CN112038261A - Substrate drying device - Google Patents
Substrate drying device Download PDFInfo
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- CN112038261A CN112038261A CN202010501307.5A CN202010501307A CN112038261A CN 112038261 A CN112038261 A CN 112038261A CN 202010501307 A CN202010501307 A CN 202010501307A CN 112038261 A CN112038261 A CN 112038261A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
Abstract
The present invention relates to a substrate drying apparatus, comprising: a chamber providing a drying space for drying the substrate; a supercritical fluid generation and storage unit that generates and stores a supercritical fluid supplied to the drying space within the chamber; and a supercritical fluid supply regulation unit installed in a supply line between the supercritical fluid generation and storage unit and the chamber and regulating the supercritical fluid stored in the supercritical fluid generation and storage unit to be supplied to the chamber, wherein the supercritical fluid supply regulation unit includes: the supercritical fluid generation and storage apparatus includes a main opening and closing valve that determines whether to supply a supercritical fluid stored in a supercritical fluid generation and storage unit, a metering valve that adjusts a flow rate of the supercritical fluid passing through the main opening and closing valve, and an orifice that is installed between the main opening and closing valve and the metering valve and reduces a differential pressure applied to the metering valve by the supercritical fluid passing through the main opening and closing valve.
Description
Technical Field
The present invention relates to a substrate drying apparatus. More particularly, the present invention relates to a substrate drying apparatus in which a supercritical fluid is supplied to a drying chamber under the same conditions at a certain pressurization speed in each process, thereby improving the drying efficiency of a substrate using the supercritical fluid; an orifice installed at a front end of the metering valve of the supply line, which constantly buffers the flow of the supercritical fluid when the supercritical fluid is supplied to the substrate drying chamber, thereby preventing flow fluctuation of the metering valve adjusting the flow rate to provide a pressurizing speed of the supercritical fluid under the same condition in each process; and it is possible to prevent damage to the metering valve due to a high pressure difference generated in the metering valve during rapid pressurization, thereby extending the life of the valve to prevent maintenance loss of the apparatus due to stoppage or the like.
Background
A process of manufacturing a semiconductor device includes various processes such as a photolithography process, an etching process, and an ion implantation process. After each process is completed and before a subsequent process is performed, a cleaning process and a drying process for removing impurities and residues remaining on the surface of the wafer are performed to clean the surface of the wafer.
For example, in a wafer cleaning process after an etching process, a chemical liquid for the cleaning process is supplied to a surface of a wafer, and then, deionized water (DIW) is supplied to perform a rinsing process. After the rinsing process, a drying process for drying the wafer by removing DIW remaining on the surface of the wafer is performed.
As a method of performing the drying process, for example, a technique of drying a wafer by replacing DIW on the wafer with isopropyl alcohol (IPA) is known.
However, according to the conventional technique for drying a wafer, as shown in fig. 1, there has been a problem in that a pattern formed on the wafer collapses due to the surface tension of liquid, i.e., IPA, during the drying process.
To solve this problem, a supercritical drying technique with zero surface tension has been proposed.
According to the supercritical drying technique, carbon dioxide (CO) in a supercritical state is added2) When supplied to a wafer whose surface is wetted with IPA in the chamber, IPA on the wafer is dissolved in supercritical CO2In a fluid. Subsequently, supercritical CO with IPA dissolved therein can be introduced2The fluid is gradually drained from the chamber to dry the wafer without collapsing the patternAnd (5) sinking.
The supercritical drying process includes a pressurization operation of supplying a supercritical fluid into the chamber at the start of the process, a drying operation of dissolving IPA in the supercritical fluid to discharge IPA by a rinsing process of repeatedly increasing and decreasing pressures having a pressure range greater than or equal to the critical point, and a decompression operation performed after the completion of drying.
Meanwhile, the pressurizing operation of supplying the supercritical fluid into the chamber to perform the supercritical drying process occupies about 30% of the total processing time, and a rapid pressurizing speed is required to reduce the processing time.
Problems occurring during the rapid pressurization according to the conventional supercritical drying technique will be described with reference to fig. 2, which fig. 2 shows a related art disclosed in korean patent application laid-open No. 10-2016-.
Referring to fig. 2, the related art uses a method of controlling a supply flow rate (pressurization speed) of a supercritical fluid, which is supplied from a supply tank 4850 by opening and closing valves 4810a and 4820a and a supply line 4800 using flow valves 4810b and 4820 b. In this case, hammering occurs due to a high pressure difference (i.e., a pressure difference at the flow valves 4810b and 4820b during rapid pressurization), causing flow fluctuations (that is, the valve adjustment handles of the flow valves are slightly distorted by impact), resulting in difficulty in maintaining a desired pressurization speed.
In addition, the life of the flow valves 4810b and 4820b may be shortened due to damage to the flow valves 4810b and 4820b, possibly resulting in losses.
Fig. 3 illustrates a chamber for processing a substrate disclosed in korean patent laid-open publication No. 10-2017-0137243, which is a related art with respect to a substrate processing apparatus using a supercritical fluid.
Referring to fig. 3, in the process of removing the organic solvent in the supercritical drying process, the organic solvent may be introduced between the coupling surfaces of the upper body 430 and the lower body 420 constituting the high pressure chamber 410 and contacting each other. As described above, the organic solvent introduced between the coupling surfaces of the upper and lower bodies 430 and 420 becomes particles and accumulates around the coupling surfaces.
After the supercritical drying process is completed, the chamber is opened to unload the processed substrate to the outside, in which case particles around the coupling surfaces of the upper and lower bodies 430 and 420 may be introduced into the chamber due to a difference between the internal and external pressures of the chamber.
According to korean patent laid-open No. 10-2017-0137243, since the substrate is positioned at a lower level than the coupling surfaces of the upper and lower bodies 430 and 420, some particles are most likely to be introduced onto the substrate due to gravity during introduction of the particles adjacent to the coupling surfaces of the upper and lower bodies 430 and 420 of the substrate into the chamber.
As described above, since particles introduced onto the substrate cause process defects, it is necessary to additionally install a blocking film around the coupling surface of the upper and lower bodies 430 and 420 to prevent the inflow of particles. Therefore, there is a problem that the entire structure of the apparatus is complicated.
In addition, according to the related art including korean patent laid-open No. 10-2017-0137243, since the lower supply port 422 for supplying the supercritical fluid for initial pressurization and the discharge port 426 for discharging the supercritical fluid after drying are not positioned at the center of the lower body 420, an asymmetric flow is formed when supplying and discharging the fluid. Therefore, it is difficult to uniformly disperse the supercritical fluid into the chamber for supply and discharge, resulting in a decrease in drying efficiency.
[ related Art document ]
[ patent documents ]
(patent document 1) Korean patent laid-open No. 10-2016-0135035 (published: 2016: 11/24/2016; title: apparatus and method for drying substrates)
(patent document 2) korean patent laid-open publication No. 10-2017-0137243 (published: 12/13/2017, title: apparatus and method for processing substrate)
Disclosure of Invention
1. Technical problem
The technical object of the present invention is to supply a supercritical fluid to a drying chamber at a certain pressurization speed under the same conditions in each process, thereby improving the drying efficiency of a substrate using the supercritical fluid.
Another technical object of the present invention is to install an orifice at a front end of a metering valve of a supply line, the orifice constantly buffering a flow of a supercritical fluid when the supercritical fluid is supplied to a substrate drying chamber, thereby preventing flow fluctuation of the metering valve adjusting a flow rate to provide a pressurization speed of the supercritical fluid under the same condition in each process.
It is still another technical object of the present invention to prevent damage to a metering valve due to a high differential pressure generated in the metering valve during rapid pressurization, thereby extending the life of the valve to prevent loss of maintenance of an apparatus due to shutdown or the like.
It is still another technical object of the present invention to guide a symmetric flow during the supply and discharge of a supercritical fluid to uniformly disperse the supercritical fluid into a chamber for supply and discharge by providing a supply path of the supercritical fluid for initial pressurization and a discharge path of a mixed fluid in which an organic solvent formed on a substrate after drying is dissolved in the supercritical fluid for drying by using one integrated supply and discharge port, thereby improving the drying efficiency of the substrate.
It is still another technical object of the present invention to use a substrate placing plate, which is basically required for arranging a substrate, to prevent re-introduction of particles when a chamber is opened after a drying process is completed, to prevent particles contained in a supercritical fluid for initial pressurization from being accumulated on the substrate or to reduce the accumulation amount thereof by preventing the supercritical fluid for initial pressurization from directly flowing to the surface of the substrate at the start of the drying process, and to reduce a drying time by reducing a working volume of the chamber by reducing a volume occupied by the substrate placing plate, thereby preventing collapse of a pattern formed on the substrate.
Still another technical object of the present invention is to arrange a base plate on a base plate placing plate so as to be positioned at a higher position than coupling surfaces of a lower case and an upper case, thereby preventing particles disposed around a sealing portion between the coupling surfaces of the lower case and the upper case from being introduced onto the base plate due to gravity caused by a height difference between the base plate and the coupling surfaces when a drying process is completed and the lower case and the upper case are opened.
2. Technical scheme
The substrate drying apparatus according to the present invention includes: a chamber providing a drying space for drying the substrate; a supercritical fluid generation and storage unit that generates and stores a supercritical fluid supplied to the drying space within the chamber; and a supercritical fluid supply regulation unit installed in a supply line between the supercritical fluid generation and storage unit and the chamber and regulating the supercritical fluid stored in the supercritical fluid generation and storage unit to be supplied to the chamber, wherein the supercritical fluid supply regulation unit includes: the supercritical fluid generation and storage apparatus includes a main opening and closing valve that determines whether to supply a supercritical fluid stored in a supercritical fluid generation and storage unit, a metering valve that adjusts a flow rate of the supercritical fluid passing through the main opening and closing valve, and an orifice that is installed between the main opening and closing valve and the metering valve and reduces a differential pressure applied to the metering valve by the supercritical fluid passing through the main opening and closing valve.
The substrate drying apparatus according to the present invention is characterized in that, when the supercritical fluid passing through the main opening and closing valve passes through the orifice, the flow of the supercritical fluid can be buffered, so that the flow rate fluctuation of the supercritical fluid passing through the metering valve is suppressed.
The substrate drying apparatus according to the present invention may further include a first branch line branching from a first point of the supply line at the rear end of the supercritical fluid supply regulation unit and providing a path through which the supercritical fluid for initial pressurization passing through the supercritical fluid supply regulation unit is supplied to the drying space within the chamber through an integrated supply and exhaust port formed in the side surface of the chamber; and a second branch line branching off from the first point and providing a path through which the supercritical fluid for drying passing through the supercritical fluid supply regulation unit is supplied to the drying space within the chamber through an upper supply port formed in an upper surface of the chamber.
The substrate drying apparatus according to the present invention may further include a heater unit installed in the supply line between the metering valve and the first point and heating the supercritical fluid passing through the metering valve.
The substrate drying apparatus according to the present invention may be characterized in that the chamber may include: an upper housing; a lower case coupled to the upper case to be openable or closable; and a substrate placing plate coupled to a bottom surface of the lower case and on which the substrate on which the organic solvent is formed is disposed, the integrated supply and discharge port is formed to extend from one side surface to the other side surface of the lower case, is formed to place the board toward the substrate in an intermediate region between the one side surface and the other side surface, and provides a path, through which the supercritical fluid for initial pressurization supplied through the supply line and the first branch line is supplied into the chamber, and a path is provided, through which a mixed fluid in which the organic solvent is dissolved in the supercritical fluid for drying after drying is discharged, and the upper supply port is formed to place the board toward the substrate in a middle region of the upper housing, and to provide a path, through which the supercritical fluid for drying supplied through the supply line and the second branch line is supplied into the chamber.
The substrate drying apparatus according to the present invention may further include an initial pressurization opening and closing valve installed in the first branch line between the metering valve and the integrated supply and discharge port, and determining whether to supply the supercritical fluid for initial pressurization; a dry open-close valve installed in the second branch line between the metering valve and the upper supply port and determining whether to supply the supercritical fluid for drying; and a discharge open-close valve installed in a discharge line connected to the integrated supply and discharge port, and determining whether to discharge the mixed fluid.
The substrate drying apparatus according to the present invention may be characterized in that the integrated supply and discharge port may include a first pipe line formed to extend from one side of the lower case to a middle region of the lower case, a common port formed to communicate with the first pipe line in the middle region and to place the board toward the substrate, and a second pipe line formed to communicate with the common port and the first pipe line in the middle region and to extend to the other side of the lower case.
The substrate drying apparatus according to the present invention is characterized in that the first line and the common port may provide a supply path for the initially pressurized supercritical fluid, and the common port and the second line may provide an exhaust path for the mixed fluid.
The substrate drying apparatus according to the present invention may be characterized in that the chamber may further include a sealing part disposed between coupling surfaces of the lower and upper cases, wherein the substrate is disposed on the substrate placing plate to be positioned at a higher level than the coupling surfaces of the lower and upper cases, and particles disposed around the sealing part between the coupling surfaces are prevented from being introduced onto the substrate due to gravity generated by a height difference between the substrate and the coupling surfaces when the drying process is completed and the lower and upper cases are opened.
The substrate drying apparatus according to the present invention is characterized in that the supercritical fluid for initial pressurization supplied through the first line and the common port may be blocked by the substrate placing plate to prevent being directly injected onto the substrate.
The substrate drying apparatus according to the present invention may be characterized in that the chamber may further include a substrate placing plate supporting part having one end coupled to the bottom surface of the lower case and the other end coupled to and supporting the substrate placing plate to space the substrate placing plate from the bottom surface of the lower case.
The substrate drying apparatus according to the present invention is characterized in that the first partitioned space existing between the bottom surface of the lower housing and the substrate placing plate due to the substrate placing plate supporting part may guide the supercritical fluid for initial pressurization supplied through the integrated supply and discharge port to move along the lower surface of the substrate placing plate and gradually diffuse into the processing region where the substrate is disposed.
The substrate drying apparatus according to the present invention may be characterized in that the chamber may further include a substrate supporting part having one end coupled to the upper surface of the substrate placing plate and the other end coupled to the substrate and supporting the substrate to be spaced apart from the upper surface of the substrate placing plate.
The substrate drying apparatus according to the present invention is characterized in that the second partition space existing between the upper surface of the substrate mounting plate and the substrate due to the substrate supporting part may reduce the time of the drying process by exposing the lower surface of the substrate to the supercritical fluid for initial pressurization supplied through the integrated supply and exhaust port and the supercritical fluid for drying supplied through the upper supply port.
3. Advantageous effects
According to the present invention, it is possible to supply a supercritical fluid to a drying chamber at a certain pressurization speed under the same condition in each process, thereby improving the drying efficiency of a substrate using the supercritical fluid.
In addition, an orifice is installed at a front end of the metering valve of the supply line, which constantly buffers the flow of the supercritical fluid when the supercritical fluid is supplied to the substrate drying chamber, thereby preventing flow fluctuation of the metering valve adjusting the flow rate to provide a pressurization speed of the supercritical fluid under the same condition in each process.
Further, it is possible to prevent damage to the metering valve due to a high differential pressure generated in the metering valve during rapid pressurization, thereby extending the life of the valve to prevent loss of maintenance of the apparatus due to stoppage or the like.
In addition, since a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate after drying is dissolved are provided using one integrated supply and discharge port, it is possible to guide a symmetrical flow during the supply and discharge of the supercritical fluid to uniformly disperse the supercritical fluid into the chamber for supply and discharge, thereby improving the drying efficiency of the substrate.
Further, by using the substrate placement plate necessary for disposing the substrate, re-entry of particles can be prevented when the chamber is opened after completion of the drying process, collapse of a pattern formed on the substrate can be prevented by preventing the supercritical fluid for initial pressurization from directly flowing to the substrate surface at the start of the drying process, accumulation of particles contained in the supercritical fluid for initial pressurization can be prevented on the substrate or the amount of accumulation thereof can be reduced, and drying time can be reduced by reducing the working volume of the chamber due to the volume occupied by the substrate placement plate.
In addition, the substrate is placed on the substrate placing plate so as to be positioned at a higher level than the coupling surfaces of the lower and upper cases, thereby preventing particles disposed around the sealing portion between the coupling surfaces of the lower and upper cases from being introduced onto the substrate due to gravity caused by a height difference between the substrate and the coupling surfaces when the drying process is completed and the lower and upper cases are opened.
Drawings
Fig. 1 shows a view illustrating a pattern collapse phenomenon occurring during drying of a substrate according to the related art.
Fig. 2 is a view illustrating a conventional substrate drying apparatus.
Fig. 3 is a view illustrating a conventional substrate drying chamber.
Fig. 4 is a view illustrating a substrate drying apparatus according to an embodiment of the present invention.
Fig. 5 is a view showing operation timings of valves constituting a substrate drying apparatus according to an embodiment of the present invention.
Fig. 6 is a view showing an exemplary configuration of a chamber constituting a substrate drying apparatus according to an embodiment of the present invention.
Fig. 7 is a view illustrating a diffusion path of a supercritical fluid for initial pressurization according to an embodiment of the present invention.
Fig. 8 is a view illustrating a diffusion path of a supercritical fluid for drying according to an embodiment of the present invention.
Fig. 9 is a view illustrating a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid for drying, according to an embodiment of the present invention.
Fig. 10 is a view for describing a principle in which particles existing in and around the sealing portion between the coupling surfaces of the upper and lower cases are prevented from being introduced onto the substrate when the drying process is completed and the lower and upper cases are opened.
Detailed Description
Since the specific structural or functional description of the embodiments according to the inventive concept disclosed herein is merely exemplary for the purpose of describing the embodiments according to the inventive concept, the embodiments according to the inventive concept may be embodied in various forms without being limited to the embodiments described herein.
While embodiments of the invention are susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intention to limit the invention to the specific forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention.
It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a similar manner (i.e., "between" and "directly between," "adjacent" and "directly adjacent," etc.).
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 4 is a view showing a substrate drying apparatus according to an embodiment of the present invention, and fig. 6 is a view showing an exemplary configuration of a chamber constituting the substrate drying apparatus according to an embodiment of the present invention.
Referring to fig. 4 and 6, the substrate drying apparatus 1 according to one embodiment of the present invention includes a chamber 10, a supercritical fluid generation and storage unit 100, a supercritical fluid supply regulation unit 200, an initial pressurization on-off valve 240, a drying on-off valve 250, a discharge on-off valve 260, a heater unit 270, a first branch line DL1, and a second branch line DL 2.
The chamber 10 is a part that provides a drying space for drying the substrate. Specific and exemplary configurations of the chamber 10 will be described in detail below with additional reference to fig. 6.
The supercritical fluid generation and storage unit 100 is a part that generates and stores the supercritical fluid supplied to the drying space within the chamber 10.
The supercritical fluid supply regulation unit 200 is a part that is installed in the supply line PL between the supercritical fluid generation and storage unit 100 and the chamber 10 and regulates the supercritical fluid stored in the supercritical fluid generation and storage unit 100 to be supplied to the chamber 10.
For example, the supercritical fluid supply regulation unit 200 may include a main opening and closing valve 210, a metering valve 220, and an orifice 230.
In fig. 4, the supercritical fluid supply regulation unit 200 is shown to include one main opening and closing valve 210, one metering valve 220, and one orifice 230, but this is merely an example. A plurality of main opening and closing valves 210, a plurality of metering valves 220, and a plurality of orifices 230, which constitute the supercritical fluid supply regulation unit 200, may be provided. In addition, for example, the opening degrees of the plurality of metering valves 220 may be different. As a specific example, when four metering valves 220 are provided, the opening rates of the four metering valves 220 may be 90%, 75%, 50%, and 25%, but are not limited thereto.
The main opening and closing valve 210 performs a function of determining whether to supply the supercritical fluid stored in the supercritical fluid generation and storage unit 100.
The metering valve 220 performs a function of regulating the flow rate of the supercritical fluid passing through the main opening and closing valve 210. For example, the operator may adjust the opening rate of the metering valve 220 by manually operating a valve adjustment handle provided in the main opening-closing valve 210.
The orifice 230 is installed between the main opening and closing valve 210 and the metering valve 220 to perform a function of reducing a pressure difference applied to the metering valve 220 by the supercritical fluid passing through the main opening and closing valve 210.
For example, when the supercritical fluid passing through the main opening-closing valve 210 passes through the orifice 230, the flow of the supercritical fluid can be buffered, so that the flow rate fluctuation of the supercritical fluid passing through the metering valve 220 can be suppressed.
The construction of the supercritical fluid supply regulation unit 200 will be described in more detail below.
As described in the description of the related art, according to the conventional structure in which the orifice 230 is not present between the main opening and closing valve 210 and the metering valve 220, due to a high pressure difference (i.e., a pressure difference at the metering valve 220 during rapid pressurization), a valve adjustment handle provided in the metering valve 220 is slightly distorted by hammer blow, thereby causing flow fluctuation, thereby causing difficulty in maintaining a desired pressurization speed. In addition, a loss may be caused by a reduction in the life of the metering valve 220 due to damage to the metering valve 220, i.e., a loss in maintenance of the apparatus due to a shutdown or the like, including replacement of the damaged metering valve 220 or the like.
However, according to an embodiment of the present invention, in which the orifice 230 is installed between the main opening and closing valve 210 and the metering valve 220, the orifice 230 reduces the pressure difference applied to the metering valve 220 by the supercritical fluid passing through the main opening and closing valve 210, and the flow of the supercritical fluid passing through the metering valve 220 is buffered when the supercritical fluid passes through the orifice 230. Therefore, the flow fluctuation of the supercritical fluid passing through the metering valve 220 can be suppressed.
According to such a configuration of the present invention, since the orifice 230, which constantly buffers the flow of the supercritical fluid when supplying the supercritical fluid to the chamber 10, is installed at the front end of the metering valve 220 of the supply line PL, it is possible to prevent flow fluctuation of the metering valve 220, which regulates the flow rate, to constantly provide the pressurizing rate of the supercritical fluid under the same conditions in each process. In addition, it is possible to prevent the metering valve 220 from being damaged due to a high differential pressure generated in the metering valve 220 during rapid pressurization to increase the life of the valve, thereby preventing maintenance loss of the apparatus due to shutdown or the like.
The first branch line DL1 branches from a first point P1 of the supply line PL located at the rear end of the supercritical fluid supply regulation unit 200, and provides a path through which the supercritical fluid for initial pressurization passing through the supercritical fluid supply regulation unit 200 is supplied to the drying space within the chamber 10 through an integrated supply and exhaust port formed in the side of the chamber 10.
The second branch line DL2 branches from the first point P1 and provides a path through which the supercritical fluid for drying passing through the supercritical fluid supply regulation unit 200 is supplied to the drying space within the chamber 10 through an upper supply port formed in the upper surface of the chamber 10.
The heater unit 270 is installed in the supply line PL between the metering valve 220 and the first point P1, and performs a function of heating the supercritical fluid passing through the metering valve 220. When the supercritical fluid stored in the supercritical fluid generation and storage unit 100 passes through the supply line PL, the first branch line DL1, the second branch line DL2, and components such as valves provided in the lines, a phase change may occur in which the supercritical fluid changes from a supercritical state to a liquid phase or a gas phase due to a temperature drop caused by heat loss, and thus the heater unit 270 may perform a function of heating the supercritical fluid to prevent the phase change.
The initial pressurizing on-off valve 240 is installed in the first branch line DL1 between the metering valve 220 and the integrated supply and discharge port, and performs a function of determining whether to supply the supercritical fluid for initial pressurization.
The dry opening and closing valve 250 is installed in the second branch line DL2 between the metering valve 220 and the upper supply port, and performs a function of determining whether to supply the supercritical fluid for drying.
The discharge opening and closing valve 260 is installed in the discharge line EL connected to the integrated supply and discharge port, and performs a function of determining whether to discharge a mixed fluid in which the organic solvent on the dried substrate is dissolved in the supercritical fluid for drying.
As shown in fig. 6, the chamber 10 may include an upper case 12, a lower case 14 connected to the upper case 12 to be openable and closable, and a substrate placing plate 40 connected to a bottom surface of the lower case 14, and on which a substrate on which an organic solvent is formed is disposed.
For example, the integrated supply and discharge port may be formed to extend from one side surface to the other side surface of the lower case 14, and may be formed to place the board 40 toward the substrate in an intermediate region between the one side surface and the other side surface, and may be formed to provide a path through which the supercritical fluid for initial pressurization supplied through the supply line PL and the first branch line DL1 is supplied into the chamber 10, and a path through which a mixed fluid in which the organic solvent on the substrate is dissolved in the supercritical fluid for drying after drying is discharged.
In addition, for example, the upper supply port may be formed to place the board 40 toward the substrate in the middle region of the upper case 12, and may be formed to provide a path through which the supercritical fluid for drying supplied through the supply line PL and the second branch line DL2 is supplied into the chamber 10.
Exemplary configurations of the chamber 10 will be described in more detail below.
Hereinafter, a drying process according to an embodiment of the present invention will be specifically and exemplarily described with additional reference to fig. 5, which fig. 5 is a view showing operation timings of valves constituting the substrate drying apparatus 1 of an embodiment of the present invention.
Referring to fig. 5, the drying sequence may be performed in the order of initial pressurization, rinsing, and final discharge.
First, 1) in the initial pressurization process, a supercritical fluid for initial pressurization is supplied through the first line 510 and the common port 520 constituting the integrated supply and discharge port 50 for a set initial pressurization time at a processing time and a processing pressure set to be above a critical point. For this reason, the main on-off valve 210 and the initial pressurizing on-off valve 240 are opened, and the dry on-off valve 250 and the discharge on-off valve 260 are closed.
When the initial pressurization process is completed, a process of discharging the mixed fluid in which the organic solvent is dissolved in the supercritical fluid during the initial pressurization process to the outside of the chamber 10 in a short time is performed. For this reason, the discharge on-off valve 260 is opened, and the main on-off valve 210, the initial pressurizing on-off valve 240, and the dry on-off valve 250 are closed.
Next, 2) rinsing is performed in which the supply and discharge of the mixed fluid for application to the dried supercritical fluid are repeated a set number of times.
That is, the supply of the supercritical fluid for initial pressurization is blocked, and the supercritical fluid for drying is supplied to the chamber 10 through the upper supply port 60 for a unit drying time. For this reason, the main on-off valve 210 and the dry on-off valve 250 are opened, and the initial pressurizing on-off valve 240 and the discharge on-off valve 260 are closed.
Subsequently, after the unit drying time elapses, a process of discharging the mixed fluid in which the organic fluid is dissolved in the supercritical fluid within the unit drying time to the outside of the chamber 10 within the unit discharging time is performed. For this reason, the discharge on-off valve 260 is opened, and the main on-off valve 210, the initial pressurizing on-off valve 240, and the dry on-off valve 250 are closed.
The drying process may be performed by washing in which the unit drying time and the unit discharging time are repeated a set number of times.
Then, 3) after the drying time elapses, that is, after the rinsing is completed, the supply of the supercritical fluid for drying is blocked, and the mixed fluid is finally discharged through the common port 520 and the second line 530 constituting the integrated supply and discharge port 50 for the discharge time. For this reason, the discharge on-off valve 260 is opened, and the main on-off valve 210, the initial pressurizing on-off valve 240, and the dry on-off valve 250 are closed.
In fig. 4, reference numerals 280 and 290 denote filters for filtering foreign substances included in the supercritical fluid, reference numeral P denotes a pressure sensor, and reference numeral T denotes a temperature sensor.
Hereinafter, a structure of the chamber 10, which is a component of the substrate drying apparatus 1 according to an embodiment of the present invention, will be described.
Fig. 6 is a view showing an exemplary configuration of a chamber constituting a substrate drying apparatus according to an embodiment of the present invention. Fig. 7 is a view illustrating a diffusion path of a supercritical fluid for initial pressurization according to an embodiment of the present invention. Fig. 8 is a view illustrating a diffusion path of a supercritical fluid for drying according to an embodiment of the present invention. Fig. 9 is a view illustrating a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid for drying, according to an embodiment of the present invention. Fig. 10 is a view for describing a principle in which particles existing in and around the sealing portion between the coupling surfaces of the upper and lower cases are prevented from being introduced onto the substrate when the drying process is completed and the lower and upper cases are opened.
Referring additionally to fig. 6 to 10, the chamber 10 constituting the substrate drying apparatus 1 according to one embodiment of the present invention may include an upper case 12, a lower case 14, a sealing part 30, a substrate placing plate 40, an integrated supply and discharge port 50, an upper supply port 60, a substrate placing plate support part 70, a substrate support part 80, and a case driver 90.
The upper case 12 and the lower case 14 are coupled to each other to be openable and closable and provide a space for performing a drying process. For example, the upper case 12 and the lower case 14 may be formed to have a cylindrical shape, but the present invention is not limited thereto. As described below, the upper supply port 60 is formed in the upper housing 12, and the integrated supply and discharge port 50 is formed in the lower housing 14.
The sealing part 30 is disposed between the coupling surfaces C of the lower and upper cases 14 and 12 and maintains airtightness between the coupling surfaces C of the lower and upper cases 14 and 12 to block an area inside the chamber 10 from the outside.
For example, as shown in fig. 10, which is used to describe a principle in which particles existing in the sealing part 30 between the coupling surfaces C of the upper and lower cases 12 and 14 and around the sealing part 30 are prevented from being introduced onto the substrate when the drying process is completed and the lower and upper cases 14 and 12 are opened, the substrate W is placed on the substrate placing plate 40 to be positioned at a higher level than the coupling surfaces C of the lower and upper cases 14 and 12. In this case, when the drying process is completed and the lower case 14 and the upper case 12 are opened, it is possible to prevent particles disposed around the sealing part 30 between the coupling surfaces C from being introduced onto the substrate W due to gravity caused by a height difference between the substrate W and the coupling surfaces C.
The substrate placement plate 40 is a member coupled to the bottom surface 22 of the lower case 14, and the substrate W on which the organic solvent is formed is disposed on the substrate placement plate 40.
For example, the supercritical fluid for initial pressurization supplied through the first line 510 and the common port 520 constituting the integrated supply and exhaust port 50 may be blocked by the substrate placing plate 40 to prevent direct injection onto the substrate W.
More specifically, as shown in fig. 7, which shows a diffusion path of the supercritical fluid for initial pressurization, and as shown in fig. 9, which shows a discharge path of a mixed fluid in which an organic solvent is dissolved in the supercritical fluid for drying, by using the substrate-placing plate 40, which is basically required for arranging the substrate W, as an object of the drying process, re-entry of particles can be prevented when opening the chamber 10 after the drying process is ended, collapse of a pattern formed on the substrate W can be prevented by preventing the supercritical fluid for initial pressurization from directly flowing to the surface of the substrate W, accumulation of particles contained in the supercritical fluid for initial pressurization on the substrate W or reduction of the accumulation amount thereof can be prevented, and the drying process time can be reduced by reducing the working volume of the chamber 10 due to the volume occupied by the substrate-placing plate 40.
The integrated supply and discharge port 50 is formed to extend from one side surface 24 of the lower case 14 to the other side surface 26 thereof, and is a member formed to place the plate 40 toward the substrate in the intermediate region 28 between the one side surface and the other side surface, and provides a supply path for the initially pressurized supercritical fluid and a discharge path for the mixed fluid in which the organic solvent formed on the substrate W after drying is dissolved in the supercritical fluid for drying.
As described above, since the supply path of the supercritical fluid for initial pressurization and the discharge path of the mixed fluid in which the organic solvent formed on the substrate W after drying is dissolved in the supercritical fluid for drying are provided using one integrated supply and discharge port 50, it is possible to guide a symmetrical flow during the supply and discharge of the supercritical fluid to uniformly disperse the supercritical fluid into the chamber for supply and discharge, thereby improving the drying efficiency of the substrate.
For example, the integrated supply and discharge port 50 may include a first pipe line 510 formed to extend from one side 24 of the lower case 14 to the middle region 28 of the lower case 14, a common port 520 formed to communicate with the first pipe line 510 in the middle region 28 and to face the substrate placement plate 40, and a second pipe line 530 formed to communicate with the common port 520 and the first pipe line 510 in the middle region 28 and to extend to the other side 26 of the lower case 14. The first line 510 and the common port 520 may be formed to provide a supply path for the supercritical fluid for initial pressurization, and the common port 520 and the second line 530 may be formed to provide a discharge port for the mixed fluid in which the organic solvent is dissolved in the supercritical fluid for drying.
For example, when the mixed fluid is discharged through the common port 520 and the second line 530, the pressure of the second line 530 may be maintained to be lower than that of the first line 510. According to such a configuration, since the mixed fluid may be prevented from flowing and remaining in the first line 510, the mixed fluid in which the organic solvent is dissolved in the supercritical fluid for drying may be prevented from being reintroduced into the chamber 10 in the subsequent drying process.
The upper supply port 60 is a member formed to place the plate 40 toward the substrate in the middle region of the upper case 12 and to provide a supply path of the supercritical fluid for drying.
The board placing board supporting part 70 is a member having one end connected with the bottom surface 22 of the lower case 14 and the other end connected with the board placing board 40, and supports the board placing board 40 such that the board placing board 40 is spaced apart from the bottom surface 22 of the lower case 14.
For example, due to the substrate placing panel supporting part 70, the first partition space R1 existing between the bottom surface 22 of the lower case 14 and the substrate placing panel 40 may perform a function of guiding the supercritical fluid for initial pressurization supplied through the integrated supply and discharge port 50 to move along the lower surface of the substrate placing panel 40 and gradually diffuse into the processing region where the substrate W is disposed.
The substrate support portion 80 is a member having one end connected to the upper surface of the substrate placement plate 40 and the other end connected to the substrate W, and supports the substrate W so as to be spaced apart from the upper surface of the substrate placement plate 40.
For example, due to the substrate supporting part 80, the second partition space R2 existing between the upper surface of the substrate placing plate 40 and the substrate W has a function of exposing the lower surface of the substrate W to the supercritical fluid for initial pressurization supplied through the integrated supply and exhaust port 50 and the supercritical fluid for drying supplied through the upper supply port 60, thereby reducing the drying time.
The housing driver 90 is a component that opens or closes the housing. The case driver 90 may perform a function of driving the lower case 14 to separate the lower case 14 from the upper case 12 and open the chamber 10 after the drying process is completed; or may perform the function of driving the lower case 14 at the beginning of the drying process to connect the lower case 14 to the upper case 12 and close the chamber 10. In the drawings, the housing driver 90 is shown as driving the lower housing 14, but this is merely an example. Housing driver 90 may be configured to drive upper housing 12.
For example, the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO)2) And the organic solvent may include alcohol, but the present invention is not limited thereto. As specific examples, the alcohol may include methanol, ethanol, 1-propanol, 2-propanol (IPA) and 1-butanol, but the present invention is not limited thereto.
For example, according to the supercritical drying technique performed in the substrate drying chamber according to one embodiment of the present invention, when carbon dioxide in a supercritical state is supplied into the substrate W whose surface is wetted with an organic solvent such as ethanol in the chamber, the alcohol on the wafer is dissolved in the supercritical carbon dioxide fluid. Subsequently, the supercritical carbon dioxide fluid in which the alcohol is dissolved may be gradually exhausted from the chamber, thereby drying the substrate W without causing pattern collapse.
(description of reference numerals)
1: substrate drying device
10: chamber
12: upper shell
14: lower casing
22: bottom surface
24: one side surface
26: the other side surface
28: middle area
30: sealing part
40: board for placing substrate
50: integrated supply and exhaust port
60: upper supply port
70: substrate placing plate supporting part
80: substrate support part
90: shell driver
100: supercritical fluid generation and storage unit
200: supercritical fluid supply regulation unit
210: main open/close valve
220: metering valve
230: orifice
240: initial pressure on-off valve
250: dry open/close valve
260: discharge opening and closing valve
270: heater unit
280. 290: filter
510: first pipeline
520: public port
530: second pipeline
C: coupling surface
R1: first separated space
R2: second separated space
PL: supply line
DL 1: first branch line
DL 2: second branch line
EL: discharge line
P1: first point
W: a substrate.
Claims (14)
1. A substrate drying apparatus, comprising:
a chamber providing a drying space for drying the substrate;
a supercritical fluid generation and storage unit that generates and stores a supercritical fluid supplied to the drying space within the chamber; and
a supercritical fluid supply regulation unit installed in a supply line between the supercritical fluid generation and storage unit and the chamber, and regulating the supercritical fluid stored in the supercritical fluid generation and storage unit to be supplied to the chamber,
wherein the supercritical fluid supply regulation unit includes:
a main opening and closing valve that determines whether the supercritical fluid stored in the supercritical fluid generation and storage unit is supplied;
a metering valve that regulates a flow rate of the supercritical fluid passing through the main opening-closing valve; and
an orifice that is installed between the main opening-closing valve and the metering valve and reduces a differential pressure applied to the metering valve by the supercritical fluid passing through the main opening-closing valve.
2. The substrate drying apparatus according to claim 1, wherein when the supercritical fluid passing through the main opening and closing valve passes through the orifice, a flow of the supercritical fluid is buffered so that flow fluctuations of the supercritical fluid passing through the metering valve are suppressed.
3. The substrate drying apparatus of claim 1, further comprising:
a first branch line branching from a first point of the supply line positioned at a rear end of the supercritical fluid supply regulation unit and providing a path through which the supercritical fluid for initial pressurization passing through the supercritical fluid supply regulation unit is supplied to the drying space within the chamber through an integrated supply and exhaust port formed in a side surface of the chamber; and
a second branch line branching off from the first point and providing a path through which the supercritical fluid for drying passing through the supercritical fluid supply regulation unit is supplied to the drying space within the chamber through an upper supply port formed in an upper surface of the chamber.
4. The substrate drying apparatus of claim 1, further comprising a heater unit installed in the supply line between the metering valve and the first point and heating the supercritical fluid passing through the metering valve.
5. The substrate drying apparatus of claim 3, wherein the chamber comprises:
an upper housing;
a lower case coupled to the upper case to be openable or closable; and
a substrate placing plate coupled to a bottom surface of the lower case and on which the substrate having the organic solvent formed thereon is disposed, and
wherein the integrated supply and discharge port is formed to extend from one side surface to another side surface of the lower case, is formed to place a plate toward the substrate in an intermediate region between the one side surface and the another side surface, and provides a path through which the supercritical fluid for initial pressurization supplied through the supply line and the first branch line is supplied into the chamber, and provides another path through which a mixed fluid in which the organic solvent is dissolved in the supercritical fluid for drying after drying is discharged, and
the upper supply port is formed to place a plate toward the substrate in a middle region of the upper case, and provides a path through which the supercritical fluid for drying supplied through the supply line and the second branch line is supplied into the chamber.
6. The substrate drying apparatus of claim 5, further comprising:
an initial pressurization open-close valve that is installed in the first branch line between the metering valve and the integrated supply and discharge port, and that determines whether or not the supercritical fluid for initial pressurization is supplied;
a dry opening and closing valve installed in the second branch line between the metering valve and the upper supply port, and determining whether to supply the supercritical fluid for drying; and
a discharge opening and closing valve installed in a discharge line connected to the integrated supply and discharge port and determining whether to discharge the mixed fluid.
7. The substrate drying apparatus of claim 5, wherein the integrated supply and exhaust port comprises:
a first pipeline formed to extend from the one side surface of the lower case to the middle region;
a common port formed to communicate with the first pipeline in the intermediate region and to place a board toward the substrate; and
a second line formed to communicate with the common port and the first line in the middle region and extending to the other side of the lower case.
8. The substrate drying apparatus according to claim 7, wherein the first pipeline and the common port provide a supply path of the supercritical fluid for initial pressurization, and
the common port and the second line provide a discharge path for the mixed fluid.
9. The substrate drying apparatus of claim 5, wherein the chamber further comprises a sealing portion disposed between coupling surfaces of the lower case and the upper case,
wherein the base plate is provided on the base plate placing plate so as to be positioned at a higher level than the coupling surfaces of the lower case and the upper case, and
when the drying process is completed and the lower case and the upper case are opened, particles disposed around the sealing portion between the coupling surfaces are prevented from being introduced onto the substrate due to gravity generated by a height difference between the substrate and the coupling surfaces.
10. The substrate drying apparatus according to claim 7, wherein the supercritical fluid for initial pressurization supplied through the first pipeline and the common port is blocked by the substrate placing plate to be prevented from being directly sprayed onto the substrate.
11. The substrate drying apparatus of claim 5, wherein the chamber further comprises a substrate placing plate supporting portion having one end coupled to the bottom surface of the lower case and the other end coupled to and supporting the substrate placing plate to space the substrate placing plate from the bottom surface of the lower case.
12. The substrate drying apparatus according to claim 11, wherein a first partitioned space existing between the bottom surface of the lower case and the substrate placing plate guides the supercritical fluid for initial pressurization supplied through the integrated supply and discharge port to move along a lower surface of the substrate placing plate and gradually diffuse into a processing region where substrates are disposed due to the substrate placing plate supporting part.
13. The substrate drying apparatus of claim 5, wherein the chamber further comprises a substrate supporting part having one end coupled to an upper surface of the substrate placing plate and the other end coupled to the substrate and the supporting substrate to space the substrate from the upper surface of the substrate placing plate.
14. The substrate drying apparatus according to claim 13, wherein a second partitioned space existing between the upper surface of the substrate placing plate and the substrate due to the substrate supporting part reduces a time of a drying process by exposing a lower surface of the substrate to the supercritical fluid for initial pressurization supplied through the integrated supply and exhaust port and the supercritical fluid for drying supplied through the upper supply port.
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| KR10-2019-0065809 | 2019-06-04 | ||
| KR1020190065809A KR102254186B1 (en) | 2019-06-04 | 2019-06-04 | Substrate drying apparatus |
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| KR20230158214A (en) | 2022-05-11 | 2023-11-20 | 세메스 주식회사 | Apparatus and method for supplying gas, facility for processing substrate |
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