CN1120733A - 对配有切割带作为衬底载体的锯切架的使用 - Google Patents

对配有切割带作为衬底载体的锯切架的使用 Download PDF

Info

Publication number
CN1120733A
CN1120733A CN94109329A CN94109329A CN1120733A CN 1120733 A CN1120733 A CN 1120733A CN 94109329 A CN94109329 A CN 94109329A CN 94109329 A CN94109329 A CN 94109329A CN 1120733 A CN1120733 A CN 1120733A
Authority
CN
China
Prior art keywords
cutting belt
accelerometer
digital micromirror
continuation
adhesive surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN94109329A
Other languages
English (en)
Other versions
CN1047669C (zh
Inventor
米凯尔·A·米尼亚尔第
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN1120733A publication Critical patent/CN1120733A/zh
Application granted granted Critical
Publication of CN1047669C publication Critical patent/CN1047669C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/004—Testing during manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/49794—Dividing on common outline

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种对包含有微电子机械器件的大圆片进行加工的方法，它可以大圆片形式而非器件形式来完成所有的制造和测试步骤。在完成器件制造之前，先将大圆片20安装在锯切架24中的切割带22上，并且通常借助锯片将各单个器件27进行分离，在剩下的制造步骤期间诸器件均保留在切割带上。有些制造步骤可能要求用保护盖44来覆盖切割带的粘合物。在包括施加保护涂层和功能测试在内的所有制造步骤完成之后，从切割带上卸下器件并进行封装。

Description

对配有切割带作为衬底载体的锯切架的使用
本发明涉及集成电路工艺领域，尤其涉及包括可变形微镜器件在内的微电子机械器件的制造。
为使集成电路(IC)的加工成本低廉，一般使用半导体大圆片在单个衬底上同时制作许多器件来大量生产各个电路或器件。典型的集成电路生产流程步骤依次为器件制造、器件测试、器件分离和器件封装。从大圆片上分离器件时，会产生由大圆晶片微粒和灰尘所组成的切割碎屑。在键合器件至管壳之前把该切割碎屑由集成电路表面清洗掉。
微电子机械系统(MEMS)，或微机械器件通常带有过于脆弱易碎的结构，以致不能经受一些例如器件分离和清洗一类的标准IC制造步骤。有些MEMS例如数字微镜器件(DMD)和一些加速度计的脆弱易碎的特性，要求重新制订标准IC的工艺步骤以免损坏所制得的器件。DMD说明见美国专利第5,061,049“空间光调制器及方法”，该专利已转让给德克萨斯仪器股份有限公司。加速度计的描述见美国专利第07/883,616“数字加速度计”，该专利亦已被转让给德克萨斯仪器股份有限公司。正如上述专利所述那样，这些MEM具有悬浮于硅衬底表面上所形成电极上方气隙中的十分小的结构，这些结构一旦形成并将牺牲材料由该气隙中加以腐蚀掉后，器件便十分脆弱易碎。器件不能暴露在诸液体中，诸如在大圆片清洗步骤中将会出现的那样，以免反射镜有遭受损坏的危险。因此，必须在从反射镜下方腐蚀掉牺牲材料之前切割器件并洗去切割碎屑。
在器件完成前进行大圆片的分离导致在剩下的器件制造步骤例如无钝化和器件测试期间大量的器件处理。以大圆片形式而非器件形式完成这些工艺加工，大大减少了必需的处理量，这是因为加工设备仅需对一个大圆片而非许多个器件进行移动和对准。对于芯片测试而言，对精确对准的要求是极为苛刻的。
本发明揭示一种方法，在该方法中可以采用大圆片加工技术来完成整个的器件制造及测试工艺。
一种制造微电子机械或集成电路器件的方法，其中，将一部分已完工器件的大圆片安装在锯切架的切割带上，随后通过锯切大圆片或其它的大圆片分离技术对器件进行分离。在将器件从切割带上卸下之前完成器件的制造。有些应有中宜用一保护盖对切割带被暴露的粘性物加以覆盖。该方法的优点在于可使用效率高的工业标准大圆片处理技术来全部完成器件的工艺加工。
图1是数字微镜器件的一个元件的透视图；
图1A是沿图1A-A线所得图1器件的示意图，它示出了组成该器件的诸元件；
图1B是沿图1A-A线所得图1器件的截面图，它示出反射镜梁的旋转；
图2是一排数字加速度计的顶视图；
图2A是沿图2的A-A线所得图2器件的截面图，它示出组成该器件的诸元件；
图3是固定安装在固定于锯切架中切割带上一硅大圆片的顶视图；
图3A是沿图3的A-A线所得图3中硅大圆片的截面图；
图4是安装在固定于离心机内锯切架中一已锯切大圆片的顶视图；
图4A是沿用4A-A线所得图4大圆片的截面图；
图5是固定在喷射显影罩中一大圆片和锯切架的侧视示意图；
图6是安装在锯切架中、并在所暴露切割带上带有保护盖的一已锯切大圆片的顶视图；
图6A是沿图6的A-A线所得图6中已锯切大圆片保护盖的截面图；
图7是经改进用来接纳锯切架的等离子反应器基座板的顶视图；
图8是正进行电学测试的一已完工器件大圆片截面视图。
所揭示的方法及保护盖适用于以大圆片形式进行生产的任何器件的制造，尤其适用于具有脆弱易碎结构的微电子机械器件，后者不能使用现有的大圆片制造工艺流程。为了说明起见，本发明将使用数字微镜器件及加速度计的生产实例加以讲解。特定的实例仅用来说明本发明的一种可能的实施方法而并不旨在将本发明限止于DMD或加速度计的生产。可用所揭示的方法来制造任何型式的集成电路或微电子机械器件。
一典型DMD器件的结构示于图1至图1B。正如包括在本文所有附图中的那样，所示的元件并不按比例尺寸画出。大多数情况下为了进行说明对大圆片及器件层的厚度大大加以夸张。DMD一般由一排元件50组成。每一DMD元件50通常包含一金属梁52，它借助两个扭转铰链54悬挂在硅衬底56的上方，在硅衬底56上生长一绝缘的氧化层58，并在氧化层58上沉积地址和着陆电极60、62、64和66。将一平面间隔层68施加于衬底，它有时称为牺牲层，随后在此间隔层68上依次淀积一层铰链金属70和一层梁金属72。对金属层进行蚀刻从而制造出每一元件50的铰链54和梁52。
DMD制造的典型工艺流程要求在底面切割反射镜之前，先将器件分离，这通常借助锯切大圆片上纵横排列的器件间距来实现。器件被分离后，将梁52和铰链54下面的间隔层68腐蚀去掉以允许该梁如图1B所示那样在铰链上扭转。底面切割操作通常在等离子反应器中进行，通孔74和间隙76允许等离子将位于梁52和铰链54下方的间隔垫材料68腐蚀去掉。当间隔层68被腐蚀去掉之后，通过称为钝化的工艺将器件作成具有较小的化学活性。
采用相似的工艺流程来制造某些加速度计。图2示出一排悬臂梁加速度计78。每一加速度计包含一称作验证质量80的精确质量，它由一附着于梁84的铰链支撑着。在每一加速度计的下面为一接触头86，它被沉积在上面覆盖有绝缘氧化层90的硅衬底片88上，一平面间隔层92使梁84与电极86相分隔。在把位于验证质量80和铰链82下方的间隔层腐蚀去之后，一足够大的加速力可引起验证质量80发生偏斜并触及接触头86。
如上文所述，一旦间隔层68或92被腐蚀去掉后，器件就变得非常脆弱易碎，不能暴露于例如在大圆片清洗步骤期间所用的诸种液体之中，否则将损坏器件。由于已完工的器件不能进行清洗，故通常在蚀去间隔层之前先将器件锯切分开。锯切分开后，在进行底面切割、芯片测试和保护涂敷诸步骤期间再对各个器件分别处理。
本发明可在整个制造工艺中共同处理来自一个大圆片的所有器件。按照示于图3的所揭示发明的一种实施例，将一含有部分已完工微电子机械器件的硅大圆片20安装在固定于锯切架24中的切割带22的粘合面21上。图3A是位于锯切架24中切割带22上的该大圆片20的截面图。
大圆片20一般为硅晶片，但也可由其它材料，例如石英或砷化镓制成。在将大圆片装进锯切架前可将一临时性保护涂层敷在大圆片20的表面以防锯切操作期间损坏大圆片。锯切架必须安装得允许将器件锯切分开。一般情况下锯子完全切透大圆片并切入切割带。然而，并不切透切割带。例如，切割带可能为4密耳，而切入仅1密耳。
晶片被锯切分开后，将锯切操作中产生的微粒从大圆片切割带上和锯切架上清除掉，这一般通过冲洗来完成。在大圆片上已施加有临时性保护涂层，则可将锯切架安装在离心机中，并喷射溶剂于大圆片上以去除该保护涂层。图4和4A表示安装在离心机28中的已锯切片26和锯切架24。图4中所示器件27的大小和取向仅用作说明。为清楚起见，图4A中并未示出单个器件。当装进离心机时，将一溶剂喷向大圆片表面以去除保护涂层。离心机使溶剂和被溶解的涂层旋转而脱离大圆片。
代替在离心机中除去临时性保护涂层的另一种方法是把锯切架装进一喷射显影罩。图5示出安装在喷射显影罩30中的大圆片26和锯切架24。在喷射显影洗罩期间，溶剂32从喷嘴34喷射至已锯切大圆片26的表面。溶剂气体36通过罩背面的排气孔38排出。溶剂和微粒40则通过位于罩底部的排水口42流至罩外。
从大圆片上除去保护涂层后，必须把间隔层68或92部分去除，以留下反射镜或加速度计的支承梁。这种底面切割操作通常在等离子反应器中进行。为避免将切割带22上的粘合物21暴露在等离子体中，可把一保护盖置于切割带22中所暴露的粘合物21上。图6和6A表示安装在锯切架24中的已锯切大圆片26，其中，切割带22所暴露的粘合物21上覆盖有保护盖44。为清楚起见，图6A中并未示出各单个器件。保护盖44可由能够经受得住暴露于等离子反应器的任何材料制成。例如，覆盖物可以是一陶瓷环或依附在切割带上的环形物。另一种替代方法是，使用另一片切割成适宜形式的切割带，并以此对它进行安装，使被用作保护盖44的切割带粘合面和用作切割带22的粘合面合并放在一起。保护盖也可以是石英或金属，或能经受得住等离子腐蚀环境的任何其它材料。可将带有锯切大圆片和依附有保护盖的锯切架放置在一基座板上，后者设计成用来固定锯切架，而反射镜或加速度计则借助等离子腐蚀工艺进行底面切割。图7示出一带有凹壁区域48的基座板46，后者设计成在等离子腐蚀工艺期间用以固定锯切架24。
底面切割操作后，可对器件进行钝化，并进行电学和光学测试，而此时这些器件仍然依附在锯切架上。由于大圆片基本上仍是完整的使测试大大简化，这是因为各单个器件27应仍是相互对准在一起的。所以，如图8所示，通过将多探针探卡48一次性地与已锯切大圆片对准，可精确地排齐或对准每一器件27。如果器件在切割带上有某些移动，则可用一视觉辅助型多探针来个别地对齐每一器件。
对器件进行测试后，可将锯切器和大圆片安装在一捡取——并——放置的机器上，以便从切割带上卸下器件并将它们放置在导架上进行封装装配工艺。本发明所述经改进工艺流程的器件拆卸工艺应与标准集成电路器件的拆卸工艺相同。故应无需对器件拆卸和封装装配工艺进行改进。
这样，尽管这里描述了一种微电子机械器件制造方法的特定实施例，其中在完成器制造之前将器件从大圆片上进行分离，但并不意味着这样一些特定的论述被认为是对本发明范围的限制，唯下文权利要求所提出的内容则是例外。另外通过将本发明结合其某一特定实施例进行描述后，那些对本领域熟悉的技术人员应理解作进一步的修改建议亦是可以行的，所有这样的修改都应包括在所附权项要求的范围内。

Claims (20)

1.一种制造微电子机械器件的方法，其特征在于，包括以下步骤：
提供一种带有粘合面的切割带；
在所述切割带的粘合面上安装大园片，所述大园片包含有部分制成的器件；
分割所述大园片以分离所述已部分制成的器件，所述已分离的器件保持安装在所述的切割带上；
继续对所述已分离的器件进行制造；以及将所述器件从所述切割带上卸下。
2.如权利要求1所述的方法，其特征在于，还包括以下步骤，在所述切割带粘合面的暴露部分上放置一保护盖。
3.如权利要求2所述的方法，其特征在于，所述保护盖可选自包括陶瓷、金属、石英和切割带所组成的材料组中的任一种。
4.如权利要求1所述的方法，其特征在于，还包括在所述分割步骤之前先在所述器件上涂敷一临时保护涂层。
5.如权利要求4所述的方法，其特征在于，还包括从所述器件上除去所述临时性保护涂层的步骤。
6.如权利要求1所述的方法，其特征在于，所述器件为数字微镜器件(DMD)。
7.如权利要求1所述的方法，其特征在于，所述器件为加速度计。
8.如权利要求1所述的方法，其特征在于，所述继续的制造步骤包括等离子腐蚀所述器件。
9.如权利要求1所述的方法，其特征在于，所述继续的制造步骤包括钝化所述器件。
10.如权利要求1所述的方法，其特征在于，所述继续的制造步骤包括测试所述器件。
11.一种制造数字微镜器件的方法，其特征在于，包括以下步骤：
提供一种带有粘合面的切割带；
在所述切割带的所述粘合面上安装大园片，所述大园片包含有已部分制成的数字微镜器件；
分割所述大园片以分离所述已部分制成的数字微镜器件；所述已分离的数字微镜器件保持安装在所述的切割带上；
将保护盖放置在所述切割带粘合面的暴露部分，所述保护盖选自包括陶瓷、金属、石英和切割带所组成材料组中的任一种；
继续对所述已分离的数字微镜器件进行制造；以及
从所述切割带上卸下所述数字微镜器件。
12.如权利要求11所述的方法，其特征在于，所述继续的制造步骤包括等离子腐蚀所述数字微镜器件。
13.如权利要求11所述的方法，其特征在于，所述继续的制造步骤包括钝化所述数字微镜器件。
14.如权利要求11所述的方法，其特征在于，所述继续的制造步骤包括测试所述数字微镜器件。
15.如权利要求11所述的方法，其特征在于，还包括在所述的分割步骤之前将一临时性保护涂层涂敷在所述数字微镜器件上。
16.如权利要求15所述的方法，其特征在于，还包括从所述数字微镜器件上除去所述临时性保护涂层。
17.一种制造加速度计的方法，其特征在于，包括以下步骤：
提供一种带有粘合面的切割带；
在所述切割带的粘合面上安装上大园片，所述大园片带有已部分制成的加速度计；
分割所述的大园片以分离所述已部分制成的加速度计，所述已分离的加速计保持安装在所述的切割带上；
在所述切割带粘合面的暴露部分放置保护盖，它选自包括陶瓷、金属、石英和切割带所组成的材料组中的任一种；
继续对所述已分离的加速度计进行制造；以及
从所述切割带上卸去所述加速度计。
18.如权利要求17所述的方法，其特征在于，所述继续的制造步骤包括等离子腐蚀所述加速度计。
19.如权利要求17所述的方法，其特征在于，所述继续的制造步骤包括钝化所述加速度计。
20.如权利要求17所述的方法，其特征在于，所述继续的制造步骤包括测试所述加速度计。
CN94109329A 1993-08-02 1994-08-02 微电子机械器件的制造方法 Expired - Fee Related CN1047669C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/101,122 US5389182A (en) 1993-08-02 1993-08-02 Use of a saw frame with tape as a substrate carrier for wafer level backend processing
US08/101,121 1993-08-02

Publications (2)

Publication Number Publication Date
CN1120733A true CN1120733A (zh) 1996-04-17
CN1047669C CN1047669C (zh) 1999-12-22

Family

ID=22283142

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94109329A Expired - Fee Related CN1047669C (zh) 1993-08-02 1994-08-02 微电子机械器件的制造方法

Country Status (6)

Country Link
US (1) US5389182A (zh)
EP (1) EP0655781A3 (zh)
KR (1) KR950007010A (zh)
CN (1) CN1047669C (zh)
CA (1) CA2129212A1 (zh)
TW (1) TW246736B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104787718A (zh) * 2015-01-15 2015-07-22 深圳市盛喜路科技有限公司 一种mems器件的分离方法
CN106068548A (zh) * 2014-03-07 2016-11-02 等离子瑟姆有限公司 用于对半导体晶圆进行等离子体切片的方法和设备
CN109940222A (zh) * 2019-04-03 2019-06-28 邯郸中威机械有限公司 一种可调式锯切热轧不锈钢的冲屑装置

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219015B1 (en) 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
CA2101293C (en) * 1992-08-05 2004-06-29 David A. Nicholas Articulating endoscopic surgical apparatus
US5841579A (en) 1995-06-07 1998-11-24 Silicon Light Machines Flat diffraction grating light valve
US5872046A (en) * 1996-04-10 1999-02-16 Texas Instruments Incorporated Method of cleaning wafer after partial saw
US6686291B1 (en) 1996-05-24 2004-02-03 Texas Instruments Incorporated Undercut process with isotropic plasma etching at package level
JPH1027971A (ja) * 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
US5982553A (en) 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
US5817569A (en) * 1997-05-08 1998-10-06 Texas Instruments Incorporated Method of reducing wafer particles after partial saw
EP2015359B1 (en) * 1997-05-09 2015-12-23 Citizen Holdings Co., Ltd. Process for manufacturing a semiconductor package and circuit board substrate
US5987725A (en) * 1997-08-26 1999-11-23 International Business Machines Corporation Method for parting a slider from a slider row
US6088102A (en) 1997-10-31 2000-07-11 Silicon Light Machines Display apparatus including grating light-valve array and interferometric optical system
US6271808B1 (en) 1998-06-05 2001-08-07 Silicon Light Machines Stereo head mounted display using a single display device
US6130770A (en) 1998-06-23 2000-10-10 Silicon Light Machines Electron gun activated grating light valve
US6101036A (en) 1998-06-23 2000-08-08 Silicon Light Machines Embossed diffraction grating alone and in combination with changeable image display
US6215579B1 (en) 1998-06-24 2001-04-10 Silicon Light Machines Method and apparatus for modulating an incident light beam for forming a two-dimensional image
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6529310B1 (en) * 1998-09-24 2003-03-04 Reflectivity, Inc. Deflectable spatial light modulator having superimposed hinge and deflectable element
US6153536A (en) * 1999-03-04 2000-11-28 International Business Machines Corporation Method for mounting wafer frame at back side grinding (BSG) tool
WO2001014248A2 (en) * 1999-08-24 2001-03-01 Knowles Electronics, Llc Assembly process for delicate silicon structures
US6387778B1 (en) 2000-02-11 2002-05-14 Seagate Technology Llc Breakable tethers for microelectromechanical system devices utilizing reactive ion etching lag
US6420206B1 (en) * 2001-01-30 2002-07-16 Axsun Technologies, Inc. Optical membrane singulation process utilizing backside and frontside protective coating during die saw
US6707591B2 (en) 2001-04-10 2004-03-16 Silicon Light Machines Angled illumination for a single order light modulator based projection system
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6785001B2 (en) * 2001-08-21 2004-08-31 Silicon Light Machines, Inc. Method and apparatus for measuring wavelength jitter of light signal
US20090065429A9 (en) * 2001-10-22 2009-03-12 Dickensheets David L Stiffened surface micromachined structures and process for fabricating the same
DE10163506A1 (de) * 2001-12-21 2003-07-10 Infineon Technologies Ag Verfahren und Vorrichtung zur Herstellung eines Bauelements mit einer beweglichen Struktur
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US6714337B1 (en) 2002-06-28 2004-03-30 Silicon Light Machines Method and device for modulating a light beam and having an improved gamma response
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US7057795B2 (en) * 2002-08-20 2006-06-06 Silicon Light Machines Corporation Micro-structures with individually addressable ribbon pairs
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
DE10308860B4 (de) * 2003-02-27 2007-09-06 X-Fab Semiconductor Foundries Ag Verfahren zum Vereinzeln von Halbleiterscheiben mit frei liegenden mikromechanischen Strukturen zu Chips
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
JP2004288761A (ja) * 2003-03-20 2004-10-14 Renesas Technology Corp 半導体素子のテスト方法
AU2003901914A0 (en) * 2003-04-22 2003-05-08 Quantum Precision Instruments Pty Ltd Quantum tunnelling transducer device
US7169691B2 (en) * 2004-01-29 2007-01-30 Micron Technology, Inc. Method of fabricating wafer-level packaging with sidewall passivation and related apparatus
US7210987B2 (en) * 2004-03-30 2007-05-01 Intel Corporation Wafer grinding method
GB0605576D0 (en) * 2006-03-20 2006-04-26 Oligon Ltd MEMS device
JP4858395B2 (ja) 2007-10-12 2012-01-18 パナソニック株式会社 プラズマ処理装置
US8485511B2 (en) 2009-03-11 2013-07-16 Centipede Systems, Inc. Method and apparatus for holding microelectronic devices
US9343365B2 (en) * 2011-03-14 2016-05-17 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9082839B2 (en) * 2011-03-14 2015-07-14 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8815706B2 (en) 2012-01-20 2014-08-26 Infineon Technologies Ag Methods of forming semiconductor devices
US9651473B2 (en) 2013-03-26 2017-05-16 MCube Inc. Wafer level centrifuge for MEMS stiction detection and screening system and method
US9758374B2 (en) * 2013-05-06 2017-09-12 MCube Inc. Centrifuge MEMS stiction detection and screening system and method
JP5962921B2 (ja) * 2013-05-09 2016-08-03 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US10317333B2 (en) 2013-05-30 2019-06-11 MCube Inc. Centrifuge MEMS stiction test system and method
JP6083529B2 (ja) * 2013-09-02 2017-02-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US9346671B2 (en) * 2014-02-04 2016-05-24 Freescale Semiconductor, Inc. Shielding MEMS structures during wafer dicing
JP6683500B2 (ja) * 2016-02-24 2020-04-22 株式会社ディスコ 検査装置及びレーザー加工装置
JP6899252B2 (ja) * 2017-05-10 2021-07-07 株式会社ディスコ 加工方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562057A (en) * 1967-05-16 1971-02-09 Texas Instruments Inc Method for separating substrates
US4203127A (en) * 1977-07-18 1980-05-13 Motorola, Inc. Package and method of packaging semiconductor wafers
JPS54126473A (en) * 1978-03-24 1979-10-01 Nec Home Electronics Ltd Production of semiconductor element
JPS5946429B2 (ja) * 1978-12-22 1984-11-12 株式会社東芝 発光表示装置の製造方法
US4296542A (en) * 1980-07-11 1981-10-27 Presco, Inc. Control of small parts in a manufacturing operation
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
US4566935A (en) * 1984-07-31 1986-01-28 Texas Instruments Incorporated Spatial light modulator and method
US5061049A (en) * 1984-08-31 1991-10-29 Texas Instruments Incorporated Spatial light modulator and method
US4711014A (en) * 1985-08-29 1987-12-08 Vichem Corporation Method for handling semiconductor die and the like
JPS62293639A (ja) * 1986-06-12 1987-12-21 Oki Electric Ind Co Ltd 半導体ウエハ分割装置
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
JPH0353546A (ja) * 1989-07-21 1991-03-07 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
US5151389A (en) * 1990-09-10 1992-09-29 Rockwell International Corporation Method for dicing semiconductor substrates using an excimer laser beam
US5226099A (en) * 1991-04-26 1993-07-06 Texas Instruments Incorporated Digital micromirror shutter device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106068548A (zh) * 2014-03-07 2016-11-02 等离子瑟姆有限公司 用于对半导体晶圆进行等离子体切片的方法和设备
CN106068548B (zh) * 2014-03-07 2020-02-28 等离子瑟姆有限公司 用于对半导体晶圆进行等离子体切片的方法和设备
CN104787718A (zh) * 2015-01-15 2015-07-22 深圳市盛喜路科技有限公司 一种mems器件的分离方法
CN109940222A (zh) * 2019-04-03 2019-06-28 邯郸中威机械有限公司 一种可调式锯切热轧不锈钢的冲屑装置

Also Published As

Publication number Publication date
EP0655781A2 (en) 1995-05-31
CN1047669C (zh) 1999-12-22
EP0655781A3 (en) 1995-10-25
US5389182A (en) 1995-02-14
KR950007010A (ko) 1995-03-21
TW246736B (zh) 1995-05-01
CA2129212A1 (en) 1995-02-03

Similar Documents

Publication Publication Date Title
CN1047669C (zh) 微电子机械器件的制造方法
US5597767A (en) Separation of wafer into die with wafer-level processing
US7226810B2 (en) MEMS device wafer-level package
KR100276996B1 (ko) 디지탈 마이크로미러 디바이스 절단 후의 유사-웨이퍼 프로세싱 방법 및 디바이스 보호용 픽스처
US6573156B1 (en) Low defect method for die singulation and for structural support for handling thin film devices
KR101153637B1 (ko) 반도체 칩의 제조 방법
EP0676087B1 (en) Fabricating stacks of ic chips by segmenting a larger stack
US7989803B2 (en) Manufacturing method for semiconductor chips and semiconductor wafer
US6337027B1 (en) Microelectromechanical device manufacturing process
US20070181979A1 (en) Microelectromechanical semiconductor component with cavity structure and method for producing the same
US8257985B2 (en) MEMS device and fabrication method
CA2119505A1 (en) Grid array masking tape process
JPH08236485A (ja) ウェーハからダイを解体し分割する方法および装置
US7651734B2 (en) Micromechanical device fabrication
US7071025B2 (en) Separating wafers coated with plastic films
US20050214462A1 (en) Micromechanical device recoat methods
US6686291B1 (en) Undercut process with isotropic plasma etching at package level
US6420206B1 (en) Optical membrane singulation process utilizing backside and frontside protective coating during die saw
US6538328B1 (en) Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant
JPH0864558A (ja) マイクロ電子機械式デバイスを製造する方法
CN110534446B (zh) 一种mems晶圆级封装测试的方法
US4296370A (en) Method of detecting a thin insulating film over a conductor
US20040005735A1 (en) Dicing method for micro electro mechanical system chip
US20090144970A1 (en) Fabricating an array of mems parts on a substrate
Cole et al. MEMS packaging technique using HF vapor release

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee