CN112071950A - 一种用pecvd设备制备钝化接触电池的方法 - Google Patents

一种用pecvd设备制备钝化接触电池的方法 Download PDF

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CN112071950A
CN112071950A CN202010879928.7A CN202010879928A CN112071950A CN 112071950 A CN112071950 A CN 112071950A CN 202010879928 A CN202010879928 A CN 202010879928A CN 112071950 A CN112071950 A CN 112071950A
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pecvd
oxide layer
silicon
passivated contact
tunneling oxide
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杜哲仁
马丽敏
陈嘉
刘荣林
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Jiangsu Jietai Photoelectric Technology Co ltd
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Abstract

本发明的一种用PECVD设备制备钝化接触电池的方法，包括如下步骤：S1.选取晶体硅基体，对硅片进行预处理；S2.将步骤S1处理后的晶体硅基体放入板式PECVD设备，在板式PECVD工艺腔内首先完成隧穿氧化层沉积，然后在隧穿氧化层上面沉积原位掺杂非晶硅层；S3.将步骤S2处理后的晶体硅基体进行退火处理，使掺杂非晶硅完成晶化，从而得到掺杂多晶硅层。本发明具有以下技术效果：①单面成膜，无绕镀；②成膜温度低，不会造成基片弯曲；③无卡槽印，整面成膜均匀；④采用微波方式激发对基片的表面轰击损伤更小，钝化性能更好。

Description

一种用PECVD设备制备钝化接触电池的方法
技术领域
本发明涉及太阳能电池技术领域，具体涉及一种用PECVD设备制备钝化接触电池的方法。
背景技术
目前制备隧穿氧化层钝化接触电池的主要方法为LPCVD法(TOPCon)，但是这种制备方法存在以下问题：(1)由于LPCVD设备中硅片是采用背靠背的方法插入石英槽中，在高温分解硅烷来制备多晶硅时不可避免的会产生绕镀现象，即不仅电池背面沉积了多晶硅，电池的扩散面也沉积了部分多晶硅，这部分多出的多晶硅会严重影响太阳能电池的性能，因而需要额外增加专门的多晶硅清洗设备和清洗工艺，从而增加了生产复杂度，降低产品的良率，且多晶硅清洗设备属于新研发设备，设备价格较高，提高了制备成本；(2)SiO2层一般采用热氧化法生长，这种方法制备出的SiO2中的硅来源于硅片表面，当硅片表面形成一定厚度的SiO2层后，氧化剂必须以扩散的形式运动到Si-SiO2界面，再与硅反应生成SiO2，然而，随着SiO2层的增厚，薄膜的生长速率将逐渐下降，从而很难控制氧化速率，特别是难以制备出极薄的氧化层，如1-5nm的氧化层，而且很容易导致过渡族金属玷污；(3)LPCVD制备多晶硅薄膜需要较高的温度(600℃以上)，高温容易造成硅片弯曲，影响后续工艺步骤，进而影响电池片的良率。
如何制备没有多晶硅绕镀的钝化接触结构，是目前亟待解决的问题。PECVD(等离子体化学气相沉积)具有良好的单面成膜特性，目前主要用作太阳能电池正背面的钝化减反射薄膜的制备，如何将PECVD方法应用在多晶硅沉积上是本发明的重点。PECVD法可分为管式PECVD和板式PECVD。管式PECVD由于石墨舟的设置，在沉积成膜的时候会在石墨舟卡点处形成明显的卡槽印，该卡槽印的地方多晶硅沉积不完全，同时卡槽印也会对最终太阳能电池的良率产生很大的影响；此外，管式PECVD采用等离子体激发，这种激发方式对硅片表面的轰击损伤大，使得钝化性能降低。因此，本发明主要采用板式PECVD的方法制备钝化接触结构，该方法的优势在于：①单面成膜，无绕镀；②成膜温度低，不会造成基片弯曲；③无卡槽印，整面成膜均匀；④板式PECVD采用微波方式激发，对基片的表面轰击损伤更小，钝化性能更好。板式PECVD法未来将会成为钝化接触结构电池中钝化接触结构的主要制备工艺。
发明内容
本发明的目的在于克服现有技术的不足，提供一种用PECVD设备制备钝化接触结构的方法。
本发明的一种用PECVD设备制备钝化接触电池的方法，包括如下步骤：
S1.选取晶体硅基体，对硅片进行预处理；
S2.将步骤S1处理后的晶体硅基体放入板式PECVD设备，在板式PECVD工艺腔内首先完成隧穿氧化层沉积，然后在隧穿氧化层上面沉积原位掺杂非晶硅层；
S3.将步骤S2处理后的晶体硅基体进行退火处理，使掺杂非晶硅完成晶化，从而得到掺杂多晶硅层。
其中，在步骤S1中，预处理后在晶体硅基体的表面形成抛光面或制绒面。
其中，在步骤S2中，先在板式PECVD腔内通入氧气和一氧化二氮气体，激发方式为微波激发，加热温度为300～450℃，从而制备隧穿氧化层；隧穿氧化层的成分为二氧化硅、氮化硅或二氧化硅与氮化硅的混合物；隧穿氧化层的厚度为1～10nm。
其中，在步骤S2中，隧穿氧化层沉积完毕后，再向PECVD工艺腔内通入的掺杂非晶硅工艺气体以在隧穿氧化层上面沉积原位掺杂非晶硅层，掺杂非晶硅层的厚度为30～100nm。
其中，在步骤S2中，沉积掺杂非晶硅时，通入的工艺气体为氢气与磷烷，或者为氢气与硼烷，或者为氢气、硅烷与磷烷，或者为氢气、硅烷与硼烷。
其中，在步骤S3中，退火时，向PECVD工艺腔内通入氮气作为保护气体，退火温度800～900℃，退火时间15～120min。
本发明还提供了一种钝化接触太阳能电池，其钝化接触结构基于上述一种用PECVD设备制备钝化接触电池的方法制备而成。
通过上述技术方案，本发明的实施包括以下技术效果：①板式PECVD工艺沉积隧穿氧化层，单面成膜，无绕镀；②板式PECVD工艺沉积隧穿氧化层成膜温度低，不会造成基片弯曲；③板式PECVD工艺沉积隧穿氧化层，无卡槽印，整面成膜均匀；④板式PECVD工艺采用微波方式激发对基片的表面轰击损伤更小，钝化性能更好。
附图说明
图1为本发明实施例1及2的步骤S1中硅片结构示意图；
图2为本发明实施例1及2的步骤S2中硅片结构示意图；
图3为本发明实施例3及4的步骤S1中硅片结构示意图；
图4为本发明实施例3及4的步骤S2中硅片结构示意图。
图中：11-制绒面硅片，12-抛光面硅片，2-隧穿氧化层，3-掺杂非晶硅层。
具体实施方式
下面结合实例对本发明进行详细的说明。
具体实施例仅仅是对本发明的解释，并不是对本发明的限制，本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改，但只要在本发明的权利要求范围内都受到保护。
实施例1：
一种用PECVD设备制备钝化接触电池的方法，包括如下步骤：
S1.选取N型晶体硅基体，对硅片进行预处理，在硅片表面形成制绒面，获得如图1所示制绒面硅片11；
S2.将步骤S1处理后的晶体硅基体放入板式PECVD设备，在板式PECVD工艺腔内对硅片进行加热处理，加热方式为加热板加热，加热温度350℃，同时在板式PECVD工艺腔内通入氧气和一氧化二氮气体并采用微波激发，从而在硅片的制绒面制备隧穿氧化层2，隧穿氧化层2的成分为二氧化硅与氮化硅的混合物，其厚度为5nm，；在沉积完隧穿氧化层2之后，在板式PECVD工艺腔内通入氢气与磷烷的工艺气体，在隧穿氧化层2上面沉积磷掺杂的掺杂非晶硅层3，厚度为100nm，如图2所示；
S3.将步骤S2处理后的晶体硅基体进行退火处理，向PECVD工艺腔内通入氮气作为保护气体，退火温度850℃，退火时间30min，使掺杂非晶硅层3完成晶化转变成掺杂多晶硅层，至此完成该钝化接触结构的制备。
实施例2：
本实施例2与实施例1的不同之处在于，在沉积完隧穿氧化层2之后，在板式PECVD工艺腔内通入氢气与硼烷的工艺气体，在隧穿氧化层2上面沉积硼掺杂的掺杂非晶硅层3。
实施例3：
一种用PECVD设备制备钝化接触电池的方法，包括如下步骤：
S1.选取P型晶体硅基体，对硅片进行预处理，在硅片表面形成抛光面，获得如图3所示抛光面硅片12；
S2.将步骤S1处理后的晶体硅基体放入板式PECVD设备，在板式PECVD工艺腔内对硅片进行加热处理，加热方式为加热板加热，加热温度400℃，同时在板式PECVD工艺腔内通入氧气和一氧化二氮气体并采用微波激发，从而在硅片的制绒面制备隧穿氧化层2，隧穿氧化层2的成分为二氧化硅与氮化硅的混合物，其厚度为10nm；在沉积完隧穿氧化层2之后，在板式PECVD工艺腔内通入氢气、硅烷与磷烷的工艺气体，在隧穿氧化层2上面沉积磷掺杂的掺杂非晶硅层3，厚度为60nm，如图4所示；
S3.将步骤S2处理后的晶体硅基体进行退火处理，向PECVD工艺腔内通入氮气作为保护气体，退火温度830℃，退火时间40min，使掺杂非晶硅层3完成晶化转变成掺杂多晶硅层，至此完成该钝化接触结构的制备。
实施例4：
本实施例4与实施例3的不同之处在于，在沉积完隧穿氧化层2之后，在板式PECVD工艺腔内通入氢气、硅烷与硼烷的工艺气体，在隧穿氧化层2上面沉积硼掺杂的掺杂非晶硅层3。
实施例5：
本发明还提供了一种钝化接触太阳能电池，其钝化接触结构基于上述实施例1-4任一项制备而成。

Claims (7)

1.一种用PECVD设备制备钝化接触电池的方法，其特征在于，包括如下步骤：
S1.选取晶体硅基体，对硅片进行预处理；
S2.将步骤S1处理后的晶体硅基体放入板式PECVD设备，在板式PECVD工艺腔内首先完成隧穿氧化层沉积，然后在隧穿氧化层上面沉积原位掺杂非晶硅层；
S3.将步骤S2处理后的晶体硅基体进行退火处理，使掺杂非晶硅完成晶化，从而得到掺杂多晶硅层。
2.基于权利要求1的一种用PECVD设备制备钝化接触电池的方法，其特征在于，在步骤S1中，预处理后在晶体硅基体的表面形成抛光面或制绒面。
3.基于权利要求1的一种用PECVD设备制备钝化接触电池的方法，其特征在于，在步骤S2中，先在板式PECVD腔内通入氧气和一氧化二氮气体，激发方式为微波激发，加热温度为300～450℃，从而制备隧穿氧化层；隧穿氧化层的成分为二氧化硅、氮化硅或二氧化硅与氮化硅的混合物；隧穿氧化层的厚度为1～10nm。
4.基于权利要求3的一种用PECVD设备制备钝化接触电池的方法，其特征在于，在步骤S2中，隧穿氧化层沉积完毕后，再向PECVD工艺腔内通入的掺杂非晶硅工艺气体以在隧穿氧化层上面沉积原位掺杂非晶硅层，掺杂非晶硅层的厚度为30～100nm。
5.基于权利要求4的一种用PECVD设备制备钝化接触电池的方法，其特征在于，在步骤S2中，沉积掺杂非晶硅时，通入的工艺气体为氢气与磷烷，或者为氢气与硼烷，或者为氢气、硅烷与磷烷，或者为氢气、硅烷与硼烷。
6.基于权利要求1的一种用PECVD设备制备钝化接触电池的方法，其特征在于，在步骤S3中，退火时，向PECVD工艺腔内通入氮气作为保护气体，退火温度800～900℃，退火时间15～120min。
7.一种钝化接触太阳能电池，其特征在于，太阳能电池的钝化接触结构基于权利要求1-6任一项制备而成。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488562A (zh) * 2021-07-23 2021-10-08 常州时创能源股份有限公司 一种原位掺杂非晶硅的晶化退火处理方法
CN116387409A (zh) * 2023-06-06 2023-07-04 正泰新能科技有限公司 一种n型tbc太阳能电池及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488562A (zh) * 2021-07-23 2021-10-08 常州时创能源股份有限公司 一种原位掺杂非晶硅的晶化退火处理方法
CN116387409A (zh) * 2023-06-06 2023-07-04 正泰新能科技有限公司 一种n型tbc太阳能电池及其制备方法

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