CN112071823A - Alignment mark and preparation method thereof - Google Patents
Alignment mark and preparation method thereof Download PDFInfo
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- CN112071823A CN112071823A CN202010979393.0A CN202010979393A CN112071823A CN 112071823 A CN112071823 A CN 112071823A CN 202010979393 A CN202010979393 A CN 202010979393A CN 112071823 A CN112071823 A CN 112071823A
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- film layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application discloses counterpoint mark and preparation method thereof, wherein, the counterpoint mark is including being located the mark pattern on each layer function rete respectively, and be used for fixing all mark pattern's fixed rete, fixed rete the extending direction with the surface of function rete is crossing, because the existence of fixed rete for when the temporary structure in each layer function rete was got rid of by the sculpture, the phenomenon of collapsing can not appear in each remaining layer function rete, has also avoided being located the mark pattern on each layer function rete and has appeared the condition that counterpoint precision descends because the function rete collapses, has solved the problem that leads to the counterpoint precision of counterpoint mark to descend by a wide margin because removal of temporary structure.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to an alignment mark and a preparation method thereof.
Background
With the continuous development of semiconductor manufacturing processes and the continuous reduction of line width dimensions, the requirements on the precision of a photoetching process and a photoetching system are higher and higher, and the overlay precision is reflected in that the product yield is more and more influenced.
In the actual production process, because the preparation and etching of temporary structures such as a dummy gate may be involved in the preparation process of various devices, when the temporary structures are removed, a Collapse (Collapse) phenomenon may occur between the multilayer laminated film layers, and then the alignment marks on the film layers are displaced, which results in a great reduction in alignment precision and alignment precision.
Disclosure of Invention
In order to solve the above technical problems, the present application provides an alignment mark and a method for manufacturing the same, so as to solve the problem that the alignment precision of the alignment mark is greatly reduced due to the removal of the temporary structure.
In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:
an alignment mark for alignment of a multi-layered functional film layer, the alignment mark comprising:
the mark patterns are respectively positioned on each layer of the functional film layer, and the extending direction of the mark patterns is parallel to the surface of the functional film layer where the mark patterns are positioned;
and the fixing film layer is used for fixing all the mark patterns, and the extending direction of the fixing film layer is intersected with the surface of the functional film layer.
Optionally, the fixing film layer is fixedly connected to at least one side edge of all the functional film layers.
Optionally, the fixing film layer is fixedly connected to all the side edges of all the functional film layers.
Optionally, the etching rate of the temporary structure film layer in the functional film layer forming process is greater than the etching rate of the fixed film layer, and the etching rate of the temporary structure film layer is greater than the etching rate of the functional film layer.
Optionally, the mark pattern includes at least one of an overlay mark pattern, a lithography alignment mark pattern, and an L-shaped alignment pattern.
Optionally, the overlay mark pattern includes a plurality of first marks extending in a first direction and a plurality of second marks extending in a second direction;
the first direction and the second direction are both parallel to the surface of the functional film layer, and the first direction and the second direction are perpendicular.
A preparation method of alignment marks comprises the following steps:
in the forming process of the multi-layer functional film layer, sequentially forming mark patterns on each layer of the functional film layer and a fixed film layer for fixing all the mark patterns;
the extending direction of the mark pattern is parallel to the surface of the functional film layer where the mark pattern is located;
the extending direction of the fixing film layer is intersected with the surface of the functional film layer.
Optionally, the fixing film layer is fixedly connected to at least one side edge of all the functional film layers.
Optionally, the fixing film layer is fixedly connected to all the side edges of all the functional film layers.
Optionally, the etching rate of the temporary structure film layer in the functional film layer forming process is greater than the etching rate of the fixed film layer, and the etching rate of the temporary structure film layer is greater than the etching rate of the functional film layer.
According to the technical scheme, the embodiment of the application provides the alignment mark and the preparation method thereof, wherein the alignment mark comprises the mark patterns which are respectively positioned on each layer of functional film layer and the fixed film layer which is used for fixing all the mark patterns, the extending direction of the fixed film layer is intersected with the surface of the functional film layer, and due to the existence of the fixed film layer, when the temporary structure in each layer of functional film layer is etched and removed, the collapse phenomenon of each remaining layer of functional film layer can not occur, the condition that the alignment precision is reduced due to the collapse of the functional film layer of the mark patterns positioned on each layer of functional film layer is avoided, and the problem that the alignment precision of the alignment mark is greatly reduced due to the removal of the temporary structure is solved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a multi-layer functional film prepared in the prior art;
FIG. 2 is a schematic cross-sectional view illustrating a prior art process for removing a temporary structural film;
FIG. 3 is a diagram illustrating a multi-layer functional film with collapse phenomenon in the prior art;
FIG. 4 is a schematic top view of a marking pattern according to an embodiment of the present disclosure;
FIG. 5 is a schematic cross-sectional view of a multi-layer functional film according to an embodiment of the present disclosure;
FIG. 6 is a schematic cross-sectional view of the temporary structure film layer of FIG. 5 removed according to one embodiment of the present disclosure;
FIG. 7 is a schematic cross-sectional view of the temporary structure layer of FIG. 5 removed according to another embodiment of the present application;
fig. 8 is a schematic flowchart of a method for manufacturing an alignment mark according to an embodiment of the present disclosure.
Detailed Description
As described in the background art, in the prior art, since the fabrication and etching of temporary structures such as dummy gates may be involved in the fabrication process of various devices, when these temporary structures are removed, a collapse phenomenon may occur between multiple stacked film layers, referring to fig. 1, 2, and 3, fig. 1 is a multi-layer functional film layer after fabrication, where an a functional film layer 20 is a temporary structure film layer, and after the fabrication of other film layer structures is completed, the a functional film layer 20 is removed by etching (as shown in fig. 2), and at this time, a collapse phenomenon may occur in the remaining B functional film layer 10, as shown in fig. 3, which causes displacement of different sizes of mark patterns on each functional film layer, resulting in a great decrease in alignment accuracy.
In view of this, an embodiment of the present application provides an alignment mark for alignment of a multi-layered functional film layer, the alignment mark including:
the mark patterns are respectively positioned on each layer of the functional film layer, and the extending direction of the mark patterns is parallel to the surface of the functional film layer where the mark patterns are positioned;
and the fixing film layer is used for fixing all the mark patterns, and the extending direction of the fixing film layer is intersected with the surface of the functional film layer.
The alignment mark comprises mark patterns which are respectively positioned on each functional film layer and a fixed film layer which is used for fixing the mark patterns, the extending direction of the fixed film layer is intersected with the surface of the functional film layer, and due to the existence of the fixed film layer, when the temporary structure in each functional film layer is etched and removed, the collapse phenomenon of each residual functional film layer can not occur, the condition that the alignment precision is reduced due to the collapse of the function film layer of the mark patterns positioned on each functional film layer is also avoided, and the problem that the alignment precision of the alignment mark is greatly reduced due to the removal of the temporary structure is solved.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the present application provides an alignment mark, as shown in fig. 4, 5 and 6, for aligning a multi-layered functional film layer 300, the alignment mark including:
the mark patterns 100 are respectively located on each layer of the functional film layer 300, and the extending direction of the mark patterns 100 is parallel to the surface of the functional film layer 300 where the mark patterns 100 are located;
a fixing film layer 200 for fixing all the marking patterns 100, wherein the fixing film layer 200 extends in a direction intersecting with a surface of the functional film layer 300.
Referring to fig. 4, fig. 4 is a schematic top view of the alignment Mark, and fig. 4 illustrates an Overlay Mark (OVL Mark) pattern as an example. Fig. 5 and 6 are schematic cross-sectional structural diagrams of a plurality of functional film layers 300, fig. 5 shows a temporary structural module 400 located between adjacent functional film layers 300 in addition to a plurality of functional film layers 300, in fig. 5, the fixing film layer 200 fixes the mark patterns 100 located on the functional film layers 300 together and fixes a plurality of functional film layers 300 together, when the temporary structural module 400 is etched away, referring to fig. 6, when the temporary structural module 400 is removed, the fixing film layer 200 still fixes the mark patterns 100 and the functional film layers 300 together, on one hand, the functional film layers 300 are prevented from collapsing, on the other hand, the relative positions of the mark patterns 100 are kept unchanged, and the positional stability between the mark patterns 100 is ensured, thereby ensuring the alignment accuracy of the alignment mark. Regarding the positional relationship between the extending direction of the fixing film layer 200 and the surface of the functional film layer 300, optionally, in fig. 5-7, the extending direction of the fixing film layer 200 is perpendicular or approximately perpendicular to the surface of the functional film layer 300.
In this embodiment, the alignment mark includes mark patterns 100 respectively located on each functional film 300, and a fixed film 200 for fixing all the mark patterns 100, the extending direction of the fixed film 200 intersects with the surface of the functional film 300, and due to the existence of the fixed film 200, when the temporary structure in each functional film 300 is etched and removed, the remaining functional film 300 does not collapse, the situation that the alignment accuracy is reduced due to the collapse of the functional film 300 of the mark patterns 100 located on each functional film 300 is also avoided, and the problem that the alignment accuracy of the alignment mark is greatly reduced due to the removal of the temporary structure is solved.
Optionally, referring to fig. 7 and 8, the fixing film layer 200 is fixedly connected to at least one side of all the functional film layers 300, fig. 7 and 8 are schematic top view structural diagrams of the mark pattern 100, in fig. 6, the fixing film layer 200 is connected to one side of the functional film layer 300, in fig. 7, the fixing film layer 200 is connected to two sides of the functional film layer 300, and in other embodiments of the present application, the fixing film layer 200 may also be connected to three sides of the functional film layer 300. Generally, the greater the number of the connecting portions between the fixing film layer 200 and the side edges of all the functional film layers 300, the higher the fixing firmness between the fixing film layer 200 and the functional film layers 300, but the preparation process of the fixing film layer 200 may be more complicated, and in an application scenario where the fixing firmness between the fixing film layer 200 and the functional film layers 300 is higher, the fixing film layer 200 is fixedly connected to all the side edges of all the functional film layers 300.
The forming materials of the mark pattern 100, the functional film 300, and the temporary structure module 400 are not limited in this application, but in order to ensure that the fixed film 200 is not etched away in the etching process of the temporary structure module 400, optionally, the etching rate of the temporary structure module 400 in the forming process of the functional film 300 is greater than the etching rate of the fixed film 200, and the etching rate of the temporary structure module 400 is greater than the etching rate of the functional film 300.
For the distance between the mark pattern 100 and the fixing film layer 200 in the plane parallel to the plane of the functional film layer 300, optionally, the distance between the mark pattern 100 and the fixing film layer 200 in the plane parallel to the plane of the functional film layer 300 generally needs to be greater than or equal to 0.14 μm.
As for the kind of the Mark pattern 100, optionally, the Mark pattern 100 includes at least one of an overlay Mark pattern 100, a lithography Alignment Mark (Alignment Mark) pattern, and an L-type Alignment pattern.
With respect to the overlay mark pattern 100, optionally, and still referring to FIG. 4, the overlay mark pattern 100 includes a plurality of first marks 120 extending in a first direction DR1 and a plurality of second marks 110 extending in a second direction DR 2;
the first direction DR1 and the second direction DR2 are both parallel to the surface of the functional film layer 300, and the first direction DR1 and the second direction DR2 are perpendicular.
The method for manufacturing the alignment mark provided in the embodiments of the present application is described below, and the method for manufacturing the alignment mark described below and the alignment mark described above may be referred to in correspondence.
Correspondingly, an embodiment of the present application further provides a method for manufacturing an alignment mark, and with reference to fig. 8, the method for manufacturing an alignment mark includes:
in the forming process of the multi-layer functional film layer, sequentially forming mark patterns on each layer of the functional film layer and a fixed film layer for fixing all the mark patterns;
the extending direction of the mark pattern is parallel to the surface of the functional film layer where the mark pattern is located;
the extending direction of the fixing film layer is intersected with the surface of the functional film layer.
Optionally, the fixing film layer is fixedly connected to at least one side edge of all the functional film layers.
Optionally, the fixing film layer is fixedly connected to all the side edges of all the functional film layers.
Optionally, the etching rate of the temporary structure film layer in the functional film layer forming process is greater than the etching rate of the fixed film layer, and the etching rate of the temporary structure film layer is greater than the etching rate of the functional film layer.
To sum up, this application embodiment provides a counterpoint mark and preparation method thereof, wherein, the counterpoint mark is including lieing in the mark pattern on each layer function rete respectively, and be used for fixing all the fixed rete of mark pattern, the extending direction of fixed rete with the surface of function rete is crossing, because the existence of fixed rete for when the temporary structure in each layer function rete was got rid of by the sculpture, the phenomenon of collapsing can not appear in each remaining layer function rete, has also avoided lieing in the mark pattern on each layer function rete and has appeared the condition that counterpoint precision descends because the function rete collapses, has solved because removal of temporary structure and has leaded to the problem of the decline by a wide margin of counterpoint precision of counterpoint mark.
Features described in the embodiments in the present specification may be replaced with or combined with each other, each embodiment is described with a focus on differences from other embodiments, and the same and similar portions among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An alignment mark for alignment of a multi-layered functional film layer, the alignment mark comprising:
the mark patterns are respectively positioned on each layer of the functional film layer, and the extending direction of the mark patterns is parallel to the surface of the functional film layer where the mark patterns are positioned;
and the fixing film layer is used for fixing all the mark patterns, and the extending direction of the fixing film layer is intersected with the surface of the functional film layer.
2. The alignment mark of claim 1, wherein the fixing film layer is fixedly connected to at least one side of all the functional film layers.
3. The alignment mark of claim 2, wherein the fixing film layer is fixedly connected to all sides of all the functional film layers.
4. The alignment mark according to claim 1, wherein an etching rate of the temporary structure film layer during the formation of the functional film layer is greater than an etching rate of the fixed film layer, and the etching rate of the temporary structure film layer is greater than the etching rate of the functional film layer.
5. The alignment mark of claim 1, wherein the mark pattern comprises at least one of an overlay mark pattern, a lithographic alignment mark pattern, and an L-shaped alignment pattern.
6. The alignment mark according to claim 5, wherein the overlay mark pattern comprises a plurality of first marks extending in a first direction and a plurality of second marks extending in a second direction;
the first direction and the second direction are both parallel to the surface of the functional film layer, and the first direction and the second direction are perpendicular.
7. A method for preparing a contraposition mark is characterized by comprising the following steps:
in the forming process of the multi-layer functional film layer, sequentially forming mark patterns on each layer of the functional film layer and a fixed film layer for fixing all the mark patterns;
the extending direction of the mark pattern is parallel to the surface of the functional film layer where the mark pattern is located;
the extending direction of the fixing film layer is intersected with the surface of the functional film layer.
8. The method of claim 7, wherein the fixed film layer is fixedly attached to at least one side edge of all of the functional film layers.
9. The method of claim 8, wherein the fixed film layer is fixedly attached to all sides of all of the functional film layers.
10. The method of claim 7, wherein an etching rate of the temporary structure film layer during the formation of the functional film layer is greater than an etching rate of the fixed film layer, and the etching rate of the temporary structure film layer is greater than the etching rate of the functional film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010979393.0A CN112071823B (en) | 2020-09-17 | 2020-09-17 | Alignment mark and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010979393.0A CN112071823B (en) | 2020-09-17 | 2020-09-17 | Alignment mark and preparation method thereof |
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| CN112071823A true CN112071823A (en) | 2020-12-11 |
| CN112071823B CN112071823B (en) | 2022-07-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161367A (en) * | 2021-03-04 | 2021-07-23 | 长江存储科技有限责任公司 | Semiconductor structure and manufacturing method thereof |
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| CN104952851B (en) * | 2014-03-28 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Alignment mark and its alignment methods |
| CN105870103B (en) * | 2016-05-31 | 2019-07-12 | 京东方科技集团股份有限公司 | A kind of alignment mark and preparation method thereof, substrate, display panel, display device |
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| CN112071823B (en) | 2022-07-22 |
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