CN112201703A - 一种防边缘漏电的晶硅电池及其制备方法 - Google Patents
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Abstract
本发明涉及太阳能电池生产领域。一种防边缘漏电的晶硅电池，在晶硅电池的每片电池片的周侧有一层25‑40μm的高温绝缘膜，该高温绝缘膜在1000摄氏度时具有稳定性。该防边缘漏电的晶硅电池制备方法为，在电池片制备正负电极前在硅片的周侧制备一层25‑40μm的高温绝缘膜，然后在制备正负电极。本发明所设计的晶硅电池的电池片利用四周形成的耐高温绝缘膜杜绝了丝网印刷工序的金属浆料造成的边缘漏电，同时得益于更大的铝背场面积，提高了电池转换效率。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
在晶硅太阳能电池片制造的丝网印刷工序中，由于电子浆料无法避免的会污染台面纸、网版、台面、轨道及夹具，因此在硅片的印刷、传输过程中或多或少会被电子浆料玷污，产生沿电池边缘的表面漏电流，影响转换效率，严重的造成热斑、漏电，影响良率和可靠性。为了减少边缘漏电，通常情况下铝背场离硅片边缘为0.5mm-1mm，如果小于0.5mm，在印刷的过程中，一旦印偏或者边缘玷污，将会造成边缘漏电流过大，导致电池片短路。
发明内容
本发明所要解决的技术问题是：如何避免在丝网印刷工序中造成的硅片边缘漏电问题。
本发明所采用的技术方案是：一种防边缘漏电的晶硅电池，在晶硅电池的每片电池片的周侧有一层25-40μm的高温绝缘膜，该高温绝缘膜在1000摄氏度时具有稳定性。
一种防边缘漏电的晶硅电池制备方法，在电池片制备正负电极前在硅片的周侧制备一层25-40μm的高温绝缘膜，然后在制备正负电极。
在硅片的周侧制备高温绝缘膜的工艺步骤为
步骤一、将完成镀减反射膜PECVD工艺的多片硅片上下叠在一起形成整齐的长方体块状的硅片叠块；
步骤二、使用与硅片同样尺寸的平板材料将长方体状的硅片叠块最上一块硅片上表面和最下一片硅片的下表面覆盖并压紧；
步骤三、采用静电喷涂法、无气喷涂法或者空气辅助喷涂法的任意一种方法，将高温绝缘涂料涂覆在长方体状的硅片叠块的周侧，形成25-40μm的高温绝缘膜层；
步骤四、分开长方体状的硅片叠块，对每片硅片分别进行丝网印刷、烧结以及其它工艺（采用现有技术）完成电池片的制备。
高温绝缘涂料的制备方法为，将云母片和氧化铝粉按质量比1:2～3:7的比例混合后，溶于硅酸盐溶液中。
云母片为厚度0.1～1μm、粒径小于15μm的云母片，氧化铝粉粒径为1～20nm，硅酸盐溶液的浓度为0.0015～0.002mol/L。
本专利中对高温绝缘涂料中云母片和氧化铝粉与硅酸盐溶液的比例不做要求，因为不同的喷涂工艺需求不同，只需能够形成25-40μm的高温绝缘膜层即可。
本发明的有益效果是：本发明所设计的晶硅电池的电池片利用四周形成的耐高温绝缘膜杜绝了丝网印刷工序的金属浆料造成的边缘漏电，同时得益于更大的铝背场面积，提高了电池转换效率。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
一种防边缘漏电的晶硅电池，在晶硅电池的每片电池片的周侧有一层25-40μm的高温绝缘膜，该高温绝缘膜在1000摄氏度时具有稳定性。防边缘漏电的晶硅电池片至上而下可以看成是由正电极层、硅基质层、铝背电极层构成，在硅基质层的周侧包裹有一层25-40μm的高温绝缘膜，高温绝缘膜的高度与硅基质层的厚度相同，能够将电池边缘保护起来，避免印刷过程中浆料电池边缘的污染。铝背电极层与所述的硅基质层的边缘完全重合，两者之间不存在任何间隙，提高了铝背场的钝化效果。
本实施例通过以下的方法将将耐高温超过1000℃的高温绝缘膜4涂覆在电池片四周的边缘，具体的实施过程如下：首先将完成PECVD工序的400片电池片上下完全重叠，同时用同尺寸的保护片覆盖与重叠的电池片的最上面和最下端进行保护，压紧，之后将用于制造高温绝缘膜的涂料采用静电喷涂法、无气喷涂法或者空气辅助喷涂法的任意一种方法涂覆在硅片四周的边缘，最后放置在通热风的环境中在40-60℃的环境下，使得涂料快速烘干固化得到所需要的膜厚为25-40μm的高温绝缘膜。
为了能够使高温绝缘膜与电池片边缘的侧壁紧密相连，所使用的高温绝缘膜涂料包括以下组份：厚度为0.1～1μm、粒径小于15μm的云母片，粒径为1～20nm的氧化铝粉和浓度在0.0015～0.002mol/L之间的硅酸盐溶液，通过将云母片和氧化铝粉充分按质量比1:2～3:7的比例充分混合后，溶于硅酸盐溶液中，在强力搅拌机的作用下充分混合，得到所需的高温绝缘涂料。
使用本发明所述的制备方法制备的电池片由漏电造成的不良率降低了20-50%，同时通过将每片电池片的铝背场的面积增加350-400mm2，将太阳能电池的转换效率提高了0.05-0.10%。
Claims (5)
1.一种防边缘漏电的晶硅电池，其特征在于：在晶硅电池的每片电池片的周侧有一层25-40μm的高温绝缘膜，该高温绝缘膜在1000摄氏度时具有稳定性。
2.一种权利要求1所述的防边缘漏电的晶硅电池制备方法，其特征在于：在电池片制备正负电极前在硅片的周侧制备一层25-40μm的高温绝缘膜，然后在制备正负电极。
3.根据权利要求2所述的防边缘漏电的晶硅电池制备方法，其特征在于：在硅片的周侧制备高温绝缘膜的工艺步骤为
步骤一、将完成镀减反射膜PECVD工艺的多片硅片上下叠在一起形成整齐的长方体块状的硅片叠块；
步骤二、使用与硅片同样尺寸的平板材料将长方体状的硅片叠块最上一块硅片上表面和最下一片硅片的下表面覆盖并压紧；
步骤三、采用静电喷涂法、无气喷涂法或者空气辅助喷涂法的任意一种方法，将高温绝缘涂料涂覆在长方体状的硅片叠块的周侧，形成25-40μm的高温绝缘膜层；
步骤四、分开长方体状的硅片叠块，对每片硅片分别进行丝网印刷、烧结以及其它工艺完成电池片的制备。
4.根据权利要求3所述的防边缘漏电的晶硅电池制备方法，其特征在于：高温绝缘涂料的制备方法为，将云母片和氧化铝粉按质量比1:2～3:7的比例混合后，溶于硅酸盐溶液中。
5.根据权利要求4所述的防边缘漏电的晶硅电池制备方法，其特征在于：云母片为厚度0.1～1μm、粒径小于15μm的云母片，氧化铝粉粒径为1～20nm，硅酸盐溶液的浓度为0.0015～0.002mol/L。
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