CN112053975A - Bonding disc for wafer bonding and wafer bonding device - Google Patents
Bonding disc for wafer bonding and wafer bonding device Download PDFInfo
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- CN112053975A CN112053975A CN202010956483.8A CN202010956483A CN112053975A CN 112053975 A CN112053975 A CN 112053975A CN 202010956483 A CN202010956483 A CN 202010956483A CN 112053975 A CN112053975 A CN 112053975A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
The invention discloses a bonding disc for wafer bonding and a wafer bonding device, and belongs to the field of semiconductor wafer processing. The bonding pad for wafer bonding comprises a pressure plate, a graphite layer, a heating plate, a cooling plate and a heat insulation layer in sequence from the inner side to the outer side, the heat insulation layer comprises a reflecting screen and a substrate, the substrate is arranged on the outer side of the reflecting screen, and a cooling medium circulation channel is arranged in the substrate. The invention can uniformly transmit the heat of the heating plate to the pressing plate through the graphite layer, and can compensate the parallelism error of the upper pressing plate and the lower pressing plate. Through the fine volume conduction to parts such as connecting piece that prevents heating plate heat of insulating layer including reflecting screen and base plate, thermal-insulated effectual, heating plate heating efficiency is high, and the influence is less when base plate cooling effect heats the heating plate. In addition, the invention has simple structure.
Description
Technical Field
The present invention relates to the field of semiconductor wafer processing, and more particularly, to a bonding pad for wafer bonding and a wafer bonding apparatus.
Background
As the application field of the wafer bonding technology becomes wider, the temperature gradually becomes one of the bottlenecks in the development of the wafer bonding technology. The wafer bonding process comprises fusion, anodic bonding, metal bonding, polymer adhesive bonding and the like, wherein two wafers are required to be heated in the wafer bonding mode, so that dielectric layers on the surfaces of the wafers are fused or diffused with each other, and the two wafers are pressed together.
A bond pad for wafer bonding in the prior art is composed of a heating plate, a cooling plate and a pressing plate. The wafer bonding device uses an upper set of bonding pads and a lower set of bonding pads, and the upper bonding pads and the lower bonding pads are symmetrically arranged. For the following example of a bond pad, the heater plate is mounted on a cooling plate and the platen is mounted on the heater plate. The structure of the upper bonding pad is symmetrical to that of the lower bonding pad. The upper and lower wafers are placed on a platen of a bond pad, the lower bond pad heats the lower wafer and provides support, and the upper bond pad heats the upper wafer and provides bonding pressure.
In the heating process of the bonding disc in the prior art, the temperature of the heating disc is easily transmitted to the connecting piece of the heating disc and the vacuum cavity. When the heating plate temperature reaches 550 ℃ high temperature of bonding temperature, the temperature conducted to the vacuum cavity can be very high, parts such as vacuum elements and sealing elements can be directly damaged, and the risk of scalding when personnel touch the high-temperature vacuum cavity is avoided.
Disclosure of Invention
In order to solve the technical problems, the invention provides a bonding pad for wafer bonding and a wafer bonding device.
The technical scheme provided by the invention is as follows:
the utility model provides a bonding pad for wafer bonding, a bonding pad for wafer bonding includes pressure disk, graphite layer, heating plate, cooling plate and insulating layer from inboard to the outside in proper order, the insulating layer includes reflecting screen and base plate, the base plate sets up the outside at the reflecting screen, be provided with cooling medium circulation channel in the base plate.
Further, the heating plate and the pressing plate are connected through an elastic connecting piece.
Furthermore, the elastic connecting piece is a spring hook.
Further, the heating plate comprises a heating plate base body and a heating element arranged on the heating plate base body, and the density of the heating element at the center of the heating plate base body is larger than that of the heating element at the edge.
Further, the heating plate substrate comprises an inner circular heating zone and an outer circular heating zone, the density of the heating elements of the outer circular heating zone is greater than that of the heating elements of the inner circular heating zone, and the heating elements of the inner circular heating zone and the heating elements of the outer circular heating zone are respectively and independently controlled.
Further, heating plate and cooling plate structure as an organic whole, be provided with coolant circulating line in the heating plate base member, form the cooling plate, coolant circulating line is connected with the outside pipeline that provides coolant.
Furthermore, the cooling medium circulation pipeline and the external pipeline are the same pipeline of an integrated structure, and the cooling medium circulation pipeline is arranged in the heating disc base body in a casting and pressing mode.
Furthermore, the reflecting screens are multilayer, and two adjacent reflecting screens are isolated by a cylindrical block.
Furthermore, the number of layers of the reflecting screen is 3-5, a temperature sensor is arranged on the substrate, the pressure plate and the heating plate are made of ceramic or stainless steel, the thickness of the graphite layer is 2-5 mm, and the flatness of the inner surface of the pressure plate is 2-4 microns.
A wafer bonding device comprises the bonding disc for wafer bonding.
The invention has the following beneficial effects:
the bonding plate for wafer bonding of the invention can uniformly conduct the heat of the heating plate to the pressing plate through the graphite layer, and can compensate the parallelism error of the upper pressing plate and the lower pressing plate. Through the fine volume conduction to parts such as connecting piece that prevents heating plate heat of insulating layer including reflecting screen and base plate, thermal-insulated effectual, heating plate heating efficiency is high, and the influence is less when base plate cooling effect heats the heating plate. In addition, the invention has simple structure.
Drawings
FIG. 1 is a schematic diagram of an external structure of a bonding pad for wafer bonding according to the present invention;
FIG. 2 is a cross-sectional view of a bond pad for wafer bonding in accordance with the present invention;
FIG. 3 is a top view of a bond pad for wafer bonding according to the present invention;
FIG. 4 is a schematic view of a heating and cooling plate;
fig. 5 is a schematic view of a wafer bonding apparatus according to the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
An embodiment of the present invention provides a bonding pad 100 for wafer bonding, as shown in fig. 1 to 4, the bonding pad 100 includes, in order from inside to outside, a pressure plate 110, a graphite layer 120, a heating plate 130, a cooling plate 140, and a thermal insulation layer 150, the thermal insulation layer 150 includes a reflection screen 151 and a substrate 152, the substrate 152 is disposed on the outside of the reflection screen 151, and a cooling medium circulation channel is disposed in the substrate 152.
When the bonding disc for wafer bonding is used, the upper bonding disc and the lower bonding disc are symmetrically arranged, and the upper wafer and the lower wafer are placed between the two bonding discs. The direction close to the wafer is the inner side, and the direction far away from the wafer is the outer side. Namely, the upper part of the lower bonding pad is the inner side, the lower part is the outer side, the lower part of the upper bonding pad is the inner side, and the upper part is the outer side.
The working process of the invention is as follows: and a wafer clamping mechanism such as a wafer chuck clamps the wafer pair and sends the wafer pair between the upper and lower bonding disks, and the upper bonding disk is lowered to the position of the wafer, so that the inner surfaces of the pressure plates of the upper and lower bonding disks are contacted with the wafer. The pressurization, heating and cooling are performed according to the specific bonding process requirements.
According to the invention, the graphite layer is sandwiched between the pressure plate and the heating plate, the graphite layer is a uniform heating layer and a buffer layer of the bonding plate, and the graphite has high thermal conductivity and high compression deformation rate. By utilizing the characteristic of high heat conductivity of graphite, the heat of the heating plate can be uniformly conducted to the pressing plate after being uniformly heated through the graphite layer. By utilizing the characteristic of high compression deformation rate of graphite, when the bonding disc bears pressure, the graphite layer can deform, and the parallelism error of the upper pressure plate and the lower pressure plate can be compensated.
The heat insulation layer is arranged on the outermost side of the bonding pad and can be used as the mounting plate of the connecting piece at the same time, and the heat insulation layer can prevent the temperature of the heating plate from being transmitted to the connecting piece of the heating plate and the vacuum cavity, so that parts are prevented from being damaged, and personnel are prevented from being scalded.
And the thermal insulation layer of the invention comprises an inner reflecting screen and an outer substrate. The heat of heating plate is reflected back to the reflecting screen, reduces the heat exchange between heating plate and the insulating layer base plate to the heating efficiency of heating plate has been improved to a certain extent. The heat insulating layer substrate takes away heat passing through the reflecting screen through cooling liquid circulation, and reduces heat conducted to other connecting pieces. When the base plate is cooling, the reflecting screen can also play the certain isolation effect of heating plate and base plate, reduces the influence of the cooling of base plate to the heating plate. Through the thermal-insulated setting of reflecting screen and base plate, can be fine prevent that the hot volume of heating plate from conducting to parts such as connecting piece, thermal-insulated effectual, heating plate heating efficiency is high, and the influence is less when base plate cooling effect heats the heating plate.
In summary, the bonding pad for wafer bonding of the present invention enables the heat of the heating plate to be uniformly conducted to the platen through the graphite layer, so that the parallelism error of the upper platen and the lower platen can be compensated. Through the fine volume conduction to parts such as connecting piece that prevents heating plate heat of insulating layer including reflecting screen and base plate, thermal-insulated effectual, heating plate heating efficiency is high, and the influence is less when base plate cooling effect heats the heating plate. In addition, the invention has simple structure.
As a modification of the present invention, the heating plate 130 and the pressure plate 110 are connected by a resilient connection 160.
When the heating plate is heated, the heating plate and the pressure plate can be subjected to thermal expansion deformation, so that the effect of the fixed connection mode of the heating plate and the pressure plate is poor. When the temperature of the heating plate rises and the heating plate and the pressing plate thermally expand, the thickness change of the heating plate and the pressing plate is compensated through the elastic connecting piece.
The resilient connecting member 160 is preferably a spring hook, and the platen is fixed by clamping with the spring hook.
As another modification of the present invention, the heating pan 130 includes a heating pan base 131 and a heating element 132 disposed on the heating pan base 131, the heating element density at the center on the heating pan base 131 is greater than that at the edge, and the heating element is preferably a heating wire disposed in a ring shape.
The temperature uniformity of the heating plate is the key for successful bonding, and if the temperature uniformity of the heating plate is poor, the wafer is easy to cause different thermal expansion at different positions to cause wafer fragmentation. When the wafer diameter is large, for example, larger than 300mm, the heating area is large, and there are factors of heat dissipation and edge effect in the edge portion and the central portion, resulting in uneven heat in the edge portion and the central portion. The density of the heating elements at the center of the heater plate base is greater than the density of the heating elements at the edges.
The invention can also arrange temperature measuring feedback elements such as temperature sensors and the like at all positions of the heating plate to detect the temperature of the heating plate and whether the temperature is uniform.
Preferably, the heating plate base 131 includes an inner circular heating zone 133 and an outer circular heating zone 134, the heating element density of the outer circular heating zone 134 is greater than that of the inner circular heating zone 133, and the heating elements of the inner circular heating zone 133 and the heating elements of the outer circular heating zone 134 are separately controlled.
When the diameter of the wafer is larger, the heating area is larger, the outer ring of the heating plate has an edge effect, and the same heating element is difficult to meet the requirement of high uniformity of the bonded wafer. Therefore, when a large wafer is bonded, the heating area on the heating plate substrate is necessarily divided into an inner heating area and an outer heating area, two groups of heating elements and two groups of temperature measurement feedback elements are arranged, and the two heating areas are independently controlled, so that the temperature uniformity required by wafer bonding can be better ensured.
The heating plate 130 and the cooling plate 140 of the present invention may be an integrated structure, a cooling medium circulation pipe 135 is provided in the heating plate base 131 to form the cooling plate, and the cooling medium circulation pipe 135 is connected to an external pipe (a pipe for passing in and out of a cooling liquid) 170 for supplying a cooling medium.
The cooling medium of the cooling plate can be liquid nitrogen, water, compressed air and the like. When the heating plate is heated, the circulation of the cooling medium is stopped, and the heating rate is increased. And after the wafer bonding is finished, stopping heating, starting to circulate a cooling medium, and cooling the heating plate and the wafer.
The cooling medium circulation pipe is a metal pipe, the cooling medium circulation pipe 135 and the external pipe 170 are preferably the same pipe of an integral structure, and the cooling medium circulation pipe 135 is disposed in the heating pan base 131 by means of casting.
The external pipeline of the cooling plate in the prior art is directly welded with the cooling medium circulating pipeline of the cooling plate, the welding mode cannot bear high pressure, the flow of circulating cooling liquid is limited, and when the cooling liquid is increased to exceed the welding seam bearing limit, the welding seam falls off and the water leakage risk is extremely high.
The cooling medium circulating pipeline is arranged in the heating plate in a metal pipe die-casting mode, the external pipeline and the cooling medium circulating pipeline are integrated, and the outlet pipe of the cooling medium circulating pipeline is not welded. The integrated pipeline is better than a welded pipeline, can be under higher pressure, and has larger flow of a cooling medium and large heat dissipation capacity in the pipeline with the same diameter, thereby being capable of improving the cooling rate.
The reflecting screens 151 can be multi-layer, preferably 3-5 layers, and two adjacent reflecting screens 151 are isolated by the cylindrical blocks 153.
The base plate 152 is provided with a temperature sensor for detecting the temperature of the base plate, the temperature of the base plate is ensured within 50 ℃ and more preferably within 30 ℃ by adjusting the flow of the cooling medium, and when the temperature of the base plate exceeds the set temperature, the heating plate stops heating continuously. The cooling medium for the substrate may be liquid nitrogen, water, compressed air, or the like, and is preferably water.
The platen 110 and the heating plate 130 are made of ceramic or stainless steel.
The heating plate is a key component of the bonding plate, and parameters such as heating temperature, temperature uniformity, stability, heating rate and the like of the heating plate are all the keys for determining whether the wafer bonding is successful or not. The bonding temperatures required for different bonding processes are different. The bonding temperature of the adhesive bonding process is within 250 ℃, the diffusion bonding temperature of copper-copper metal needs to reach 450 ℃, and the eutectic bonding temperature is 290 ℃. The heating plate material is selected by considering parameters such as application environment, use temperature, bearing pressure, thermal expansion coefficient and the like. If the heating temperature reaches 450 ℃, SiC ceramic and SI with large pressure resistance and small thermal expansion coefficient can be selected under vacuum and high temperature environment3N4Ceramics and the like. If the heating temperature is less than 450 ℃, stainless steel materials can be selected. The ceramic material and the stainless steel material have good heat-conducting property, and can increase the uniformity of the temperature of the heating plate to a certain extent.
When the pressure plate material is selected, the pressure bearing, heating temperature, use environment and other conditions need to be considered, and SiC ceramic and SI can be selected3N4Ceramic materials such as ceramics, and stainless steel.
The wafer bonding generally requires bonding pressure which can reach 100KN at most, so that the parallelism error of an upper pressure plate and a lower pressure plate is compensated through the compression deformation performance of the graphite layer. In order to ensure the deformability of graphite, the graphite layer needs to have a certain thickness, and the thickness of the graphite layer needs to be controlled within a range of 2-5 mm, and the optimal thickness is 3 mm.
The platen is a member that contacts the wafer, and therefore is required to have a good surface flatness and a high degree of finish. The flatness of the inner surface in contact with the wafer is 2-4 μm, preferably 3 μm, and should not be too large or too small, if the surface flatness accuracy is too high, the wafer and the platen may be bonded together after wafer bonding. If the surface flatness accuracy is too low, wafer chipping can be caused when subjected to pressure during bonding.
The embodiment of the invention also provides a wafer bonding apparatus, which includes the bonding pad 100 for wafer bonding.
The wafer bonding apparatus of the present invention includes the aforementioned bonding pad for wafer bonding, and naturally has the beneficial effects of the bonding pad for wafer bonding, which are not described herein again.
The wafer bonding device of the invention can only comprise a bonding disc, the wafer is clamped on the wafer chuck, and the wafer chuck and the bonding disc bond the wafer.
The wafer bonding apparatus of the present invention may include 2 bonding pads, as shown in fig. 5, which includes a bonding chamber 200, and an upper bonding pad 300 and a lower bonding pad 400 are symmetrically disposed in the bonding chamber 200. The wafer chuck clamps the upper and lower wafers and places the wafers on the lower bonding plate after the wafers are sent into the bonding cavity. The upper bonding pad 300 is connected to a pressure cylinder 500, and the upper bonding pad can slide up and down to heat the upper wafer and provide bonding pressure. The lower bond pad 400 is attached to the bottom plate of the bonding chamber and heats the lower wafer and provides support. The upper and lower bonding pads are separately controlled. Both the upper bonding pad 300 and the lower bonding pad 400 are the aforementioned bonding pads 100 for wafer bonding.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The utility model provides a bonding pad for wafer bonding, its characterized in that, a bonding pad for wafer bonding includes pressure disk, graphite layer, heating plate, cooling plate and insulating layer from inboard to the outside in proper order, the insulating layer includes reflecting screen and base plate, the base plate sets up the outside at the reflecting screen, be provided with cooling medium circulation channel in the base plate.
2. The bond pad for wafer bonding of claim 1, wherein the heating plate and the pressure plate are connected by a resilient connection.
3. The bonding pad for wafer bonding of claim 2, wherein the resilient connecting member is a spring hook.
4. The bond pad for wafer bonding of any of claims 1-3, wherein the heater plate comprises a heater plate substrate and heating elements disposed on the heater plate substrate, the heater plate substrate having a center heating element density that is greater than an edge heating element density.
5. The bond pad for wafer bonding of claim 4, wherein the heater pad substrate comprises an inner circular heating zone and an outer annular heating zone, the outer annular heating zone having a heating element density greater than the inner circular heating zone, the heating elements of the inner circular heating zone and the heating elements of the outer annular heating zone being individually controllable.
6. The bonding pad for wafer bonding according to claim 4, wherein the heating pad and the cooling pad are of a unitary structure, and a cooling medium circulation pipe is disposed in the heating pad base body to form the cooling pad, and the cooling medium circulation pipe is connected to an external pipe for supplying a cooling medium.
7. The bonding pad for wafer bonding according to claim 6, wherein the cooling medium circulation pipe is a same pipe of an integral structure with the outer pipe, and the cooling medium circulation pipe is disposed in the heating pad base body by means of casting.
8. The bonding pad for wafer bonding according to claim 7, wherein the reflecting screens are multiple layers, and adjacent two reflecting screens are separated by a cylindrical block.
9. The bonding pad for wafer bonding according to claim 8, wherein the number of the reflecting screen layers is 3-5, the substrate is provided with a temperature sensor, the pressure plate and the heating plate are made of ceramic or stainless steel, the thickness of the graphite layer is 2-5 mm, and the flatness of the inner surface of the pressure plate is 2-4 μm.
10. A wafer bonding apparatus comprising the bonding pad for wafer bonding as claimed in any one of claims 1 to 9.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2020106332557 | 2020-07-02 | ||
| CN202010633255 | 2020-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112053975A true CN112053975A (en) | 2020-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010956483.8A Pending CN112053975A (en) | 2020-07-02 | 2020-09-11 | Bonding disc for wafer bonding and wafer bonding device |
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| CN (1) | CN112053975A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2745297C1 (en) * | 2020-08-05 | 2021-03-23 | Обществом с ограниченной ответственностью "Маппер" | Device for manual alignment of silicon wafers prior to temporary splicing |
| CN113432379A (en) * | 2021-07-30 | 2021-09-24 | 上海睿昇半导体科技有限公司 | Heating and cooling integrated tray body and manufacturing method and application thereof |
| CN114446833A (en) * | 2022-01-25 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor process equipment |
| CN115442927A (en) * | 2022-11-04 | 2022-12-06 | 上海星原驰半导体有限公司 | Composite temperature control disc |
-
2020
- 2020-09-11 CN CN202010956483.8A patent/CN112053975A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2745297C1 (en) * | 2020-08-05 | 2021-03-23 | Обществом с ограниченной ответственностью "Маппер" | Device for manual alignment of silicon wafers prior to temporary splicing |
| CN113432379A (en) * | 2021-07-30 | 2021-09-24 | 上海睿昇半导体科技有限公司 | Heating and cooling integrated tray body and manufacturing method and application thereof |
| CN114446833A (en) * | 2022-01-25 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor process equipment |
| CN115442927A (en) * | 2022-11-04 | 2022-12-06 | 上海星原驰半导体有限公司 | Composite temperature control disc |
| CN115442927B (en) * | 2022-11-04 | 2023-03-10 | 上海星原驰半导体有限公司 | Composite temperature control disc |
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Address after: 100176 floor 2, building 2, yard 19, Kechuang 10th Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing (Yizhuang group, high-end industrial area of Beijing Pilot Free Trade Zone) Applicant after: BEIJING U-PRECISION TECH Co.,Ltd. Address before: 100084 Tsinghua Science Park, Haidian District, Beijing Applicant before: BEIJING U-PRECISION TECH Co.,Ltd. |