CN112242350A - Al for copper interconnection line2O3ZrN double-layer diffusion barrier layer and preparation method thereof - Google Patents

Al for copper interconnection line2O3ZrN double-layer diffusion barrier layer and preparation method thereof Download PDF

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CN112242350A
CN112242350A CN202011122601.1A CN202011122601A CN112242350A CN 112242350 A CN112242350 A CN 112242350A CN 202011122601 A CN202011122601 A CN 202011122601A CN 112242350 A CN112242350 A CN 112242350A
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layer
zrn
barrier layer
double
preparation
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孟瑜
宋忠孝
李龙
畅庚榕
王小艳
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XI'AN JIAOTONG UNIVERSITY SUZHOU ACADEMY
Xian Unversity of Arts and Science
Xian University
Suzhou Academy of Xian Jiaotong University
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XI'AN JIAOTONG UNIVERSITY SUZHOU ACADEMY
Xian Unversity of Arts and Science
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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Abstract

The invention discloses Al for a copper interconnection line2O3The method comprises depositing cleaning impurity-removing pretreatment on the cleaned and impurity-removed pretreated substrate, and then depositing on Al2O3Depositing a ZrN barrier layer on the surface of the transition layer to form a double-layer structure, and preparing an ultrathin Al layer between the ZrN barrier layer and the silicon substrate2O3The transition layer can effectively improve the diffusion barrier property of the ZrN barrier layer material, is also beneficial to reducing the increase of the copper wiring resistance caused by the size effect, and utilizes deposited Al2O3The amorphous structure of the transition layer can obviously improve the interface combination of the ZrN barrier layer and the silicon substrate, and the Al with the amorphous structure2O3ZrN bilayer barrier layerHas higher thermal stability and improves the barrier property of resisting Cu atom diffusion.

Description

Al for copper interconnection line2O3ZrN double-layer diffusion barrier layer and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor integrated circuit manufacturing processes, and particularly relates to Al for copper interconnection lines2O3a/ZrN double-layer diffusion impervious layer and a preparation method thereof.
Background
At present, Ta/TaN double-layer barrier layers are mainly adopted for copper interconnection of integrated circuits, wherein TaN is used as the barrier layer, and Ta is used as an adhesion layer, so that the copper interconnection of the integrated circuits has higher thermal stability and good barrier property. However, the coverage uniformity of Ta deposition is not good, which easily causes the blockage of the wire trench, the back end causes copper electroplating difficulty, holes are easily generated, and the circuit performance is seriously affected. In addition, the unevenness of Ta easily causes that most of the groove filling material is Ta rather than Cu, and the resistance value of the Ta metal wire is greatly increased, so that the benefit brought by the Cu wire is offset. As the feature size of integrated circuits is reduced, Ta/TaN bilayer barrier layers have not been able to meet the requirements of interconnect processes. Therefore, it is of great significance to develop a new barrier layer material with lower resistivity, better thermal stability and thinner thickness to improve the reliability of the integrated circuit.
Amorphous ZrN has good thermal stability, lower resistivity than TaN and TiN films, and standard heat of formation at 298K of-87.3 kcal/mal, and is widely used as a diffusion barrier layer of copper interconnect lines. However, the binary nitride is easily recrystallized at a medium temperature (about 600 ℃), promotes diffusion of Cu atoms, and in addition, ZrN is poorly bonded to a silicon substrate and is easily exfoliated at a high temperature, which limits the application of ZrN in a copper interconnection process.
Disclosure of Invention
The invention aims to provide Al for copper interconnection wires2O3A/ZrN double-layer diffusion impervious layer and a preparation method thereof are used for overcoming the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
al for copper interconnection line2O3The preparation method of the/ZrN double-layer diffusion barrier layer comprises the following steps:
step 1), cleaning and impurity removing pretreatment is carried out on a substrate;
step 2), preparing a layer of Al on the surface of the substrate after cleaning and impurity removal pretreatment2O3A transition layer;
step 3) utilizing a reactive magnetron sputtering method to perform reaction on Al2O3And depositing a ZrN barrier layer on the surface of the transition layer.
Further, specifically, the substrate is sequentially placed in acetone and ethanol for ultrasonic cleaning, and then is soaked in an HF solution to remove an oxide layer on the surface of the substrate.
Further, the concentration of the acetone solution is more than 99.9 percent; the concentration of the ethanol solution is more than 99.9 percent.
Further, preparing Al on the surface of the substrate by adopting an atomic layer deposition method, a magnetron sputtering method or chemical vapor deposition2O3And a transition layer.
Further, when the atomic layer deposition method is adopted, trimethylaluminum and water are used as precursors, the deposition temperature is 250 ℃, and the deposition time is 300-1600 s.
Further, preparing a deposition ZrN barrier layer in a vacuum inert gas atmosphere.
Further, Ne gas or Ar gas is used as the inert gas.
Further, use of N2The gas flow is 20-30 sccm, and the working pressure is 0.5-1 Pa.
Al for copper interconnection line2O3a/ZrN bilayer diffusion barrier comprising a substrate and Al deposited on the substrate2O3Transition layer of Al2O3And a ZrN barrier layer is deposited on the surface of the transition layer.
Further, said Al2O3The thickness of the transition layer is 1-10nm, and the thickness of the ZrN barrier layer is 5-15 nm.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention relates to Al for copper interconnection wire2O3The preparation method of the/ZrN double-layer diffusion barrier layer comprises the steps of depositing cleaning impurity removal pretreatment on a substrate after cleaning impurity removal pretreatment, and then depositing the cleaning impurity removal pretreatment on Al2O3Depositing a ZrN barrier layer on the surface of the transition layer to form a double-layer structure, and preparing an ultrathin Al layer between the ZrN barrier layer and the silicon substrate2O3The transition layer can effectively improve the diffusion barrier property of the ZrN barrier layer material, is also beneficial to reducing the increase of the copper wiring resistance caused by the size effect, and utilizes deposited Al2O3The amorphous structure of the transition layer can obviously improve the interface combination of the ZrN barrier layer and the silicon substrate, and the Al with the amorphous structure2O3the/ZrN double-layer barrier layer has high thermal stability, and the barrier performance of Cu atom diffusion resistance is improved.
Furthermore, by adopting an atomic layer deposition technology, the method can deposit an ultrathin, compact and uniform film with excellent performance, has good step coverage, and can control the thickness of the film in a nanoscale.
The invention relates to Al for copper interconnection wire2O3a/ZrN bilayer diffusion barrier, using a substrate and Al deposited on the substrate2O3Transition layer of Al2O3A ZrN barrier layer is deposited on the surface of the transition layer to form a barrier structure for preventing the diffusion of the copper interconnection line, and Al2O3The transition layer, the substrate and the barrier layer are well combined, and the Al with an amorphous structure2O3the/ZrN double-layer barrier layer has high thermal stability, and the barrier performance of Cu atom diffusion resistance is improved, so that the service life of the integrated circuit is prolonged.
Drawings
FIG. 1 shows Al in the examples of the present invention2O3HRTEM image of transition layer thickness of 5 nm.
FIG. 2 shows Al of different thicknesses in the examples of the present invention2O3Barrier diffusion barrier properties of (a).
FIG. 3 is a schematic diagram of a copper interconnect structure in an embodiment of the invention.
In the figure, 1, a substrate; 2. al (Al)2O3A transition layer; 3. a ZrN barrier layer; 4. copper interconnect lines.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
al for copper interconnection line2O3The preparation method of the/ZrN double-layer diffusion barrier layer comprises the following steps:
step 1), cleaning and pretreating a substrate; specifically, a substrate is sequentially placed in acetone and ethanol for ultrasonic cleaning, and then an oxide layer on the surface of the substrate is removed by soaking in an HF solution so as to remove organic pollutants on the surface of a silicon wafer and improve the film-substrate binding force; wherein the concentration of the acetone solution is more than 99.9%; the concentration of the ethanol solution is more than 99.9 percent, and finally 5 percent HF solution is used for removing the oxide layer on the surface.
Step 2), preparing a layer of Al on the surface of the substrate after cleaning pretreatment2O3A transition layer;
specifically, Al is prepared and formed on the surface of the substrate by adopting an atomic layer deposition method, a magnetron sputtering method or chemical vapor deposition2O3A transition layer; when the atomic layer deposition method is adopted, trimethylaluminum and water are used as precursors, the deposition temperature is 240-260 ℃, and the deposition time is 300-1600 s.
Step 3) adopting a reactive magnetron sputtering method to perform reaction on Al2O3Depositing a ZrN barrier layer on the surface of the transition layer to form Al on the surface of the substrate2O3a/ZrN bilayer diffusion barrier. And depositing a copper interconnection line on the ZrN barrier layer to form a copper interconnection structure, as shown in figure 3.
And preparing the deposition ZrN barrier layer in the vacuum inert gas atmosphere. The substrate is a silicon substrate or a silicon substrate with a silicon dioxide layer.
The background vacuum degree of a sputtering chamber for magnetron sputtering is 3.0 multiplied by 10-4～7.5×10-4Pa; the Zr target material adopts direct current magnetron sputtering. The method is implemented at normal temperature by adopting double-chamber magnetron sputtering coating equipment; the purity of the Zr target material is 99.99 percent; the ZrN diffusion impervious layer obtained by the preparation method is of an amorphous structure.
Ne gas or Ar gas is used as inert gas;the reaction gas is N2The gas flow is 20-30 sccm, and the working pressure is 0.5-1 Pa.
From the above-mentioned Al2O3Al prepared by preparation method of/ZrN double-layer diffusion barrier layer2O3In a/ZrN bilayer diffusion barrier, Al2O3The thickness of the transition layer is 1-10nm, and the thickness of the ZrN barrier layer is 5-15 nm.
An Al2O3/ZrN double-layer diffusion barrier layer for a copper interconnection line, wherein the double-layer diffusion barrier layer comprises Al2O3Transition layer of said Al2O3And a ZrN barrier layer is arranged on the surface of the transition layer.
The Al is2O3The thickness of the transition layer is 1-10 nm. The thickness of the ZrN barrier layer is 5-15 nm.
The Al is2O3The transition layer is prepared by an atomic layer deposition technology, a magnetron sputtering method or a chemical vapor deposition technology.
The ZrN barrier layer is formed on Al by adopting a reactive magnetron sputtering method2O3The surface of the transition layer is deposited.
Deposition of Al using horizontal flow hot wall ALD system2O3A transition layer, wherein the reaction precursor is trimethyl aluminum and water, the deposition temperature is 250 ℃, the growth rate is 0.1nm/cycle, the deposition time is 5min, and finally 1nm Al is prepared2O3A transition layer; sputtering ZrN barrier layer by using JPG-450a type double-chamber magnetron sputtering equipment, wherein the target material is Zr target, and introducing argon with the purity of 99.99%, Ar and N2The gas flow is respectively 20sccm and 10sccm, the sputtering power of the Zr target is 40W, the bias voltage is 150V, the working gas pressure is 0.5Pa, and the sputtering time is 10min, so as to obtain a diffusion barrier layer with the thickness of 5nm, as shown in FIG. 1;
al prepared for the above examples2O3Transition layer, microstructure of thin film observed by TEM, 5nm of Al as seen in FIG. 12O3The film has an amorphous structure, and has a clear interface with the silicon substrate and good combination. FIG. 2 shows different thicknesses of Al2O3Barrier diffusion barrier ofThe blocking performance is improved along with the increase of the thickness of the transition layer after the sample is annealed at 600 ℃, and when Al is used2O3The diffusion of Cu atoms can be effectively prevented when the thickness is 5 nm. The invention adopts a double-layer structure, can effectively improve the diffusion barrier property of the ZrN barrier layer material, is also beneficial to reducing the increase of copper wiring resistance caused by size effect, adopts the atomic layer deposition technology, can deposit an ultrathin, compact and uniform film with excellent performance, simultaneously has the advantages of good step coverage and capability of controlling the thickness of the film in a nanometer scale, and utilizes the ultrathin Al prepared by the atomic layer deposition technology2O3The transition layer has an amorphous structure, so that the interface combination of the ZrN barrier layer and the silicon substrate can be obviously improved, the thermal stability of the barrier layer is improved, and the diffusion barrier property is improved.

Claims (10)

1. Al for copper interconnection line2O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized by comprising the following steps:
step 1), cleaning and impurity removing pretreatment is carried out on a substrate;
step 2), preparing a layer of Al on the surface of the substrate after cleaning and impurity removal pretreatment2O3A transition layer;
step 3) utilizing a reactive magnetron sputtering method to perform reaction on Al2O3And depositing a ZrN barrier layer on the surface of the transition layer.
2. Al for copper interconnect line according to claim 12O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized by comprising the following steps of sequentially placing a substrate in acetone and ethanol for ultrasonic cleaning, and then soaking in HF solution to remove an oxide layer on the surface of the substrate.
3. Al for copper interconnect line according to claim 22O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized in that the concentration of an acetone solution is more than 99.9 percent; the concentration of the ethanol solution is more than 99.9 percent.
4. Al for copper interconnect line according to claim 12O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized in that Al is prepared and formed on the surface of a substrate by adopting an atomic layer deposition method, a magnetron sputtering method or chemical vapor deposition2O3And a transition layer.
5. Al for copper interconnect according to claim 42O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized in that when an atomic layer deposition method is adopted, trimethylaluminum and water are adopted as precursors, the deposition temperature is 240-260 ℃, and the deposition time is 300-1600 s.
6. Al for copper interconnect line according to claim 12O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized in that the ZrN barrier layer is prepared and deposited in a vacuum inert gas atmosphere.
7. Al for copper interconnect according to claim 62O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized in that Ne gas or Ar gas is adopted as inert gas.
8. Al for copper interconnect according to claim 72O3The preparation method of the/ZrN double-layer diffusion barrier layer is characterized in that N is adopted2The gas flow is 20-30 sccm, and the working pressure is 0.5-1 Pa.
9. Al for copper interconnect lines prepared by the method of claim 12O3the/ZrN double-layer diffusion impervious layer is characterized by comprising a substrate and Al deposited on the substrate2O3Transition layer of Al2O3And a ZrN barrier layer is deposited on the surface of the transition layer.
10. Al for copper interconnect line according to claim 92O3ZrN bilayer diffusionA barrier layer, characterized in that said Al2O3The thickness of the transition layer is 1-10nm, and the thickness of the ZrN barrier layer is 5-15 nm.
CN202011122601.1A 2020-10-19 2020-10-19 Al for copper interconnection line2O3ZrN double-layer diffusion barrier layer and preparation method thereof Pending CN112242350A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259839A (en) * 2004-03-10 2005-09-22 Nec Electronics Corp Method for manufacturing semiconductor device
CN101005059A (en) * 2007-01-19 2007-07-25 哈尔滨工程大学 Copper metallized barrier layer structure of integrated circuit or semiconductor device and its preparing method
CN102498542A (en) * 2009-09-04 2012-06-13 住友化学株式会社 Semiconductor substrate, field effect transistor, integrated circuit, and method for producing semiconductor substrate
CN105575828A (en) * 2014-10-16 2016-05-11 中芯国际集成电路制造(上海)有限公司 Manufacturing method of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259839A (en) * 2004-03-10 2005-09-22 Nec Electronics Corp Method for manufacturing semiconductor device
CN101005059A (en) * 2007-01-19 2007-07-25 哈尔滨工程大学 Copper metallized barrier layer structure of integrated circuit or semiconductor device and its preparing method
CN102498542A (en) * 2009-09-04 2012-06-13 住友化学株式会社 Semiconductor substrate, field effect transistor, integrated circuit, and method for producing semiconductor substrate
CN105575828A (en) * 2014-10-16 2016-05-11 中芯国际集成电路制造(上海)有限公司 Manufacturing method of semiconductor device

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