CN112164646A - Wafer adjusting method, adjusting device, bonding control method and control device - Google Patents
Wafer adjusting method, adjusting device, bonding control method and control device Download PDFInfo
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Abstract
The application provides a wafer adjusting method, an adjusting device, a bonding control method and a control device. The wafer adjusting method comprises the following steps: deformation quantities of a plurality of structural areas of the wafer are obtained; determining the vacuum adsorption value of each adjusting area of the adjusting platform according to the deformation quantity, wherein the adjusting platform is used for placing a wafer; and controlling each adjusting area to absorb the corresponding structural area at the corresponding vacuum absorption value so as to reduce the deformation amount of at least part of the structural area. The method reduces the deformation amount of at least part of the structure area of the wafer by using different vacuum values, realizes the adjustment of at least part of the deformation area of the wafer, ensures that the adjusted wafer is basically flat, and relieves the adverse effect on other subsequent processes caused by larger deformation amount of the local area of the wafer.
Description
Technical Field
The present application relates to the field of semiconductors, and in particular, to a method and an apparatus for adjusting a wafer, a method and an apparatus for controlling bonding, a bonding system, a computer-readable storage medium, and a processor.
Background
In the processing procedure and processing process of the wafer, a large amount of stress is accumulated under the influence of a plurality of surface films and heat treatment, so that the wafer is bent and expanded to a certain degree, meanwhile, due to the difference of the layout design in the X direction and the Y direction, the bending and the expansion of the wafer in the X direction and the Y direction are not matched to a large extent, and the local stress of the wafer can bring a more uneven wafer shape. These factors cause large deformation in some regions of the wafer, which is not favorable for the subsequent bonding process.
The number of stacked layers of the thin films on the surface of the wafer is increased, the physical stress accumulated on the wafer is increased, the deformation of a local area is increased, two wafers are not overlapped in the bonding process, the electrical connection is broken, and the defect of high yield is caused.
Therefore, a method is needed to solve the problem that the deformation of some regions of the conventional wafer is large, which affects the subsequent processes.
The above information disclosed in this background section is only for enhancement of understanding of the background of the technology described herein and, therefore, certain information may be included in the background that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
Disclosure of Invention
The present disclosure provides a method and a device for adjusting a wafer, a method and a device for controlling bonding, a bonding system, a computer readable storage medium, and a processor, so as to solve the problem in the prior art that deformation of some regions of the wafer is large, which affects subsequent processes.
In order to achieve the above object, according to an aspect of the present application, there is provided a wafer conditioning method, including: deformation quantities of a plurality of structural areas of the wafer are obtained; determining the vacuum adsorption value of each adjusting area of an adjusting platform according to the deformation quantity, wherein the adjusting platform is used for placing the wafer; and controlling each adjusting area to adsorb the corresponding structure area at the corresponding vacuum adsorption value so as to reduce the deformation amount of at least part of the structure area.
Optionally, the obtaining the deformation amount of the plurality of structural regions of the wafer includes: acquiring an image of the wafer; determining the position information of each structural area in a preset direction according to the image, wherein the preset direction is the thickness direction of the wafer; and determining the deformation amount of each structural region according to the position information of each structural region.
Optionally, determining a deformation amount of each structural region according to the position information of each structural region includes: determining the structural area where the lowest point or the highest point in the preset direction is located as a target area; and obtaining the deformation quantity of other structural regions according to the difference between the position information of the target region and the position information of other structural regions, wherein the deformation quantity of the target region is 0.
Optionally, determining a vacuum absorption value of each adjustment region of the adjustment platform according to the deformation amount includes: determining the adjustment areas to be placed in the structural areas, wherein the structural areas correspond to the adjustment areas one to one; determining a predetermined suction force of the corresponding adjustment region according to the deformation amount, the predetermined suction force being used for sucking the structure region and reducing the deformation amount of the structure region in the case where the deformation amount of the structure region is greater than a predetermined value, the predetermined suction force being used for sucking the structure region in the case where the deformation amount of the structure region is less than or equal to the predetermined value; and determining the corresponding vacuum adsorption value according to the preset adsorption force.
Alternatively, in the case where the amount of deformation of the structure region is larger than a predetermined value, the predetermined adsorption force is used to adsorb the structure region and reduce the amount of deformation of the structure region to 0.
According to still another aspect of the present application, there is provided a method of controlling bonding of a wafer, including: adjusting the first wafer to be bonded by adopting any one of the adjusting methods; adjusting the second wafer to be bonded by adopting any one of the adjusting methods; controlling the first wafer to be bonded and the second wafer to be bonded to be aligned; and controlling the bonding of the aligned first wafer to be bonded and the aligned second wafer to be bonded.
According to another aspect of the application, an adjusting device for a wafer is provided, which includes an acquiring unit, a determining unit and an adsorbing unit, wherein the acquiring unit is used for acquiring deformation quantities of a plurality of structural regions of the wafer; the determining unit is used for determining the vacuum adsorption value of each adjusting area of the adjusting platform according to the deformation quantity, and the adjusting platform is used for placing the wafer; the adsorption unit is used for controlling each adjustment area to adsorb the corresponding structure area according to the corresponding vacuum adsorption value so as to reduce the deformation amount of at least part of the structure area.
According to another aspect of the present application, a control apparatus for bonding a wafer is provided, which includes a first adjusting unit, a second adjusting unit, a first control unit, and a second control unit, wherein the first adjusting unit is configured to adjust a first wafer to be bonded by using any one of the adjusting methods; the second adjusting unit is used for adjusting a second wafer to be bonded by adopting any one adjusting method; the first control unit is used for controlling the alignment of the first wafer to be bonded and the second wafer to be bonded; the second control unit is used for controlling the bonding of the aligned first wafer to be bonded and the aligned second wafer to be bonded.
According to still another aspect of the present application, there is provided a bonding system, comprising a bonding apparatus and a control apparatus, wherein the bonding apparatus comprises at least two adjustable platforms, and the adjustable platforms are used for placing and adsorbing wafers to be bonded; the control device is in communication connection with the bonding device and is used for executing the control method.
Optionally, the adjustment platform includes a plurality of adjustment regions, and each of the adjustment regions is correspondingly provided with a vacuum through hole.
Optionally, the bonding system further includes an image acquisition device, the image acquisition device is in communication connection with the control device, the image acquisition device is used for acquiring an image of the wafer to be bonded, and the control device determines the deformation amount of the wafer to be bonded according to the image.
According to another aspect of the present application, there is also provided a computer-readable storage medium including a stored program, wherein the program executes any one of the adjustment methods.
According to yet another aspect of the application, a processor for running a program is provided, wherein the program is run to perform any of the adjustment methods.
According to the wafer adjusting method, deformation quantities of a plurality of structure areas of the wafer are obtained, the vacuum adsorption value of each adjusting area of the adjusting platform is determined according to the deformation quantities, and the structure areas corresponding to the wafer are controlled to be adsorbed by the adjusting areas according to the vacuum adsorption values, so that the deformation quantities of at least part of the structure areas of the wafer are reduced by using different vacuum values, the adjustment of at least part of areas with deformation quantities of the wafer is realized, the adjusted wafer is ensured to be basically flat, and adverse effects on other subsequent processes caused by larger deformation quantities of local areas of the wafer are relieved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
fig. 1 is a schematic flow chart illustrating a wafer trimming method according to an embodiment of the present disclosure;
FIG. 2 shows a schematic diagram of an adjustment region partitioned according to an embodiment of the application;
FIG. 3 shows a schematic diagram of a partitioned adjustment region according to an embodiment of the application;
FIG. 4 is a schematic diagram of an apparatus for conditioning a wafer according to an embodiment of the present disclosure;
fig. 5 shows a schematic diagram of a control apparatus for bonding of wafers according to an embodiment of the present application;
FIG. 6 is a schematic diagram illustrating an image capture device capturing a wafer image according to an embodiment of the present disclosure; and
fig. 7 shows a schematic view of a wafer image captured according to an embodiment of the present application.
Wherein the figures include the following reference numerals:
10. an acquisition unit; 20. a determination unit; 30. an adsorption unit; 40. a first adjusting unit; 50. a second adjusting unit; 60. a first control unit; 70. a second control unit; 100. a first adjustment region; 101. a second adjustment region; 102. a shape sensor probe; 103. and (5) a wafer.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
As described in the background art, in the prior art, deformation of some regions of a wafer is large, which affects the subsequent bonding process, and in order to solve the above problems, the present application provides a method and an apparatus for adjusting a wafer, a method and an apparatus for controlling bonding, a control apparatus, a bonding system, a computer readable storage medium, and a processor.
In an exemplary embodiment of the present application, a method for adjusting a wafer is provided, as shown in fig. 1, including the following steps:
step S101: obtaining deformation quantities of a plurality of structural areas of the wafer;
step S102: determining the vacuum adsorption value of each adjusting area of an adjusting platform according to the deformation quantity, wherein the adjusting platform is used for placing the wafer;
step S103: and controlling each of the adjustment regions to absorb the corresponding structure region at the corresponding vacuum absorption value, thereby reducing the deformation amount of at least part of the structure region.
According to the adjusting method of the wafer, deformation quantities of a plurality of structure areas of the wafer are obtained, the vacuum adsorption value of each adjusting area of the adjusting platform is determined according to the deformation quantities, and the structure areas corresponding to the wafer are controlled to be adsorbed by the adjusting areas according to the vacuum adsorption values, so that the deformation quantities of at least part of the structure areas of the wafer are reduced by using different vacuum values, the adjustment of the areas of the wafer, in which the deformation quantities occur, is realized, the adjusted wafer is basically flat, and adverse effects on other subsequent processes caused by larger deformation quantities of local areas of the wafer are relieved.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer-executable instructions and that, although a logical order is illustrated in the flowcharts, in some cases, the steps illustrated or described may be performed in an order different than presented herein.
Specifically, the adjustment stage may be divided into two adjustment regions, and as shown in fig. 2, the deformation amount of the structure region corresponding to the wafer is adjusted by controlling the vacuum absorption values of the first adjustment region 100 and the second adjustment region 101. Of course, in order to effectively adjust the deformation amount of the plurality of structural regions of the wafer, the adjustment platform may be further divided into a plurality of adjustment regions, as shown in fig. 3 (fig. 3 shows a surface region of the adjustment platform on which the wafer is placed), so that the adjustment regions correspond to the structural regions of the wafer with different deformation amounts one by one, which is further beneficial to correspondingly adjust the plurality of structural regions of the wafer with different deformation amounts. Of course, the adjustment platform may be divided into adjustment regions in other shapes and other manners, and those skilled in the art may flexibly divide the adjustment regions according to actual adjustment needs.
In a specific embodiment of the present application, the obtaining deformation quantities of a plurality of structural regions of the wafer includes: acquiring an image of the wafer; determining position information of each structural area in a preset direction according to the image, wherein the preset direction is the thickness direction of the wafer; and determining the deformation amount of each structural region according to the position information of each structural region. By acquiring the image of the wafer, determining the position information of each structural area of the wafer in the preset direction according to the image, and determining the deformation amount of each structural area according to the position information, the deformation amount of each structural area of the wafer can be more accurately obtained, an accurate data base is provided for the subsequent adjustment of the deformation amount of each structural area of the wafer, and the better effect of the adjusted wafer is further ensured.
In another specific embodiment of the present application, determining the deformation amount of each of the structural regions according to the position information of each of the structural regions includes: determining the structural area where the lowest point or the highest point in the preset direction is located as a target area; and obtaining the amount of deformation of the other structural region based on a difference between the positional information of the target region and the positional information of the other structural region, wherein the amount of deformation of the target region is 0. The target area is determined in the preset direction, the target area is taken as the position of the deformation amount 0, and the position information of other structural areas is differed from the position information of the target area to obtain the deformation amount of other structural areas, so that the deformation amount of each structural area of the wafer can be more accurately obtained, and the flatness of the adjusted wafer is better.
In another specific embodiment of the present application, the determining the vacuum absorption value of each adjustment region of the adjustment platform according to the deformation amount includes: determining the adjustment areas to be placed in the structural areas, wherein the structural areas correspond to the adjustment areas one to one; determining a predetermined suction force of the adjustment region corresponding to the amount of deformation, the predetermined suction force being used to suck the structure region and reduce the amount of deformation of the structure region when the amount of deformation of the structure region is greater than a predetermined value, the predetermined suction force being used to suck the structure region when the amount of deformation of the structure region is less than or equal to the predetermined value; and determining the corresponding vacuum adsorption value according to the adsorption force. Determining the preset adsorption force corresponding to the adjustment area according to the deformation quantity by one-to-one correspondence between the structure areas and the adjustment area, determining whether the deformation quantity of each structure area is greater than a preset value, and determining that the structure areas need to be adjusted when the deformation quantity of each structure area is greater than the preset value, and adsorbing the structure areas by using the preset adsorption force; when the deformation quantity of the structure area exceeds the preset value, the structure area is adjusted by the adsorption force, the rapid adjustment of a local area with large deformation of the wafer is further ensured, the whole area of the wafer is basically flat, and other subsequent processes are facilitated.
In order to further ensure a better adjustment of the structure region with a larger amount of deformation and further ensure a smoother overall area of the wafer, according to a specific embodiment of the present application, in case the amount of deformation of the structure region is larger than a predetermined value, the predetermined suction force is used to suck the structure region and reduce the amount of deformation of the structure region to 0.
In another exemplary embodiment of the present application, a method for controlling bonding of a wafer is provided, including: adjusting the first wafer to be bonded by adopting the adjusting method; adjusting the second wafer to be bonded by adopting the adjusting method; controlling the first wafer to be bonded and the second wafer to be bonded to be aligned; and controlling the aligned first wafer to be bonded and the aligned second wafer to be bonded.
In the method for controlling the bonding of the wafers, the first wafer to be bonded is adjusted by the adjusting method, and the second wafer to be bonded is adjusted by the adjusting method, so that the problem that the deformation amount of the local area of the two wafers to be bonded is large is solved, the bending of the wafers is further relieved, the flatness of the two wafers to be bonded is ensured, the adjusted first wafer to be bonded and the second wafer to be bonded are controlled to be aligned and bonded, the bonding coincidence rate of the two wafers after the deformation amount is adjusted is high, the problem of electric connection disconnection caused by non-coincidence is avoided, and the bonding yield is ensured.
The embodiment of the present application further provides a device for adjusting a wafer, and it should be noted that the device for adjusting a wafer according to the embodiment of the present application may be used to execute the method for adjusting a wafer according to the embodiment of the present application. The following describes an adjustment apparatus for a wafer according to an embodiment of the present application.
Fig. 4 is a schematic view of an adjusting apparatus for a wafer according to an embodiment of the present disclosure, and as shown in fig. 4, the adjusting apparatus for a wafer includes an obtaining unit 10, a determining unit 20, and a suction unit 30, where the obtaining unit 10 is configured to obtain deformation amounts of a plurality of structural regions of the wafer; the determining unit 20 is configured to determine a vacuum absorption value of each adjusting region of an adjusting stage on which the wafer is placed according to the deformation amount; the suction unit 30 is configured to control each of the adjustment regions to suck the corresponding structure region at the corresponding vacuum suction value, so as to reduce a deformation amount of at least a part of the structure region.
According to the adjusting device for the wafer, the deformation amount of the plurality of structure areas of the wafer is obtained through the obtaining unit, the determining unit determines the vacuum adsorption value of each adjusting area of the adjusting platform according to the deformation amount, and the adsorption unit controls each adjusting area to adsorb the corresponding structure area according to the adsorption value, so that the purpose of adjusting the deformation amount of at least part of the structure areas is achieved, the deformation problem of the wafer is relieved, the adjusted wafer is guaranteed to be basically flat, and the good yield of the subsequent process is guaranteed.
The wafer adjusting apparatus includes a processor and a memory, the acquiring unit 10, the determining unit 20, the adsorbing unit 30, and the like are stored in the memory as program units, and the processor executes the program units stored in the memory to implement corresponding functions.
The processor comprises a kernel, and the kernel calls the corresponding program unit from the memory. One or more than one inner core can be set, and the problem that deformation of certain areas of the wafer is large and subsequent bonding process is influenced in the prior art is solved by adjusting inner core parameters.
The memory may include volatile memory in a computer readable medium, Random Access Memory (RAM) and/or nonvolatile memory such as Read Only Memory (ROM) or flash memory (flash RAM), and the memory includes at least one memory chip.
Specifically, the adjustment stage may be divided into two adjustment regions, and as shown in fig. 2, the deformation amount of the structure region corresponding to the wafer is adjusted by controlling the vacuum absorption values of the first adjustment region 100 and the second adjustment region 101. Of course, in order to effectively adjust the deformation amount of the plurality of structural regions of the wafer, the adjustment platform may be further divided into a plurality of adjustment regions, as shown in fig. 3, so that the adjustment regions correspond to the structural regions of different deformation amounts of the wafer one to one, which is further beneficial to correspondingly adjusting the plurality of structural regions of different deformation amounts of the wafer. Of course, the adjustment platform may be divided into adjustment regions in other shapes and other manners, and those skilled in the art may flexibly divide the adjustment regions according to actual adjustment needs.
According to a specific embodiment of the present application, the obtaining unit includes an obtaining module, a first determining module, and a second determining module. The acquisition module is used for acquiring the image of the wafer; the first determining module is configured to determine, according to the image, position information of each of the structural regions in a predetermined direction, where the predetermined direction is a thickness direction of the wafer; the second determining module is configured to determine a deformation amount of each of the structural regions according to the position information of each of the structural regions. By acquiring the image of the wafer, determining the position information of each structural area of the wafer in the preset direction according to the image, and determining the deformation amount of each structural area according to the position information, the deformation amount of each structural area of the wafer can be more accurately obtained, an accurate data base is provided for the subsequent adjustment of the deformation amount of each structural area of the wafer, and the better effect of the adjusted wafer is further ensured.
According to another specific embodiment of the present application, the second determining module includes a determining submodule and a differentiating submodule, wherein the determining submodule is configured to determine that the structural area where the lowest point or the highest point is located in the predetermined direction is a target area; the difference generation module is configured to generate a difference between the position information of the target region and the position information of the other structural region to obtain a deformation amount of the other structural region, where the deformation amount of the target region is 0. The target area is determined in the preset direction, the target area is taken as the position of the deformation amount 0, and the position information of other structural areas is differed from the position information of the target area to obtain the deformation amount of other structural areas, so that the deformation amount of each structural area of the wafer can be more accurately obtained, and the flatness of the adjusted wafer is better.
In yet another specific embodiment of the present application, the determining unit includes a third determining module, an adsorbing module, and a fourth determining module, where the third determining module is configured to determine the adjustment regions where the structural regions are to be placed, and the structural regions correspond to the adjustment regions one to one; the suction module is configured to determine a predetermined suction force of the adjustment region corresponding to the amount of deformation, the predetermined suction force being used to suck the structure region and reduce the amount of deformation of the structure region when the amount of deformation of the structure region is greater than a predetermined value, the predetermined suction force being used to suck the structure region when the amount of deformation of the structure region is less than or equal to the predetermined value; the fourth determining module is used for determining the corresponding vacuum adsorption value according to the adsorption force. Determining the preset adsorption force corresponding to the adjustment area according to the deformation quantity by one-to-one correspondence between the structure areas and the adjustment area, determining whether the deformation quantity of each structure area is greater than a preset value, and determining that the structure areas need to be adjusted when the deformation quantity of each structure area is greater than the preset value, and adsorbing the structure areas by using the preset adsorption force; when the deformation quantity of the structure area exceeds the preset value, the structure area is adjusted by the adsorption force, the rapid adjustment of a local area with large deformation of the wafer is further ensured, the whole area of the wafer is basically flat, and other subsequent processes are facilitated.
In order to further ensure better adjustment of the structural region with larger deformation amount and further ensure that the whole region of the wafer is more flat, according to another specific embodiment of the present application, the suction module is further configured to, in a case that the deformation amount of the structural region is greater than a predetermined value, suction the structural region with the predetermined suction force and reduce the deformation amount of the structural region to 0.
In still another exemplary embodiment of the present application, as shown in fig. 5, there is provided a control apparatus for bonding a wafer, including a first adjusting unit 40, a second adjusting unit 50, a first control unit 60, and a second control unit 70. The first adjusting unit 40 is configured to adjust the first wafer to be bonded by using the adjusting method; the second adjusting unit 50 is used for adjusting the second wafer to be bonded by adopting the adjusting method; the first control unit 60 is configured to control the first wafer to be bonded and the second wafer to be bonded to be aligned; the second control unit 70 is configured to control bonding of the aligned first wafer to be bonded and the aligned second wafer to be bonded.
The control device for wafer bonding adjusts the first wafer to be bonded and the second wafer to be bonded by the first adjusting unit and the second adjusting unit by adopting the adjusting method, controls the first wafer to be bonded and the second wafer to be bonded to be aligned and bonded by the first control unit and the second control unit, relieves the larger deformation of the local areas of the first wafer to be bonded and the second wafer to be bonded before aligned and bonded, ensures that the whole of the first wafer to be bonded and the second wafer to be bonded is basically flat, and further ensures the quality of the wafer after aligned and bonded.
In another exemplary embodiment of the present application, a bonding system is provided, which includes a bonding apparatus and a control apparatus, wherein the bonding apparatus includes at least two adjustable stages, and the adjustable stages are used for placing and adsorbing a wafer to be bonded; the control device is in communication connection with the bonding device and is used for executing the control method.
The bonding system places and adsorbs the wafer to be bonded through the at least two adjusting platforms of the bonding device, and the control device executes the control method, so that the wafer which is adjusted and bonded by the bonding system is basically not bent and deformed, the bonding coincidence rate is high, the electrical property of the bonded wafer is good, and the bonding yield is high.
According to an embodiment of the present application, the adjustment platform includes a plurality of adjustment regions, and each of the adjustment regions is correspondingly provided with a vacuum through hole. By adjusting the vacuum value of the vacuum through hole of the adjusting area, the deformation amount of the structure area of the wafer corresponding to each adjusting area is adjusted, and the adjusted wafer is further ensured to be basically flat and not deformed.
According to another embodiment of the present application, the bonding system further includes an image capturing device, the image capturing device is in communication with the control device, the image capturing device is configured to capture an image of the wafer to be bonded, and the control device determines the deformation amount of the wafer to be bonded according to the image. The image acquisition device is used for acquiring the image of the wafer to be bonded, and the control device is used for determining the deformation amount of the wafer to be bonded according to the image, so that the deformation amount of different areas of the wafer is adjusted by corresponding vacuum adsorption, and the deformation amount of at least part of structural areas is further adjusted.
Specifically, the image capturing device may be a shape sensor probe, and the shape sensor probe captures a deformation amount of the wafer. As shown in fig. 6, the shape sensor probe 102 acquires an image of the wafer 103 as shown in fig. 7 by capturing the wafer 103, and the control device determines the amount of deformation of the wafer 103 according to the image, thereby adjusting at least a portion of the amount of deformation of the wafer. Of course, the image capturing device may be other machines or apparatuses. In particular, the shape sensor probe may in particular be a shape recognition sensor.
An embodiment of the present invention provides a storage medium, on which a program is stored, and the program, when executed by a processor, implements the wafer adjusting method described above.
The embodiment of the invention provides a processor, which is used for running a program, wherein the program executes the wafer adjusting method during running.
The embodiment of the invention provides equipment, which comprises a processor, a memory and a program which is stored on the memory and can run on the processor, wherein when the processor executes the program, at least the following steps are realized:
step S101: obtaining deformation quantities of a plurality of structural areas of the wafer;
step S102: determining the vacuum adsorption value of each adjusting area of an adjusting platform according to the deformation quantity, wherein the adjusting platform is used for placing the wafer;
step S103: and controlling each of the adjustment regions to absorb the corresponding structure region at the corresponding vacuum absorption value, thereby reducing the deformation amount of at least part of the structure region.
The device herein may be a server, a PC, a PAD, a mobile phone, etc.
The present application further provides a computer program product adapted to perform a program of initializing at least the following method steps when executed on a data processing device:
step S101: obtaining deformation quantities of a plurality of structural areas of the wafer;
step S102: determining the vacuum adsorption value of each adjusting area of an adjusting platform according to the deformation quantity, wherein the adjusting platform is used for placing the wafer;
step S103: and controlling each of the adjustment regions to absorb the corresponding structure region at the corresponding vacuum absorption value, thereby reducing the deformation amount of at least part of the structure region.
In the above embodiments of the present invention, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In the embodiments provided in the present application, it should be understood that the disclosed technology can be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the above-described division of the units may be a logical division, and in actual implementation, there may be another division, for example, multiple units or components may be combined or may be integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, units or modules, and may be in an electrical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit may be stored in a computer-readable storage medium if it is implemented in the form of a software functional unit and sold or used as a separate product. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the above methods according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic or optical disk, and other various media capable of storing program codes.
From the above description, it can be seen that the above-described embodiments of the present application achieve the following technical effects:
1) the application provides a method for adjusting a wafer, which includes the steps of obtaining deformation quantities of a plurality of structure areas of the wafer, determining vacuum adsorption values of the adjustment areas of an adjustment platform according to the deformation quantities, and controlling the adjustment areas to adsorb the structure areas corresponding to the wafer according to the vacuum adsorption values, so that the deformation quantities of at least part of the structure areas of the wafer are reduced by using different vacuum values, the adjustment of at least part of areas of the wafer where the deformation quantities occur is realized, the adjusted wafer is guaranteed to be basically flat, and adverse effects on other subsequent processes caused by larger deformation quantities of local areas of the wafer are relieved.
2) The method for controlling the bonding of the wafers comprises the steps of adjusting the first wafer to be bonded by the adjusting method, adjusting the second wafer to be bonded by the adjusting method, relieving the problem that deformation of local areas of the two wafers to be bonded is large, further relieving bending of the wafers, ensuring the flatness of the two wafers to be bonded, and controlling alignment and bonding of the adjusted first wafer to be bonded and the second wafer to be bonded, so that bonding coincidence rate of the two wafers after deformation adjustment is high, the problem of electric connection disconnection caused by non-coincidence is avoided, and bonding yield is ensured.
3) The application provides an adjusting device of a wafer, the adjusting device of the wafer acquires deformation quantities of a plurality of structure areas of the wafer through the acquiring unit, the determining unit determines vacuum adsorption values of the adjustment areas of the adjusting platform according to the deformation quantities, and according to the adsorption values, the adsorption units control the corresponding structure areas to be adsorbed by the adjustment areas, so that the purpose of adjusting the deformation quantities of at least part of the structure areas is achieved, the deformation problem of the wafer is relieved, the basically flat and smooth wafer after adjustment is guaranteed, and the good yield of the subsequent process is guaranteed.
4) The application also provides a control device for wafer bonding, the control device for wafer bonding adjusts the first wafer to be bonded and the second wafer to be bonded by the first adjusting unit and the second adjusting unit by adopting the adjusting method, and controls the first wafer to be bonded and the second wafer to be bonded to be aligned and bonded by the first control unit and the second control unit, so that the larger deformation amount of the local areas of the first wafer to be bonded and the second wafer to be bonded before aligned bonding is relieved, the whole of the first wafer to be bonded and the second wafer to be bonded is basically flat, and the quality of the wafer after aligned bonding is further ensured.
5) The application also provides a bonding system, the bonding system is used for placing and adsorbing the wafer to be bonded through at least two adjusting platforms of the bonding device, the control device executes the control method, the wafers which are adjusted and bonded through the bonding system are basically not bent and deformed, the bonding coincidence rate is high, the electrical performance of the bonded wafers is good, and the bonding yield is high.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (13)
1. A method for adjusting a wafer, comprising:
deformation quantities of a plurality of structural areas of the wafer are obtained;
determining the vacuum adsorption value of each adjusting area of an adjusting platform according to the deformation quantity, wherein the adjusting platform is used for placing the wafer;
and controlling each adjusting area to adsorb the corresponding structure area at the corresponding vacuum adsorption value so as to reduce the deformation amount of at least part of the structure area.
2. The method of claim 1, wherein obtaining the amount of deformation of the plurality of structural regions of the wafer comprises:
acquiring an image of the wafer;
determining the position information of each structural area in a preset direction according to the image, wherein the preset direction is the thickness direction of the wafer;
and determining the deformation amount of each structural region according to the position information of each structural region.
3. The method of claim 2, wherein determining the amount of deformation of each of the structural regions based on the positional information of each of the structural regions comprises:
determining the structural area where the lowest point or the highest point in the preset direction is located as a target area;
and obtaining the deformation quantity of other structural regions according to the difference between the position information of the target region and the position information of other structural regions, wherein the deformation quantity of the target region is 0.
4. The method of claim 1, wherein determining a vacuum pick-up value for each conditioning region of the conditioning stage based on the amount of deformation comprises:
determining the adjustment areas to be placed in the structural areas, wherein the structural areas correspond to the adjustment areas one to one;
determining a predetermined suction force of the corresponding adjustment region according to the deformation amount, the predetermined suction force being used for sucking the structure region and reducing the deformation amount of the structure region in the case where the deformation amount of the structure region is greater than a predetermined value, the predetermined suction force being used for sucking the structure region in the case where the deformation amount of the structure region is less than or equal to the predetermined value;
and determining the corresponding vacuum adsorption value according to the preset adsorption force.
5. The method according to claim 4, wherein the predetermined suction force is used to suck the structure region and reduce the deformation amount of the structure region to 0 in a case where the deformation amount of the structure region is larger than a predetermined value.
6. A method for controlling bonding of a wafer, comprising:
adjusting a first wafer to be bonded by using the adjusting method of any one of claims 1 to 5;
adjusting a second wafer to be bonded by using the adjusting method of any one of claims 1 to 5;
controlling the first wafer to be bonded and the second wafer to be bonded to be aligned;
and controlling the bonding of the aligned first wafer to be bonded and the aligned second wafer to be bonded.
7. An apparatus for adjusting a wafer, comprising:
the acquiring unit is used for acquiring deformation quantities of a plurality of structural areas of the wafer;
the determining unit is used for determining the vacuum adsorption value of each adjusting area of the adjusting platform according to the deformation quantity, and the adjusting platform is used for placing the wafer;
and the adsorption unit is used for controlling each adjusting area to adsorb the corresponding structure area according to the corresponding vacuum adsorption value so as to reduce the deformation amount of at least part of the structure area.
8. An apparatus for controlling bonding of a wafer, comprising:
a first adjusting unit, configured to adjust a first wafer to be bonded by using the adjusting method of any one of claims 1 to 5;
a second adjusting unit, configured to adjust a second wafer to be bonded by using the adjusting method of any one of claims 1 to 5;
the first control unit is used for controlling the alignment of the first wafer to be bonded and the second wafer to be bonded;
and the second control unit is used for controlling the bonding of the aligned first wafer to be bonded and the aligned second wafer to be bonded.
9. A bonding system, comprising:
the bonding device comprises at least two adjusting platforms, wherein the adjusting platforms are used for placing and adsorbing wafers to be bonded;
control means, communicatively coupled to the bonding apparatus, for performing the control method of claim 6.
10. The bonding system of claim 9, wherein the adjustment platform includes a plurality of adjustment regions, each of the adjustment regions having a corresponding vacuum through hole.
11. The bonding system of claim 9, further comprising:
the image acquisition device is in communication connection with the control device and is used for acquiring images of the wafers to be bonded, and the control device determines deformation of the wafers to be bonded according to the images.
12. A computer-readable storage medium characterized in that the storage medium includes a stored program, wherein the program executes the adjustment method of any one of claims 1 to 5.
13. A processor, characterized in that the processor is configured to run a program, wherein the program is configured to execute the adjusting method according to any one of claims 1 to 5 when running.
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