CN112054768A - Low-phase-noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation function - Google Patents
Low-phase-noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation function Download PDFInfo
- Publication number
- CN112054768A CN112054768A CN202010908303.9A CN202010908303A CN112054768A CN 112054768 A CN112054768 A CN 112054768A CN 202010908303 A CN202010908303 A CN 202010908303A CN 112054768 A CN112054768 A CN 112054768A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- inductor
- resistor
- nmos tube
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010355 oscillation Effects 0.000 title claims abstract description 39
- 239000003990 capacitor Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention discloses a low-phase-noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation, which comprises a first NMOS (N-channel metal oxide semiconductor) tube and a second NMOS tube; the method is characterized in that: the first NMOS tube and the second NMOS tube are cross-coupled tubes, the drain electrode of the first NMOS tube is connected with the grid electrode of the second NMOS tube, and the grid electrode of the first NMOS tube is connected with the drain electrode of the second NMOS tube; the source electrodes of the first NMOS tube and the second NMOS tube are respectively connected with the source electrodes of the first PMOS tube and the second PMOS tube; a drain signal of the first NMOS tube is connected to the ground through a fourth capacitor, a fourth inductor and a fourth resistor which are sequentially connected in series, a drain signal of the second NMOS tube is connected to the ground through a third capacitor, a third inductor and a third resistor which are sequentially connected in series, a connection node of the fourth capacitor and the fourth inductor is connected to the grid electrode of the first PMOS tube through a feedback signal line, and a connection node of the third capacitor and the third inductor is connected to the grid electrode of the second PMOS tube through a feedback signal line; the invention can be applied to a high-performance phase-locked loop system.
Description
Technical Field
The invention relates to a voltage-controlled oscillator, in particular to a low-phase-noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation.
Background
The phase-locked loop can be used for providing local oscillation signals for a radio frequency receiving and transmitting system or providing clock signals for a data converter and a digital circuit, and the signal quality of the local oscillation signals or the clock signals has direct influence on key indexes in the radio frequency system and the high-speed high-precision data converter. Meanwhile, when the LC voltage-controlled oscillator is applied to a phase-locked loop system, when the temperature of the external environment changes, the parasitic capacitance and inductance in the voltage-controlled oscillator have obvious temperature characteristics, and the LC voltage-controlled oscillator circuit without temperature compensation easily causes direct lock losing of the phase-locked loop. These application environments put a clear demand on low phase noise voltage controlled oscillators with oscillation frequency temperature compensation.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a low-phase-noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation.
The technical scheme of the invention is as follows: a low-phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation comprises a first NMOS tube and a second NMOS tube; the method is characterized in that: the first NMOS tube and the second NMOS tube are cross-coupled tubes, the drain electrode of the first NMOS tube is connected with the grid electrode of the second NMOS tube, and the grid electrode of the first NMOS tube is connected with the drain electrode of the second NMOS tube; the source electrodes of the first NMOS tube and the second NMOS tube are respectively connected with the source electrodes of the first PMOS tube and the second PMOS tube, so that partial noise of the NMOS tube and the PMOS tube is up-converted to be close to the resonant frequency; compared with the traditional structure, the noise contribution of the MOS is reduced, and the better phase noise performance is realized; in order to realize complete feedback, a drain signal of the first NMOS transistor is connected to the ground through a fourth capacitor, a fourth inductor and a fourth resistor which are sequentially connected in series, a drain signal of the second NMOS transistor is connected to the ground through a third capacitor, a third inductor and a third resistor which are sequentially connected in series, a connection node of the fourth capacitor and the fourth inductor is connected to the grid electrode of the first PMOS transistor through a feedback signal line, and a connection node of the third capacitor and the third inductor is connected to the grid electrode of the second PMOS transistor through a feedback signal line.
According to the preferred scheme of the low-phase-noise voltage-controlled oscillator circuit with the oscillation frequency temperature compensation, a resonant cavity is formed by adopting a continuous tuning circuit with the temperature compensation and a capacitor array circuit, wherein the continuous tuning circuit is composed of a first capacitor, a second capacitor, a first variable capacitance diode, a second variable capacitance diode, a first inductor and a second inductor; one end of the first variable capacitance diode is connected with one end of the second variable capacitance diode, the connecting line is named as VTUNE, the other end of the first variable capacitance diode is connected with one end of the first capacitor, the first inductor and one end of the third variable capacitance diode, the other end of the second variable capacitance diode is connected with one end of the second capacitor, the second inductor and one end of the fourth variable capacitance diode, the other ends of the first inductor and the second inductor are grounded, the other end of the first capacitor is connected with the drain electrode of the first NMOS transistor, and the other end of the second capacitor is connected with the drain electrode of the second NMOS transistor; the other ends of the third variable capacitance diode and the fourth variable capacitance diode are connected with a positive temperature voltage generating circuit, and the capacitor array circuit is connected between the drain electrode of the first NMOS tube and the drain electrode of the second NMOS tube.
According to the preferred scheme of the low-phase-noise voltage-controlled oscillator circuit with the oscillation frequency temperature compensation, the temperature compensation circuit is adopted to tune the continuous tuning circuit so as to realize the oscillation frequency temperature compensation; the temperature compensation circuit comprises a positive temperature voltage generation circuit, a third variable capacitance diode and a fourth variable capacitance diode, wherein the third variable capacitance diode and the fourth variable capacitance diode are connected in series, and one end of the third variable capacitance diode is connected to a connection node of the first variable capacitance diode and the first inductor; one end of the fourth variable capacitance diode is connected to a connection node of the second variable capacitance diode and the second inductor; and the voltage VTEMP generated by the positive temperature voltage generation circuit is used for tuning the third variable capacitance diode and the fourth variable capacitance diode so as to realize the temperature compensation of the oscillation frequency of the voltage-controlled oscillator.
According to the preferable scheme of the low-phase-noise voltage-controlled oscillator circuit with the oscillation frequency temperature compensation, the positive-temperature voltage generating circuit is composed of a first diode, a second diode, a fifth resistor and a fifth capacitor; the first diode and the second diode are connected in series, the fifth resistor and the fifth capacitor are connected in parallel and then connected in series with the two diodes, and the connection node of the second diode, the fifth resistor and the fifth capacitor is connected to the connection node of the third varactor and the fourth varactor. The diode is formed by short-circuiting the collector and the base of the triode. The voltage VTEMP generated by the positive temperature voltage generation circuit is used for tuning the variable capacitance diode and realizing the temperature compensation of the oscillation frequency of the voltage-controlled oscillator.
According to the preferred scheme of the low-phase-noise voltage-controlled oscillator circuit with the oscillation frequency temperature compensation, the capacitor array implementation circuit comprises a plurality of controllable capacitor switches, and all the controllable capacitor switches are connected in parallel; the circuit structure of each controllable capacitance switch is the same, and each controllable capacitance switch comprises a first resistor, a second resistor, a first capacitor, a second capacitor and a first NMOS transistor; one ends of the first resistor and the second resistor are connected together, and the other ends of the first resistor and the second resistor are respectively connected with the source electrode and the drain electrode of the first NMOS tube; one end of the capacitor I is connected with the source electrode of the MOS transistor I, and one end of the capacitor II is connected with the drain electrode of the MOS transistor I; the other ends of the first capacitor and the second capacitor are respectively connected with the drain electrode of the first NMOS tube and the drain electrode of the second NMOS tube.
The low-phase-noise voltage-controlled oscillator circuit with the oscillation frequency temperature compensation has the beneficial effects that: the invention reduces the noise from mixing to high frequency, and realizes the optimization of the phase noise of the voltage-controlled oscillator; according to the invention, the temperature compensation of the oscillation frequency of the voltage-controlled oscillator is realized through the positive temperature voltage generation circuit, and the temperature drift value of the oscillation frequency is effectively reduced; the invention has excellent phase noise performance and oscillation frequency temperature compensation effect, and can be applied to a high-performance phase-locked loop system.
Drawings
Fig. 1 is a schematic block diagram of a low-phase-noise voltage-controlled oscillator with oscillation frequency temperature compensation according to the present invention.
Fig. 2 is a circuit diagram of a two-level inverter.
Fig. 3 is a circuit diagram of a capacitive array implementation circuit.
Fig. 4 is a diagram of the effect of temperature compensation of the full-band oscillation frequency.
Fig. 5 is a phase noise implementation.
Detailed Description
Referring to fig. 1, a low phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation includes first and second NMOS transistors NM1, NM 2; the method is characterized in that: the first NMOS tube NM1 and the second NMOS tube NM2 are cross-coupled tubes, the drain electrode of the first NMOS tube NM1 is connected with the grid electrode of the second NMOS tube NM2, and the grid electrode of the first NMOS tube NM1 is connected with the drain electrode of the second NMOS tube NM 2; the source electrodes of the first NMOS transistor NM1 and the second NMOS transistor NM2 are respectively connected with the source electrodes of the first PMOS transistor PM1 and the second PMOS transistor PM2, so that partial noise of the NMOS transistor and the PMOS transistor is up-converted to be close to the resonant frequency; compared with the traditional structure, the noise contribution of the MOS is reduced, and the better phase noise performance is realized; in order to realize complete feedback, a drain signal of the first NMOS transistor is connected to the ground through a fourth capacitor, a fourth inductor and a fourth resistor which are sequentially connected in series, a drain signal of the second NMOS transistor is connected to the ground through a third capacitor, a third inductor and a third resistor which are sequentially connected in series, a connection node of the fourth capacitor and the fourth inductor is connected to the grid electrode of the first PMOS transistor through a feedback signal line, and a connection node of the third capacitor and the third inductor is connected to the grid electrode of the second PMOS transistor through a feedback signal line.
Specifically, the NM1 tube and the NM2 tube are cross-coupled tubes, the drain of the NM1 tube is connected with the gate of the NM2 tube, the connection line is named tan ka, the gate of the NM1 tube is connected with the drain of the NM2 tube, the connection line is named tan kb, and the source of the NM1 tube and the source of the NM2 tube are respectively connected with the sources of the PM1 tube and the PM2 tube.
The grid electrode of the PM1 tube is connected with one ends of a capacitor CL4 and an inductor L4, the other end of the capacitor CL4 is connected with the grid electrode of the NM2 tube, the other end of an inductor CL4 is connected with a resistor RL4, the other end of the resistor RL4 is grounded, and the source electrode of the PM1 tube is grounded; the grid electrode of the PM2 tube is connected with one ends of a capacitor CL3 and an inductor L3, the other end of the capacitor CL3 is connected with the grid electrode of the NM1 tube, the other end of an inductor L3 is connected with one end of a resistor RL3, the other end of the resistor RL3 is grounded, and the source electrode of the PM2 tube is grounded.
The source electrode of the PM3 tube is connected with VCC, the grid electrode is connected with PD, the drain electrode is connected with one end of an inductor Ld, and the other two ends of the inductor Ld are respectively connected with a connecting wire tanka and tankb.
In a specific embodiment, a resonant cavity is formed by adopting a continuous tuning circuit with temperature compensation and a capacitor array circuit, wherein the continuous tuning circuit with temperature compensation consists of a temperature compensation circuit and a continuous tuning circuit; the continuous tuning circuit is composed of a first capacitor C1, a second capacitor C2, a first varactor CV1, a second varactor CV2, a first inductor L1, a second inductor L2; one end of a first varactor CV1 and one end of a second varactor CV2 are connected, the connection line is named as VTUNE, the other end of the first varactor CV1 is connected with one end of a first capacitor C1, a first inductor L1 and a third varactor CV3, the other end of the second varactor CV2 is connected with one end of a second capacitor C2, a second inductor L2 and a fourth varactor CV4, the other ends of the first inductor L1 and the second inductor L2 are grounded, the other end of the first capacitor C1 is connected with the drain electrode of a first NMOS tube NM1, and the other end of the second capacitor C2 is connected with the drain electrode of a second NMOS tube NM 2; the other ends of the third varactor CV3 and the fourth varactor CV4 are connected to a positive temperature voltage generation circuit, and the capacitor array circuit is connected between the drain of the first NMOS transistor NM1 and the drain of the second NMOS transistor NM 2.
The temperature compensation circuit is adopted to tune the continuous tuning circuit to realize the temperature compensation of the oscillation frequency; the temperature compensation circuit comprises a positive temperature voltage generation circuit, a third variable capacitance diode CV3 and a fourth variable capacitance diode CV4, wherein the third variable capacitance diode CV3 and the fourth variable capacitance diode CV4 are connected in series, and one end of the third variable capacitance diode CV3 is connected to a connection node of the first variable capacitance diode CV1 and the first inductor L1; one end of the fourth varactor CV4 is connected to the connection node of the second varactor CV2 and the second inductor L2; and the voltage VTEMP generated by the positive temperature voltage generation circuit is used for tuning the third variable capacitance diode and the fourth variable capacitance diode so as to realize the temperature compensation of the oscillation frequency of the voltage-controlled oscillator.
The positive temperature voltage generating circuit is composed of a first diode Q1, a second diode Q2, a resistor Rb and a capacitor Cb; the first diode Q1 and the second diode Q2 are connected in series, the resistor Rb and the capacitor Cb are connected in parallel and then connected in series with the two diodes, and the connection node of the second diode, the resistor Rb and the capacitor Cb is connected to the connection node of the third varactor diode and the fourth varactor diode. The emitter of the Q2 tube is connected with the connecting wire VTEMP and one end of the resistor Rb and the capacitor Cb, the other end of the resistor Rb and the capacitor Cb is grounded, the base of the Q2 tube is connected with the collector and the emitter of the Q1 tube, and the base of the Q1 tube is connected with the collector and the drain of the PM3 tube.
In a specific embodiment, referring to fig. 2 and 3, the capacitor array implementation circuit includes a plurality of controllable capacitor switches, and all the controllable capacitor switches are connected in parallel; the circuit structure of each controllable capacitance switch is the same, but the size of the NMOS transistor I and the capacitance value of the capacitor are different according to the ratio of 1:2:4:8: 16: … … 2n-1The setting is performed. Each controllable capacitance switch comprises a first resistor, a second resistor, a first capacitor, a second capacitor and a first NMOS transistor; one ends of the first resistor and the second resistor are connected together, and the other ends of the first resistor and the second resistor are respectively connected with the source electrode and the drain electrode of the first NMOS tube; one end of the first capacitor is connected with the source electrode of the first NMOS tube, and one end of the second capacitor is connected with the drain electrode of the first NMOS tube; the other ends of the first capacitor and the second capacitor are respectively connected with the drain of the first NMOS transistor NM1 and the drain of the second NMOS transistor NM 2. The external control signal controls the controllable capacitance switch through the two-stage inverter; the base electrode of the NMOS tube I receives an output signal of the first-stage inverter, and the resistor I and the resistor II receive an output signal of the second-stage inverter.
FIG. 4 is a simulation effect diagram of phase noise of 6GHz oscillation frequency obtained by using the inventive voltage-controlled oscillator circuit, which shows that the phase noise reaches-116.5 dBc/Hz at frequency offset of 100kHz, and has very low phase noise characteristic.
FIG. 5 is a diagram of the broadband temperature compensation effect obtained by using the oscillation frequency temperature compensation circuit in the patent of the present invention, and it can be seen that the deviation value of the oscillation frequency along with the temperature is 13MHz at the highest frequency of 6GHz of a single broadband voltage-controlled oscillator (the voltage-controlled gain is greater than 40 MHz); at the lowest oscillation frequency of 5.3GHz, the offset value of the oscillation frequency with temperature is 22 MHz. And better oscillation frequency temperature compensation is realized in all frequency bands.
The above implementation results show that: the low-phase noise voltage-controlled oscillator circuit with the oscillation frequency temperature compensation function has the characteristics of low phase noise and oscillation frequency temperature compensation. The method can be applied to a high-performance radio frequency phase-locked loop system.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (5)
1. A low phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation comprises a first NMOS tube (NM1, NM 2); the method is characterized in that: the first NMOS tube (NM1, NM2) and the second NMOS tube (NM2) are cross-coupled tubes, the drain electrode of the first NMOS tube (NM1) is connected with the grid electrode of the second NMOS tube (NM2), and the grid electrode of the first NMOS tube (NM1) is connected with the drain electrode of the second NMOS tube (NM 2); the source electrodes of the first NMOS transistor and the second NMOS transistor (NM1 and NM2) are respectively connected with the source electrodes of the first PMOS transistor and the second PMOS transistor (PM1 and PM2), so that partial noise of the NMOS transistor and the PMOS transistor is up-converted to be close to the resonant frequency; in order to realize complete feedback, a drain signal of the first NMOS transistor is connected to the ground through a fourth capacitor, a fourth inductor and a fourth resistor which are sequentially connected in series, a drain signal of the second NMOS transistor is connected to the ground through a third capacitor, a third inductor and a third resistor which are sequentially connected in series, a connection node of the fourth capacitor and the fourth inductor is connected to the grid electrode of the first PMOS transistor through a feedback signal line, and a connection node of the third capacitor and the third inductor is connected to the grid electrode of the second PMOS transistor through a feedback signal line.
2. A low phase noise voltage controlled oscillator circuit with oscillation frequency temperature compensation as claimed in claim 1, wherein: forming a resonant cavity by adopting a continuous tuning circuit with temperature compensation and a capacitor array circuit; the continuous tuning circuit with temperature compensation comprises a first capacitor, a second capacitor (C1, C2), a first varactor diode (CV1, CV2), a first inductor (L1), a second inductor (L2); one end of a first varactor (CV1) and one end of a second varactor (CV2) are connected, the other end of the first varactor (CV1) is connected with one end of a first capacitor (C1) and one end of a first inductor (L1), the other end of the second varactor (CV2) is connected with one end of a second capacitor (C2) and one end of a second inductor (L2), the other ends of the first inductor (L1) and the second inductor (L2) are grounded, the other end of the first capacitor (C1) is connected with the drain electrode of a first NMOS tube (NM1), and the other end of the second capacitor (C2) is connected with the drain electrode of a second NMOS tube (NM 2); the capacitor array circuit is connected between the drain of the first NMOS transistor (NM1) and the drain of the second NMOS transistor (NM 2).
3. A low phase noise voltage controlled oscillator circuit with oscillation frequency temperature compensation as claimed in claim 1, wherein: the continuous tuning circuit with temperature compensation further comprises a positive temperature voltage generation circuit, a third varactor diode (CV3), a fourth varactor diode (CV4), a third varactor diode (CV3) and a fourth varactor diode (CV4), wherein after the third varactor diode (CV3, CV4) are connected in series, one end of the third varactor diode (CV3) is connected to a connection node of the first varactor diode (CV1) and the first inductor (L1), and one end of the fourth varactor diode (CV4) is connected to a connection node of the second varactor diode (CV2) and the second inductor (L2); the voltage generated by the positive temperature voltage generation circuit is used for tuning the third variable capacitance diode and the fourth variable capacitance diode so as to realize the temperature compensation of the oscillation frequency of the voltage-controlled oscillator.
4. A low phase noise voltage controlled oscillator circuit with oscillation frequency temperature compensation as claimed in claim 3, wherein:
the positive temperature voltage generating circuit consists of a first diode, a second diode, a fifth resistor and a fifth capacitor; the first diode and the second diode are connected in series, the fifth resistor and the fifth capacitor are connected in parallel and then connected in series with the two diodes, and the connection node of the second diode, the fifth resistor and the fifth capacitor is connected to the connection node of the third varactor and the fourth varactor.
5. A low phase noise voltage controlled oscillator circuit with oscillation frequency temperature compensation as claimed in claim 2 or 3 or 4, characterized in that:
the capacitor array realizing circuit comprises a plurality of controllable capacitor switches, and all the controllable capacitor switches are connected in parallel; the circuit structure of each controllable capacitance switch is the same, and each controllable capacitance switch comprises a first resistor, a second resistor, a first capacitor, a second capacitor and a first NMOS transistor; one ends of the first resistor and the second resistor are connected together, and the other ends of the first resistor and the second resistor are respectively connected with the source electrode and the drain electrode of the first NMOS tube; one end of the capacitor I is connected with the source electrode of the MOS transistor I, and one end of the capacitor II is connected with the drain electrode of the MOS transistor I; the other ends of the first capacitor and the second capacitor are respectively connected with the drain electrode of the first NMOS transistor (NM1) and the drain electrode of the second NMOS transistor (NM 2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010908303.9A CN112054768B (en) | 2020-09-02 | 2020-09-02 | Low-phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010908303.9A CN112054768B (en) | 2020-09-02 | 2020-09-02 | Low-phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112054768A true CN112054768A (en) | 2020-12-08 |
| CN112054768B CN112054768B (en) | 2023-10-27 |
Family
ID=73606561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010908303.9A Active CN112054768B (en) | 2020-09-02 | 2020-09-02 | Low-phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112054768B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN113612445A (en) * | 2021-08-23 | 2021-11-05 | 北京北斗华大科技有限公司 | Temperature compensation LC voltage-controlled oscillator |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030228849A1 (en) * | 2002-06-06 | 2003-12-11 | International Business Machines Corporation | Dual frequency voltage controlled oscillator circuit |
| JP2006033803A (en) * | 2004-06-15 | 2006-02-02 | Matsushita Electric Ind Co Ltd | Voltage-controlled oscillator, and pll circuit and wireless communications apparatus using the same |
| CN101043199A (en) * | 2006-03-24 | 2007-09-26 | 苏州中科半导体集成技术研发中心有限公司 | Voltage controlled oscillator with automatic amplitude control |
| US20090115542A1 (en) * | 2005-11-07 | 2009-05-07 | Citizen Holdings Co., Ltd. | Temperature compensation oscillator and method for manufacturing the same |
| US20090128244A1 (en) * | 2007-11-15 | 2009-05-21 | National Taiwan University | Transistor voltage controlled oscillator |
| CN101488750A (en) * | 2009-02-20 | 2009-07-22 | 华为技术有限公司 | Method and apparatus for oscillation frequency compensation and phase lock loop circuit |
| CN101800542A (en) * | 2010-03-11 | 2010-08-11 | 复旦大学 | CMOS ultra-wideband prescaler |
| CN103107811A (en) * | 2012-12-07 | 2013-05-15 | 南京邮电大学 | Low phase noise inductance capacitance voltage-controlled oscillator |
| CN106603012A (en) * | 2016-12-09 | 2017-04-26 | 重庆西南集成电路设计有限责任公司 | Broadband temperature-compensation voltage-controlled oscillator, temperature compensation method and voltage generation circuit |
| CN107332514A (en) * | 2017-06-30 | 2017-11-07 | 西安电子科技大学 | A kind of push-push voltage controlled oscillator without varactor |
| CN107809236A (en) * | 2017-11-15 | 2018-03-16 | 中国科学技术大学 | A kind of inductance capacitance type voltage controlled oscillator with temperature-compensating |
| CN108199687A (en) * | 2018-01-16 | 2018-06-22 | 重庆西南集成电路设计有限责任公司 | Transconductance linearizing broadband LC types voltage controlled oscillator and tunable capacitor array circuit |
| CN109995324A (en) * | 2019-03-12 | 2019-07-09 | 东南大学 | A kind of LC voltage controlled oscillator that dynamic bias is adjusted |
| CN111541423A (en) * | 2020-04-26 | 2020-08-14 | 清华大学 | Low-phase-noise double-resonant-cavity noise filtering voltage-controlled oscillator |
-
2020
- 2020-09-02 CN CN202010908303.9A patent/CN112054768B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030228849A1 (en) * | 2002-06-06 | 2003-12-11 | International Business Machines Corporation | Dual frequency voltage controlled oscillator circuit |
| JP2006033803A (en) * | 2004-06-15 | 2006-02-02 | Matsushita Electric Ind Co Ltd | Voltage-controlled oscillator, and pll circuit and wireless communications apparatus using the same |
| US20090115542A1 (en) * | 2005-11-07 | 2009-05-07 | Citizen Holdings Co., Ltd. | Temperature compensation oscillator and method for manufacturing the same |
| CN101043199A (en) * | 2006-03-24 | 2007-09-26 | 苏州中科半导体集成技术研发中心有限公司 | Voltage controlled oscillator with automatic amplitude control |
| US20090128244A1 (en) * | 2007-11-15 | 2009-05-21 | National Taiwan University | Transistor voltage controlled oscillator |
| CN101488750A (en) * | 2009-02-20 | 2009-07-22 | 华为技术有限公司 | Method and apparatus for oscillation frequency compensation and phase lock loop circuit |
| CN101800542A (en) * | 2010-03-11 | 2010-08-11 | 复旦大学 | CMOS ultra-wideband prescaler |
| CN103107811A (en) * | 2012-12-07 | 2013-05-15 | 南京邮电大学 | Low phase noise inductance capacitance voltage-controlled oscillator |
| CN106603012A (en) * | 2016-12-09 | 2017-04-26 | 重庆西南集成电路设计有限责任公司 | Broadband temperature-compensation voltage-controlled oscillator, temperature compensation method and voltage generation circuit |
| CN107332514A (en) * | 2017-06-30 | 2017-11-07 | 西安电子科技大学 | A kind of push-push voltage controlled oscillator without varactor |
| CN107809236A (en) * | 2017-11-15 | 2018-03-16 | 中国科学技术大学 | A kind of inductance capacitance type voltage controlled oscillator with temperature-compensating |
| CN108199687A (en) * | 2018-01-16 | 2018-06-22 | 重庆西南集成电路设计有限责任公司 | Transconductance linearizing broadband LC types voltage controlled oscillator and tunable capacitor array circuit |
| CN109995324A (en) * | 2019-03-12 | 2019-07-09 | 东南大学 | A kind of LC voltage controlled oscillator that dynamic bias is adjusted |
| CN111541423A (en) * | 2020-04-26 | 2020-08-14 | 清华大学 | Low-phase-noise double-resonant-cavity noise filtering voltage-controlled oscillator |
Non-Patent Citations (2)
| Title |
|---|
| TRIPTI KACKAR: "Design of improved performance differential voltage controlled ring oscillator", 《2016 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, AND OPTIMIZATION TECHNIQUES (ICEEOT)》, pages 1 - 4 * |
| 唐欣: "应用于IMT-A和UWB系统的双频段开关电流源压控振荡器设计", 《东南大学学报(自然科学版)》, pages 473 - 477 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN112653411B (en) * | 2020-12-15 | 2022-08-19 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN113612445A (en) * | 2021-08-23 | 2021-11-05 | 北京北斗华大科技有限公司 | Temperature compensation LC voltage-controlled oscillator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112054768B (en) | 2023-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8294528B2 (en) | Wideband multi-mode VCO | |
| CN102332915A (en) | Subharmonic injection and locking voltage-controlled oscillator with wide locking range | |
| US9660578B2 (en) | Electronic device with capacitor bank linearization and a linearization method | |
| CN112054768B (en) | Low-phase noise voltage-controlled oscillator circuit with oscillation frequency temperature compensation | |
| Lai | Chip design of low consumption voltage-controlled oscillator with even harmonic mixer | |
| CN111342775B (en) | Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier | |
| Thakkar et al. | Techniques for improved continuous and discrete tuning range in millimeter-wave VCOs | |
| EP1831988B1 (en) | Differential oscillator device with pulsed power supply, and related driving method | |
| Wan et al. | A very low power quadrature VCO with modified current-reuse and back-gate coupling topology | |
| EP1543610B1 (en) | Lc oscillator | |
| US10826431B2 (en) | Differential voltage-controlled (VCO) oscillator | |
| CN116781014A (en) | Voltage controlled oscillator | |
| Saad et al. | A 5-Mw, 1.2–3.5-Ghz capacitive degeneration in LC-digitally-controlled oscillator for nano-satellite frequency synthesizers in 90-Nm CMOS | |
| US20040251977A1 (en) | Low-current, area-efficient and flicker noise free bias CMOS voltage control oscillator | |
| CN111147021B (en) | Voltage controlled oscillator | |
| Gaoding et al. | A fully integrated sub-GHz inductor-less VCO with a frequency doubler | |
| CN114900128A (en) | Voltage controlled oscillator | |
| Sadr et al. | A novel low phase noise and low power DCO in 90 nm CMOS technology for ADPLL application | |
| Saini et al. | An inductor-less LC-VCO for Ka band using 90nm CMOS | |
| Hao et al. | A Low-Noise High-Robust LC-VCO Based on 22nm FD-SOI Process | |
| Saad et al. | An L, S and S2 bands, compliant LC-based DCO for amateur Nano-satellite applications | |
| CN113507266B (en) | Terahertz voltage-controlled oscillator based on multiple oscillation cores | |
| CN117478067A (en) | Dual-mode W-band voltage-controlled oscillator based on transformer magnetic tuning | |
| Singh et al. | Design of low phase noise and wide tuning range voltage controlled oscillator for modern communication system | |
| Jeon | A differential Colpitts-VCO circuit suitable for sub-1V low phase noise operation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |