CN112185863B - Furnace tube cleaning method and cleaning equipment - Google Patents
Furnace tube cleaning method and cleaning equipment Download PDFInfo
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- CN112185863B CN112185863B CN202011073112.1A CN202011073112A CN112185863B CN 112185863 B CN112185863 B CN 112185863B CN 202011073112 A CN202011073112 A CN 202011073112A CN 112185863 B CN112185863 B CN 112185863B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000010703 silicon Substances 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 39
- 231100000719 pollutant Toxicity 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 90
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000009279 wet oxidation reaction Methods 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D25/00—Devices or methods for removing incrustations, e.g. slag, metal deposits, dust; Devices or methods for preventing the adherence of slag
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a furnace tube cleaning method, which comprises the following steps: and placing a preset amount of silicon chips with hydrophobicity into the furnace tube, and heating the furnace tube for a first preset time at a first preset temperature to enable the silicon chips to absorb pollutants in the furnace tube. And cleaning the furnace tube by utilizing the hydrophobic silicon wafer to remove pollutants in the furnace tube, and the service life of the wafer boat is not affected. The invention also relates to furnace tube cleaning equipment.
Description
Technical Field
The invention relates to the technical field of manufacturing of polysilicon products, in particular to a furnace tube cleaning method and cleaning equipment.
Background
With the continuous development of chip manufacturing technology, the semiconductor silicon wafer is larger and larger in size, the technological requirements are stricter, and higher requirements are put on the periodic cleaning effect of the furnace tube. Simple furnace tube cleaning has failed to meet practical production applications, particularly for device products with higher requirements for metal contamination. In general, the chip manufacturing is performed through repeated processes such as a cleaning process, a diffusion process, an injection process, a photoetching process, an etching process and the like, after film formation is performed for many times, the more the residual metal ions and high polymer residues in the furnace tube accumulate, if the residual metal ions and the high polymer residues are removed irregularly, metal pollution and particle sources can be formed, so that the process yield and the product stability are affected.
The indispensable components in the furnace tube are a quartz tube (quartz tube) and a boat (boat). Generally, the quartz tube is made of quartz, and the boat is made of quartz or SiC. The silicon carbide boat has the advantages of good heat resistance, low thermal expansion coefficient and the like, and is often used in a high-temperature annealing process, and quartz is often used in a low-temperature annealing process.
The influence of metal contamination on semiconductor devices is: metal impurities tend to accumulate at the si—sio2 interface, affecting the integrity of the gate oxide (Gate Oxide Integrity, GOI for short), reducing the oxide breakdown voltage (Oxide breakdown voltage, BV-OX for short), and allowing the device to develop Leakage (Leakage). CMOS analog sensor (CMOS Imagine Sensor, CIS) products are particularly sensitive to metal impurities, particularly heavy metal impurities, and are prone to Dark Current (DC) resulting in white point defects (White Spot Defect).
The metal ions under the high temperature condition have higher diffusion coefficients in silicon and silicon dioxide, so that after the furnace tube is operated at high temperature for a long time, the metal pollution caused by the current process (components of quartz or silicon carbide) or the metal pollution brought by the previous process is easy to diffuse into the silicon wafer, and is difficult to remove by cleaning, thereby forming permanent defects. Therefore, the furnace platen must be cleaned periodically.
In the related art, cleaning is performed by chloride ions, but the lifetime of the boat is reduced.
Disclosure of Invention
In order to solve the technical problems, the invention provides a furnace tube cleaning method and cleaning equipment, which are used for cleaning a furnace tube, improving the yield of products and avoiding the influence on the service life of a wafer boat.
In order to achieve the above purpose, the invention adopts the following technical scheme: a furnace tube cleaning method comprising:
step S1: and placing a preset amount of silicon chips with hydrophobicity into the furnace tube, and heating the furnace tube for a first preset time at a first preset temperature to enable the silicon chips to absorb pollutants in the furnace tube.
Optionally, the method further comprises:
step S0: and cleaning the silicon wafer by adopting a solution containing hydrofluoric acid to make the silicon wafer have hydrophobicity.
Optionally, the method further comprises:
step S2: heating the furnace tube at a second preset temperature for a second preset time in a wet oxidation mode to form an oxide film on the surface of the silicon wafer absorbing pollutants so as to wrap the pollutants absorbed by the silicon wafer;
step S3: taking out the silicon wafer with the oxide film, and cleaning the silicon wafer to obtain the silicon wafer with hydrophobicity again;
repeating the steps S0-S3 for a plurality of times to finish the cleaning of the furnace tube.
Optionally, before the furnace tube is heated for a first preset time at a first preset temperature, so that the silicon wafer absorbs the pollutants in the furnace tube, the method further comprises: and (3) introducing inert gas into the furnace tube, and purging pollutants in the furnace tube.
Optionally, the second preset temperature is 900-1000 ℃, and the second preset time is 3-20 hours.
Optionally, the first preset temperature is 600-700 ℃, and the first preset time is 1-3 hours.
Optionally, a preset amount of silicon wafers with hydrophobicity are placed in the furnace tube, specifically, a plurality of silicon wafers with hydrophobicity are placed on a wafer boat in the furnace tube at intervals.
The embodiment of the invention also provides furnace tube cleaning equipment which is applied to the furnace tube cleaning method and comprises a silicon wafer cleaning unit, wherein the silicon wafer cleaning unit is used for cleaning a silicon wafer by adopting a solution containing hydrofluoric acid so as to enable the silicon wafer to have hydrophobicity;
the silicon wafer conveying unit is used for placing a preset amount of silicon wafers with hydrophobicity into the furnace tube;
the heating unit is used for heating the furnace tube for a first preset time at a first preset temperature so that pollutants in the furnace tube are absorbed by the silicon wafer;
and the oxide film forming unit is used for heating the furnace tube at a second preset temperature for a second preset time in a wet oxidation mode so as to form an oxide film on the surface of the silicon wafer absorbing the pollutants, so as to wrap the pollutants absorbed by the silicon wafer.
The beneficial effects of the invention are as follows: and cleaning the furnace tube by utilizing the hydrophobic silicon wafer to remove pollutants in the furnace tube, and the service life of the wafer boat is not affected.
Drawings
FIG. 1 is a schematic flow chart of a furnace cleaning method according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the related art, the following method is generally adopted for cleaning the furnace tube:
1. using N 2 Cleaning, N at high temperature 2 Small particles and organic residues in the furnace tube can be removed, but metal ions cannot be removed;
2. chlorine ion cleaning is adopted, and dichloroethylene (Trans-LC, TCA) or Cl in HCl is often adopted to remove residual metal ions, but TCA and HCl are slowly eliminated due to environmental protection and safety;
the most commonly used technology is to clean with ethylene dichloride (Trans-LC), which is a liquid carried by nitrogen into furnace tube, and react with oxygen at high temperature to generate HCl which can purify furnace tube. The chemical reaction equation is: c (C) 2 H 2 Cl 2 +O 2 →2HCl+2CO 2 ；
Under the condition that the temperature is 800-1100 ℃, the furnace tube is cleaned by adopting Trans-LC for about 1 hour, and alkali metal ions such as Na/K and organic matters can be effectively removed. However, at the same time, HCl is easy to carry out trace Al/Fe/Cu/Ca in the furnace tube part at high temperature, and HCl cannot remove heavy metals such as Al/Fe/Cu/Ca, so that heavy metal accumulation is easy to form. Cleaning itself is prone to Trans-LC or HCl residues that can adversely affect subsequent processes, such as HCl residues thickening the oxide layer thickness, causing process instability.
The cleaning method can have risks of metal and particles, and HCl and dichloroethylene can greatly reduce the service life of the wafer boat.
In view of the above technical problems, referring to fig. 1, an embodiment of the present invention provides a furnace tube cleaning method, including:
step S1: and placing a preset amount of silicon chips with hydrophobicity into the furnace tube, and heating the furnace tube for a first preset time at a first preset temperature to enable the silicon chips to absorb pollutants in the furnace tube.
When the surface of the silicon wafer has hydrophobic property, the surface of the silicon wafer is silicon, the structure of the silicon wafer is Si-H, and a plurality of hanging bonds exist, so that the surface state of the silicon wafer is unstable, and organic matters, metals and Particles are particularly easy to absorb. In this embodiment, by utilizing the characteristic of the silicon wafer with hydrophobicity, the silicon wafer with hydrophobicity is used for cleaning the furnace tube to remove pollutants in the furnace tube, and the silicon wafer with hydrophobicity is placed in the closed space of the furnace tube and heated at the same time, so that the pollutants in the furnace tube are as follows: organics, metals, and Particles are readily absorbed by the silicon wafer, which has hydrophobicity. In contrast to the related art using N 2 Or the method for cleaning the furnace tube by the chloride ions can effectively remove pollutants in the furnace tube, including metal ions, and can not influence the service life of the wafer boat.
In this embodiment, the first preset temperature is 600-700 degrees, and the first preset time is 1-3 hours.
In this embodiment, the furnace tube cleaning method further includes:
step S0: and cleaning the silicon wafer by adopting a solution containing hydrofluoric acid to make the silicon wafer have hydrophobicity.
And removing an oxide layer on the surface of the common silicon wafer through HF (hydrofluoric acid) solution to enable the silicon wafer to have hydrophobicity.
In this embodiment, the furnace tube cleaning method further includes:
step S2: heating the furnace tube at a second preset temperature for a second preset time in a wet oxidation mode to form an oxide film on the surface of the silicon wafer absorbing pollutants so as to wrap the pollutants absorbed by the silicon wafer;
step S3: taking out the silicon wafer with the oxide film, and cleaning the silicon wafer to obtain the silicon wafer with hydrophobicity again;
putting the silicon wafer with hydrophobicity into the furnace tube again, and heating the furnace tube for a preset time at a preset temperature to enable the silicon wafer to absorb pollutants in the furnace tube again;
repeating the steps S0-S3 for a plurality of times to finish the cleaning of the furnace tube.
Through wet oxidation mode, form the oxide film on the surface of the silicon chip that absorbs the pollutant, wrap up the pollutant in the oxide film, when the edge takes out the silicon chip, take out the pollutant together, the effectual furnace tube that cleans.
The thickness of the oxide film formed on the surface of the silicon wafer absorbing the contaminants by wet oxidation may be set according to the length of the second preset time, and in this embodiment, the second preset temperature is 900-1000 degrees, and the second preset time is 3-20 hours, but not limited thereto.
In this embodiment, before the furnace tube is heated at the first preset temperature for the first preset time, so that the silicon wafer absorbs the pollutants in the furnace tube, the furnace tube cleaning method further includes: and (3) introducing inert gas into the furnace tube, and purging pollutants in the furnace tube.
The gas flow of the inert gas is influenced, and the inert gas can purge pollutants in the furnace tube, for example, pollutants in corners in the furnace tube are purged by the inert gas, so that the pollutants are conveniently absorbed by the silicon wafer, and the cleaning efficiency can be improved.
In this embodiment, by setting the first preset temperature, the contaminants that are difficult to volatilize may volatilize so as to be absorbed by the silicon wafer, and the inert gas purging cooperates with the setting of the first preset temperature to improve the cleaning efficiency of the furnace tube.
In the present embodiment, the inert gas is PN 2 But is not limited thereto.
In this embodiment, for example, in order to improve the cleaning efficiency of the furnace tube, a preset amount of silicon wafers with hydrophobicity are placed in the furnace tube, specifically, a plurality of silicon wafers with hydrophobicity are placed on a wafer boat in the furnace tube at intervals.
The arrangement of a plurality of silicon wafers which are arranged on the wafer boat at intervals increases the capability of absorbing pollutants once by the silicon wafers, reduces the time for cleaning and recycling the silicon wafers, and improves the efficiency.
The method is characterized in that the silicon wafer with hydrophobicity absorbs pollutants in the furnace tube, the furnace tube is cleaned, the silicon wafer is taken out of the furnace tube after one cleaning, the silicon wafer can be reused after cleaning, the number of times of repeated cleaning by the silicon wafer with hydrophobicity can be set according to actual needs, for example, the amount of the silicon wafer adopted, the amount of pollutants in the furnace tube and the like, and when the number of the silicon wafers put into the furnace tube each time is large, the number of times of repeated cleaning can be reduced, and the time is saved.
The embodiment also provides furnace tube cleaning equipment, which is applied to the furnace tube cleaning method, and comprises a silicon wafer cleaning unit, wherein the silicon wafer cleaning unit is used for cleaning a silicon wafer by adopting a solution containing hydrofluoric acid so as to enable the silicon wafer to have hydrophobicity;
the silicon wafer conveying unit is used for placing a preset amount of silicon wafers with hydrophobicity into the furnace tube;
the heating unit is used for heating the furnace tube for a first preset time at a first preset temperature so that pollutants in the furnace tube are absorbed by the silicon wafer;
and the oxide film forming unit is used for heating the furnace tube at a second preset temperature for a second preset time in a wet oxidation mode so as to form an oxide film on the surface of the silicon wafer absorbing the pollutants, so as to wrap the pollutants absorbed by the silicon wafer.
While the foregoing is directed to the preferred embodiment of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, and such changes and modifications are intended to be included within the scope of the invention.
Claims (6)
1. A furnace tube cleaning method, comprising:
step S1: placing a preset amount of silicon chips with hydrophobicity into a furnace tube, and heating the furnace tube for a first preset time at a first preset temperature to enable the silicon chips to absorb pollutants in the furnace tube;
the furnace tube cleaning method before step S1 further comprises:
step S0: cleaning the silicon wafer by adopting a solution containing hydrofluoric acid to enable the silicon wafer to have hydrophobicity;
step S2: heating the furnace tube at a second preset temperature for a second preset time in a wet oxidation mode to form an oxide film on the surface of the silicon wafer absorbing pollutants so as to wrap the pollutants absorbed by the silicon wafer;
step S3: taking out the silicon wafer with the oxide film, and cleaning the silicon wafer to obtain the silicon wafer with hydrophobicity again;
repeating the steps S0-S3 for a plurality of times to finish the cleaning of the furnace tube.
2. The furnace tube cleaning method of claim 1, further comprising, before the furnace tube is heated at the first preset temperature for the first preset time to allow the silicon wafer to absorb contaminants in the furnace tube: and (3) introducing inert gas into the furnace tube, and purging pollutants in the furnace tube.
3. The furnace tube cleaning method of claim 1, wherein the second preset temperature is 900-1000 degrees and the second preset time is 3-20 hours.
4. The furnace tube cleaning method of claim 1, wherein the first preset temperature is 600-700 degrees and the first preset time is 1-3 hours.
5. The furnace cleaning method of claim 1, wherein a predetermined amount of hydrophobic silicon wafers are placed in the furnace, in particular a plurality of hydrophobic silicon wafers are placed on a boat in the furnace at intervals.
6. A furnace tube cleaning apparatus for use in the furnace tube cleaning method of any one of claims 1-5, comprising:
the silicon wafer cleaning unit is used for cleaning the silicon wafer by adopting a solution containing hydrofluoric acid so as to enable the silicon wafer to have hydrophobicity;
the silicon wafer conveying unit is used for placing a preset amount of silicon wafers with hydrophobicity into the furnace tube;
the heating unit is used for heating the furnace tube for a first preset time at a first preset temperature so that pollutants in the furnace tube are absorbed by the silicon wafer;
and the oxide film forming unit is used for heating the furnace tube at a second preset temperature for a second preset time in a wet oxidation mode so as to form an oxide film on the surface of the silicon wafer absorbing the pollutants, so as to wrap the pollutants absorbed by the silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011073112.1A CN112185863B (en) | 2020-10-09 | 2020-10-09 | Furnace tube cleaning method and cleaning equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011073112.1A CN112185863B (en) | 2020-10-09 | 2020-10-09 | Furnace tube cleaning method and cleaning equipment |
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| CN112185863A CN112185863A (en) | 2021-01-05 |
| CN112185863B true CN112185863B (en) | 2024-01-26 |
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| CN202011073112.1A Active CN112185863B (en) | 2020-10-09 | 2020-10-09 | Furnace tube cleaning method and cleaning equipment |
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| US4579596A (en) * | 1984-11-01 | 1986-04-01 | Union Carbide Corporation | In-situ removal of oily deposits from the interior surfaces of conduits |
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| WO2011159197A1 (en) * | 2010-06-18 | 2011-12-22 | Bakhturin Dmitry Alexandrovich | Method and device for cleaning the inner surfaces of complex closed structures |
| KR20130005386A (en) * | 2011-07-06 | 2013-01-16 | 나유집 | Cleaning method and cleaning apparatus |
| CN109764694A (en) * | 2019-01-21 | 2019-05-17 | 鞍钢实业集团有限公司原燃料生产服务分公司 | A kind of intermediate frequency furnace crucible sediment deslagging method for smelting acieral |
| CN110787767A (en) * | 2019-08-15 | 2020-02-14 | 北京科技大学 | Hydrophobic adsorbent and preparation method thereof |
| CN111009457A (en) * | 2019-11-19 | 2020-04-14 | 江苏英锐半导体有限公司 | Diffusion pretreatment method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160339486A1 (en) * | 2015-05-21 | 2016-11-24 | Illinois Tool Works Inc. | Reflow oven liner, system and method |
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2020
- 2020-10-09 CN CN202011073112.1A patent/CN112185863B/en active Active
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|---|---|---|---|---|
| US4579596A (en) * | 1984-11-01 | 1986-04-01 | Union Carbide Corporation | In-situ removal of oily deposits from the interior surfaces of conduits |
| KR20030046138A (en) * | 2001-12-05 | 2003-06-12 | 삼성전자주식회사 | Vertical diffusion furnace which can count number of particles |
| WO2011159197A1 (en) * | 2010-06-18 | 2011-12-22 | Bakhturin Dmitry Alexandrovich | Method and device for cleaning the inner surfaces of complex closed structures |
| KR20130005386A (en) * | 2011-07-06 | 2013-01-16 | 나유집 | Cleaning method and cleaning apparatus |
| CN109764694A (en) * | 2019-01-21 | 2019-05-17 | 鞍钢实业集团有限公司原燃料生产服务分公司 | A kind of intermediate frequency furnace crucible sediment deslagging method for smelting acieral |
| CN110787767A (en) * | 2019-08-15 | 2020-02-14 | 北京科技大学 | Hydrophobic adsorbent and preparation method thereof |
| CN111009457A (en) * | 2019-11-19 | 2020-04-14 | 江苏英锐半导体有限公司 | Diffusion pretreatment method |
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| CN112185863A (en) | 2021-01-05 |
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