CN112230119B - Power device conduction voltage non-stop measuring circuit - Google Patents
Power device conduction voltage non-stop measuring circuit Download PDFInfo
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- CN112230119B CN112230119B CN202011312738.3A CN202011312738A CN112230119B CN 112230119 B CN112230119 B CN 112230119B CN 202011312738 A CN202011312738 A CN 202011312738A CN 112230119 B CN112230119 B CN 112230119B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a power device conducting voltage non-stop measuring circuit, which comprises a switching device M1, wherein the drain electrode of the switching device M1 is connected with the collector electrode of a power device to be measured; the gate of the switching device M1 is connected to the anode of the diode D1, one end of the resistor R1 and one end of the capacitor C1, respectively; the other end of the capacitor C1 is respectively connected with an emitter of the power device to be tested, one end of the resistor R0 and one end of the capacitor C2; the other end of the resistor R0 is connected with the source of the switching device M1 and one end of the resistor R2 respectively; the other end of the resistor R2 is connected with the other end of the capacitor C2 and is used as the output end of the measuring circuit; the other end of the resistor R1 is connected with the cathode of the diode D1 and receives the grid voltage of the power device to be measured. The circuit of the invention has simple structure, and can complete the measurement of the conduction voltage of the power device without an additional power supply.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a circuit for measuring the conduction voltage of a power device without stopping.
Background
The power device is used as the core of a power electronic system and is often the main cause of system failure. According to the industrial survey report in the whole field, the most vulnerable part of the power electronic system is a power device, about 34% of the power electronic system failures are caused by chip or welding failures of the power electronic device, and if real-time effective maintenance measures cannot be taken quickly, serious consequences and huge economic losses can be caused. Therefore, the health state of the power device is researched, the device reliability technology is perfected, and the method has important significance for improving the overall reliability of a power electronic system.
At present, the health management of a power device is usually realized by monitoring device aging characteristic parameters, and the principle is that electrical or thermal parameters of the device regularly change along with the aging of the device, the parameters are called aging characteristic parameters which reflect the aging degree of the device, and if a prediction algorithm is added, the residual life of the device can be estimated. Among these parameters, the turn-on voltage of the device is of great interest because the device can be measured directly during operation of the power electronic system, i.e. without stopping the machine. However, in the measurement of the on-state voltage without actually stopping, the test circuit needs to bear the same voltage drop when the power device is turned off, which usually reaches several hundred or even several thousand volts, and when the device is turned on, the test circuit needs to accurately measure the millivolt magnitude, which undoubtedly puts higher requirements on the measurement circuit.
Disclosure of Invention
Aiming at the defects in the prior art, the on-voltage of the power device can be measured without stopping by the on-voltage non-stop measuring circuit for the power device.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
the non-stop measuring circuit for the turn-on voltage of the power device comprises a switching device M1, wherein the drain electrode of the switching device M1 is connected with the collector electrode of the power device to be measured; the gate of the switching device M1 is connected to the anode of the diode D1, one end of the resistor R1 and one end of the capacitor C1, respectively; the other end of the capacitor C1 is respectively connected with an emitter of the power device to be tested, one end of the resistor R0 and one end of the capacitor C2; the other end of the resistor R0 is connected with the source of the switching device M1 and one end of the resistor R2 respectively; the other end of the resistor R2 is connected with the other end of the capacitor C2 and is used as the output end of the measuring circuit; the other end of the resistor R1 is connected with the cathode of the diode D1 and receives the grid voltage of the power device to be measured.
Further, the switching device M1 is a MOS device.
The invention has the beneficial effects that: the circuit of the invention has simple structure, and can complete the measurement of the breakover voltage of the power device without an additional power supply; and because the high-voltage isolation of the circuit and a power electronic system is realized by the switching device, the voltage measurement under various high-voltage environments can be applicable only by selecting the switching devices with different withstand voltage values.
Drawings
FIG. 1 is a circuit diagram of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1, the non-stop power device turn-on voltage measurement circuit includes a switching device M1, a drain of the switching device M1 is connected to a collector of the power device under test; the gate of the switching device M1 is connected to the anode of the diode D1, one end of the resistor R1 and one end of the capacitor C1, respectively; the other end of the capacitor C1 is respectively connected with an emitter of the power device to be tested, one end of the resistor R0 and one end of the capacitor C2; the other end of the resistor R0 is connected with the source of the switching device M1 and one end of the resistor R2 respectively; the other end of the resistor R2 is connected with the other end of the capacitor C2 and is used as the output end of the measuring circuit; the other end of the resistor R1 is connected with the cathode of the diode D1 and receives the grid voltage of the power device to be measured.
In one embodiment of the present invention, the switching device M1 is a MOS device. Taking an IGBT as an example of a power device to be measured, the turn-on voltage of the IGBT refers to a voltage Vce between a collector and an emitter when the device is turned on. In fig. 1, VG is the gate voltage of the IGBT to be measured, the MOS device M1 is a high-voltage MOS switch device, and Vout is the output of the measurement circuit, i.e., the IGBT on-voltage.
When the IGBT device to be tested is turned off, VG is smaller than the threshold voltage of the MOS device M1, the MOS device M1 is turned off, Vout is directly connected with an emitter, and the output of the circuit is the emitter voltage. The high voltage born by the IGBT to be tested when the IGBT is switched off is withstand voltage by the MOS device M1, and the rest part of the measuring circuit is isolated from the high voltage part in the power electronic system. Therefore, in the circuit design, it is only necessary to select a switching device with an appropriate withstand voltage according to the high-voltage environment of the device under test, and the switching device M1 itself is not limited to the MOS device.
When the IGBT device to be tested is started, the voltage of the drain (D) of the MOS device M1 is reduced to a device conducting voltage, VG is larger than the threshold voltage of the MOS device M1, the resistor R1 and the capacitor C1 form a MOS device M1 grid voltage delay network, the starting time of the MOS device M1 is delayed compared with that of the device to be tested, namely the MOS device M1 is not started until the voltage of the drain of the MOS device M1 is reduced to the conducting voltage, so that the influence of high voltage on a measuring circuit is avoided to the greatest extent, and the measuring circuit is protected. At this time, the on-resistance (typically several hundred ohms) of the MOS device M1 and the resistor R0 form a voltage divider, Vout is the voltage drop across the resistor R0, and the value of Vout substantially equal to Vce can be satisfied as long as the resistor R0 is ensured to be large enough in design. The resistor R2 and the capacitor C2 form a high-pass filter, so that the influence of high-frequency noise on the measurement result can be further reduced.
When the IGBT device to be measured is turned off again, VG is smaller than the threshold voltage of the MOS device M1, the grid electrode of the MOS device M1 is rapidly discharged through the diode D1, the turn-off speed of the MOS device M1 is improved, and high-voltage isolation of the measuring circuit is guaranteed.
In summary, the circuit of the invention has simple structure, and the measurement of the conduction voltage of the power device can be completed without an additional power supply; and because the high-voltage isolation of the circuit and a power electronic system is realized by the switching device, the voltage measurement under various high-voltage environments can be applicable only by selecting the switching devices with different withstand voltage values.
Claims (2)
1. The circuit for measuring the conduction voltage of the power device without stopping is characterized by comprising a switching device M1, wherein the drain electrode of the switching device M1 is connected with the collector electrode of a power device to be measured; the grid of the switching device M1 is respectively connected with the anode of a diode D1, one end of a resistor R1 and one end of a capacitor C1; the other end of the capacitor C1 is respectively connected with an emitter of the power device to be tested, one end of the resistor R0 and one end of the capacitor C2; the other end of the resistor R0 is connected with the source of the switching device M1 and one end of the resistor R2 respectively; the other end of the resistor R2 is connected with the other end of the capacitor C2 and serves as the output end of the measuring circuit; the other end of the resistor R1 is connected with the cathode of the diode D1 and receives the grid voltage of the power device to be measured.
2. The non-stop power device turn-on voltage measurement circuit according to claim 1, wherein the switching device M1 is a MOS device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2019113816913 | 2019-12-27 | ||
| CN201911381691.3A CN111025118A (en) | 2019-12-27 | 2019-12-27 | Power device conduction voltage non-stop measuring circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112230119A CN112230119A (en) | 2021-01-15 |
| CN112230119B true CN112230119B (en) | 2022-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911381691.3A Pending CN111025118A (en) | 2019-12-27 | 2019-12-27 | Power device conduction voltage non-stop measuring circuit |
| CN202011312738.3A Active CN112230119B (en) | 2019-12-27 | 2020-11-20 | Power device conduction voltage non-stop measuring circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911381691.3A Pending CN111025118A (en) | 2019-12-27 | 2019-12-27 | Power device conduction voltage non-stop measuring circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104181462A (en) * | 2014-09-12 | 2014-12-03 | 中国科学院上海高等研究院 | Measuring circuit for breakover voltage drop of semiconductor switch device |
| CN105811765A (en) * | 2016-04-19 | 2016-07-27 | 南京航空航天大学 | Voltage clamping circuit for on-line measurement of conduction voltage drop of power transistor |
| CN106569007A (en) * | 2016-11-11 | 2017-04-19 | 中国人民解放军海军工程大学 | IGBT turn-off voltage and on-voltage integrated measurement circuit |
| CN110174603A (en) * | 2019-05-13 | 2019-08-27 | 上海交通大学 | The on-line measurement circuit of power semiconductor conduction voltage drop |
-
2019
- 2019-12-27 CN CN201911381691.3A patent/CN111025118A/en active Pending
-
2020
- 2020-11-20 CN CN202011312738.3A patent/CN112230119B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104181462A (en) * | 2014-09-12 | 2014-12-03 | 中国科学院上海高等研究院 | Measuring circuit for breakover voltage drop of semiconductor switch device |
| CN105811765A (en) * | 2016-04-19 | 2016-07-27 | 南京航空航天大学 | Voltage clamping circuit for on-line measurement of conduction voltage drop of power transistor |
| CN106569007A (en) * | 2016-11-11 | 2017-04-19 | 中国人民解放军海军工程大学 | IGBT turn-off voltage and on-voltage integrated measurement circuit |
| CN110174603A (en) * | 2019-05-13 | 2019-08-27 | 上海交通大学 | The on-line measurement circuit of power semiconductor conduction voltage drop |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112230119A (en) | 2021-01-15 |
| CN111025118A (en) | 2020-04-17 |
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