CN108199687A - Transconductance linearizing broadband LC types voltage controlled oscillator and tunable capacitor array circuit - Google Patents
Transconductance linearizing broadband LC types voltage controlled oscillator and tunable capacitor array circuit Download PDFInfo
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- CN108199687A CN108199687A CN201810039952.2A CN201810039952A CN108199687A CN 108199687 A CN108199687 A CN 108199687A CN 201810039952 A CN201810039952 A CN 201810039952A CN 108199687 A CN108199687 A CN 108199687A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0088—Reduction of noise
- H03B2200/009—Reduction of phase noise
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0092—Measures to linearise or reduce distortion of oscillator characteristics
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention discloses transconductance linearizing broadband LC types voltage controlled oscillator and tunable capacitor array circuits；A kind of transconductance linearizing broadband LC type voltage controlled oscillators, including LC oscillating circuits and tunable capacitor array circuit one；It is characterized in that：The LC oscillating circuits include PMOS tube one, PMOS tube two, three end differential inductances one and biasing circuit；The grid of the PMOS tube one is connected to the drain electrode of PMOS tube two by ac coupling capacitor one, and the grid of PMOS tube two is connected to the drain electrode of PMOS tube one by ac coupling capacitor two；Grid of the symmetrical both ends of three end differential inductances one respectively with the grid of PMOS tube one and PMOS tube two is connect, the centre tap end connection biasing circuit of three end differential inductances one；Tunable capacitor array circuit one and the symmetrical both ends of three end differential inductances one are connected in parallel；The present invention can be widely used in various high-frequency local oscillator phase-locked loop systems.
Description
Technical field
The present invention relates to LC type voltage controlled oscillators, and in particular to transconductance linearizing broadband LC types voltage controlled oscillator and adjustable electric
Hold array circuit.
Background technology
Voltage controlled oscillator is the important component for forming phaselocked loop, for providing local frequency, forms cycle of phase-locked loop.
Voltage controlled oscillator core part is usually made of active transconductance devices and resonant tank, and resonant tank is shaken by feeding back to be formed
It swings.Active transconductance device is then used for compensating the energy loss of resonant tank oscillation, so as to generate continual and steady oscillator signal.Pressure
Core of the oscillator as phaselocked loop to be controlled, plays a part of providing local frequency, frequency of oscillation controls voltage directly proportional to it,
To expand its frequency adjustable extent, also usually increase capacitor array.Voltage controlled oscillator usually requires that frequency stability is good, control spirit
Sensitivity is high, and tuning range is wide, and frequency deviation is linear with control voltage and is suitable for integrated etc..And due to the distal end phase of phaselocked loop
Position noise is mainly determined by voltage controlled oscillator, so the phase noise requirements to voltage controlled oscillator are also further stringent.By inductance and
The LC type phase noise of voltage controlled oscillator performances that capacitance forms resonant tank are better than ring oscillator, in high performance communication system
It is widely used in system general.
The phase noise for promoting LC type voltage controlled oscillators usually requires increase oscillation amplitude and reduces active device itself
Intrinsic noise.Traditional LC types voltage controlled oscillator is usually by the grid of MOS device and drain electrode cross-couplings to form active transconductance
Device, since the oscillator signal amplitude of oscillation of LC type voltage controlled oscillators is generally near even more than supply voltage, this causes in big signal
Under operating condition, within the frequency of oscillation period, the nearly half period of MOS device is all operated in triode region, and it is non-thread to show mutual conductance
Property characteristic, can not obtain preferable phase noise characteristic.
Invention content
The technical problems to be solved by the invention are to provide transconductance linearizing broadband LC types voltage controlled oscillator and adjustable electric
Hold array circuit.
In order to solve the above-mentioned technical problem, of the invention first technical solution is the present invention：
A kind of transconductance linearizing broadband LC type voltage controlled oscillators, including LC oscillating circuits and tunable capacitor array circuit one；
The LC oscillating circuits are used to generate oscillator signal；It is characterized in that：
The LC oscillating circuits include PMOS tube one, PMOS tube two, three end differential inductances one and biasing circuit；
The grid of the PMOS tube one is connected to the drain electrode of PMOS tube two after carrying out blocking by ac coupling capacitor one,
The grid of PMOS tube two is connected to the drain electrode of PMOS tube one after carrying out blocking by ac coupling capacitor two；Three end differential inductances one
Grid of the symmetrical both ends respectively with the grid of PMOS tube one and PMOS tube two connect, the centre tap end of three end differential inductances one
Connect biasing circuit；Tunable capacitor array circuit one and the symmetrical both ends of three end differential inductances one are connected in parallel.
The LC oscillating circuits are for generating continual and steady oscillator signal, in order to realize that active transconductance device transconductance is linear
Change, employ ac coupling capacitor and separate the grid of PMOS tube one and PMOS tube two and drain electrode, and by the humorous of LC oscillating circuits
The circuit that shakes moves to MOS device grid from traditional MOS device drain electrode；In order to which the grid of MOS device is given to provide necessary biased electrical
Pressure, the inductance of the resonant tank of LC oscillating circuits employ three end differential inductances, and the symmetrical both ends port of three end differential inductances is horizontal
Across between the grid of MOS device, the intermediate tap port of differential inductance connects bias voltage, to ensure the normal work of MOS device.
Due to ac coupling capacitor, so as to which MOS device grid is given to provide the biased electrical less than its drain voltage
Pressure, in the case of alternate current operation, using the smaller ac coupling capacitor of capacitance, the oscillation amplitude that MOS device can be made to drain
Less than the oscillation amplitude of MOS device grid, enter three poles so as to during frequency of oscillation, substantially reduce MOS device work
The time in area under control so as to inhibit the nonlinear characteristic of MOS device, realizes that MOS device is transconductance linearizing.
Meanwhile come from the noise of MOS device in itself and also inhibited：In oscillator signal zero crossing, due at this time
The phase noise sensitivity highest of oscillator, device noise voltage relationship proportional to its mutual conductance, when by the humorous of LC oscillating circuits
Circuit shake after traditional MOS device drain electrode moves to MOS device grid, effective mutual conductance on resonant tank is than MOS device sheet
The mutual conductance of body is small, and therefore, in oscillator signal zero crossing, MOS device noise has obtained effective inhibition.
Simultaneously as the grid to MOS device provides bias voltage less than drain voltage, avoid MOS device into
Enter triode region, this reduce the declines of Q of resonance circuit value, compared with traditional direct-coupling structure, can provide bigger
Oscillation amplitude, while reduce other noises of injection resonant tank.Voltage controlled oscillator is ensured using tunable capacitor array simultaneously
Frequency coverage.
The preferred embodiment of transconductance linearizing broadband LC type voltage controlled oscillators according to the present invention, the LC oscillating circuits are also
Including three end differential inductances two, voltage controlled variable capacitance three, four and tunable capacitor array circuit two；Three end differential inductances two
Symmetrical both ends are connect respectively with the drain electrode of PMOS tube one and the drain electrode of PMOS tube two, the centre tap termination of three end differential inductances two
Ground；The negative terminal of voltage controlled variable capacitance three, four connects external control port simultaneously, and voltage controlled variable capacitance three, four is just
End is connect respectively with the drain electrode of PMOS tube one and the drain electrode of PMOS tube two；Two and three end differential inductance two of tunable capacitor array circuit
Symmetrical both ends be connected in parallel.
The preferred embodiment of transconductance linearizing broadband LC type voltage controlled oscillators according to the present invention, the tunable capacitor battle array
Column circuits one include 2NA tunable capacitor array subelement；N takes >=1 positive integer.
The preferred embodiment of transconductance linearizing broadband LC type voltage controlled oscillators according to the present invention, the tunable capacitor battle array
Row subelement is made of capacitance eight, nine, phase inverter one, two, NMOS tube three and resistance one, two, three；One end of capacitance eight and electricity
The one end for holding nine connects the symmetrical both ends of three end differential inductances one respectively, another drain electrode for terminating to NMOS tube three of capacitance eight,
Another source electrode for terminating to NMOS tube three of capacitance nine；The input terminal of phase inverter one receives external digital control signal, phase inverter
One output signal is the input signal of phase inverter two, while the output signal of phase inverter one is NMOS tube three by resistance one
Grid provides control signal, and the output signal of phase inverter two is carried respectively by drain electrode of the resistance two, three for NMOS tube three and source electrode
For controlling signal.
The preferred embodiment of transconductance linearizing broadband LC type voltage controlled oscillators according to the present invention, the biasing circuit packet
Include bias inductors and partially installing capacitor；Bias inductors are connected in parallel with partially installing capacitor, one end ground connection of sys node, sys node
The other end is connect as bias voltage output with the centre tap end of three end differential inductances one.
The preferred embodiment of transconductance linearizing broadband LC type voltage controlled oscillators according to the present invention, the LC oscillating circuits are also
Including inductance three, a termination power of the inductance three, the other end is connect simultaneously with the source electrode of PMOS tube one, PMOS tube two.
Second technical solution of the present invention is a kind of tunable capacitor array circuit for forming voltage controlled oscillator, feature
It is：The tunable capacitor array circuit includes 2NA tunable capacitor array subelement；N takes >=1 positive integer；The tunable capacitor
Array subelement is made of capacitance eight, nine, phase inverter one, two, NMOS tube three and resistance one, two, three；One end of capacitance eight and
One end of capacitance nine connects the symmetrical both ends of corresponding three end differential inductance respectively, another NMOS tube three that terminates to of capacitance eight
Drain electrode；Another source electrode for terminating to NMOS tube three of capacitance nine；The input terminal of phase inverter one receives the digital control letter of external input
Number, the output signal of phase inverter one is the input signal of phase inverter two, while the output signal of phase inverter one is by resistance one
The grid of NMOS tube three provides control signal, and the output signal of phase inverter two passes through leakage of the resistance two, three for NMOS tube three respectively
Pole and source electrode provide control signal.
The advantageous effect of transconductance linearizing broadband LC type voltage controlled oscillators of the present invention is：The present invention is by using friendship
It flows coupled capacitor to separate the grid of MOS device and drain electrode, and the resonant tank of LC oscillating circuits is leaked from traditional MOS device
Ghandler motion realizes that MOS device is transconductance linearizing to MOS device grid, optimizes the phase noise characteristic of LC type voltage controlled oscillators；
The discrete control to frequency of oscillation is realized using tunable capacitor array circuit simultaneously, extends the oscillation of LC type voltage controlled oscillators
Frequency range；It is of the invention compared with traditional LC type voltage controlled oscillators, have working frequency height, wide frequency range, phase noise
Low advantage can be widely used in various high-frequency local oscillator phase-locked loop systems.
Description of the drawings
Fig. 1 is transconductance linearizing broadband LC types voltage controlled oscillator structure chart.
Fig. 2 is the circuit diagram of biasing circuit.
Fig. 3 is the circuit diagram of tunable capacitor array circuit.
Fig. 4 is the circuit diagram of tunable capacitor array circuit subelement.
Fig. 5 is transconductance linearizing broadband LC type voltage controlled oscillator mutual conductances with oscillation amplitude change curve.
Fig. 6 is transconductance linearizing broadband LC types voltage controlled oscillator outputting oscillation signal curve graph.
Fig. 7 is phase noise curve graph under transconductance linearizing broadband LC types voltage controlled oscillator 7GHz frequencies of oscillation.
Fig. 8 is transconductance linearizing broadband LC types voltage controlled oscillator surge frequency range curve graph.
Specific embodiment
Referring to Fig. 1 to Fig. 4, a kind of transconductance linearizing broadband LC type voltage controlled oscillators, including LC oscillating circuits and adjustable electric
Hold array circuit one；The LC oscillating circuits are used to generate oscillator signal；The LC oscillating circuits are by active transconductance device and resonance
Circuit is formed, and resonant tank forms oscillation by feeding back.Active transconductance device is then used for compensating the energy damage of resonant tank oscillation
It loses, so as to generate continual and steady oscillator signal.
Specially：The LC oscillating circuits include PMOS tube MP1, PMOS tube MP2, three end differential inductance L1, three end differential electricals
Feel L2, inductance L3, biasing circuit, voltage controlled variable capacitance C3, C4, capacitance C5, C6 and tunable capacitor array circuit two；
The grid of the PMOS tube MP1 is connected to the drain electrode of PMOS tube MP2 after carrying out blocking by ac coupling capacitor C1,
The grid of PMOS tube MP2 is connected to the drain electrode of PMOS tube MP1 after carrying out blocking by ac coupling capacitor C2；Three end differential inductances
Grid of the left and right symmetrical both ends of L1 respectively with the grid of PMOS tube MP1 and PMOS tube MP2 is connect, three end differential inductance L1's
Centre tap end connects biasing circuit；Tunable capacitor array circuit one is in parallel with the left and right symmetrical both ends of three end differential inductance L1
Connection.
The left and right symmetrical both ends of three end differential inductance L2 connect respectively with the drain electrode of PMOS tube MP1 and the drain electrode of PMOS tube MP2
It connects, the centre tap end ground connection of three end differential inductance L2；The negative terminal of voltage controlled variable capacitance C3, C4 connect external control simultaneously
Port, the anode of voltage controlled variable capacitance C3, C4 are connect respectively with the drain electrode of PMOS tube MP1 and the drain electrode of PMOS tube MP2；It can
Capacitor array circuit two and the left and right symmetrical both ends of three end differential inductance L2 is adjusted to be connected in parallel.
The power supply for just terminating transconductance linearizing broadband LC type voltage controlled oscillators of inductance L3, the negative terminal of inductance L3 connect PMOS tube
The source electrode of MP1, MP2.Inductance L3 forms the tail inductance from power supply to PMOS tube MP1, MP2, and voltage controlled oscillator can be inhibited humorous
It shakes the higher hamonic wave of chamber, can also decay the noise from power supply.PMOS tube MP1, MP2 forms active transconductance device, inductance L3
The source electrode of negative terminal connection PMOS tube MP1 and PMOS tube MP2 be powered, the grid of PMOS tube MP1 by capacitance C1 carry out every
The drain electrode of PMOS tube MP2 is connected to after straight, the grid of PMOS tube MP2 after capacitance C2 progress blockings by being connected to PMOS tube MP1
Drain electrode, so as to formed grid with drain electrode cross-couplings.Meanwhile the grid of PMOS tube MP1 and PMOS tube MP2 are coupled with three
The left and right symmetrical both ends of differential inductance L1 are held, the intermediate tap port of three end differential inductance L1 is connected to biasing circuit, must with offer
The bias voltage needed, generates corresponding bias current.When LC oscillators vibrate, since the resistance in resonant tank can produce
Raw energy loss, oscillator signal can gradually decay, and the active transconductance device that PMOS tube MP1, MP2 is formed at this time can be returned to resonance
Injection Current in road, so as to form continual and steady oscillator signal.
Three its symmetrical both ends of end differential inductance L1 are across between the grid of MOS device, the centre of three end differential inductance L1
Tap terminates biasing circuit, and bias voltage is provided to the grid of PMOS tube MP1 and MP2.Three end differential inductance L1 and tunable capacitor
Array circuit one forms inductance capacitance parallel-connection structure, resonant tank one is formed, for generating high-frequency sine wave signal.It is former
It manages as the energy storage characteristic using inductance capacitance, two kinds of energy of electromagnetism is allowed alternately to convert, that is, form the alternating fluctuation of electric energy and magnetic energy,
So as to form oscillation.
Three end differential inductance L2 and tunable capacitor array circuit two form resonant tank two, wherein three end differential inductance L2
Left and right symmetrical both ends are across between the drain electrode of MOS device, and the centre tap of differential inductance terminates to ground, so as to be formed from electricity
Source can provide operating current to the current path on ground for PMOS tube MP1, MP2.Tunable capacitor array circuit two is across in MOS
Between the drain electrode of device.Three end differential inductance L2 and tunable capacitor array circuit two form inductance capacitance parallel-connection structure, form resonance
Circuit two, for generating high-frequency sine wave signal.The resonant tank two is parallel relationship with resonant tank one, and final is humorous
Vibration frequency will be that parallel connection is calculated respectively for three end differential inductance L1, L2 and two tunable capacitor array circuits.
The drain electrode for just terminating to PMOS tube MP1 of voltage controlled variable capacitance C3, the anode of voltage controlled variable capacitance C4
The drain electrode of PMOS tube MP2 is connected to, the negative terminal of voltage controlled variable capacitance C3, C4 are connected to external control port, when outside controls
During the control voltage vtune consecutive variations that port provides, the voltage difference at voltage controlled variable capacitance C3, C4 both ends changes therewith,
The then capacitance of voltage controlled variable capacitance C3, C4 also correspondingly consecutive variations, so as to change the frequency of oscillation of voltage controlled oscillator.Shape
Continuous control into external control port to oscillator frequency of oscillation.
In the present invention, the surge frequency range LC types that tunable capacitor array circuit is used to extend LC type voltage controlled oscillators are voltage-controlled
The frequency of oscillation of oscillator is determined by following formula：
Wherein f is frequency of oscillation, and L is the effective inductance value in LC type voltage controlled oscillator resonant tanks, and C, which is that LC types are voltage-controlled, to shake
Swing the effective capacitance value in device resonant tank.Since inductance L is usually fixed in LC type voltage controlled oscillators, in order to realize that frequency can
It adjusts, the value of capacitance C is adjusted by voltage-controlled variable capacitance using capacitance, so as to be provided by external control port
Control voltage vtune realize the continuous control of frequency of oscillation, but the capacitance variations of variable capacitance are limited in scope, in order to realize more
The frequency of oscillation of wide scope, while the discrete control to frequency of oscillation is realized using tunable capacitor array circuit.By oscillation frequency
The discrete control of rate is combined the continuous control of frequency of oscillation with the control voltage vtune that control port provides, and can realize
The wide frequency of oscillation covering of LC oscillators.
The drain electrode of PMOS tube MP1 and the drain electrode of PMOS tube MP2 connect output port by ac coupling capacitor C5, C6 respectively
OUTP, OUTN, the oscillator signal output port of OUTP, OUTN, that is, voltage controlled oscillator.Ac coupling capacitor C5, C6, which can be formed, to shake
Swing the dc point that exchanges blocking, suitable its work convenient for post-stage drive circuit is provided of the device with post-stage drive circuit.
The biasing circuit is made of bias inductors L4 and partially installing capacitor C7, the anode of bias inductors L4 and partially installing capacitor C7
Anode link together, connect as bias voltage output VBIAS, and with the centre tap end of three end differential inductances, one L1
It connects.The negative terminal of bias inductors L4 and the negative terminal of partially installing capacitor C7 link together and pull down to ground.In the present solution, having due to forming
The metal-oxide-semiconductor of source transconductance devices is PMOS tube, according to the principle of transconductance linearizing technology, needs to set metal-oxide-semiconductor gate bias voltage
It is set to less than its drain voltage, therefore can PMOS tube grid be directly pulled down to by ground potential by bias inductors L4, that is, biases
Voltage is zero.So as to which PMOS tube be avoided to enter triode region when working, realize that PMOS tube is transconductance linearizing.Bias inductors L4 can be with
Regarding as has larger AC impedance, the resistance of smaller DC impedance, not only provides zero-bias voltage, but also can reduce resonant tank energy
Measure the leakage to ground.Partially installing capacitor C7 and bias inductors L4 collectively forms LC filter structures, can be used for reducing ground potential noise
It is injected into resonant tank.
The tunable capacitor array circuit one, two includes 2NA tunable capacitor array subelement；N takes >=1 positive integer.
In a particular embodiment, the tunable capacitor array circuit can be by 64 identical tunable capacitor array subelement structures
Into, wherein 1 make it is spare.The control of capacitance size switching, digital control approach two are carried out using the digital control position of 6
System weight controls capacitor array, surge frequency range is divided into 26 totally 64 subsegments, the cline frequency covering between adjacent sub-section
Continuous tuning is realized by the control voltage vtune for continuously changing voltage controlled variable capacitance C3 and C4 in Fig. 1.Each digit
The number of the subelement of word control code control is respectively 1,2,4,8,32, is using the reason of this structure：Oscillating circuit
Working frequency is higher, and minimum parasitism all can generate large effect to frequency of oscillation, maintain the uniformity of each frequency band spacing
It can seem difficult.And capacitor array is formed using same subunit, the inhomogeneities of parasitic parameter can be reduced, so as into
When row is digital control, the frequency variation of uniformly continuous is formed.
The tunable capacitor array subelement by capacitance C8, C9, phase inverter one, two, NMOS tube MN3 and resistance R1, R2,
R3 is formed；One end of capacitance C8 and one end of capacitance C9 connect the left and right symmetrical both ends of three end differential inductances respectively, i.e., if
Form tunable capacitor array circuit one, one end of capacitance C8 and one end of capacitance C9 connect respectively three end differential inductance L1 a left side,
Right symmetrical both ends, if forming tunable capacitor array circuit two, one end of capacitance C8 and one end of capacitance C9 connect three respectively
Hold the left and right symmetrical both ends of differential inductance L2, another drain electrode for terminating to NMOS tube MN3 of capacitance C8；The other end of capacitance C9
It is connected to the source electrode of NMOS tube MN3；The input terminal of phase inverter 1 receives external digital control code, the output signal of phase inverter 1
Ctrl1 is the input signal of phase inverter 2 12, while the output signal ctrl2 of phase inverter 1 is NMOS tube by resistance R1
The grid of MN3 provides control signal, and the output signal of phase inverter 2 12 passes through the drain electrode of resistance R2, R3 for NMOS tube MN3 respectively
Control signal is provided with source electrode.Ctrl1 and ctrl2 is the opposite control signal of two logic levels.Capacitance C8, C9 are usually by essence
The higher metal capacitance of degree is formed.
In a particular embodiment, phase inverter 1 is made of NMOS tube MN1 and PMOS tube MP3, and phase inverter 2 12 is by NMOS
Pipe MN2 and PMOS tube MP4 is formed.When it is 0 to input digital controlled signal in logic levels, ctrl1 signal logics level is 1,
Ctrl2 signal logics level is 0, and NMOS tube MN3 gate source voltages are more than threshold voltage, and NMOS tube MN3 is opened, capacitance C8, C9 quilt
Resonant tank is accessed, resonant frequency reduces.When it is 1 to input digital controlled signal in logic levels, ctrl1 signal logic level
It is 1 for 0, ctrl2 signal logics level, NMOS tube MN3 gate source voltages are negative, and NMOS tube MN3 is closed, and capacitance C8, C9 are from resonance
It is disconnected in circuit, resonant frequency raising.
Referring to Fig. 3 and Fig. 4, a kind of tunable capacitor array circuit for forming voltage controlled oscillator, the tunable capacitor array circuit
Including 2NA tunable capacitor array subelement；N takes >=1 positive integer；The tunable capacitor array subelement by capacitance C8, C9,
Phase inverter one, two, NMOS tube MN3 and resistance R1, R2, R3 are formed；The input terminal of phase inverter 1 receives external input number
Control signal, the output signal ctrl1 of phase inverter 1 is the input signal of phase inverter 2 12, while the output of phase inverter 1
Signal ctrl2 provides control signal by resistance R1 for the grid of NMOS tube MN3, and the output signal of phase inverter 2 12 passes through respectively
The drain electrode and source electrode of resistance R2, R3 for NMOS tube MN3 provide control signal.Ctrl1 and ctrl2 is that two logic levels are opposite
Control signal.One end of capacitance C8 and one end of capacitance C9 connect the symmetrical both ends of corresponding three end differential inductance respectively, i.e., such as
Fruit is to form tunable capacitor array circuit one, and one end of capacitance C8 and one end of capacitance C9 connect three end differential inductance L1's respectively
Symmetrical both ends, if forming tunable capacitor array circuit two, one end of capacitance C8 and one end of capacitance C9 connect three ends respectively
The symmetrical both ends of differential inductance L2, another drain electrode for terminating to NMOS tube MN3 of capacitance C8；The another of capacitance C9 terminates to NMOS
The source electrode of pipe MN3；Capacitance C8, C9 are usually made of the higher metal capacitance of precision.
In a particular embodiment, phase inverter 1 is made of NMOS tube MN1 and PMOS tube MP3, and phase inverter 2 12 is by NMOS
Pipe MN2 and PMOS tube MP4 is formed.When external input digital controlled signal in logic levels are 0, ctrl1 signal logic level
It is 0 for 1, ctrl2 signal logics level, NMOS tube MN3 gate source voltages are more than threshold voltage, and NMOS tube MN3 is opened, capacitance C8,
C9 is reduced by access resonant tank, resonant frequency.When it is 1 to input digital controlled signal in logic levels, ctrl1 signal logics
It is 1 that level, which is 0, ctrl2 signal logics level, and NMOS tube MN3 gate source voltages be negative, NMOS tube MN3 closings, capacitance C8, C9 from
It is disconnected in resonant tank, resonant frequency raising.
Transconductance linearizing broadband LC types voltage controlled oscillator improvement such as Fig. 5 transconductance linearizing to active MOS device, it is horizontal
Axis is MOS device grid voltage, and the longitudinal axis is mutual conductance, and three curves are respectively conventional LC type voltage controlled oscillator mutual conductance with oscillation in figure
Amplitude change curve, transconductance linearizing broadband LC type voltage controlled oscillator mutual conductances are with oscillation amplitude change curve and transconductance linearizing width
The band effective mutual conductance of LC type voltage controlled oscillator resonators is with oscillation amplitude change curve.As seen from Figure 5, when using traditional
The directly cross-linked scheme formula of MOS device grid leak, with the increasing of MOS device grid voltage, the mutual conductance of MOS device constantly subtracts
It is small, so that the mutual conductance of MOS device integrally shows larger nonlinear characteristic within a cycle of oscillation.And using mutual conductance
Linearisation broadband LC types voltage controlled oscillator can realize that active MOS device is transconductance linearizing.
Transconductance linearizing broadband LC types voltage controlled oscillator outputting oscillation signal curve as shown in fig. 6, horizontal axis be the time, the longitudinal axis
For voltage.As seen from Figure 6, it is defeated can to form the oscillation of high-frequency sinusoidal signal for transconductance linearizing broadband LC types voltage controlled oscillator
Go out.
For transconductance linearizing broadband LC type phase noise of voltage controlled oscillator curves as shown in fig. 7, horizontal axis is frequency, the longitudinal axis is work(
Rate is composed.Under 7.3GHz frequencies of oscillation, at transconductance linearizing broadband LC types voltage controlled oscillator 100KHz frequency deviations phase noise reach-
Phase noise reaches -128dBc/Hz at 108dBc/Hz, 1MHz frequency deviation, as seen from Figure 7, transconductance linearizing broadband LC type pressures
Controlling oscillator has good phase noise characteristic.
Transconductance linearizing broadband LC types voltage controlled oscillator surge frequency range curve as shown in figure 8, horizontal axis be subsegment digit,
The longitudinal axis is frequency.Transconductance linearizing broadband LC types voltage controlled oscillator can cover 5.4GHz in the case where 64 cross-talk sections cover
~7.3GHz frequency ranges, frequency tuning ratio have reached 26%.As seen from Figure 8, transconductance linearizing broadband LC types are voltage-controlled
Oscillator can realize that wideband frequency covers.
Result of implementation above shows：A kind of transconductance linearizing broadband LC types voltage controlled oscillator of the present invention has oscillation frequency
The features such as rate is high, wide frequency range, phase noise is low.The technology of the present invention can be widely used in various high-frequency local oscillator phaselocked loops
In system.
Claims (7)
1. a kind of transconductance linearizing broadband LC type voltage controlled oscillators, including LC oscillating circuits and tunable capacitor array circuit one；Institute
LC oscillating circuits are stated for generating oscillator signal；It is characterized in that：
The LC oscillating circuits include PMOS tube one (MP1), PMOS tube two (MP2), three end differential inductances one (L1) and biasing circuit；
The grid of the PMOS tube one (MP1) is connected to the drain electrode of PMOS tube two (MP2) by ac coupling capacitor one (C1),
The grid of PMOS tube two (MP2) is connected to the drain electrode of PMOS tube one (MP1) by ac coupling capacitor two (C2)；Three end differential electricals
Feel grid of the symmetrical both ends of one (L1) respectively with the grid of PMOS tube one (MP1) and PMOS tube two (MP2) to connect, three end difference
The centre tap end connection biasing circuit of inductance one (L1)；Pair of one and three end differential inductance one (L1) of tunable capacitor array circuit
Both ends is claimed to be connected in parallel.
2. transconductance linearizing broadband LC type voltage controlled oscillators according to claim 1, it is characterised in that：The LC oscillating circuits
Further include three end differential inductances two (L2), voltage controlled variable capacitance three, four and tunable capacitor array circuit two；Three end differential electricals
The symmetrical both ends of two (L2) of sense are connect respectively with the drain electrode of PMOS tube one (MP1) and the drain electrode of PMOS tube two (MP2), three end difference
The centre tap end ground connection of inductance two (L2)；The negative terminal of voltage controlled variable capacitance three, four connects external control port simultaneously, electricity
The anode of voltage-controlled variable capacitance processed three, four is connect respectively with the drain electrode of PMOS tube one (MP1) and the drain electrode of PMOS tube two (MP2)；
Tunable capacitor array circuit two and the symmetrical both ends of three end differential inductances two (L2) are connected in parallel.
3. transconductance linearizing broadband LC type voltage controlled oscillators according to claim 1 or 2, it is characterised in that：It is described adjustable
Capacitor array circuit one includes 2NA tunable capacitor array subelement；N takes >=1 positive integer.
4. transconductance linearizing broadband LC type voltage controlled oscillators according to claim 3, it is characterised in that：The tunable capacitor
Array subelement is made of capacitance eight, nine, phase inverter one (11), phase inverter two (12), NMOS tube three and resistance one, two, three；
One end of capacitance eight and one end of capacitance nine connect the symmetrical both ends of three end differential inductances one (L1), the other end of capacitance eight respectively
It is connected to the drain electrode of NMOS tube three, another source electrode for terminating to NMOS tube three of capacitance nine；The input terminal of phase inverter one (11) receives
External digital controls signal, and the output signal of phase inverter one (11) is the input signal of phase inverter two (12), while phase inverter one
(11) output signal provides control signal, the output signal point of phase inverter two (12) by resistance one for the grid of NMOS tube three
Control signal is not provided by drain electrode and source electrode of the resistance two, three for NMOS tube three.
5. transconductance linearizing broadband LC type voltage controlled oscillators according to claim 4, it is characterised in that：The biasing circuit
Including bias inductors and partially installing capacitor；Bias inductors are connected in parallel with partially installing capacitor, one end ground connection of sys node, sys node
The other end connect as bias voltage output with the centre tap end of three end differential inductances one (L1).
6. transconductance linearizing broadband LC type voltage controlled oscillators according to claim 1 or 2, it is characterised in that：The LC vibrates
Circuit further includes inductance three, a termination power of the inductance three, the other end while the source with PMOS tube one (MP1), PMOS tube two
Pole connects.
7. a kind of tunable capacitor array circuit for forming voltage controlled oscillator, it is characterised in that：The tunable capacitor array circuit includes 2N
A tunable capacitor array subelement；N takes >=1 positive integer；The tunable capacitor array subelement is by capacitance eight, nine, phase inverter
First, two, NMOS tube three and resistance one, two, three are formed；One end of capacitance eight and one end of capacitance nine connect corresponding three respectively
The symmetrical both ends of differential inductance, another drain electrode for terminating to NMOS tube three of capacitance eight are held, the another of capacitance nine terminates to NMOS
The source electrode of pipe three；The input terminal of phase inverter one (11) receives external digital control signal, and the output signal of phase inverter one (11) is
The input signal of phase inverter two (12), while the output signal of phase inverter one (11) is carried by grid of the resistance one for NMOS tube three
For controlling signal, the output signal of phase inverter two (12) is provided respectively by drain electrode and source electrode of the resistance two, three for NMOS tube three
Control signal.
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