CN112161695A - Flexible vibration sensor and manufacturing method thereof - Google Patents
Flexible vibration sensor and manufacturing method thereof Download PDFInfo
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Abstract
The flexible vibration sensor comprises a vibration sensitive layer, electrodes and a cavity structure layer, wherein the vibration sensitive layer is a polymer film with a vibration sensitive area, the vibration sensitive area comprises a porous graphene film, two ends of the porous graphene film are respectively connected with the electrodes, the cavity structure layer is made of a flexible polymer material, and the vibration sensitive layer and the cavity structure layer are fixed together and enable the vibration sensitive area to be suspended above a cavity of the cavity structure layer. The flexible vibration sensor has the advantages of high sensitivity and soft sensing structure, is easy to install on the surface needing to detect vibration, and has advantages in cost and structural stability.
Description
Technical Field
The invention relates to the field of vibration sensors, in particular to a flexible vibration sensor and a manufacturing method thereof.
Background
In recent years, with the wide application of various sensors in wearable devices and the rapid development of microelectronics, flexible electronics, nanomaterial science and micro-nano processing technology thereof, modern sensor technology has entered a novel sensor stage with typical characteristics of flexibility, multifunction, wearability and networking, and higher requirements are provided for the miniaturization, flexibility and stability of sensing materials and devices. The flexible sensor generally has a flexible substrate, overcomes the defects of easy deformation, inextensible bending and the like of the traditional rigid sensor, and can be integrated on flexible tissues such as human skin to form a wearable flexible electronic device.
The above background disclosure is only for the purpose of assisting understanding of the inventive concept and technical solutions of the present invention, and does not necessarily belong to the prior art of the present patent application, and should not be used for evaluating the novelty and inventive step of the present application in the case that there is no clear evidence that the above content is disclosed at the filing date of the present patent application.
Disclosure of Invention
The main purpose of the present invention is to overcome the disadvantages of the prior art, and to provide a flexible vibration sensor and a method for manufacturing the same, which have the advantages of high sensitivity, soft sensing structure, easy installation on the surface to be detected, and cost and structural stability.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a flexible vibration sensor, includes vibration sensitive layer, electrode and cavity structural layer, the polymer film of vibration sensitive layer for having vibration sensitive area, vibration sensitive area contains porous graphene film, the both ends of porous graphene film are connected respectively the electrode, the cavity structural layer is flexible polymer material, vibration sensitive layer with the cavity structural layer is fixed together and is makeed vibration sensitive area unsettled in on the cavity of cavity structural layer.
Further:
the cavity structure layer comprises a substrate and side wall parts connected to two sides of the substrate, the substrate and the side wall parts form a groove structure, the vibration sensitive layer covers the top end of the groove structure, and the vibration sensitive area is arranged in the center of the top end along the length direction of the groove structure.
The substrate and the side wall part are connected together or are of an integrally formed structure.
The material of the cavity structure layer is SU-8 or polymethyl methacrylate, and the thickness is preferably 10-500 μm.
The vibration sensitive layer is adhered or bonded with the cavity structural layer.
The porous graphene film is surrounded by the polymer film.
The porous graphene film forms at least one pattern of a straight line shape, a snake shape and a vortex line shape, more preferably, the line width of the pattern is 20-4000 μm, and more preferably, the width of the corner of the snake shape is 2-4 times of the line width; preferably, the porosity of the porous graphene film is 25% -65%; preferably, the thickness of the porous graphene thin film is 40-200 μm.
The polymer film is a polyimide or polyetherimide film, and the porous graphene film is a laser-induced graphene film.
A method of making the flexible vibration sensor, comprising the steps of:
s1, preparing a polyimide film or a polyetherimide film;
s2, ablating the polyimide film or the polyetherimide film through laser, and inducing to generate a laser-induced graphene film to form a vibration sensitive area;
s3, manufacturing an electrode connected with the vibration sensitive area on the polyimide film or the polyetherimide film;
s4, manufacturing a cavity structure layer, preferably, the cavity structure layer is a groove structure comprising a substrate and a side wall part, and the substrate and the side wall part are formed through SU-8 photoetching technology or are formed into an integral structure through a polymethyl methacrylate hot-pressing mode;
and S5, bonding or adhering the polyimide film or polyetherimide film with the laser-induced graphene film of the manufactured electrode and the cavity structure layer in a hot pressing or gluing mode to form the flexible vibration sensor.
Further, in step S2, the laser is a blue laser, preferably, having a wavelength of 445nm ± 5nm and a power of 0.8W to 3.8W; preferably, the relative movement rate of the laser ablated polymer film is 0.2mm/s to 200 mm/s.
The invention has the following beneficial effects:
the flexible vibration sensor is provided with the vibration sensitive layer and the cavity structure layer, the vibration sensitive layer is a polymer film with a vibration sensitive area, the vibration sensitive area comprises a porous graphene film, the cavity structure layer is made of a flexible polymer material, and the vibration sensitive area is suspended above the cavity of the cavity structure layer.
Drawings
FIG. 1 is a schematic structural diagram of a flexible vibration sensor according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a flexible vibration sensor in accordance with an embodiment of the present invention;
fig. 3 is an exemplary graph of vibration signals measured by a sensor manufactured according to an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below. It should be emphasized that the following description is merely exemplary in nature and is not intended to limit the scope of the invention or its application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. In addition, the connection may be for either a fixed or coupled or communicating function.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the embodiments of the present invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be in any way limiting of the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Referring to fig. 1 and 2, an embodiment of the present invention provides a flexible vibration sensor, including a vibration sensitive layer 2, an electrode 5, and a cavity structure layer (for example, may include a substrate 4 and a sidewall portion 3), where the vibration sensitive layer 2 is a polymer film with a vibration sensitive region, the vibration sensitive region includes a porous graphene film 1, the porous graphene film 1 may be formed into various patterns according to actual needs, two ends of the porous graphene film 1 are respectively connected to the electrode 5, the cavity structure layer is a flexible polymer material, and the vibration sensitive layer 2 and the cavity structure layer are fixed together and make the vibration sensitive region suspend above a cavity of the cavity structure layer.
In the working process, when the flexible vibration sensor is subjected to vibration action, the suspended polymer film deforms, and the porous graphene film in the vibration sensitive area converts the deformation of the film into resistance change. By measuring the resistance change of the porous graphene film, the vibration signal received by the vibration sensor can be measured. The flexible vibration sensor provided by the embodiment of the invention has the advantages of high sensitivity brought by graphene, has a soft sensing structure, is easy to install on the surface needing to detect vibration, can be particularly conveniently and stably attached to various curved surfaces for vibration measurement, and has the advantages of high sensitivity, good structural stability, easiness in processing, low cost and the like.
In a preferred embodiment, the polymer film is a polyimide or polyetherimide film, and the porous graphene film 1 is a laser-induced graphene film formed on the polyimide or polyetherimide film by a laser-induced method. The porous graphene film 1 has the characteristics of looseness and porosity. In a preferred embodiment, the material of the cavity structure layer is SU-8 or polymethyl methacrylate.
In a preferred embodiment, the cavity structure layer comprises a substrate 4 and side wall parts 3 connected to two sides of the substrate 4, the substrate 4 and the side wall parts 3 form a groove structure, the vibration sensitive layer 2 covers the top end of the groove structure, and the vibration sensitive area is arranged in the center of the top end along the length direction of the groove structure.
Referring to fig. 1 and 2, in one embodiment, a flexible vibration sensor includes a sensor upper layer composed of an electrode 5 and a vibration sensitive layer 2 with a vibration sensitive area, and a cavity structure layer of a substrate 4 and a sidewall portion 3 formed by a flexible polymer material such as SU-8, wherein the vibration sensitive layer 2 can be made of polyimide or polyetherimide, and the vibration sensitive area is embedded with a porous graphene film 1. Preferably, the porous graphene thin film 1 is formed by using laser ablation of polyimide or polyetherimide.
The electrode may include porous graphene 1, an electrode formed of conductive silver paste 5, and the like. The cavity region 3 and the substrate region 4 may be a tightly connected double-layer structure.
In a preferred embodiment, the porosity of the porous graphene thin film 1 is 25% to 65%.
In a preferred embodiment, the thickness of the porous graphene thin film 1 is 40-200 μm.
In a preferred embodiment, the porous graphene thin film 1 is formed in at least one pattern of a serpentine shape, a spiral shape, and a linear shape. In a more preferred embodiment, the line width of the pattern of the porous graphene thin film 1 is 20 to 4000 μm.
In a specific preferred embodiment, the porous graphene thin film 1 adopts a serpentine pattern, and the width of the corners of the serpentine pattern is 2 to 4 times the line width.
In other embodiments, a method of making the flexible vibration sensor includes the steps of:
s1, preparing a polyimide film or a polyetherimide film;
s2, ablating the polyimide film or the polyetherimide film through laser, and inducing to generate a laser-induced graphene film to form a vibration sensitive area; preferably, the wavelength of the laser is 445nm +/-5 nm, and the power is adjustable from 0.8W to 3.8W; more preferably, the laser is a blue laser having a wavelength of 445 nm; in a more preferred embodiment, the relative motion rate of the laser ablated polymer film is from 0.2mm/s to 200 mm/s;
s3, manufacturing an electrode connected with the vibration sensitive area on the polyimide film or the polyetherimide film;
s4, manufacturing a cavity structure layer, preferably, the cavity structure layer is a groove structure comprising a substrate and a side wall part, the substrate and the side wall part are formed into a compact double-layer structure through SU-8 photoetching technology, or an integrated structure is formed through polymethyl methacrylate hot pressing;
and S5, bonding or adhering the polyimide film or polyetherimide film with the laser-induced graphene film of the manufactured electrode and the cavity structure layer in a hot pressing or gluing mode to form the flexible vibration sensor.
Specific embodiments are further described below in conjunction with the appended drawings.
As shown in fig. 1 and fig. 2, the embodiment of the sensor includes a vibration sensitive layer 2 with a vibration sensitive area, a cavity structure layer composed of a sidewall portion 3 and a substrate 4, and an electrode 5, wherein the main material of the vibration sensitive layer 2 is a polymer film (such as polyimide or polyetherimide), and a porous graphene film 1 is disposed on the vibration sensitive area. A cross-sectional view of the vibration sensitive area is shown in fig. 2. The porous graphene film patterns of different vibration sensitive areas can be selected according to requirements, such as straight lines, serpentine lines or spiral lines, so as to measure signals with different characteristics. Preferably, the porous graphene thin film has a porosity of 25% to 65%, a thickness of 40 to 200 μm, and more preferably a thickness of 40 μm. The line width of the porous graphene film pattern is 20 micrometers to 4mm, and can be selected according to the precision of a laser. The serpentine pattern has a corner width of 2 to 4 times the line width. The electrode 5 can select various electrode connection modes such as conductive metal, a thin film connector and the like according to different interface modes of an external circuit.
The process of making the flexible vibration sensor of this embodiment includes:
covering a polyimide film on the surface of the silicon wafer;
ablating the polyimide film through blue laser to generate a laser-induced graphene film in an induced manner;
the cavity body and the flexible substrate can form a double-layer structure through an SU-8 photoetching process or form an integrated structure through a polymethyl methacrylate metal mold hot-pressing mode;
stripping the polyimide film with the laser-induced graphene film from a silicon wafer, and manufacturing an electrode on the exposed surface of the laser-induced graphene film;
and bonding the polyimide film with the laser-induced graphene film of the manufactured electrode with a cavity structure in a hot pressing or gluing mode to form the flexible vibration sensor.
In this embodiment, the porous graphene film 1 is obtained by directly ablating the polyimide film of the vibration sensitive layer 2 with laser, and forms an integral structure with the polyimide film that is not ablated with laser. Conductive silver paste can be coated on one part of the porous graphene film 1, and then the electrode 5 is obtained through baking and curing.
The vibration frequency range of the vibration sensor of the present embodiment is 0 to 1000 Hz. An example of an 800Hz vibration signal measured using the flexible vibration sensor is shown in figure 3.
The background of the present invention may contain background information related to the problem or environment of the present invention and does not necessarily describe the prior art. Accordingly, the inclusion in the background section is not an admission of prior art by the applicant.
The foregoing is a more detailed description of the invention in connection with specific/preferred embodiments and is not intended to limit the practice of the invention to those descriptions. It will be apparent to those skilled in the art that various substitutions and modifications can be made to the described embodiments without departing from the spirit of the invention, and these substitutions and modifications should be considered to fall within the scope of the invention. In the description herein, references to the description of the term "one embodiment," "some embodiments," "preferred embodiments," "an example," "a specific example," or "some examples" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. Although embodiments of the present invention and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the scope of the claims.
Claims (10)
1. The utility model provides a flexible vibration sensor, its characterized in that, includes vibration sensitive layer, electrode and cavity structural layer, the polymer film of vibration sensitive layer for having vibration sensitive area, vibration sensitive area contains porous graphene film, the both ends of porous graphene film are connected respectively the electrode, the cavity structural layer is flexible polymer material, vibration sensitive layer with the cavity structural layer is together fixed and make vibration sensitive area unsettled in on the cavity of cavity structural layer.
2. The flexible vibration sensor of claim 1 wherein the cavity structure layer comprises a base and sidewall portions attached to opposite sides of the base, the base and sidewall portions forming a recess structure, the vibration sensitive layer overlying a top end of the recess structure, the vibration sensitive region being disposed centrally on the top end along a length of the recess structure.
3. The flexible vibration sensor of claim 2 wherein the substrate is attached to the sidewall portion or is a unitary structure.
4. A flexible vibration sensor according to any of claims 1 to 3, wherein the material of the cavity structure layer is SU-8 or polymethylmethacrylate, preferably 10-500 μm thick.
5. A flexible vibration sensor according to any of claims 1 to 4, wherein the vibration sensitive layer is bonded or bonded to the cavity-structure layer.
6. The flexible vibration sensor as claimed in any one of claims 1 to 5, wherein the porous graphene film is surrounded by the polymer film.
7. The flexible vibration sensor according to any one of claims 1 to 6, wherein preferably the porous graphene thin film forms at least one pattern of a straight line shape, a serpentine shape and a spiral line shape, more preferably the pattern has a line width of 20 to 4000 μm, more preferably the serpentine pattern has a corner width of 2 to 4 times the line width; preferably, the porosity of the porous graphene film is 25% -65%; preferably, the thickness of the porous graphene thin film is 40-200 μm.
8. The flexible vibration sensor as claimed in any one of claims 1 to 7, wherein the polymer film is a polyimide or polyetherimide film and the porous graphene film is a laser-induced graphene film.
9. A method of making a flexible vibration sensor according to claim 8, comprising the steps of:
s1, preparing a polyimide film or a polyetherimide film;
s2, ablating the polyimide film or the polyetherimide film through laser, and inducing to generate a laser-induced graphene film to form a vibration sensitive area;
s3, manufacturing an electrode connected with the vibration sensitive area on the polyimide film or the polyetherimide film;
s4, manufacturing a cavity structure layer, preferably, the cavity structure layer is a groove structure comprising a substrate and a side wall part, and the substrate and the side wall part are formed through SU-8 photoetching technology or are formed into an integral structure through a polymethyl methacrylate hot-pressing mode;
and S5, bonding or adhering the polyimide film or polyetherimide film with the laser-induced graphene film of the manufactured electrode and the cavity structure layer in a hot pressing or gluing mode to form the flexible vibration sensor.
10. The flexible vibration sensor according to claim 9, wherein in step S2, the laser is a blue laser, preferably having a wavelength of 445nm ± 5nm and a power of 0.8W to 3.8W; preferably, the relative movement rate of the laser ablated polymer film is 0.2mm/s to 200 mm/s.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115234697A (en) * | 2022-08-11 | 2022-10-25 | 苏州协昌环保科技股份有限公司 | Electromagnetic pulse valve |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296991A (en) * | 2013-04-28 | 2013-09-11 | 电子科技大学 | Graphene high-frequency nanomechanical resonator based on flexible substrate and preparing technology of graphene high-frequency nanomechanical resonator |
| WO2015100333A1 (en) * | 2013-12-24 | 2015-07-02 | Polyera Corporation | Support structures for an attachable, two-dimensional flexible electronic device |
| CN105387927A (en) * | 2015-11-23 | 2016-03-09 | 南京邮电大学 | Novel flexible vibration sensor |
| CN105651375A (en) * | 2016-03-31 | 2016-06-08 | 德清县德意电脑有限公司 | Extremely low frequency micro-vibration signal sensor |
| WO2016197429A1 (en) * | 2015-06-09 | 2016-12-15 | 中国科学院深圳先进技术研究院 | Resistance strain gage and resistance strain sensor |
| US20170005203A1 (en) * | 2015-07-03 | 2017-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| CN106441645A (en) * | 2016-09-29 | 2017-02-22 | 中国科学院重庆绿色智能技术研究院 | Graphene pressure sensor array system and preparation method thereof |
| CN107024303A (en) * | 2016-02-02 | 2017-08-08 | 亚太优势微系统股份有限公司 | Miniature piezoresistive pressure sensor |
| CN108996463A (en) * | 2018-07-25 | 2018-12-14 | 清华大学深圳研究生院 | A kind of porous graphene heart sound detection sensor and preparation method thereof |
| CN110078976A (en) * | 2019-05-08 | 2019-08-02 | 齐鲁工业大学 | A kind of preparation method of piezoelectric sensing material and the material of preparation |
| CN110174197A (en) * | 2019-05-28 | 2019-08-27 | 北京旭碳新材料科技有限公司 | Graphene-based piezoresistive pressure sensor and preparation method thereof |
| CN111024213A (en) * | 2019-12-27 | 2020-04-17 | 安徽芯淮电子有限公司 | Flexible capacitive vibration sensor and manufacturing method thereof |
-
2020
- 2020-09-21 CN CN202010997543.0A patent/CN112161695B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296991A (en) * | 2013-04-28 | 2013-09-11 | 电子科技大学 | Graphene high-frequency nanomechanical resonator based on flexible substrate and preparing technology of graphene high-frequency nanomechanical resonator |
| WO2015100333A1 (en) * | 2013-12-24 | 2015-07-02 | Polyera Corporation | Support structures for an attachable, two-dimensional flexible electronic device |
| WO2016197429A1 (en) * | 2015-06-09 | 2016-12-15 | 中国科学院深圳先进技术研究院 | Resistance strain gage and resistance strain sensor |
| US20170005203A1 (en) * | 2015-07-03 | 2017-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| CN105387927A (en) * | 2015-11-23 | 2016-03-09 | 南京邮电大学 | Novel flexible vibration sensor |
| CN107024303A (en) * | 2016-02-02 | 2017-08-08 | 亚太优势微系统股份有限公司 | Miniature piezoresistive pressure sensor |
| CN105651375A (en) * | 2016-03-31 | 2016-06-08 | 德清县德意电脑有限公司 | Extremely low frequency micro-vibration signal sensor |
| CN106441645A (en) * | 2016-09-29 | 2017-02-22 | 中国科学院重庆绿色智能技术研究院 | Graphene pressure sensor array system and preparation method thereof |
| CN108996463A (en) * | 2018-07-25 | 2018-12-14 | 清华大学深圳研究生院 | A kind of porous graphene heart sound detection sensor and preparation method thereof |
| CN110078976A (en) * | 2019-05-08 | 2019-08-02 | 齐鲁工业大学 | A kind of preparation method of piezoelectric sensing material and the material of preparation |
| CN110174197A (en) * | 2019-05-28 | 2019-08-27 | 北京旭碳新材料科技有限公司 | Graphene-based piezoresistive pressure sensor and preparation method thereof |
| CN111024213A (en) * | 2019-12-27 | 2020-04-17 | 安徽芯淮电子有限公司 | Flexible capacitive vibration sensor and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| TAO HAN 等: "multifunctional flexible sensor based on laser-induced Graphene", 《SENSORS 2019》 * |
| 薛宁: "柔性可穿戴式压力传感设备及其医疗方向应用综述", 《海峡科技与产业》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115234697A (en) * | 2022-08-11 | 2022-10-25 | 苏州协昌环保科技股份有限公司 | Electromagnetic pulse valve |
| CN115234697B (en) * | 2022-08-11 | 2023-10-13 | 苏州协昌环保科技股份有限公司 | Electromagnetic pulse valve |
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