CN112086384A - Dry etching machine table and manufacturing method of semiconductor device - Google Patents
Dry etching machine table and manufacturing method of semiconductor device Download PDFInfo
- Publication number
- CN112086384A CN112086384A CN202011044728.6A CN202011044728A CN112086384A CN 112086384 A CN112086384 A CN 112086384A CN 202011044728 A CN202011044728 A CN 202011044728A CN 112086384 A CN112086384 A CN 112086384A
- Authority
- CN
- China
- Prior art keywords
- dry etching
- wafer
- gas
- cooling
- cooling table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
The invention provides a dry etching machine table and a manufacturing method of a semiconductor device.A gas supply pipeline for introducing purging gas is arranged above a cooling table of the dry etching machine table, an air exhaust pipeline is arranged below the cooling table, a wafer which is subjected to a dry etching process is conveyed to the cooling table, the purging gas is introduced into the wafer for purging, reaction gas brought out by the dry etching process is purged, the polymer or by-product generated by the reaction of the dry etching process is prevented from reacting with water vapor in the air to cause defects, and gas residue on the wafer which is subjected to the dry etching process is prevented from reacting with photoresist on the wafer which is not subjected to the dry etching process, so that the etching morphology is influenced; the method does not need to use a cache table for operation, avoids the influence on the WPH of the machine table due to the shortage of the cache table, and is beneficial to improving the production efficiency.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a dry etching machine and a manufacturing method of a semiconductor device.
Background
In the manufacturing process of semiconductors, two basic etching processes are involved: dry etching and wet etching. Among them, dry etching is a process in which a wafer is exposed to plasma generated from an etching gas, the plasma reacts with the wafer physically and/or chemically, thereby selectively removing unnecessary materials from the surface of the wafer, and is widely used because the dry etching can make a circuit pattern finer.
But inevitably, reaction gases generated during dry etching, e.g. HBr, Cl2. Firstly, the gases are easy to form polymers to adhere to the surface of the wafer to form defects (the probability of generating the defects is different under different process conditions); secondly, the reaction gas attached to the surface of the wafer is easy to react with the photoresist, so that a micro mask is formed on the surface of the wafer which is not subjected to the etching process, and the etched pattern is influenced. The problem of defects is mainly solved by controlling the Q-time (which refers to the time required between different process steps), but there is no certain probability of defects occurring. For the cross contamination problem generated by the reaction gas remained on the surface of the wafer, the existing industry installs a buffer stage at the machine station end to solve the problem, the wafer is firstly transferred to the buffer stage before entering the machine station, the wafer is taken out from the buffer stage and enters the process chamber of the machine station, and the processed wafer is separated from the unprocessed wafer, but the phenomenon of process chamber idling caused by insufficient number of the buffer stages exists, for example, the etching machine station supports four process chamber configurations, and the whole machine has only two buffer stages, so that the phenomenon of process chamber idling caused by insufficient buffer stage is easily generated, the WPH (wafer per hour wafer output) is influenced, the production efficiency is reduced, and the productivity is influenced.
Disclosure of Invention
The invention aims to provide a dry etching machine and a manufacturing method of a semiconductor device, and aims to solve the problems of idling of a process cavity and low production efficiency caused by insufficient buffer tables in the prior art.
In order to solve the above technical problem, the present invention provides a method for manufacturing a semiconductor device, including:
conveying the wafer into a process cavity of a dry etching machine, and performing dry etching on the wafer;
taking the wafer which is subjected to the dry etching process out of the process cavity, conveying the wafer to a cooling table of the dry etching machine, introducing purge gas into the cooling table, and extracting the gas of the cooling table by using an air extraction device; and the number of the first and second groups,
and transferring the wafer from the cooling to a front opening wafer transfer box.
Optionally, the purge gas is introduced above the cooling table.
Optionally, the purge gas is heated nitrogen.
Based on the same invention concept, the invention also provides a dry etching machine table which comprises a process cavity, a conveying device and a cooling table, wherein the wafer is conveyed from the process cavity to the cooling table through the conveying device, a gas supply pipeline, a gas extraction pipeline and a gas extraction device are arranged at the cooling table, the gas supply pipeline is used for introducing purge gas into the cooling table, and the gas extraction device is used for extracting the gas of the cooling table through the gas extraction pipeline.
Optionally, the air extracting device is a dry pump.
Optionally, the purge gas is heated nitrogen.
Optionally, the air supply duct is arranged directly above the cooling table.
Optionally, the number of the gas supply ducts is one.
Optionally, the number of gas supply line is a plurality of, and is a plurality of gas supply line is even setting in the cooling platform top.
Optionally, the air extraction duct is arranged right below the cooling table.
Compared with the prior art, the invention has the following beneficial effects:
according to the dry etching machine table and the manufacturing method of the semiconductor device, the gas supply pipeline for introducing the purging gas is arranged above the cooling table of the dry etching machine table, the dry pump is arranged below the cooling table, the wafer subjected to the dry etching process is conveyed to the cooling table, and the heated N is introduced into the wafer2Purging, namely purging the reaction gas brought out by the dry etching process to prevent the polymer or the byproduct generated by the reaction of the dry etching process from reacting with the water vapor in the air to cause the generation of defects and prevent the defects from being generatedGas residue on the wafer after the dry etching process is finished reacts with the photoresist on the wafer without the dry etching process, so that the etching morphology is influenced; the method does not need to use a cache table for operation, avoids the influence on the WPH of the machine table due to the shortage of the cache table, and is beneficial to improving the production efficiency.
Drawings
FIG. 1 is a schematic diagram of a wafer with photoresist damaged by residual gas in the prior art;
FIG. 2 is a schematic structural diagram of a wafer after dry etching in which a photoresist is damaged by residual gas in the prior art;
FIG. 3 is a schematic diagram of a wafer structure according to an embodiment of the invention;
fig. 4 is a flowchart of a method of manufacturing a semiconductor device in an embodiment of the present invention;
FIG. 5 is a schematic diagram of a dry etching apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a cooling stage of the dry etching apparatus in the embodiment of the present invention;
wherein the content of the first and second substances,
10-wafer, 100-substrate, 110-dielectric layer, 111-silicon oxide layer, 112-SiN layer, 113-SiON layer, 120-sacrificial layer, 131-photoresist opening, 132-first etch pattern, 132 a-damaged edge, 133-second etch pattern,
20-a dry etching machine station, 201-a feeding waiting area 201, 202, 204-a process chamber, 205-a cooling station, 206-a gas supply pipeline and 207-an air exhaust pipeline.
Detailed Description
The inventors have found that a reaction gas, such as hydrogen bromide (HBr), chlorine (Cl) and the like, is generated during the dry etching process2) The gases are easy to form polymers to adhere to the surface of the wafer to form defects, and the defect generation principle is as follows:
the wafer after dry etching enters a cooling table H2O changes from a gas state to a liquid state and reacts with the surface of the wafer to complete the process, as shown in formula (1)
H2After O changes from gas to liquid, it reacts with Si-Br on the wafer surface to produce Si-OH and liquid HBr, as shown in formula (2), liquid HBr and 2H2The O generates a defect reaction on the surface of the wafer after the dry etching to generate HBr.2H2O, e.g. formula (3), HBr.2H2O can damage the photoresist on the wafer that has not been processed to form a micro-mask, affecting the etched pattern.
H2O(ad)+Si-Br→Si-OH+HBr(ad) (2)
The liquid HBr generated by the chemical reaction formula (2) is also vaporized into gaseous HBr, as shown in the chemical reaction formula (4), and enters the wafer waiting for entering the dry etching process, and reacts on the wafer waiting for performing the dry etching process, as shown in the chemical reaction formulas (5) and (6), after the gaseous HBr enters the wafer waiting for performing the dry etching process, the gaseous HBr is changed into the liquid HBr, the liquid HBr and 2H2O reacts on the surface of the wafer waiting for the dry etching process to generate HBr.2H2O，HBr·2H2O can damage the photoresist on the wafer which is not processed yet to form a micro-mask, and the etched pattern is influenced.
HBr(ad)→HBr(g) (4)
HBr(g)→HBr(ad) (5)
FIG. 1 is a schematic diagram of a wafer with photoresist damaged by residual gas in the prior art; fig. 2 is a schematic structural diagram of a wafer after dry etching in which a photoresist is damaged by residual gas in the prior art. As shown in fig. 1, the wafer 10 includes a substrate 100, a dielectric layer 110 and a sacrificial layer 120 in sequence, wherein the dielectric layer 110 includes, for example, a silicon oxide layer 111, a silicon nitride (SiN) layer 112 and a silicon oxynitride (SiON) layer 113 sequentially formed on the substrate 100. When the sacrificial layer 120 of the wafer without the dry etching process is damaged by the reaction gas after the dry etching process to form the photoresist opening 131, after the wafer 10 is subjected to the dry etching process, the lower dielectric layer 110 corresponding to the photoresist opening 131, specifically, the oxide layer 111, the SiN layer 112, and the SiON layer 113 are etched to form the first etching pattern 132, where the first etching pattern 132 is not a pre-designed etching pattern, and if the photoresist damage occurs at the edge of the pre-designed etching pattern, the etching pattern is irregular, for example, a damaged edge 132a, and if the photoresist damage occurs at the area of the non-pre-designed etching pattern, the area which should not be etched is etched, so that the pattern morphology after etching is affected.
In order to solve the problems that on a wafer which is subjected to a dry etching process, a polymer or a byproduct generated by a reaction of the dry etching process reacts with water vapor in the air to cause defects, and gas residue on the wafer which is subjected to the dry etching process reacts with photoresist on the wafer which is not subjected to the dry etching process to further influence the etching morphology, in the prior art, a buffer table is arranged at the end of a machine table, the wafer is firstly conveyed onto the buffer table before entering the machine table, a wafer is taken out from the buffer table to enter a process cavity of the machine table, the wafer which is subjected to the dry etching process is separated from the wafer which is not subjected to the dry etching process, the method can protect the photoresist of the wafer which is not subjected to the dry etching process from being damaged, but the wafer which is subjected to the dry etching process cannot avoid the reaction of the polymer or the byproduct generated by the reaction of the dry etching process with the water vapor, the defects are caused, in addition, the method for avoiding the defects by increasing the buffer tables has the phenomenon that the process cavity idles due to the insufficient buffer tables, the WPH is influenced, and the production efficiency is reduced.
Based on the discovery, the invention provides the dry etching machine and the manufacturing method of the semiconductor device, wherein the gas supply pipeline which can be filled with the purging gas is arranged above the cooling platform of the dry etching machine, and the gas supply pipeline is arranged below the cooling platformAn air extractor is arranged to convey the wafer after the dry etching process to a cooling table, and heated N is introduced into the wafer2And purging, namely purging the reaction gas brought out by the dry etching process to prevent the polymer or by-product generated by the reaction of the dry etching process from reacting with water vapor in the air to cause defects on the wafer which is subjected to the dry etching process, and preventing the gas residue on the wafer which is subjected to the dry etching process from reacting with the photoresist on the wafer which is not subjected to the dry etching process to further influence the etching morphology.
The following describes a dry etching machine and a method for manufacturing a semiconductor device according to the present invention in detail with reference to the accompanying drawings and specific embodiments. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
An embodiment of the present invention provides a method for manufacturing a semiconductor device, as shown in fig. 3, the method including the steps of:
step S01: conveying the wafer into a process cavity of a dry etching machine, and performing dry etching on the wafer;
specifically, referring to fig. 4, a wafer is provided, where the wafer includes a substrate 100, and a dielectric layer 110 and a photoresist layer 120 are formed on the substrate 100. The substrate 100 may be a silicon-based semiconductor or a silicon-on-insulator (SOI) substrate, which is exemplified as a silicon substrate in the present embodiment. The dielectric layer 110 includes, for example, a silicon oxide layer 111, a silicon nitride layer 112, and a silicon oxynitride (SiON) layer 113 sequentially formed on the substrate 100. The total thickness of the dielectric layer 110 may be 600nm to 700 nm. The silicon oxide layer 111 may be formed by a thermal oxidation method, and the silicon nitride layer 112 and the SiON layer 113 may be formed by Chemical Vapor Deposition (CVD). The sacrificial layer 120 extends over the dielectric layer 110 on the surface of the substrate 100. The material of the sacrificial layer 120 is, for example, a photoresist, a polyimide, or a Bottom Anti-Reflective Coatings (BARC) with good filling property. In this embodiment, the sacrificial layer 120 is made of a photoresist, which has good fluidity and is easy to remove in a subsequent removal process. Other fillers may be used as the sacrificial layer 120 in other embodiments of the present invention. Subsequently, the sacrificial layer 120 and the dielectric layer 110 are etched to form a second etch pattern 133 exposing 100.
Step S02: taking the wafer which is subjected to the dry etching process out of the process cavity of the dry etching machine, conveying the wafer to a cooling table of the dry etching machine, introducing purge gas into the cooling table, and extracting the gas of the cooling table by using an air extraction device;
then, with continued reference to fig. 4, the wafer 10 after the dry etching process is transferred to a cooling stage 205 of the dry etching machine for a pre-treatment process, and the wafer 10 after the dry etching process generates reaction gases such as hydrogen bromide (HBr) and chlorine (Cl)2) And the gas is introduced into the pretreatment process through a gas supply pipeline 206 above the cooling table 205, a purge gas (such as heated nitrogen) is used for purging and taking away the reaction gas generated in the dry etching process, an exhaust pipeline 207 is arranged below the cooling table 205, and the dry pump pumps the gas away through the exhaust pipeline 207. For example, the cooling stage of the dry etching machine has a function of storing the wafer 10, that is, the wafer 10 after the dry etching process is finished can be set in advance at the time of the cooling stage 205. N can be realized by connecting the air supply pipeline 206 above the cooling platform 205 and the air exhaust pipeline 207 below the cooling platform 2052The function of purging the surface of the wafer 10. The heating function can be realized in a mode that a heating pipe is wrapped in the air supply pipeline, the temperature range of the heated nitrogen is 40-80 ℃, and N is2Purging is continued and the dry pump pumps gas away through the pumping line 207 to complete the processing of the surface of the wafer 10. Of course, the purge gas (nitrogen in this embodiment) may be preheated by the heating device, and then the preheated purge gas may be introduced into the cooling stage 205 through the gas supply line 206.
As can be seen from fig. 4, the etch pattern of the wafer in which the photoresist was not damaged is the same as the pre-designed etch pattern. Through the pretreatment, the problem that on a wafer which is subjected to a dry etching process, a polymer or a byproduct generated by the reaction of the dry etching process reacts with water vapor in the air to cause defects can be prevented, and the problem that the gas residue on the wafer which is subjected to the dry etching process reacts with a photoresist on the wafer which is not subjected to the dry etching process to influence the etching morphology is prevented.
Step S03: and transferring the wafer to a front-opening wafer transfer box.
Specifically, after the steps S01 and S02, the wafer may be transferred to the foup. The wafer can be transferred to the front-opening wafer transfer box through the transfer device carried by the dry etching process, and no additional transfer device is needed.
Fig. 5 is a schematic structural diagram of a dry etching machine in an embodiment of the invention. As shown in fig. 5, the dry etching machine 20 of the present embodiment further includes a feeding waiting area 201, a process chamber 202, a process chamber 204, and a cooling table 205, and the dry etching machine 20 further includes a conveying device (not shown in fig. 5) for conveying the wafer 10 having completed the dry etching process from the process chamber 202 or the process chamber 203 or the process chamber 204 to the cooling table 205. The cooling stage 205 is a box-shaped device for carrying the wafer 10 after dry etching.
Fig. 6 is a schematic structural diagram of a cooling table of a dry etching machine in an embodiment of the invention. As shown in fig. 6, a gas supply pipe 206 is disposed above the cooling stage 205, and the gas supply pipe 206 may be filled with a purge gas such as heated nitrogen, for example, by heating the gas supply pipe 206 so that the purge gas reaches a predetermined temperature. The supply air duct 206 may be provided in one or more. When one air supply duct 206 is provided, it is preferable to arrange the air outlet of the air supply duct 206 directly above the cooling stage. When a plurality of air supply ducts 206 are provided, they are preferably evenly distributed over the cooling stage 205. An air extractor, such as a dry pump, is connected below the cooling stage 205, and the dry pump extracts the reaction gas in the cooling stage 205 through an air extraction pipe 207.
Of course, in practical implementation, the air outlet of the air supply duct 206 and the air exhaust duct 207 may also be disposed at a side of the cooling platform 205, which is not limited in the present invention.
In summary, the present invention provides a dry etching machine and a method for manufacturing a semiconductor device, wherein the wafer 10 having completed the dry etching process is transferred to the cooling platform 205, and heated N is introduced into the wafer 10 having completed the dry etching process2Purging, the pumping pipeline 207 below the cooling platform 205 pumps away the reaction gas generated by the wafer 10 in the dry etching process, so as to prevent the polymer or by-product generated by the reaction of the dry etching process from reacting with the water vapor in the air to cause defects, and prevent the gas residue on the wafer 10 after the dry etching process is completed from reacting with the photoresist on the wafer 10 without the dry etching process, thereby affecting the etching morphology. In addition, the method can avoid the phenomenon of idle running of the process chamber caused by insufficient buffer tables in the prior art, and improves the production efficiency.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method of manufacturing a semiconductor device, comprising:
conveying the wafer into a process cavity of a dry etching machine, and performing dry etching on the wafer;
taking the wafer which is subjected to the dry etching process out of the process cavity, conveying the wafer to a cooling table of the dry etching machine, introducing purge gas into the cooling table, and extracting the gas of the cooling table by using an air extraction device; and the number of the first and second groups,
and transferring the wafer from the cooling to a front opening wafer transfer box.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the purge gas is introduced above the cooling stage.
3. The method for manufacturing a semiconductor device according to claim 2, wherein the purge gas is heated nitrogen gas.
4. The utility model provides a dry etching board, its characterized in that, includes process chamber, conveyer and cooling table, through conveyer follows the wafer process chamber conveys to the cooling table, cooling table department is provided with gas supply line, bleed-off line and air exhaust device, gas supply line be used for to the cooling table lets in and sweeps gas, air exhaust device passes through the bleed-off line extraction the gas of cooling table.
5. The dry etching machine station as claimed in claim 4, wherein the air-extracting device is a dry pump.
6. The dry etching machine of claim 4, wherein the purge gas is heated nitrogen.
7. The dry etching machine table as claimed in any one of claims 4 to 6, wherein the gas supply pipeline is disposed right above the cooling table.
8. The dry etching machine platform of claim 7, wherein the number of the gas supply pipes is one.
9. The dry etching machine table as claimed in claim 7, wherein the number of the gas supply pipes is plural, and the plural gas supply pipes are uniformly arranged above the cooling table.
10. The dry etching machine table as claimed in any one of claims 4 to 6, wherein the air exhaust duct is disposed directly below the cooling table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011044728.6A CN112086384A (en) | 2020-09-28 | 2020-09-28 | Dry etching machine table and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011044728.6A CN112086384A (en) | 2020-09-28 | 2020-09-28 | Dry etching machine table and manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112086384A true CN112086384A (en) | 2020-12-15 |
Family
ID=73739927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011044728.6A Pending CN112086384A (en) | 2020-09-28 | 2020-09-28 | Dry etching machine table and manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112086384A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030060030A1 (en) * | 2001-09-25 | 2003-03-27 | Kwang-Myung Lee | Method for processing a wafer and apparatus for performing the same |
| KR20080060781A (en) * | 2006-12-27 | 2008-07-02 | 세메스 주식회사 | Apparatus and method for dry etching of substrates |
| CN101740338A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Method for removing film |
| CN102768971A (en) * | 2012-07-04 | 2012-11-07 | 上海华力微电子有限公司 | Etcher table for eliminating crystalline condensation defect |
| CN103219223A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Device and method for removing wafer residual hydrogen bromide |
| CN104409393A (en) * | 2014-11-17 | 2015-03-11 | 上海华力微电子有限公司 | Wafer purification device, etching machine and Damascus etching method |
| CN105529278A (en) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | Device for processing semiconductor structure |
| CN207068800U (en) * | 2017-05-05 | 2018-03-02 | 武汉新芯集成电路制造有限公司 | A kind of delivery air air lock |
| CN108091556A (en) * | 2017-11-09 | 2018-05-29 | 上海华力微电子有限公司 | Etching process |
-
2020
- 2020-09-28 CN CN202011044728.6A patent/CN112086384A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030060030A1 (en) * | 2001-09-25 | 2003-03-27 | Kwang-Myung Lee | Method for processing a wafer and apparatus for performing the same |
| KR20080060781A (en) * | 2006-12-27 | 2008-07-02 | 세메스 주식회사 | Apparatus and method for dry etching of substrates |
| CN101740338A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Method for removing film |
| CN102768971A (en) * | 2012-07-04 | 2012-11-07 | 上海华力微电子有限公司 | Etcher table for eliminating crystalline condensation defect |
| CN103219223A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Device and method for removing wafer residual hydrogen bromide |
| CN105529278A (en) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | Device for processing semiconductor structure |
| CN104409393A (en) * | 2014-11-17 | 2015-03-11 | 上海华力微电子有限公司 | Wafer purification device, etching machine and Damascus etching method |
| CN207068800U (en) * | 2017-05-05 | 2018-03-02 | 武汉新芯集成电路制造有限公司 | A kind of delivery air air lock |
| CN108091556A (en) * | 2017-11-09 | 2018-05-29 | 上海华力微电子有限公司 | Etching process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20050214455A1 (en) | Post-cleaning chamber seasoning method | |
| CN107507768B (en) | Method for manufacturing semiconductor device, heat treatment apparatus, and storage medium | |
| JP2520990B2 (en) | Method for manufacturing low defect polysilicon integrated circuit | |
| US20140083979A1 (en) | Deposit removal method | |
| US20140206198A1 (en) | Deposit removal method | |
| KR20200035213A (en) | Etching method, etching apparatus, and storage medium | |
| US20050211375A1 (en) | Method of manufacturing a semiconductor device | |
| JP2023001302A (en) | Dry etching method | |
| CN112086384A (en) | Dry etching machine table and manufacturing method of semiconductor device | |
| CN112908839B (en) | Method for reducing silicon carbide wafer bow | |
| CN111540670A (en) | Wet cleaning method for wafer and manufacturing method for semiconductor device | |
| US20090317977A1 (en) | Manufacturing method for semiconductor device | |
| WO2017022086A1 (en) | Semiconductor device manufacturing method, etching method, substrate processing device and recording medium | |
| CN108447774B (en) | Method and apparatus for simultaneously removing thermal oxide film and removing deposited oxide film | |
| CN208368468U (en) | Chemical gaseous phase etching apparatus | |
| CN111799155A (en) | Method for removing photoresist layer and method for forming semiconductor device | |
| KR20210058954A (en) | Etching method, etching residue removal method, and storage medium | |
| CN215209614U (en) | Tube furnace | |
| US20100167538A1 (en) | Method for removing native oxide remaining on a surface of a semiconductor device during manufacturing | |
| KR100342393B1 (en) | a removing method of a photoresist pattern for a semiconductor device | |
| US20230178378A1 (en) | Etching method and etching apparatus | |
| US10297496B2 (en) | Method for processing target objection | |
| JP2000156351A (en) | Method of gas-cleaning reduced pressure cvd system | |
| CN113889404A (en) | Processing method and forming method of semiconductor structure | |
| CN116487247A (en) | Method for removing LP pollution of silicon wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 510000 room 701, No. 333, jiufo Jianshe Road, Zhongxin Guangzhou Knowledge City, Guangzhou City, Guangdong Province (self declaration) Applicant after: Yuexin Semiconductor Technology Co.,Ltd. Address before: 510000 room 701, No. 333, jiufo Jianshe Road, Zhongxin Guangzhou Knowledge City, Guangzhou City, Guangdong Province (self declaration) Applicant before: Guangzhou Yuexin Semiconductor Technology Co.,Ltd. |