CN112198411B - IGBT health monitoring method based on gate voltage change - Google Patents
IGBT health monitoring method based on gate voltage change Download PDFInfo
- Publication number
- CN112198411B CN112198411B CN202011308353.XA CN202011308353A CN112198411B CN 112198411 B CN112198411 B CN 112198411B CN 202011308353 A CN202011308353 A CN 202011308353A CN 112198411 B CN112198411 B CN 112198411B
- Authority
- CN
- China
- Prior art keywords
- igbt
- voltage
- stage
- target
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses an IGBT health monitoring method based on gate voltage change, which comprises the following steps: s1, establishing an aging characteristic parameter database, and determining a failure threshold voltage; s2, obtaining the working condition of the target IGBT and monitoring the grid voltage of the target IGBT in real time; s3, extracting the rising voltage of the fourth stage of the grid voltage when the target IGBT is started; and S4, comparing the fourth-stage rising voltage with the database according to the working condition of the target IGBT, judging whether the fourth-stage rising voltage exceeds a failure threshold voltage, if so, judging that the target IGBT fails, otherwise, judging that the target IGBT is effective, and finishing the IGBT health monitoring. The parameter detection is implemented in the device grid drive circuit, so that a high-power part in a power electronic system is avoided, the design difficulty of a monitoring system is greatly reduced, the isolation is simple, and the normal work of an IGBT device is not influenced in the monitoring process.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a gate voltage change-based IGBT health monitoring method.
Background
As a power electronic device of medium-high power mainstream, the IGBT is widely used in each power electronic converter, and is often a main cause of failure of the power electronic converter. It was investigated that power electronic system failures in excess of 1/3 were due to chip or solder failure of the power electronic device. Therefore, the health state of the power electronic device is researched, the device reliability technology is perfected, and the method has important significance for improving the overall reliability of the power electronic system. The existing direct monitoring method is to take the target IGBT out of the working environment and test whether it is healthy (failed), and the method needs to be shut down and disassembled, which consumes a lot of manpower and time.
The principle of state monitoring is that the aging degree of a device can be represented by the change of characteristic data, and the state monitoring is proved to be a low-cost and efficient means for improving the reliability of a system. Among these characteristic data, Vce _ on (collector-to-gate voltage) is the most promising aging characteristic parameter that can be monitored without shutdown, but the variation trend is not monotonous during the aging process of the device, so that it is not feasible to directly use it for health monitoring of the IGBT.
Disclosure of Invention
Aiming at the defects in the prior art, the IGBT health monitoring method based on the change of the gate voltage solves the problem that the existing IGBT can be subjected to health monitoring only after shutdown and disassembly.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
the IGBT health monitoring method based on the gate voltage change comprises the following steps:
s1, establishing an aging characteristic parameter database of the IGBT with the same specification as the target IGBT through a cyclic aging experiment, and determining a failure threshold voltage;
s2, obtaining the working condition of the target IGBT and monitoring the grid voltage of the target IGBT in real time;
s3, dividing the grid voltage of the target IGBT when being started into four stages, and extracting the rising voltage of the fourth stage;
and S4, comparing the fourth-stage rising voltage with the database according to the working condition of the target IGBT, judging whether the fourth-stage rising voltage exceeds a failure threshold voltage, if so, judging that the target IGBT fails, otherwise, judging that the target IGBT is effective, and finishing the IGBT health monitoring.
Further, the specific method of step S3 is:
according to the formula:
obtaining the cut-off time t of the first stage1(ii) a Wherein R isgResistor R in equivalent circuit for simplifying IGBT chipGThe resistance value of (1); cgeIs the electricity of the grid capacitanceCapacity value; ln (·) is a logarithm based on a constant e; vthIs the threshold voltage; vGAIs the Miller plateau voltage;
according to the formula:
obtaining the deadline t of the second stage2(ii) a Wherein g ismIs a transconductance; i isLIs the inductor current;
according to the formula:
obtaining the deadline t of the third stage3(ii) a Wherein A isN-The area of the overlapped part of the grid and the N-drift region; i isgIs the gate current; q is the amount of charge; epsilonsIs the dielectric constant of the semiconductor; n is a radical ofDIs the charge concentration of the space charge layer in the drift region; coxIs the capacitance value of the gate oxide layer; vceIs the voltage between the collector and the emitter of the device; vonA device turn-on voltage;
according to the formula:
obtaining a target IGBT grid voltage V corresponding to the time t in the fourth stagege(t); wherein t is>t3。
Further, the fourth-stage rising voltage compared with the database in the step S4 is 1.1t3～1.5t3Any voltage value in the time period.
Further, the fourth-stage rising voltage compared with the database in step S4 is t3The voltage value corresponding to +150ns time.
The invention has the beneficial effects that: the parameter detection is implemented in the device grid drive circuit, so that a high-power part in a power electronic system is avoided, the design difficulty of a monitoring system is greatly reduced, the isolation is simple, and the normal work of an IGBT device is not influenced in the monitoring process.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a simplified equivalent circuit diagram of an IGBT chip;
FIG. 3 is a circuit for testing the switching characteristics of an IGBT device;
FIG. 4 is a waveform diagram of gate voltage when the IGBT is turned on;
FIG. 5 is a diagram of the FS-IGBT cell structure;
fig. 6 is a schematic diagram showing changes in gate voltage of the IGBT after the 100 th and 2700 th cycles in the embodiment.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1, the IGBT health monitoring method based on gate voltage variation includes the following steps:
s1, establishing an aging characteristic parameter database of the IGBT with the same specification as the target IGBT through a cyclic aging experiment, and determining a failure threshold voltage;
s2, obtaining the working condition of the target IGBT and monitoring the grid voltage of the target IGBT in real time;
s3, dividing the grid voltage of the target IGBT when being started into four stages, and extracting the rising voltage of the fourth stage;
and S4, comparing the fourth-stage rising voltage with the database according to the working condition of the target IGBT, judging whether the fourth-stage rising voltage exceeds a failure threshold voltage, if so, judging that the target IGBT fails, otherwise, judging that the target IGBT is effective, and finishing the IGBT health monitoring.
The specific method of step S3 is: according to the formula:
obtaining the cut-off time t of the first stage1(ii) a Wherein R isgResistor R in equivalent circuit for simplifying IGBT chipGThe resistance value of (1); cgeIs the capacitance value of the gate capacitor; ln (·) is a logarithm based on a constant e; vthIs the threshold voltage; vGAIs the Miller plateau voltage;
according to the formula:
obtaining the deadline t of the second stage2(ii) a Wherein g ismIs a transconductance; i isLIs the inductor current;
according to the formula:
obtaining the deadline t of the third stage3(ii) a Wherein A isN-The area of the overlapped part of the grid and the N-drift region; i isgIs the gate current; q is the amount of charge; epsilonsIs the dielectric constant of the semiconductor; n is a radical ofDIs the charge concentration of the space charge layer in the drift region; coxIs the capacitance value of the gate oxide layer; vceIs the voltage between the collector and the emitter of the device; vonA device turn-on voltage;
according to the formula:
obtaining a target IGBT grid voltage V corresponding to the time t in the fourth stagege(t); wherein t is>t3。
In an embodiment of the present invention, fig. 5 is a cellular structure of an IGBT device, the IGBT device is essentially a BJT controlled by a MOSFET, a switching process is determined by the MOSFET, and a simplified equivalent circuit model thereof is as shown in fig. 2, and according to a circuit relationship, it can be obtained:
wherein the grid-emission capacitor CgeThe capacitance formed by overlapping the polysilicon gate and the channel region under the gate, the gate-source capacitance CgcAlso called Miller capacitance, formed by a gate oxide capacitance CoxAnd the gate lower drift region depletion layer capacitance Cgc1And (4) forming.
εsIs the dielectric constant of the semiconductor, AN-Is a gate and N-Area of the overlapping part of the drift region, NDIs the drift region space charge layer charge concentration.
As shown in fig. 3 and 4, the IGBT gate voltage and current variation law is directly related to the gate capacitance. The change of the gate voltage and the current of the IGBT reflects the internal mechanism of the IGBT, the dynamic change of the IGBT is used as a characteristic quantity, the health state data is obtained, and the health state data is compared with the value measured by the existing sensor of the system through a specific algorithm, so that the method is a practical and effective device health state evaluation scheme. For IGBT devices, the most common causes of failure are internal partial chip failure and internal bond wire blowing, which both reduce the total active area of the operating semiconductor inside the IGBT device, with the most immediate consequence of causing internal gate capacitance changes, reflected in the outside of the module as gate voltage and current changes. It can also be seen from the above that in the fourth stage given in this application, CgcAnd the non-linear characteristic of (1) and VceThe influence of the variation is excluded and the response of the gate voltage and the current appears as a characteristic of a linear circuit, so it is feasible that the present application monitors the health of the IGBT without stopping based on the data of the fourth stage.
In the specific implementation process, the IRG4BC40WpbF type IGBTFor example, when the gate voltage changes after the 100 th and 2700 th cycles as shown in fig. 6 (in the figure, the ordinate is the gate voltage and the abscissa is time), it can be seen from fig. 6 that the gate voltage after the 2700 th cycle changes from the gate voltage after the 100 th cycle, and the change is most obvious in the fourth stage, more specifically, 1.1t3～1.5t3The voltage variation corresponding to the time period is the largest. In the present embodiment, the end time t of the third stage3About 400ns (400 ns in one square), the maximum variation occurs at 550 ns. Therefore, when the fourth-stage rising voltage compared with the database is specifically selected, 1.1t can be obtained3～1.5t3As the selected time interval, t is3+150ns as the specific selected time node.
In conclusion, the parameter detection is implemented in the device gate drive circuit, so that a high-power part in a power electronic system is avoided, the design difficulty of the monitoring system is greatly reduced, the isolation is simple, and the normal work of the IGBT device is not influenced in the monitoring process.
Claims (3)
1. A gate voltage change-based IGBT health monitoring method is characterized by comprising the following steps:
s1, establishing an aging characteristic parameter database of the IGBT with the same specification as the target IGBT through a cyclic aging experiment, and determining a failure threshold voltage;
s2, obtaining the working condition of the target IGBT and monitoring the grid voltage of the target IGBT in real time;
s3, dividing the grid voltage of the target IGBT when being started into four stages, and extracting the rising voltage of the fourth stage;
s4, comparing the fourth-stage rising voltage with a database according to the working condition of the target IGBT, judging whether the fourth-stage rising voltage exceeds a failure threshold voltage, if so, judging that the target IGBT fails, otherwise, judging that the target IGBT is effective, and finishing the IGBT health monitoring;
the specific method of step S3 is as follows:
according to the formula:
obtaining the cut-off time t of the first stage1(ii) a Wherein R isgResistor R in equivalent circuit for simplifying IGBT chipGThe resistance value of (1); cgeIs the capacitance value of the gate capacitor; ln (·) is a logarithm based on a constant e; vthIs the threshold voltage; vGAIs the Miller plateau voltage;
according to the formula:
obtaining the deadline t of the second stage2(ii) a Wherein g ismIs a transconductance; i isLIs the inductor current;
according to the formula:
obtaining the deadline t of the third stage3(ii) a Wherein A isN-The area of the overlapped part of the grid and the N-drift region; i isgIs the gate current; q is the amount of charge; epsilonsIs the dielectric constant of the semiconductor; n is a radical ofDIs the charge concentration of the space charge layer in the drift region; coxIs the capacitance value of the gate oxide layer; vceIs the voltage between the collector and the emitter of the device; vonA device turn-on voltage;
according to the formula:
obtaining a target IGBT grid voltage V corresponding to the time t in the fourth stagege(t); where t > t3。
2. The gate voltage variation based IGBT health monitoring method according to claim 1, wherein the fourth-stage rising voltage compared with the database in step S4 is 1.1t3～1.5t3Any voltage value in the time period.
3. The gate voltage variation based IGBT health monitoring method according to claim 1, wherein the fourth-stage rising voltage compared with the database in step S4 is t3The voltage value corresponding to +150ns time.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911381687.7A CN111007380A (en) | 2019-12-27 | 2019-12-27 | IGBT health monitoring method based on gate voltage change |
| CN2019113816877 | 2019-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112198411A CN112198411A (en) | 2021-01-08 |
| CN112198411B true CN112198411B (en) | 2021-06-15 |
Family
ID=70119216
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911381687.7A Pending CN111007380A (en) | 2019-12-27 | 2019-12-27 | IGBT health monitoring method based on gate voltage change |
| CN202011308353.XA Active CN112198411B (en) | 2019-12-27 | 2020-11-20 | IGBT health monitoring method based on gate voltage change |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911381687.7A Pending CN111007380A (en) | 2019-12-27 | 2019-12-27 | IGBT health monitoring method based on gate voltage change |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN111007380A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112491250A (en) * | 2020-11-26 | 2021-03-12 | 电子科技大学 | Method for estimating IGBT switch conversion time |
| CN112485629B (en) * | 2020-11-26 | 2022-01-04 | 电子科技大学 | IGBT converter health assessment method based on harmonic analysis |
| CN112444711A (en) * | 2020-12-09 | 2021-03-05 | 电子科技大学 | IGBT parallel system health assessment method based on electromagnetic radiation |
| CN112485632A (en) * | 2020-12-09 | 2021-03-12 | 电子科技大学 | IGBT health assessment system and method based on volt-ampere relation change |
| CN113419156A (en) * | 2021-06-15 | 2021-09-21 | 合肥工业大学 | Power semiconductor device gate oxide state monitoring system and using method thereof |
| CN113884851A (en) * | 2021-10-26 | 2022-01-04 | 电子科技大学 | IGBT health monitoring method based on Kelvin emitter voltage change |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101551689A (en) * | 2008-03-31 | 2009-10-07 | 上海电气自动化设计研究所有限公司 | Constant-current source circuit for hot resistance calibration system of device aging screening machine |
| CN101303390B (en) * | 2008-06-23 | 2013-03-06 | 上海集成电路研发中心有限公司 | Method for judging MOS device performance degeneration |
| JP4951642B2 (en) * | 2009-03-19 | 2012-06-13 | 株式会社日立製作所 | Power conversion device and elevator device using the same |
| CN104678272B (en) * | 2015-01-08 | 2017-10-31 | 京东方科技集团股份有限公司 | The electricity aging method of PMOS thin film transistor (TFT)s |
| CN104849645A (en) * | 2015-06-08 | 2015-08-19 | 哈尔滨工业大学 | MOSFET degeneration assessment method based on Miller platform voltage, and MOSFET residual life prediction method applying the method |
| CN105158670B (en) * | 2015-10-13 | 2018-04-17 | 中国人民解放军海军工程大学 | IGBT health status monitoring methods based on collector leakage stream |
| US10291225B2 (en) * | 2016-10-07 | 2019-05-14 | Texas Instruments Incorporated | Gate driver with VGTH and VCESAT measurement capability for the state of health monitor |
| US10613134B2 (en) * | 2016-12-22 | 2020-04-07 | Texas Instruments Incorporated | High-side gate over-voltage stress testing |
| CN110133468A (en) * | 2019-05-30 | 2019-08-16 | 西南交通大学 | A kind of strong zygonema aging monitoring and assessing method of the IGBT based on multivariable |
-
2019
- 2019-12-27 CN CN201911381687.7A patent/CN111007380A/en active Pending
-
2020
- 2020-11-20 CN CN202011308353.XA patent/CN112198411B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111007380A (en) | 2020-04-14 |
| CN112198411A (en) | 2021-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112198411B (en) | IGBT health monitoring method based on gate voltage change | |
| Wang et al. | Review and analysis of SiC MOSFETs’ ruggedness and reliability | |
| Liu et al. | In situ condition monitoring of IGBTs based on the miller plateau duration | |
| Ali et al. | A simple plug-in circuit for IGBT gate drivers to monitor device aging: Toward smart gate drivers | |
| Mingxing et al. | Condition monitoring IGBT module bond wire lift-off using measurable signals | |
| Tu et al. | Analytical evaluation of IGBT turn-on loss with double pulse testing | |
| CN111919129A (en) | Apparatus and method for monitoring power of multiple chips | |
| Zheng et al. | Online Aging Parameter Extraction with Induced Voltage $ v_ {\text {eE}} $ between Kelvin and Power Emitter in Turn-off Progress for IGBT Modules | |
| CN113064042A (en) | Junction temperature extraction method of power semiconductor device | |
| CN112363037A (en) | Limit performance verification circuit, system and method for field effect transistor | |
| Ren et al. | Real-time aging monitoring for power MOSFETs using threshold voltage | |
| Shi et al. | A current sensorless IGBT junction temperature extraction method via parasitic parameters between power collector and auxiliary collector | |
| CN113884850A (en) | Power semiconductor characteristic parameter testing system and method | |
| CN113884851A (en) | IGBT health monitoring method based on Kelvin emitter voltage change | |
| CN114210605B (en) | Silicon carbide power semiconductor device testing method | |
| Yang et al. | A novel in situ IGBT and FWD junction temperature estimation technique for IGBT module based on on-state voltage drop measurement | |
| CN114785097A (en) | Method for determining parasitic inductance of MOSFET power loop | |
| Chen et al. | Chip metallization aging monitoring with induced voltage v eE between Kelvin and power emitter for high power IGBT modules | |
| Chen et al. | Dynamic characteristics analysis of 1.2 kV SiC VDMOS under high temperature up to 375° C | |
| Zhang et al. | On gate oxide degradation mechanism and chip-related failure precursors of IGBT | |
| Yamasaki et al. | Power device degradation estimation by machine learning of gate waveforms | |
| CN204089581U (en) | The filter circuit of the main power power-supply of high pressure and the power supply input circuit of air conditioner | |
| Wei et al. | A novel assessment method of gate oxide degradation based on IGBT turn-on losses for on-line reliability monitoring | |
| Qi et al. | Avalanche capability characterization of 1.2 kV SiC power MOSFETs compared with 900V Si CoolMOS | |
| Ren et al. | A method for health monitoring of power MOSFETs based on threshold voltage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |