CN112133669B - Semiconductor chamber and semiconductor device - Google Patents
Semiconductor chamber and semiconductor device Download PDFInfo
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- CN112133669B CN112133669B CN202010906130.7A CN202010906130A CN112133669B CN 112133669 B CN112133669 B CN 112133669B CN 202010906130 A CN202010906130 A CN 202010906130A CN 112133669 B CN112133669 B CN 112133669B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000005530 etching Methods 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 15
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 52
- 230000000694 effects Effects 0.000 description 10
- 238000009423 ventilation Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 5
- 230000008093 supporting effect Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention discloses a semiconductor chamber and semiconductor equipment, wherein the semiconductor chamber comprises a shell (100), a preheating component (200) and a base (300), wherein the preheating component (200) and the base (300) are arranged in the shell (100), the base (300) is used for bearing a workpiece (700) to be processed and can be lifted, and the preheating component (200) is arranged around the base (300) and is used for preheating the semiconductor chamber; when the base (300) is at a process position, the vent hole (212) is lower than the bearing surface of the base (300) towards the opening of the base (300), and the vent hole (212) is used for enabling etching gas to be input below the bearing surface and input above the bearing surface along a gap between the preheating assembly (200) and the base (300). The above embodiment can solve the problem that the central area of the bearing surface of the base is excessively etched.
Description
Technical Field
The present invention relates to the field of epitaxial wafer manufacturing technology, and in particular, to a semiconductor chamber and a semiconductor device.
Background
An epitaxial wafer is a wafer obtained by vapor-phase growth of an epitaxial layer on the surface of a semiconductor wafer. In the related art, a silicon layer is produced by reducing a wafer with hydrogen gas by introducing trichlorosilane into a semiconductor chamber of a semiconductor device.
However, during the production of epitaxial wafers, other components within the semiconductor chamber may also be deposited with a silicon layer, and thus etching of that portion of the silicon layer is required. The central area of the bearing surface of the pedestal is provided with a wafer to be processed, so that the deposited silicon layer in the central area of the pedestal is thinner, the edge of the pedestal is exposed, and the deposited silicon layer is thicker.
Disclosure of Invention
The invention discloses a semiconductor chamber and semiconductor equipment, which are used for solving the problem that the central area of a bearing surface of a base is excessively etched.
In order to solve the problems, the invention adopts the following technical scheme:
the semiconductor chamber comprises a shell, a preheating component and a base, wherein the preheating component is arranged in the shell, the base is used for bearing a workpiece to be processed and can be lifted, and the preheating component is arranged around the base and is used for preheating the semiconductor chamber;
when the base is in a process position, the vent hole is lower than the bearing surface of the base towards the opening of the base, and the vent hole is used for enabling etching gas to be input below the bearing surface and input above the bearing surface along a gap between the preheating component and the base.
A semiconductor device includes the reaction chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the semiconductor cavity disclosed by the invention, the base is used for bearing a workpiece to be processed, the base can be lifted in the shell, the preheating component is arranged around the base, and the preheating component is used for preheating the semiconductor cavity. The preheating component is provided with a vent hole, when the base is positioned at the process position, the vent hole faces the opening of the base and is lower than the bearing surface of the base, so that etching gas entering the preheating component through the vent hole flows along the lower part of the bearing surface of the base, and the etching gas can strengthen the etching action on the lower part of the bearing surface; the other part inputs the top of loading surface along the clearance between preheating component and the base, and this part etches the gas and can strengthen the etching action to the edge of loading surface to reduce the flow of the etching gas of the central zone of loading surface of input to the base, make the central zone of loading surface be difficult to by excessive etching, be difficult to make the base release impurity, thereby can improve the cleanliness factor of semiconductor, consequently when waiting the work piece epitaxial growth, can improve the production quality of the epitaxial layer of waiting the work piece.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a cross-sectional view of a semiconductor chamber according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a preheating assembly in a semiconductor chamber according to an embodiment of the present invention;
FIG. 3 is a side view of a preheating assembly in a semiconductor chamber according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a preheating assembly in a semiconductor chamber according to an embodiment of the present invention;
fig. 5 is a schematic structural view of a susceptor in a semiconductor chamber according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another semiconductor chamber according to an embodiment of the present invention.
Reference numerals illustrate:
100-shell, 110-upper arch part, 120-lower arch part, 130-metal shell part, 131-air inlet block;
200-preheating components, 210-lower annular parts, 212-vent holes, 213-positioning grooves, 214-diversion parts and 220-upper annular parts;
300-base, 310-containing groove, 311-exhaust hole, 312-top pinhole;
400-supporting part, 410-positioning protrusion;
510-growth gas channel, 511-first sub-channel, 512-second sub-channel, 520-etching gas channel, 521-third sub-channel, 522-fourth sub-channel;
600-driving shaft;
700-to-be-machined piece.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 6, an embodiment of the present invention discloses a semiconductor chamber, which includes a housing 100, a preheating assembly 200 disposed in the housing 100, and a susceptor 300, the preheating assembly 200 being disposed around the susceptor 300.
The housing 100 is the main body component of the semiconductor chamber, and the housing 100 provides a mounting basis for other assembly components of the semiconductor chamber. The work to be processed 700 such as a wafer is processed in the housing 100. Specifically, the housing 100 may include an upper arch portion (upper dome portion) 110, a lower arch portion (lower dome portion) 120, and a metal housing portion 130, and the upper arch portion 110 and the lower arch portion 120 are connected to the metal housing portion 130 through connection flanges, respectively.
The preheating assembly 200 can perform a preheating process on the semiconductor chamber, so that the workpiece to be processed has better thermal uniformity, and the uniformity of the epitaxial layer of the workpiece to be processed 700 is improved. Preheating the semiconductor chamber above includes preheating the susceptor 300, the work piece 700, and the reaction gas introduced into the semiconductor chamber. The reaction gas comprises a growth gas and an etching gas, wherein the growth gas mainly comprises hydrogen, a silicon source gas and a doping gas source. The etching gas is mainly hydrogen chloride gas. A growth gas may be introduced during the epitaxial layer growth stage, so that an epitaxial layer may be formed on the work piece 700. While the epitaxial layer is being grown, other components in the semiconductor chamber are also deposited with a silicon layer, and thus require the introduction of an etching gas for etching.
The base 300 is used for carrying a workpiece 700 to be processed, and the base 300 can be lifted. Specifically, the base 300 is connected to the driving shaft 600, and the driving shaft 600 drives the base 300 to move along the axial direction of the driving shaft 600, thereby realizing the lifting of the base 300 in the housing 100. The susceptor 300 is disposed coaxially with the preheating assembly 200, that is, the central axis of the preheating assembly 200 coincides with the central axis of the susceptor 300. Alternatively, the semiconductor chamber may further include a driving source, which may be disposed outside the housing 100, and which is connected to the driving shaft 600, and which drives the susceptor 300 to be lifted up and down by the driving shaft 600. The driving source may be a power structure such as a hydraulic cylinder and a driving motor, and of course, may be other power structures, which are not limited herein. Since the drive shaft 600 is partially located within the housing 100, a silicon layer is also deposited on the drive shaft 600.
As shown in fig. 1, the support 400 is located in the housing 100, and the support 400 is used for carrying the preheating assembly 200. The preheating assembly 200 is provided with a vent hole 212, when the susceptor 300 is at the process position, the vent hole 212 is opened toward the susceptor 300 to be lower than the carrying surface of the susceptor 300, and the vent hole 212 is used for enabling etching gas to be input below the carrying surface and to be input above the carrying surface along a gap between the preheating assembly 200 and the susceptor 300. Alternatively, the number of the ventilation holes 212 may be 8, the diameter of the ventilation holes 212 may be between 4mm and 6mm, and the opening of the ventilation holes 212 toward the base 300 may be between 1mm and 2mm below the bearing surface of the base 300. Both the preheating assembly 200 and the base 300 may be made of graphite materials, and the number of the ventilation holes 212 may be selected according to the actual working conditions, which is not limited herein.
Optionally, the axis of the vent 212 is at an angle equal to 90 ° to the axis of the preheating assembly 200, that is, the vent 212 opens horizontally. Alternatively, the axis of the vent 212 may be angled less than 90 ° or greater than 90 ° from the axis of the preheating assembly 200, that is, the vent 212 is angled.
In a specific operation, when the work piece 700 to be processed is required, the driving shaft 600 drives the base 300 to be lifted and lowered, thereby driving the base 300 to the process position. The process location may be subjected to a growth process and an etching process of the work piece 700.
In the embodiment of the present invention, the preheating component 200 is disposed around the susceptor 300, and the preheating component 200 can split the etching gas introduced into the semiconductor chamber, wherein a part of the etching gas enters the preheating component 200 through the vent holes 212, and another part of the etching gas enters the preheating component 200 through the top end of the preheating component 200. When the susceptor 300 is at the process position, since the opening of the vent hole 212 toward the susceptor 300 is lower than the carrying surface of the susceptor 300, a portion of the etching gas entering the preheating assembly 200 through the vent hole 212 flows along the lower side of the carrying surface of the susceptor 300, and the etching gas can enhance the etching action on the lower side of the carrying surface; another portion of the etching gas is introduced above the bearing surface along the gap between the preheating assembly 200 and the susceptor 300, and the etching effect on the edge of the bearing surface can be enhanced, so that the flow rate of the etching gas introduced into the central region of the bearing surface of the susceptor 300 is reduced, the central region of the bearing surface is not easily excessively etched, impurities are not easily released from the susceptor 300, and thus the cleanliness of the semiconductor can be improved, and therefore, the production quality of the epitaxial layer of the workpiece 700 can be improved when the epitaxial growth of the workpiece 700 is performed.
In addition, since the flow rate of the etching gas below the bearing surface of the susceptor 300 and at the edge of the bearing surface of the susceptor 300 is increased, the etching effect of the lower part of the bearing surface of the susceptor 300 and at the edge of the bearing surface can be improved, and the etching effect of the semiconductor chamber is better.
In the above embodiment, the preheating component 200 is impacted by the reaction gas in the semiconductor chamber, which easily causes the position of the preheating component 200 to shift, and thus the uniformity in and between the chips is changed. To this end, in another alternative embodiment, one of the bottom end of the preheating assembly 200 and the top end of the supporting part 400 may be provided with a positioning groove 213, the other one may be provided with a positioning protrusion 410, at least part of the positioning protrusion 410 is located in the positioning groove 213, and the positioning protrusion 410 and the positioning groove 213 may cooperate with each other to achieve positioning. In this scheme, the positioning protrusion 410 and the positioning groove 213 can limit the preheating assembly 200 from sliding relative to the support 400, so as to avoid the variation of the uniformity in and between the chips and improve the process stability.
In addition, the positioning protrusion 410 can be directly inserted into the positioning groove 213, so that the positioning manner is simple and reliable. The positioning protrusion 410 and the positioning groove 213 are simply processed, so that the semiconductor chamber is convenient to manufacture and has low cost.
Further, the number of the positioning protrusions 410 may be plural, the number of the positioning grooves 213 may be plural, the positioning grooves 213 and the positioning protrusions 410 are all disposed around the circumference of the preheating assembly 200 at intervals, and the positioning protrusions 410 are in one-to-one correspondence with the positioning grooves 213. In this aspect, the plurality of positioning protrusions 410 and the plurality of positioning grooves 213 together position the installation position of the preheating assembly 200, further reducing the possibility of the preheating assembly 200 sliding relative to the support 400. In addition, the positioning method can also improve the positioning precision between the preheating assembly 200 and the base 300 so as to improve the inter-sheet uniformity of the workpiece 700.
Alternatively, the positioning groove 213 may be provided at the bottom end of the preheating assembly 200, and the positioning groove 213 may have a diameter of 5mm and a depth of 6mm. The positioning protrusion 410 may be disposed at the top end of the support 400, and the positioning protrusion 410 may have a height of 5mm and a height of 4mm, at which time the size of the positioning protrusion 410 is slightly smaller than the size of the positioning groove 213, and the positioning protrusion 410 may be easily inserted into the positioning groove 213, so that the positioning groove 213 may not interfere with the positioning protrusion 410 when being engaged therewith, thereby improving the reliability of the assembly of the positioning protrusion 410 and the positioning groove 213. It should be noted that, when the size difference between the positioning groove 213 and the positioning protrusion 410 is large, the positioning effect between the positioning protrusion 410 and the positioning groove 213 is easily reduced, so that the size of the positioning protrusion 410 and the positioning groove 213 may meet the assembly condition, and the difference is not easily excessive.
Alternatively, the preheating module 200 may be directly disposed on the lower arch 120 of the housing 100, that is, the lower arch 120 serves as the support 400, but the difficulty of disposing the preheating module 200 on the lower arch 120 is high due to the processing and manufacturing requirements of the semiconductor chamber, and for this purpose, the support 400 may be additionally provided to support the preheating module 200, that is, the support 400 is disposed on the lower arch 120, and the preheating module 200 is disposed on the support 400. The supporting portion 400 is made of quartz material, the supporting portion 400 is an annular structural member, and the central axis of the supporting portion 400 coincides with the central axis of the preheating assembly 200.
To further enhance the preheating effect of the preheating assembly 200, in an alternative embodiment, the preheating assembly 200 may include a lower annular portion 210 and an upper annular portion 220, the upper annular portion 220 extending radially inward along the top of the lower annular portion 210, and the vent holes 212 may be open in the lower annular portion 210, and the bearing surface of the susceptor 300 may be located between the openings of the vent holes 212 toward the susceptor 300 and the upper annular portion 220 when the susceptor 300 is in the process position. The preheating component 200 with the structure forms an enclosed structure, so that a relatively stable and independent accommodating space is formed inside the preheating component 200, a thermal field formed inside the preheating component 200 is more stable and more uniform, and the preheating effect of the preheating component 200 on the base 300 and the workpiece 700 to be processed is better.
Alternatively, the lower annular portion 210 and the upper annular portion 220 may be integrally formed, although other connection methods may be used, and are not limited herein.
In an alternative embodiment, the inner diameter of the upper annular portion 220 may be smaller than the outer diameter of the base 300. That is, the inner edge of the upper ring portion 220 may cover the outer edge of the base 300. In this embodiment, after the etching gas enters the vent holes 212, a part of the etching gas is input above the bearing surface along the gap between the lower annular portion 210 and the susceptor 300, and after the part of the etching gas touches the upper annular portion 220, the part of the etching gas flows along the inner sidewall of the upper annular portion 220, so that the etching gas can be guided to the edge of the susceptor 300, thereby improving the etching performance of the edge of the susceptor 300. At the same time, the flow of growth gas input to the edge of the susceptor 300 can be reduced, avoiding deposition of a thicker film layer at the edge of the susceptor 300.
In an alternative embodiment, the outer sidewall of the lower end of the vent hole 212 of the lower annular portion 210 is annularly provided with a flow guide portion 214, and the outer diameter of the flow guide portion 214 gradually increases in the direction from the vent hole 212 to the bottom end of the lower annular portion 210. In this embodiment, the flow guiding portion 214 can guide the etching gas to the vent hole 212, so as to improve the flow of the etching gas entering the vent hole 212, and further improve the etching performance of the semiconductor chamber. In addition, in the direction from the vent hole 212 to the bottom end of the lower annular portion 210, the outer diameter of the flow guiding portion 214 is gradually increased, that is, the area of the cross section of the flow guiding portion 214 is gradually increased, so that the aggregation effect of the flow guiding portion 214 with such a structure is better, and the flow guiding effect of the flow guiding portion 214 is further improved. Alternatively, the flow guide 214 may be a portion of the outer side of the lower annular portion 210, thereby making the preheating assembly 200 simple and compact.
Alternatively, the distance between the inner diameter of the upper ring portion 220 and the outer diameter of the upper ring portion 220 may be 20mm to 25mm, and the outer sidewall of the upper ring portion 220 may be flush with the outer sidewall of the lower ring portion 210. The inner diameter of the upper ring-shaped portion 220 is smaller than the outer diameter of the base 300 by a dimension of between 5mm and 10mm, that is, the inner side edge of the upper ring-shaped portion 220 covers the outer edge of the base 300 by a distance of between 5mm and 10mm. Of course, the size of the inner diameter of the upper annular portion 220 smaller than the outer diameter of the base 300 may be of other values, which are not limited herein.
In the above embodiment, the etching effect of the center region of the bearing surface and the edge of the susceptor 300 may be adjusted by adjusting the difference between the inner diameter of the upper ring portion 220 and the outer diameter of the susceptor 300. In practice, the outer diameter of the base 300 is fixed, and thus the above effect can be achieved by adjusting the size of the inner diameter of the upper ring portion 200.
Further, the distance between the top end of the lower annular portion 210 and the bottom end of the lower annular portion 210 may be greater than the distance between the top end of the upper annular portion 220 and the bottom end of the upper annular portion 220. At this time, the distance between the top end of the lower ring portion 210 and the bottom end of the lower ring portion 210 is the height of the lower ring portion 210, and the distance between the top end of the upper ring portion 220 and the bottom end of the upper ring portion 220 is the height of the upper ring portion 220. In this aspect, the height of the lower annular portion 210 is greater than the height of the upper annular portion 220, such that the preheating assembly 200 has a large internal space without changing the overall height of the preheating assembly 200, such that the preheating assembly 200 has a large process window. Alternatively, the distance between the top end of the lower annular portion 210 and the bottom end of the lower annular portion 210 may be between 15mm and 18mm, and the distance between the top end of the upper annular portion 220 and the top end of the upper annular portion 220 may be between 4mm and 6mm.
Further, the distance between the outer diameter of the lower annular portion 210 and the inner diameter of the lower annular portion 210 may be greater than the distance between the top end of the upper annular portion 220 and the bottom end of the upper annular portion 220, and the wall thickness of the lower annular portion 210 is greater at this time, so that the upper annular portion 210 has a better supporting effect, thereby improving the overall strength of the preheating assembly 200. Alternatively, the distance between the outer diameter of the lower annular portion 210 and the inner diameter of the lower annular portion 210 may be between 6mm and 8 mm.
In an alternative embodiment, a surface of the base 300 facing the upper ring portion 220 may be provided with a receiving groove 310, and the workpiece 700 may be located in the receiving groove 310. In this solution, the to-be-processed workpiece 700 may be accommodated in the accommodating groove 310, and the to-be-processed workpiece 700 is not exposed on the surface of the base 300, so that the lateral airflow is not easy to push the to-be-processed workpiece 700 to slide, thereby further improving the uniformity in and between sheets of the to-be-processed workpiece 700, and further improving the yield of the to-be-processed workpiece 700.
Further, the bottom of the accommodating groove 310 may be provided with a plurality of vent holes 311 penetrating the bottom of the groove, and the vent holes 311 are disposed opposite to the work piece 700. When the to-be-machined workpiece 700 is placed in the accommodating groove 310, the to-be-machined workpiece 700 can press out the gas in the accommodating groove 310 through the exhaust hole 311, so that the pressure between the to-be-machined workpiece 700 and the bottom wall of the accommodating groove 310 is reduced, the pressure in the preheating assembly 200 is higher, the friction between the accommodating groove 310 and the to-be-machined workpiece 700 is increased, the to-be-machined workpiece 700 is not easy to slide laterally, and the uniformity in and among sheets of the to-be-machined workpiece 700 is improved.
Alternatively, the number of the vent holes 311 may be 20 to 30, and the diameter of the vent holes 311 may be 5 to 7mm. Of course, other numbers may be used for the number of the exhaust holes 311, and other numbers may be used for the diameter of the exhaust holes 311, which is not limited herein.
In another alternative embodiment, the bottom of the accommodating groove 310 is provided with a thimble hole 312, and when the processing of the workpiece 700 is completed, the thimble can penetrate through the thimble hole 312 to jack up the workpiece 700, so as to facilitate the manipulator to grasp the workpiece 700.
In another embodiment, the housing 100 includes an inlet block 131, the inlet block 131 for introducing a reactant gas into the semiconductor chamber. The height of the air intake block 131 may be lower than the height of the top end of the preheating assembly 200 and higher than the height of the vent holes 212. At this time, the air inlet block 131 is located between the top end of the preheating component 200 and the air vent 212, so that the distance between the top end of the preheating component 200 and the air inlet block 131 and the distance between the air vent 212 and the air inlet block 131 are not greatly different, so that most of the reaction gas with lighter mass can easily climb to the top end of the preheating component 200, and the flow rate of the reaction gas on the upper portion of the preheating component 200 is not easily affected.
Further, the gas inlet block 131 inputs the growth gas and the etching gas to the semiconductor chamber through the growth gas channel 510 and the etching gas channel 520, respectively, the growth gas channel 510 may face the preheating assembly 200, and the etching gas channel 520 may face the edge of the semiconductor chamber. That is, the growth gas enters the semiconductor chamber along the horizontal direction, and hydrogen is mixed in the growth gas, so that most of the growth gas is easy to climb to the upper part of the semiconductor chamber, and a small part of the growth gas which ascends to the upper part of the semiconductor chamber enters the semiconductor chamber through the vent holes 212 to form mixed flow above the base 300, thereby improving the film forming quality of the workpiece 700 to be processed.
The direction of ventilation of the etching gas channel 520 is toward the edge of the semiconductor chamber. That is, the etching gas diffuses toward the center of the semiconductor chamber along the edge of the semiconductor chamber, and in this scheme, the etching gas can etch the inner sidewall of the semiconductor chamber, thereby improving the etching performance of the semiconductor chamber. At the same time, a substantial portion of the heavier etching gas may enter the preheating assembly 200 through the vent holes 212, thereby allowing for adequate etching of the underside of the load bearing surface of the susceptor 300 and the edges of the susceptor 300.
In a specific embodiment, the growth gas channel 510 may include a first sub-channel 511 and a second sub-channel 512, the etching gas channel 520 may include a third sub-channel 521 and a fourth sub-channel 522, the first sub-channel 511 and the second sub-channel 512 may be located between the third sub-channel 521 and the fourth sub-channel 522, and an axial direction of the first sub-channel 511 is parallel to an axial direction of the second sub-channel 512, that is, a ventilation direction of the first sub-channel 511 is the same as a ventilation direction of the second sub-channel 512. The axis of the third sub-channel 521 intersects the axis of the fourth sub-channel 522, and the direction of ventilation of the third sub-channel 521 intersects the direction of ventilation of the fourth sub-channel 522. In this scheme, the semiconductor chamber adopts a two-way four-zone ventilation structure, which can not only improve the etching rate of the semiconductor chamber, but also improve the growth rate and uniformity of the epitaxial layer of the workpiece 700 to be processed.
Based on the semiconductor chamber of any one of the embodiments of the present invention, the embodiment of the present invention also discloses a semiconductor device, which has the semiconductor chamber of any one of the embodiments.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Claims (10)
1. The semiconductor chamber is characterized by comprising a shell (100), a preheating component (200) and a base (300), wherein the preheating component (200) is arranged in the shell (100), the base (300) is used for bearing a workpiece (700) to be processed and can be lifted, and the preheating component (200) is arranged around the base (300) and is used for preheating the semiconductor chamber;
when the base (300) is at a process position, the vent hole (212) is lower than the bearing surface of the base (300) towards the opening of the base (300), and the vent hole (212) is used for enabling etching gas to be input below the bearing surface and to be input above the bearing surface along a gap between the preheating assembly (200) and the base (300);
the preheating assembly (200) comprises a lower annular portion (210) and an upper annular portion (220), the upper annular portion (220) extends radially inwards along the top of the lower annular portion (210), the vent holes (212) are formed in the lower annular portion (210), and when the base (300) is in a process position, a bearing surface of the base (300) is located between an opening of the vent holes (212) towards the base (300) and the upper annular portion (220).
2. The semiconductor chamber according to claim 1, further comprising a support portion (400), the support portion (400) being disposed in the housing (100), the support portion (400) being configured to support the preheating assembly (200), one of a bottom end of the preheating assembly (200) and a top end of the support portion (400) being provided with a positioning groove (213), the other being provided with a positioning protrusion (410), at least part of the positioning protrusion (410) being located in the positioning groove (213), the positioning protrusion (410) being mutually engaged with the positioning groove (213) for positioning.
3. The semiconductor chamber according to claim 2, wherein the number of the positioning protrusions (410) is plural, the number of the positioning grooves (213) is plural, the plurality of the positioning grooves (213) and the plurality of the positioning protrusions (410) are each disposed around the circumferential direction of the preheating component (200) at intervals, and the positioning protrusions (410) are in one-to-one correspondence with the positioning grooves (213).
4. The semiconductor chamber of claim 1, wherein an inner diameter of the upper annular portion (220) is smaller than an outer diameter of the susceptor (300).
5. The semiconductor chamber according to claim 1, wherein an outer sidewall of a lower end of the vent hole (212) of the lower annular portion (210) is annularly provided with a flow guide portion (214), and an outer diameter of the flow guide portion (214) gradually increases in a direction from the vent hole (212) to a bottom end of the lower annular portion (210).
6. The semiconductor chamber of claim 1, wherein a distance between a top end of the lower annular portion (210) to a bottom end of the lower annular portion (210) is greater than a distance between a top end of the upper annular portion (220) to a bottom end of the upper annular portion (220); and/or the number of the groups of groups,
the distance between the outer diameter of the lower annular portion (210) and the inner diameter of the lower annular portion (210) is greater than the distance between the top end of the upper annular portion (220) and the bottom end of the upper annular portion (220).
7. The semiconductor chamber according to claim 1, wherein a receiving groove (310) is formed in a surface of the base (300) facing the upper annular portion (220), the workpiece (700) to be processed is located in the receiving groove (310), a plurality of vent holes (311) penetrating through the groove bottom are formed in a groove bottom of the receiving groove (310), and the vent holes (311) are arranged opposite to the workpiece (700).
8. The semiconductor chamber according to any one of claims 1 to 7, wherein the housing (100) comprises an air intake block (131), the air intake block (131) having a height lower than a height of a top end of the preheating assembly (200) and higher than a height of the vent hole (212); the air inlet block (131) inputs growth gas and etching gas to the semiconductor chamber through a growth gas channel (510) and an etching gas channel (520), the growth gas channel (510) faces the preheating component (200), and the etching gas channel (520) faces the edge of the semiconductor chamber.
9. The semiconductor chamber of claim 8, wherein the growth gas channel (510) comprises a first sub-channel (511) and a second sub-channel (512), the etching gas channel (520) comprises a third sub-channel (521) and a fourth sub-channel (522), the first sub-channel (511) and the second sub-channel (512) are located between the third sub-channel (521) and the fourth sub-channel (522), an axis of the first sub-channel (511) is parallel to an axis of the second sub-channel (512), and an axis of the third sub-channel (521) intersects an axis of the fourth sub-channel (522).
10. A semiconductor device comprising the semiconductor chamber of any one of claims 1 to 9.
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| JP2006049503A (en) * | 2004-08-03 | 2006-02-16 | Sumco Corp | Epitaxially growing apparatus |
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| US8512472B2 (en) * | 2008-11-13 | 2013-08-20 | Applied Materials, Inc. | Method and apparatus to enhance process gas temperature in a CVD reactor |
| DE102011007632B3 (en) * | 2011-04-18 | 2012-02-16 | Siltronic Ag | Device useful for depositing material layer derived from process gas on substrate disc, comprises reactor chamber, which is bound by upper cover, lower cover and side wall, susceptor, preheat ring, chuck, and spacer |
| TWI648427B (en) * | 2013-07-17 | 2019-01-21 | 應用材料股份有限公司 | Structure for improved gas activation for cross-flow type thermal cvd chamber |
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| JP2006049503A (en) * | 2004-08-03 | 2006-02-16 | Sumco Corp | Epitaxially growing apparatus |
| CN105981142A (en) * | 2013-12-06 | 2016-09-28 | 应用材料公司 | Apparatus for self centering preheat member |
| CN107636816A (en) * | 2015-01-22 | 2018-01-26 | Lg矽得荣株式会社 | The method being prepared operated again to the reactor for growing epitaxial wafer |
| CN110004487A (en) * | 2017-12-25 | 2019-07-12 | 胜高股份有限公司 | The manufacturing method of epitaxial growth device and the semiconductor epitaxial wafer using it |
| CN111599716A (en) * | 2020-05-06 | 2020-08-28 | 北京北方华创微电子装备有限公司 | Preheating ring for epitaxial growth equipment and epitaxial growth equipment |
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