CN111524792B - Coating method of non-photosensitive photoresist - Google Patents
Coating method of non-photosensitive photoresist Download PDFInfo
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- CN111524792B CN111524792B CN202010342187.9A CN202010342187A CN111524792B CN 111524792 B CN111524792 B CN 111524792B CN 202010342187 A CN202010342187 A CN 202010342187A CN 111524792 B CN111524792 B CN 111524792B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The application discloses a coating method of a non-photosensitive photoresist, and relates to the field of semiconductor manufacturing. The method comprises the steps of coating a non-photosensitive photoresist on the surface of a wafer in a spin coating mode; cleaning the edge and the back of the wafer by using N-methyl pyrrolidone; cleaning the back surface of the wafer by using a volatile organic solvent, wherein the volatile organic solvent is used for removing the N-methyl pyrrolidone remained on the back surface of the wafer; controlling the wafer to rotate, and drying the back surface of the wafer; the problem that N-methyl pyrrolidone is easy to remain after the edge and the back of the wafer are cleaned in the existing method is solved; the method has the advantages that the residual N-methyl pyrrolidone on the edge and the back of the wafer is effectively removed, the contamination of a transmission arm is avoided, the continuous production of a machine table is ensured, and meanwhile, the thickness of the non-photosensitive photoresist is ensured to meet the product requirement.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a coating method of a non-photosensitive photoresist.
Background
In semiconductor manufacturing, a photolithography process is an important part, and a design pattern on a mask is copied to the surface of a wafer by photolithography so as to prepare for a subsequent etching process or an implantation process. A photoresist is required in the photolithography process.
Polyimide (Polyimide) is an organic polymer material, and is classified into photosensitive and non-photosensitive materials. In the manufacturing process of some power devices with high reliability requirements, the photolithography process needs to use non-photosensitive polyimide, which can be used as a protective layer to remain on the surface of the wafer.
When the coating is performed, the non-photosensitive polyimide is coated by a spin coating method, and because the edge of the wafer has surface tension, the non-photosensitive polyimide is accumulated on the back and the edge of the wafer in the coating process, and the accumulated non-photosensitive polyimide needs to be cleaned and removed.
However, the chemical agent for cleaning the non-photosensitive polyimide remains on the back surface of the wafer, which causes contamination of the robot arm and makes the wafer easily fall off during the transportation process.
Disclosure of Invention
In order to solve the problems in the related art, the present application provides a coating method of a non-photosensitive resist. The technical scheme is as follows:
in one aspect, an embodiment of the present application provides a method for coating a non-photosensitive photoresist, including:
coating a non-photosensitive photoresist on the surface of the wafer in a spin coating mode;
cleaning the edge and the back of the wafer by using N-methyl pyrrolidone;
Cleaning the back surface of the wafer by using a volatile organic solvent, wherein the volatile organic solvent is used for removing the N-methyl pyrrolidone remained on the back surface of the wafer;
and controlling the wafer to rotate, and drying the back surface of the wafer.
Optionally, the step of coating a non-photosensitive photoresist on the surface of the wafer by spin coating includes:
spraying non-photosensitive photoresist on the surface of the wafer;
the wafer is controlled to rotate, so that the non-photosensitive photoresist is formed into a film.
Optionally, cleaning the edge and the back of the wafer by using N-methyl pyrrolidone, including:
and spraying N-methyl pyrrolidone by using the edge ring removing device to clean the edge and the back of the wafer.
Optionally, the edge ring removing devices are arranged above and below the wafer, and the edge ring removing devices are aligned with the edge of the wafer;
cleaning the back side of the wafer with a volatile organic solvent, comprising:
the volatile organic solvent is sprayed out by a rim removing device arranged below the wafer, so that the back surface of the wafer is cleaned.
Optionally, after the back surface of the wafer is cleaned by using the volatile organic solvent, the method further includes:
and placing the wafer on a hot plate for soft baking.
Optionally, the non-photosensitive photoresist is non-photosensitive polyimide.
Optionally, the volatile organic solvent is PGMEA.
Optionally, the volatile organic solvent is an ester or fatty alcohol solvent with a boiling point below 120 ℃.
The technical scheme at least comprises the following advantages:
coating a non-photosensitive photoresist on the surface of the wafer in a spin coating mode, and cleaning the edge and the back of the wafer by using N-methyl pyrrolidone; the back of the wafer is cleaned by using a volatile organic solvent, so that the problem that N-methyl pyrrolidone is easy to remain after the edge and the back of the wafer are cleaned in the conventional method is solved; the method has the advantages that the residual N-methyl pyrrolidone on the edge and the back of the wafer is effectively removed, the contamination of a transmission arm is avoided, the continuous production of a machine table is ensured, and meanwhile, the thickness of the non-photosensitive photoresist is ensured to meet the product requirement.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a method for coating a non-photosensitive photoresist according to one embodiment of the present disclosure;
FIG. 2 is a schematic view of the coating of a non-photosensitive photoresist;
FIG. 3 is a schematic illustration of non-photosensitive photoresist remaining at the wafer edge and backside;
FIG. 4 is a schematic illustration of NMP remaining on the back side of the wafer;
FIG. 5 is a schematic diagram illustrating an embodiment of a wafer after being subjected to a back washing process;
FIG. 6 is a flow chart of a method for coating a non-photosensitive resist according to another embodiment of the present application;
fig. 7 is a schematic diagram illustrating an implementation of a coating method of a non-photosensitive resist according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a method for coating a non-photosensitive photoresist according to an embodiment of the present application is shown, the method at least includes the following steps:
in step 101, a non-photosensitive photoresist is coated on the surface of the wafer by spin coating.
As shown in fig. 2, a non-photosensitive photoresist is applied to the surface of the wafer 22 using a photoresist nozzle 21.
In step 102, the edge and backside of the wafer are cleaned using N-methylpyrrolidone.
During the process of cleaning and cleaning the wafer by using N-methyl pyrrolidone (NMP), the wafer keeps rotating, and the rotating speed is set in advance according to the actual situation.
The N-methyl pyrrolidone dissolves the non-photosensitive photoresist deposited on the edge and the back of the wafer, and the dissolved non-photosensitive photoresist on the edge and the back of the wafer is thrown away as the wafer rotates. However, since the volatility of N-methyl pyrrolidone is low, and in order to ensure that the thickness of the non-photosensitive photoresist coated on the surface of the wafer meets the product requirements, after the edge and the back of the wafer are cleaned by N-methyl pyrrolidone, N-methyl pyrrolidone remains on the back of the wafer.
As shown in fig. 4, the non-photosensitive resist 23 deposited on the edge and the back surface of the wafer 22 is removed, but N-methylpyrrolidone 24 remains on the back surface of the wafer 22.
In step 103, the back side of the wafer is cleaned with a volatile organic solvent.
The volatile organic solvent is used to remove the N-methylpyrrolidone remaining on the back surface of the wafer.
In the cleaning process, the wafer is kept rotating at a low speed, and the rotating speed is set in advance according to the actual situation.
And (4) washing away the residual N-methyl pyrrolidone on the back of the wafer by using a volatile organic solvent.
In step 104, the wafer is controlled to rotate, and the back surface of the wafer is dried.
In order to ensure that the thickness of the non-photosensitive photoresist coated on the surface of the wafer meets the requirements of products, the rotation speed and the rotation time of the wafer are limited, and the wafer cannot rotate at a high speed for a long time.
As shown in fig. 5, NMP remaining on the back surface of the wafer 22 is removed.
In summary, according to the coating method of the non-photosensitive photoresist provided in the embodiment of the present application, the non-photosensitive photoresist is coated on the surface of the wafer by a spin coating method, and the edge and the back of the wafer are cleaned by N-methylpyrrolidone; the back of the wafer is cleaned by using a volatile organic solvent, so that the problem that N-methyl pyrrolidone is easy to remain after the edge and the back of the wafer are cleaned in the conventional method is solved; the method has the advantages that the residual N-methyl pyrrolidone on the edge and the back of the wafer is effectively removed, the contamination of a transmission arm is avoided, the continuous production of a machine table is ensured, and meanwhile, the thickness of the non-photosensitive photoresist is ensured to meet the product requirement.
In an alternative embodiment based on the embodiment shown in FIG. 1, the non-photosensitive photoresist is a non-photosensitive polyimide.
In an alternative embodiment based on the embodiment shown in fig. 1, the volatile organic solvent is PGMEA (propylene glycol methyl ether acetate).
In an alternative embodiment based on the embodiment shown in fig. 1, the volatile organic solvent is an ester or fatty alcohol solvent with a boiling point below 120 ℃. Such as: thinner (OK 73: PGME mixed with PGMEA), isopropanol.
Referring to fig. 6, a method for coating a non-photosensitive photoresist according to another embodiment of the present application is shown, the method at least includes the following steps:
in step 601, a non-photosensitive photoresist is sprayed onto the wafer surface.
Optionally, the non-photosensitive photoresist is non-photosensitive polyimide. The non-photosensitive polyimide is mainly composed of a polyimide precursor and N-methylpyrrolidone (NMP), wherein the content of NMP is 75-80%.
NMP has the characteristics of high solubility, low volatility, and the like.
During the process of spraying the non-photosensitive photoresist on the surface of the wafer, the wafer is kept still or slowly rotates.
In step 602, the wafer is rotated to form a non-photosensitive photoresist.
And controlling the wafer to rotate at a preset speed in an accelerated manner, so that the non-photosensitive photoresist is stretched to the whole surface of the wafer to form a film.
In the wafer rotating process, the redundant non-photosensitive photoresist is thrown out, and the non-photosensitive photoresist is accumulated on the edge and the back of the wafer.
In step 603, the edge and the back of the wafer are cleaned by ejecting N-methylpyrrolidone through the rim removal device.
Optionally, the photoresist rotary gumming machine is provided with a rim removing device, the rim removing device is arranged above and below the wafer, and the rim removing device is aligned with the edge of the wafer.
As shown in fig. 7, the edge ring removing devices 25 are disposed above and below the wafer 22, the edge ring removing devices 25 are aligned with the edge of the wafer 22, the edge ring removing devices 25 disposed above and below the wafer 22 simultaneously eject N-methylpyrrolidone, and as the wafer 22 rotates, the N-methylpyrrolidone on the edge and the back surface of the wafer is washed away.
In step 604, a volatile organic solvent is ejected by a rim removing device disposed under the wafer to clean the back surface of the wafer.
Since NMP remains on the back surface of the wafer, the NMP remaining on the back surface of the wafer is removed as the wafer 22 rotates by ejecting a volatile organic solvent by a rim removing device provided below the wafer.
In one example, the volatile organic solvent is PGMEA.
In the wafer back cleaning process, the wafer is kept rotating, the volatile organic solvent washes away the residual NMP on the wafer back, meanwhile, the volatility of the volatile organic solvent is good, the wafer can be dried in a rotating process, and residues on the wafer back are avoided.
In step 605, the wafer is controlled to rotate, and the back surface of the wafer is spun.
And controlling the wafer to rotate, drying the back of the rotated wafer, and ensuring that the thickness of the non-photosensitive photoresist on the surface of the wafer meets the product requirement.
In step 606, the wafer is placed on a hot plate for soft baking.
Optionally, the wafer after being coated with the glue is placed on a vacuum hot plate for heat conduction, and the heat of the hot plate is transferred to the photoresist on the surface of the wafer from the back side of the wafer.
In summary, the coating method of the non-photosensitive photoresist provided by the embodiment of the application solves the problem that N-methyl pyrrolidone is easy to remain after the edge and the back of the wafer are cleaned in the existing method; the method has the advantages that the residual N-methyl pyrrolidone on the edge and the back of the wafer is effectively removed, the contamination of a transmission arm is avoided, the continuous production of a machine table is ensured, and meanwhile, the thickness of the non-photosensitive photoresist is ensured to meet the product requirement.
Fig. 2, 3, 4, and 5 show only a partial region of the wafer.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (8)
1. A method of coating a non-photosensitive photoresist, the method comprising:
coating a non-photosensitive photoresist on the surface of the wafer in a spin coating mode;
cleaning the edge and the back of the wafer by using N-methyl pyrrolidone;
cleaning the back surface of the wafer by using a volatile organic solvent, wherein the volatile organic solvent is used for removing the N-methyl pyrrolidone remained on the back surface of the wafer;
and controlling the wafer to rotate, and drying the back surface of the wafer.
2. The method of claim 1, wherein the step of coating the non-photosensitive photoresist on the surface of the wafer by spin coating comprises:
spraying non-photosensitive photoresist on the surface of the wafer;
and controlling the wafer to rotate to enable the non-photosensitive photoresist to form a film.
3. The method of claim 1, wherein the cleaning the edge and the back side of the wafer with N-methyl pyrrolidone comprises:
and spraying N-methyl pyrrolidone by using a rim removing device to clean the edge and the back of the wafer.
4. A method according to claim 3, wherein the rim removal devices are disposed above and below the wafer, the rim removal devices being aligned with the edge of the wafer;
the cleaning of the back surface of the wafer by using the volatile organic solvent includes:
and spraying a volatile organic solvent by a rim removing device arranged below the wafer to clean the back surface of the wafer.
5. The method of claim 1, wherein after the cleaning the backside of the wafer with the volatile organic solvent, the method further comprises:
and placing the wafer on a hot plate for soft baking.
6. The method of any of claims 1 to 5, wherein the non-photosensitive photoresist is a non-photosensitive polyimide.
7. The method according to any one of claims 1 to 5, wherein the volatile organic solvent is PGMEA.
8. The method according to any one of claims 1 to 5, wherein the volatile organic solvent is an ester or fatty alcohol solvent having a boiling point of 120 ℃ or lower.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010342187.9A CN111524792B (en) | 2020-04-27 | 2020-04-27 | Coating method of non-photosensitive photoresist |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010342187.9A CN111524792B (en) | 2020-04-27 | 2020-04-27 | Coating method of non-photosensitive photoresist |
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| CN111524792A CN111524792A (en) | 2020-08-11 |
| CN111524792B true CN111524792B (en) | 2022-06-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115957937A (en) * | 2023-01-04 | 2023-04-14 | 青岛天仁微纳科技有限责任公司 | Wash limit equipment of gluing suitable for square substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6485576B1 (en) * | 1996-11-22 | 2002-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing coating bead at wafer flat edge |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN110729180A (en) * | 2019-11-26 | 2020-01-24 | 上海华力集成电路制造有限公司 | Crystal edge washing process method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8420550B2 (en) * | 2006-12-15 | 2013-04-16 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for cleaning backside etch during manufacture of integrated circuits |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6485576B1 (en) * | 1996-11-22 | 2002-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing coating bead at wafer flat edge |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN110391135A (en) * | 2019-08-08 | 2019-10-29 | 武汉新芯集成电路制造有限公司 | Remove the manufacturing method of the remaining method of photoresist and semiconductor devices |
| CN110729180A (en) * | 2019-11-26 | 2020-01-24 | 上海华力集成电路制造有限公司 | Crystal edge washing process method |
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