CN112198168A - Semiconductor detection device and method - Google Patents
Semiconductor detection device and method Download PDFInfo
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- CN112198168A CN112198168A CN202011181995.8A CN202011181995A CN112198168A CN 112198168 A CN112198168 A CN 112198168A CN 202011181995 A CN202011181995 A CN 202011181995A CN 112198168 A CN112198168 A CN 112198168A
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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Abstract
The invention discloses a semiconductor detection device and a method, wherein the semiconductor detection device comprises: an image acquisition component; a displacement member: the displacement piece is arranged on one side of the image acquisition assembly; a visible light component; a near-infrared light component; the visible light assembly and the near infrared light assembly are arranged on the displacement piece in a sliding mode side by side. The displacement piece is arranged on one side of the image acquisition assembly, the visible light assembly and the near infrared light assembly are arranged on the displacement piece in a sliding mode side by side, and the visible light assembly and the near infrared light assembly are displaced on the displacement piece so that the selection of the visible light and the near infrared light can be switched, and the appearance detection and the internal detection of the object to be detected are achieved.
Description
Technical Field
The invention relates to the technical field of optical detection, in particular to a semiconductor detection device and a semiconductor detection method.
Background
Semiconductor refers to a material having a conductive property between a conductor and an insulator at normal temperature. Semiconductors are widely used in radio sets, televisions, and various electronic devices commonly used in daily life.
In the prior art, the semiconductor detection device generally includes an appearance detection device and an internal defect detection device, and when semiconductor detection is performed, different detection devices need to be replaced to separately detect internal defects and appearance defects of semiconductors, so that the detection complexity is increased.
Therefore, the prior art needs to be improved.
Disclosure of Invention
In order to solve the problem that the detection process is complex due to the fact that equipment needs to be replaced for detecting the inside and the outside of a semiconductor in the prior art, the invention provides a semiconductor detection device and a semiconductor detection method.
The invention is realized by the following technical scheme:
in one aspect, the present invention provides a semiconductor inspection apparatus comprising:
an image acquisition component;
a displacement member: the displacement piece is arranged on one side of the image acquisition assembly;
a visible light component;
a near-infrared light component;
the visible light assembly and the near infrared light assembly are arranged on the displacement piece in a sliding mode side by side.
The visible light assembly is used for collecting the appearance image of the object to be detected, the near infrared light assembly is used for collecting the internal image of the object to be detected, the displacement piece is arranged on one side of the image collection assembly, the visible light assembly and the near infrared light assembly are arranged on the displacement piece in a sliding mode side by side, and the visible light assembly and the near infrared light assembly are displaced on the displacement piece so as to be convenient for selecting visible light and near infrared light to be switched, and the appearance detection and the internal detection of the object to be detected are achieved.
In one embodiment of the invention, the visible light assembly comprises a visible light source and a first spectroscope; the near infrared light assembly comprises a near infrared light source and a second spectroscope, and the displacement piece is a sliding piece.
In one embodiment of the present invention, the first beam splitter and the second beam splitter are adjacently disposed at an interval, and the visible light source, the first beam splitter, the second beam splitter and the near visible light source are slidably disposed on the sliding member side by side in sequence.
The sliding part is provided with a first spectroscope, a second spectroscope and a near visible light source, the first spectroscope, the second spectroscope and the near visible light source are arranged on the sliding part in a sliding mode in sequence side by side, so that the visible light source, the first spectroscope, the second spectroscope and the near visible light source can be adjusted by which straight line slides back and forth, convenience and rapidness are achieved, the first spectroscope and the second spectroscope are arranged adjacently, the sliding distance of the visible light assembly and the near infrared light assembly in switching is the minimum, and the efficiency of no internal detection and no external detection to be detected is improved.
In one embodiment of the invention, the device further comprises a mounting part for mounting the object to be detected, and the mounting part is arranged on two sides of the sliding part opposite to the image acquisition assembly.
Through setting up the installed part for the installation is waited to detect the thing, makes it is more stable and fixed to wait to detect the position of thing in the process of surveying with adding, makes the testing result more accurate.
In one embodiment of the invention, the image acquisition assembly comprises a camera and a lens, wherein the lens is mounted on the camera, and a lens of the lens is plated with a high-transmittance film aiming at a near infrared wave band and a visible light wave band.
The lens of the lens is plated with a high-transmittance film aiming at a near infrared wave band and a visible light wave band, so that imaging is clearer.
In one embodiment of the present invention, the first beam splitter and the second beam splitter are cube beam splitters, one side surface of the first beam splitter and one side surface of the second beam splitter are disposed to face each other, and the sliding direction of the sliding member is perpendicular to the axial direction of the lens.
Through setting up first spectroscope and second spectroscope are cube type beam splitter, divide into the projection that has certain light intensity ratio and reflect two bundles of light with incident beam, just a side of first spectroscope with a side opposite surface of second spectroscope sets up, the slip direction of slider with the axial vertical of camera lens makes incident light can shine on the determinand and with the light reflection on the determinand refraction to the camera lens in and arrive and form like.
In one embodiment of the invention, the inclined surface of the first spectroscope is provided with a first semi-reflecting semi-permeable membrane for the visible light band, so that at least one surface of the first spectroscope facing the visible light source is provided with a first light band antireflection film for visible light; the inclined plane of the second spectroscope is provided with a second semi-reflecting and semi-transmitting film aiming at the near-infrared light wave band, so that at least one surface of the second spectroscope facing the near-infrared light source is provided with a second light wave band antireflection film for near-infrared light.
In one embodiment of the present invention, the height of the first beam splitter is greater than the height of the second beam splitter, and the difference between the heights of the first beam splitter and the second beam splitter is equal to the product of the ratio of the difference between the refractive index of visible light and the refractive index of near infrared light and the value of the refractive index minus 1 of the lens and the focal length of the lens, and then multiplied by 0.3.
Through setting up the height of first spectroscope is greater than the height of second spectroscope can be under the prerequisite that need not adjust camera lens and camera, directly switch first spectroscope with the second spectroscope obtains clear image.
In one embodiment of the present invention, the sliding member includes a first detection position and a second detection position, and when the sliding member slides to the first detection position, the image capturing assembly and the first spectroscope are arranged in a straight line; when the sliding piece slides to the second detection position, the image acquisition assembly and the second spectroscope are linearly arranged.
Through setting up first detection position and second and detecting the position for it is more accurate to form images, detects more accurately.
In one embodiment of the present invention, the sliding member includes a sliding rail and a sliding component disposed in the sliding rail, and the visible light source, the first beam splitter, the second beam splitter, and the near-visible light source are sequentially disposed on the sliding component side by side.
Through setting up the slide rail, make the slip of visible light source, first spectroscope, second spectroscope and nearly visible light source is steady controllable more.
In one embodiment of the present invention, the image capturing device further comprises a mounting plate, and the image capturing assembly and the sliding member are respectively disposed on the mounting plate.
Through setting up the mounting panel, and will image acquisition subassembly and slider are located respectively on the mounting panel for holistic mounting structure is more stable, and then improves and detects the precision.
In one embodiment of the invention, the mounting is a robotic arm.
Through setting up the installed part is the arm, makes but wait to detect the position automatically regulated of thing for it is more convenient nimble controllable to wait to detect of thing.
In another aspect, the present invention further provides a semiconductor inspection method, including:
acquiring first image information of a semiconductor to be detected;
switching the optical assembly to acquire second image information of the semiconductor to be detected;
and analyzing the first image information and the second image information to obtain a detection result of the semiconductor to be detected.
The invention has the beneficial effects that:
the visual light assembly and the near infrared light assembly are arranged on one side of the image acquisition assembly, and are arranged on the sliding piece in a sliding mode side by side so as to switch the selection of the visual light and the near infrared light, and the appearance detection and the internal detection of the object to be detected are realized.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor inspection apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a visible light assembly according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a near infrared light assembly according to an embodiment of the present invention;
fig. 4 is a flow chart of a semiconductor inspection method according to an embodiment of the present invention.
In the figure: 1. the device comprises an image acquisition assembly, 10, a camera, 11, a lens, 2, a sliding piece, 3, a visible light assembly, 30, a visible light source, 31, a first light splitter, 310, a first semi-reflecting and semi-transmitting film, 311, a first light wave band antireflection film, 4, a near infrared light assembly, 40, a near infrared light source, 41, a second light splitter, 410, a second semi-reflecting and semi-transmitting film, 411, a second light wave band antireflection film, 5 and a mounting piece.
Detailed Description
In order to make the objects, technical solutions and effects of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It should be noted that if directional indications (such as upper, lower, left, right, front and rear … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
Visible light is a part of the electromagnetic spectrum which can be perceived by human eyes, and the visible spectrum has no precise range; the frequency that general human eyes can perceive accurately is between 380-750THZ, wavelength 780-400nm, but some people can perceive the electromagnetic wave with the frequency of about 340-790THZ and the wavelength of about 880-380 nm.
The infrared spectrum is generally divided into three regions: near infrared region (0.7-2.5 μm), mid infrared region (2.5-25 μm) and far infrared region (25-1000 μm). Generally, the near infrared spectrum is generated by the frequency doubling, sum frequency of the molecules. Because the wavelength of the infrared light is longer than that of the visible light, the infrared light can be reflected by the materials such as the wafer and the like less than that of the visible light, so that the infrared light can penetrate through the materials such as the wafer and the like to achieve the effect of detecting the inside.
The spectroscope is a coated glass. One or more layers of thin films are coated on the surface of the optical glass, and after one beam of light is projected onto the coated glass, the beam of light is divided into two or more beams through reflection and refraction. The beam splitter is mainly used for splitting an incident beam into a projection beam and a reflection beam with a certain light intensity ratio. The beam splitter with fixed beam splitting ratio and the beam splitter with variable beam splitting ratio.
Various electronic devices, such as mobile phones, computers, televisions, air conditioners, and the like, which are common in daily life, all rely on the logic computation, storage, and sensing capabilities provided by various chips. The core of each chip is a chip, which is cut from wafers of various specifications. In order to prevent the chips with defects from flowing into the next packaging process, the optical detection equipment is used to identify the defects on the surface of the wafer, classify and mark the defects, and assist in sorting the chips.
In order to optimize the structure of a semiconductor detection optical system, the invention provides a semiconductor detection device and a semiconductor detection method, which reduce the detection time and improve the efficiency. Specific embodiments are described below:
in one aspect, the present invention provides a semiconductor inspection apparatus, see fig. 1, comprising: the device comprises an image acquisition assembly 1, a displacement member, a visible light assembly 3 and a near infrared light assembly 4; the displacement piece is arranged on one side of the image acquisition assembly 1; in this embodiment the displacement member is a slide 2, such as an electric/non-electric slide rail, a slide groove, or the like. In other embodiments of the present invention, the displacement member may be an electric telescopic device, a mechanical arm, or the like, and the present invention is not limited thereto. The visible light assembly 3 and the near infrared light assembly 4 are arranged on the sliding member 2 in a sliding manner. The visible light component 3 is used for collecting appearance images of the object to be detected, the near infrared light component 4 is used for collecting internal images of the object to be detected, the sliding component 2 is arranged on one side of the image collecting component 1, the visible light component 3 and the near infrared light component 4 are arranged on the sliding component 2 in a sliding mode side by side and pass through the sliding component 2, so that selection of visible light and near infrared light can be switched, and appearance detection and internal detection of the object to be detected are achieved.
Specifically, referring to fig. 1, the image capturing assembly 1 includes a camera 10 and a lens 11, the lens 11 is mounted on the camera 10, and a lens of the lens 11 is plated with a high-transmittance film for a near-infrared band and a visible light band, and the process can be completed by a lens 11 lens plating process in the prior art. The camera 10 is receptive to light beams covering the near infrared band and the visible band. The visible light assembly 3 and the near infrared light assembly 4 are reflected by an object to be detected to reach the lens 11, the lens 11 collects light beams on a receiving surface of the camera 10 to generate image information, and the image information received by the camera 10 is transmitted to a computer so as to respectively detect the outside and the inside of the object to be detected. Through setting up it passes through the membrane to plate the height to near-infrared wave band and visible light wave band on the lens of camera lens 11 for the penetrating strength of light is stronger, and camera lens 11 is stronger with the light beam gathering ability, makes the formation of image more clear.
On the basis of the above embodiment, with continued reference to fig. 2 and 3, the visible light assembly 3 includes a visible light source 30 and a first beam splitter 31; the near infrared light assembly 4 includes a near infrared light source 40 and a second beam splitter 41.
Specifically, the visible light source may be an RGB lamp bead capable of emitting visible light, a visible light lamp bead capable of emitting a single color, an LED lamp tube, or the like. The near-infrared light source can emit near-infrared light, such as lamp beads and lamp tubes, the invention is not particularly limited, and a plurality of light source lamp beads/lamp tubes are uniformly distributed, so that the uniformity of coaxial light beams is ensured, and the problems of unclear imaging and low quality caused by surfaces are avoided.
Specifically, referring to fig. 2 and 3, the first beam splitter 31 is a beam splitter matched with the visible light source 30, the second beam splitter 41 is a beam splitter matched with the near-infrared light source 40, and the first beam splitter 31 and the second beam splitter 41 are respectively a cubic beam splitter and a cubic beam splitter, and are formed by splicing two 45-degree right-angled triangular prisms. In this embodiment, the centers of the first beam splitter 31 and the second beam splitter 41 are located on the same straight line, one side surface of the first beam splitter 31 is adjacent to one side surface of the second beam splitter 41 and is disposed facing the one side surface, and the sliding direction of the sliding member 2 is perpendicular to the axial direction of the lens 11. In other embodiments of the present invention, the central positions of the first beam splitter 31 and the second beam splitter 41 may not be located on the same straight line, a side surface of the first beam splitter 31 may not be adjacent to a side surface of the second beam splitter 41, and the first beam splitter 31 and the second beam splitter 41 may be adjacent in edge and arranged facing each other, as long as the visible light source/near infrared light source can be arranged in such a manner that the visible light source/near infrared light source is split by the first beam splitter 31/the second beam splitter 41, reflected on the object to be detected, split by the first beam splitter 31/the second beam splitter 41, and enters the lens 11.
Further, referring to fig. 2 and 3, the inclined surface of the first beam splitter 31 is provided with a first semi-reflective semi-permeable membrane 310 for visible light bands, so that at least one surface of the first beam splitter 31 facing the visible light source 30 is provided with a first light band antireflection film 311 for visible light; the inclined plane of the second beam splitter 41 is provided with a second semi-reflective and semi-transparent film 410 for the near-infrared light band, so that at least one surface of the second beam splitter 41 facing the near-infrared light source 40 is provided with a second light band antireflection film 411 for the near-infrared light. The light beam emitted by the visible light source 30/the near infrared light source 40 is split on the inclined plane (the inclined plane is a semi-transparent plane after coating or special treatment) provided with the first semi-reflective semi-transparent film 310/the second semi-reflective semi-transparent film 410 to form a projection and reflection light beam which divides the incident light beam into two beams with a certain light intensity ratio, the reflection light beam is reflected to an object to be detected through the inclined plane, and the projection light beam penetrates through the inclined plane and is refracted to the opposite side of the incident light source. Since the wavelength of the near infrared light is longer than the wavelength of the visible light, the near infrared light can be reflected by the material such as the wafer less than the visible light, so that the visible light is reflected back to the first beam splitter 31 outside the wafer, and is split into the projection light and the reflection light again by the inclined plane of the first beam splitter 31, wherein the reflection light is reflected back along the incident light path of the incident light, and the projection light passes through the inclined plane of the first beam splitter 31 to reach the lens 11. The near infrared light can penetrate through materials such as wafers and the like, and is reflected back through internal materials, so that the effect of detecting the inside is achieved in the same way.
In another embodiment of the present invention, the centers of the first beam splitter 31 and the second beam splitter 41 may not be located on the same straight line, and the present invention is not limited in particular to the case that the first beam splitter 31 and the second beam splitter 41 are cube beam splitters, so as to split an incident light beam into two projected and reflected light beams with a certain light intensity ratio, in this embodiment, the centers of the first beam splitter 31 and the second beam splitter 41 are located on the same straight line, one side surface of the first beam splitter 31 is adjacent to and faces one side surface of the second beam splitter 41, and the sliding direction of the sliding member 2 is perpendicular to the axial direction of the lens 11, so that the incident light can be irradiated onto the object to be measured, and the light reflected by the object to be measured is reflected into the lens 11 and then into the camera 10 to realize imaging.
Specifically, in this embodiment, the first spectroscope 31 is provided with the first optical band antireflection film 311 except for the inclined surface, so as to increase the light transmittance of the visible light and increase the light transmittance, and the second spectroscope 41 is provided with the first optical band antireflection film 311 except for the inclined surface, so as to increase the light transmittance of the visible light and increase the light transmittance, so that the incident light beam can better penetrate through the first spectroscope 31/the second spectroscope 41, thereby increasing the imaging accuracy of the camera 10 and further ensuring the detection accuracy.
On the basis of the above embodiment, referring to fig. 1, the height of the first beam splitter 31 is greater than the height of the second beam splitter 41, and the difference between the heights of the first beam splitter 31 and the second beam splitter 41 is equal to the product of the ratio of the difference between the refractive index of visible light and the refractive index of near infrared light and the value of the refractive index minus 1 of the lens 11 and the focal length of the lens 11 multiplied by 0.3. The concrete formula is as follows:
wherein Δ f is a difference between a focal length of the visible light and a focal length of the near-infrared light, f is a focal length of the lens 11, n1-n2 is a difference between direct light of the visible light and the near-infrared light, and n is a refractive index of the lens, wherein a difference between the focal length of the visible light and the focal length of the near-infrared light of 1 mm multiplied by 0.3 mm is a height difference between the first spectroscope 31 and the second spectroscope 41, and the height difference is a height difference between the first spectroscope 31 and the second spectroscope 41 based on a direction from the object to be detected to the lens 11. By setting the height of the first beam splitter 31 to be greater than the height of the second beam splitter 41, the first beam splitter 31 and the second beam splitter 41 can be directly switched without adjusting the lens 11 and the camera 10, so that a clear image can be obtained. This difference in height has guaranteed that only need can realize satisfying the inside and outside detection of accurate treating the detected object through adjusting to remove visible light subassembly 3 and near infrared light subassembly 4, need not readjust camera lens 11 just can guarantee the stability and the accuracy of formation of image.
In one embodiment of the present invention, the sliding member 2 includes a first detection position and a second detection position, and when the sliding member 2 slides to the first detection position, the image capturing assembly 1 and the first spectroscope 31 are arranged in a straight line; when the sliding member 2 slides to the second detection position, the image capturing assembly 1 and the second spectroscope 41 are linearly arranged. Through setting up first detection position and second and detecting the position, make formation of image more accurate, it is more accurate to detect.
Specifically, the visible light component 3 and the near-infrared light component 4 may be enclosed in a housing, and are integrally and slidably mounted on the sliding member 2, and openings for emitting light are provided on the enclosure corresponding to one surfaces of the first beam splitter 31 and the second beam splitter 41 facing the object to be detected and one surfaces facing the lens 11.
Further, on the basis of the above embodiment, the sliding member 2 includes a sliding rail and a sliding member disposed in the sliding rail, and the visible light source 30, the first beam splitter 31, the second beam splitter 41 and the near visible light source 30 are sequentially disposed on the sliding member in parallel. By arranging the slide rails, the sliding of the visible light source 30, the first beam splitter 31, the second beam splitter 41 and the near visible light source 30 is more stable and controllable.
Specifically, the slide rail may be an electric slide rail or a common slide rail, the slide member may be a slider, a slide plate, or the like, the slide member may be electrically controlled to move in the slide rail, and the slide member 2 may be manually adjusted by sliding to reach the first detection position/the second detection position, which is specifically set according to a mode desired by a user, and the present invention is not particularly limited.
On the basis of the above embodiment, the image acquisition device further comprises a mounting plate, and the image acquisition assembly 1 and the sliding member 2 are respectively arranged on the mounting plate. Through setting up the mounting panel, and will image acquisition subassembly 1 and slider 2 are located respectively on the mounting panel for holistic mounting structure is more stable, and then improves and detects the precision. In other embodiments of the present invention, the image capturing assembly 1 and the sliding member 2, the visible light assembly 3, and the near infrared light assembly 4 may also be mounted in a mounting housing, and an opening for forming a light path is provided on the housing at a position corresponding to the mounting member 5, and the present invention is not particularly limited.
On the basis of the above embodiment, the mounting member 5 is a robot arm. The mechanical arm can be arranged on the mounting plate or can be independently arranged, and can be adjusted according to actual mounting requirements, and the invention is not particularly limited. Through setting up installed part 5 is the arm for but wait to detect the position automatically regulated of thing, make the detection of waiting to detect the thing more convenient nimble controllable. In other embodiments of the invention, the mounting member 5 can also be a slide rail, a chute and the like, so that the situation that the object to be detected is too large in size and cannot be completely patted at one time is avoided, and the displacement can be performed through a mechanical arm, so that the detection process is more convenient and reasonable.
Further, the various films described in the above embodiments can be obtained by a manufacturing process. The film system is designed by matching the optical design principle with film system software and adopting a film design process for setting.
On the other hand, based on the apparatus in the above embodiment, the present invention also provides a semiconductor inspection method, including:
s100, acquiring first image information of a semiconductor to be detected;
s200, switching an optical assembly to acquire second image information of the semiconductor to be detected;
and S300, analyzing the first image information and the second image information to obtain a detection result of the semiconductor to be detected.
Specifically, the semiconductor to be detected is a wafer, visible light/near infrared light is emitted through the visible light assembly, the first spectroscope/the second spectroscope splits the visible light/near infrared light, the split reflected light is reflected onto the wafer, the wafer reflects the light beam back to the first spectroscope/the second spectroscope, projected light of the first spectroscope/the second spectroscope reaches the lens, the lens gathers the light beam on the receiving surface of the camera to obtain clear first image information, and the first image information received by the camera is transmitted to the computer, so that external detection of visible light beam imaging is performed. The first image information is external image information/internal image information of a wafer/semiconductor to be detected, and the first detection sequence can be specifically allocated through a control chip, a controller or a control program, and the first detection sequence can comprise a plurality of pieces.
And after the clear first image information is obtained, controlling a switching optical assembly, controlling the sliding piece to move when the first image information is the external image information of the wafer/semiconductor, and switching the visible light assembly into the near-infrared light assembly to perform the internal defect detection of the wafer/semiconductor assembly in the same way. In this case, the second image information is internal image information and may include a plurality of pieces. And the rear computer or the controller processes the first image information and the second image information to obtain a detection result.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, storage, databases, or other media used in embodiments provided herein may include non-volatile and/or volatile memory. Non-volatile memory can include read-only memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDRSDRAM), Enhanced SDRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), Rambus Direct RAM (RDRAM), direct bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM). Further, the memory may also include both the internal storage unit and the external storage device. The memory is used for storing application software installed on the mobile terminal and various data, such as program codes of the installed mobile terminal. The memory may also be used to temporarily store data that has been output or is to be output.
The processor may be, in some embodiments, a Central Processing Unit (CPU), a microprocessor, a tape processor or other data Processing chip, and is configured to run program codes stored in the memory or process data, for example, execute the mobile terminal flashing control Processing method, and the like.
The visual light assembly and the near infrared light assembly are arranged on one side of the image acquisition assembly, and are arranged on the sliding piece in a sliding mode side by side so as to switch the selection of the visual light and the near infrared light, and the appearance detection and the internal detection of the object to be detected are realized.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (13)
1. A semiconductor inspection apparatus, comprising:
an image acquisition component;
a displacement member: the displacement piece is arranged on one side of the image acquisition assembly;
a visible light component;
a near-infrared light component;
the visible light assembly and the near infrared light assembly are arranged on the displacement piece in a sliding mode side by side.
2. The semiconductor detection device according to claim 1, wherein the visible light assembly comprises a visible light source and a first beam splitter; the near infrared light assembly comprises a near infrared light source and a second spectroscope, and the displacement piece is a sliding piece.
3. The semiconductor detection device according to claim 2, wherein the first beam splitter and the second beam splitter are disposed adjacent to each other at an interval, and the visible light source, the first beam splitter, the second beam splitter and the near-visible light source are slidably disposed on the sliding member side by side in sequence.
4. The semiconductor detection device according to claim 2, further comprising a mounting member for mounting an object to be detected, wherein the mounting member is disposed on both sides of the sliding member opposite to the image capturing assembly.
5. The semiconductor detection device according to claim 2 or 3, wherein the image acquisition assembly comprises a camera and a lens, the lens is mounted on the camera, and a lens of the lens is plated with a high-transmittance film for near infrared band and visible band.
6. The semiconductor detection device according to claim 5, wherein the first beam splitter and the second beam splitter are cube beam splitters, one side surface of the first beam splitter and one side surface of the second beam splitter are disposed to face each other, and a sliding direction of the slider is perpendicular to an axial direction of the lens.
7. The semiconductor detection device according to claim 6, wherein the inclined surface of the first spectroscope is provided with a first semi-reflective semi-permeable membrane for the visible light band, so that at least one surface of the first spectroscope facing the visible light source is provided with a first light band antireflection film for visible light; the inclined plane of the second spectroscope is provided with a second semi-reflecting and semi-transmitting film aiming at the near-infrared light wave band, so that at least one surface of the second spectroscope facing the near-infrared light source is provided with a second light wave band antireflection film for near-infrared light.
8. A semiconductor detection device according to claim 6, wherein the height of the first beam splitter is greater than that of the second beam splitter, and the difference between the heights of the first beam splitter and the second beam splitter is equal to the product of the lens focal length and the ratio of the difference between the refractive index of visible light and the refractive index of near infrared light to the value obtained by subtracting 1 from the refractive index of the lens, and the ratio of the difference between the refractive index of visible light and the refractive index of near infrared light.
9. The semiconductor detection device according to claim 2 or 8, wherein the sliding member includes a first detection position and a second detection position, and when the sliding member slides to the first detection position, the image capturing assembly and the first beam splitter are arranged in a straight line; when the sliding piece slides to the second detection position, the image acquisition assembly and the second spectroscope are linearly arranged.
10. The semiconductor detection device according to claim 9, wherein the sliding member includes a sliding rail and a sliding member disposed in the sliding rail, and the visible light source, the first beam splitter, the second beam splitter, and the near-visible light source are sequentially disposed on the sliding member side by side.
11. A semiconductor inspection apparatus according to claim 2 or 9, further comprising a mounting plate, wherein the image capturing assembly and the slider are respectively disposed on the mounting plate.
12. A semiconductor testing apparatus according to claim 4, wherein the mounting member is a robotic arm.
13. A semiconductor inspection method, comprising:
acquiring first image information of a semiconductor to be detected;
switching the optical assembly to acquire second image information of the semiconductor to be detected;
and analyzing the first image information and the second image information to obtain a detection result of the semiconductor to be detected.
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Effective date of registration: 20210318 Address after: 518107 0402, block B, building 5, Huaqiang Creative Park, Biyan community, Guangming Street, Guangming District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Huatuo Semiconductor Technology Co.,Ltd. Address before: No. 202, building 9, changchengshijia, No. 7, Qinyuan Road, Songshanhu science and Technology Industrial Park, Dongguan City, Guangdong Province, 523808 Applicant before: Luo Jianhua |