consumers.
At present, a conventional Thin Film Transistor (TFT) structure is shown in fig. 1, a Source/Drain (SD, Source/Drain) is a wiring in the same layer formed by one-time Film formation, the TFT size is large, and spatial arrangement is limited. The existing TFT has many problems due to space limitations, such as: the problems that a TFT in a screen folding area of a folding screen is often changed or loses efficacy due to bending, a camera under the screen is often reduced in pixel and imaging definition due to TFT separation, fingerprints under the screen are often reduced due to TFT identification rate, a peripheral driving circuit cannot be arranged in the area of the peripheral driving circuit, and the like are solved.
Disclosure of Invention
The invention provides a small-size TFT and a display panel, and aims to solve the technical problems that due to the fact that the size of the TFT is too large, the TFT in a screen folding area fails to be bent, a camera area under a screen is blocked by the TFT, the fingerprint recognition rate under the screen is low, and a peripheral circuit area cannot achieve a full screen.
The present invention provides a small-sized TFT, which includes:
the semiconductor device includes a source electrode and a drain electrode which are stacked, an insulating layer which is disposed between the source electrode and the drain electrode, an active layer which is connected to the source electrode and the drain electrode, respectively, and a gate electrode which corresponds to the active layer.
The small-size TFT comprises a channel region and a channel which is positioned in the channel region and sequentially penetrates through the drain electrode and the insulating layer, and the active layer is respectively connected with the source electrode and the drain electrode through the channel.
The orthographic projection of the gate on the insulating layer at least covers the orthographic projection of the channel on the insulating layer.
The invention provides a display panel, which comprises a substrate, a plurality of small-sized TFTs arranged on the substrate, and a plurality of pixel electrodes arranged on the small-sized TFTs; each small-sized TFT is connected with one pixel electrode.
The display panel comprises a conventional display area and at least one functional area adjacent to the conventional display area;
the plurality of pixel electrodes comprise a plurality of first pixel electrodes arranged in the normal display area and a plurality of second pixel electrodes arranged in the functional area;
the plurality of small-sized TFTs include a plurality of first small-sized TFTs connected corresponding to the respective first pixel electrodes, and a plurality of second small-sized TFTs connected corresponding to the respective second pixel electrodes;
the second small-sized TFT is disposed within the normal display area.
Further, the second small-sized TFT is disposed at a side of the normal display region close to the functional region.
The functional area comprises at least one of a screen bending area, a screen lower fingerprint area and a screen lower camera area.
The display panel comprises a frame display area and a non-frame display area adjacent to the frame display area;
the plurality of pixel electrodes comprise a plurality of third pixel electrodes arranged in the frame display area and a plurality of fourth pixel electrodes arranged in the non-frame display area;
the plurality of small-sized TFTs include a plurality of third small-sized TFTs connected corresponding to the respective third pixel electrodes, and a plurality of fourth small-sized TFTs connected corresponding to the respective fourth pixel electrodes;
the third small-sized TFT is disposed in the non-frame display area.
Further, the third small-sized TFT is disposed on a side of the non-frame display area close to the frame display area.
The display panel comprises a peripheral driving circuit connected with each small-size TFT, and the peripheral driving circuit is arranged in the frame display area.
A metal bridging layer is arranged between the pixel electrode and the small-size TFT, and the pixel electrode is connected with the small-size TFT through the metal bridging layer; the metal bridging layer is at least partially overlapped with a grid electrode of the small-size TFT.
The invention has the beneficial effects that: the invention provides a small-size TFT and a display panel.A source electrode and a drain electrode are arranged in a laminated manner, so that compared with the prior art, the TFT has smaller structural space; the display panel uses the small-size TFT, the size of the TFT is reduced, so that the arrangement space of the display panel is smaller, at least parts of a folding screen bending area, a fingerprint identification area under the screen, a camera area under the screen and the like can be normally displayed without the TFT, the screen folding area of the folding screen can not cause the TFT to generate electrical change or failure due to bending, the camera pixel and the imaging definition of the camera area under the screen are increased, the fingerprint identification rate under the screen is improved, and meanwhile, a peripheral driving circuit can be arranged in the display area of the display panel to realize the full-screen design.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art TFT structure;
FIG. 2 is a schematic diagram of a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a display panel according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a pixel and TFT connection according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a display panel according to an embodiment of the present invention;
FIG. 6 is a schematic top view of a display panel structure according to an embodiment of the present invention;
FIG. 7 is a flowchart illustrating a method for fabricating a display panel according to an embodiment of the present invention;
fig. 8 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention.
Reference numerals:
1-small size TFT; 2-SD layer; 10-a flexible substrate; 11-a first insulating layer; 12-a second insulating layer; 13-a third insulating layer; 14-a fourth insulating layer; 15-an organic layer; 16-pixel definition layer; 17-a barrier; 21-a source electrode; 22-a drain electrode; 23-a metal lap joint layer; 24-an active layer; 25-a gate; 26-pixel electrodes; 100-a regular display area; 200-functional region; 110-a bezel display area; 120-a non-bezel display area; 130-peripheral driver circuitry; 300-pixels; 400-7T1C circuit.
Detailed Description
While the embodiments and/or examples of the present invention will be described in detail and fully with reference to the specific embodiments thereof, it should be understood that the embodiments and/or examples described below are only a part of the embodiments and/or examples of the present invention and are not intended to limit the scope of the invention. All other embodiments and/or examples, which can be obtained by a person skilled in the art without making any inventive step, based on the embodiments and/or examples of the present invention, belong to the scope of protection of the present invention.
Directional terms used in the present invention, such as [ upper ], [ lower ], [ left ], [ right ], [ front ], [ rear ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terminology is used for the purpose of describing and understanding the invention and is in no way limiting. The terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature.
Referring to fig. 1, in the conventional TFT structure, the SD layer 2 is formed by the same layer of wiring, and the SD layer 2 is disposed on two side regions of the active layer. The existing TFT occupies a larger transverse space, and the whole size of the TFT is limited, so that the structure of the TFT is difficult to shrink.
Referring to fig. 2, a first embodiment of the present invention is shown.
The present invention provides a small-sized TFT, which includes:
a source electrode 21 and a drain electrode 22 which are stacked, a second insulating layer 12 which is disposed between the source electrode 21 and the drain electrode 22, an active layer 24 which is connected to the source electrode 21 and the drain electrode 22, respectively, and a gate electrode 25 which corresponds to the active layer 24. The source electrode 21 and the drain electrode 22 are stacked up and down, so that the size of the TFT can be obviously reduced; the active layer 24 is connected to the source electrode 21 and the drain electrode 22, respectively, and the position of the active layer 24 can be set around the source electrode 21 and the drain electrode 22, and the TFT size can be reduced as well.
The small-sized TFT1 includes a channel region through which the active layer 24 is connected to the source electrode 21 and the drain electrode 22, and a channel located in the channel region and sequentially passing through the drain electrode 22 and the second insulating layer 12. The active layer 24 is disposed between the source electrode 21 and the drain electrode 22, and the source electrode 21, the drain electrode 22, and the active layer 24 are stacked in this order, which is more advantageous in terms of structure for downsizing the TFT.
The orthographic projection of the gate 25 on the second insulating layer 12 at least covers the orthographic projection of the channel on the insulating layer. The gate electrode 25 corresponds to the active layer 24 in an overlapping manner in the orthogonal projection direction, and as shown in fig. 2, the gate electrode 25 has the same shape as the active layer 24, and the insulating layer between the gate electrode 25 and the active layer 24 has a uniform width. Meanwhile, the method is suitable for TFTs with different types of grids, such as a top grid type structure or a bottom grid type structure, and the applicability of the small-size TFT is wider.
Further, the length of the channel can be adjusted by etching the width of the drain electrode; the active layer is made of a semiconductor material, which may be a-Si (amorphous silicon) prepared by Chemical Vapor Deposition (CVD), doped a-Si, or Indium Gallium Zinc Oxide (IGZO).
Referring to fig. 2, a second embodiment of the present invention is shown.
The present invention provides a display panel, comprising: a substrate, a plurality of small-sized TFTs 1 as described above on the substrate, a plurality of pixel electrodes disposed on the small-sized TFTs 1, one pixel electrode connected to each of the small-sized TFTs 1. The display panel uses the small-size TFT, the small-size TFT is correspondingly connected with the pixel electrode, the better arrangement of the small-size TFT is facilitated, especially in a bending area of a folding screen, a fingerprint area under the screen or a camera area under the screen, the occupied space of the small-size TFT is smaller, at least part of structures without the TFT in the areas can also be displayed normally, the electrical change or failure of the TFT in the bending area due to bending can be reduced, the camera pixel and the imaging definition of the camera under the screen, which are reduced due to the TFT separation, are increased, and the recognition rate of the fingerprint under the screen, which is reduced due to the TFT, is improved.
The specific structure of the display panel includes a flexible substrate 10, a first insulating layer 11 formed on the flexible substrate 10, a source 21 formed on the first insulating layer 11, a second insulating layer 12 formed on the source 21, a drain 22 formed on the second insulating layer 12, an active layer 24 and a channel region formed between the source 21 and the drain 22, and a channel located in the channel region and sequentially passing through the drain 22 and the second insulating layer 21, the active layer 24 being connected to the source 21 and the drain 22 through the channel, respectively, a third insulating layer 13 formed on the active layer 24 and the drain 22, a gate 25 formed on the third insulating layer 13, the gate 25 having the same shape as the active layer 24, the third insulating layer 13 having the same width as the active layer 24, a fourth insulating layer 14 formed on the gate 25 and covering the third insulating layer 13, a metal bridging layer 23 formed on the fourth insulating layer 14 and bridging the drain 22 through an opening, a first insulating layer 23, a second insulating layer 12 formed on the flexible substrate 10, a second insulating layer 24 formed on the flexible substrate, the pixel electrode 26 is connected to the drain electrode 22 via the metal bridging layer 23, and the pixel defining layer 16 is formed on the pixel electrode 26.
The present invention also provides a third embodiment, which is different from the second embodiment in that whether the metal lap joint layer 23 in the display panel is provided or not is selective. When the metal strap layer 23 is not provided, the pixel electrode 26 on the upper layer is directly electrically connected to the drain electrode 22 through the opening. The place where the metal bridging layer 23 and the gate 25 are at least partially overlapped can form a capacitor, and the metal bridging layer 23 can be distributed as required for the convenience of wiring.
Referring to FIGS. 3-4, a fourth embodiment of the present invention is shown.
A display panel, the display panel further comprising: the display device comprises a conventional display area 100 and at least one functional area 200 adjacent to the conventional display area 100, wherein the functional area 200 comprises at least one of a folding screen bending area, an under-screen camera area and an under-screen fingerprint area; the functional area 200 of the display panel, which may be an OLED display panel, includes a folded screen bending area. The functional area 200 of the display panel, which may be an OLED display panel or an LCD display panel, includes an under-screen camera area and/or an under-screen fingerprint area.
The plurality of pixel electrodes include a plurality of first pixel electrodes disposed in the normal display area 100 and a plurality of second pixel electrodes disposed in the functional area 200;
the plurality of small-sized TFTs include a plurality of first small-sized TFTs connected corresponding to the respective first pixel electrodes, and a plurality of second small-sized TFTs connected corresponding to the respective second pixel electrodes; the second small-sized TFT is disposed within the conventional display area 100. Further, the second small-sized TFT is disposed at a side of the normal display area 100 close to the functional area 200.
The second small-sized TFTs may be closely arranged along one side of the functional region 200 in the conventional display region 100, so that there are no TFTs in the functional region 200; because the size of the TFT structure is reduced, the conventional display area can accommodate the TFT units in a folding screen bending area, a lower screen image pickup area or a lower screen fingerprint area, so that no TFT exists in the folding screen bending area, the lower screen image pickup area or the lower screen fingerprint area, pixel electrodes in the areas are electrically connected with the TFT units compressed to the conventional display area through metal lap joint layers, normal display of at least part of the TFT-free structures in the screen bending area, the lower screen image pickup area or the lower screen fingerprint area can be realized, and meanwhile, the adverse effects that the TFT in the bending area is electrically changed or loses efficacy, the pixel and the imaging definition of a lower screen camera are reduced due to the blockage of the TFT, and the identification rate of the lower screen fingerprint is reduced due to the TFT are reduced.
The peripheral driving circuit is located at the edge of the display panel, and occupies a certain space at the edge of the display panel, so that the display panel cannot be a full-screen. In order to solve the above problems, the present invention provides an embodiment.
Referring to fig. 5, a fifth embodiment of the present invention is shown.
A display panel includes a bezel display area 110, a non-bezel display area 120 adjacent to the bezel display area 110;
the plurality of pixel electrodes include a plurality of third pixel electrodes disposed in the frame display area 110 and a plurality of fourth pixel electrodes disposed in the non-frame display area 120;
the plurality of small-sized TFTs include a plurality of third small-sized TFTs connected corresponding to the respective third pixel electrodes, and a plurality of fourth small-sized TFTs connected corresponding to the respective fourth pixel electrodes; the third small-sized TFT is disposed in the non-bezel display area 120. Further, the third small-sized TFT is disposed on a side of the non-bezel display area 120 close to the bezel display area 110. The display panel includes a peripheral driving circuit connected to the small-sized TFT, and the peripheral driving circuit is disposed in the frame display region 110. The third small-sized TFTs may be closely arranged along one side of the bezel display area in the non-bezel display area 120, so that there are no TFTs in the bezel display area 110; because the structural size of the TFT in the present invention is reduced, the small-sized TFTs in the non-frame display area 120 are compactly arranged, and there is enough space in the frame display area 110 to accommodate the peripheral driving circuit, so that the peripheral driving circuit moves into the frame display area 110, thereby implementing the overall screen design of the display panel.
Based on the fourth and fifth embodiments, please refer to fig. 6, a sixth embodiment is provided in the present invention.
A display panel comprises a regular display area 100, at least one functional area 200 adjacent to the regular display area 100, wherein the regular display area 100 comprises a frame display area 110 and a non-frame display area 120 adjacent to the frame display area 110; the functional area 200 comprises at least one of a folding screen bending area, a screen lower shooting area and a screen lower fingerprint area; as shown in fig. 6, the display panel has a plurality of functional regions 200, different functional regions 200 can implement different functions, the periphery of the functional regions 200 is surrounded by the non-frame display region 120, and the periphery of the display panel is the frame display region 110. The functional area 200 of the display panel, which may be an OLED display panel, includes a folded screen bending area. The functional area 200 of the display panel, which may be an OLED display panel or an LCD display panel, includes an under-screen camera area and/or an under-screen fingerprint area.
The plurality of pixel electrodes include a plurality of first pixel electrodes disposed in the normal display area 100 and a plurality of second pixel electrodes disposed in the functional area 200; the plurality of first pixel electrodes include a plurality of third pixel electrodes disposed in the frame display area 110 and a plurality of fourth pixel electrodes disposed in the non-frame display area 120;
the plurality of small-sized TFTs include a plurality of first small-sized TFTs connected corresponding to the respective first pixel electrodes, and a plurality of second small-sized TFTs connected corresponding to the respective second pixel electrodes; the plurality of first small-sized TFTs include a plurality of third small-sized TFTs connected in correspondence with the respective third pixel electrodes, and a plurality of fourth small-sized TFTs connected in correspondence with the respective fourth pixel electrodes;
the second small-sized TFT is disposed in the regular display area 100, and the third small-sized TFT is disposed in the non-bezel display area 120;
further, the second small-sized TFT is disposed in the regular display area 100 at a position close to the functional area 200; the third small-sized TFT is disposed on a side of the non-bezel display area 120 close to the bezel display area 110;
the display panel includes a peripheral driving circuit 130 connected to the small-sized TFT, and the peripheral driving circuit 130 is disposed in the frame display region 110.
The functional area of the display panel of the embodiment comprises a screen bending area, a camera area under the screen or a fingerprint area under the screen, and the conventional display area also comprises a frame display area and a non-frame display area; the display panel in the technical scheme of this embodiment can reach the advantage that there is not TFT structure in the region of screen bending or the region of making a video recording under the screen or the fingerprint region under the screen, can make peripheral drive circuit move in to the frame display area again, realizes display panel's comprehensive screen design.
Referring to fig. 7-8, a seventh embodiment of the present invention is shown. The invention also provides a manufacturing method of the display panel, which comprises the display panel and comprises the following steps:
s1, providing a substrate;
s2, forming a plurality of small-sized TFTs on the substrate;
s3, forming a plurality of pixel electrodes on the small-sized TFTs, each of the small-sized TFTs being connected with one of the pixel electrodes.
Further, the manufacturing method of the small-size TFT comprises the following steps:
s1, providing a substrate;
s21, forming a first insulating layer 11 on the substrate;
s22, forming a source electrode 21 on the first insulating layer 11 by film formation and etching; the source electrode 21 is made of single-layer or multi-layer metal material and is overlaid with heavily doped B prepared by Chemical Vapor Deposition (CVD)+Or P+a-Si (amorphous silicon);
s23, forming a second insulating layer 12 on the source electrode 21;
s24, forming a drain electrode 22 on the second insulating layer 12 by film formation and etching; the drain 22 is a single-layer or multi-layer metal material and is overlaid with heavily doped B prepared by Chemical Vapor Deposition (CVD)+Or P+a-Si (amorphous silicon);
s25, forming an active layer 24 and a channel region between the source electrode 21 and the drain electrode 22, and a channel located in the channel region and sequentially passing through the drain electrode 22 and the second insulating layer 12, the active layer 24 being respectively connected with the source electrode 21 and the drain electrode 22 through the channel; the active layer 24 is made of a semiconductor material, which may be a-Si (amorphous silicon) prepared by Chemical Vapor Deposition (CVD), doped a-Si, or Indium Gallium Zinc Oxide (IGZO);
s26, forming a gate 25 corresponding to the active layer 24; the gate 25 is made of a single layer or a stack of layers of metal.
The invention provides a small-size TFT and a display panel.A source electrode and a drain electrode are arranged in a laminated manner, so that compared with the prior art, the TFT has smaller structural space; the display panel uses the small-size TFT, which is beneficial to the smaller arrangement space due to the reduced size of the TFT, and can ensure that at least part of the folding screen bending area, the fingerprint identification area under the screen, the camera area under the screen and the like can normally display without the TFT, the screen folding area of the folding screen can not cause the electrical change or failure of the TFT due to bending, the camera pixel and the imaging definition of the camera area under the screen are increased, the fingerprint identification rate under the screen is improved, and meanwhile, the peripheral driving circuit can be arranged under the pixel electrode of the display area of the display panel to realize the full-screen design.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.

Claims (11)

1. A small-sized TFT includes a source electrode and a drain electrode which are stacked, an insulating layer which is provided between the source electrode and the drain electrode, an active layer which is connected to the source electrode and the drain electrode, respectively, and a gate electrode which corresponds to the active layer.
2. The small-sized TFT according to claim 1, wherein the small-sized TFT includes a channel region, and a channel located in the channel region and sequentially passing through the drain electrode and the insulating layer, the active layer being connected to the source electrode and the drain electrode through the channel, respectively.
3. The small-sized TFT according to claim 2, wherein an orthographic projection of the gate electrode on the insulating layer covers at least an orthographic projection of the channel on the insulating layer.
4. A display panel comprising a substrate, a plurality of small-sized TFTs according to any one of claims 1 to 3 provided on the substrate, and a plurality of pixel electrodes provided on the small-sized TFTs; each small-sized TFT is connected with one pixel electrode.
5. The display panel of claim 4, wherein the display panel comprises a regular display area, at least one functional area adjacent to the regular display area;
the plurality of pixel electrodes comprise a plurality of first pixel electrodes arranged in the normal display area and a plurality of second pixel electrodes arranged in the functional area;
the plurality of small-sized TFTs include a plurality of first small-sized TFTs connected corresponding to the respective first pixel electrodes and a plurality of second small-sized TFTs connected corresponding to the respective second pixel electrodes;
the second small-sized TFT is disposed within the normal display area.
6. The display panel according to claim 5, wherein the second small-sized TFT is disposed on a side close to the functional region in the normal display region.
7. The display panel of claim 6, wherein the functional area comprises at least one of a screen bend area, an off-screen fingerprint area, and an off-screen camera area.
8. The display panel of claim 4, wherein the display panel comprises a bezel display area, a non-bezel display area adjacent to the bezel display area;
the plurality of pixel electrodes comprise a plurality of third pixel electrodes arranged in the frame display area and a plurality of fourth pixel electrodes arranged in the non-frame display area;
the plurality of small-sized TFTs include a plurality of third small-sized TFTs connected corresponding to the respective third pixel electrodes, and a plurality of fourth small-sized TFTs connected corresponding to the fourth pixel electrodes;
the third small-sized TFT is disposed in the non-frame display region.
9. The display panel according to claim 8, wherein the third small-sized TFT is disposed on a side of the non-bezel display area close to the bezel display area.
10. The display panel according to claim 8, wherein the display panel includes a peripheral driver circuit connected to each of the small-sized TFTs, the peripheral driver circuit being disposed in the bezel display area.
11. The display panel according to claim 4, wherein a metal bridge layer is provided between the pixel electrode and the small-sized TFT, the pixel electrode and the small-sized TFT are connected by the metal bridge layer, and the metal bridge layer at least partially overlaps with a gate electrode of the small-sized TFT.
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