CN112201571A - Method and system for forming ohmic contacts on silicon carbide substrates - Google Patents
Method and system for forming ohmic contacts on silicon carbide substrates Download PDFInfo
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- CN112201571A CN112201571A CN202011193115.9A CN202011193115A CN112201571A CN 112201571 A CN112201571 A CN 112201571A CN 202011193115 A CN202011193115 A CN 202011193115A CN 112201571 A CN112201571 A CN 112201571A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000002086 nanomaterial Substances 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 238000000576 coating method Methods 0.000 claims abstract description 27
- 238000001035 drying Methods 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000004913 activation Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 239000013110 organic ligand Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- Crystallography & Structural Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a method and a system for forming ohmic contact on a silicon carbide substrate, wherein the system comprises an ultrafast laser module, a nano ink printing module, a long-pulse width nanosecond ultraviolet laser module and a mechanical platform; the mechanical platform is used for bearing the silicon carbide substrate; the ultrafast laser module is arranged above the mechanical platform and used for forming a micro-nano structure on the silicon carbide substrate; the nano ink printing module is arranged above the mechanical platform and is used for coating a layer of nano ink of metallic nickel on the micro-nano structure area on the surface of the silicon carbide; the long pulse width nanosecond ultraviolet laser module is arranged above the mechanical platform and used for forming a continuous metal nickel coating on the silicon carbide substrate coated with a layer of metal nickel nano ink. The invention has the beneficial effects that: and forming a micro-nano structure with a huge contact surface through an ultrafast laser module, coating nano ink of metallic nickel on the micro-nano structure, and finally carrying out long-pulse-width ultraviolet laser irradiation to obtain ohmic contact.
Description
Technical Field
The present invention relates to a method and system for forming an ohmic contact, and more particularly, to a method and system for forming an ohmic contact on a silicon carbide substrate.
Background
The silicon carbide belongs to III-VI broadband semiconductor materials and is mainly used for preparing power devices. In the fabrication of power devices, an important step is the formation of metal electrodes on silicon carbide substrates. At present, the main metal electrode material is metal nickel, and the traditional electrode preparation method is to form a metal nickel layer on silicon carbide by adopting a vacuum evaporation method, and then to directly form ohmic contact between the metal nickel and the silicon carbide by a post-treatment method (pulse laser radiation or ion implantation). Silicon carbide has a covalent bond structure, and thus has strong chemical stability and physical stability (melting point-2730 ℃). If an ohmic contact is formed between silicon carbide and metallic nickel, nickel atoms are required to be effectively and uniformly doped into the silicon carbide structure, but the current physical evaporation and direct doping technologies have the problems of high cost and limited controllability.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a method and system for forming ohmic contacts on a silicon carbide substrate that is simpler and more efficient is provided.
In order to solve the technical problems, the invention adopts the technical scheme that: a method of forming an ohmic contact on a silicon carbide substrate, comprising the steps of,
s10, focusing a picosecond laser or a femtosecond laser on the surface of the silicon carbide substrate, and forming a micro-nano structure by controlling the energy of the laser and the size of a light spot;
s20, coating a layer of metallic nickel nano ink on the micro-nano structure area on the surface of the silicon carbide by using a printing method, and then removing the solvent by drying;
s30, irradiating the nano ink coating of the metal nickel in the micro-nano structure area on the surface of the silicon carbide by using long-pulse-width ultraviolet laser, sintering the nano particles under the protection of inert gas to form a continuous metal nickel coating, and forming nickel doping in the micro-nano structure interface area of the metal nickel and the silicon carbide.
Further, the pulse width of the femtosecond laser is 250-950 fs; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm.
Further, the pulse width of the picosecond laser is less than 15 ps; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm.
Furthermore, the pulse width of the long-pulse width ultraviolet laser is more than 10ns, and the wavelength is 355nm or 266 nm.
The present invention also provides a system for forming an ohmic contact on a silicon carbide substrate, comprising,
the system comprises an ultrafast laser module, a nano ink printing module, a long-pulse-width nanosecond ultraviolet laser module and a mechanical platform;
the mechanical platform is used for bearing the silicon carbide substrate;
the ultrafast laser module is arranged above the mechanical platform and used for forming a micro-nano structure on the silicon carbide substrate;
the nano ink printing module is arranged above the mechanical platform and is used for coating a layer of nano ink of metallic nickel on the micro-nano structure area on the surface of the silicon carbide;
the long pulse width nanosecond ultraviolet laser module is arranged above the mechanical platform and used for forming a continuous metal nickel coating on the silicon carbide substrate coated with a layer of metal nickel nano ink.
Furthermore, the ultrafast laser module is used for generating femtosecond laser or picosecond laser, and the pulse width of the femtosecond laser is 250-950 fs; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm; the pulse width of picosecond laser is less than 15ps, the wavelength is 1030-, 1064nm, 515-, 532nm and 343-, 355 nm.
Furthermore, the long pulse width nanosecond ultraviolet laser module is used for generating long pulse width ultraviolet laser, the pulse width of the long pulse width ultraviolet laser is larger than 10ns, and the wavelength of the long pulse width ultraviolet laser is 355nm or 266 nm.
Furthermore, ultrafast laser module is including the ultrafast laser, the first expander of expanding, first speculum, the first mirror that shakes and the first field lens that arrange in proper order.
Furthermore, the long pulse width nanosecond ultraviolet laser module comprises a long pulse width nanosecond ultraviolet laser, a second beam expander, a second reflecting mirror, a second vibrating mirror and a second field lens which are sequentially arranged.
Furthermore, the nano ink printing module comprises an ink containing tank, an ink printing nozzle and an ink guiding device.
The invention has the beneficial effects that:
in a first aspect: in the method for forming ohmic contact on the silicon carbide substrate, picosecond laser or femtosecond laser is focused on the surface of the silicon carbide substrate to form a micro-nano structure, so that a huge contact surface is formed, the activation of silicon carbide is increased, and meanwhile, the heat influence of the femtosecond laser on a non-processing area is small; then coating a layer of metallic nickel nano ink on a micro-nano structure area on the surface of the silicon carbide, and then removing the solvent by drying, wherein the metallic nickel nano particles are high-activity particles and are easy to combine with oxygen for combustion in air, and the metallic nickel nano ink is stable under the protection of an organic ligand and can form a stable metal layer by a printing technology and an additional sintering technology; and then, irradiating the nano ink of the metal nickel in the micro-nano structure area on the surface of the silicon carbide by using long-pulse-width ultraviolet laser to form a continuous metal nickel coating, wherein the process can be used for efficiently manufacturing ohmic contact with higher quality.
In a second aspect: in a system for forming ohmic contact on a silicon carbide substrate, a femtosecond laser or a picosecond laser is generated by an ultrafast laser module and focused on the surface of the silicon carbide substrate to form a micro-nano structure, so that a huge contact surface is formed, the activation of silicon carbide is increased, and meanwhile, the heat influence of the femtosecond laser on a non-processing area is small; then coating a layer of metallic nickel nano ink on a micro-nano structure area on the surface of the silicon carbide through a nano ink printing module, and then removing a solvent through drying, wherein the metallic nickel nano particles are high-activity particles and are easy to combine with oxygen for combustion in air, and the metallic nickel nano ink is stable under the protection of an organic ligand and can form a stable metal layer through a printing technology and an additional sintering technology; and then, the long pulse width nanosecond ultraviolet laser module is used for generating long pulse width nanosecond ultraviolet laser, and the long pulse width nanosecond ultraviolet laser irradiates the nano ink of the metal nickel in the micro-nano structure area on the surface of the silicon carbide to form a continuous metal nickel coating.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the mechanisms shown in the drawings without creative efforts.
FIG. 1 is a diagram illustrating the effect of ultrafast laser processing according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating the effect of the nano-ink coating according to the embodiment of the present invention;
FIG. 3 is a diagram illustrating the effect of the long pulse width UV laser processing according to the embodiment of the present invention;
FIG. 4 is a schematic view of a system for forming an ohmic contact on a silicon carbide substrate in accordance with an embodiment of the present invention;
the system comprises an ultra-fast laser 11, a first beam expander 12, a first reflector 13, a first vibrating mirror 14 and a first field lens 15; 21-ink holding tank, 22-ink printing nozzle; 31-a long pulse width nanosecond ultraviolet laser, 32-a second beam expander, 33-a second reflecting mirror, 34-a second vibrating mirror and 35-a second field lens; 41-silicon carbide substrate, 42-mechanical platform.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the description of the invention relating to "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying any relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The first embodiment of the invention is: a method of forming an ohmic contact on a silicon carbide substrate, comprising the steps of,
step S10, as shown in FIG. 1, a picosecond laser or a femtosecond laser is focused on the surface of the silicon carbide substrate, and a micro-nano structure is formed by controlling the energy of the laser and the size of a light spot;
s20, as shown in figure 2, coating a layer of metallic nickel nano ink on the micro-nano structure area on the surface of the silicon carbide by using a printing method, and then removing the solvent by drying;
s30, as shown in fig. 3, irradiating the nano ink coating of the metallic nickel in the micro-nano structure area on the surface of the silicon carbide with long pulse width ultraviolet laser, sintering the nano particles under the protection of inert gas to form a continuous metallic nickel coating, and forming nickel doping in the micro-nano structure interface area of the metallic nickel and the silicon carbide.
Wherein, the pulse width of the femtosecond laser is 250-950fs, the wavelength is 1030-1064nm, 515-532nm, 343-355 nm.
Wherein, the pulse width of picosecond laser is less than 15ps, the wavelength is 1030-, 1064nm, 515-, 532nm, 343-, 355 nm.
Wherein, the pulse width of the long-pulse width ultraviolet laser is more than 10ns, and the wavelength is 355nm or 266 nm.
In the embodiment, a picosecond laser or a femtosecond laser is focused on the surface of the silicon carbide substrate to form a micro-nano structure, so that a huge contact surface is formed, the activation of silicon carbide is increased, and meanwhile, the heat influence of the femtosecond laser on a non-processing area is small; then coating a layer of metallic nickel nano ink on a micro-nano structure area on the surface of the silicon carbide, and then removing the solvent by drying, wherein the metallic nickel nano particles are high-activity particles and are easy to combine with oxygen for combustion in air, and the metallic nickel nano ink is stable under the protection of an organic ligand and can form a stable metal layer by a printing technology and an additional sintering technology; and then, irradiating the nano ink of the metal nickel in the micro-nano structure area on the surface of the silicon carbide by using long-pulse-width ultraviolet laser to form a continuous metal nickel coating, wherein the process can be used for efficiently manufacturing ohmic contact with higher quality.
As shown in fig. 4, a second embodiment of the invention is a system for forming an ohmic contact on a silicon carbide substrate, comprising,
the system comprises an ultrafast laser module, a nano ink printing module, a long-pulse-width nanosecond ultraviolet laser module and a mechanical platform;
the mechanical platform 42 is used for bearing the silicon carbide substrate 41;
the ultrafast laser module is arranged above the mechanical platform 42 and used for forming a micro-nano structure on the silicon carbide substrate 41;
the nano ink printing module is arranged above the mechanical platform 42 and is used for coating a layer of nano ink of metallic nickel on the micro-nano structure area on the surface of the silicon carbide;
the long pulse width nanosecond ultraviolet laser module is arranged above the mechanical platform 42 and used for forming a continuous metal nickel coating on the silicon carbide substrate coated with a layer of metal nickel nano ink.
Wherein, the ultrafast laser module is used for generating femtosecond laser or picosecond laser, the pulse width of the femtosecond laser is 250-950fs, the wavelength is 1030-1064nm, 515-532nm and 343-355 nm; the pulse width of picosecond laser is less than 15ps, the wavelength is 1030-, 1064nm, 515-, 532nm and 343-, 355 nm.
The long pulse width nanosecond ultraviolet laser module is used for generating long pulse width ultraviolet laser, the pulse width of the long pulse width ultraviolet laser is larger than 10ns, and the wavelength of the long pulse width ultraviolet laser is 355nm or 266 nm.
The ultrafast laser module comprises an ultrafast laser 11, a first beam expander 12, a first reflector 13, a first galvanometer 14 and a first field lens 15 which are sequentially arranged.
The long pulse width nanosecond ultraviolet laser module comprises a long pulse width nanosecond ultraviolet laser 31, a second beam expander 32, a second reflecting mirror 33, a second vibrating mirror 34 and a second field lens 35 which are sequentially arranged.
The nano ink printing module comprises an ink containing tank 21, an ink printing nozzle 22 and an ink guiding device.
In the embodiment, the ultrafast laser module is used for generating femtosecond laser or picosecond laser to focus on the surface of the silicon carbide substrate to form a micro-nano structure, so that a huge contact surface is formed, the activation of silicon carbide is increased, and meanwhile, the heat influence of the femtosecond laser on a non-processing area is small; then coating a layer of metallic nickel nano ink on a micro-nano structure area on the surface of the silicon carbide through a nano ink printing module, and then removing a solvent through drying, wherein the metallic nickel nano particles are high-activity particles and are easy to combine with oxygen for combustion in air, and the metallic nickel nano ink is stable under the protection of an organic ligand and can form a stable metal layer through a printing technology and an additional sintering technology; and then, the long pulse width nanosecond ultraviolet laser module is used for generating long pulse width nanosecond ultraviolet laser, and the long pulse width nanosecond ultraviolet laser irradiates the nano ink of the metal nickel in the micro-nano structure area on the surface of the silicon carbide to form a continuous metal nickel coating.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A method of forming an ohmic contact on a silicon carbide substrate, comprising: comprises the following steps of (a) carrying out,
s10, focusing a picosecond laser or a femtosecond laser on the surface of the silicon carbide substrate, and forming a micro-nano structure by controlling the energy of the laser and the size of a light spot;
s20, coating a layer of metallic nickel nano ink on the micro-nano structure area on the surface of the silicon carbide by using a printing method, and then removing the solvent by drying;
s30, irradiating the nano ink coating of the metal nickel in the micro-nano structure area on the surface of the silicon carbide by using long-pulse-width ultraviolet laser, sintering the nano particles under the protection of inert gas to form a continuous metal nickel coating, and forming nickel doping in the micro-nano structure interface area of the metal nickel and the silicon carbide.
2. The method of forming an ohmic contact on a silicon carbide substrate of claim 1, wherein: the pulse width of the femtosecond laser is 250-950 fs; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm.
3. The method of forming an ohmic contact on a silicon carbide substrate of claim 2, wherein: the pulse width of the picosecond laser is less than 15 ps; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm.
4. The method of forming an ohmic contact on a silicon carbide substrate of claim 3, wherein: the pulse width of the long pulse width ultraviolet laser is more than 10ns, and the wavelength is 355nm or 266 nm.
5. A system for forming an ohmic contact on a silicon carbide substrate, comprising: comprises the steps of (a) preparing a mixture of a plurality of raw materials,
the system comprises an ultrafast laser module, a nano ink printing module, a long-pulse-width nanosecond ultraviolet laser module and a mechanical platform;
the mechanical platform is used for bearing the silicon carbide substrate;
the ultrafast laser module is arranged above the mechanical platform and used for forming a micro-nano structure on the silicon carbide substrate;
the nano ink printing module is arranged above the mechanical platform and is used for coating a layer of nano ink of metallic nickel on the micro-nano structure area on the surface of the silicon carbide;
the long pulse width nanosecond ultraviolet laser module is arranged above the mechanical platform and used for forming a continuous metal nickel coating on the silicon carbide substrate coated with a layer of metal nickel nano ink.
6. The system for forming an ohmic contact on a silicon carbide substrate of claim 5, wherein: the ultrafast laser module is used for generating femtosecond laser or picosecond laser, and the pulse width of the femtosecond laser is 250-950 fs; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm; the pulse width of the picosecond laser is less than 15 ps; the wavelength is 1030-, 1064-, 515-, 532-, 343-, 355-nm.
7. The system for forming an ohmic contact on a silicon carbide substrate of claim 6, wherein: the long pulse width nanosecond ultraviolet laser module is used for generating long pulse width ultraviolet laser, the pulse width of the long pulse width ultraviolet laser is larger than 10ns, and the wavelength of the long pulse width ultraviolet laser is 355nm or 266 nm.
8. The system for forming an ohmic contact on a silicon carbide substrate of claim 7, wherein: the ultrafast laser module comprises an ultrafast laser, a first beam expander, a first reflector, a first galvanometer and a first field lens which are sequentially arranged.
9. The system for forming an ohmic contact on a silicon carbide substrate of claim 8, wherein: the long pulse width nanosecond ultraviolet laser module comprises a long pulse width nanosecond ultraviolet laser, a second beam expander, a second reflecting mirror, a second vibrating mirror and a second field lens which are sequentially arranged.
10. The system for forming an ohmic contact on a silicon carbide substrate of claim 9, wherein: the nano ink printing module comprises an ink containing tank, an ink printing nozzle and an ink guiding device.
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