CN112255716A - Efficient light absorption device based on structural symmetry defect and preparation method and application thereof - Google Patents
Efficient light absorption device based on structural symmetry defect and preparation method and application thereof Download PDFInfo
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Abstract
High-efficient light absorbing device based on structural symmetry lacks, including basement (1), grating (2) and absorbent material (3), grating (2) include grating layer and rete, and the grating layer is located the rete, and absorbent material (3) are located between rete and basement (1), have grooving (4) on the rete between the grid, make grating (2) symmetry break. The efficient light absorption device based on structural symmetry defect can realize efficient graphene light absorption, has high structural preparation tolerance, angle tolerance and refractive index sensing function, and has good application prospects in the fields of photoelectric detection, photothermal conversion, photoelectric imaging, optical filtering, fluorescence spectroscopy, biosensing and the like.
Description
Technical Field
The invention relates to the field of nanophotonics, photoelectric detection and optical sensing, in particular to a graphene efficient light absorption device based on structural symmetry deficiency and application thereof.
Background
The graphene is an ideal two-dimensional material which is composed of carbon atoms and has a hexagonal honeycomb lattice arrangement, has ultrahigh carrier mobility although only the thickness of a single atomic layer, has adjustable Fermi level by doping or applying an external voltage, has the advantages of good photoelectric, mechanical and chemical stability and the like, and has great application value in the crossing fields of physics, chemistry, materials, electronics and the like. Particularly, in recent years, a series of novel discoveries about graphene include that two layers of graphene are stacked into a magic angle to realize high-temperature superconductivity, a flexible graphene photoelectric detector can be applied to wearable equipment, laser induction can realize irreversible structural phase change of the graphene, and the like, so that the application of the graphene in various high-technology fields is continuously expanded and promoted.
In various application scenarios related to photoelectric detection, in order to improve the interaction between light and graphene, an effective way is to improve the absorption efficiency of graphene to light. In the middle infrared to terahertz wave band, because the graphene has obvious metal characteristics, the graphene plasma can be excited, and the optical field can be highly localized and enhanced near the graphene layer, so that the light absorption efficiency of the graphene can be effectively improved. However, in the visible light to near infrared band, graphene mainly represents the property of medium, and in this case, single-layer graphene can be similar to ultra-thin absorption coal with the thickness of 0.34nm, and the absorption efficiency of the graphene to light is determined by a fine structure constant
Determining, where e is a unit charge amount,
in order to approximate Planck constant, c is the light speed in vacuum, and the absorption efficiency of the single-layer graphene to light in the visible light to near infrared band is only 2.3%, which greatly restricts the application of the graphene in the fields of photoelectric detection, sensing and the like.
Currently, in order to improve the light absorption efficiency of graphene in the visible light to near-infrared band, the following three methods are mainly adopted: (1) the absorption enhancement of graphene to light is improved based on electromagnetic field enhancement caused by resonance effect by utilizing various resonance phenomena in a micro-nano structure, such as Fabry-Perot (Fabry-Perot) resonance, guided mode resonance, surface plasmon resonance, Fano (Fano) resonance and the like. However, the method for improving the light absorption of graphene based on the resonance effect only tends to have a low light absorption efficiency. (2) By utilizing the micro-nano structure with the metal reflector, namely, the graphene is integrated into the micro-nano structure with the metal reflector, based on the resonance phenomenon of the micro-nano structure, the high reflection effect provided by the metal reflector is utilized, and the high-efficiency absorption and enhancement of the graphene to light can be realized under the condition of strict coupling. (3) The method is characterized in that a full-medium micro-nano structure containing a Bragg reflector is utilized, namely, graphene and the full-medium micro-nano structure containing the Bragg reflector are integrated, a resonance mechanism of the micro-nano structure and a high reflection effect of a full-medium Bragg film stack are utilized, high-efficiency absorption enhancement of the graphene to light is realized at a resonance wavelength, and a device can be constructed by using a non-absorbing medium material, so that perfect or near-perfect light absorption enhancement of single-layer graphene can be realized. However, this method requires a bragg multilayer film stack constructed by high and low refractive index materials, and requires the use of two or more dielectric materials, and since the number of film layers is large (generally 10 pairs, about 20 layers), the overall thickness of the device is large, and the difficulty in manufacturing is also increased.
In summary, in the conventional method and apparatus for enhancing absorption of graphene based on a micro-nano structure, in order to achieve high-efficiency absorption enhancement of graphene to light, various resonance effects are often required to be used, and then a metal mirror or a full-dielectric bragg mirror is used. The enhanced absorption of light by the graphene is inevitably impaired due to ohmic losses in the metal mirror. The all-dielectric Bragg reflector needs more than two dielectric materials, and the number of required film layers is large, so that the whole thickness of the device is large, and the ultra-thin photonic device which is ultra-compact and easy to integrate is not easy to realize; in addition, the Bragg reflector constructed by the high-low all-dielectric multilayer film stack has extremely high requirements on the preparation technology and the processing precision, and is not beneficial to the application of low cost.
Disclosure of Invention
[ problem ] to
In the existing fields of nanophotonics and photoelectric detection, graphene high-efficiency light absorption is realized in visible light to near-infrared wave bands, and various resonance effects are often needed, and then a metal reflector or an all-dielectric Bragg reflector is used. The ohmic loss of the metal reflector can weaken the absorption efficiency of the graphene to light, the all-dielectric Bragg reflector needs more than two materials, and the film layer number is large, the whole thickness is large, the requirement on the preparation technology is high, and the low-cost application is not facilitated.
[ solution ]
The invention aims to provide a graphene high-efficiency light absorption device based on structural symmetry deficiency and application thereof, so as to solve the problems of low absorption efficiency, complex structure, high preparation difficulty, high cost and the like of the conventional graphene light absorption device.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a high-efficiency light absorption device based on structural symmetry defect comprises a substrate, a grating and an absorption material. The grating comprises a grating layer and a film layer, the grating layer is positioned on the film layer, and the absorbing material is positioned between the film layer and the substrate. The film layer between the grids is provided with grooves, so that the symmetry of the grating is broken. The thicknesses of the grating layer and the film layer are respectively d1And d2The width of the grating is w, the period of the grating is p, the width of the groove is s, preferably, d is more than or equal to 4201≤460nm；230≤d2≤270nm；670≤p≤710nm；0≤s≤80nm。
Preferably, the substrate is a quartz substrate.
Preferably, the grating is a high-refractive-index thin film material such as silicon or gallium arsenide, titanium dioxide, zinc sulfide, zinc selenide and the like.
Preferably, the high refractive index thin film material is silicon, gallium arsenide, titanium dioxide, zinc sulfide or zinc selenide.
Preferably, the grating is a one-dimensional, square, L-shaped, T-shaped, cross, ring or cylindrical grating.
Preferably, the absorbing material is not only single-layer graphene but also a two-dimensional material such as a two-dimensional transition metal sulfide.
The invention also provides a method for improving the tolerance of the light absorption angle of the graphene, the device is used as a light absorption device, and the incident mode adopts full-cone incidence.
The invention also provides a preparation method of the high-efficiency light absorption device based on the structural symmetry defect, which comprises the following steps:
(1) preparing single-layer graphene on a quartz substrate;
(2) depositing a silicon thin film on a quartz substrate having single-layer graphene;
(3) preparing a photoresist film with a certain thickness on the silicon film;
(4) exposing the photoresist, preparing a microstructure pattern on the photoresist film by using a mask, developing, fixing and baking, and preparing a silicon grating with a certain period and an upper-layer structure and a lower-layer structure by reactive ion beam etching;
(5) and manufacturing a notch in the lower layer structure of the silicon grating by two times of etching.
The invention also provides the application of the device in photoelectric detection, photothermal conversion, optical sensing, fluorescence spectroscopy, optical filtering or higher harmonic excitation.
[ advantageous effects ]
The present invention employs a subwavelength structure (i.e., p)<λ0) The reduction of absorption efficiency caused by the high-order diffraction of the grating can be avoided, and the high absorption efficiency can be obtained; high absorption is realized by breaking the symmetry of the structure, high-efficiency absorption of graphene to light can be realized based on a single material, material selection and a device structure are facilitated to be simplified, and the device preparation difficulty is further reduced;
by selecting silicon materials which are widely used in the field of microelectronics and have relatively mature processes, the silicon-based ultrathin photonic device which is ultra-compact, easy to integrate and low in cost is easy to realize;
the graphene light absorption enhancement of the invention is derived from the structural symmetry break, so that the light absorption of the graphene has great structural tolerance, and as long as the structural symmetry is in a break state, even if structural parameters are changed greatly, the single-layer graphene can still obtain high light absorption efficiency at the excitation wavelength corresponding to the symmetrical protection mode;
according to the wave-absorbing device, the angle tolerance of the wave-absorbing device based on the symmetrical broken graphene is obviously improved by adopting full-cone incidence, and compared with the traditional incidence, the angle tolerance of the light absorption efficiency of the peak wavelength and the light absorption efficiency of the central wavelength of the wave-absorbing device are greatly improved after the full-cone incidence is adopted;
according to the refractive index sensing method based on the symmetrical broken graphene wave absorbing device, the high-sensitivity refractive index sensing application can be realized by means of the reflection spectrum of the wave absorbing device, and the method has a good application prospect in the fields of photoelectric detection, photo-thermal conversion, photoelectric imaging, optical filtering, fluorescence spectrum, biological sensing and the like.
Drawings
Fig. 1 is a schematic structural diagram of a graphene efficient light absorption device based on structural symmetry breaking according to the present invention; wherein, 1 is a substrate, 2 is a grating, 3 is an absorption material, and 4 is a groove;
fig. 2 shows the reflection, transmission and absorption spectra of the structure in example 1 of the present invention under symmetrical (s ═ 0) and broken (s ═ 10nm) conditions, with the structural parameters: p 690nm, d1＝438nm，d2249nm, and w 345 nm; TM polarized light (magnetic field in y-direction) is incident perpendicularly to the grating surface. (a) s is 0; (b) s-10 nm.
Fig. 3 is a spectrum of a structure with (without) graphene in an embodiment of example 1 of the present invention, and other parameters are the same as those in fig. 2. (a) When no graphene is present in the structure, the reflectance spectra of the symmetric structure (s ═ 0) and the symmetric disrupted structure (s ═ 10 nm); (b) when no graphene is present in the structure, the transmission spectra of the symmetric structure (s ═ 0) and the symmetric disrupted structure (s ═ 10nm) are transmitted in exponential coordinates; (c) absorption spectrum (exponential transmission spectrum) when s is 10nm, with or without graphene in the structure.
Fig. 4 shows the magnetic field distributions corresponding to the leakage mode and the symmetric protection mode when the structure is free of graphene and is in a symmetric defect state (s ═ 10nm) in an embodiment 1 of the present invention, and other parameters are the same as those in fig. 2. (a) Magnetic field distribution of the leaky mode 1; (b) the magnetic field distribution of the leaky mode 2; (c) the magnetic field distribution of the symmetrical protective mold 1; (d) the magnetic field distribution of the symmetrical protective mold 2.
Fig. 5 shows an absorption spectrum corresponding to the structure in an embodiment of example 1 of the present invention, and other parameters are the same as those in fig. 2. (a) Absorption spectra with different narrow groove widths; (b) and the narrow groove width s is 74 nm.
FIG. 6 shows an embodiment 2 of the present inventionThe absorption spectrum is influenced by the variation of the structural parameters in the manner in which the narrow groove width s is 74nm, and the other parameters are the same as in fig. 2. (a) Moving the positions of different narrow notches by delta s to obtain corresponding absorption spectra; (b) absorption spectra corresponding to different grating periods p; (c) different grating layer thicknesses d1A corresponding absorption spectrum; (d) thickness d of different film layers2The corresponding absorption spectrum.
Fig. 7 shows absorption spectra corresponding to different incident angles in an embodiment of example 3 of the present invention, in which the narrow groove width s is 74nm, and other parameters are the same as those in fig. 2. (a) Different incident angles theta under the traditional incident condition (the incident plane is an xz plane)xzA corresponding absorption spectrum; (b) different incidence angles theta under the full-taper incidence condition (the incidence plane is yz plane)yzA corresponding absorption spectrum; (c) conventional incident (theta)xz) Condition and full cone incident (θ)yz) Under the condition, the absorption peak has an angular absorption spectrum corresponding to a central wavelength of 1.55 μm.
Fig. 8 is a view of refractive index sensing implemented based on a wave absorbing device in embodiment 4 of the present invention, where the width s of a narrow groove is 74nm, and other parameters are the same as those in fig. 2. (a) Different background refractive index ncA corresponding reflectance spectrum; (b) absorption peak (reflection valley) position against background refractive index ncAnd linear fitting thereof.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1: device for realizing high-efficiency light absorption of graphene based on structural symmetry break
The device for realizing high-efficiency light absorption of graphene based on structural symmetry break-up is shown in fig. 1. The single-layer graphene is arranged between a quartz substrate and a silicon grating (comprising a silicon grating layer and a silicon film layer), and the thicknesses of the silicon grating layer and the silicon film layer are d respectively1And d2The grating width is w, the grating period is p, and the symmetry of the grating structure about the yz plane is destroyed because a narrow groove with the width s exists in the silicon film layer between grating grids.
The corresponding preparation process is as follows:
(1) preparing single-layer graphene on a quartz substrate, wherein the single-layer graphene can be directly deposited on the quartz substrate by a Chemical Vapor Deposition (CVD) method; or the single-layer graphene is prepared by using a copper foil as a matrix by adopting a CVD method, and then is transferred to a quartz substrate by a wet method.
(2) Depositing a silicon film on a quartz substrate containing graphene, depositing a silicon material on the quartz substrate with the surface covered with the graphene by adopting modes of electron beam evaporation coating, magnetron sputtering coating or plasma chemical vapor deposition and the like, and obtaining the silicon film with the thickness of about 690nm by controlling the film deposition rate and the deposition time.
(3) Preparing a photoresist with a certain thickness on a silicon film, selecting a conventional spin coating device, spin-coating the photoresist on the silicon film in a dark room by adopting a spin coating mode, wherein the photoresist can be a positive photoresist or a negative photoresist, and controlling the thickness of the photoresist film by adjusting the rotation speed of the spin coating device to obtain the photoresist film with a certain thickness.
(4) Exposing the photoresist, preparing a microstructure pattern on the photoresist film by using a mask plate in a conventional ultraviolet exposure or electron beam direct writing mode, developing, fixing, baking, and performing reactive ion beam etching to obtain a pattern with a period of p and a depth of an upper layer and a lower layer of d1And d2The silicon grating of (1). Considering that the silicon grating with the broken structural symmetry in this embodiment has two notches with different depths (the depths are d respectively)1And d1+d2) Double notches can be manufactured in the silicon material in a two-time etching mode, and then the wave absorbing device is manufactured.
The ideal wave-absorbing device structure has the following specific parameters: p 690nm, d1＝438nm，d2249nm, w 345nm, and s 74 nm. Wherein d is1And d2The thickness of the silicon grating layer and the thickness of the silicon film layer are respectively, the grating width is w, the grating period is p, and s is the width of a narrow groove in the silicon film layer.
In the present embodiment, the designed wavelength band is the optical communication wavelength band (1300nm-1650nm), in which the refractive index of the silicon material is 3.48 and the refractive index of the quartz substrate is1.47, the optical constant of the single-layer graphene is calculated by a Kubo formula, and the dielectric constant of the single-layer graphene is epsilong＝1+jσg/ωε0tgIn which epsilon0Is the vacuum dielectric constant, ω is the incident light circular frequency, tg0.34nm is the thickness, σ, of the monolayer graphenegIs the conductivity of graphene, which is the in-band conductivity σ of grapheneintraAnd interband conductivity σinterThe sum, can be written as:
in the formula (I), the compound is shown in the specification,
and e is respectively the reduced Planck constant and the unit charge quantity, mucIs chemical potential, kBBoltzmann constant, T is temperature, τ is momentum relaxation time, and Γ is 1/2 τ is scattering ratio. The corresponding parameter is muc＝0.15eV，T＝300K，τ＝0.5ps。
When TM polarized light (magnetic field along y direction) vertically enters grating surface, symmetry protection mode is excited due to structural symmetry break, so that incident light field generates high local area and enhancement at excitation wavelength of the symmetry protection mode, and further high-efficiency absorption of incident light by single-layer graphene is promoted. The corresponding absorption performance and optical field distribution can be analyzed and calculated by methods such as RCWA and FDTD. Due to the adoption of the sub-wavelength grating structure (p)<λ0) And the light absorption efficiency of the wave absorbing device can be simplified to be A-1-R-T, wherein R and T are respectively the reflectivity and the transmissivity of the structure.
Fig. 2 shows the reflection, transmission and absorption spectra of the structure in this example for the case of symmetry (s ═ 0) and absence (s ═ 10 nm). It can be seen that when the silicon grating is in a symmetric structure, that is, when the grating profile is symmetric about the yz plane, the light absorption of the graphene in the structure is small as a whole because the intrinsic light absorption of the single-layer graphene with a thickness of only 0.34nm is low. However, when the symmetry of the structure is broken, that is, after a narrow notch with a width s of 10nm is introduced into the silicon thin film layer, the reflection spectrum of the structure generates two pits, and two sharp resonance absorption peaks are generated at corresponding wavelength positions. Clearly, the lack of symmetry of the structure contributes to the enhanced light absorption of single-layer graphene.
Fig. 3 shows the spectrum of the structure with (without) graphene in this example, and other parameters are the same as those in fig. 2, so as to study the relationship between the structural symmetry loss and the graphene light absorption enhancement. As can be seen from fig. 3(a), when there is no graphene in the grating structure, although the symmetry of the grating structure is slightly broken (s ═ 10nm), the reflection spectrum of the asymmetric grating will produce two significant resonance abrupt changes relative to the symmetric structure grating (s ═ 0). Fig. 3(b) shows the transmission spectra of the symmetric structure (s is 0) and the symmetric structure (s is 10nm), and the transmission spectra are expressed by using an exponential coordinate, so that the corresponding resonance modes can be more intuitively seen. As can be seen from fig. 3(b), when the grating structure is subjected to symmetry loss (s ═ 10nm), compared with the spectrum of the symmetric structure (s ═ 0), in addition to the existence of the intrinsic leaky modes (leaky mode 1 and leaky mode 2), symmetrical guard modes (symmetrical guard mode 1 and symmetrical guard mode 2) due to the structural symmetry loss are generated. As can be seen from fig. 3(c), for the symmetrically broken silicon grating (s ═ 10nm), the single layer graphene produces a significant optical absorption enhancement at the excitation wavelength of the symmetric protective mode, with the absorption peak position coinciding with the excitation wavelength position of the symmetric protective mode.
Fig. 4 shows the magnetic field distribution corresponding to the leaky mode and the symmetric guard mode without graphene in the structure and in a symmetric defect situation (s ═ 10nm), to explain why the symmetric guard mode can significantly improve the light absorption efficiency of graphene. As can be seen from fig. 4, for the leaky mode, although the optical field also generates a local effect (i.e. the optical field is bound by the grating structure), its enhancement effect is insignificant, and the normalized amplitudes of leaky mode 1 and leaky mode 2 are 6.17 and 6.51, respectively. While for the symmetric guard mode, the optical field can not only be highly localized in the grating structure, but also produce significant enhancement effect, the normalized amplitudes of symmetric guard mode 1 and symmetric guard mode 2 are as high as 424.58 and 301.89, respectively. Because the symmetrical protective film can enable an incident light field to be highly localized and remarkably enhanced in the structure, when single-layer graphene is added into the structure, the light field localization and enhancement effects of the symmetrical protective film are remarkable, and the light absorption efficiency of the graphene can be effectively improved.
Fig. 5 shows an absorption spectrum of the structure of the present embodiment, and other parameters are the same as those in fig. 2. As can be seen from fig. 5(a), the variation of the narrow groove width w significantly changes the light absorption efficiency of graphene. Because the change of the width of the narrow groove will affect the symmetry of the grating structure and further affect the excitation of the symmetrical protective film in the structure, the high-efficiency light absorption of the graphene can be realized at different wavelength positions by adjusting and optimizing the width of the groove. Fig. 5(b) shows an absorption spectrum corresponding to a structure in which the groove width s is 74nm, and it can be seen that, at this groove depth, the graphene achieves a significant optical absorption enhancement around a wavelength of 1.55 μm, and the peak absorption efficiency is as high as 97.8%.
Example 2: graphene enhanced light absorption method for realizing high preparation tolerance based on symmetry break
The light absorption enhancement of the graphene is caused by the symmetry break of the structure, so long as the symmetry break exists in the structure, a symmetrical protection mode can be generated, and at the position of the excitation wavelength of the symmetrical protection mode, the corresponding light field is highly localized and enhanced in the structure, so that the single-layer graphene can keep higher light absorption efficiency. Therefore, even if the structural parameters are greatly changed, the light absorption enhancement effect is still significant. Fig. 6 shows the effect of the variation of the structural parameters on the absorption spectrum in the present embodiment, where the narrow groove width s is 74nm, and other parameters are the same as those in fig. 2. As can be seen from fig. 6(a), when the narrow groove moves significantly in the film layer, although the change Δ s in the narrow groove position can significantly change the excitation position of the symmetric protective film, resulting in the movement of the absorption peak position with the change Δ s, the graphene in the structure still has high light absorption efficiency, and when Δ s ═ isThe light absorption efficiency of single-layer graphene at 80nm is still about 60%. Further, as can be seen from FIGS. 6(b) to (d), also, even when the grating period p, the grating layer thickness d1And a film layer thickness d2Significantly changed, p, d in this example1And d2All change by 40nm, and the single-layer graphene still has high light absorption efficiency in the structure. Therefore, the method for realizing graphene light absorption enhancement based on symmetry breaking has high experimental preparation tolerance and presents the characteristic of insensitivity to structural parameter variation, so that the method has high practical value.
Example 3: graphene enhanced light absorption method for realizing large-angle tolerance based on symmetry break
Since the tangential wave vector of incident light (x direction in the present embodiment) can be expressed as k under the conventional incident condition (the incident plane is xz plane in the present embodiment)x＝k0sin θ, where k0＝2π/λ0Is the vacuum wave vector (lambda)0Wavelength of incident light), θ is the angle of incidence, and thus the angle of incidence θxzWill change the wave vector of the incident light in the x-direction and thus influence the phase matching condition of the grating, i.e. kxAnd grating reciprocal lattice vector (in this embodiment, the grating reciprocal lattice vector is in the x direction, and has a size of 2 pi m/p, where m is the diffraction order and p is the grating period) and grating higher order diffraction wavevector (k)x,m) Wave vector matching (i.e. k)x,m＝kx+2 π m/p). Therefore, under the traditional incident condition, the change of the incident angle changes the phase matching condition of the grating, and further influences the excitation of the symmetrical protective film, so that the light absorption efficiency of the graphene is sensitive to the change of the incident angle, the incident light can realize high absorption efficiency only when the incident light is close to the normal incident condition, and the practical application of the wave absorbing device is greatly restricted. However, the full cone angle of incidence (in this embodiment, the incident plane is the yz plane), that is, the incident plane is changed from the conventional xz plane to the yz plane, and since the incident angle changes in the yz plane at this time, the incident angle θyzHas little influence on the wave vector k of the incident light in the x directionxTherefore, under the condition of full-cone incidence, the change of the incidence angle has little influence on the phase matching condition of the grating, and can effectively improveAngular tolerance of graphene light absorption enhancement.
Fig. 7 shows absorption spectra corresponding to different incident angles in the present embodiment, in which the narrow groove width s is 74nm, and other parameters are the same as those in fig. 2. As can be seen from fig. 7(a), under the conventional incident condition (in the present embodiment, the incident plane is an xz plane), the light absorption efficiency of graphene versus the incident angle θxzVery sensitive, angle of incidence θxzNot only does the change in absorption peak position significantly change, but it also causes a significant decrease in peak absorption efficiency. When the incident angle thetaxzWhen the temperature is +/-4 ℃, the light absorption efficiency of the graphene is less than 40%. It should be noted that, in the present embodiment, the grating has a broken structural symmetry about its symmetry plane (yz plane), which results in positive and negative incidence angles θxzThe corresponding absorption spectra are slightly different. FIG. 7(b) shows different incident angles θ under the full-cone incident condition (the incident plane is yz plane)yzThe corresponding absorption spectrum. As can be seen from fig. 7(b), under the full-taper incidence condition, the angular tolerance of the peak light absorption efficiency of graphene is greatly improved, even when the incidence angle θ is largeyzThe peak light absorption efficiency is still as high as 47% at ± 20 °. Therefore, compared with the traditional incidence, the full-cone incidence is adopted, and the light absorption efficiency angle tolerance of the peak wavelength of the wave absorbing device is improved by more than 5.0 times. Incidentally, under the full-cone incident condition, the incident angle θ is due to the present embodimentyzVarying in the plane of symmetry of the structure (yz plane), thetayzThe change of (A) does not influence the symmetry of the structure, and the positive and negative incidence angles thetayzThe corresponding absorption spectra are identical. FIG. 7(c) is a conventional incidence (θ)xz) Condition and full cone incident (θ)yz) Under the condition, the absorption peak has an angular absorption spectrum corresponding to a central wavelength of 1.55 μm. It can be seen that under the conventional incident condition, the angular absorption bandwidth of the graphene is only 5.1 °, and with the full-cone incidence, the corresponding absorption bandwidth is increased to 14.9 °, and the angular absorption bandwidth is increased by 2.92 times compared with the conventional incident condition. It can be seen that the angle tolerance of the wave absorbing device can be significantly improved by using full cone incidence, i.e. even when the incident light deviates significantly from normal incidence, the wave absorbing device has a narrow light absorption bandwidth and is only used for full cone incidenceThe layer graphene can still maintain high efficiency of light absorption.
Example 4: method for realizing high-sensitivity sensing based on symmetrical broken graphene light absorption enhancement
The graphene optical absorption enhancement based on the symmetrical protective mode has a narrow absorption bandwidth and high absorption efficiency, and the peak position is sensitive to the tiny change of the background refractive index, so that the graphene optical absorption enhancement based on the symmetrical protective mode can be used as a high-sensitivity refractive index sensing device. Fig. 8 is a view of refractive index sensing implemented based on a wave absorbing device in this embodiment, where the width s of the narrow groove is 74nm, and other parameters are the same as those in fig. 2. As can be seen from FIG. 8(a), even the background refractive index ncAnd the position of a reflection valley of a reflection spectrum corresponding to the structure is obviously moved due to a high-efficiency light absorption effect caused by the symmetrical protective mode. By measuring the reflection spectrum of the wave absorbing device and by linear fitting of the reflection peak position with the change of the background refractive index (the slope of the reflection spectrum is the sensitivity of the refractive index sensing), the obtained sensitivity (S) and quality factor (FoM) of the refractive index sensing are respectively S-604 nm/RIU and FoM-151, which shows that the wave absorbing device in the embodiment has excellent refractive index sensing performance. Here, the refractive index sensing sensitivity is defined as S ═ Δ λpeak/ΔncWherein Δ λpeakChange of background refractive index Δ ncChange in the position of the time reflection valley (absorption peak); the quality factor of the sensor is defined as FoM ═ S/Δ λ, where Δ λ is the full width at half maximum of the reflection spectrum.
The scope of the present invention is not limited to the above embodiments, and any modifications, equivalent substitutions, improvements, etc. that can be made by those skilled in the art within the spirit and principle of the inventive concept should be included in the scope of the present invention.
Claims (10)
1. Efficient light absorption device based on structural symmetry is scarce, its characterized in that, including basement (1), grating (2) and absorbing material (3), grating (2) are including grating layer and rete, and the grating layer is located the rete, and absorbing material (3) are located between rete and basement (1), have grooving (4) on the rete between the grid and make grating (2) symmetry lack.
2. The high efficiency light absorbing device based on structural symmetry breaking according to claim 1, characterized in that the substrate (1) is a quartz substrate.
3. The efficient light absorption device based on structural symmetry breaking as claimed in claim 1, wherein the material of the grating (2) is a high refractive index thin film material.
4. A high efficiency light absorbing device based on a structural symmetry breaking as claimed in claim 3 wherein the high refractive index thin film material is silicon, gallium arsenide, titanium dioxide, zinc sulfide or zinc selenide.
5. The efficient light absorbing device based on structural symmetry breaking of claim 1, wherein the grating (2) is a one-dimensional, square, L-shaped, T-shaped, cross, ring or cylindrical grating.
6. The efficient light absorbing device based on structural symmetry breaking of claim 1, characterized in that the absorbing material (3) is graphene or a two-dimensional transition metal sulfide.
7. The efficient light absorbing device based on structural symmetry breaking of claim 1, wherein the graphene is a single layer graphene.
8. A method for improving the light absorption-angle tolerance of graphene, which is characterized in that the device of any one of claims 1 to 6 is used as a light absorption device, and the incidence mode adopts full-cone incidence.
9. A preparation method of a high-efficiency light absorption device based on structural symmetry deficiency is characterized by comprising the following steps:
(1) preparing single-layer graphene on a quartz substrate;
(2) depositing a silicon thin film on a quartz substrate having single-layer graphene;
(3) preparing a photoresist film with a certain thickness on the silicon film;
(4) exposing the photoresist, preparing a microstructure pattern on the photoresist film by using a mask, developing, fixing and baking, and preparing a silicon grating with a certain period and an upper-layer structure and a lower-layer structure by reactive ion beam etching;
(5) and etching twice to make notches in the lower layer structure of the silicon grating.
10. Use of the device of any of claims 1-6 for photodetection, photothermal conversion, optical sensing, fluorescence spectroscopy, optical filtering, or higher harmonic excitation.
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| CN117405604B (en) * | 2023-10-30 | 2024-03-29 | 河北工程大学 | Graphene biosensor based on double-layer sub-wavelength grating |
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