CN112195504B - Method for growing two-dimensional organic single crystal - Google Patents
Method for growing two-dimensional organic single crystal Download PDFInfo
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- CN112195504B CN112195504B CN201911038621.8A CN201911038621A CN112195504B CN 112195504 B CN112195504 B CN 112195504B CN 201911038621 A CN201911038621 A CN 201911038621A CN 112195504 B CN112195504 B CN 112195504B
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- 239000013078 crystal Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000002904 solvent Substances 0.000 claims abstract description 63
- 238000009835 boiling Methods 0.000 claims abstract description 40
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 27
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerol group Chemical group OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000003153 chemical reaction reagent Substances 0.000 claims description 25
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 13
- 229960001701 chloroform Drugs 0.000 claims description 11
- JINUCGGYXBOOGT-UHFFFAOYSA-N 2,6-bis(4-hexylphenyl)anthracene Chemical group CCCCCCc1ccc(cc1)-c1ccc2cc3cc(ccc3cc2c1)-c1ccc(CCCCCC)cc1 JINUCGGYXBOOGT-UHFFFAOYSA-N 0.000 claims description 10
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 6
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 claims description 6
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 claims description 6
- 229940078552 o-xylene Drugs 0.000 claims description 2
- 125000003944 tolyl group Chemical group 0.000 claims description 2
- 230000005669 field effect Effects 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 6
- 238000005303 weighing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- MVPPADPHJFYWMZ-IDEBNGHGSA-N chlorobenzene Chemical group Cl[13C]1=[13CH][13CH]=[13CH][13CH]=[13CH]1 MVPPADPHJFYWMZ-IDEBNGHGSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229940126534 drug product Drugs 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000000825 pharmaceutical preparation Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
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Abstract
The invention discloses a method for growing a two-dimensional organic single crystal film, which comprises the following steps: adding a low-boiling point solvent into a viscous liquid substrate, standing at 10-25 ℃ for 1min, adding a high-boiling point solvent, and standing at 10-25 ℃ for 8-10 h to obtain a two-dimensional organic single crystal film, wherein the viscous liquid substrate is glycerol, and the high-boiling point solvent has a boiling point of 110-150 ℃. According to the method, a viscous liquid substrate plays a role in delaying solvent volatilization, a layer of high-boiling-point solvent is covered on a low-boiling-point solvent, microcrystalline particles are induced by the low-boiling-point solvent, and the high-boiling-point solvent plays a role in gathering small crystal grains and obtaining uniform and flat two-dimensional organic single crystals, so that the large-area two-dimensional organic single crystal film is prepared. After the two-dimensional organic single crystal film is prepared into an organic field effect transistor, the average number of the mobility of the organic field effect transistor is 2.06cm2/(v.s), the maximum mobility of the organic field-effect transistor is 3.07cm2/(v.s)。
Description
Technical Field
The invention belongs to the technical field of organic semiconductors, and particularly relates to a method for growing a two-dimensional organic single crystal film.
Background
The two-dimensional organic single crystal combines the advantages of easy preparation, flexibility, designable structure of organic material, easy dissolution, few charge defects, no crystal boundary and high device performance of single crystal, and is very extensive based on the advantages. Therefore, the production of high-quality two-dimensional organic single crystals is becoming an important point of attention at this stage. Recently, floating coffee ring effect, solution epitaxy method, and space-limited growth of two-dimensional organic single crystal all use high boiling point solvent to obtain two-dimensional organic single crystal, and it is difficult to realize the growth of two-dimensional organic single crystal by using low boiling point solvent to dissolve organic semiconductor.
Disclosure of Invention
In view of the defects of the prior art, the present invention aims to provide a method for growing a two-dimensional organic single crystal film, which uses a low-boiling point solvent to induce microcrystalline particles, and then uses a high-boiling point solvent to aggregate small crystal grains and obtain a uniform and flat two-dimensional organic single crystal.
The purpose of the invention is realized by the following technical scheme.
A method for growing a two-dimensional organic single crystal film, comprising the steps of:
adding a low-boiling-point solvent to a viscous liquid substrate, standing at 10-25 ℃ for 1min, adding a high-boiling-point solvent, and standing at 10-25 ℃ for 8-10 hours to obtain a two-dimensional organic single crystal film, wherein the viscous liquid substrate is glycerol, the low-boiling-point solvent is a mixture of an organic reagent and trichloromethane, and the ratio of the mass parts of the organic reagent to the volume parts of the trichloromethane is (0.18-0.5): 1, the boiling point of the high-boiling point solvent is 110-150 ℃.
In the above technical solution, the unit of the mass part is mg, and the unit of the volume part is mL.
In the technical scheme, the high-boiling-point solvent is toluene, chlorobenzene, o-xylene, m-xylene or p-xylene.
In the above technical solution, the ratio of the viscous liquid base, the low boiling point solvent and the high boiling point solvent is (25000) -30000): (50-80): (50-80).
In the above technical scheme, the organic reagent is C6-DPA or TFT-CN (c.wang, x.ren, c.xu, b.fu, r.wang, x.zhang, r.li, h.li, h.dong, y.zhen, s.lei, l.jiang, w.hu, adv.mater.2018,30,1706260.).
In the technical scheme, the volume of the added low-boiling-point solvent is 40-60 mu L, and preferably 50 mu L.
In the technical scheme, the thickness of the two-dimensional organic single crystal film is 4-15 nm.
Compared with the prior art, the method has the following beneficial technical effects:
according to the method, a viscous liquid substrate plays a role in delaying solvent volatilization, a layer of high-boiling-point solvent is covered on a low-boiling-point solvent, microcrystalline particles are induced by the low-boiling-point solvent, and then the high-boiling-point solvent plays a role in gathering small crystal grains and obtaining uniform and flat two-dimensional organic single crystals, so that the large-area two-dimensional organic single crystal film is prepared. After the two-dimensional organic single crystal film is prepared into an organic field effect transistor, the average number of the mobility of the organic field effect transistor is 2.06cm2/(v.s), the maximum mobility of the organic field-effect transistor is 3.07cm2/(v.s)。
Drawings
FIG. 1(a) is an optical microscope photograph of a two-dimensional organic single crystal film obtained by the method of example 1;
FIG. 1(b) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 2;
FIG. 1(c) is an optical microscope photograph of a two-dimensional organic single crystal film obtained by the method of example 3;
FIG. 1(d) is an optical microscope photograph of a two-dimensional organic single crystal film obtained by the method of example 4;
FIG. 1(e) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 5;
FIG. 2(a) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 6;
FIG. 2(b) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 7;
FIG. 2(c) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 8;
FIG. 2(d) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 9;
FIG. 2(e) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 10;
FIG. 2(f) is an optical microscopic view of a two-dimensional organic single-crystal film obtained by the method of example 11;
FIG. 3 is an optical microscopic view of single-crystal grains obtained by the production process of comparative example 1;
FIG. 4 is an optical microscope photograph of a two-dimensional organic single crystal film obtained by the production method of comparative example 2;
FIG. 5 is an optical microscope photograph of a two-dimensional organic single crystal film obtained by the method of comparative example 3;
FIG. 6 is a structural view of an organic field effect transistor fabricated from a two-dimensional organic single crystal film, in which 1 is a gold film, 2 is a two-dimensional organic single crystal film, and 3 is a silicon wafer;
FIG. 7 is a transfer characteristic curve of an organic field effect transistor of the two-dimensional organic single crystal film obtained in example 2;
fig. 8 is an output characteristic curve of an organic field effect transistor of the two-dimensional organic single crystal film (C6-DPA single crystal film) obtained in example 2.
Detailed Description
The technical scheme of the invention is further explained by combining specific examples.
The purity and manufacturer of the drug products referred to in the following examples are as follows:
C6-DPA (2, 6-bis (4-hexylphenyl) anthracene):
purity: 99 percent
The source is as follows: shanghai Nature chemical Co., Ltd
2. Toluene:
analytical purity
The source is as follows: rianlong Bohua (Tianjin) pharmaceutical chemistry Co., Ltd
3. Chlorobenzene
Purity: 99 percent
The source is as follows: yueli chemical Co Ltd of Tianjin City
4. Ortho-xylene
Purity: 99 percent
The source is as follows: yueli chemical Co Ltd of Tianjin City
5. Meta-xylene
Purity: 99 percent
The source is as follows: shanghai Tankou Technique Co., Ltd
6. Para-xylene
Purity: 99 percent
The source is as follows: shanghai Tankou Technique Co., Ltd
7. Silicon chip: SiO 22(thickness 300nm)/Si substrate
The types and manufacturers of the instruments involved in the following examples are as follows:
polarizing microscope Nikon OptiPlex 3046 japan;
atomic force microscope Bruker Dimension Icon usa;
probe station Keithley 4200, beijing, china.
In the following examples, parts by mass are in mg and parts by volume are in mL.
Examples 1 to 5
A method for growing a two-dimensional organic single crystal film, comprising the steps of:
putting 25mL of viscous liquid substrate into a weighing bottle with the cross section of 70mm multiplied by 35mm, adding 50 mu L of low-boiling-point solvent which is a mixture of an organic reagent and trichloromethane on the viscous liquid substrate by using a liquid transfer gun, standing at the room temperature of 20-25 ℃ for 1min, wherein the organic reagent is not completely volatilized, adding 50 mu L of high-boiling-point solvent by using the liquid transfer gun, and standing at the room temperature of 20-25 ℃ for 12 hours to obtain the two-dimensional organic single crystal film, wherein the organic reagent is C6-DPA.
The viscous liquid substrate is glycerol, and the ratio of the mass part of the organic reagent to the volume part of the chloroform is 0.2: 1, high boiling point solvents are shown in table 1.
TABLE 1
The two-dimensional organic single crystal films obtained in examples 1 to 5 were transferred onto a hydrophobic silicon wafer, and the silicon wafers obtained in examples 1 to 5 were observed under an optical microscope, as shown in FIGS. 1(a) to (e). As is clear from fig. 1(a) to (e), the two-dimensional organic single crystal films having a large area and a very thin thickness and having a uniform bluish color were formed in the end by coating the low boiling point solvent with different high boiling point solvents. The second dropwise addition of the high-boiling solvent is shown to have universality.
Taking 2 gold films 1 and attaching the gold films to the two-dimensional organic single crystal film prepared in example 2 in parallel (the two-dimensional organic single crystal film is located on the silicon wafer 2 at this time), wherein the thickness of the gold film is 160nm, the thickness of the two-dimensional organic single crystal film is 5.2nm, and preparing an organic field effect transistor device, as shown in fig. 6, 2 gold films are respectively used as a source electrode and a drain electrode, and the ratio (length-width ratio) of the distance between the two gold films to the length of the gold film perpendicular to the distance is 2.41: 3.59. as shown in fig. 7, according to formula IDS＝(W/2L)μCi(VGS–Vth)2，IDSIs the source-drain current, mu is the field effect mobility, VthThreshold voltage, VGSGate voltage, L is channel length, W is channel width and CiIs a specific capacitance (10nF cm)-2) From the data obtained from the transfer curve in fig. 7, the mobility of the organic field effect transistor device was measured to be 3.00cm2/(v.s) (maximum migration 3.07cm2/(v.s)), the average mobility of the organic field effect transistor devices measured was 2.06cm2/(v.s). The high quality and good performance of the device can be seen from both the transfer curve of fig. 7 and the output curve of fig. 8.
Examples 6 to 11
A method for growing a two-dimensional organic single crystal film, comprising the steps of:
putting 25mL of viscous liquid substrate into a weighing bottle with the cross section of 70mm multiplied by 35mm, adding 50 mu L (1 drop) of low-boiling-point solvent which is a mixture of an organic reagent and trichloromethane on the viscous liquid substrate by using a liquid transfer gun, then placing the viscous liquid substrate at the room temperature of 20-25 ℃ for a time T, wherein the time T and the state of the organic reagent at the time T are shown in a table 2, adding 50 mu L of high-boiling-point solvent by using the liquid transfer gun, and placing the viscous liquid substrate at the room temperature of 20-25 ℃ for 12 hours to obtain the two-dimensional organic single crystal film, wherein the organic reagent is C6-DPA.
The viscous liquid substrate is glycerol, and the ratio of the mass part of the organic reagent to the volume part of the chloroform is 0.2: 1, the high boiling point solvent is chlorobenzene.
TABLE 2
| Examples | T (Unit: second) |
| Example 6 | 0 |
| Example 7 | 30 |
| Example 8 | 60 |
| Example 9 | 90 |
| Example 10 | 120 |
| Example 11 | 180 |
The two-dimensional organic single crystal films obtained in examples 6 to 11 were transferred onto a hydrophobic silicon wafer, the silicon wafers obtained in examples 6 to 11 were observed under an optical microscope, and fig. 2(a) to 2(f) are optical microscope images of the two-dimensional organic single crystal films obtained by the methods of examples 6 to 11, and it was found from the images that the dropping time of example 6 was substantially similar to the two-dimensional organic single crystal grown directly in comparative example 3 described below, and it was found from example 10 and example 11 that when the second dropping time was longer than 90 seconds, a plurality of nucleation sites were easily formed on the same film, and finally when the second dropping time was 60 seconds, as in example 8 (example 2), a uniform and flat two-dimensional organic single crystal could be obtained, and the effect was the best when the time T was 60 seconds.
Comparative example 1
A method for preparing single crystal particles, comprising the steps of:
putting 25mL of viscous liquid substrate into a weighing bottle with the cross section of 70mm multiplied by 35mm, adding 50 mu L (1 drop) of low-boiling-point solvent on the viscous liquid substrate by using a liquid transfer gun, wherein the low-boiling-point solvent is a mixture of an organic reagent and trichloromethane, standing at room temperature of 20-25 ℃ for 180 seconds to completely volatilize the low-boiling-point solvent to obtain discontinuous linear and granular single crystal particles, transferring a single crystal particle film onto a silicon wafer, and an optical microscope picture is shown in figure 3, wherein the organic reagent is C6-DPA, the viscous liquid substrate is glycerol, and the ratio of the mass parts of the organic reagent to the volume parts of the trichloromethane is 0.2: 1.
comparative example 2
A preparation method of a two-dimensional organic single crystal film comprises the following steps:
putting 25mL of viscous liquid substrate into a weighing bottle with the cross section of 70mm multiplied by 35mm, adding 50 mu L (1 drop) of mixed solution on the viscous liquid substrate by using a liquid transfer gun, wherein the mixed solution is a mixture of an organic reagent and a high-boiling point solvent, and then placing the mixed solution at room temperature of 20-25 ℃ for 12 hours to completely volatilize the high-boiling point solvent to obtain a non-uniform two-dimensional organic single crystal with a molecular step, and transferring the non-uniform two-dimensional organic single crystal onto a silicon wafer, wherein an optical microscope picture is shown in figure 4, wherein the viscous liquid substrate is glycerol, the high-boiling point solvent is chlorobenzene, the organic reagent is C6-DPA, and the ratio of the mass fraction of the organic reagent to the volume fraction of the high-boiling point solvent is 0.: 1.
comparative example 3
A preparation method of a two-dimensional organic single crystal film comprises the following steps:
putting 25mL of viscous liquid substrate into a weighing bottle with the cross section of 70mm multiplied by 35mm, adding 50 mu L (1 drop) of mixed solution on the viscous liquid substrate by using a liquid transfer gun, wherein the mixed solution is a mixture of an organic reagent, a low-boiling point solvent and a high-boiling point solvent, standing at room temperature of 20-25 ℃ for 12 hours to completely volatilize the mixed solution, obtaining a non-uniform two-dimensional organic single crystal, and transferring the non-uniform two-dimensional organic single crystal onto a silicon wafer, wherein an optical microscope picture is shown in figure 5, wherein the viscous liquid substrate is glycerol, the low-boiling point solvent is trichloromethane, the high-boiling point solvent is chlorobenzene, the organic reagent is C6-DPA, and the ratio of the mass fraction of the organic reagent, the volume fraction of the low-boiling point solvent and the volume fraction of the high-boiling point solvent: 0.5: 0.5.
as is clear from comparative examples 1 to 3, only discrete, granular small crystals were obtained by directly using a low-boiling solvent, whereas a heterogeneous two-dimensional organic single crystal having molecular steps was easily obtained by directly using a high-boiling solvent for growth. Therefore, a low boiling point solvent containing an organic semiconductor (organic reagent) is dripped for the first time, crystallization is carried out to obtain a plurality of microcrystalline particles, and the small crystal particles are continuously aggregated and combined under the action of the high boiling point solvent, so that a large-area uniform two-dimensional organic single crystal is finally obtained.
The invention finally obtains the two-dimensional organic single crystal film with atomic level flatness by covering a layer of high boiling point solvent on the low boiling point solvent after the low boiling point solvent is incompletely volatilized. In the technical scheme of the invention, the technical effects consistent with the above embodiments can be realized by changing the quality and time of the organic reagent and the high-boiling-point solvent.
The invention has been described in an illustrative manner, and it is to be understood that any simple variations, modifications or other equivalent changes which can be made by one skilled in the art without departing from the spirit of the invention fall within the scope of the invention.
Claims (4)
1. A method for growing a two-dimensional organic single crystal film, comprising the steps of:
adding a low-boiling-point solvent to a viscous liquid substrate, placing for 1min at 10-25 ℃, adding a high-boiling-point solvent, and placing for 8-10 hours at 10-25 ℃ to obtain a two-dimensional organic single crystal film, wherein the viscous liquid substrate is glycerol, the low-boiling-point solvent is a mixture of an organic reagent and trichloromethane, the organic reagent is 2, 6-bis (4-hexylphenyl) anthracene, and the ratio of the mass fraction of the organic reagent to the volume fraction of the trichloromethane is (0.18-0.5): 1, the unit of the mass part is mg, the unit of the volume part is mL, the boiling point of the high-boiling point solvent is 110-30000 ℃, and the ratio of the viscous liquid substrate, the low-boiling point solvent and the high-boiling point solvent is (25000-30000): (50-80): (50-80).
2. The process according to claim 1, wherein the high boiling solvent is toluene, chlorobenzene, o-xylene, m-xylene or p-xylene.
3. The method according to claim 2, wherein the volume of the low-boiling solvent added is 40 to 60 μ L.
4. The method according to claim 3, wherein the thickness of the two-dimensional organic single crystal film is 4 to 15 nm.
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