CN112144038A - GaAs-based epitaxial doping source supply system for MOCVD equipment - Google Patents

GaAs-based epitaxial doping source supply system for MOCVD equipment Download PDF

Info

Publication number
CN112144038A
CN112144038A CN201910572208.3A CN201910572208A CN112144038A CN 112144038 A CN112144038 A CN 112144038A CN 201910572208 A CN201910572208 A CN 201910572208A CN 112144038 A CN112144038 A CN 112144038A
Authority
CN
China
Prior art keywords
data
doping source
gaas
carrier gas
index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910572208.3A
Other languages
Chinese (zh)
Other versions
CN112144038B (en
Inventor
吴作贵
朱忻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhangjiagang Enda Communication Technology Co ltd
Original Assignee
Zhangjiagang Enda Communication Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhangjiagang Enda Communication Technology Co ltd filed Critical Zhangjiagang Enda Communication Technology Co ltd
Priority to CN201910572208.3A priority Critical patent/CN112144038B/en
Publication of CN112144038A publication Critical patent/CN112144038A/en
Application granted granted Critical
Publication of CN112144038B publication Critical patent/CN112144038B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H01L21/2056—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2233—Diffusion into or out of AIIIBV compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to the technical field of metal organic chemical vapor deposition equipment, in particular to a GaAs-based epitaxial doping source supply system for MOCVD equipment, which aims to solve the problems that the quality of a produced product cannot be ensured and the production cost is increased due to the fact that a doping source is used or replaced when the doping source is not used up in the actual production process, and is technically characterized by comprising a flow pipeline, at least two MOCVD equipment and a control subsystem, wherein the flow pipeline is used for inputting a plurality of types of carrier gases and doping sources and outputting adjusted gases, the MOCVD equipment is connected with the flow pipeline, and the carrier gases and the doping sources are mixed and diluted to output the adjusted gases with index real-time data meeting index target data; the control subsystem includes a digital sensor; an executive component; and the control end is in communication connection with the digital sensor, compares the index real-time data detected by the digital sensor with the corresponding index target data, and controls the action of the executive component.

Description

GaAs-based epitaxial doping source supply system for MOCVD equipment
Technical Field
The invention relates to the technical field of metal organic chemical vapor deposition equipment, in particular to a GaAs-based epitaxial doping source supply system for metal organic chemical vapor deposition equipment, which is particularly suitable for an MOCVD (metal organic chemical vapor deposition) equipment system for growing GaAs-based related materials of an LED (light-emitting diode) and an LD (laser diode), and can be used in all semiconductor material growth equipment such as CVD (chemical vapor deposition), HVPE (high-voltage vapor deposition), MBE (molecular beam epitaxy) equipment using doping sources.
Background
Metal Organic Chemical Vapor Deposition (MOCVD) equipment is widely used in research, development, preparation and large-scale mass production of red and yellow light emitting diodes, laser diodes and single-junction or multi-junction solar cells. The MOCVD equipment generally adopts low pressure (10-200 mbar pressure) growth, and because the low pressure MOCVD is a non-equilibrium growth technology, the low pressure MOCVD relies on the pumping force of a vacuum pump, hydrogen or nitrogen is used as a carrier gas, and vapor phase epitaxy growth is carried out on a substrate in a thermal decomposition reaction mode, so that thin layer single crystal materials of various III-V compound semiconductors and multi-element solid solutions thereof are prepared.
The doping source, also called as a group III metal organic source, is one of the important raw materials for MOCVD growth and mainly comprises TMGa, TMAl, TMIn, Cp2Mg and DEZn, etc., which are generally characterized by high purity (6N), flammability, explosiveness, and high toxicity, so the doping source has high requirements for preparation, filling, sealing, transportation, and use, and is very expensive. TMGa, TMAl and TMIn are epitaxial sources, and the growth rate of the epitaxial layer film is directly influenced by the molar flow rate of the injection reaction chamber in the growth process; cp2Mg and DEZn are doping sources, the doping concentration of the epitaxial layer film growth is directly influenced by the molar flow rate of the injection reaction chamber in the growth process, and the Mg and the DEZn are a very key ring in the parameter control of the epitaxial growth material.
There are very special run/vent switching loop designs in MOCVD systems because the saturation vapor pressure or molar flow of each dopant source needs a certain time to stabilize, while the reacting dopant source must be able to switch between the two lines quickly and smoothly during film growth in order to meet the requirements of steep heterostructure or abrupt doping. When the device works, the doping source which firstly participates in the reaction is conveyed to the position of the change-over switch by the carrier gas to be in a preparation state, is firstly emptied through the vent pipeline, and is quickly switched into the run pipeline as required to enter the reaction cavity after the molar flow of the doping source is stable, so that the molar flow of the doping source can be accurately controlled, and the quality of a grown film is effectively improved.
Taking Aixtron2600G3 as an example for growing GaAs-based LED materials, the doping source is typically used at 0.003G to 0.005G per run, depending on the performance requirements of the target product. The minimum packaging amount of a single bottle of doping source is 50g, 6run are grown per day according to a single MOCVD device, 25 days are grown per month, 9g can be used for full production in the whole year (0.005g/run 6 run/day 25 day/month 12 month/year is 9 g/year), namely, one bottle of doping source can be used up for at least five years. However, the quality guarantee period of the doping source is usually two years, so that the doping source is used or not used and needs to be replaced in the actual production process, thereby causing the phenomena that the quality of the produced product cannot be guaranteed and the production cost is increased.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects that the doping source is used or not used up and needs to be replaced in the actual production process, so that the quality of the produced product cannot be ensured, and the production cost is increased, thereby providing a GaAs-based epitaxial doping source supply system for MOCVD equipment.
The technical purpose of the invention is realized by the following technical scheme:
a GaAs-based epitaxial dopant source supply system for an MOCVD apparatus, comprising:
the system comprises a flow pipeline for inputting and outputting adjusted gas by a carrier gas and a doping source, at least two MOCVD (metal organic chemical vapor deposition) devices connected with the flow pipeline, and a control subsystem, wherein the carrier gas and the doping source are mixed and diluted to output the adjusted gas with index real-time data meeting index target data;
the index real-time data comprises gas flow data of carrier gas of a doping source, saturation vapor pressure data of the doping source at a set temperature and pressure data in a doping source container, and the index target data comprises target parameter data corresponding to each index real-time data;
the control subsystem includes:
at least one group of digital sensors which are arranged on the circulation pipeline and detect the index real-time data of the gas obtained by the adjustment;
an actuator provided on the circulation line and controlling a circulation state of the circulation line;
and the control end is in communication connection with the digital sensor, compares the index real-time data detected by the digital sensor with the corresponding index target data, controls the action of the executing piece, and outputs the gas obtained by adjusting the index real-time data to meet the index target data.
Optionally, the flow line comprises:
a doping source;
a first carrier gas inlet pipe and a second carrier gas inlet pipe which are connected with the doping source;
and the output pipeline comprises a circulating output pipe which is communicated with the first carrier gas inlet pipe and the second carrier gas inlet pipe to output the gas obtained by adjusting the index real-time data which does not accord with the index target data, and a qualified output pipe which is communicated with the second carrier gas inlet pipe and the MOCVD equipment to output the gas obtained by adjusting the index real-time data which accords with the index target data.
Optionally, the actuator comprises:
the pressure controller is arranged on the doping source;
the gas inlet valve and the source mass flow controller are arranged on the first carrier gas inlet pipe;
the gas outlet valve and the dilute mass flow controller are arranged on the second carrier gas inlet pipe;
and the bypass valve is arranged on the circulating output pipe.
Optionally, the control end includes at least one personal computer and at least one programmable logic controller that stores data by using a stack algorithm;
the programmable logic controller is used for storing the index target data, and simultaneously controls the action of the executive component;
and the personal computer is in communication connection with the programmable logic controller and is used for realizing data synchronization.
Optionally, the control terminal and the digital sensor perform mutual check of working states through interaction of handshake signals.
Optionally, the personal computer and the programmable logic controller perform mutual checking of the working state through interaction of heartbeat signals.
Optionally, the programmable logic controller further stores normal operating parameters and/or operating life information of each component in the GaAs-based epitaxial doping source supply system for the MOCVD equipment, and determines whether the component needs to be replaced or maintained according to the normal operating parameters and/or the operating life information of each component, and if so, performs local and/or remote warning.
Optionally, the programmable logic controller stores ID information and calibration data of the digital sensor, and performs identification on the digital sensor based on the ID information of the digital sensor, and performs parameter adjustment on the digital sensor according to the calibration data of the digital sensor.
The technical scheme of the invention has the following advantages:
1. the GaAs-based epitaxial doping source supply system for the MOCVD equipment has the advantages that the doping type and the carrier concentration of an epitaxial layer film are directly influenced by the control of the injection molar flow of the MOCVD equipment doping source, therefore, the invention is a very key ring in the MOCVD gas circuit control system, the doping source of the invention adopts double dilution pipelines for supply due to small dosage, the control of the injection molar flow of the doping source is realized by controlling the flow of the carrier gas, the external temperature and the outlet pressure of the circulation pipeline, meanwhile, a single bottle of doping source is pertinently adopted to be connected with a plurality of MOCVD devices, thereby thoroughly solving the problem that the doping source needs to be replaced after being used for the past term or not used, the method is particularly suitable for MOCVD equipment systems for growing GaAs-based related materials of LEDs and LDs, can be used in all semiconductor material growth equipment such as CVD, HVPE and MBE, etc. using doping sources.
2. The GaAs-based epitaxial doping source supply system for the MOCVD equipment has the advantages that an air inlet valve and an air outlet valve are in a normally open state through a control end, a bypass valve is in a closed state, carrier gas flowing through a first carrier gas inlet pipe enters a doping source through the air inlet valve, the doping source is carried out and is mixed and diluted after being converged with carrier gas flowing through a second carrier gas inlet pipe, in the process, a digital sensor monitors gas flow data of the carrier gas of the doping source, saturated vapor pressure data of the doping source at a set temperature and pressure data in a doping source container in real time, so that a source mass flow controller and a dilute mass flow controller are accurately regulated and controlled, if the regulated gas is unqualified, the bypass valve is opened to flow into a circulating output pipe to be mixed again, and accurate control of injection molar flow of the doping source is realized; and if the gas obtained by adjustment is qualified, the gas is guided into the MOCVD equipment through a qualified output pipe to realize supply.
3. The GaAs-based epitaxial doping source supply system for the MOCVD equipment disclosed by the invention has the advantages that the mutual check of the working states is carried out between the control end and the digital sensor through the interaction of handshake signals, and the stability of the system is improved.
4. The GaAs-based epitaxial doping source supply system for the MOCVD equipment can be used for carrying out mutual check on the working state of the personal computer and the programmable logic controller through the interaction of heartbeat signals, so that the information loss is effectively prevented.
5. The GaAs-based epitaxial doping source supply system for the MOCVD equipment stores the normal working parameters and/or the working life information of each part in the programmable logic controller, and realizes the prejudgment of the system.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a GaAs-based epitaxial dopant source supply system for an MOCVD tool according to an embodiment of the present invention;
fig. 2 is a block diagram of a GaAs-based epitaxial dopant source supply system for an MOCVD tool according to an embodiment of the present invention.
Description of reference numerals:
11. a doping source; 12. a first carrier gas inlet pipe; 13. a second carrier gas inlet pipe; 14. circulating an output pipe; 15. qualified output pipes; 21. a digital sensor; 22. an executive component; 221. a pressure controller; 222. an intake valve; 223. a source mass flow controller; 224. an air outlet valve; 225. a dilute mass flow controller; 226. a bypass valve; 23. a control end; 231. a personal computer; 232. a programmable logic controller; 233. a logic control unit; 234. a database; 235. an alarm unit.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
A GaAs-based epitaxial dopant source supply system for MOCVD equipment, as shown in fig. 1 and 2, includes a flow line through which a carrier gas and a dopant source are input and output an adjusted gas, at least two MOCVD equipment connected to the flow line, and a control subsystem, wherein the carrier gas and the dopant source are mixed and diluted to output the adjusted gas whose index real-time data meets index target data; the index real-time data comprises gas flow data of carrier gas of a doping source, saturation vapor pressure data of the doping source at a set temperature and pressure data in a doping source container, and the index target data comprises target parameter data corresponding to each index real-time data. Because the control of the injection molar flow of the doping source of the MOCVD equipment directly influences the doping type and the carrier concentration of the epitaxial layer film, the control system is a very critical ring in an MOCVD gas circuit control system. The doping source is supplied by adopting double dilution pipelines because the dosage is less, and the injection molar flow of the doping source is controlled by controlling the carrier gas flow, the external temperature and the outlet pressure of the circulation pipeline. The method is particularly suitable for MOCVD equipment systems for growing GaAs-based related materials of LEDs and LDs, and can be used in all semiconductor material growth equipment such as CVD, HVPE and MBE using doping sources.
The injection amount of the doping source from the flow pipeline to the MOCVD equipment is determined by the following conditions: 1. the gas flow rate of the dopant source carrier gas; 2. the saturated vapor pressure of the doping source at a set temperature; 3. absolute pressure within the dopant source vessel. The dual dilution line feed expression is as follows:
NMO＝[(Fsource*Finject/(Fsource+Fdilute)]*[PMO/(Pbub–PMO)]/Vm
wherein N isMOIs the doping source molar flow (mol/min); pMOIs the saturation vapor pressure of the doping source; pbubIs the absolute pressure in the stainless steel cylinder of the doping source; fsource is the flow rate (sccm) of carrier gas introduced into the doping source stainless steel cylinder and is controlled by an MFC at the doping source inlet; fdilute is the carrier gas flow diluted at the outlet of the doping source stainless steel cylinder and is controlled by an MFC at the outlet of the doping source; finject is the doping source flow (sccm) entering the MOCVD equipment and is controlled by an MFC at the doping source outlet and at the MOCVD equipment; vm is the molar gas constant equal to 22414 (cm)3/mol)。
Specifically, as shown in fig. 1 and 2, the control subsystem includes at least one set of digital sensors 21 disposed on the flow pipe for detecting real-time index data of the gas obtained by adjustment; an actuator 22 provided in the flow path and controlling the flow state of the flow path; and the control end 23 is in communication connection with the digital sensor 21, compares the index real-time data detected by the digital sensor 21 with the corresponding index target data, and controls the actuating part 22 to act so as to output the gas obtained by adjusting the index real-time data to meet the index target data.
As shown in fig. 1, the flow line includes a doping source 11; a first carrier gas inlet pipe 12 and a second carrier gas inlet pipe 13 which are connected with the doping source 11; and the output pipeline comprises a circulating output pipe 14 which is communicated with the first carrier gas inlet pipe 12 and the second carrier gas inlet pipe 13 to output the gas obtained by adjusting the index real-time data which does not accord with the index target data, and a qualified output pipe 15 which is communicated with the second carrier gas inlet pipe 13 and the MOCVD equipment to output the gas obtained by adjusting the index real-time data which accords with the index target data. The actuator 22 includes a pressure controller 221 disposed on the doping source 11; an intake valve 222 and a source mass flow controller 223 provided on the first carrier gas intake pipe 12; an outlet valve 224 and a dilute mass flow controller 225 provided on the second carrier gas inlet pipe 13; a bypass valve 226 is disposed on the recycled outlet pipe 14. In this embodiment of the present invention, the dopant source 11 is one of Cp2Mg or DEZn, the dopant source 11 is stored in a steel cylinder and placed in a constant temperature water bath, when in a process growth mode, the control terminal 23 makes the inlet valve 222 and the outlet valve 224 in a normally open state, the bypass valve 226 is in a closed state, the carrier gas flowing through the first carrier gas inlet pipe 12 enters the dopant source 11 through the inlet valve 222, carries the dopant source out, and mixes and dilutes the carrier gas flowing through the second carrier gas inlet pipe 13 after merging with the carrier gas, in this process, the digital sensor 21 monitors the gas flow data of the carrier gas of the dopant source, the saturated vapor pressure data of the dopant source at a set temperature, and the pressure data in the dopant source container in real time, so as to accurately regulate and control the pressure controller 221, the source mass flow controller 223, the dilute mass flow controller 225, and if the regulated gas is not qualified, then the bypass valve 226 is opened to make it flow into the circulation output pipe 14 for re-mixing, so as to achieve the precise control of the injection molar flow of the doping source; if the gas obtained by the adjustment is acceptable, the gas is introduced into the MOCVD equipment through an acceptable gas outlet pipe 15 to supply the gas.
As shown in fig. 2, the control end 23 is connected to the digital sensor 21 and the actuator 22, and the control end 23 includes: at least one personal computer 231 and at least one programmable logic controller 232 corresponding to the personal computer 231, wherein each digital sensor 21 is connected with the personal computer 231 and the programmable logic controller 232, and each executive component 22 is connected with the programmable logic controller 232. The programmable logic controller 232 is provided with a database 234, the personal computer 231 is provided with a visual operation interface, and the personal computer 231 is in communication connection with the programmable logic controller 232, so that an operator can control the programmable logic controller 232 through the personal computer 231, and simultaneously, data synchronization between the personal computer 231 and the programmable logic controller 232 is realized, however, in the embodiment, the database 234 of the programmable logic controller 232 has a small data storage amount, so that a stack algorithm is adopted to temporarily store data, the personal computer 231 adopts a hard disk for storage, the data storage amount is large, the programmable logic controller 232 receives new preset information and then synchronizes to the personal computer 231 for storage, so as to prevent data loss, and simultaneously, the data is repeatedly covered by itself, namely, if new data comes, the recent data is covered and replaced by old data, to achieve an iteration of the data.
As shown in fig. 2, the plc 232 further includes a logic control unit 233 and an alarm unit 235, and the database 234 and the alarm unit 235 are connected to the logic control unit 233. Meanwhile, each digital sensor 21 feeds back the detected real-time index data to the programmable logic controller 232, and the logic control unit 233 selects corresponding index target data from the corresponding index target data in the database 234 according to the feedback information of each digital sensor 21 and sends the index target data to the logic control unit 233 for comparison and judgment, and controls the action of each executive component 22 according to the judgment result. The database 234 of the programmable logic controller 232 stores normal working parameters and/or working life information of each component in the GaAs-based epitaxial doping source supply system of the MOCVD equipment, and can determine whether the component needs to be replaced or maintained according to the normal working parameters and/or the working life information of each component, if so, the alarm unit 235 is controlled to give a local warning, so that the function of prejudging the working state of each component is realized, a worker is reminded of replacing or maintaining in advance, the occurrence of a fault is prevented, and the working efficiency is improved.
As shown in fig. 2, in order to improve the stability of the system, in this embodiment of the present invention, the control end 23 and the digital sensor 21 perform mutual check of the working states through the interaction of handshake signals, a signal is provided to the digital sensor 21 every time the control end 23 is started, the digital sensor 21 feeds back a signal to the control end 23, the feedback signal includes ID information of each digital sensor 21, the control end 23 compares and determines the fed back signal with corresponding ID information in the database 234, and when there is a problem in the digital sensor 21, or when a certain symptom needs to be processed but does not temporarily affect the normal operation, and the change of the sensor is within an error range, indication information of rejection, warning, or normal activation is made.
As shown in fig. 2, in order to prevent information loss, in this embodiment of the present invention, the personal computer 231 and the programmable logic controller 232 perform mutual checking of the operation states through the interaction of heartbeat signals. That is, when it is set that the plc 232 and the pc 231 do not receive the signals from each other within the preset time, it is determined that the pc 231 or the plc 232 is down, and when one of the pc 231 or the plc 232 is down, the system stops operating, and waits for the pc 231 or the plc 232 in the down state to restart or continue operating, but the data is directly stored in the pc 231 or the plc 232 that normally operates, and after the down side restarts, the data is transmitted to the down side. Wherein, the preset time for judging whether the personal computer 231 or the programmable logic controller 232 is normal is not more than 1 minute.
As shown in fig. 2, each digital sensor 21 has ID information of a fixed model, a rated load, a permitted load, a limit load, sensitivity, etc., the programmable logic controller 232 stores the ID information of each digital sensor 21 in the database 234, when the digital sensor 21 is replaced or the system is restarted, the digital sensor 21 sends the ID information to the programmable logic controller 232, the logic control unit 233 compares the ID information of each digital sensor 21 in the system with the reference ID information stored in the database 234 to detect whether the digital sensor 21 is legal or valid, and if the ID information of the digital sensor 21 in the system is detected to be inconsistent with the reference ID information stored in the database 234, the alarm unit 235 is controlled to perform local warning to identify the digital sensor 21.
The working principle of the GaAs-based epitaxial doping source supply system for the MOCVD equipment is as follows: the control end 23 enables the air inlet valve 222 and the air outlet valve 224 to be in a normally open state, the bypass valve 226 is in a closed state, the carrier gas flowing through the first carrier gas inlet pipe 12 enters the doping source 11 through the air inlet valve 222, carries out the doping source, and is mixed and diluted with the carrier gas flowing through the second carrier gas inlet pipe 13, in the process, the digital sensor 21 monitors gas flow data of the carrier gas of the doping source, saturated vapor pressure data of the doping source at a set temperature and pressure data in a doping source container in real time, so that the pressure controller 221, the source mass flow controller 223 and the dilute mass flow controller 225 are accurately regulated and controlled, and if the regulated gas is unqualified, the bypass valve 226 is opened to flow into the circulation output pipe 14 to be mixed again, so that the accurate control of injection molar flow of the doping source is realized; if the gas obtained by the adjustment is acceptable, the gas is introduced into the MOCVD equipment through an acceptable gas outlet pipe 15 to supply the gas.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (8)

1. A GaAs-based epitaxial dopant source supply system for an MOCVD apparatus, comprising:
the system comprises a flow pipeline, MOCVD equipment and a control subsystem, wherein the flow pipeline is used for inputting carrier gas and a doping source and outputting gas obtained by adjustment, the MOCVD equipment is connected with the flow pipeline, and the carrier gas and the doping source are mixed and diluted to output the gas obtained by adjustment, wherein index real-time data of the gas meets index target data;
the index real-time data comprises gas flow data of carrier gas of a doping source, saturation vapor pressure data of the doping source at a set temperature and pressure data in a doping source container, and the index target data comprises target parameter data corresponding to each index real-time data;
the control subsystem includes:
at least one set of digital sensors (21) arranged on the circulation pipeline and used for detecting the index real-time data of the gas obtained by the adjustment;
an actuator (22) that is provided in the flow path and controls the flow state of the flow path;
and the control end (23) is in communication connection with the digital sensor (21), compares the index real-time data detected by the digital sensor (21) with the corresponding index target data, controls the execution piece (22) to act, and outputs the gas obtained by adjusting the index real-time data to meet the index target data.
2. The GaAs-based epitaxial dopant source supply system for an MOCVD tool of claim 1, wherein the flow line comprises:
a doping source (11);
a first carrier gas inlet pipe (12) and a second carrier gas inlet pipe (13) which are connected with the doping source (11);
and the output pipeline comprises a circulating output pipe (14) which is communicated with the first carrier gas inlet pipe (12) and the second carrier gas inlet pipe (13) to output the gas obtained by adjusting the index real-time data which does not accord with the index target data, and a qualified output pipe (15) which is communicated with the second carrier gas inlet pipe (13) and the MOCVD equipment to output the gas obtained by adjusting the index real-time data which accords with the index target data.
3. GaAs-based epitaxial dopant source supply system for MOCVD tools according to claim 2, characterized in that said actuator (22) comprises:
a pressure controller (221) disposed on the doping source (11);
an inlet valve (222) and a source mass flow controller (223) disposed on the first carrier gas inlet conduit (12);
an air outlet valve (224) and a dilute mass flow controller (225) which are arranged on the second carrier gas inlet pipe (13);
a bypass valve (226) disposed on the circulating outlet pipe (14).
4. The GaAs-based epitaxial dopant source supply system for MOCVD equipment according to claim 1, wherein said control terminal (23) comprises at least one personal computer (231) and at least one programmable logic controller (232) for data storage using a stack algorithm;
the programmable logic controller (232) is used for storing the index target data, and meanwhile, the programmable logic controller (232) controls the action of the executive component (22);
the personal computer (231) is in communication connection with the programmable logic controller (232) for data synchronization.
5. GaAs-based epitaxial dopant source supply system for MOCVD equipment, according to claim 4, characterized in that said control terminal (23) and said digitizing sensor (21) perform mutual checking of the working status by means of the interaction of handshake signals.
6. The GaAs-based epitaxial dopant source supply system for MOCVD equipment of claim 4, wherein said personal computer (231) and said programmable logic controller (232) perform mutual check of working status through interaction of heartbeat signals.
7. The GaAs-based epitaxial dopant source supply system for the MOCVD equipment of claim 4, wherein the programmable logic controller (232) further stores normal operating parameters and/or service life information of each component in the GaAs-based epitaxial dopant source supply system for the MOCVD equipment, and judges whether the component needs to be replaced or maintained according to the normal operating parameters and/or service life information of each component, and if so, the system carries out local and/or remote warning.
8. The GaAs-based epitaxial dopant source supply system for the MOCVD equipment of claim 4, wherein the programmable logic controller (232) stores ID information and calibration data of the digitizer sensor (21), and the programmable logic controller (232) identifies the digitizer sensor (21) based on the ID information of the digitizer sensor (21) and adjusts parameters of the digitizer sensor (21) according to the calibration data of the digitizer sensor (21).
CN201910572208.3A 2019-06-27 2019-06-27 GaAs-based epitaxial doping source supply system for MOCVD equipment Active CN112144038B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910572208.3A CN112144038B (en) 2019-06-27 2019-06-27 GaAs-based epitaxial doping source supply system for MOCVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910572208.3A CN112144038B (en) 2019-06-27 2019-06-27 GaAs-based epitaxial doping source supply system for MOCVD equipment

Publications (2)

Publication Number Publication Date
CN112144038A true CN112144038A (en) 2020-12-29
CN112144038B CN112144038B (en) 2023-06-27

Family

ID=73869069

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910572208.3A Active CN112144038B (en) 2019-06-27 2019-06-27 GaAs-based epitaxial doping source supply system for MOCVD equipment

Country Status (1)

Country Link
CN (1) CN112144038B (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
CN101479402A (en) * 2006-06-27 2009-07-08 株式会社富士金 Vaporizer/supplier of material and automatic pressure regulator for use therein
CN102661166A (en) * 2012-05-03 2012-09-12 河南理工大学 Method for purifying gas extracted by mine by using ionic liquid
CN103797563A (en) * 2011-09-06 2014-05-14 株式会社富士金 Material vaporization supply device equipped with material concentration detection mechanism
US20170159175A1 (en) * 2015-12-02 2017-06-08 Tokyo Electron Limited Raw material gas supply apparatus, raw material gas supply method and storage medium
CN106996513A (en) * 2015-10-13 2017-08-01 株式会社堀场Stec Gas control system and the control method for gas control system
CN108052134A (en) * 2017-12-30 2018-05-18 利穗科技(苏州)有限公司 Digitize buffer solution liquid mixing system and method
CN108246104A (en) * 2017-12-30 2018-07-06 利穗科技(苏州)有限公司 Digitize ultrafiltration system and method
CN108279625A (en) * 2017-12-30 2018-07-13 利穗科技(苏州)有限公司 Digitize tomographic system and method
CN108570659A (en) * 2017-03-10 2018-09-25 株式会社堀场Stec Gas control system, film formation device, storage medium and gas control method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
CN101479402A (en) * 2006-06-27 2009-07-08 株式会社富士金 Vaporizer/supplier of material and automatic pressure regulator for use therein
CN103797563A (en) * 2011-09-06 2014-05-14 株式会社富士金 Material vaporization supply device equipped with material concentration detection mechanism
CN102661166A (en) * 2012-05-03 2012-09-12 河南理工大学 Method for purifying gas extracted by mine by using ionic liquid
CN106996513A (en) * 2015-10-13 2017-08-01 株式会社堀场Stec Gas control system and the control method for gas control system
US20170159175A1 (en) * 2015-12-02 2017-06-08 Tokyo Electron Limited Raw material gas supply apparatus, raw material gas supply method and storage medium
CN108570659A (en) * 2017-03-10 2018-09-25 株式会社堀场Stec Gas control system, film formation device, storage medium and gas control method
CN108052134A (en) * 2017-12-30 2018-05-18 利穗科技(苏州)有限公司 Digitize buffer solution liquid mixing system and method
CN108246104A (en) * 2017-12-30 2018-07-06 利穗科技(苏州)有限公司 Digitize ultrafiltration system and method
CN108279625A (en) * 2017-12-30 2018-07-13 利穗科技(苏州)有限公司 Digitize tomographic system and method

Also Published As

Publication number Publication date
CN112144038B (en) 2023-06-27

Similar Documents

Publication Publication Date Title
US6066204A (en) High pressure MOCVD reactor system
US10132001B2 (en) Vapor phase growth apparatus and vapor phase growth method
US11124894B2 (en) Vapor phase growth apparatus and vapor phase growth method
CN102732956A (en) MO source supply system for GaN epitaxy of MOCVD equipment
Miller et al. Metalorganic chemical vapor deposition
US20110263098A1 (en) Hybrid deposition chamber for in-situ formation of group iv semiconductors & compounds with group iii-nitrides
CN112144038B (en) GaAs-based epitaxial doping source supply system for MOCVD equipment
US9404182B2 (en) Multi-wafer reactor
JP2008218760A (en) Manufacturing method for semiconductor device, and manufacturing apparatus for semiconductor device
TWI545226B (en) Liquid metal organic compound supply system
CN112144041B (en) Gas source supply system for multiple MOCVD equipment simultaneously
US9087695B2 (en) Multi-wafer reactor
US20170233867A1 (en) Vapor phase growth apparatus and vapor phase growth method
US11149358B2 (en) Vapor phase growth apparatus comprising n reactors, a primary gas supply path, a main secondary gas supply path, (n−1) auxiliary secondary gas supply paths, a first control circuit, and a second control circuit
CN213327928U (en) HVPE sealed automatic gallium source injection system
CN216864318U (en) MOCVD system
CN114150294A (en) Centralized supply system of solid metal organic source
US20130295283A1 (en) Chemical vapor deposition apparatus with multiple inlets for controlling film thickness and uniformity
US20130213299A1 (en) Liquid tank and thin film deposition apparatus using the same
KR20140009638A (en) Reaction metal supply units of vertical hydride vapor phase epitaxy reactor
Ryou et al. CVD of III-V compound semiconductors
Tokunaga et al. Multiwafer atmospheric‐pressure MOVPE reactor for nitride semiconductors and ex‐situ dry cleaning of reactor components using chlorine gas for stable operation
CN101819925B (en) Chemical vapor deposition device
Deschler et al. Halogen VPE of AlGaAs for optoelectronic device applications
JPH10147871A (en) Vaporizer for vapor-phase epitaxial growth system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant