AU6150094A - Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device - Google Patents

Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device

Info

Publication number
AU6150094A
AU6150094A AU61500/94A AU6150094A AU6150094A AU 6150094 A AU6150094 A AU 6150094A AU 61500/94 A AU61500/94 A AU 61500/94A AU 6150094 A AU6150094 A AU 6150094A AU 6150094 A AU6150094 A AU 6150094A
Authority
AU
Australia
Prior art keywords
recovery
film transistor
threshold voltage
amorphous silicon
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU61500/94A
Inventor
Dyi-Chung Hy
Sywe Neng Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Prime View HK Ltd
Original Assignee
Prime View HK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prime View HK Ltd filed Critical Prime View HK Ltd
Publication of AU6150094A publication Critical patent/AU6150094A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243—Details of the generation of driving signals
    • G09G2310/0254—Control of polarity reversal in general, other than for liquid crystal displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/041—Temperature compensation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/048—Preventing or counteracting the effects of ageing using evaluation of the usage time
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3614—Control of polarity reversal in general
AU61500/94A 1993-04-30 1994-03-10 Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device Abandoned AU6150094A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5568893A 1993-04-30 1993-04-30
US055688 1993-04-30
PCT/GB1994/000467 WO1994025954A1 (en) 1993-04-30 1994-03-10 Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device

Publications (1)

Publication Number Publication Date
AU6150094A true AU6150094A (en) 1994-11-21

Family

ID=21999534

Family Applications (1)

Application Number Title Priority Date Filing Date
AU61500/94A Abandoned AU6150094A (en) 1993-04-30 1994-03-10 Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device

Country Status (5)

Country Link
JP (1) JPH06347753A (en)
CN (1) CN1122165A (en)
AU (1) AU6150094A (en)
TW (1) TW241357B (en)
WO (1) WO1994025954A1 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701136A (en) * 1995-03-06 1997-12-23 Thomson Consumer Electronics S.A. Liquid crystal display driver with threshold voltage drift compensation
US5600345A (en) * 1995-03-06 1997-02-04 Thomson Consumer Electronics, S.A. Amplifier with pixel voltage compensation for a display
TW573290B (en) 2000-04-10 2004-01-21 Sharp Kk Driving method of image display apparatus, driving apparatus of image display apparatus, and image display apparatus
JP2001337650A (en) * 2000-05-24 2001-12-07 Canon Inc Liquid crystal display equipment with built-in memory means
US7569849B2 (en) 2001-02-16 2009-08-04 Ignis Innovation Inc. Pixel driver circuit and pixel circuit having the pixel driver circuit
CA2355067A1 (en) * 2001-08-15 2003-02-15 Ignis Innovations Inc. Metastability insensitive integrated thin film multiplexer
AU2002352830A1 (en) * 2001-11-20 2003-06-23 International Business Machines Corporation Active matrix organic light-emitting-diodes with amorphous silicon transistors
EP1331627B1 (en) 2002-01-24 2012-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the semiconductor device
JP3990167B2 (en) * 2002-03-04 2007-10-10 Ｎｅｃ液晶テクノロジー株式会社 Liquid crystal display device driving method and liquid crystal display device using the driving method
JP4024642B2 (en) 2002-10-24 2007-12-19 シャープ株式会社 Image reading apparatus and image reading method
CA2419704A1 (en) 2003-02-24 2004-08-24 Ignis Innovation Inc. Method of manufacturing a pixel with organic light-emitting diode
JP4016962B2 (en) 2003-05-19 2007-12-05 セイコーエプソン株式会社 Electro-optical device and driving method of electro-optical device
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
TWI254898B (en) * 2003-10-02 2006-05-11 Pioneer Corp Display apparatus with active matrix display panel and method for driving same
GB0402046D0 (en) * 2004-01-29 2004-03-03 Koninkl Philips Electronics Nv Active matrix display device
KR20050080318A (en) * 2004-02-09 2005-08-12 삼성전자주식회사 Method for driving of transistor, and driving elementusing, display panel and display device using the same
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
CA2495726A1 (en) 2005-01-28 2006-07-28 Ignis Innovation Inc. Locally referenced voltage programmed pixel for amoled displays
KR101172498B1 (en) * 2005-06-01 2012-08-10 삼성전자주식회사 Method for manufacturing liquid crystal display apparatus, liquid crystal display apparatus and aging system
CN100388342C (en) * 2005-06-06 2008-05-14 友达光电股份有限公司 Active type display device driving method
KR101282399B1 (en) * 2006-04-04 2013-07-04 삼성디스플레이 주식회사 Display device and driving method thereof
WO2007118332A1 (en) 2006-04-19 2007-10-25 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US8633873B2 (en) 2009-11-12 2014-01-21 Ignis Innovation Inc. Stable fast programming scheme for displays
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
WO2012156942A1 (en) 2011-05-17 2012-11-22 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
US9070775B2 (en) 2011-08-03 2015-06-30 Ignis Innovations Inc. Thin film transistor
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
JP6117197B2 (en) 2012-05-28 2017-04-19 パナソニック液晶ディスプレイ株式会社 Liquid crystal display
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
DE112014001402T5 (en) 2013-03-15 2016-01-28 Ignis Innovation Inc. Dynamic adjustment of touch resolutions of an Amoled display
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
US10997901B2 (en) 2014-02-28 2021-05-04 Ignis Innovation Inc. Display system
US10176752B2 (en) 2014-03-24 2019-01-08 Ignis Innovation Inc. Integrated gate driver
CA2872563A1 (en) 2014-11-28 2016-05-28 Ignis Innovation Inc. High pixel density array architecture
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2909813A1 (en) 2015-10-26 2017-04-26 Ignis Innovation Inc High ppi pattern orientation
DE102017222059A1 (en) 2016-12-06 2018-06-07 Ignis Innovation Inc. Pixel circuits for reducing hysteresis
JP6949518B2 (en) 2017-03-23 2021-10-13 パナソニック液晶ディスプレイ株式会社 Display device
US10714018B2 (en) 2017-05-17 2020-07-14 Ignis Innovation Inc. System and method for loading image correction data for displays
US11025899B2 (en) 2017-08-11 2021-06-01 Ignis Innovation Inc. Optical correction systems and methods for correcting non-uniformity of emissive display devices
US10971078B2 (en) 2018-02-12 2021-04-06 Ignis Innovation Inc. Pixel measurement through data line

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2042238B (en) * 1979-02-14 1982-12-08 Matsushita Electric Ind Co Ltd Drive circuit for a liquid crystal display panel

Also Published As

Publication number Publication date
TW241357B (en) 1995-02-21
CN1122165A (en) 1996-05-08
WO1994025954A1 (en) 1994-11-10
JPH06347753A (en) 1994-12-22

Similar Documents

Publication Publication Date Title
AU6150094A (en) Apparatus for recovery of threshold voltage shift in amorphous silicon thin-film transistor device
EP0513590A3 (en) Thin-film transistor and method for manufacturing it
EP0506027A3 (en) Electro-optical device and method for driving the same
SG64308A1 (en) Thin-film semiconductor device method of fabricating thin-film semiconductor device and display system using the same
AU7678894A (en) Silicon carbide field effect device
AU6742494A (en) Semiconductor device with a MOST provided with an extended drain region for high voltages
AU2123195A (en) Method and apparatus for recovering power from semiconductor circuit using thermoelectric device
EP0858110A4 (en) Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method
SG45267A1 (en) Method for making a semiconductor device having an anhydrous ferroelectric thin film
EP0647026A3 (en) Over current protection device for transistor.
AU1631595A (en) Method and device for measuring slope of driving road
AU639884B3 (en) Tennis practicing device
EP0480373A3 (en) Thin-film semiconductor device
GB2314969B (en) Method of fabricating a semiconductor device such as a thin film transistor
GB2258760B (en) Diamond field-effect transistor and method for making same
AU1749592A (en) Method and device for treating myopia
EP1117854A4 (en) Method and apparatus for forming polycrystalline and amorphous silicon films
AU4496297A (en) Roller hold down device for tapered cartons
DE69327434D1 (en) Thin-film semiconductor device and method for its production
TW317354U (en) Thin film transistor liquid crystal driving device
EP1044475A3 (en) Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
DE69634429D1 (en) TFT array of amorphous silicon
AU1904992A (en) Amorphous silicon antifuses and methods for fabrication thereof
EP0744776A3 (en) Amorphous silicon thin film transistor and method preparing same
GB9326344D0 (en) High voltage transistor for sub micron cmos processes