CN112185825A - Method for manufacturing semiconductor silicon chip protective layer - Google Patents
Method for manufacturing semiconductor silicon chip protective layer Download PDFInfo
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- CN112185825A CN112185825A CN202010958525.1A CN202010958525A CN112185825A CN 112185825 A CN112185825 A CN 112185825A CN 202010958525 A CN202010958525 A CN 202010958525A CN 112185825 A CN112185825 A CN 112185825A
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- silicon wafer
- semiconductor silicon
- photoresist
- edge
- protective layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 134
- 239000010703 silicon Substances 0.000 title claims abstract description 134
- 239000011241 protective layer Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 74
- 239000003292 glue Substances 0.000 claims abstract description 19
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 8
- 238000009736 wetting Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000004642 Polyimide Substances 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 14
- 238000001514 detection method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The application relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor silicon chip protective layer. The manufacturing method of the semiconductor silicon chip protective layer comprises the following steps: enabling the semiconductor silicon wafer to rotate at a constant speed in a low-rotation-speed state; dripping 1.5-3 cc of photoresist with the viscosity range of 5-80 cp on the center of the surface of the semiconductor silicon wafer; keeping the semiconductor silicon wafer for 5-15 s in a low-rotation-speed state, and enlarging the coverage area of the photoresist; in a time period of 2 s-5 s, the semiconductor silicon wafer is lifted from a low-speed rotation state to a high-speed rotation state, and surplus photoresist is thrown out; in a high-speed rotation state, the semiconductor silicon wafer is kept for 25 s-45 s, so that the thickness of the photoresist reaches 8000A-50000A; and removing the photoresist at the edge position of the semiconductor silicon wafer according to the preset edge removing width by an edge photoresist removing process. The scheme provided by the application can solve the problems that the edge removing width cannot be detected in the related technology and the accuracy of the edge glue removing process is influenced.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor silicon chip protective layer.
Background
In the related art, the high-voltage device has a high requirement on reliability, and finally, in the manufacturing process of the high-voltage device, Polyimide (Polyimide) is generally used as a device protective layer, that is, a Polyimide layer is spin-coated on the surface of the device, so that the device is protected from normal operation in severe environments such as high temperature, high pressure and the like, and the service life of the device is prolonged. The thicker the polyimide layer is, the better the protection effect on the device is, and the polyimide layer of the high-voltage device can reach 30-40 um generally.
However, during the polyimide spin coating process, the remaining polyimide quickly solidifies due to the high air flow at the wafer edge, forming a raised edge. Polyimide has high viscosity, the problem of incomplete Edge Removal easily occurs in an Edge Bead Removal (EBR) process, the thickness of a polyimide formed protective layer is thick, the machine cannot detect the Edge Removal width, and the accuracy of the Edge Bead Removal process is influenced.
Disclosure of Invention
The application provides a manufacturing method of a semiconductor silicon chip protective layer, which can solve the problem that the accuracy of an edge glue removing process is influenced because the edge removing width cannot be detected in the related technology.
The application provides a manufacturing method of a semiconductor silicon chip protective layer, which comprises the following steps:
providing a semiconductor silicon wafer;
enabling the semiconductor silicon wafer to rotate at a constant speed in a low-rotation-speed state;
dripping 1.5-3 cc of photoresist with the viscosity range of 5-80 cp on the center of the surface of the semiconductor silicon wafer;
keeping the semiconductor silicon wafer for 5-15 s in a low-rotation-speed state, and enlarging the coverage area of the photoresist;
in a time period of 2 s-5 s, lifting the semiconductor silicon wafer from a low-speed rotation state to a high-speed rotation state, and throwing out redundant photoresist;
in a high-speed rotation state, the semiconductor silicon wafer is kept for 25-45 s, so that the thickness of the photoresist reaches 8000-50000A;
and removing the photoresist at the edge position of the semiconductor silicon wafer according to the preset edge removing width by an edge photoresist removing process.
Optionally, after the step of cleaning and drying the semiconductor silicon wafer, before the step of dispensing the photoresist with the viscosity range of 5cp to 80cp to the center of the surface of the semiconductor silicon wafer, the steps of:
and performing tackifying treatment on the surface of the semiconductor silicon wafer to make the surface of the semiconductor silicon wafer have hydrophobicity.
Optionally, the step of performing adhesion promotion processing on the surface of the semiconductor silicon wafer includes:
baking the semiconductor silicon wafer for 40-60 s in a vacuum environment at the temperature of 50-180 ℃;
and spraying HMDS gas to the surface of the semiconductor silicon wafer to enable the HMDS gas to be adsorbed on the surface of the semiconductor silicon wafer.
Optionally, after the step of performing the adhesion promotion treatment on the surface of the semiconductor silicon wafer, before the step of dispensing the photoresist with the viscosity ranging from 5cp to 80cp to the center of the surface of the semiconductor silicon wafer, the steps of:
and carrying out pre-wetting treatment on the semiconductor silicon wafer.
Optionally, the step of performing pre-wetting treatment on the semiconductor silicon wafer includes:
enabling the semiconductor silicon wafer to rotate at a constant speed in the low-rotation-speed state;
and spraying deionized water on the surface of the semiconductor silicon wafer to wet the surface of the semiconductor.
Optionally, after the step of maintaining the semiconductor silicon wafer in the low rotation speed state for 5s to 15s and expanding the coverage area of the photoresist, before the step of removing the photoresist at the edge position of the semiconductor silicon wafer according to the predetermined trimming width by the edge photoresist removing process, the following steps are further performed:
soft drying for 50-70 s in the environment with the temperature of 50-120 ℃.
Optionally, when the step of removing the edge photoresist is performed, the step of removing the photoresist at the edge position of the semiconductor silicon wafer according to a predetermined edge removal width includes:
acquiring the outer edge information of the photoresist in real time;
calculating the actual edge removing width according to the outer edge information of the photoresist;
and stopping the edge glue removing process when the actual edge removing width reaches the preset edge removing width.
Optionally, the rotation speed of the semiconductor silicon wafer in the low rotation speed state is 100rpm to 500 rpm.
Optionally, the rotation speed of the semiconductor silicon wafer in the high-speed rotation state is 800rpm to 3000 rpm.
The technical scheme at least comprises the following advantages: after the photoresist with the viscosity range of 5-80 cp is subjected to low-speed photoresist throwing, accelerated photoresist throwing and high-speed photoresist throwing, the photoresist finally covers a semiconductor silicon wafer to form a protective film, and the protective film is thin in thickness, strong in adhesion and less in residue, so that the actual edge removing width can be accurately measured during the edge photoresist removing process, and the accuracy of the edge photoresist removing process in the edge removing process can be monitored.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a method for fabricating a protective layer of a semiconductor silicon wafer according to an embodiment of the present application;
fig. 2 to 4 are schematic diagrams illustrating an edge glue removing process performed on a protective layer made of polyimide as a material on a semiconductor silicon wafer in the related art;
fig. 5 to 7 are schematic diagrams illustrating an edge glue removing process performed on a protective layer on a semiconductor silicon wafer according to an embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 shows a flow chart of a method for manufacturing a protective layer of a semiconductor silicon wafer, and referring to fig. 1, the method for manufacturing the protective layer of the semiconductor silicon wafer comprises the following steps:
step S1: and providing a semiconductor silicon wafer.
As one example, after step S1, before step S2, the following steps are also performed: and performing tackifying treatment on the surface of the semiconductor silicon wafer to make the surface of the semiconductor silicon wafer become hydrophobic.
When the surface tackifying treatment is carried out on the semiconductor silicon wafer, the semiconductor silicon wafer can be baked for 40-60 s in a vacuum environment at the temperature of 50-180 ℃; and spraying Hexamethyldisilazane (HMDS) gas to the surface of the semiconductor silicon wafer so that the HMDS gas is adsorbed on the surface of the semiconductor silicon wafer. HMDS gas is introduced and adsorbed on the surface of the semiconductor silicon wafer, so that the surface of the semiconductor silicon wafer is changed from hydrophilicity to hydrophobicity, and the adhesiveness of the surface of the semiconductor silicon wafer to a film layer to be formed in the subsequent steps is enhanced.
Step S2: and enabling the semiconductor silicon wafer to rotate at a constant speed in a low-rotation-speed state, wherein the rotation speed of the semiconductor silicon wafer in the low-rotation-speed state is 100-500 rpm.
As one embodiment, when the semiconductor silicon wafer is enabled to rotate at a constant speed in a low rotation speed state, the semiconductor silicon wafer is subjected to pre-wetting treatment. The pre-wetting treatment of the semiconductor silicon wafer comprises the following steps: enabling the semiconductor silicon wafer to rotate at a constant speed in the low-rotation-speed state, wherein the rotation speed of the semiconductor silicon wafer in the low-rotation-speed state is 100-500 rpm; and spraying deionized water on the surface of the semiconductor silicon wafer to wet the surface of the semiconductor. The surface of the semiconductor silicon wafer is rinsed by deionized water to be wet, so that the subsequent photoresist coating is easy.
Step S3: and dripping 1.5-3 cc of photoresist with the viscosity ranging from 5cp to 80cp on the center of the surface of the semiconductor silicon wafer.
In one embodiment, the step of performing a thickening treatment on the surface of the semiconductor silicon wafer before the step S4 and the step of performing a pre-wetting treatment on the semiconductor silicon wafer can form good adhesion with the protective layer formed in the step S4 and thereafter.
Step S4: and keeping the semiconductor silicon wafer for 5-15 s in a low-rotation-speed state, and enlarging the coverage area of the photoresist.
In this embodiment, when the semiconductor silicon wafer rotates at a constant speed in a low-speed state, the photoresist with the viscosity range of 5cp to 80cp is dripped on the center of the surface of the semiconductor silicon wafer, and because the viscosity coefficient is small, the viscous resistance which hinders the expansion of the photoresist is small when the semiconductor silicon wafer continues to maintain the low-speed state for 5s to 15s, so that the photoresist can be subjected to preliminary photoresist throwing, the area of the photoresist covering the surface of the semiconductor silicon wafer is preliminarily enlarged, and the thin protective layer serving as a cushion can be formed for subsequent steps while the adhesion of the photoresist to the surface of the semiconductor silicon wafer is improved.
Step S5: in a time period of 2 s-5 s, lifting the semiconductor silicon wafer from a low-speed rotation state to a high-speed rotation state, and throwing out redundant photoresist; the rotating speed of the semiconductor silicon wafer in the high-speed rotating state is 800 rpm-3000 rpm.
In this embodiment, the semiconductor silicon wafer is accelerated from a low-speed rotation state to a high-speed rotation state, so that the photoresist is spread over the surface of the semiconductor silicon wafer, and the excess photoresist is thrown away when the semiconductor silicon wafer rotates at a high speed.
Step S6: and in a high-speed rotation state, the semiconductor silicon wafer is kept for 25-45 s, so that the thickness of the photoresist reaches 8000A-50000A.
After the initial expansion of the step S5, the photoresist with the viscosity range of 5-80 cp is accelerated to be lifted to a high-speed rotation state, the redundant photoresist is thrown out under the high-speed rotation state, so that the thickness of the photoresist on a semiconductor reaches 8000A-50000A, and the photoresist with the thickness range of 8000A-50000A can avoid the condition that the photoresist is remained when the subsequent edge photoresist removing process is carried out due to the excessively thick viscosity of the photoresist, and the remained photoresist can influence the judgment of the edge photoresist removing process on the photoresist removing width.
In one embodiment, in step S6, after the protective layer photoresist has a thickness of 8000A to 50000A, the following steps are further performed: soft baking for 50-70 s in the environment with the temperature of 50-120 ℃ to solidify the formed protective layer photoresist and prevent the uneven film layer caused by continuous glue dripping.
Step S7: and removing the photoresist at the edge position of the semiconductor silicon wafer according to the preset edge removing width by an edge photoresist removing process.
Fig. 2 to 4 are schematic diagrams illustrating an edge glue removing process performed on a protective layer 12 made of polyimide as a material on a semiconductor silicon wafer in the related art. Referring to fig. 2, a semiconductor silicon wafer 11 in the related art is placed on a rotatable stage 14, a protective layer 12 made of polyimide is covered on the surface of the semiconductor silicon wafer 11, detection nozzles 13 are respectively disposed on upper and lower sides of an edge of the semiconductor silicon wafer 11, the detection nozzles 13 are used for spraying a solvent capable of dissolving the protective layer 12 and detecting information on an outer edge of the protective layer 12, and the detection nozzles 13 can move in a radial direction of the semiconductor silicon wafer 11, so that edge bead removal is performed, and a trimming width is adjusted. FIG. 3 is a schematic diagram of a vertical cross-section A-A of the semiconductor silicon wafer 11 and the upper protective layer in FIG. 2. Referring to fig. 4, the protective layer 12 made of polyimide forms a residue 121 after the edge bead removal is completed. The residue 121 interferes with the outer edge information of the protective layer 12 detected by the detecting nozzle 13, so that the detecting nozzle 13 cannot accurately determine the outer edge information of the protective layer 12, and the protective layer 12 of the semiconductor silicon wafer 11 cannot be accurately trimmed according to the predetermined trimming width.
Fig. 5 to 7 are schematic diagrams illustrating an edge glue removing process performed on the protective layer 22 on the semiconductor silicon wafer according to the embodiment of the present application. Referring to fig. 5, the semiconductor silicon wafer 21 in the embodiment of the present invention is placed on a rotatable stage 24, the surface of the semiconductor silicon wafer 21 is covered with a protective layer 22 having a viscosity ranging from 5cp to 80cp, the upper and lower sides of the edge of the semiconductor silicon wafer 21 are respectively provided with a detection nozzle 23, the detection nozzles 23 are used for spraying a solvent capable of dissolving the protective layer 22 and detecting the outer edge information of the protective layer 22, and the detection nozzles 23 can move along the radial direction of the semiconductor silicon wafer 21, so as to remove the edge glue and adjust the edge removal width. FIG. 7 is a schematic diagram of the structure of FIG. 5, which is a longitudinal B-B cross section of the semiconductor silicon wafer and the protective layer thereon, comparing FIG. 7 with FIG. 3, the protective layer 22 with viscosity ranging from 5cp to 80cp is thinner than the protective layer 12 made of polyimide, and no residue is formed after the edge bead removal is completed. Therefore, the outer edge information of the detection protective layer 22 can be accurately judged for the detection nozzle 23, and the protective layer 22 of the semiconductor silicon wafer 21 is accurately trimmed according to the predetermined trimming width.
In one embodiment, when the edge glue removing process is performed, edge position information of the semiconductor silicon wafer can be obtained first, and outer edge information of the photoresist can be collected in real time; calculating the actual edge removing width according to the edge position information of the semiconductor silicon wafer and the outer edge information of the photoresist; and stopping the edge glue removing process when the actual edge removing width reaches the preset edge removing width.
In the edge glue removing process, the semiconductor silicon wafer rotates at a constant speed of 1000 rpm-1400 rpm.
In this embodiment, the photoresist with the viscosity range of 5cp to 80cp is subjected to low-speed spin coating, accelerated spin coating and high-speed spin coating. The low-speed whirl coating can improve the adhesion between a subsequently formed protective layer and the semiconductor silicon wafer, the glue is spread to the surface of the semiconductor silicon wafer as much as possible in the shortest time by means of the accelerated whirl coating, the local glue is prevented from being solidified to form residues, the redundant glue can be thrown out by means of the high-speed whirl coating, the glue is finally covered on the semiconductor silicon wafer to form a protective film, the thickness of the protective film is thin, the adhesion is strong, the residues are few, the actual edge removing width can be accurately measured when the edge glue removing process is carried out, and therefore the accuracy of the edge glue removing process in the edge removing process is monitored.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (9)
1. A manufacturing method of a semiconductor silicon chip protective layer is characterized by comprising the following steps:
providing a semiconductor silicon wafer;
enabling the semiconductor silicon wafer to rotate at a constant speed in a low-rotation-speed state;
dripping photoresist with the viscosity range of 5-80 cp on the center of the surface of the semiconductor silicon wafer;
keeping the semiconductor silicon wafer for 5-15 s in a low rotating speed state, and enlarging the coverage area of the photoresist;
in a time period of 2 s-5 s, lifting the semiconductor silicon wafer from a low-speed rotation state to a high-speed rotation state, and throwing out redundant photoresist;
in a high-speed rotation state, the semiconductor silicon wafer is kept for 25-45 s, so that the thickness of the photoresist reaches 8000-50000A;
and removing the photoresist at the edge position of the semiconductor silicon wafer according to the preset edge removing width by an edge photoresist removing process.
2. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 1, wherein before the step of dispensing the photoresist with the viscosity ranging from 5cp to 80cp to the center of the surface of the semiconductor silicon wafer, the steps of:
and performing tackifying treatment on the surface of the semiconductor silicon wafer to make the surface of the semiconductor silicon wafer have hydrophobicity.
3. The method for manufacturing a protective layer for a semiconductor silicon wafer according to claim 2, wherein the step of performing an adhesion-promoting treatment on the surface of the semiconductor silicon wafer comprises:
baking the semiconductor silicon wafer for 40-60 s in a vacuum environment at the temperature of 50-180 ℃;
and spraying HMDS gas to the surface of the semiconductor silicon wafer to enable the HMDS gas to be adsorbed on the surface of the semiconductor silicon wafer.
4. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 2, wherein after the step of performing the adhesion-promoting treatment on the surface of the semiconductor silicon wafer, before the step of dispensing the photoresist with the viscosity ranging from 5cp to 80cp onto the center of the surface of the semiconductor silicon wafer, the steps of:
and carrying out pre-wetting treatment on the semiconductor silicon wafer.
5. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 4, wherein the step of pre-wetting the semiconductor silicon wafer comprises:
enabling the semiconductor silicon wafer to rotate at a constant speed in the low-rotation-speed state;
and spraying deionized water on the surface of the semiconductor silicon wafer to wet the surface of the semiconductor.
6. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 1, wherein after the step of expanding the coverage area of the photoresist by keeping the semiconductor silicon wafer in a low rotation speed state for 5s to 15s, before the step of removing the photoresist at the edge position of the semiconductor silicon wafer according to the predetermined edge removal width by the edge photoresist removing process, further performing:
soft drying for 50-70 s in the environment with the temperature of 50-120 ℃.
7. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 1, wherein the step of removing the photoresist at the edge position of the semiconductor silicon wafer according to the predetermined edge removal width while the step of removing the photoresist through the edge photoresist removal process is performed comprises:
acquiring the outer edge information of the photoresist in real time;
calculating the actual edge removing width according to the outer edge information of the photoresist;
and stopping the edge glue removing process when the actual edge removing width reaches the preset edge removing width.
8. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 1, wherein the rotation speed of the semiconductor silicon wafer in the low rotation speed state is 100rpm to 500 rpm.
9. The method for manufacturing a protective layer on a semiconductor silicon wafer according to claim 1, wherein the rotation speed of the semiconductor silicon wafer in the high-speed rotation state is 800rpm to 3000 rpm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116931376A (en) * | 2023-09-15 | 2023-10-24 | 江苏中科智芯集成科技有限公司 | Wafer fan-out type packaging method and structure |
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| US5843527A (en) * | 1995-06-15 | 1998-12-01 | Dainippon Screen Mfg. Co., Ltd. | Coating solution applying method and apparatus |
| CN103977947A (en) * | 2014-05-20 | 2014-08-13 | 上海华力微电子有限公司 | High-viscosity photoresist coating method and photo-etching method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843527A (en) * | 1995-06-15 | 1998-12-01 | Dainippon Screen Mfg. Co., Ltd. | Coating solution applying method and apparatus |
| CN103977947A (en) * | 2014-05-20 | 2014-08-13 | 上海华力微电子有限公司 | High-viscosity photoresist coating method and photo-etching method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116931376A (en) * | 2023-09-15 | 2023-10-24 | 江苏中科智芯集成科技有限公司 | Wafer fan-out type packaging method and structure |
| CN116931376B (en) * | 2023-09-15 | 2023-12-08 | 江苏中科智芯集成科技有限公司 | Wafer fan-out type packaging method and structure |
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