CN112160023A - 用于将籽晶旋转杆与坩埚旋转基座对中的方法及系统 - Google Patents
用于将籽晶旋转杆与坩埚旋转基座对中的方法及系统 Download PDFInfo
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- CN112160023A CN112160023A CN202011073670.8A CN202011073670A CN112160023A CN 112160023 A CN112160023 A CN 112160023A CN 202011073670 A CN202011073670 A CN 202011073670A CN 112160023 A CN112160023 A CN 112160023A
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- laser
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- light spot
- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011073670.8A CN112160023A (zh) | 2020-10-09 | 2020-10-09 | 用于将籽晶旋转杆与坩埚旋转基座对中的方法及系统 |
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CN202011073670.8A CN112160023A (zh) | 2020-10-09 | 2020-10-09 | 用于将籽晶旋转杆与坩埚旋转基座对中的方法及系统 |
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CN112160023A true CN112160023A (zh) | 2021-01-01 |
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CN202011073670.8A Pending CN112160023A (zh) | 2020-10-09 | 2020-10-09 | 用于将籽晶旋转杆与坩埚旋转基座对中的方法及系统 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113026090A (zh) * | 2021-02-08 | 2021-06-25 | 杭州富加镓业科技有限公司 | 一种籽晶杆抖动检测装置的检测方法及晶体生长方法 |
TWI758065B (zh) * | 2021-01-11 | 2022-03-11 | 環球晶圓股份有限公司 | 引晶位置的檢測方式 |
CN115323481A (zh) * | 2022-08-02 | 2022-11-11 | 山西潞安太阳能科技有限责任公司 | 一种偏心的直拉硅单晶炉及其拉晶工艺 |
CN115354389A (zh) * | 2022-08-29 | 2022-11-18 | 中能兴盛(香河)机电设备有限公司 | 晶体生长炉坩埚驱动轴预对中装置及其控制方法 |
CN116695235A (zh) * | 2023-08-08 | 2023-09-05 | 苏州晨晖智能设备有限公司 | 一种抑制晶体划弧的控制方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1441091A (zh) * | 2002-02-25 | 2003-09-10 | 中国科学院福建物质结构研究所 | 用顶部籽晶法生长晶体时籽晶的激光对中法 |
EP1591565A1 (en) * | 2004-03-24 | 2005-11-02 | Sumitomo Electric Industries, Ltd. | Diamond single crystal substrate |
CN109023512A (zh) * | 2018-08-29 | 2018-12-18 | 上海新昇半导体科技有限公司 | 长晶炉校验系统和长晶炉校验方法 |
CN111060015A (zh) * | 2019-12-10 | 2020-04-24 | 太原昂迈威电子科技有限公司 | 一种堆垛机运动垂直方向的小幅度位移检测装置 |
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2020
- 2020-10-09 CN CN202011073670.8A patent/CN112160023A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1441091A (zh) * | 2002-02-25 | 2003-09-10 | 中国科学院福建物质结构研究所 | 用顶部籽晶法生长晶体时籽晶的激光对中法 |
EP1591565A1 (en) * | 2004-03-24 | 2005-11-02 | Sumitomo Electric Industries, Ltd. | Diamond single crystal substrate |
CN109023512A (zh) * | 2018-08-29 | 2018-12-18 | 上海新昇半导体科技有限公司 | 长晶炉校验系统和长晶炉校验方法 |
CN111060015A (zh) * | 2019-12-10 | 2020-04-24 | 太原昂迈威电子科技有限公司 | 一种堆垛机运动垂直方向的小幅度位移检测装置 |
Non-Patent Citations (1)
Title |
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王祎雯等: "激光传感器光轴垂直度误差标定方法", 《中国激光》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI758065B (zh) * | 2021-01-11 | 2022-03-11 | 環球晶圓股份有限公司 | 引晶位置的檢測方式 |
CN113026090A (zh) * | 2021-02-08 | 2021-06-25 | 杭州富加镓业科技有限公司 | 一种籽晶杆抖动检测装置的检测方法及晶体生长方法 |
CN115323481A (zh) * | 2022-08-02 | 2022-11-11 | 山西潞安太阳能科技有限责任公司 | 一种偏心的直拉硅单晶炉及其拉晶工艺 |
CN115354389A (zh) * | 2022-08-29 | 2022-11-18 | 中能兴盛(香河)机电设备有限公司 | 晶体生长炉坩埚驱动轴预对中装置及其控制方法 |
CN116695235A (zh) * | 2023-08-08 | 2023-09-05 | 苏州晨晖智能设备有限公司 | 一种抑制晶体划弧的控制方法 |
CN116695235B (zh) * | 2023-08-08 | 2023-10-24 | 苏州晨晖智能设备有限公司 | 一种抑制晶体划弧的控制方法 |
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Effective date of registration: 20220801 Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |