CN112050959B - Temperature detection circuit based on SiC-MOSFET and electronic equipment - Google Patents
Temperature detection circuit based on SiC-MOSFET and electronic equipment Download PDFInfo
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- CN112050959B CN112050959B CN202010920554.9A CN202010920554A CN112050959B CN 112050959 B CN112050959 B CN 112050959B CN 202010920554 A CN202010920554 A CN 202010920554A CN 112050959 B CN112050959 B CN 112050959B
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- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention provides a temperature detection circuit based on a SiC-MOSFET and an electronic device, which are characterized in that on the basis of temperature detection of a device to be detected, a detection current is converted into a temperature detection voltage through a SiC-MOSFET temperature sensing module, so that the dependence characteristic of the temperature detection circuit on the current can be reduced, and the detection precision is improved. And the hysteresis comparison module compares the upper limit voltage and the lower limit voltage with the temperature detection voltage to equivalently generate a temperature hysteresis space through the upper limit voltage and the lower limit voltage, so that the situation that the temperature detection circuit frequently and alternately outputs a high-temperature alarm signal and releases the high-temperature alarm signal is avoided.
Description
Technical Field
The invention relates to the technical Field of power electronics, in particular to a temperature detection circuit based on a silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC-MOSFET) and electronic equipment.
Background
SiC is a third-generation wide bandgap semiconductor material, and the electron saturation drift velocity of the SiC material is high and is about 2.5 times that of the Si material, so that the SiC power device has high switching speed and high current density, is particularly suitable for being applied to high-frequency and high-power occasions, and the volume of a filter element is reduced due to the improvement of the switching frequency. The critical breakdown electric field of the SiC material is about 10 times that of a Si device, and compared with the Si power device of the same type, the SiC power device can bear higher working voltage and has advantages in high-voltage application occasions. The specific on-resistance of the SiC power device is small, so that the loss of the system can be reduced, and the efficiency of the system can be improved. The SiC material has high thermal conductivity which is about 3 times that of the Si material, and the high thermal conductivity can simplify and improve a heat dissipation system, so that the weight and the volume of the whole system are effectively reduced, and the power density of the system is improved. The SiC-based chip has obvious advantages and is widely applied to new energy automobiles. However, the SiC-based chip generates a large amount of power consumption during operation, and the heat converted by the power consumption affects the performance of the SiC-based chip, so that the temperature detection of the SiC-based chip is particularly important.
Disclosure of Invention
In view of the above, the invention provides a temperature detection circuit based on a SiC-MOSFET and an electronic device, which effectively solve the technical problems in the prior art, reduce the dependence of the temperature detection circuit on current to improve detection accuracy on the basis of performing temperature detection on a device to be detected, and avoid the situation that the temperature detection circuit frequently and alternately outputs a high-temperature alarm signal and releases the high-temperature alarm signal.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a SiC-MOSFET based temperature detection circuit comprising:
the current generation module comprises a detection current output branch circuit for outputting detection current and a reference current output branch circuit for outputting reference current;
the SiC-MOSFET temperature sensing module is connected to the detection current and is used for generating temperature detection voltage according to the temperature of the device to be detected and the detection current;
the gate voltage generating module is connected to the reference current and generates an upper limit voltage and a lower limit voltage according to the reference current, wherein the upper limit voltage is greater than the lower limit voltage;
and the hysteresis comparison module is connected with the temperature detection voltage, the upper limit voltage and the lower limit voltage, and is used for outputting a high-temperature alarm signal when judging that the temperature detection voltage is greater than the upper limit voltage until the hysteresis comparison module judges that the temperature detection voltage is less than the lower limit voltage and outputting a high-temperature alarm signal for removing.
Optionally, the SiC-MOSFET temperature sensing module includes: the circuit comprises a first N-type SiC-MOSFET, a second N-type SiC-MOSFET, a first operational amplifier, a first resistor, a second resistor, a third resistor and a fourth resistor; the detection current comprises a first sub-detection current and a second sub-detection current, the second sub-detection current is N times of the first sub-detection current, and N is an integer greater than 1;
the grid electrode, the substrate and the source electrode of the first N-type SiC-MOSFET are connected to the first sub-detection current, the drain electrode of the first N-type SiC-MOSFET is connected with a grounding terminal, the grid electrode of the first N-type SiC-MOSFET is connected with the first end of the first resistor, the second end of the first resistor is connected with the in-phase end of the first operational amplifier and the first end of the second resistor, and the second end of the second resistor is connected with the grounding terminal;
the grid electrode, the substrate and the source electrode of the second N-type SiC-MOSFET are connected to the second sub-detection current, the drain electrode of the second N-type SiC-MOSFET is connected with the grounding end, the grid electrode of the second N-type SiC-MOSFET is connected with the first end of the third resistor, the second end of the third resistor is connected with the inverting end of the first operational amplifier and the first end of the fourth resistor, the second end of the fourth resistor is connected with the output end of the first operational amplifier, and the output end of the first operational amplifier is used for outputting temperature detection voltage.
Optionally, the device to be tested is a SiC-based chip, wherein the first N-type SiC-MOSFET and the second N-type SiC-MOSFET are integrated in the SiC-based chip.
Optionally, the current generating module includes: a reference current generation submodule and a mirror current submodule;
the reference current generation submodule is used for generating a reference current;
and the mirror current submodule is used for mirroring the reference current to generate the first sub-detection current, the second sub-detection current and the reference current, wherein the first sub-detection current and the reference current are the same as the reference current.
Optionally, the reference current generation sub-module includes: the second operational amplifier, the first N-type transistor and the fifth resistor;
the non-inverting terminal of the second operational amplifier is connected with the reference voltage, the inverting terminal of the second operational amplifier is connected with the first terminal of the fifth resistor, the substrate and the source electrode of the first N-type transistor, the output terminal of the second operational amplifier is connected with the grid electrode of the first N-type transistor, the second terminal of the fifth resistor is connected with the grounding terminal, and the drain electrode of the first N-type transistor outputs the reference current and is connected with the mirror current source submodule.
Optionally, the mirror current sub-module includes: a first P-type transistor, a second P-type transistor, a third P-type transistor, a fourth P-type transistor, a fifth P-type transistor, a sixth P-type transistor, a seventh P-type transistor, and an eighth P-type transistor;
the source electrode and the substrate of the first P-type transistor are connected with a power supply voltage end, the grid electrode and the drain electrode of the first P-type transistor are connected with the source electrode of the second P-type transistor, the substrate of the second P-type transistor is connected with the power supply voltage end, and the grid electrode and the drain electrode of the second P-type transistor are connected with the reference current;
the source electrode and the substrate of the third P-type transistor are connected with a power supply voltage end, the grid electrode of the third P-type transistor is connected with the grid electrode of the first P-type transistor, the drain electrode of the third P-type transistor is connected with the source electrode of the fourth P-type transistor, the substrate of the fourth P-type transistor is connected with the power supply voltage end, the grid electrode of the fourth P-type transistor is connected with the grid electrode of the second P-type transistor, and the drain electrode of the fourth P-type transistor outputs the first sub-detection current;
the source and the substrate of the fifth P-type transistor are connected with a power supply voltage end, the gate of the fifth P-type transistor is connected with the gate of the first P-type transistor, the drain of the fifth P-type transistor is connected with the source of the sixth P-type transistor, the substrate of the sixth P-type transistor is connected with the power supply voltage end, the gate of the sixth P-type transistor is connected with the gate of the second P-type transistor, and the drain of the sixth P-type transistor outputs the second sub-detection current;
the source electrode and the substrate of the seventh P-type transistor are connected with a power supply voltage end, the grid electrode of the seventh P-type transistor is connected with the grid electrode of the first P-type transistor, the drain electrode of the seventh P-type transistor is connected with the source electrode of the eighth P-type transistor, the substrate of the eighth P-type transistor is connected with the power supply voltage end, the grid electrode of the eighth P-type transistor is connected with the grid electrode of the second P-type transistor, and the drain electrode of the eighth P-type transistor outputs the reference current.
Optionally, the gate voltage generating module includes: a sixth resistor, a seventh resistor and an eighth resistor;
the first end of the sixth resistor is connected to the reference current, the second end of the sixth resistor is connected to the first end of the seventh resistor, the second end of the seventh resistor is connected to the first end of the eighth resistor, the second end of the eighth resistor is connected to the ground terminal, the second end of the sixth resistor outputs the upper limit voltage, and the second end of the seventh resistor outputs the lower limit voltage.
Optionally, the hysteresis comparing module includes: the circuit comprises a first comparator, a second comparator, an RS trigger latch and a first inverter;
the non-inverting terminal of the first comparator and the non-inverting terminal of the second comparator are connected to the temperature detection voltage, the inverting terminal of the first comparator is connected to the upper limit voltage, the inverting terminal of the second comparator is connected to the lower limit voltage, the output end of the first comparator is connected to the first input end of the RS trigger latch, the output end of the second comparator is connected to the second input end of the RS trigger latch, the output end of the RS trigger latch is connected to the input end of the first phase inverter, and the output end of the first phase inverter is used for outputting the high-temperature alarm signal or releasing the high-temperature alarm signal.
Optionally, the current generation module, the SiC-MOSFET temperature sensing module, and the hysteresis comparison module are all connected to an enable control terminal.
Correspondingly, the invention also provides electronic equipment which comprises the temperature detection circuit of the SiC-MOSFET.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides a temperature detection circuit based on a SiC-MOSFET and an electronic device, comprising: the current generation module comprises a detection current output branch circuit for outputting detection current and a reference current output branch circuit for outputting reference current; the SiC-MOSFET temperature sensing module is connected to the detection current and is used for generating temperature detection voltage according to the temperature of the device to be detected and the detection current; the gate voltage generating module is connected to the reference current and generates an upper limit voltage and a lower limit voltage according to the reference current, wherein the upper limit voltage is greater than the lower limit voltage; and the hysteresis comparison module is connected with the temperature detection voltage, the upper limit voltage and the lower limit voltage, and is used for outputting a high-temperature alarm signal when judging that the temperature detection voltage is greater than the upper limit voltage until the hysteresis comparison module judges that the temperature detection voltage is less than the lower limit voltage and outputting a high-temperature alarm signal for removing.
According to the technical scheme, on the basis of temperature detection of the device to be detected, the detection current is converted into the temperature detection voltage through the SiC-MOSFET temperature sensing module, so that the dependence of the temperature detection circuit on the current can be reduced, and the detection precision is improved. And the hysteresis comparison module compares the upper limit voltage and the lower limit voltage with the temperature detection voltage to equivalently generate a temperature hysteresis space through the upper limit voltage and the lower limit voltage, so that the condition that the temperature detection circuit frequently and alternately outputs a high-temperature alarm signal and removes the high-temperature alarm signal is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a temperature detection circuit based on a SiC-MOSFET according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another SiC-MOSFET-based temperature detection circuit provided in the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background art, the SiC-based chip has obvious advantages and is widely applied to new energy automobiles. However, the SiC-based chip generates a large amount of power consumption during operation, and the heat converted by the power consumption affects the performance of the SiC-based chip, so that the temperature detection of the SiC-based chip is particularly important.
Based on the temperature detection circuit and the electronic equipment, the embodiment of the invention provides the temperature detection circuit based on the SiC-MOSFET and the electronic equipment, which effectively solve the technical problems in the prior art, reduce the dependence characteristic of the temperature detection circuit on current on the basis of temperature detection of a device to be detected, improve the detection precision and avoid the situation that the temperature detection circuit frequently and alternately outputs high-temperature alarm signals and releases the high-temperature alarm signals.
To achieve the above object, the technical solutions provided by the embodiments of the present invention are described in detail below, specifically with reference to fig. 1 to 2.
Referring to fig. 1, a schematic structural diagram of a SiC-MOSFET-based temperature detection circuit provided for an embodiment of the present invention is shown, where the SiC-MOSFET-based temperature detection circuit includes:
the current generation module 100 includes a detection current output branch outputting a detection current and a reference current output branch outputting a reference current.
And the SiC-MOSFET temperature sensing module 200 is connected to the detection current, and the SiC-MOSFET temperature sensing module 200 is used for generating temperature detection voltage according to the temperature of the device to be detected and the detection current.
And a gate voltage generating module 300 connected to the reference current, wherein the gate voltage generating module 300 generates an upper limit voltage and a lower limit voltage according to the reference current, and the upper limit voltage is greater than the lower limit voltage.
And a hysteresis comparison module 400 connected to the temperature detection voltage, the upper limit voltage and the lower limit voltage, wherein the hysteresis comparison module 400 is configured to output a high temperature alarm signal when determining that the temperature detection voltage is greater than the upper limit voltage, and output a high temperature alarm release signal until the hysteresis comparison module 400 determines that the temperature detection voltage is less than the lower limit voltage.
It can be understood that the technical solution provided by the embodiment of the present invention can perform over-temperature detection on the device to be detected, wherein the temperature detection voltage output by the SiC-MOSFET temperature sensing module changes with the temperature of the device to be detected, that is, the temperature detection voltage increases when the temperature of the device to be detected increases, and the temperature detection voltage decreases when the temperature of the device to be detected decreases, and then whether the temperature of the device to be detected is too high or in a normal level is determined according to the magnitude relationship between the temperature detection voltage and the upper limit voltage and the lower limit voltage, so that a user can perform corresponding processing.
According to the technical scheme provided by the embodiment of the invention, on the basis of temperature detection of the device to be detected, the detection current is converted into the temperature detection voltage through the SiC-MOSFET temperature sensing module, so that the purpose of temperature detection is achieved by judging and processing the voltage signal, and the dependence characteristic of the temperature detection circuit on the current can be further reduced, and the detection precision is improved. And the hysteresis comparison module compares the upper limit voltage and the lower limit voltage with the temperature detection voltage to equivalently generate a temperature hysteresis space through the upper limit voltage and the lower limit voltage, so that the situation that the temperature detection circuit frequently and alternately outputs a high-temperature alarm signal and releases the high-temperature alarm signal is avoided.
A specific circuit structure of the temperature detection circuit provided by the embodiment of the present invention is described with reference to a schematic structural diagram of another SiC-MOSFET-based temperature detection circuit shown in fig. 2. As shown in fig. 2, the SiC-MOSFET temperature sensing module 200 according to the embodiment of the present invention includes: the first N-type SiC-MOSFET211, the second N-type SiC-MOSFET212, the first operational amplifier OPAM1, the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are identical in resistance, and the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are identical in resistance; the detection current comprises a first sub detection current I1 and a second sub detection current I2, the second sub detection current I2 is N times of the first sub detection current I1, and N is an integer greater than 1.
The gate, the substrate and the source of the first N-type SiC-MOSFET211 are connected to the first sub-detection current I1, the drain of the first N-type SiC-MOSFET211 is connected to a ground terminal GND, the gate of the first N-type SiC-MOSFET211 is connected to a first end of the first resistor R1, a second end of the first resistor R1 is connected to a non-inverting terminal of the first operational amplifier OPAM1 and a first end of the second resistor R2, and a second end of the second resistor R2 is connected to the ground terminal GND.
The gate, the substrate and the source of the second N-type SiC-MOSFET212 are connected to the second sub-detection current I2, the drain of the second N-type SiC-MOSFET212 is connected to a ground terminal GND, the gate of the second N-type SiC-MOSFET212 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the inverting terminal of the first operational amplifier OPAM1 and the first end of the fourth resistor R4, the second end of the fourth resistor R4 is connected to the output terminal of the first operational amplifier OPAM1, and the output terminal of the first operational amplifier OPAM1 is used for outputting a temperature detection voltage.
It can be understood that the SiC-MOSFET temperature sensing module provided by the embodiment of the invention mainly uses the voltage difference of the body diode D1 and the body diode D2 corresponding to the first N-type SiC-MOSFET and the second N-type SiC-MOSFET respectively to characterize the temperature-voltage characteristics of the device under test. And the temperature detection is realized through the two differential first N-type SiC-MOSFET and second N-type SiC-MOSFET, so that the influence of the noise of a single SIC power device can be eliminated through the difference, and the detection precision is improved. The parameters of the first N-type SiC-MOSFET and the second N-type SiC-MOSFET provided by the embodiment of the invention are the same, and the voltage difference between the first N-type SiC-MOSFET and the second N-type SiC-MOSFET is determined by the following formula:
VT*ln(N*I0/IS)-VT*ln(I0/IS)＝VT*ln(N)
wherein, VT IS thermal voltage, N IS a multiple of the second sub-detection current I2 being the first sub-detection current I1, the I0 current value IS the same as I1, and IS IS the saturation current of the first N-type SiC-MOSFET and the second N-type SiC-MOSFET.
Because the first operational amplifier forms a negative feedback amplifying circuit through the first resistor to the fourth resistor, the temperature detection voltage output by the first operational amplifier is determined by the following formula:
(VBE1*(R2/(R1+R2))-VBE2)*(R3+R4)/R3+VBE2＝VEB1-VBE2＝VT*ln(N)
where VBE1 is the gate-to-GND voltage of the first N-type SiC-MOSFET and VBE2 is the gate-to-GND voltage of the second N-type SiC-MOSFET.
The temperature detection voltage output by the SiC-MOSFET temperature sensing module can be obtained by the determination formula of the temperature detection voltage, and is equal to VT x ln (N).
In an embodiment of the invention, the device to be tested is a SiC-based chip, wherein the first N-type SiC-MOSFET and the second N-type SiC-MOSFET are integrated in the SiC-based chip, and the first N-type SiC-MOSFET and the second N-type SiC-MOSFET are formed in the process of preparing the SiC-based chip, so that the SiC-MOSFET does not need to be additionally prepared independently, the manufacturing cost is reduced, and the process manufacturing flow is saved.
In an embodiment of the present invention, the current generating module 100 provided by the present invention includes: a reference current generation submodule and a mirror current submodule; wherein the reference current generation submodule is used for generating a reference current. And the mirror current submodule is used for mirroring the reference current to generate the first sub-detection current, the second sub-detection current and the reference current, wherein the first sub-detection current and the reference current are the same as the reference current.
Specifically, as shown in fig. 2, the reference current generating sub-module provided in the embodiment of the present invention includes: a second operational amplifier OPAM2, a first N-type transistor N1, and a fifth resistor R5.
The non-inverting terminal of the second operational amplifier OPAM2 is connected to a reference voltage Vr (the reference voltage Vr may be 1.25V as provided by the embodiment of the present invention), the inverting terminal of the second operational amplifier OPAM2 is connected to the first terminal of the fifth resistor R5 and the substrate and the source of the first N-type transistor N1, the output terminal of the second operational amplifier OPAM2 is connected to the gate of the first N-type transistor N1, the second terminal of the fifth resistor R5 is connected to the ground GND, and the drain of the first N-type transistor N1 outputs the reference current and is connected to the mirror current source sub-module.
As shown in fig. 2, the mirror current sub-module provided in the embodiment of the present invention includes: a first P-type transistor P1, a second P-type transistor P2, a third P-type transistor P3, a fourth P-type transistor P4, a fifth P-type transistor P5, a sixth P-type transistor P6, a seventh P-type transistor P7, and an eighth P-type transistor P8.
The source electrode and the substrate of the first P-type transistor P1 are connected with a power supply voltage end VCC, the grid electrode and the drain electrode of the first P-type transistor P1 are connected with the source electrode of the second P-type transistor P2, the substrate of the second P-type transistor P2 is connected with the power supply voltage end VCC, the grid electrode and the drain electrode of the second P-type transistor P2 are connected with the reference current, namely the grid electrode and the drain electrode of the second P-type transistor P2 are connected with the drain electrode of the first N-type transistor N1.
The source and the substrate of the third P-type transistor P3 are connected with a power supply voltage end VCC, the gate of the third P-type transistor P3 is connected with the gate of the first P-type transistor P1, the drain of the third P-type transistor P3 is connected with the source of the fourth P-type transistor P4, the substrate of the fourth P-type transistor P4 is connected with the power supply voltage end VCC, the gate of the fourth P-type transistor P4 is connected with the gate of the second P-type transistor P2, and the drain of the fourth P-type transistor P4 outputs the first sub detection current I1.
The source and the substrate of the fifth P-type transistor P5 are connected to a power supply voltage terminal VCC, the gate of the fifth P-type transistor P5 is connected to the gate of the first P-type transistor P1, the drain of the fifth P-type transistor P5 is connected to the source of the sixth P-type transistor P6, the substrate of the sixth P-type transistor P6 is connected to the power supply voltage terminal VCC, the gate of the sixth P-type transistor P6 is connected to the gate of the second P-type transistor P2, and the drain of the sixth P-type transistor P6 outputs the second sub-detection current I2.
The source and the substrate of the seventh P-type transistor P7 are connected to a power supply voltage terminal VCC, the gate of the seventh P-type transistor P7 is connected to the gate of the first P-type transistor P1, the drain of the seventh P-type transistor P7 is connected to the source of the eighth P-type transistor P8, the substrate of the eighth P-type transistor P8 is connected to the power supply voltage terminal VCC, the gate of the eighth P-type transistor P8 is connected to the gate of the second P-type transistor P2, and the drain of the eighth P-type transistor P8 outputs the reference current I3.
It can be understood that, in the current generation module provided in the embodiment of the present invention, due to the loop stabilizing function of the second operational amplifier, the voltages at the non-inverting terminal and the inverting terminal of the second operational amplifier are virtually short, so the voltage at both ends of the fifth resistor is equal to the reference voltage, and the current flowing through the fifth resistor is I0 — Vr/R5. Meanwhile, the current flowing through the first N-type transistor, the first P-type transistor and the second P-type transistor is equal to the current flowing through the fifth resistor, so that the reference current is the current flowing through the fifth resistor.
The first P-type transistor, the third P-type transistor and the seventh P-type transistor have the same aspect ratio, the second P-type transistor, the fourth P-type transistor and the eighth P-type transistor have the same aspect ratio, the fifth P-type transistor has an aspect ratio N times that of the first P-type transistor, and the sixth P-type transistor has an aspect ratio N times that of the second P-type transistor, so that the first sub-detection current and the reference current are equal to the reference current, and the second sub-detection current is N times that of the reference current.
As shown in fig. 2, the gate voltage generating module 300 according to the embodiment of the present invention includes: a sixth resistor R6, a seventh resistor R7, and an eighth resistor R8; a first end of the sixth resistor R6 is connected to the reference current I3, a second end of the sixth resistor R6 is connected to a first end of the seventh resistor R7, a second end of the seventh resistor R7 is connected to a first end of the eighth resistor R8, and a second end of the eighth resistor R8 is connected to a ground GND, wherein the second end of the sixth resistor R6 outputs the upper limit voltage, and the second end of the seventh resistor R7 outputs the lower limit voltage.
It can be understood that the gate voltage generating module provided in the embodiment of the present invention is substantially a voltage dividing module, wherein the upper limit voltage output by the second terminal of the sixth resistor is I3 (R7+ R8), and the lower limit voltage output by the second terminal of the seventh resistor is I3R 8. Optionally, the fifth resistor, the sixth resistor, the seventh resistor and the eighth resistor provided in the embodiment of the present invention are all resistors of the same type, where the fifth resistor to the eighth resistor may be zero-temperature coefficient material resistors, and specifically may be polysilicon resistors, so that the fifth resistor, the sixth resistor, the seventh resistor and the eighth resistor are not changed along with temperature change, the upper limit voltage and the lower limit voltage are zero-temperature coefficient voltages, high accuracy of the upper limit voltage and the lower limit voltage is ensured, and a purpose of improving detection accuracy of the temperature detection circuit is achieved.
As shown in fig. 2, the hysteresis comparison module 400 provided by the embodiment of the present invention includes: a first comparator COMP1, a second comparator COMP2, an RS triggered latch 410, and a first inverter INV 1.
The same phase ends of the first comparator COMP1 and the second comparator COMP2 are connected to the temperature detection voltage, the opposite phase end of the first comparator COMP1 is connected to the upper limit voltage, the opposite phase end of the second comparator COMP2 is connected to the lower limit voltage, the output end of the first comparator COMP1 is connected to the first input end of the RS trigger latch 410, the output end of the second comparator COMP2 is connected to the second input end of the RS trigger latch 410, the output end of the RS trigger latch 410 is connected to the input end of the first inverter INV1, and the output end of the first inverter INV1 is used for outputting the high temperature alarm signal or the high temperature alarm release signal.
The RS flip-flop latch 410 provided by the embodiment of the present invention includes a second N-type transistor N2, a third N-type transistor N3, a ninth P-type transistor P9, a second inverter INV2, and a third inverter INV 3. The gates of the second N-type transistor N2 and the ninth P-type transistor P9 are both connected to the output terminal of the first comparator COMP1, the substrate and the source of the ninth P-type transistor are connected to the power supply voltage terminal VCC, and the drain of the ninth P-type transistor P9 is connected to the drain of the second N-type transistor N2. The drain of the second N-type transistor N2 is connected to the input end of the second inverter INV2 and the output end of the third inverter INV3, the substrate of the second N-type transistor N2 is connected to the ground GND, and the source of the second N-type transistor N2 is connected to the drain of the third N-type transistor N3. The gate of the third N-type transistor N3 is connected to the output terminal of the second comparator COMP2, and the substrate and source of the third N-type transistor N3 are connected to the ground terminal GND. An output end of the second inverter INV2 and an input end of the third inverter INV3 are connected to an input end of the first inverter INV 1.
It can be understood that, in the hysteresis comparison module provided in the embodiment of the present invention, when it is determined that the temperature detection voltage is greater than the upper limit voltage, the first comparator outputs a low level signal; the ninth P-type transistor is controlled to be conducted by the low-level signal output by the first comparator so as to output a high-level signal of a power supply voltage end; and a high level signal output by the ninth P-type transistor is output after passing through the second phase inverter and the first phase inverter, the high level signal is a high-temperature alarm signal, and the temperature of the device to be detected on the surface exceeds a set temperature and needs to be processed in time. If the temperature detection voltage is judged to be higher than the upper limit voltage, the temperature of the device to be detected is changed from high to low, so that the temperature detection voltage is changed from high to low, until the temperature detection voltage is judged to be lower than the lower limit voltage, the hysteresis comparison module keeps outputting a high-temperature alarm signal, and the second inverter and the third inverter form a signal latch circuit; and when the temperature detection voltage is judged to be lower than the lower limit voltage, the first comparator and the second comparator both output high level signals, so that the second N-type transistor and the third N-type transistor are controlled to be conducted, and the low level signal of the ground end GND is transmitted to the second inverter and the first inverter for output, namely the low level signal is the high temperature alarm signal. If the temperature detection voltage is judged to be smaller than the lower limit voltage, the temperature of the device to be detected is changed from low to high, so that the temperature detection voltage is changed from small to large, until the temperature detection voltage is judged to be larger than the upper limit voltage again, the hysteresis comparison module keeps outputting a high-temperature alarm signal until the temperature detection voltage is judged to be larger than the upper limit voltage again, and the process is circulated again.
Further, as shown in fig. 2, the current generating module 100, the SiC-MOSFET temperature sensing module 200, and the hysteresis comparing module 400 according to the embodiment of the present invention are all connected to an enable control terminal EN. That is, the first operational amplifier OPAM1, the second operational amplifier OPAM2, the first comparator COMP1 and the second comparator COMP2 provided in the embodiment of the present invention are all connected to an enable control terminal EN, and further, the temperature detection circuit can be periodically turned on/off by controlling the enable control terminal EN, so as to achieve the purpose of saving power consumption.
Correspondingly, the embodiment of the invention also provides electronic equipment, and the electronic equipment comprises the temperature detection circuit of the SiC-MOSFET provided by any one of the embodiments.
Optionally, the electronic device provided by the embodiment of the invention can be applied to vehicles or other scenes. The vehicle may be a new energy automobile, and the invention is not particularly limited.
The embodiment of the invention provides a temperature detection circuit based on a SiC-MOSFET and an electronic device, comprising: the current generation module comprises a detection current output branch circuit for outputting detection current and a reference current output branch circuit for outputting reference current; the SiC-MOSFET temperature sensing module is connected to the detection current and is used for generating temperature detection voltage according to the temperature of the device to be detected and the detection current; the gate voltage generating module is connected to the reference current and generates an upper limit voltage and a lower limit voltage according to the reference current, wherein the upper limit voltage is greater than the lower limit voltage; and the hysteresis comparison module is connected with the temperature detection voltage, the upper limit voltage and the lower limit voltage, and is used for outputting a high-temperature alarm signal when judging that the temperature detection voltage is greater than the upper limit voltage until the hysteresis comparison module judges that the temperature detection voltage is less than the lower limit voltage, and outputting a high-temperature alarm signal for removing.
As can be seen from the above, in the technical scheme provided by the embodiment of the invention, on the basis of temperature detection of the device to be detected, the detection current is converted into the temperature detection voltage through the SiC-MOSFET temperature sensing module, so that the dependence of the temperature detection circuit on the current can be reduced, and the detection accuracy can be improved. And the hysteresis comparison module compares the upper limit voltage and the lower limit voltage with the temperature detection voltage to equivalently generate a temperature hysteresis space through the upper limit voltage and the lower limit voltage, so that the situation that the temperature detection circuit frequently and alternately outputs a high-temperature alarm signal and releases the high-temperature alarm signal is avoided.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A SiC-MOSFET based temperature sensing circuit, comprising:
the current generation module comprises a detection current output branch circuit for outputting detection current and a reference current output branch circuit for outputting reference current;
the SiC-MOSFET temperature sensing module is connected to the detection current and is used for generating temperature detection voltage according to the temperature of the device to be detected and the detection current;
the gate voltage generating module is connected to the reference current and generates an upper limit voltage and a lower limit voltage according to the reference current, wherein the upper limit voltage is greater than the lower limit voltage;
the hysteresis comparison module is connected with the temperature detection voltage, the upper limit voltage and the lower limit voltage, and is used for outputting a high-temperature alarm signal when judging that the temperature detection voltage is greater than the upper limit voltage and outputting a high-temperature alarm removing signal until the hysteresis comparison module judges that the temperature detection voltage is less than the lower limit voltage;
the SiC-MOSFET temperature sensing module comprises: the circuit comprises a first N-type SiC-MOSFET, a second N-type SiC-MOSFET, a first operational amplifier, a first resistor, a second resistor, a third resistor and a fourth resistor; the detection current comprises a first sub-detection current and a second sub-detection current, the second sub-detection current is N times of the first sub-detection current, and N is an integer greater than 1;
the grid electrode, the substrate and the source electrode of the first N-type SiC-MOSFET are connected to the first sub-detection current, the drain electrode of the first N-type SiC-MOSFET is connected with a grounding terminal, the grid electrode of the first N-type SiC-MOSFET is connected with the first end of the first resistor, the second end of the first resistor is connected with the in-phase end of the first operational amplifier and the first end of the second resistor, and the second end of the second resistor is connected with the grounding terminal;
the grid electrode, the substrate and the source electrode of the second N-type SiC-MOSFET are connected to the second sub-detection current, the drain electrode of the second N-type SiC-MOSFET is connected with the grounding end, the grid electrode of the second N-type SiC-MOSFET is connected with the first end of the third resistor, the second end of the third resistor is connected with the inverting end of the first operational amplifier and the first end of the fourth resistor, the second end of the fourth resistor is connected with the output end of the first operational amplifier, and the output end of the first operational amplifier is used for outputting temperature detection voltage.
2. The SiC-MOSFET temperature detection circuit of claim 1, wherein the device under test is a SiC-based chip, and wherein the first N-type SiC-MOSFET and the second N-type SiC-MOSFET are both integrated in the SiC-based chip.
3. The temperature sensing circuit of a SiC-MOSFET of claim 1, wherein the current generation module comprises: a reference current generation submodule and a mirror current submodule;
the reference current generation submodule is used for generating a reference current;
and the mirror current submodule is used for mirroring the reference current to generate the first sub-detection current, the second sub-detection current and the reference current, wherein the first sub-detection current and the reference current are the same as the reference current.
4. The SiC-MOSFET temperature detection circuit of claim 3, wherein the reference current generation submodule comprises: the second operational amplifier, the first N-type transistor and the fifth resistor;
the non-inverting terminal of the second operational amplifier is connected with the reference voltage, the inverting terminal of the second operational amplifier is connected with the first terminal of the fifth resistor, the substrate and the source electrode of the first N-type transistor, the output terminal of the second operational amplifier is connected with the grid electrode of the first N-type transistor, the second terminal of the fifth resistor is connected with the grounding terminal, and the drain electrode of the first N-type transistor outputs the reference current and is connected with the mirror current source submodule.
5. The SiC-MOSFET temperature sensing circuit of claim 3, wherein the mirror current submodule comprises: a first P-type transistor, a second P-type transistor, a third P-type transistor, a fourth P-type transistor, a fifth P-type transistor, a sixth P-type transistor, a seventh P-type transistor, and an eighth P-type transistor;
the source electrode and the substrate of the first P-type transistor are connected with a power supply voltage end, the grid electrode and the drain electrode of the first P-type transistor are connected with the source electrode of the second P-type transistor, the substrate of the second P-type transistor is connected with the power supply voltage end, and the grid electrode and the drain electrode of the second P-type transistor are connected with the reference current;
the source electrode and the substrate of the third P-type transistor are connected with a power supply voltage end, the grid electrode of the third P-type transistor is connected with the grid electrode of the first P-type transistor, the drain electrode of the third P-type transistor is connected with the source electrode of the fourth P-type transistor, the substrate of the fourth P-type transistor is connected with the power supply voltage end, the grid electrode of the fourth P-type transistor is connected with the grid electrode of the second P-type transistor, and the drain electrode of the fourth P-type transistor outputs the first sub-detection current;
the source electrode and the substrate of the fifth P-type transistor are connected with a power supply voltage end, the grid electrode of the fifth P-type transistor is connected with the grid electrode of the first P-type transistor, the drain electrode of the fifth P-type transistor is connected with the source electrode of the sixth P-type transistor, the substrate of the sixth P-type transistor is connected with the power supply voltage end, the grid electrode of the sixth P-type transistor is connected with the grid electrode of the second P-type transistor, and the drain electrode of the sixth P-type transistor outputs the second sub-detection current;
the source electrode and the substrate of the seventh P-type transistor are connected with a power supply voltage end, the grid electrode of the seventh P-type transistor is connected with the grid electrode of the first P-type transistor, the drain electrode of the seventh P-type transistor is connected with the source electrode of the eighth P-type transistor, the substrate of the eighth P-type transistor is connected with the power supply voltage end, the grid electrode of the eighth P-type transistor is connected with the grid electrode of the second P-type transistor, and the drain electrode of the eighth P-type transistor outputs the reference current.
6. The temperature sensing circuit of a SiC-MOSFET of claim 1, wherein the gate voltage generating module comprises: a sixth resistor, a seventh resistor, and an eighth resistor;
the first end of the sixth resistor is connected to the reference current, the second end of the sixth resistor is connected to the first end of the seventh resistor, the second end of the seventh resistor is connected to the first end of the eighth resistor, the second end of the eighth resistor is connected to the ground terminal, the second end of the sixth resistor outputs the upper limit voltage, and the second end of the seventh resistor outputs the lower limit voltage.
7. The SiC-MOSFET temperature detection circuit of claim 1, wherein the hysteresis comparison module comprises: the circuit comprises a first comparator, a second comparator, an RS trigger latch and a first inverter;
the temperature detection circuit comprises a first comparator, a second comparator, an RS trigger latch, a temperature detection voltage, an RS trigger latch, a first inverter and a second inverter, wherein the same-phase end of the first comparator and the second comparator is connected into the temperature detection voltage, the inverting end of the first comparator is connected into the upper limit voltage, the inverting end of the second comparator is connected into the lower limit voltage, the output end of the first comparator is connected with the first input end of the RS trigger latch, the output end of the second comparator is connected with the second input end of the RS trigger latch, the output end of the RS trigger latch is connected with the input end of the first inverter, and the output end of the first inverter is used for outputting the high-temperature alarm signal or relieving the high-temperature alarm signal.
8. The SiC-MOSFET temperature detection circuit of claim 1, wherein the current generation module, the SiC-MOSFET temperature sensing module and the hysteresis comparison module are all connected with an enable control terminal.
9. An electronic device characterized in that it comprises a temperature detection circuit of a SiC-MOSFET according to any of claims 1-8.
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