CN112234434A

CN112234434A - Microlens chip

Info

Publication number: CN112234434A
Application number: CN201910637841.6A
Authority: CN
Inventors: 方照诒
Original assignee: Pacific Liaocheng Photoelectric Technology Co ltd
Current assignee: Pacific Liaocheng Photoelectric Technology Co ltd
Priority date: 2019-07-15
Filing date: 2019-07-15
Publication date: 2021-01-15

Abstract

The invention relates to a microlens chip, mainly set up a lens layer above a VCSEL (surface emitting laser) component, the lens layer is an optical lens formed by an optical layer that directly covers and directly contacts on VCSEL component after structuring, therefore the light that is sent out from VCSEL component can be focused and collimated by the lens layer directly, so the lens layer can be real microminiaturized, make array near field light type and far field light type that a plurality of VCSEL components form can be adjusted through this microlens. And because the lens layer is directly covered on the VCSEL element, the VCSEL element and the lens layer are aligned during construction, thereby reducing the alignment difficulty and improving the optical coupling process efficiency of the optical communication module.

Description

Microlens chip

Technical Field

The present invention relates to a microlens chip, and more particularly, to a microlens chip in which a microlens is directly formed on a Surface Emitting Laser (VCSEL).

Background

As the name implies, a surface emitting laser (VCSEL) emits laser light perpendicularly from the surface of a crystal grain, and mainly uses an upper DBR (distributed Bragg reflector) layer and a lower DBR (DBR), which are also called distributed Bragg reflector layers, to form a laser resonant cavity; therefore, the surface emitting laser is different from the conventional edge emitting laser in that the complicated structure of the edge emitting laser requiring the splitting or dry etching method for manufacturing the laser mirror surface is omitted.

The VCSEL device is formed on a laser wafer substrate formed by Gallium Arsenide (GaAs) as a substrate by a Molecular Beam Epitaxy (MBE) method or a Metal Organic Chemical Vapor Deposition (MOCVD) method from the bottom to the top in sequence: a substrate composed of GaAs as base material, a first mirror Layer directly laminated on the substrate, an Active Layer directly laminated on the first mirror Layer, and a second mirror Layer directly laminated on the Active Layer. Take a surface emitting laser manufactured by the Wet Oxidation method (Wet Oxidation) as an example, the substrate is an N-type gallium arsenide (N + GaAs or N-GaAs) substrate, the first mirror layer is an N-type distributed Bragg reflector (N-DBR), and the second mirror layer is a P-type distributed Bragg reflector (P-DBR). The surface-emitting laser uses the second mirror layer and the first mirror layer located above and below the active layer as the reflective mirror surface, so as to generate a Resonant Cavity (Resonant Cavity) to emit laser light. Typically, the materials of the second mirror layer and the first mirror layer include a multi-layer structure of aluminum gallium arsenide (AlGaAs) with different aluminum mole percentages.

As also disclosed in chinese patent publication No. 101223469B, "injection molded microlens for optical interconnects," a distance exists between the VCSEL element and the microlens such that light emitted from the VCSEL element that exhibits divergence is collimated and directed into the optical fiber after being focused by the microlens. However, a disadvantage of such a design is that: 1. since there is a distance between the VCSEL device and the microlens, which increases the traveling distance of light before contacting the microlens, the light emitted from the VCSEL device exhibits a large outward divergence, and the microlens needs a large area to refocus and collimate the divergent light, so that the so-called microlens cannot be actually miniaturized; the microlens must form a convex flange which does not have the function of focusing the light to be collimated, so the flange of the microlens causes a waste of material; 3. the VCSEL device needs to be aligned with the microlens completely to achieve the focusing and collimating effects, it is difficult to align the VCSEL device with the microlens without other auxiliary means, and the use of marks or tools is not only cumbersome and difficult to align, but also the alignment efficiency is not high.

Disclosure of Invention

The present invention provides a microlens chip, which is mainly to dispose a lens layer above a VCSEL device (surface emitting laser device), wherein the lens layer is an optical lens formed by structuring an optical layer directly covering the VCSEL device, so that light emitted from the VCSEL device can be directly focused and collimated by the lens layer, and the lens layer can be actually miniaturized, so that an array near-field light type and a far-field light type formed by a plurality of VCSEL devices can be adjusted by the microlens. And because the lens layer is directly covered on the VCSEL element, the VCSEL element and the lens layer are aligned during construction, thereby reducing the alignment difficulty and improving the production efficiency of the optical coupling process of the optical communication module.

According to the above-mentioned objective of the present invention, a microlens chip is provided, comprising: a surface emitting laser device and a lens layer; the surface emitting laser device is characterized in that the lens layer directly covers the surface emitting laser device and is directly contacted with the surface emitting laser device.

According to the above technical features, the surface emitting laser device includes: the mirror comprises a substrate, a first mirror layer arranged above the substrate, an active layer arranged above the first mirror layer and a second mirror layer arranged above the active layer; the lens layer is arranged above the second mirror layer, and the lens layer directly covers the second mirror layer and is in direct contact with the second mirror layer.

According to the above technical features, the surface emitting laser device includes: the mirror comprises a substrate, a first mirror layer arranged above the substrate, an active layer arranged above the first mirror layer, a second mirror layer arranged above the active layer, and a metal contact layer arranged above the second mirror layer; the lens layer is arranged above the metal contact layer, and the lens layer directly covers the metal contact layer and is directly contacted with the metal contact layer.

According to the above technical features, the lens layer is an optical lens formed by structuring an optical layer.

According to the above technical feature, wherein the lens layer is a convex lens.

According to the above technical features, the refractive index of the lens layer is between 1.4 and 1.7.

According to the above technical features, the substrate is a gallium arsenide substrate, an aluminum indium gallium nitride substrate or an indium gallium arsenide phosphide substrate.

According to the above technical features, the lens layer is a semi-cylinder, a semi-sphere or a semi-ellipsoid.

According to the above technical feature, the lens layer is a photoresist lens formed by structuring a photoresist layer directly covering the second mirror layer.

According to the above technical features, the lens layer is a convex lens, the refractive index of the lens layer is between 1.4 and 1.7, the substrate is a gallium arsenide substrate, the lens layer is a hemisphere, and the lens layer is a photoresist lens formed by structuring a photoresist layer directly covering the second lens layer.

According to the above technical feature, wherein the lens layer includes a first lens layer directly covering the second lens layer and a second lens layer directly covering the first lens layer.

According to the above technical features, the first lens layer is a planar lens, and the second lens layer is a convex lens.

According to the above technical features, the first lens layer and the second lens layer may be made of the same material or different materials.

According to the technical characteristics, a molybdenum metal layer is arranged below the substrate, the substrate is also provided with an accommodating space, and a reflective metal layer is arranged in the accommodating space; an enhancement layer is arranged between the reflective metal layer and the first mirror layer and extends to a position between the reflective metal layer and the substrate; an adhesion layer is further disposed between the substrate and the molybdenum metal layer.

The invention can provide a manufacturing method of a micro-lens chip, which is suitable for manufacturing the micro-lens chip according to the technical characteristics, and the manufacturing method of the micro-lens chip sequentially comprises the following steps: a VCSEL wafer preparation step, a photolithography (photolithography) step, and a thermal reflow (reflow) step.

The present invention further provides a method for manufacturing a microlens chip, which is suitable for manufacturing the microlens chip according to the above technical features, the method for manufacturing the microlens chip sequentially comprises the following steps: a VCSEL chip preparation step, a first photolithography process step, a second photolithography process step, and a plasma process step.

The present invention further provides a method for manufacturing a microlens chip, which is suitable for manufacturing the microlens chip according to the above technical features, the method for manufacturing the microlens chip sequentially comprises the following steps: a VCSEL chip preparation step, a first lithography process step, a second lithography process step and a heat reflow step.

The present invention further provides a method for manufacturing a microlens chip, which is suitable for manufacturing the microlens chip according to the above technical features, the method for manufacturing the microlens chip sequentially comprising the following steps: a VCSEL chip preparation step, a first lithography process step, a second lithography process step, a plasma process step, and a heat reflow step.

The present invention further provides a method for manufacturing a microlens chip, which is suitable for manufacturing the microlens chip according to the above technical features, the method for manufacturing the microlens chip sequentially comprising the following steps: a VCSEL chip preparation step, a first lithography process step, a second lithography process step, a heat reflow step, and a plasma process step.

Drawings

FIG. 1 is a structural diagram of a first embodiment of a microlens chip of the present invention.

FIG. 2 is a structural diagram of a second embodiment of a microlens chip of the present invention.

FIG. 3 is a structural diagram of a third embodiment of a microlens chip of the present invention.

Fig. 4 is a cross-sectional view of a method of manufacturing a first embodiment of a microlens chip of the invention.

Fig. 5 is a cross-sectional view of another method of manufacturing the first embodiment of the microlens chip of the present invention.

Fig. 6 is a cross-sectional view of still another method of manufacturing the first embodiment of the microlens chip of the present invention.

Fig. 7 is a cross-sectional view of a method of manufacturing a second embodiment of a microlens chip of the invention.

Fig. 8 is a sectional view for explaining another manufacturing method of the second embodiment configuration.

FIG. 9 is a diagram showing a fourth embodiment of a microlens chip according to the present invention.

FIG. 10 is a diagram showing the structure of a fifth embodiment of a microlens chip of the present invention.

FIG. 11 is a diagram showing the structure of a microlens chip according to a sixth embodiment of the present invention.

Description of the figure numbers:

1 VCSEL element (surface emitting laser element)

10 base

11 enhancement layer

12 reflecting metal layer

13 accommodating space

20 first mirror layer

30 active layer

40 second mirror layer

50 molybdenum metal layer

51 adhesive layer

80 lens layer

80A negative photoresist

80A' positive photoresist

80B pattern layer

81 first lens layer

81A first photoresist

81B first pattern layer

82 second lens layer

82A second photoresist

82B second pattern layer

90 metal contact layer

M negative photoresist mask

M' positive photoresist mask.

Detailed Description

Referring to fig. 1, a microlens chip according to a first embodiment of the present invention mainly includes: a surface emitting laser element 1 and a lens layer 80; the lens layer 80 is directly covered on the surface emitting laser device 1 and directly contacts with the surface emitting laser device 1.

The surface emitting laser device 1 includes: a substrate 10, a first mirror Layer 20 disposed above the substrate 10, an Active Layer 30(Active Layer) disposed above the first mirror Layer 20, and a second mirror Layer 40 disposed above the Active Layer 30, wherein the substrate 10 is a Gallium Arsenide (GaAs) substrate composed of GaAs; in the present embodiment, the substrate 10, the first mirror layer 20, the active layer 30 and the second mirror layer 40 form a Vertical Cavity-Emitting Laser (VCSEL) device 1. The substrate 10 is an N-type GaAs (N + GaAs or N-GaAs) substrate, or the substrate 10 is an aluminum indium gallium nitride (AlInGaN) substrate, or the substrate 10 is an indium gallium arsenide phosphide (InGaAsP) substrate. The first mirror layer 20 is an N-type distributed Bragg reflector (N-DBR), and the second mirror layer 40 is a P-type distributed Bragg reflector (P-DBR). Of course, embodiments in which the first mirror layer 20 is a P-DBR and the second mirror layer 40 is an N-DBR are also possible. The microlens chip of the present invention is characterized in that the lens layer 80 is disposed above the second mirror layer 40, the lens layer 80 directly covers the second mirror layer 40 and directly contacts with the second mirror layer 40, the lens layer 80 is an optical lens formed by structuring an optical layer, and the refractive index of the lens layer 80 is between 1.4 and 1.7. Preferably, the lens layer 80 is a convex lens, and the lens layer 80 is a structure of a half cylinder, a half sphere or a half ellipsoid. In particular, the material of the optical layer may be a dielectric, and the dielectric may be structured by thermal crosslinking, photo-crosslinking, etching or photolithography. For example, the lens layer 80 may be a photoresist lens formed by structuring a photoresist layer directly overlying the second mirror layer 40, wherein the photoresist layer is made of photoresist (dielectric), and the structuring of the photoresist-type dielectric may be by thermal or photo-crosslinking. Of course, the dielectric may be a film dielectric formed by vacuum deposition, and the optical layer may be a film, so that the film may be structured by etching or photolithography.

Since the lens layer 80 directly covers the second mirror layer 40, there is no distance between the VCSEL device 1 and the lens layer 80, and the light emitted from the VCSEL device 1 exhibits a very small divergence, so that the light emitted from the VCSEL device 1 can be directly focused and collimated by the lens layer 80, and the lens layer 80 can be actually miniaturized, which also makes the array formed by a plurality of VCSEL devices 1 denser and saves more space. Moreover, the microlens chip of the present invention does not require a conventional bump structure, and thus does not cause waste of materials. Furthermore, since the lens layer 80 directly covers the second mirror layer 40, the VCSEL device 1 and the lens layer 80 are aligned during the fabrication process without other auxiliary means as in the prior art, thereby reducing the alignment difficulty and improving the production efficiency of the optical coupling process of the optical communication module.

Referring to fig. 2, the structure of the second embodiment of the microlens chip of the present invention is a derivative structure of the first embodiment, and therefore, the same points of the second embodiment as the first embodiment will not be described again. The lens layer 80 of the second embodiment comprises a first lens layer 81 directly overlying the second mirror layer 40 and a second lens layer 82 directly overlying the first lens layer 81. The first lens layer 81 is a planar lens, and the second lens layer 82 is a convex lens. The second embodiment can be applied to a microlens chip requiring the lens layer 80 to be thick, or can be applied to a microlens chip requiring the lens layer 80 to be large in curvature. Specifically, the first lens layer 81 and the second lens layer 82 may be made of the same material or different materials.

Referring to fig. 3, the structure of the third embodiment of the microlens chip of the present invention is a derivative structure of the first embodiment, and therefore, the same points of the third embodiment as the first embodiment will not be described again. A molybdenum (Mo) metal layer 50 is disposed under the substrate 10 of the third embodiment, the substrate 10 is further provided with a receiving space 13, and a reflective metal layer 12 is disposed inside the receiving space 13; an enhancement layer 11 is further disposed between the reflective metal layer 12 and the first mirror layer 30, the enhancement layer 11 extending between the reflective metal layer 12 and the substrate 10; an adhesive layer 51 is further disposed between the substrate 10 and the molybdenum metal layer 50. In order to enhance the bonding strength between the substrate 10 and the molybdenum metal layer 50, the adhesion layer 51 is disposed between the substrate 10 and the molybdenum metal layer 50, and the adhesion layer 51 can be germanium gold (GeAu), nickel (Ni), or gold (Au) as the material of the adhesion layer 51, that is, the adhesion layer 51 is a laminated body of a GeAu layer, a Ni layer, and an Au layer. The reflective metal layer 12 is used for reflecting the light from the active layer 30, so that the light is reflected upward again, thereby increasing the light extraction efficiency of the whole VCSEL device 1. The reflective metal layer 12 is an aluminum layer, a gold layer, a silver layer, a copper layer, an iron layer, a titanium layer, a nickel layer, or a chromium layer. The purpose of the enhancement layer 11 is to enhance the reflection of light from the active layer 30 by the reflective metal layer 12 and to enhance the conduction of heat from the substrate 10 to the reflective metal layer 12, and then from the reflective metal layer 12 to the adhesive layer 51, the molybdenum metal layer 50 and the external environment in sequence. The enhancement layer 11 is made of silicon dioxide (SiO)₂) Layer or silicon nitride (Si)₃N_x) Layer of which the Si is₃N_xThe layer can be selected from Si₃N₃Layer or Si₃N₄And (3) a layer.

Referring to fig. 4 and 5, two different manufacturing methods of the microlens chip with the structure of the first embodiment of the invention are shown in fig. 1, which sequentially include the following steps.

Preparing a VCSEL wafer: referring to fig. 4 (a) and fig. 5 (a), a surface emitting laser (VCSEL) device 1 composed of the substrate 10, the first mirror layer 20, the active layer 30 and the second mirror layer 40 as described above is prepared.

Photolithography (photolithography) process: referring to fig. 4 (b) and fig. 5 (b), a negative photoresist 80A or a positive photoresist 80A 'is spin-coated on the second mirror layer 40 of the VCSEL device 1, preferably, the negative photoresist 80A is SU-83005 negative photoresist of MicroChem corp, and the positive photoresist 80A' is AZ P4620 positive photoresist of AZ Electronic Materials. Then, referring to fig. 4 (c) and fig. 5 (c), the negative photoresist mask M or the positive photoresist mask M' is used to block the light source for exposure. Then, referring to fig. 4 (d) and fig. 5 (d), after the cleaning with the developer, a pattern layer 80B is formed on the second mirror layer 40.

Thermal reflow (thermal reflow) procedure: referring to fig. 4 (e) and fig. 5 (e), the VCSEL device 1 covered with the patterned layer 80B is heated and melted back at a temperature exceeding the glass transition temperature (Tg) of the patterned layer 80B, so that the patterned layer 80B is transformed into the lens layer 80 with curvature.

Referring to fig. 6, there is shown another method for manufacturing a microlens chip having the structure of the first embodiment of the invention in fig. 1, which includes the following steps in sequence.

Preparing a VCSEL wafer: referring to fig. 6 (a), a surface emitting laser (VCSEL) device 1 composed of the substrate 10, the first mirror layer 20, the active layer 30 and the second mirror layer 40 as described above is prepared.

A first lithography (photolithography) step: referring to fig. 6 (b), a first photoresist 81A is coated on the second mirror layer 40 of the VCSEL device 1 by spin coating, and the first photoresist 81A may be a negative photoresist or a positive photoresist, such as a negative photoresist. Referring to fig. 6 (c), a negative photoresist mask M is used to block the light source for exposure. Referring to fig. 6 (d), after being cleaned by the developer, a first pattern layer 81B is formed on the second mirror layer 40.

A second lithography (photolithography) step: referring to fig. 6 (e), a second photoresist 82A is coated on the first pattern layer 81B by spin coating, and the second photoresist 82A may be a negative photoresist or a positive photoresist, such as a negative photoresist. Referring to fig. 6 (f), a negative photoresist mask M is used to block the light source for exposure. Referring to fig. 6 (g), after cleaning with a developer, a second pattern layer 82B is formed on the first pattern layer 81B.

The plasma process step: referring to fig. 6 (h) and 6 (i), the VCSEL device covered with the first pattern layer 81B and the second pattern layer 82B is heated to transform the pattern layer 80B into the first lens layer 81 and the second lens layer 82, and then the second lens layer 82 and the first lens layer 81 are sequentially etched by Inductively Coupled Plasma (ICP) until the second lens layer 82 disappears and the first lens layer 81 forms a convex lens. In this case, the first lens layer 81 is the lens layer 80. The inductively coupled plasma can use the following gases: ar and BCl₃Combination of (A), Ar and Cl₂Combination of (5), BCl₃And Cl₂Combination of (1), N₂And BCl₃Combination of (1), N₂And Cl₂Or combinations of the above gases, but is not limited to the above gases and combinations thereof. The mechanism of the plasma process step is the non-uniform etching caused by the local Loading Effect and the concentration difference of the reaction gas, so that the edge of the second lens layer 82 and the edge of the first lens layer 81 at the "small scale" are difficult to maintain their right angles, and thus the arc angle can be formed.

Specifically, the first lens layer 81 and the second lens layer 82 may be made of the same material or different materials. Therefore, the first photoresist 81A and the second photoresist 82A) may be the same or different.

Referring to fig. 7, a method for manufacturing a microlens chip having a structure according to the second embodiment of the present invention is shown in fig. 2, which includes the following steps in sequence.

Preparing a VCSEL wafer: referring to fig. 7 (a), a surface emitting laser (VCSEL) device 1 composed of the substrate 10, the first mirror layer 20, the active layer 30 and the second mirror layer 40 as described above is prepared.

A first lithography (photolithography) step: referring to fig. 7 (b), a first photoresist 81A is coated on the second mirror layer 40 of the VCSEL device 1 by spin coating, and the first photoresist 81A may be a negative photoresist or a positive photoresist, such as a negative photoresist. Referring to fig. 7 (c), a negative photoresist mask M is used to block the light source for exposure. Referring to fig. 7 (d), after the cleaning with the developer, a first pattern layer 81B is formed on the second mirror layer 40.

A second lithography (photolithography) step: referring to fig. 7 (e), a second photoresist 82A is spin-coated on the first pattern layer 81B, and the second photoresist 82A may be a negative photoresist or a positive photoresist, such as a negative photoresist. Referring to fig. 7 (f), a negative photoresist mask M is used to block the light source for exposure. Referring to fig. 7 (g), after cleaning with a developer, a second pattern layer 82B is formed on the first pattern layer 81B.

Thermal reflow (thermal reflow) procedure: referring to fig. 7 (h), the VCSEL device 1 covered with the first pattern layer 81B and the second pattern layer 82B is heated and melted at a temperature exceeding the glass transition temperature (Tg) of the second pattern layer 82B, so that the first pattern layer 81B and the second pattern layer 82B are respectively transformed into the first lens layer 81 of the planar lens and the second lens layer 82 of the convex lens.

Referring to fig. 8, another method for manufacturing a microlens chip having a structure according to the second embodiment of the present invention is shown in fig. 2, which sequentially comprises the following steps.

Preparing a VCSEL wafer: referring to fig. 8 (a), a surface emitting laser (VCSEL) device 1 composed of the substrate 10, the first mirror layer 20, the active layer 30 and the second mirror layer 40 as described above is prepared.

A first lithography (photolithography) step: referring to fig. 8 (b), a first photoresist 81A is coated on the second mirror layer 40 of the VCSEL device 1 by spin coating, wherein the first photoresist 81A may be a negative photoresist or a positive photoresist, such as a negative photoresist. Referring to fig. 8 (c), a negative photoresist mask M is used to block the light source for exposure. Referring to fig. 8 (d), after the cleaning with the developer, a first pattern layer 81B is formed on the second mirror layer 40.

A second lithography (photolithography) step: referring to fig. 8 (e), a second photoresist 82A is coated on the first pattern layer 81B by spin coating, and the second photoresist 82A may be a negative photoresist or a positive photoresist, such as a negative photoresist. Referring to fig. 8 (f), a negative photoresist mask M is used to block the light source for exposure. Referring to fig. 8 (g), after cleaning with a developer, a second pattern layer 82B is formed on the first pattern layer 81B.

The plasma process step: referring to fig. 8 (h), the VCSEL device 1 covered with the first pattern layer 81B and the second pattern layer 82B is heated to convert the pattern layer 80B into the first lens layer 81 and the second lens layer 82, and then the second lens layer 82 and the first lens layer 81 are sequentially etched by Inductively Coupled Plasma (ICP) until the second lens layer 82 forms a convex lens.

Thermal reflow (thermal reflow) procedure: referring to fig. 8 (i), the VCSEL device 1 covered with the first and second patterning layers 81B and 82B is heated and melted at a temperature exceeding the glass transition temperature (Tg) of the second patterning layer 82B, so that the second patterning layer 82B is annealed.

Similar to the manufacturing method of FIG. 8, the manufacturing method of the microlens chip of the second embodiment of the present invention shown in FIG. 2 sequentially comprises the following steps: a step of preparing a VCSEL wafer, a first lithography (photolithography) step, a second lithography (photolithography) step, and then the following steps are sequentially performed.

A thermal reflow step of heating and thermally reflowing the VCSEL device 1 covered with the first pattern layer 81B and the second pattern layer 82B at a temperature exceeding the glass transition temperature (Tg) of the second pattern layer 82B, so that the first pattern layer 81B and the second pattern layer 82B are transformed into the first lens layer 81 of a planar lens and the second lens layer 82 of a convex lens, respectively.

The plasma process step: the second lens layer 82 is etched by Inductively Coupled Plasma (ICP).

Referring to fig. 9, the structure of the fourth embodiment of the microlens chip of the present invention is a derivative structure of the first embodiment, and therefore, the same points of the fourth embodiment as the first embodiment will not be described again. The difference between the fourth embodiment and the first embodiment is that the surface emitting laser device 1 in the fourth embodiment comprises: the substrate 10, the first mirror Layer 20 disposed above the substrate 10, the Active Layer 30(Active Layer) disposed above the first mirror Layer 20, the second mirror Layer 40 disposed above the Active Layer 30, and a metal contact Layer 90 disposed above the second mirror Layer 40; the lens layer 80 is disposed above the metal contact layer 90, and the lens layer 80 directly covers the metal contact layer 90 and directly contacts the metal contact layer 90. The metal contact layer 90 may be in contact with a metal electrode (not shown).

Referring to fig. 10, the structure of the fifth embodiment of the microlens chip of the present invention is a derivative structure of the fourth embodiment, and therefore, the same points of the fifth embodiment as the fourth embodiment will not be described again. The difference between the fifth embodiment and the fourth embodiment is that the lens layer 80 in the fifth embodiment includes the first lens layer 81 directly covering the metal contact layer 90 and the second lens layer 82 directly covering the first lens layer 81. The first lens layer 81 is a planar lens, and the second lens layer 82 is a convex lens.

Referring to fig. 11, the structure of the sixth embodiment of the microlens chip of the present invention, the sixth embodiment is a derivative structure of the fourth embodiment, and therefore, the same points of the sixth embodiment as the fourth embodiment will not be described again. The difference between the sixth embodiment and the fourth embodiment is that the molybdenum metal layer 50 is disposed under the substrate 10 in the sixth embodiment, the substrate 10 is also disposed with the accommodating space 13, and the reflective metal layer 12 is disposed inside the accommodating space 13; the enhancement layer 11 is further disposed between the reflective metal layer 12 and the first mirror layer 30, and the enhancement layer 11 extends to between the reflective metal layer 12 and the substrate 10; the adhesion layer 51 is further disposed between the substrate 10 and the molybdenum metal layer 50.

Claims

1. A microlens chip, comprising: a surface emitting laser element (1) and a lens layer (80); the surface emitting laser device is characterized in that the lens layer (80) directly covers the surface emitting laser device (1) and directly contacts with the surface emitting laser device (1).

2. The microlens chip as claimed in claim 1, wherein the surface emitting laser element (1) comprises: a substrate (10), a first mirror layer (20) disposed over the substrate (10), an active layer (30) disposed over the first mirror layer (20), and a second mirror layer (40) disposed over the active layer (30); the lens layer (80) is arranged above the second mirror layer (40), and the lens layer (80) directly covers the second mirror layer (40) and is directly contacted with the second mirror layer (40).

3. The microlens chip as claimed in claim 1, wherein the surface emitting laser element (1) comprises: a substrate (10), a first mirror layer (20) disposed over the substrate (10), an active layer (30) disposed over the first mirror layer (20), a second mirror layer (40) disposed over the active layer (30), and a metal contact layer (90) disposed over the second mirror layer (40); the lens layer (80) is arranged above the metal contact layer (90), and the lens layer (80) directly covers the metal contact layer (90) and is directly contacted with the metal contact layer (90).

4. A microlens chip as claimed in claim 2 or 3, wherein the lens layer (80) is an optical lens formed by structuring an optical layer.

5. A microlens chip as claimed in claim 2 or 3, characterized in that the lens layer (80) is a convex lens.

6. The microlens chip as in claim 2 or 3 wherein the lens layer (80) has a refractive index of between 1.4 and 1.7.

7. The microlens chip according to claim 2 or 3, wherein the substrate (10) is a GaAs substrate, an AlInGaN substrate, or an InGaAsP substrate.

8. A microlens chip as claimed in claim 2 or 3, wherein the lens layer (80) is a half cylinder, a hemisphere or a half ellipsoid.

9. A microlens chip as claimed in claim 2 or 3, wherein the lens layer (80) is a photoresist lens formed by structuring a photoresist layer directly overlying the second mirror layer (40).

10. The microlens chip as in claim 2 or 3, wherein the lens layer (80) is a convex lens, the refractive index of the lens layer (80) is between 1.4 and 1.7, the substrate (10) is a GaAs substrate, the lens layer (80) is a hemisphere, and the lens layer (80) is the photoresist lens formed by structuring a photoresist layer directly overlying the second lens layer (40).

11. A microlens chip as claimed in claim 2 or 3, characterized in that the lens layer (80) comprises a first lens layer (81) which directly overlies the second lens layer (40) and a second lens layer (82) which directly overlies the first lens layer (81).

12. The microlens chip as in claim 2 or 3, wherein the lens layer (80) comprises a first lens layer (81) directly overlying the second lens layer (40) and a second lens layer (82) directly overlying the first lens layer (81); the first lens layer (81) is a planar lens and the second lens layer (82) is a convex lens.

13. The microlens chip as in claim 2 or 3, wherein the lens layer (80) comprises a first lens layer (81) directly overlying the second lens layer (40) and a second lens layer (82) directly overlying the first lens layer (81); the first lens layer (81) and the second lens layer (82) are made of the same material or different materials.

14. The microlens chip as claimed in claim 2 or 3, wherein a molybdenum metal layer (50) is disposed under the substrate (10), the substrate (10) is further provided with a receiving space (13), and a reflective metal layer (12) is disposed inside the receiving space (13); an enhancement layer (11) is arranged between the reflective metal layer (12) and the first mirror layer (30), and the enhancement layer (11) extends to a position between the reflective metal layer (12) and the substrate (10); an adhesive layer (51) is disposed between the substrate (10) and the molybdenum metal layer (50).