CN111799155A - Method for removing photoresist layer and method for forming semiconductor device - Google Patents
Method for removing photoresist layer and method for forming semiconductor device Download PDFInfo
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- CN111799155A CN111799155A CN202010687536.0A CN202010687536A CN111799155A CN 111799155 A CN111799155 A CN 111799155A CN 202010687536 A CN202010687536 A CN 202010687536A CN 111799155 A CN111799155 A CN 111799155A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 230000008569 process Effects 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000004380 ashing Methods 0.000 claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 5
- 210000002381 plasma Anatomy 0.000 description 23
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a photoresist layer removing method and a semiconductor device forming method.A plasma cleaning process is carried out on a semiconductor substrate, so that the hard shell property of the surface of the photoresist layer on the semiconductor substrate can be changed, and the hard shell on the surface of the photoresist layer can be softened and can be easily removed by a subsequent ashing treatment process; and then, ashing treatment is carried out on the semiconductor substrate after the plasma cleaning process is carried out, and the whole photoresist removing process can be effectively finished through the ashing treatment process, so that the problem of photoresist residue can be solved, the defects of the semiconductor device caused by the photoresist residue can be avoided, and the stability and yield of the semiconductor device can be further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a photoresist layer removing method and a semiconductor device forming method.
Background
Currently, in a semiconductor device forming method, in a back-end-of-line (BEOL) process of a semiconductor device, a metal interconnection structure needs to be formed on a semiconductor substrate for electrically connecting devices and devices with an external circuit. The manufacturing process for forming the metal interconnection structure comprises the following steps: firstly, forming a metal layer on a semiconductor substrate, then forming a graphical photoresist layer on the metal layer, defining an etching area of the metal layer through the graphical photoresist layer, then etching the metal layer by taking the graphical photoresist layer as a mask, and finally removing the graphical photoresist layer. However, when the metal layer is formed, in order to ensure the electrical performance and the surface topography of the metal interconnection structure formed subsequently, the metal layer has a certain thickness, and accordingly, the photoresist layer also has a certain thickness, so that during the etching of the metal layer, a large amount of byproducts, such as halogen elements (e.g., chlorine) in the etching gas used during the etching of the metal layer, are generated, and the generated byproducts adhere to the surface of the photoresist layer and form a thick crust, that is, the surface of the photoresist layer is hardened, so that a hard crust is formed.
The existing photoresist layer removing process mostly adopts a high-temperature ashing process of oxygen mixed with fluorine-containing gas (such as CF4), and the purpose of removing the photoresist layer is realized by generating volatile reactants through the collision of plasmas generated by the mixed gas of the oxygen and the fluorine-containing gas on the photoresist layer. However, since the hard shell of the photoresist layer formed after the metal layer is etched is relatively hard, it is difficult to completely remove all the photoresist layers by the conventional ashing process, and relatively serious photoresist residues are easily caused, and the photoresist residues can bring many negative effects to the subsequent process, thereby reducing the stability of the semiconductor device and causing the reduction of the yield of the product. Therefore, how to provide a method for removing a photoresist layer, which can solve the problem of photoresist residue, is one of the technical problems to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a photoresist layer removing method and a semiconductor device forming method, which are used for solving the problem of photoresist residue and avoiding the defects of a semiconductor device caused by the photoresist residue.
In order to solve the above technical problem, the present invention provides a method for removing a photoresist layer, comprising:
providing a semiconductor substrate, wherein a photoresist layer to be removed is formed on the semiconductor substrate;
performing a plasma cleaning process on the semiconductor substrate to clean the surface of the photoresist layer;
and performing ashing treatment on the semiconductor substrate subjected to the plasma cleaning process to remove the residual photoresist layer.
Optionally, in the method for removing a photoresist layer, a gas used in the plasma cleaning process is water vapor.
Optionally, in the method for removing a photoresist layer, the method for performing ashing treatment on the semiconductor substrate after performing the plasma cleaning process includes:
and ashing the photoresist layer by adopting a mixed gas of nitrogen and/or hydrogen and an auxiliary gas at the temperature of between 120 and 275 ℃.
Optionally, in the method for removing a photoresist layer, the auxiliary gas is oxygen and/or a fluorine-containing gas.
Optionally, in the method for removing the photoresist layer, the fluorine-containing gas is one or a combination of more of CHF3, CH3F, CH2F2, C2F6, C2F6, C3F8, C4F8, C5F8, C4F6, C6F6, C12F15 and C15F 18.
Optionally, in the method for removing a photoresist layer, when the semiconductor substrate subjected to the plasma cleaning process is subjected to ashing treatment, the flow rate of the nitrogen gas and/or the hydrogen gas is 300 seem to 6000 seem.
Optionally, in the method for removing a photoresist layer, when the semiconductor substrate subjected to the plasma cleaning process is subjected to ashing treatment, the pressure is 10Torr to 150Torr, the radio frequency power is 1000W to 5500W, and the ashing time is 30s to 60 s.
Optionally, in the method for removing the photoresist layer, the time for performing the plasma cleaning process on the semiconductor substrate is 60s to 200 s.
Optionally, in the method for removing a photoresist layer, the method for removing a photoresist layer further includes performing wet cleaning processing on the semiconductor substrate after ashing processing.
Based on the same inventive concept, the invention also provides a semiconductor device forming method, which comprises the following steps:
providing a semiconductor substrate, wherein a metal layer is formed on the semiconductor substrate;
forming a patterned photoresist layer on the metal layer;
etching the metal layer by taking the patterned photoresist layer as a mask to expose the semiconductor substrate; and the number of the first and second groups,
the patterned photoresist layer is removed by the photoresist layer removing method provided by the invention.
In the photoresist layer removing method and the semiconductor device forming method provided by the invention, the hard shell property on the surface of the photoresist layer can be changed by performing the plasma cleaning process on the semiconductor substrate, so that the hard shell on the surface of the photoresist layer can be softened, and the hard shell can be easily removed by the subsequent ashing treatment process; and then, ashing treatment is carried out on the semiconductor substrate after the plasma cleaning process is carried out, and the whole photoresist removing process can be effectively finished through the ashing treatment process, so that the problem of photoresist residue can be solved, the defects of the semiconductor device caused by the photoresist residue can be avoided, and the stability and yield of the semiconductor device can be further improved.
Drawings
FIG. 1 is a schematic flow chart of a method for removing a photoresist layer according to an embodiment of the present invention;
fig. 2 to fig. 5 are schematic structural diagrams formed in a method for forming a semiconductor device according to an embodiment of the present invention;
wherein the reference numerals are as follows:
100-a semiconductor substrate; 110-a metal layer; 120-patterned photoresist layer.
Detailed Description
The following describes the photoresist layer removing method and the semiconductor device forming method in more detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 1, a flow chart of a photoresist layer removing method according to an embodiment of the invention is shown. As shown in fig. 1, the present invention provides a method for removing a photoresist layer, comprising:
step S1: providing a semiconductor substrate, wherein a photoresist layer to be removed is formed on the semiconductor substrate;
step S2: performing a plasma cleaning process on the semiconductor substrate to clean the surface of the photoresist layer;
step S3: and performing ashing treatment on the semiconductor substrate subjected to the plasma cleaning process to remove the residual photoresist layer.
In step S1, providing a semiconductor substrate on which a photoresist layer to be removed is formed; here, the photoresist layer to be removed refers to the photoresist layer after performing the etching process. The material of the semiconductor substrate may be single crystal silicon (Si), single crystal germanium (Ge), or silicon germanium (GeSi), silicon carbide (SiC); or silicon-on-insulator (SOI), germanium-on-insulator (GOI); or other materials such as III-V compounds such as gallium arsenide; the semiconductor substrate can be provided with a metal layer, the photoresist layer is positioned on the metal layer and is used for a mask for subsequently performing an etching process on the metal layer, and the photoresist layer is made of organic matters, such as photosensitive resin, sensitizer and the like, as main components. In particular, during the etching of a metal layer, a large amount of by-products, such as halogen elements (e.g., chlorine) in the etching gas used during etching, are generated, and adhere to the surface of the photoresist layer, and a thick crust is formed, i.e., the surface of the photoresist layer is hardened, so that a hard crust is formed.
In step S2: and performing a plasma cleaning process on the semiconductor substrate to clean the surface of the photoresist layer. Specifically, the gas adopted by the plasma cleaning process is water vapor. So as to change the hard shell property of the surface of the photoresist layer, thereby softening the hard shell on the surface of the photoresist layer and enabling the hard shell to be easily removed through a subsequent ashing treatment process.
In performing a plasma cleaning process on the semiconductor substrate, the semiconductor substrate may be placed in a process chamber, a plasma gas may be formed in the process chamber, for example, by ionizing to generate a plasma gas containing water vapor to clean the surface of the photoresist layer, and the cleaning may be performed for a certain time to change the crust property of the surface of the photoresist layer, thereby softening the surface of the photoresist layer and further removing halogen elements (e.g., chlorine) from the surface of the photoresist layer. Preferably, the time for performing the plasma cleaning process on the semiconductor substrate is 60s to 200s, so that the hard shell on the surface of the photoresist layer is softened effectively. Specifically, the plasma gas can be sufficiently reacted with the crust on the surface of the photoresist layer, so that the crust on the surface of the photoresist layer can be softened, and the halogen element (such as chlorine) on the surface of the photoresist layer can be removed. Thereby, the processing time of the subsequent ashing process can be reduced.
In step S3, ashing process is performed on the semiconductor substrate after the plasma cleaning process is performed to remove the remaining photoresist layer. Specifically, the photoresist layer may be ashed by using a mixed gas of nitrogen and/or hydrogen and an auxiliary gas under a condition of 120 ℃ to 275 ℃, for example, 120 ℃, 150 ℃, 180 ℃, 200 ℃, 220 ℃, 250 ℃ and 275 ℃. In addition, when the nitrogen gas and the hydrogen gas are used as the ashing gas, the volume ratio of the nitrogen gas to the hydrogen gas may be 20:1, so that the ashing gas can sufficiently react with the photoresist layer, and thus the photoresist layer can be effectively removed.
In other embodiments of the present invention, the ashing process may be divided into two steps, specifically as follows:
the first step is as follows: ashing the surface of the photoresist layer by adopting a mixed gas of nitrogen and the auxiliary gas at the temperature of 120-250 ℃;
the second step is that: and ashing the residual photoresist layer by adopting a mixed gas of hydrogen and the auxiliary gas at the temperature of between 250 and 275 ℃. The photoresist layer is removed by adopting two-step ashing treatment, so that the photoresist layer residue can be better avoided, and the ashing residues in the ashing treatment can be reduced.
Preferably, the auxiliary gas may be oxygen and/or a fluorine-containing gas, and the fluorine-containing gas is one or a combination of several of CHF3, CH3F, CH2F2, C2F6, C2F6, C3F8, C4F8, C5F8, C4F6, C6F6, C12F15 and C15F 18. The nitrogen and the hydrogen can improve the efficiency of generating volatile substances by the photoresist, and the fluorine-containing gas can prevent the surface of the photoresist layer from forming crust again in the ashing process, namely, the surface hardening of the photoresist layer can be avoided. Wherein the flow rate of the oxygen can be 400sccm to 6000 sccm.
Furthermore, when the semiconductor substrate after the plasma cleaning process is carried out is subjected to the ashing treatment, the pressure is 10 Torr-150 Torr, the radio frequency power is 1000W-5500W, and the ashing treatment time is 30 s-60 s, so that the photoresist layer is thoroughly removed, the photoresist layer residue is avoided, the defects of the semiconductor device caused by the photoresist residue are avoided, and the stability and the yield of the semiconductor device can be further improved. Wherein the pressure refers to the pressure in the reaction chamber during the ashing process.
Next, the semiconductor substrate is subjected to a wet cleaning process to clean contaminants on the semiconductor substrate during the removal of the photoresist layer, i.e., to remove contaminants on the semiconductor substrate, such as gaseous reactants or byproducts generated during the removal of the photoresist layer.
Referring to fig. 2 to 5, fig. 2 to 5 are schematic structural diagrams formed in a method for forming a semiconductor device according to an embodiment of the present invention. As shown in fig. 2, based on the same inventive concept, the present invention also provides a semiconductor device forming method, including:
providing a semiconductor substrate 100, wherein a metal layer 110 is formed on the semiconductor substrate 100;
as shown in fig. 3, a patterned photoresist layer 120 is formed on the metal layer 110;
as shown in fig. 4, the metal layer 110 is etched by using the patterned photoresist layer as a mask to expose the semiconductor substrate 100; the metal layer 110 may be etched by a dry etching process, and the gas used for the dry etching may be, for example, chlorine, but is not limited thereto.
As shown in fig. 5, the patterned photoresist layer is removed by the photoresist layer removing method provided by the present invention. After removing the patterned photoresist layer 120, a portion of the metal layer 110 is exposed. The material of the metal layer 110 may be one or a combination of hafnium, lanthanum, zirconium, tantalum, titanium, copper, and aluminum, and in this embodiment, aluminum is preferably used, so that the metal layer 110 has good electrical conductivity.
In summary, in the method for removing a photoresist layer and the method for forming a semiconductor device provided by the present invention, by performing a plasma cleaning process on the semiconductor substrate, the properties of the crust on the surface of the photoresist layer can be changed, so that the crust on the surface of the photoresist layer can be softened and easily removed by a subsequent ashing process; and then, ashing treatment is carried out on the semiconductor substrate after the plasma cleaning process is carried out, and the whole photoresist removing process can be effectively finished through the ashing treatment process, so that the problem of photoresist residue can be solved, the defects of the semiconductor device caused by the photoresist residue can be avoided, and the stability and yield of the semiconductor device can be further improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method for removing a photoresist layer, comprising:
providing a semiconductor substrate, wherein a photoresist layer to be removed is formed on the semiconductor substrate;
performing a plasma cleaning process on the semiconductor substrate to clean the surface of the photoresist layer;
and performing ashing treatment on the semiconductor substrate subjected to the plasma cleaning process to remove the residual photoresist layer.
2. The method of claim 1, wherein the gas used in the plasma cleaning process is water vapor.
3. The method of removing the photoresist layer according to claim 1, wherein the method of performing ashing treatment on the semiconductor substrate after performing the plasma cleaning process comprises:
and ashing the photoresist layer by adopting a mixed gas of nitrogen and/or hydrogen and an auxiliary gas at the temperature of between 120 and 275 ℃.
4. The method of removing a photoresist layer of claim 3 wherein the assist gas is oxygen and/or a fluorine-containing gas.
5. The method of removing a photoresist layer of claim 4 wherein the fluorine-containing gas is one or a combination of more of CHF3, CH3F, CH2F2, C2F6, C2F6, C3F8, C4F8, C5F8, C4F6, C6F6, C12F15 and C15F 18.
6. The method for removing the photoresist layer according to claim 3, wherein a flow rate of the nitrogen gas and/or the hydrogen gas is 300sccm to 6000sccm when the ashing process is performed on the semiconductor substrate after the plasma cleaning process is performed.
7. The method for removing a photoresist layer according to claim 1, wherein a pressure of 10to 150Torr, a radio frequency power of 1000 to 5500W, and an ashing time of 30 to 60s are used in ashing the semiconductor substrate after performing the plasma cleaning process.
8. The method of claim 1, wherein the semiconductor substrate is subjected to the plasma cleaning process for a time period of 60s to 200 s.
9. The method of removing a photoresist layer of claim 1 further comprising performing a wet cleaning process on the semiconductor substrate after the ashing process.
10. A semiconductor device forming method, characterized by comprising:
providing a semiconductor substrate, wherein a metal layer is formed on the semiconductor substrate;
forming a patterned photoresist layer on the metal layer;
etching the metal layer by taking the patterned photoresist layer as a mask to expose the semiconductor substrate; and the number of the first and second groups,
removing the patterned photoresist layer by the photoresist layer removal method of any one of claims 1 to 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114815532A (en) * | 2022-04-19 | 2022-07-29 | 度亘激光技术（苏州）有限公司 | Photoresist removing method and semiconductor device manufacturing method |
| JP2023539380A (en) * | 2020-10-30 | 2023-09-13 | 江蘇魯▲もん▼儀器股▲ふん▼有限公司 | How to remove photoresist |
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| KR100794514B1 (en) * | 2006-07-31 | 2008-01-16 | 피에스케이 주식회사 | Method for ashing substrates |
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| CN104157566A (en) * | 2014-08-20 | 2014-11-19 | 上海华力微电子有限公司 | Gradient type dry photoresist removing method |
| CN104882408A (en) * | 2015-05-20 | 2015-09-02 | 中国航天科技集团公司第九研究院第七七一研究所 | Through hole etching method for reducing hole-chain resistance between multilayer metals of integrated circuit |
| CN105824202A (en) * | 2016-05-11 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | Photoresist removal method and semiconductor device manufacturing method |
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| US6214739B1 (en) * | 1999-02-05 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method of metal etching with in-situ plasma cleaning |
| KR100794514B1 (en) * | 2006-07-31 | 2008-01-16 | 피에스케이 주식회사 | Method for ashing substrates |
| CN101458463A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Ashing method |
| CN104157566A (en) * | 2014-08-20 | 2014-11-19 | 上海华力微电子有限公司 | Gradient type dry photoresist removing method |
| CN104882408A (en) * | 2015-05-20 | 2015-09-02 | 中国航天科技集团公司第九研究院第七七一研究所 | Through hole etching method for reducing hole-chain resistance between multilayer metals of integrated circuit |
| CN105824202A (en) * | 2016-05-11 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | Photoresist removal method and semiconductor device manufacturing method |
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| JP2023539380A (en) * | 2020-10-30 | 2023-09-13 | 江蘇魯▲もん▼儀器股▲ふん▼有限公司 | How to remove photoresist |
| JP7472400B2 (en) | 2020-10-30 | 2024-04-22 | 江蘇魯▲もん▼儀器股▲ふん▼有限公司 | Photoresist stripping method |
| CN114815532A (en) * | 2022-04-19 | 2022-07-29 | 度亘激光技术（苏州）有限公司 | Photoresist removing method and semiconductor device manufacturing method |
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