CN112198581A - Ultralow-reflection infrared filter and manufacturing process thereof - Google Patents
Ultralow-reflection infrared filter and manufacturing process thereof Download PDFInfo
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- CN112198581A CN112198581A CN202011124022.0A CN202011124022A CN112198581A CN 112198581 A CN112198581 A CN 112198581A CN 202011124022 A CN202011124022 A CN 202011124022A CN 112198581 A CN112198581 A CN 112198581A
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- glass substrate
- film layer
- magnesium fluoride
- material layers
- refractive
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical group [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 27
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 27
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 21
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 238000005566 electron beam evaporation Methods 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 10
- 230000004313 glare Effects 0.000 abstract description 7
- 238000002834 transmittance Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The embodiment of the invention discloses an ultra-low reflection infrared filter and a manufacturing process thereof, which are used for solving the problems that the width of a coating material belt of the existing filter is small, the reflectivity is high in 380nm and 700nm vicinity of a visible light region, and the stray light and the glare of a visible light photo module cannot be improved. The glass substrate, the bottom film layer arranged on the glass substrate and the composite film layer arranged on the bottom film layer are arranged; the bottom film layer is a magnesium fluoride material layer; the composite film layer is made of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked, the high-refractive-index material layers are tantalum pentoxide material layers, and the low refractive indexes are silicon dioxide material layers. In the embodiment, according to the material characteristics, the transmittance of the tantalum pentoxide in the 380-420nm waveband is superior to that of the titanium pentoxide, so that the reflectivity of the optical filter can be well reduced, and the problems of stray light, glare and the like of the optical filter can be effectively solved.
Description
Technical Field
The invention relates to the technical field of optical filter manufacturing, in particular to an ultra-low reflection infrared optical filter and a manufacturing process thereof.
Background
At present, the optical filter is mainly applied to the fields of micro cameras such as mobile phones, tablet computers and the like, solves the problems of veiling glare, Flare and color deviation in the imaging process, and requires the maximum value of the reflectivity of the AR surface of the coating film to be less than 0.5 percent near the visible light wave band of 400-700 nm; the coated IR surface requires the transmittance of more than 92% of the mean value under the conditions of 0-degree incidence and 30-degree incidence within the visible light 430-565nm waveband, the coated IR surface requires the maximum values of 0-degree incidence and 30-degree incidence reflectances to be less than 2% within the visible light 430-660nm waveband, other unnecessary wavebands are required to be cut off, and the lower the transmittance required by the cut-off section is, the better the transmittance is.
The existing infrared filter uses high and low-emissivity materials to achieve the effect by alternately stacking different film layers, and generally uses high-refractive-index materials (TI3O5) and low-refractive-index materials (SiO2 and MgF 2). However, the width of the coating material of the existing optical filter is small, the reflectivity is high in the visible light region of 380nm and around 700nm, and the problems of stray light and Flare existing in the optical filter cannot be improved well.
Therefore, in order to solve the above-mentioned technical problems, it is an important subject of research by those skilled in the art to find an ultra-low reflection infrared filter and a manufacturing process thereof.
Disclosure of Invention
The embodiment of the invention discloses an ultra-low reflection infrared filter and a manufacturing process thereof, which are used for solving the problems that the width of a coating material belt of the existing filter is small, the reflectivity is high in 380nm and 700nm vicinity of a visible light region, and the stray light and the glare of a visible light photo module cannot be improved.
The embodiment of the invention provides an ultralow-reflection infrared filter, which comprises a glass substrate, a bottom film layer arranged on the glass substrate and a composite film layer arranged on the bottom film layer;
the bottom film layer is a magnesium fluoride material layer;
the composite film layer is made of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked, the high-refractive-index material layers are tantalum pentoxide material layers, and the low refractive indexes are silicon dioxide material layers.
Optionally, the thickness of the base film layer is 30-80 nm.
The embodiment of the invention provides a manufacturing process of an ultra-low reflection infrared filter, which comprises the following steps:
s1, preprocessing the glass substrate;
s2, placing the glass substrate pretreated in the step S1 into an electron beam evaporation working chamber, vacuumizing the electron beam evaporation working chamber, heating the glass substrate to a preset temperature, evaporating the magnesium fluoride material by using an electron beam, uniformly depositing the magnesium fluoride material on the glass substrate in a vacuum environment, and growing a magnesium fluoride material layer;
s3, continuously filling oxygen into the electron beam evaporation working chamber, adding an ion source for assistance in the process of growing the composite film layer, alternately evaporating a tantalum pentoxide material and a silicon dioxide material on the surface of the magnesium fluoride material layer by utilizing an electron beam, alternately evaporating the tantalum pentoxide material and the silicon dioxide material, alternately depositing on the surface of the magnesium fluoride material layer uniformly in an oxygen filling environment, and alternately stacking and growing the tantalum pentoxide material layer and the silicon dioxide material layer to form the composite film layer;
and S4, finishing the manufacture of the ultra-low reflection infrared filter.
Optionally, the step S1 specifically includes:
s101, selecting materials: selecting a glass substrate as a substrate of the optical filter, and grinding, polishing and cutting the glass substrate to form a regular shape;
s102, cleaning: and (4) carrying out ultrasonic cleaning on the glass substrate obtained in the step (S101), and then drying the glass substrate by using a centrifugal drying machine.
Optionally, in step S2, the electron beam evaporation chamber is evacuated to less than or equal to 0.001Pa, and no oxygen is charged and no ion source is added for assistance in the process of growing the magnesium fluoride material layer.
Optionally, in the step S2, the glass substrate is heated to 120 ℃ to 180 ℃.
Optionally, the steps S3 and S4 further include:
step a, checking parameters: inspecting the spectral spectrum and the HAZE value of the glass substrate after the step S3;
step b, cleaning again: ultrasonically cleaning the glass substrate inspected in the step Sa again, and then spin-drying the glass substrate by using a centrifugal spin-drying machine;
step c, appearance inspection: the appearance and warp condition of the glass substrate inspected in step Sb were inspected.
According to the technical scheme, the embodiment of the invention has the following advantages:
the embodiment of the invention provides an ultra-low reflection infrared filter and a manufacturing process thereof, wherein the filter comprises a glass substrate, a bottom film layer arranged on the glass substrate and a composite film layer arranged on the bottom film layer; the bottom film layer is a magnesium fluoride material layer; the composite film layer is made of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked, the high-refractive-index material layers are tantalum pentoxide material layers, and the low refractive indexes are silicon dioxide material layers. In the embodiment, according to the material characteristics, the transmittance of the tantalum pentoxide in the 380-420nm waveband is superior to that of the titanium pentoxide, so that the reflectivity of the optical filter can be well reduced, and the problems of stray light, glare and the like existing in the visible light photo module can be effectively solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic diagram of an ultra-low reflection infrared filter;
FIG. 2 is a flow chart of a process for fabricating an ultra-low reflection infrared filter;
illustration of the drawings: a glass substrate 1; a magnesium fluoride material layer 2; a tantalum pentoxide material layer 3; a layer of silicon dioxide material 4.
Detailed Description
The embodiment of the invention discloses an ultra-low reflection infrared filter and a manufacturing process thereof, which are used for solving the problems that the width of a coating material belt of the existing filter is small, the reflectivity is high in 380nm and 700nm vicinity of a visible light region, and the stray light and the glare of a visible light photo module cannot be improved.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1, an ultra-low reflection infrared filter according to an embodiment of the present invention includes:
the glass substrate comprises a glass substrate 1, an underlayer film layer arranged on the glass substrate 1 and a composite film layer arranged on the underlayer film layer;
the bottom film layer is a magnesium fluoride material layer 2;
the composite film layer is made of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked, the high-refractive-index material layers are tantalum pentoxide material layers 3, and the low refractive indexes are silicon dioxide material layers 4.
It should be noted that the high refractive index material layers and the low refractive index material layers are alternately arranged from bottom to top, and the number of the high refractive index material layers and the low refractive index material layers is not limited in this embodiment.
In the embodiment, according to the material characteristics, the transmittance of the tantalum pentoxide in the 380-420nm waveband is superior to that of the titanium pentoxide, so that the reflectivity of the optical filter can be well reduced, and the problems of stray light, glare and the like existing in the visible light photo module can be effectively solved.
Further, the thickness of the bottom film layer is 30-80 nm.
Example two
Referring to fig. 1 to 2, a manufacturing process of an ultra-low reflection infrared filter according to an embodiment of the present invention includes the following steps:
s1, preprocessing the glass substrate 1;
s2, placing the glass substrate 1 pretreated in the step S1 into an electron beam evaporation working chamber, vacuumizing the electron beam evaporation working chamber, heating the glass substrate 1 to a preset temperature, evaporating the magnesium fluoride material by using an electron beam, evaporating the magnesium fluoride material, and uniformly depositing the magnesium fluoride material on the glass substrate 1 in a vacuum environment to grow a magnesium fluoride material layer 2;
s3, continuously filling oxygen into the electron beam evaporation working chamber, adding an ion source for assistance in the process of growing the composite film, alternately evaporating a tantalum pentoxide material and a silicon dioxide material on the surface of the magnesium fluoride material layer 2 by using electron beams, alternately evaporating the tantalum pentoxide material and the silicon dioxide material, uniformly and alternately depositing on the surface of the magnesium fluoride material layer 2 in an oxygen filling environment, and alternately stacking and growing into a tantalum pentoxide material layer 3 and a silicon dioxide material layer 4 to form the composite film;
and S4, finishing the manufacture of the ultra-low reflection infrared filter.
It should be noted that when the magnesium fluoride is evaporated by the electron beam, oxygen is not filled in the electron beam evaporation working chamber, and oxygen needs to be stably filled in the process of evaporating tantalum pentoxide by the electron beam, so that the refractive index of the material is ensured to be stable, and the problem of instability caused by the influence of the filling flow of oxygen on the refractive index of the titanium pentoxide is solved.
It should be noted that the above process uses Optrun TFC-1550 vacuum coating equipment, ion source assistance, and 270 degree electron gun.
Further, the step S1 specifically includes:
s101, selecting materials: selecting a glass substrate 1 as a substrate of the optical filter, and grinding, polishing and cutting the substrate to form a regular shape;
s102, cleaning: and (4) carrying out ultrasonic cleaning on the glass substrate 1 obtained in the step (S101), and then drying the glass substrate by using a centrifugal drying machine.
Further, in step S2, the electron beam evaporation chamber is evacuated to less than or equal to 0.001Pa, and no oxygen is charged and no ion source is added for assistance in the process of growing the magnesium fluoride material layer.
Further, in the step S2, the glass substrate 1 is heated to 120 to 180 ℃.
Further, the steps S3 and S4 further include:
step a, checking parameters: the spectral spectrum and the HAZE value of the glass substrate 1 after the step S3 are inspected;
step b, cleaning again: ultrasonically cleaning the glass substrate 1 inspected in the step Sa again, and then spin-drying the glass substrate 1 by using a centrifugal spin-dryer;
step c, appearance inspection: the appearance and warp condition of the glass substrate 1 inspected in step Sb were inspected.
The process in the embodiment has the advantages that:
1. the tantalum pentoxide material has stable components, maintains stable oxygen charging amount in the film coating process, is convenient to operate, stabilizes the yield, has good mass production performance, and has the yield of over 80 percent
2. The tantalum pentoxide material has the characteristics that the transmissivity near 380-420nm is superior to that of the existing titanium pentoxide, the reflectivity bandwidth is wider, red light and purple light stray light are better reduced, and the imaging of the camera module is effectively improved.
3. The magnesium fluoride material layer 2 is used as a bottom film layer, so that the overall reflectivity of the optical filter is improved, and the firmness of the film layer is also improved.
While the ultra-low reflection infrared filter and the fabrication process thereof provided by the present invention have been described in detail, those skilled in the art will appreciate that the various embodiments and applications of the filter can be modified according to the spirit of the present invention.
Claims (7)
1. An ultra-low reflection infrared filter is characterized by comprising a glass substrate, a bottom film layer arranged on the glass substrate and a composite film layer arranged on the bottom film layer;
the bottom film layer is a magnesium fluoride material layer;
the composite film layer is made of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked, the high-refractive-index material layers are tantalum pentoxide material layers, and the low refractive indexes are silicon dioxide material layers.
2. The ultra-low reflection infrared filter of claim 1 wherein the thickness of the primer layer is 30-80 nm.
3. A manufacturing process of an ultra-low reflection infrared filter is characterized by comprising the following steps:
s1, preprocessing the glass substrate;
s2, placing the glass substrate pretreated in the step S1 into an electron beam evaporation working chamber, vacuumizing the electron beam evaporation working chamber, heating the glass substrate to a preset temperature, evaporating the magnesium fluoride material by using an electron beam, uniformly depositing the magnesium fluoride material on the glass substrate in a vacuum environment, and growing a magnesium fluoride material layer;
s3, continuously filling oxygen into the electron beam evaporation working chamber, adding an ion source for assistance in the process of growing the composite film layer, alternately evaporating a tantalum pentoxide material and a silicon dioxide material on the surface of the magnesium fluoride material layer by utilizing an electron beam, alternately evaporating the tantalum pentoxide material and the silicon dioxide material, alternately depositing on the surface of the magnesium fluoride material layer uniformly in an oxygen filling environment, and alternately stacking and growing the tantalum pentoxide material layer and the silicon dioxide material layer to form the composite film layer;
and S4, finishing the manufacture of the ultra-low reflection infrared filter.
4. The process of claim 3, wherein the step S1 specifically includes:
s101, selecting materials: selecting a glass substrate as a substrate of the optical filter, and grinding, polishing and cutting the glass substrate to form a regular shape;
s102, cleaning: and (4) carrying out ultrasonic cleaning on the glass substrate obtained in the step (S101), and then drying the glass substrate by using a centrifugal drying machine.
5. The process of claim 3, wherein in step S2, the electron beam evaporation chamber is evacuated to a pressure less than or equal to 0.001Pa, and oxygen is not introduced and no ion source is added during the growth of the magnesium fluoride material layer.
6. The process of claim 3, wherein in step S2, the glass substrate is heated to 120-180 ℃.
7. The process of claim 3, further comprising steps S3 and S4 between:
step a, checking parameters: inspecting the spectral spectrum and the HAZE value of the glass substrate after the step S3;
step b, cleaning again: ultrasonically cleaning the glass substrate inspected in the step Sa again, and then spin-drying the glass substrate by using a centrifugal spin-drying machine;
step c, appearance inspection: the appearance and warp condition of the glass substrate inspected in step Sb were inspected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011124022.0A CN112198581A (en) | 2020-10-20 | 2020-10-20 | Ultralow-reflection infrared filter and manufacturing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011124022.0A CN112198581A (en) | 2020-10-20 | 2020-10-20 | Ultralow-reflection infrared filter and manufacturing process thereof |
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| CN112198581A true CN112198581A (en) | 2021-01-08 |
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Cited By (1)
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| CN113514911A (en) * | 2021-07-27 | 2021-10-19 | 北京京东方技术开发有限公司 | Optical structure and preparation method thereof |
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