CN112038482A - 压电复合薄膜及其制备方法、以及压电传感器 - Google Patents
压电复合薄膜及其制备方法、以及压电传感器 Download PDFInfo
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- CN112038482A CN112038482A CN202010875781.4A CN202010875781A CN112038482A CN 112038482 A CN112038482 A CN 112038482A CN 202010875781 A CN202010875781 A CN 202010875781A CN 112038482 A CN112038482 A CN 112038482A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/092—Forming composite materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
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- Chemical & Material Sciences (AREA)
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- Compositions Of Macromolecular Compounds (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010875781.4A CN112038482A (zh) | 2020-08-27 | 2020-08-27 | 压电复合薄膜及其制备方法、以及压电传感器 |
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CN202010875781.4A CN112038482A (zh) | 2020-08-27 | 2020-08-27 | 压电复合薄膜及其制备方法、以及压电传感器 |
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CN112038482A true CN112038482A (zh) | 2020-12-04 |
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CN202010875781.4A Withdrawn CN112038482A (zh) | 2020-08-27 | 2020-08-27 | 压电复合薄膜及其制备方法、以及压电传感器 |
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CN (1) | CN112038482A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112563407A (zh) * | 2020-12-08 | 2021-03-26 | 之江实验室 | 一种基于PVDF-TrFE的复合压电材料的制备方法 |
CN116072072A (zh) * | 2023-03-30 | 2023-05-05 | 惠科股份有限公司 | 显示面板及显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102485641A (zh) * | 2010-12-06 | 2012-06-06 | 中国科学院沈阳自动化研究所 | 面向ZnO压电传感器制造的介电泳装配方法 |
CN105185899A (zh) * | 2015-09-23 | 2015-12-23 | 苏州攀特电陶科技股份有限公司 | 压电陶瓷聚合物复合材料的制备方法 |
CN108801510A (zh) * | 2018-06-28 | 2018-11-13 | 北京工业大学 | 一种填料取向排列的柔性压电传感器用复合材料及制备方法 |
US20190207079A1 (en) * | 2016-08-08 | 2019-07-04 | Sabic Global Technologies, B.V. | Fabrication of Piezoelectric Composites Using High Temperature Dielectrophoresis Technique |
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2020
- 2020-08-27 CN CN202010875781.4A patent/CN112038482A/zh not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102485641A (zh) * | 2010-12-06 | 2012-06-06 | 中国科学院沈阳自动化研究所 | 面向ZnO压电传感器制造的介电泳装配方法 |
CN105185899A (zh) * | 2015-09-23 | 2015-12-23 | 苏州攀特电陶科技股份有限公司 | 压电陶瓷聚合物复合材料的制备方法 |
US20190207079A1 (en) * | 2016-08-08 | 2019-07-04 | Sabic Global Technologies, B.V. | Fabrication of Piezoelectric Composites Using High Temperature Dielectrophoresis Technique |
CN108801510A (zh) * | 2018-06-28 | 2018-11-13 | 北京工业大学 | 一种填料取向排列的柔性压电传感器用复合材料及制备方法 |
Non-Patent Citations (1)
Title |
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CAIXIA HU, ET AL.: "《A Transparent Antipeep Piezoelectric Nanogenerator to Harvest Tapping Energy on Screen》", 《SMALL》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112563407A (zh) * | 2020-12-08 | 2021-03-26 | 之江实验室 | 一种基于PVDF-TrFE的复合压电材料的制备方法 |
CN116072072A (zh) * | 2023-03-30 | 2023-05-05 | 惠科股份有限公司 | 显示面板及显示装置 |
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Address after: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant after: Jiangxi OMS Microelectronics Co.,Ltd. Applicant after: Ophiguang Group Co.,Ltd. Address before: 330000 east of Xueyuan 6th Road, south of Tianxiang Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant before: OFilm Microelectronics Technology Co.,Ltd. Applicant before: Ophiguang Group Co.,Ltd. |
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Effective date of registration: 20210621 Address after: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant after: Jiangxi OMS Microelectronics Co.,Ltd. Address before: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant before: Jiangxi OMS Microelectronics Co.,Ltd. Applicant before: Ophiguang Group Co.,Ltd. |
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Application publication date: 20201204 |
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