CN112086368A - 一种快速开关塑封高压硅堆的制备工艺 - Google Patents
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Abstract
本发明公开了一种快速开关塑封高压硅堆的制备工艺,该快速开关塑封高压硅堆的制备工艺包括以下几个步骤:选取若干个的硅高频二极管的管心,分向二极管管心预焊盘装填,把正极朝上的分向二极管管心放入预焊用石墨焊接板,使其在预焊用石墨焊接板孔内全部负极朝上,焊片预焊盘装填,负极朝上的整流二极管管心上面再装填一层焊片;选用N‑型单晶硅片,采用纯水清洗,硅片清洗后甩干,该快速开关塑封高压硅堆的制备工艺,该高压硅堆在加工时,分别采用不同的工艺流程对其零件进行处理,能够使得高压硅堆的高频耐压得到显著提升,且该高压硅堆体积小、重量轻、机械强度高、使用简便和无辐射,使得工作电压达到10‑12万伏之间,具有优异的性能。
Description
技术领域
本发明属于高压桥堆技术领域,特别涉及一种快速开关塑封高压硅堆的制备工艺。
背景技术
高压硅堆又叫硅柱。它是一种硅高频高压整流二极管。工作电压在几千伏至几万伏之间。常用于黑白电视机或其他电子仪器中作高频高压整流。它之所以能有如此高的耐压本领,是因为它的内部是由若干个硅高频二极管的管心串联起来组合而成的。外面用高频陶瓷进行封装,普遍用于直流高压设备中作为基本的整流元件。实际上一个硅堆常由数个至数十个硅整流二极管串联封装而成;
高压硅堆产品在加工时存在一定的问题;为此,我们提出一种快速开关塑封高压硅堆的制备工艺。
发明内容
本发明的主要目的在于提供一种快速开关塑封高压硅堆的制备工艺,可以有效解决背景技术中的问题。
为实现上述目的,本发明采取的技术方案为:
一种快速开关塑封高压硅堆的制备工艺,该快速开关塑封高压硅堆的制备工艺包括以下几个步骤:
步骤一、选取若干个的硅高频二极管的管心,分向二极管管心预焊盘装填,把正极朝上的分向二极管管心放入预焊用石墨焊接板,使其在预焊用石墨焊接板孔内全部负极朝上,焊片预焊盘装填,负极朝上的整流二极管管心上面再装填一层焊片;
步骤二、选用N-型单晶硅片,采用纯水清洗,硅片清洗后甩干,在140℃的氮气箱内干燥处理,干燥处理时长为20-30min,接着进行扩散构成PN结;
步骤三、将步骤一中经过处理的整流二极管管心进行光刻,置于-6-1℃的腐蚀液中,腐蚀时间为20-30min,槽深125-140μm,控制腐蚀速率使得构成台面负斜角40°-75°;
步骤四、将硅高频二极管的管心固定在导电层上,在硅高频二极管的管心和高频陶瓷板之间填充绝缘包封材料,控制高频陶瓷板的高度略低于硅高频二极管的管心,露出硅高频二极管的管心的顶部电极和高频陶瓷板的顶部;
步骤五、对上述加工完成的高频二极管的管心的顶部电极和高频陶瓷板边角残料进行切割,对管芯进行清洗后,在N+层和P+层表面形成的欧姆接触层上焊接引线,涂覆保护层,塑封成型,最终制得快速开关塑封高压硅堆。
优选的,纯水的电阻率小于10MΩ.CM。
优选的,氮气的浓度维持在0.0348-0.04mol/L。
优选的,绝缘包封材料选用一种绝缘树脂粉末。
优选的,所述保护层采用环氧树脂复合材料涂料。
优选的,所述高压硅整流二极管UF约为0.4-0.6V。
与现有技术相比,本发明具有如下有益效果:该快速开关塑封高压硅堆的制备工艺,该高压硅堆在加工时,分别采用不同的工艺流程对其零件进行处理,能够使得高压硅堆的高频耐压得到显著提升,且该高压硅堆体积小、重量轻、机械强度高、使用简便和无辐射,使得工作电压达到10-12万伏之间,具有优异的性能。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体实施方式,进一步阐述本发明。
该高压硅堆在加工时,选取若干个的硅高频二极管的管心,分向二极管管心预焊盘装填,把正极朝上的分向二极管管心放入预焊用石墨焊接板,使其在预焊用石墨焊接板孔内全部负极朝上,焊片预焊盘装填,负极朝上的整流二极管管心上面再装填一层焊片;选用N-型单晶硅片,采用纯水清洗,硅片清洗后甩干,在140℃的氮气箱内干燥处理,干燥处理时长为20-30min,接着进行扩散构成PN结;将经过处理的整流二极管管心进行光刻,置于-6-1℃的腐蚀液中,腐蚀时间为20-30min,槽深125-140μm,控制腐蚀速率使得构成台面负斜角40°-75°;将硅高频二极管的管心固定在导电层上,在硅高频二极管的管心和高频陶瓷板之间填充绝缘包封材料,控制高频陶瓷板的高度略低于硅高频二极管的管心,露出硅高频二极管的管心的顶部电极和高频陶瓷板的顶部;对上述加工完成的高频二极管的管心的顶部电极和高频陶瓷板边角残料进行切割,对管芯进行清洗后,在N+层和P+层表面形成的欧姆接触层上焊接引线,涂覆保护层,塑封成型,最终制得快速开关塑封高压硅堆;
纯水的电阻率小于10MΩ.CM,氮气的浓度维持在0.0348-0.04mol/L,绝缘包封材料选用一种绝缘树脂粉末,所述保护层采用环氧树脂复合材料涂料,所述高压硅整流二极管UF约为0.4-0.6V;
该快速开关塑封高压硅堆的制备工艺,该高压硅堆在加工时,分别采用不同的工艺流程对其零件进行处理,能够使得高压硅堆的高频耐压得到显著提升,且该高压硅堆体积小、重量轻、机械强度高、使用简便和无辐射,使得工作电压达到10-12万伏之间,具有优异的性能。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点,本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (6)
1.一种快速开关塑封高压硅堆的制备工艺,其特征在于,该快速开关塑封高压硅堆的制备工艺包括以下几个步骤:
步骤一、选取若干个的硅高频二极管的管心,分向二极管管心预焊盘装填,把正极朝上的分向二极管管心放入预焊用石墨焊接板,使其在预焊用石墨焊接板孔内全部负极朝上,焊片预焊盘装填,负极朝上的整流二极管管心上面再装填一层焊片;
步骤二、选用N-型单晶硅片,采用纯水清洗,硅片清洗后甩干,在140℃的氮气箱内干燥处理,干燥处理时长为20-30min,接着进行扩散构成PN结;
步骤三、将步骤一中经过处理的整流二极管管心进行光刻,置于-6-1℃的腐蚀液中,腐蚀时间为20-30min,槽深125-140μm,控制腐蚀速率使得构成台面负斜角40°-75°;
步骤四、将硅高频二极管的管心固定在导电层上,在硅高频二极管的管心和高频陶瓷板之间填充绝缘包封材料,控制高频陶瓷板的高度略低于硅高频二极管的管心,露出硅高频二极管的管心的顶部电极和高频陶瓷板的顶部;
步骤五、对上述加工完成的高频二极管的管心的顶部电极和高频陶瓷板边角残料进行切割,对管芯进行清洗后,在N+层和P+层表面形成的欧姆接触层上焊接引线,涂覆保护层,塑封成型,最终制得快速开关塑封高压硅堆。
2.根据权利要求1所述的一种快速开关塑封高压硅堆的制备工艺,其特征在于:纯水的电阻率小于10MΩ.CM。
3.根据权利要求1所述的一种快速开关塑封高压硅堆的制备工艺,其特征在于:氮气的浓度维持在0.0348-0.04mol/L。
4.根据权利要求1所述的一种快速开关塑封高压硅堆的制备工艺,其特征在于:绝缘包封材料选用一种绝缘树脂粉末。
5.根据权利要求1所述的一种快速开关塑封高压硅堆的制备工艺,其特征在于:所述保护层采用环氧树脂复合材料涂料。
6.根据权利要求1所述的一种快速开关塑封高压硅堆的制备工艺,其特征在于:所述高压硅整流二极管UF约为0.4-0.6V。
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