CN112180352A - High-integration-level comprehensive radio frequency sensing array system - Google Patents
High-integration-level comprehensive radio frequency sensing array system Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S13/0209—Systems with very large relative bandwidth, i.e. larger than 10 %, e.g. baseband, pulse, carrier-free, ultrawideband
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
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- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
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Abstract
A high-integration-level comprehensive radio frequency sensing array system is based on a board-level high-density integration design concept, a multi-layer heterogeneous circuit board formed by a broadband antenna array, radio frequency channels and digital processing is vertically interconnected in a three-dimensional and low-loss mode through fuzz buttons, large-scale structural parts, connectors and the like are avoided, transmission loss can be reduced, and chip efficiency is improved. By arranging the echo power monitoring unit between the broadband radiation array layer and the tile type T/R component layer, when the echo power exceeds a set value due to the fact that the antenna unit standing wave is too large (not less than 3), the drain electrode of the T/R channel power amplifier chip is automatically turned off to supply power, so that the power amplifier chip is prevented from being burnt, and the use of a multi-octave ultra-wideband isolator is avoided. The high-integration-level comprehensive radio frequency sensor array meets the requirements of the conduction, the high integration level and the light weight of the integrated, high-integration-level and radio frequency channel of the multi-functional integrated satellite for detecting dry attack.
Description
Technical Field
The invention relates to a high-integration comprehensive radio frequency sensing array system, and belongs to the field of integrated comprehensive aperture and comprehensive radio frequency design.
Background
At present, space information system construction is basically divided according to functions at home and abroad, such as a communication satellite, a remote sensing satellite, a reconnaissance satellite and the like, and satellite platform radio equipment (relay, navigation, measurement and control) and load equipment (space-based communication, radar detection, electronic reconnaissance and the like) have various requirements on antennas and radio frequency channels. With the development of electronic information technology, some disadvantages are shown: such as low cost-effectiveness ratio, poor reconfigurable capability and great difficulty in information fusion. In recent years, the concept of satellite multifunctional integration is silently created, multiple functions such as radar communication reconnaissance navigation and the like are realized on one satellite platform, all the functions are organically combined and shared by software and hardware resources, the operational capacity of the system can be greatly improved, the technical level and the application capacity of the satellite are greatly improved, and the cost-benefit ratio is improved. The radio frequency circuit, the antenna and the like on the satellite occupy more than 60% of the total mass of the satellite load, and the cost, the volume, the power consumption and the like are far higher than those of the signal processing part, so the key and the difficulty of realizing the multifunctional integration of the satellite lies in the integration of the satellite radio frequency receiving and transmitting antenna and the radio frequency channel.
Task systems such as radar, communication, navigation, electronic warfare and the like usually work in different frequency bands, the size difference of working bandwidths is great, and the required polarization mode, gain, dynamic range and beam coverage are different. The traditional design idea is that the radar communication navigation electronic warfare load is composed of independent equipment, software and hardware resources are used independently, the strip and block division boundary is obvious, the resource scheduling use is limited, and the efficiency-cost ratio is extremely low. In order to meet the requirements of military equipment development integration, multiple functions and software, the integrated integration of an ultra-wideband array antenna and a wideband reconfigurable radio frequency front end is realized on a radio frequency micro-system platform to form a modular, expandable and reconfigurable comprehensive radio frequency sensor array with high integration level, which supports the on-line reconfiguration of frequency bands, bandwidths, power, gain, beam coverage and scanning, and working modes, and meets the requirements of conducting, detecting, dry attacking and multifunctional integrated satellites on the integration, high integration level and intellectualization of apertures and radio frequency channels. Compared with the traditional design concept of discrete devices, the volume and weight of the radio frequency sensing area are reduced by about two thirds, and the hardware sharing capability and the standard modularization level of the radio frequency sensing area are improved, so that a technical foundation is laid for the standardization of a software multifunctional load radio frequency sensing area system architecture.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the defects of the prior art are overcome, a high-integration-level comprehensive radio frequency sensor array system is provided, based on a board-level high-density integration design concept, a multilayer heterogeneous circuit board formed by a broadband radiation array, radio frequency channels and digital processing is vertically interconnected in a three-dimensional low-loss mode through fuzz buttons, large-scale structural parts, connectors and the like are avoided, transmission loss can be reduced, chip efficiency is improved, a modularized, expandable and reconfigurable high-integration-level comprehensive radio frequency sensor array is formed, and the requirements of a conduction detection and attack multifunctional integrated satellite on integration, high integration and light weight of apertures and radio frequency channels are met. Compared with the traditional design concept of discrete devices, the volume and weight of the radio frequency sensing area are reduced by about two thirds, and the hardware sharing capability and the standard modularization level of the radio frequency sensing area are improved, so that a technical foundation is laid for the standardization of a software multifunctional load radio frequency sensing area system architecture.
The purpose of the invention is realized by the following technical scheme:
a high-integration integrated radio frequency sensing array system adopts a layered structure, and each layer sequentially comprises a broadband radiation array, a tile type T/R component, a microwave up-down frequency conversion channel, a digital baseband processing circuit and an echo power monitoring unit;
the broadband radiation array is used for receiving and transmitting wireless signals; the tile type T/R assembly is used for power amplification, numerical control attenuation, phase shift and power division; the microwave up-down frequency conversion channel is used for filtering, amplifying and mixing frequency and providing a frequency source and an electronic switch; the digital baseband processing circuit is used for signal waveform generation, beam forming, digital-to-analog conversion and signal acquisition;
the layers are vertically interconnected by radio frequency through fuzz buttons;
the echo power monitoring unit is electrically connected with the broadband radiation array and the tile type T/R assembly and used for monitoring the echo of each antenna of the broadband radiation array, and when the echo of any antenna is larger than a preset value, the power amplifier chip in the tile type T/R assembly corresponding to the antenna is turned off.
Preferably, the wideband radiation array includes M × N antenna units, and a value range of a bandwidth f of each antenna unit is f0≤f≤Pf0P is a positive integer and 3 is equal to or less than P, f0The lower limit of the operating frequency of each antenna unit.
Preferably, the microwave up-down frequency conversion channel is formed by stacking a plurality of microwave PCB boards, components on each microwave PCB board realize the interconnection between MMICs through gold wire bonding, and the microwave PCB boards on different layers realize the signal interconnection through holes.
Preferably, in the integrated radio frequency sensor array system with high integration level, the echo power monitoring unit includes a bidirectional coupler, a detector, and a control unit; the echo of the antenna passes through the bidirectional coupler and is compared with a set value in the control unit after being detected by the detector, and when the echo exceeds the set value, the control unit controls the power amplifier chip to be switched off.
Preferably, in the integrated radio frequency sensor array system with high integration level, the echo power monitoring unit monitors the standing wave ratio or the echo power of each antenna of the broadband radiation array.
Preferably, in the integrated rf sensor array system with high integration, the preset value of standing-wave ratio is 3, and the preset value of echo power is 1/4 of incident power.
Preferably, the method for turning off the power amplifier chip is to turn off the drain electrode of the power amplifier chip to supply power.
Preferably, the high-integration integrated radio frequency sensor array system is characterized in that the broadband radiation array comprises 8 × 8 antenna units working in a frequency band of 2-10 GHz, and the scanning range is ± 60 °.
Preferably, in the integrated radio frequency sensor array system with high integration level, the broadband radiation array utilizes a polarization synthesizer to realize dual linear polarization.
In the integrated radio frequency sensor array system with high integration level, preferably, the tile type T/R assembly comprises 4T/R assemblies, and each T/R assembly comprises 4 × 4 channels; each T/R component comprises a GaAs chip layer, a fuzz button adapter plate and an SoC chip control layer; the SoC chip control layer and the GaAs chip layer are vertically interconnected through a fuzz button adapter plate.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the multilayer heterogeneous circuit board formed by the broadband array antenna, the radio frequency channel and the digital processing is vertically interconnected in a three-dimensional and low-loss manner through the fuzz buttons, so that large-scale structural members, connectors, interconnection switching, cables and the like are avoided, the material cost is reduced, meanwhile, the procedures of welding the structural members and the connectors and the like are omitted, the transmission loss can be reduced, the chip efficiency is improved, the power consumption is reduced, the integration level of the product is improved, and the longitudinal size of the comprehensive radio frequency sensing module is reduced. And the process and the manual link are greatly reduced, the automation of the product is further improved, the debugging workload is reduced, the batch production of the product is facilitated, the consistency of the product is improved, and the product cost is reduced. The modularized, expandable and reconfigurable comprehensive radio frequency sensor array with high integration level, which is formed by the invention, supports the on-line reconfiguration of frequency band, bandwidth, power, gain, beam coverage and scanning and working mode, and meets the requirements of the integration, high integration level and intellectualization of the aperture and radio frequency channel of the conduction, exploration and dry attack multifunctional integrated satellite. Compared with the traditional design concept of discrete devices, the volume and weight of the radio frequency sensing area are reduced by about two thirds, and the hardware sharing capability and the standard modularization level of the radio frequency sensing area are improved, so that a technical foundation is laid for the standardization of a software multifunctional integrated load radio frequency sensor system architecture.
According to the invention, the echo power monitoring unit is arranged between the broadband radiation array layer and the tile type T/R component layer, and when the echo power exceeds a set value due to overlarge standing wave of the antenna unit (not less than 3), the drain electrode of the T/R channel power amplification chip is automatically turned off to supply power, so that the power amplification chip is prevented from being burnt, and a multi-octave (not less than 5) ultra-wideband isolator (more than 5 octave isolator is difficult to develop).
Drawings
FIG. 1 is a diagram of the overall architecture of a highly integrated RF sensor array microsystem;
FIG. 2 is a functional block diagram of a tiled T/R component;
FIG. 3 is a schematic block diagram cross-sectional view of a microwave frequency conversion layer;
FIG. 4 is a functional block diagram cross-section of a digital baseband processing layer;
FIG. 5 is a cross-sectional view of a broadband radiating array and a tiled T/R assembly vertical interconnect;
FIG. 6 is a cross-sectional view of a vertical interconnect of a multi-layer PCB board;
FIG. 7 is a schematic diagram of an embodiment of an integrated RF sensor microsystem;
FIG. 8 is an exploded view of an embodiment of an integrated RF sensor microsystem;
FIG. 9 is a diagram of an embodiment wide bandwidth wide angle scanning antenna element;
FIG. 10 is a diagram of an embodiment wide bandwidth wide angle scanning antenna array;
FIG. 11 is a view showing the configuration of a T/R module according to the embodiment;
FIG. 12 is an internal exploded view of the T/R assembly of the embodiment;
FIG. 13 is a functional block diagram of an embodiment echo power monitoring;
FIG. 14 is a block diagram of an embodiment microwave conversion layer implementation.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
A modularized light-weight receiving and transmitting array which can be used for broadband wide-angle scanning, various polarized transmitting and receiving, beam forming, frequency band, bandwidth and other working parameters and can be reconstructed on line, namely a high-integration comprehensive radio frequency sensing array system. A modularized ultra-wideband sub-array, a tile type T/R component, an up-down frequency conversion channel formed by laminating a GaAs-based active frequency mixing multifunctional chip and a microwave substrate, a digital baseband processing circuit formed by functional devices responsible for waveform generation, beam forming, digital-to-analog conversion, signal acquisition preprocessing and the like and interconnection wiring among the digital baseband processing circuits are integrated in a plurality of circuit boards in a high density manner, a system-level microsystem is formed by vertical interconnection between the circuit boards, and an integrated comprehensive radio frequency sensing array which can be self-adaptively reconstructed on line is formed by realizing working frequency band, bandwidth, waveform generation and beam forming.
The invention mainly aims at the high-integration three-dimensional heterogeneous vertical interconnection of a width radiation array, a tile type T/R assembly, a microwave up-down frequency conversion channel and a digital baseband processing circuit. The invention realizes a modularized, expandable and reconfigurable comprehensive radio frequency sensor array micro-system, effectively reduces the volume, weight and power consumption of the multifunctional integrated satellite, and improves the cost-effectiveness ratio of the system.
The integrated radio frequency sensing array system with high integration level comprises a width radiation array, a tile type T/R assembly, a microwave up-down frequency conversion channel and a digital baseband processing circuit.
As shown in fig. 1, a high integration integrated rf sensor array system is implemented as follows:
(1) operated by M × N at f0≤f≤Pf0The broadband wide-angle scanning planar phased array antenna unit of the frequency band forms a broadband radiation array, the unit interval is d, wherein,
p is a positive integer and is not less than 3, M, N is a positive integer and is not less than M, N, so that a first layer of the integrated radio frequency sensor array is formed;
(2) the second layer is a tiled T/R assembly, as shown in FIG. 2. The scale is M multiplied by N, the space distance of the components is d, and the space distance is consistent with the space distance of the feed port of the broadband array radiating element. The T/R component layer mainly comprises a power amplifier, a numerical control attenuator, a phase shifter, a power divider and the like of substrates such as GaAs, GaN and the like, and is integrated on a few chips through a multi-channel SoC, the layers are attached to the surface of the multilayer microwave board, and the multilayer microwave board is vertically interconnected in radio frequency through a vertical interconnection connector module (composed of a hair button and a metal aluminum plate shell);
(3) the third layer is an up-down conversion channel formed by stacking microwave PCB boards, as shown in FIG. 3. The active frequency mixing multifunctional chip mainly comprises an active frequency mixing multifunctional chip based on a GaAs process, and comprises electronic switches, a filter, an amplifier, a frequency mixer and various frequency source components, wherein MMICs are interconnected in the same layer through gold wire bonding, signal interconnection is realized between layers through interconnection through holes, and a bottom layer supporting plate is made of a PCB material and serves as a microwave signal transmission channel;
(4) the fourth layer is the digital baseband processing layer, as shown in fig. 4. The digital logic computation and storage chip mainly comprises an ADC, a DAC, an FPGA, a DSP, a CPU, a DDR, an SDRAM and the like. The chip layer is connected with each other through gold wire bonding, and the chip layers are connected with each other through TSV (through silicon via) connecting through holes;
(5) the first broadband radiation array layer and the second tile type T/R assembly are vertically interconnected in a radio frequency mode through a vertical interconnection connector module (formed by a hair button and a metal aluminum plate shell), and the radio frequency interconnection is carried out as shown in figure 5;
an echo power monitoring unit is arranged between the broadband radiation array layer and the tile type T/R component layer, when the antenna scanning standing wave is larger than 3, and the echo power is larger than 1/4 of the incident power, the drain electrode emission switch of the T/R channel power amplifier chip is automatically turned off, and the power amplifier chip is prevented from being damaged due to overlarge echo power.
The echo power monitoring unit mainly comprises a bidirectional coupler, a detector and a control unit, wherein the echo of the antenna unit passes through the bidirectional coupler, is compared with a set value through the detector after being detected, and when the echo exceeds the set value, the control unit controls a drain switch of the power amplifier chip and turns off the drain power supply of the power amplifier chip, so that the power amplifier chip is prevented from being burnt, as shown in fig. 6.
(6) The second tile type T/R component layer and the third microwave frequency conversion layer are connected with each other in a vertical radio frequency mode, the third microwave frequency conversion layer and the fourth digital baseband processing layer are connected with each other in a vertical radio frequency mode through the vertical connecting plug-in hair buttons, and the vertical feed structure adopts a low-frequency plug-in unit, as shown in figure 7.
Example (b):
a high-integration integrated radio frequency sensing array system is characterized in that an integrated radio frequency sensing array is composed of a width radiation array, a tile type T/R assembly, a microwave frequency conversion assembly, a digital baseband processing board, a fuzz button adapter board, a thermal control structural member and the like, the shape of the integrated radio frequency sensing array is shown in figure 8, and the overall explosion diagram of the integrated radio frequency sensing array is shown in figure 9. The method is implemented by the following steps:
(1) wide radiating array layer
The broadband radiation array is a tightly-coupled broadband wide-angle scanning dual-linear polarization antenna array. 8 multiplied by 8 broadband wide-angle scanning planar phased-array antenna units working in a frequency band of 2-10 GHz form a broadband radiation array within a scanning range of +/-60 DEG, the unit spacing is 13.5mm, and the broadband radiation array is in a dual-linear polarization mode, can realize polarization forms (left-handed, right-handed, vertical and horizontal) and the like through a polarization synthesizer, and forms a first layer of a comprehensive radio frequency sensor array, as shown in fig. 10 and 11.
The middle of the broadband radiation array and the tile type T/R assembly adopts wool buttons as a vertical transition connection mode, the wool buttons comprise 64 wool buttons, the diameter of each wool button is 0.5mm, the length of each wool button is 6mm, and the wool buttons are installed on a heat dissipation cold plate of the T/R assembly.
(2) Tile type T/R assembly
The integrated radio frequency sensing array comprises 4T/R assemblies, and each T/R assembly comprises 4 multiplied by 4 channels. The T/R component mainly comprises a GaAs chip layer, a fuzz button adapter plate, an SoC chip control layer and an outer structural component, and the shape structure of the T/R component is shown in figure 12.
An exploded view of the shingle T/R assembly is shown in FIG. 13. The SoC chip control layer and the GaAs chip layer of the T/R component are vertically interconnected through a hair button adapter plate, 16 hair buttons are mounted on the hair button adapter plate, the diameter of each hair button is 0.5mm, and the length of each hair button is 2 mm. And the SoC chip control layer is communicated with the baseband board through the low-frequency direct-insert pin header connector. The entire T/R assembly is encapsulated with an aluminum silicon shell in order to ensure reliability of the internal die.
The single-channel output power of the tile type T/R component is 5W, the working frequency range reaches 5 octaves, the bandwidth of the existing isolator cannot achieve 5 octaves, a power amplifier chip output power coupling detection circuit is designed in each T/R channel, the echo of an antenna unit is detected, and when the echo power reaches 1.25W, the power amplifier chip of the T/R channel is closed to prevent the power amplifier chip from being burnt due to output impedance mismatch of the power amplifier chip.
(3) Microwave frequency conversion assembly
The frequency conversion component is divided into an up-conversion channel and a down-conversion channel. The frequency conversion component is used for cascading the multiple microwave boards in a vertical interconnection mode, so that the frequency conversion component with the MEMS filter is miniaturized. The microwave frequency conversion assembly implementation block diagram is shown in fig. 14;
(4) digital baseband processing
The digital baseband processing comprises an ADC/DAC conversion circuit, an FPGA circuit, a DSP circuit and other functional circuits, and mainly achieves the functions of sampling, signal processing, beam pointing control, working state and mode monitoring and the like of digital baseband signals.
Those skilled in the art will appreciate that those matters not described in detail in the present specification are well known in the art.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (10)
1. A high-integration integrated radio frequency sensing array system is characterized in that a layered structure is adopted, and each layer sequentially comprises a broadband radiation array, a tile type T/R component, a microwave up-down frequency conversion channel, a digital baseband processing circuit and an echo power monitoring unit;
the broadband radiation array is used for receiving and transmitting wireless signals; the tile type T/R assembly is used for power amplification, numerical control attenuation, phase shift and power division; the microwave up-down frequency conversion channel is used for filtering, amplifying and mixing frequency and providing a frequency source and an electronic switch; the digital baseband processing circuit is used for signal waveform generation, beam forming, digital-to-analog conversion and signal acquisition;
the layers are vertically interconnected by radio frequency through fuzz buttons;
the echo power monitoring unit is electrically connected with the broadband radiation array and the tile type T/R assembly and used for monitoring the echo of each antenna of the broadband radiation array, and when the echo of any antenna is larger than a preset value, the power amplifier chip in the tile type T/R assembly corresponding to the antenna is turned off.
2. The integrated high-integration radio frequency sensing array system according to claim 1, wherein the broadband radiating array comprises M x N antenna elements, and a bandwidth f of each antenna element is in a range of f0≤f≤Pf0P is a positive integer and 3 is equal to or less than P, f0The lower limit of the operating frequency of each antenna unit.
3. The integrated high-integration radio frequency sensor array system according to claim 1, wherein the microwave up-down conversion channels are formed by stacking a plurality of microwave PCB boards, components on each microwave PCB board are interconnected through gold wire bonding to realize MMIC interconnection, and the microwave PCB boards on different layers are interconnected through holes to realize signal interconnection.
4. The integrated radio frequency sensing array system with high integration density as claimed in claim 1, wherein the echo power monitoring unit comprises a bidirectional coupler, a detector and a control unit; the echo of the antenna passes through the bidirectional coupler and is compared with a set value in the control unit after being detected by the detector, and when the echo exceeds the set value, the control unit controls the power amplifier chip to be switched off.
5. The integrated high-integration radio frequency sensing array system of claim 1, wherein the echo power monitoring unit monitors standing wave ratio or echo power of each antenna of the broadband radiation array.
6. The integrated RF sensor array system according to claim 5, wherein the preset value of standing wave ratio is 3 and the preset value of echo power is 1/4 of incident power.
7. The highly integrated RF sensor array system according to any of claims 1 to 6, wherein the power-down means is to power down the drain of the power-down chip.
8. A highly integrated RF sensor array system as claimed in any one of claims 1 to 6, wherein said broadband radiating array comprises 8 x 8 antenna elements operating in the 2 to 10GHz band, with a scanning range of ± 60 °.
9. A highly integrated RF sensor array system according to any of claims 1 to 6, wherein the broadband radiating array is dual-wire polarized using a polarization combiner.
10. The integrated RF sensor array system with high integration according to any one of claims 1 to 6, wherein the tile type T/R module comprises 4T/R modules, each T/R module comprises 4 x 4 channels; each T/R component comprises a GaAs chip layer, a fuzz button adapter plate and an SoC chip control layer; the SoC chip control layer and the GaAs chip layer are vertically interconnected through a fuzz button adapter plate.
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| CN112803898A (en) * | 2021-03-17 | 2021-05-14 | 成都瑞迪威科技有限公司 | High-integration-level frequency conversion channel assembly |
| CN112994760A (en) * | 2021-04-26 | 2021-06-18 | 成都雷电微晶科技有限公司 | Multi-beam tile type TR (transmitter-receiver) component with high integration degree |
| CN113517554A (en) * | 2021-08-11 | 2021-10-19 | 成都华芯天微科技有限公司 | Low-profile broadband dual-circularly-polarized phased array antenna system |
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| CN114285428A (en) * | 2021-12-17 | 2022-04-05 | 中国电子科技集团公司第三十八研究所 | Adjustable fuzz button array data receiving device and method |
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| CN112803898A (en) * | 2021-03-17 | 2021-05-14 | 成都瑞迪威科技有限公司 | High-integration-level frequency conversion channel assembly |
| CN112994760A (en) * | 2021-04-26 | 2021-06-18 | 成都雷电微晶科技有限公司 | Multi-beam tile type TR (transmitter-receiver) component with high integration degree |
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| CN115395989A (en) * | 2022-08-30 | 2022-11-25 | 北京天地一格科技有限公司 | High-dynamic self-adaptive control method, device, system and processing equipment |
| CN115395989B (en) * | 2022-08-30 | 2023-11-24 | 北京天地一格科技有限公司 | High dynamic self-adaptive control method, device, system and processing equipment |
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