CN112234097A - Ohmic contact structure of non-intentionally doped III-V group semiconductor and preparation method and application thereof - Google Patents
Ohmic contact structure of non-intentionally doped III-V group semiconductor and preparation method and application thereof Download PDFInfo
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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Abstract
The invention belongs to the technical field of photoelectronic semiconductors, and particularly relates to an ohmic contact structure of a non-specifically doped III-V group semiconductor, and a preparation method and application thereof. The ohmic contact structure includes: a non-intentionally doped group III-V semiconductor layer, and a nickel oxide layer on a surface thereof. The invention firstly provides an ohmic contact structure formed by a nickel oxide layer and a non-intentionally doped III-V group semiconductor layer, and successfully solves the technical problem that the non-intentionally doped III-V group semiconductor material is difficult to directly form good ohmic contact characteristics. Meanwhile, the transparent conductive characteristic of the nickel oxide film is utilized by the invention, and the nickel oxide film is used as an electrode of an active device of a III-V group semiconductor, so that the technical problems that the traditional contact electrode blocks signal light, reduces optical coupling efficiency and reduces the area of an effective active region in optical coupling are effectively solved.
Description
Technical Field
The invention belongs to the technical field of photoelectronic semiconductors, and particularly relates to an ohmic contact structure of a non-specifically doped III-V group semiconductor, and a preparation method and application thereof.
Background
The optical communication system has the advantages of large transmission capacity and long transmission distance, and is used as a main communication scheme of various communication services to bear the transmission and receiving and transmitting of the current main communication trunk line data.
In order to meet the requirements of higher data transmission rate and larger transmission capacity, key devices in the optical communication system also need to have the characteristics of larger bandwidth and lower power consumption. And III-V semiconductor materials represented by InGaAs and GaAs play an irreplaceable role in important optical communication devices such as semiconductor lasers, infrared light detectors and the like.
In order to realize good electrical characteristics of III-V semiconductor active devices, it is necessary to form good ohmic contact characteristics between the ohmic contact layer and the contact electrode of the optical communication device so as to eliminate the influence of parameters such as capacitance caused by schottky contact on characteristics such as high-speed response of the device.
However, in a conventional semiconductor active device, a contact electrode is usually formed by using a noble metal such as Au, Ti, Pt, Ge, or an alloy thereof as an electrode material through a magnetron sputtering method, and a III-V semiconductor material is not intentionally doped as an ohmic contact layer and cannot form a good ohmic contact with the conventional contact electrode, so that the conventional method is to perform high-concentration impurity doping on an epitaxial layer of the device and form an ohmic contact with the conventional contact electrode by using a p + -type or n + -type III-V semiconductor as the ohmic contact layer.
However, in practical research, it is found that the conventional contact electrode has a high reflectivity in an optical communication band, so that signal light cannot transmit the contact electrode, the optical coupling efficiency of the vertical optical coupling semiconductor device is greatly reduced, the area of an effective active region of the device is reduced due to the existence of an electrode region, and the performance of the device is reduced; meanwhile, the high-concentration impurity doping of the ohm contact layer in the device also increases the complexity and the preparation difficulty of the epitaxial layer of the semiconductor device.
Disclosure of Invention
It is a first object of the present invention to provide an ohmic contact structure for non-intentionally doping group III-V semiconductors.
The ohmic contact structure includes: a non-intentionally doped group III-V semiconductor layer, and a nickel oxide layer on a surface thereof.
In the research process of the scheme, the conventional semiconductor light-emitting element uses III-V group semiconductor materials as an ohmic contact structure, but the III-V group semiconductor materials are combined with noble metals or alloys thereof in a high-concentration doping mode, and the related content that intrinsic III-V group semiconductor materials are directly used as an ohmic contact layer is not seen; meanwhile, nickel oxide is generally used as an insulating layer or a suppression layer in the art, and functions mainly to prevent the metal of the ohmic contact layer from diffusing to the light reflection layer; furthermore, in order not to affect the ohmic contact characteristics, the thickness of the insulating layer or the inhibiting layer is usually controlled to be between 0.5nm and 5nm to realize the tunneling effect of electrons.
The invention firstly provides an ohmic contact structure formed by the nickel oxide layer and the non-intentionally doped III-V group semiconductor layer, and successfully solves the technical problem that the non-intentionally doped III-V group semiconductor material is difficult to directly form good ohmic contact characteristics. This inventive concept is not disclosed or suggested in the prior art.
Meanwhile, the transparent conductive characteristic of the nickel oxide film is utilized by the invention, and the nickel oxide film is used as an electrode of an active device of a III-V group semiconductor, so that the technical problems that the traditional contact electrode blocks signal light, reduces optical coupling efficiency and reduces the area of an effective active region in optical coupling are effectively solved.
In addition, the invention omits the traditional electrode material and obviously reduces the preparation cost of the electrode.
The non-intentionally doped group III-V semiconductor material employed in the present invention refers to a semiconductor material that is not doped with any impurities during the growth of the group III-V semiconductor material.
Preferably, the nickel oxide layer is a transparent conductive film with the thickness of 50-500 nm; when the thickness is 50-100nm, the ohmic contact performance formed by the semiconductor layer and the non-intentionally doped III-V group semiconductor layer is better.
Preferably, the nickel oxide layer is obtained by the following method: firstly, a nickel metal film is formed on the surface of the non-intentionally-doped III-V group semiconductor layer, and then the nickel metal film is thermally oxidized to form a nickel oxide layer. The process flow is simple, the controllability is strong, the obtained nickel oxide layer is more uniform and regular, and the overall performance is better.
Further preferably, the thermal oxidation temperature is 300-700 ℃, and when the temperature is 350-550 ℃, the obtained film layer is more uniform and regular under the condition; the time of the thermal oxidation is 3-30min, and can be adjusted according to actual conditions.
Further preferably, the thermal oxidation is performed by charging oxygen in an air atmosphere, and the charging flow rate of the oxygen is 2-3L/min.
Preferably, the material of the non-intentionally doped group III-V semiconductor layer is GaAs, InGaAs, InGaAsP, AlGaAs, InAlGaAs, or the like.
A second object of the present invention is to provide a method for preparing the ohmic contact structure, comprising:
s1, forming a non-specifically doped III-V semiconductor layer on the surface of the substrate;
s2, forming a nickel metal film on the surface of the non-intentionally doped III-V semiconductor layer after photoetching;
s3, carrying out thermal oxidation and stripping on the nickel metal film to form a nickel oxide layer with an ohmic electrode pattern.
According to the invention, the nickel metal film is firstly formed on the surface of the non-intentionally doped III-V group semiconductor layer, and then the nickel metal film is further oxidized to obtain the nickel oxide layer, so that the purpose of directly forming good ohmic contact characteristics by using the non-intentionally doped III-V group semiconductor material is realized by utilizing the characteristics of the nickel oxide layer; meanwhile, the technical problems that the traditional contact electrode blocks signal light, reduces optical coupling efficiency and reduces the effective active area when in optical coupling are effectively solved by utilizing the transparent conductivity of the nickel oxide.
Preferably, the substrate is semi-insulating indium phosphide. Good lattice matching can be realized with the non-intentionally doped III-V semiconductor material, and a high-quality non-intentionally doped III-V semiconductor epitaxial layer can be conveniently grown.
Preferably, the non-intentionally doped group III-V semiconductor layer is formed by a MOCVD method (Metal-organic Chemical Vapor Deposition) or a MBE method (Molecular Beam Epitaxy). It is further preferred that the growth temperature is maintained at 650-660 ℃ to obtain a more uniform film layer.
Preferably, the nickel oxide layer is a transparent conductive film with the thickness of 50-500 nm; when the thickness is 50-100nm, the ohmic contact performance formed by the semiconductor layer and the non-intentionally doped III-V group semiconductor layer is better.
Preferably, the temperature of the thermal oxidation is 300-700 ℃, and the time is 3-30 min; when the thermal oxidation temperature is 350-550 ℃, the time is 3-10min, so as to obtain a uniform and regular nickel oxide film.
And the thermal oxidation is carried out by charging oxygen in the air atmosphere, and the charging flow of the oxygen is 2-3L/min.
The third purpose of the invention is to provide a semiconductor device structure, which comprises a substrate and the ohmic contact structure, wherein a p-type semiconductor layer or an n-type semiconductor layer is further arranged between the substrate and the ohmic contact structure.
The p-type semiconductor layer or the n-type semiconductor layer is one or more layers of p-doped or n-doped semiconductor layers.
A fourth object of the present invention is to provide an application of the above ohmic contact structure or semiconductor device structure in an optical communication device.
The ohmic contact structure and the p-i-NiO and n-i-NiO basic structures based on the ohmic contact structure (i in the structure represents that III-V semiconductors are not doped intentionally) solve the problem that the III-V semiconductor materials doped unintentionally cannot form ohmic contact directly, and meanwhile, the transparent conductive characteristic of the nickel oxide film is utilized to remarkably improve the optical coupling efficiency of a semiconductor device, reduce the electrode contact epitaxial layer doped at high concentration and greatly reduce the complexity of the epitaxial layer of the device.
Preferably, the optical communication device is a semiconductor laser, a semiconductor infrared light detector, a bipolar transistor, or the like.
The semiconductor infrared light detector is obtained by the following method:
s1, forming a p-type semiconductor layer or an n-type semiconductor layer on the surface of the substrate;
s2, forming a non-specifically doped III-V semiconductor layer on the surface of the p-type semiconductor layer or the n-type semiconductor layer; preferably, the growth temperature is maintained at 650-660 ℃;
s2, forming a nickel metal film on the surface of the non-intentionally doped III-V semiconductor layer after photoetching; preferably, the thickness of the nickel metal thin film is 50-500 nm;
s3, carrying out thermal oxidation and stripping on the nickel metal film to form a nickel oxide layer with an ohmic electrode pattern;
preferably, the temperature of the heat treatment is 350-550 ℃, and the treatment time is 3-10min, under the condition, a uniform and regular nickel oxide film is obtained. The heat treatment is carried out under the condition of filling oxygen in the air atmosphere, and the filling flow rate of the oxygen is 2L/min;
s4, etching the non-intentionally doped III-V semiconductor layer to form a mesa structure of the optical detector;
s5, forming a Ge/Au/Ti metal layer on the surface of the p-type semiconductor layer or the n-type semiconductor layer, and removing the redundant metal except the electrode pattern by a stripping method; and then, annealing treatment is carried out in the atmosphere of nitrogen to form ohmic contact, so that the preparation of the semiconductor photodetector is completed.
The invention has the following beneficial effects:
(1) according to the invention, the nickel oxide film and the non-intentionally doped typical III-V group semiconductor form good ohmic contact characteristics, so that the technical problem that the non-intentionally doped III-V group semiconductor is difficult to form the ohmic contact characteristics with the traditional electrode material is solved; meanwhile, the contact of a high-concentration doped electrode with an epitaxial layer is reduced, so that the complexity of the epitaxial layer of the device is greatly reduced; and the use of precious metal is reduced, and the preparation cost of the semiconductor device is reduced.
(2) The invention utilizes the transparent conductive characteristic of the nickel oxide film, can obviously improve the optical coupling efficiency of a semiconductor device, and solves the problem that the prior metal or metal alloy electrode blocks signal light when the device is optically coupled.
(3) The invention adopts a thermal oxidation method to prepare the nickel oxide layer, has simple process flow and easy realization, and can be widely applied to the fields of optical communication, semiconductor device design, preparation and the like.
(4) The p-i-NiO and n-i-NiO provided by the invention can be applied to semiconductor devices such as infrared light detectors, semiconductor lasers, bipolar transistors and the like.
Drawings
FIG. 1 is a schematic view of an ohmic contact structure obtained in example 1;
FIG. 2 is an atomic force microscope photograph of a nickel oxide film in an ohmic contact structure obtained in example 1.
FIG. 3 is an ohmic contact characteristic, I-V curve, of the ohmic contact structure obtained in example 1.
Fig. 4 is a schematic structural view of the semiconductor device obtained in example 2.
In the figure: 1-a substrate; 2-non-intentionally doping the group III-V semiconductor layer; 3-a nickel oxide layer; a 4-p type semiconductor layer (or an n type semiconductor layer).
Detailed Description
The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example 1
This example provides an ohmic contact structure of nickel oxide with an unintentionally doped group III-V semiconductor, as shown in fig. 1.
The ohmic contact structure includes:
the indium phosphide (InP) substrate can realize good lattice matching with the III-V semiconductor material, and is convenient for growing a high-quality III-V semiconductor epitaxial layer;
the non-intentionally doped III-V group semiconductor layer is arranged on the surface of the substrate, and the semiconductor material can be non-intentionally doped GaAs, InGaAs, InGaAsP, AlGaAs or InAlGaAs; in this embodiment InGaAs;
the nickel oxide layer is a transparent conductive film and is arranged on the surface of the non-intentionally-doped III-V group semiconductor layer.
The ohmic contact structure is obtained by the following method:
s1, forming a single-layer or multi-layer unintentionally doped InGaAs layer on the InP substrate using an epitaxial growth apparatus, such as an MOCVD (Metal-organic Chemical Vapor Deposition) apparatus or an MBE (Molecular Beam Epitaxy) apparatus; the specific growth temperature is kept at 650 ℃;
s2, spin-coating uniform photoresist on the non-specifically doped InGaAs epitaxial layer, and completing electrode pattern transfer through photoetching treatment; then forming a nickel metal film on the non-specifically doped InGaAs layer in an argon atmosphere by adopting a magnetron sputtering method; the thickness of the deposited nickel metal film is 50-500 nanometers.
S3, reacting in an oxygen atmosphere by adopting a rapid thermal treatment method to form a nickel oxide film, forming ohmic contact characteristics between the nickel oxide film and the nickel oxide film, and forming an ohmic electrode pattern by adopting a stripping process; nickel oxide film blocks with different intervals are prepared on the III-V group semiconductor epitaxial layer, so that the measurement and analysis of the contact characteristics between the nickel oxide film blocks and the III-V group semiconductor epitaxial layer are facilitated.
Wherein the temperature of the heat treatment is 350-550 ℃, and the treatment time is 3-10min, so that the uniform and regular nickel oxide film is obtained under the condition.
The heat treatment is carried out under the condition of filling oxygen in the air atmosphere, and the filling flow rate of the oxygen is 2L/min.
As shown in FIG. 2, the surface of the nickel oxide film prepared by the thermal oxidation method shown in the atomic force microscope diagram is relatively uniform and regular.
As shown in fig. 3, the I-V characteristic curve indicates that the nickel oxide prepared by the thermal oxidation method can form good ohmic contact characteristics with the unintentionally doped InGaAs.
Example 2
This example provides a p-i-NiO structure of a semiconductor device, and as shown in fig. 4, a p-type InGaAs layer is added to the structure obtained in example 1.
Wherein the p-type InGaAs layer comprises one or more p-type doped semiconductor layers;
i represents a non-intentionally doped group III-V semiconductor layer.
The obtained p-i-NiO structure can be used for forming semiconductor devices such as an infrared light detector, a semiconductor laser, a bipolar transistor and the like. By utilizing the transparent conductive characteristic of the nickel oxide film, the optical coupling efficiency of a semiconductor device can be improved while good ohmic contact is formed with a non-intentionally doped III-V group semiconductor, the contact of a high-concentration doped electrode with an epitaxial layer is reduced, and the complexity of the epitaxial layer of the device is greatly reduced.
Example 3
Taking the p-i-NiO basic structure as an example for preparing the infrared light detector, the preparation method comprises the following steps:
s1, sequentially forming a single-layer or multi-layer p-type InGaAs layer and an unintentionally doped InGaAs absorption layer on the InP substrate using an epitaxial growth apparatus, such as an MOCVD (Metal-organic Chemical Vapor Deposition) apparatus or an MBE (Molecular Beam Epitaxy) apparatus; the specific growth temperature is kept at 650 ℃;
s2, spin-coating uniform photoresist on the non-specifically doped InGaAs absorption layer, and completing electrode pattern transfer through photoetching treatment; then forming a nickel metal film on the non-specifically doped InGaAs layer in the argon atmosphere by adopting a magnetron sputtering method; the thickness of the deposited nickel metal film is 50-500 nanometers.
S3, reacting in an oxygen atmosphere by adopting a rapid thermal treatment method to form a nickel oxide film, forming ohmic contact characteristics between the nickel oxide film and the nickel oxide film, and forming an ohmic electrode pattern by adopting a stripping process;
wherein the temperature of the heat treatment is 350-550 ℃, and the treatment time is 3-30min, so that the uniform and regular nickel oxide film is obtained under the condition.
The heat treatment is carried out under the condition of filling oxygen in the air atmosphere, and the filling flow rate of the oxygen is 2L/min.
S4, etching the non-specifically doped InGaAs absorption layer by adopting a dry etching or wet etching mode to form a table-board structure of the optical detector;
s5, forming annular Ge/Au/Ti multilayer metal on the p-type InGaAs layer by adopting a magnetron sputtering method, and removing redundant metal outside the electrode pattern by a stripping method; then, annealing treatment is carried out in the atmosphere of nitrogen to form ohmic contact, and the preparation of the semiconductor photodetector is completed;
wherein the annealing temperature is 420 ℃, the annealing time is 2min, and the annealing is carried out in the atmosphere of nitrogen.
Example 4
Similar to embodiment 2, the only difference is that the p-type semiconductor layer is an n-type InP layer.
Example 5
Taking the preparation of the infrared light detector with the n-i-NiO basic structure as an example, the preparation method comprises the following steps:
s1, sequentially forming a single-layer or multi-layer n-type InP layer and a non-specifically doped InGaAs absorption layer on an InP substrate using an epitaxial growth apparatus, such as an MOCVD (Metal-organic Chemical Vapor Deposition) apparatus or an MBE (Molecular Beam Epitaxy) apparatus; the specific growth temperature is kept at 650 ℃;
and S2, spin-coating uniform photoresist on the non-specifically doped InGaAs absorption layer, and performing photoetching treatment to complete electrode pattern transfer. Then forming a nickel metal film on the non-specifically doped InGaAs layer in the argon atmosphere by adopting a magnetron sputtering method; the thickness of the deposited nickel metal film is 50-500 nanometers.
S3, reacting in an oxygen atmosphere by adopting a rapid thermal treatment method to form a nickel oxide film, forming ohmic contact characteristics between the nickel oxide film and the nickel oxide film, and forming an ohmic electrode pattern by adopting a stripping process;
wherein the temperature of the heat treatment is 350-550 ℃, and the treatment time is 3-10min, so that the uniform and regular nickel oxide film is obtained under the condition.
The heat treatment is carried out under the condition of filling oxygen in the air atmosphere, and the filling flow rate of the oxygen is 2L/min.
S4, etching the non-specifically doped InGaAs layer by adopting a dry etching or wet etching mode to form a table-board structure of the optical detector;
and S5, forming annular Au/Ti multilayer metal on the n-type InP layer by adopting a magnetron sputtering method, and removing the redundant metal except the electrode pattern by a stripping method. And then annealing in a nitrogen atmosphere to form ohmic contacts. Completing the preparation of the semiconductor photodetector;
wherein the annealing temperature is 420 ℃, the annealing time is 2min, and the annealing is carried out in the atmosphere of nitrogen.
The invention successfully provides an ohmic contact structure of nickel oxide and a non-intentionally doped III-V group semiconductor and a preparation method thereof, and solves the technical problem that the existing non-intentionally doped III-V group semiconductor material is difficult to directly form ohmic contact characteristics with the traditional electrode material; meanwhile, by utilizing the ohmic contact characteristic of the nickel oxide film and the non-intentionally doped III-V group semiconductor, two basic structures of p-i-NiO and n-i-NiO are provided, and the nickel oxide film can be used for forming semiconductor devices such as an infrared light detector, a semiconductor laser, a bipolar transistor and the like. By utilizing the transparent conductive characteristic of the nickel oxide film, the optical coupling efficiency can be obviously improved, the contact of a high-concentration doped electrode with an epitaxial layer is reduced, and the complexity of the epitaxial layer of the device is greatly reduced. Thus, the invention has the following distinct advantages over the prior art:
(1) the cost is reduced: the traditional III-V semiconductor device electrode material adopts noble metals such as Pt/Ti/Au/Ge and the like, and the preparation cost of the electrode is higher. The nickel oxide can form ohmic contact with III-V group semiconductor to be used as a contact electrode of a device, so that the use of noble metal is reduced, the price of a metal nickel target for preparing the nickel oxide is lower, and the preparation cost of the device is greatly reduced.
(2) The optical coupling performance of the III-V semiconductor device is improved: the provided nickel oxide has ohmic contact characteristic with a non-intentionally doped III-V group semiconductor, and due to the transparent conductive characteristic of the nickel oxide, the problem of blocking of signal light when a metal or metal alloy electrode is optically coupled in a device can be solved, and the optical coupling efficiency of the device is improved.
(3) Simplifying the epitaxial layer structure of a III-V semiconductor active device: the provided nickel oxide and the ohmic contact characteristic of the non-intentionally doped III-V group semiconductor can save an electrode contact layer doped with high-concentration impurities on one side of the III-V group semiconductor active device, and simplify the epitaxial layer structure and the preparation complexity of the III-V group semiconductor active device.
Although the invention has been described in detail hereinabove with respect to a general description and specific embodiments thereof, it will be apparent to those skilled in the art that modifications or improvements may be made thereto based on the invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (10)
1. An ohmic contact structure, comprising: a non-intentionally doped group III-V semiconductor layer, and a nickel oxide layer on a surface thereof.
2. The ohmic contact structure of claim 1, wherein the nickel oxide layer is a transparent conductive film having a thickness of 50-500 nm; preferably 50-100 nm.
3. The ohmic contact structure of claim 2, wherein the nickel oxide layer is obtained by: firstly, a nickel metal film is formed on the surface of the non-intentionally-doped III-V group semiconductor layer, and then the nickel metal film is thermally oxidized to form a nickel oxide layer.
4. The ohmic contact structure according to claim 3, wherein the temperature of the thermal oxidation is 300-700 ℃, preferably 350-550 ℃;
and/or the thermal oxidation is carried out by charging oxygen in the air atmosphere, and the charging flow rate of the oxygen is 2-3L/min.
5. The ohmic contact structure of claim 4 wherein the material of the non-intentionally doped group III-V semiconductor layer is GaAs, InGaAs, InGaAsP, AlGaAs, or inalgas.
6. A method of forming an ohmic contact structure according to any of claims 1 to 5, comprising:
s1, forming a non-specifically doped III-V semiconductor layer on the surface of the substrate;
s2, forming a nickel metal film on the surface of the non-intentionally doped III-V semiconductor layer after photoetching;
s3, carrying out thermal oxidation and stripping on the nickel metal film to form a nickel oxide layer with an ohmic electrode pattern.
7. The method of claim 6, wherein the substrate is semi-insulating indium phosphide.
8. A semiconductor device structure comprising a substrate and the ohmic contact structure of any one of claims 1 to 5, wherein a p-type semiconductor layer or an n-type semiconductor layer is further provided between the substrate and the ohmic contact structure to form both p-i-NiO and n-i-NiO structures.
9. Use of the ohmic contact structure of any one of claims 1 to 5 or the semiconductor device structure of claim 8 in an optical communication device.
10. Use according to claim 9, wherein the optical communication device is a semiconductor laser, a semiconductor infrared light detector, a bipolar transistor.
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| CN112951942A (en) * | 2021-04-23 | 2021-06-11 | 湖南汇思光电科技有限公司 | Method for manufacturing germanium avalanche photodetector based on gallium arsenide substrate |
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| CN101413102A (en) * | 2008-12-05 | 2009-04-22 | 长春理工大学 | Method for preparing NiO transparent conductive film by two steps |
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| US20080131988A1 (en) * | 2004-09-14 | 2008-06-05 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
| US20060076574A1 (en) * | 2004-10-12 | 2006-04-13 | Liang-Wen Wu | Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capability |
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