CN1122165A - Arangement for recovery of threshold voltage shift of noncrystalline siliceous film transistor device - Google Patents

Arangement for recovery of threshold voltage shift of noncrystalline siliceous film transistor device Download PDF

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Publication number
CN1122165A
CN1122165A CN 94191947 CN94191947A CN1122165A CN 1122165 A CN1122165 A CN 1122165A CN 94191947 CN94191947 CN 94191947 CN 94191947 A CN94191947 A CN 94191947A CN 1122165 A CN1122165 A CN 1122165A
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display
voltage
time
transistor
tft
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CN 94191947
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Chinese (zh)
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李学能
胡戴春
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Prime View HK Ltd
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Prime View HK Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243—Details of the generation of driving signals
    • G09G2310/0254—Control of polarity reversal in general, other than for liquid crystal displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/041—Temperature compensation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/048—Preventing or counteracting the effects of ageing using evaluation of the usage time
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3614—Control of polarity reversal in general

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)

Abstract

The device for restoring the threshold voltage Vth of amorphous-silicon film transistor deposited substracte applies grid voltage to each transistor to make Vth drift with time during its use. The unused time of LCD display may be detected by the device, which generates voltage Vg' with opposite polarity to that of Vg and applies Vg' to grid of transistor in LCD display during its use for making Vth drift in different direction from Vg', so keeping active drive voltage on transistor in LCD display.

Description

Restore the device of amorphous silicon film transistor device threshold voltage drift
The present invention relates generally to about amorphous silicon (the threshold voltage shift restoring means of thin film transistor (TFT) (TFT) device of α-Si:H).More particularly, the present invention relates in the light-emitting diode display such or α-Si:HTFT the device that in the pixel switch element, uses such as data driver and scanner driver circuit.
Because non-crystalline silicon tft has good switching characteristic, so they are widely used for the thin film transistor display.Yet, threshold voltage V ThIn when work drift, demonstrate the instability of amorphous silicon, resemble temperature and the factor that applies the voltage may cause its characteristic variations during utilizing LCD display.By discovering, threshold voltage drifts about in time because grid bias cause.When device is worked, will speed up the drift of threshold voltage under more and more higher temperature conditions.
When using diagrammatic representation, threshold voltage V ThCan limit by the square root of abscissa (the gate voltage Vg of TFT) and TFT leakage current point of crossing along ordinate.In service in LCD display, compare V ThIt is necessary that big grid voltage Vg provides the electric current of the TFT pixel element that is enough to drive LCD display.V during whole ThDrift motion and along with temperature increases and the phenomenon quickened has reduced the effective driving voltage between grid, the source, also reduced source, leakage current Ids, this has caused the reduction of LCD TFT display performance.
Therefore, in the operating period, keep threshold value V in LCD display ThStable is very important and desirable, because V ThDrift make the Vg can not be normally switch pixel TFT.
For example, as shown in Figure 1, when positive 40 volts of DC voltage being added to during at 25 ℃ on the TFT grid about 15 hours, threshold voltage 6-7 volts that may drift about.As shown in Figure 2,30 volts of alternating-current pulses with 50% duty cycle are being added under the about 88 hours situation of TFT grid V ThMay drift about about 5 volts.The direction of threshold voltage shift depends on the sign of voltage between the grid source of a given TFT.When negative DC voltage is added to TFT grid certain hour during the cycle, then produce a negative threshold voltage shift.For example, as shown in Figure 1, when 20 volts of negative voltages are added to the TFT grid, V ThDrift is approximately negative 2.3 volts.
Be generally used for describing V ThDrift delta V ThEquation can be as follows:
Δ V Th=Aexp (Ea/KT) (logt) αVg βWherein, A is a constant, and K is a Boltzmann constant, and T is the absolute temperature of TFT, and t is the time that bias voltage Vg is added to the TFT grid.Activation energy numerical value Ea, parameter alpha and β utilize the best acquisition of known approximation by least squares by experiment, because these parameters depend on the character of the insulator that uses in samples of amorphous silicon and the display.
Above-mentioned equation is clearly represented V ThAnd the dependence between temperature, time, the gate voltage.One of theory of explaining this phenomenon is Δ V ThBe because nitride institute trapped charges causes.Another kind of theory is caused by producing metastable Si dangling bonds in the accumulation layer of amorphous silicon film.
After about 10,000 hours, observe about 4 volts voltage drift in 80 ℃ of operations at TFT-LCD.Usually, in order to keep enough big drive current, in the operating period, require Δ V at display ThLess than 2 volts.During harshness resembling projection TV was used, TFT was in the constant condition of high temperature, Δ V ThIt is apparent in view just to become in than short-term.Δ V ThSizable other application be can reach and aircraft industry and auto manufacturing comprised.
In service in TFT-LCD display, because the mobility of α-SiTFT is low, so need high gate voltage Vg so that produce pixel element or other element that enough big electric current comes driving display.V ThDrift reduced effective driving voltage between the grid source, thereby reduced source-drain current Ids, cause performance to reduce.Therefore wish very much to keep low V between the operating period at display Th
Several known methods threshold voltage V that can reduce and/or slow down is arranged ThDrift.A kind of known method is to adopt the slow down skew of threshold voltage of high annealing, for example, in high temperature furnace LCD display is cured a schedule time.Yet, after being assembled, TFT-LCD display makes its annealing again, and that is unpractiaca, and the expense costliness.
Control Δ V ThAnother kind of method be to reduce added gate voltage Vg because Δ V ThBe proportional to Vg.Yet, because the mobility of non-crystalline silicon tft is low, so demanding gate voltage drives other element so that produce enough electric currents.So low gate voltage will result in the reduction greatly of LCD display performance.
The third method adopts negative bias to make the V that just drifts about Th" return ".The method is when not encouraging the sweep trace of TFT grid voltage to be added on the sweep trace.This method is in order to make V ThDrift reduce to minimum and need carry out complicated analysis, this is because there is actual restriction in the amplitude and time interval of added minus gate voltage.Its reason is that for each frame, each sweep trace all must be opened in 1/60 second.This makes in order to have the V of suitable drift ThThe circuit that is worth and needs is very complicated.
Therefore, the purpose of this invention is to provide a kind of device, be used to improve the recovery of the threshold voltage shift of non-crystalline silicon tft-LCD display.
Another object of the present invention provides a kind of simple device, so that reduce the drift of threshold voltage.
Another purpose of the present invention provides a kind of device, is used for restoring when TFT-LCD display is closed and is not used the drift of threshold voltage.
The invention provides a kind of threshold voltage V that is used to restore thin film amorphous silicon transistor ThDevice, described transistor is deposited on the substrate of a display, during use a grid voltage Vg is added on each transistor and causes V ThIncrease in time, this device comprises:
Detection part, it operationally is connected with display, is used to detect when display is not using;
The voltage production part, it operationally is connected with described detection part, is used for when not utilizing display, producing and the opposite polarity voltage Vg ' of Vg, wherein,
Only when display time spent not, just described voltage Vg ' is revolved and be added to above the transistorized grid of display, make V ThReduce in time, thus effective driving voltage in this time execution of maintenance display.Thus, maintenance is to effective driving voltage of LCD display pixel element.
To more be expressly understood these and other objects of the present invention in conjunction with following accompanying drawing.
Fig. 1 is the TFT threshold voltage shift and the curve map of add gate voltage.
Fig. 2 is the curve map of work TFT threshold voltage shift after 88 hours.
Fig. 3 applies negative 20 volts of voltages curve map that the TFT threshold voltage restores after 16 hours.
Fig. 4 is that the present invention is used to control V ThThe block scheme of device.
Fig. 2 represents the grid of an amorphous silicon body pipe is added the 30V alternating current, approximately through after 88 hours, and typical threshold voltage shift situation.As seen from Figure 2, between this operating period of 88 hours, V ThDrift is approximately 5 volts.
Fig. 3 is the curve map that threshold voltage provided by the invention restores.Fig. 3 is illustrated in and closes during TFT-LCD display, and the grid of TFT adds negative 20 volts of voltages after about 16 hours, V ThReset into from initial V ThApproximately do not exceed 0.9 volt,, then can make threshold voltage reset into initial V fully if be applied on the gate electrode in the long period and/or higher negative voltage Th
Can be added to the amplitude and the duration of the negative dc voltage of TFT device grids according to the purposes design of display.
Fig. 4 discloses the block scheme of ReSet Circuit of the present invention.The TFT glass substrate 10 of thin film transistor (TFT) 12 that shown on it deposit.Also expressed one, temperature sensor 14 on the substrate 10, be preferably thermopair, diode or electric resistance sensor, it can directly be deposited on the substrate 10, also can be fixed in the display, so that this sensor and substrate 10 are adjacent.Voltage generation circuit 16 is connected on the grid of TFT12.Timer, temperature sensor and testing circuit 18 are connected on temperature sensor 14 and the voltage generation circuit 16, are used for the operation of control circuit 16.
One circuit 20 is provided, is used for indication testing circuit 18 when using TFT12.Circuit 20 comprises a normal relay 22 and an on/OFF switch 24 of opening.When opening switch 24, make normally opened relay 22 closures, can make testing circuit 18 excitation timers begin to detect the use of LCD display thus.That is to say that testing circuit 18 detects relay 22 and when opens.So, circuit 18 make circuit 16 can be only when it detects LCD display and is in off position, one voltage Vg ' is added on the grid of TFT12, when in running order, drifts about by the opposite direction of the caused drift direction of Vg with LCD display so that cause Vth.
During utilizing the present invention, can be applied to voltage Vg ' above the grid of amorphous silicon transistor 12 simply with regular time and fixing amplitude, so that stably whenever LCD is in the drift skew that closed condition just makes voltage threshold.
Novel method of the present invention needs the following step: detect the step that LCD display is in the time of closed condition; Only when display is in OFF state, a negative bias is added to the transistorized grid of TFT so that restore the threshold voltage shift that LCD display produces during in working order.This method comprises the steps: that also being in closed condition one preset time in LCD display was added to the negative voltage of steady state value above the transistorized grid of TFT in the cycle.
In another embodiment, this method comprises the steps: that also by following equation one negative voltage being added to the transistorized grid of TFT continues for some time
ΔV th＝Aexp(-Ea/KT)(logt) αV β
So, the method and apparatus about threshold voltage shift is restored that relates to the non-crystalline silicon tft device is disclosed.Particularly when this device is used for the LCD display of data driver and scanner driver circuit or pixel switch element.Only when LCD display was in OFF state or is not used, the method and apparatus of this novelty utilized the negative voltage signal that itself produces in the LCD display unit and this negative voltage signal is added on the grid of non-crystalline silicon tft.This method and apparatus will make the threshold drift of device restore, thereby strengthen service ability and the serviceable life that has prolonged display.
But, in more senior application facet, in order to calculate more accurately amplitude and the time need be added to the voltage Vg on the crystal 12, can comprise that the circuit 18 of the temperature of substrate 10 calculates the appropriate voltage that adds when LCD display is in OFF state thereon and required time by its calculated value.Aforementioned calculation may be essential in such as HD-application such as TV projection, and TFT is exposed under the quite high temperature in this application.

Claims (8)

1. threshold voltage V who is used to restore the thin film amorphous silicon transistor (12) on the substrate (10) that is deposited on display ThDevice, and causing V ThBetween the operating period of Zeng Jiaing gate voltage Vg is added on each transistor in time, this device comprises:
Be operably connected to the detection part (18) on the display, be used to detect the time of not using display;
Be operably connected to the voltage production part (16) of detection part, be used for when not using display, produce and the opposite polarity voltage Vg ' of Vg, wherein,
Only when display does not use, voltage Vg ' is added on the transistor gate of display, is used to make V ThReduce in time, keep thus this time of display carry out in effective driving voltage.
2. according to a kind of device of claim 1, wherein:
Detection part (18) comprises and is used to detect the parts that display (10) is in the time quantum of user mode; And
Only in obsolete a period of time of display voltage Vg ' is added on transistor (12) grid, the amplitude of described voltage is proportional to the time quantum that display is in user mode.
3. according to a kind of device of claim 2, wherein:
Pick-up unit (18) comprises the parts that are used for detecting its temperature in display (10) is in time of user mode; And
The amplitude that the temperature of voltage Vg ' when being in user mode with display is directly proportional applies a period of time.
4. according to the device of claim 3, wherein, temperature detection part (18) comprises that one is deposited on the temperature sensor (14) on the display substrate (10).
5. according to the device of claim 3, wherein, temperature detection part (18) comprises the temperature sensor with the display substrate adjacency.
6. according to the device of claim 5, wherein, temperature sensor (14) is to be selected from a kind of in one group that is made of thermopair, diode and electric resistance sensor.
7. according to the device of claim 1, wherein, voltage production part (16) comprises battery supply.
8. according to any one described device in the aforementioned claim, wherein, display (10) is a LCD.
CN 94191947 1993-04-30 1994-05-10 Arangement for recovery of threshold voltage shift of noncrystalline siliceous film transistor device Pending CN1122165A (en)

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US5568893A 1993-04-30 1993-04-30
US08/055,688 1993-04-30

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CN (1) CN1122165A (en)
AU (1) AU6150094A (en)
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WO (1) WO1994025954A1 (en)

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TW241357B (en) 1995-02-21
JPH06347753A (en) 1994-12-22
AU6150094A (en) 1994-11-21
WO1994025954A1 (en) 1994-11-10

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