CN112017977A - Miniature light-emitting diode substrate and manufacturing method thereof - Google Patents
Miniature light-emitting diode substrate and manufacturing method thereof Download PDFInfo
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- CN112017977A CN112017977A CN201910472316.3A CN201910472316A CN112017977A CN 112017977 A CN112017977 A CN 112017977A CN 201910472316 A CN201910472316 A CN 201910472316A CN 112017977 A CN112017977 A CN 112017977A
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- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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Abstract
The invention provides a micro light-emitting diode substrate and a manufacturing method thereof, wherein a driving back plate and a plurality of micro light-emitting diode chips are provided, the micro light-emitting diode chips and the driving back plate are arranged in a cavity filled with a double-layer solvent of a polar solvent and a non-polar solvent, an alternating voltage is applied to the driving back plate, so that the micro light-emitting diode chips and the driving back plate are attached under the action of a dielectrophoresis effect, and the micro light-emitting diode substrate with a plurality of first electrodes of the micro light-emitting diode chips respectively adhered to a plurality of electrode binding areas of the driving back plate is formed. The dielectrophoresis technology is utilized, so that the micro light-emitting diode chip can be automatically aligned and bound with the electrode binding area on the driving back plate, the huge transfer of the micro light-emitting diode chip is realized, and the transfer efficiency is improved.
Description
Technical Field
The present disclosure relates to the field of micro light emitting diode technologies, and in particular, to a micro light emitting diode substrate and a method for manufacturing the same.
Background
Compared with other types of light emitting diodes, the micro light emitting diode has the characteristics of high brightness, good light emitting efficiency, low power consumption and the like, so that the micro light emitting diode becomes a new generation of display technology by virtue of excellent photoelectric performance.
Since the size of the micro light emitting diode is about 1-10 microns, how to transfer a large number of micro light emitting diode chips with micron size to the driving back plate to obtain the micro light emitting diode substrate becomes a key technical problem.
Disclosure of Invention
In order to solve the above technical problem, the present disclosure provides a micro light emitting diode substrate and a method for manufacturing the same.
In one aspect, the present disclosure provides a method for manufacturing a micro light emitting diode substrate, including:
providing a driving back plate and a plurality of micro light-emitting diode chips, wherein each micro light-emitting diode chip comprises an epitaxial layer and a plurality of first electrodes arranged on the epitaxial layer; the driving back plate comprises a back plate substrate and a plurality of electrode binding regions distributed on the surface of the back plate substrate;
and placing the plurality of micro light-emitting diode chips and the driving back plate in a cavity filled with a double-layer solvent of a polar solvent and a non-polar solvent, and applying an alternating voltage to the driving back plate so as to enable the plurality of micro light-emitting diode chips and the driving back plate to be attached under the action of a dielectrophoresis effect, and forming a micro light-emitting diode substrate in which a plurality of first electrodes of the micro light-emitting diode chips are respectively adhered to a plurality of electrode binding areas of the driving back plate.
The example utilizes the dielectrophoresis technology, so that the micro light-emitting diode chip can be automatically aligned and bound with the electrode binding area on the driving back plate, and then huge transfer of the micro light-emitting diode chip is realized, and the transfer efficiency is improved.
Optionally, the method for manufacturing the micro light emitting diode substrate further includes:
evaporating the double-layer solvent in the chamber;
and heating the device formed in the substrate to obtain the micro light-emitting diode substrate.
In the present example, the double-layer solvent in the chamber is evaporated and heated, so that the first electrode and the electrode binding region are firmly bound together, and the micro light emitting diode substrate is obtained.
Optionally, before the step of placing the plurality of micro light emitting diode chips and the driving backplane in a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent, the method further includes:
and respectively carrying out hydrophilic performance treatment on the plurality of micro light-emitting diode chips and the driving back plate.
Optionally, the step of performing hydrophilic performance treatment on the plurality of micro light emitting diode chips and the driving backplane respectively includes:
and respectively soaking the plurality of micro light-emitting diode chips and the driving back plate in a self-assembly film solution so as to form a first self-assembly film on the outer surface of each first electrode of the plurality of micro light-emitting diode chips and form a second self-assembly film on the outer surface of the plurality of electrode binding areas of the driving back plate.
Optionally, the step of placing the plurality of micro light emitting diode chips and the driving backplane into a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent includes:
the micro light-emitting diode chips are densely arranged in a chamber containing a double-layer solvent, so that one surface, close to the first electrode, of the epitaxial layer of each micro light-emitting diode chip is immersed in the polar solvent under the action of the first self-assembly film, and one surface, far away from the first electrode, of the epitaxial layer of each micro light-emitting diode chip is immersed in the non-polar solvent under the action of the first self-assembly film;
and placing the driving back plate in the chamber containing the double-layer solvent, so that the driving back plate is immersed in the polar solvent under the action of the second self-assembly film.
In the embodiment, the plurality of micro light-emitting diode chips and the driving backboard are arranged in the cavity filled with the double-layer solvent of the polar solvent and the non-polar solvent, so that the micro light-emitting diode chips and the driving backboard can realize initial self-positioning and self-assembly, subsequent accurate positioning and accurate assembly are facilitated, and the transfer efficiency is further improved.
Optionally, the method for manufacturing the micro light emitting diode substrate further includes:
before the step of hydrophilic performance treatment is carried out on the plurality of micro light-emitting diode chips and the driving back plate respectively, the steps of cleaning the plurality of micro light-emitting diode chips by using a hydrogen chloride solution to remove impurities are also included.
This example facilitates hydrophilic treatment of the micro light emitting diode chip by removing impurities generated during the fabrication of the micro light emitting diode chip.
Optionally, the first electrode is made of a first metal; wherein the first metal comprises any one of gold, aluminum and nickel.
Optionally, the electrode bonding region includes a plurality of second electrodes arranged on the surface of the backplane substrate and a metal layer disposed on the second electrodes, the second electrodes are made of a first metal, and the metal layer includes a second metal, where a melting point of the second metal is lower than a melting point of the second electrodes.
Optionally, the method for manufacturing the micro light emitting diode substrate further includes:
screening the plurality of provided micro light-emitting diode chips to reserve effective micro light-emitting diode chips;
placing the effective plurality of micro-LED chips and the driving backplane in a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent.
In order to ensure the yield of the device, the example can also utilize the photoluminescence or electroluminescence technology during the manufacturing process to effectively distinguish the provided micro-diode chips so as to remove the failed micro-diode chips and retain the effective micro-diode chips, thereby effectively improving the yield of the device.
In another aspect, the present disclosure provides a micro light emitting diode substrate manufactured by the method of any one of the above embodiments.
According to the micro light-emitting diode substrate and the manufacturing method thereof provided by the disclosure, the driving back plate and the plurality of micro light-emitting diode chips are provided, wherein each micro light-emitting diode chip comprises an epitaxial layer and a plurality of first electrodes arranged on the epitaxial layer; the driving back plate comprises a back plate substrate and a plurality of electrode binding regions distributed on the surface of the back plate substrate; and placing the plurality of micro light-emitting diode chips and the driving back plate in a cavity filled with a double-layer solvent of a polar solvent and a non-polar solvent, and applying an alternating voltage to the driving back plate so as to enable the plurality of micro light-emitting diode chips and the driving back plate to be attached under the action of a dielectrophoresis effect, and forming a micro light-emitting diode substrate in which a plurality of first electrodes of the micro light-emitting diode chips are respectively adhered to a plurality of electrode binding areas of the driving back plate. The dielectrophoresis technology is utilized, so that the micro light-emitting diode chip can be automatically aligned and bound with the electrode binding area on the driving back plate, the huge transfer of the micro light-emitting diode chip is realized, and the transfer efficiency is improved.
Drawings
With the foregoing drawings in mind, certain embodiments of the disclosure have been shown and described in more detail below. These drawings and written description are not intended to limit the scope of the disclosed concepts in any way, but rather to illustrate the concepts of the disclosure to those skilled in the art by reference to specific embodiments.
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a micro light emitting diode substrate according to the present disclosure;
fig. 2 is a schematic structural diagram of a plurality of micro light emitting diode chips and a driving backplane provided by the present disclosure when the chips and the driving backplane are disposed in a chamber containing a double-layer solvent;
fig. 3 is a schematic flow chart of another method for manufacturing a micro light emitting diode substrate according to the present disclosure.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
Compared with other types of light emitting diodes, the micro light emitting diode has the characteristics of high brightness, good light emitting efficiency, low power consumption and the like, so that the micro light emitting diode becomes a new generation of display technology by virtue of excellent photoelectric performance.
Since the size of the micro light emitting diode is about 1-10 microns, how to transfer a large number of micro light emitting diode chips with micron size to the driving back plate to obtain the micro light emitting diode substrate becomes a key technical problem.
In the prior art, the micro led chips are generally transferred by using a transfer head technology, wherein the type of the transfer head may be various, such as an electrostatic transfer head and a magnetic transfer head. For example, in one of the prior arts, the lower end of the micro led chip without the substrate being peeled off is integrally bonded by using the magnetic substrate, then the back of the micro led chip with the substrate being peeled off is integrally bonded by using the transparent protective substrate, and then the magnetic transfer head is used to complete the one-time transfer of a large number of micro led chip particles; after the magnetic transfer printing head is removed, the chip particles of the magnetic transfer printing head are positioned by means of the positioning sleeve, and the chip particles of the magnetic transfer printing head are welded with the driving circuit board by means of the flip-chip reflow soldering process, so that the micro light-emitting diode substrate is obtained.
However, the size of the transfer head is limited, the number of micro leds that the transfer head can transfer is limited, and once the size of the micro led substrate is large and the number of micro leds to be transferred is large, the problem that the transfer head needs to be used for transferring the micro led chips many times is likely to occur, so that the transfer efficiency is low when the micro led chips are transferred based on the transfer head technology in the existing process of manufacturing the micro led substrate, and thus the manufacturing efficiency of the whole micro led substrate is low, which is not beneficial to the mass production of the micro led substrate.
In order to solve the above technical problem, the present disclosure provides a micro light emitting diode substrate and a method for manufacturing the same.
It should be noted that in each example and schematic diagram of the method for manufacturing a micro light emitting diode substrate provided in the present disclosure, a micro light emitting diode chip is disposed on a driving backplane as an example, in other examples, the micro light emitting diode chip may also be disposed below the driving backplane for self-assembly and binding, the principle is similar to that shown in each example and example diagram of the present disclosure, and details are not repeated in the present disclosure.
Fig. 1 is a schematic flow chart of a method for manufacturing a micro light emitting diode substrate according to the present disclosure, and as shown in fig. 1, the method for manufacturing a micro light emitting diode substrate includes:
the micro light-emitting diode chip comprises an epitaxial layer and a plurality of first electrodes arranged on the epitaxial layer; the driving back plate comprises a back plate substrate and a plurality of electrode binding regions distributed on the surface of the back plate substrate;
102, placing the plurality of micro light-emitting diode chips and the driving back plate in a cavity containing a double-layer solvent of a polar solvent and a non-polar solvent, and applying an alternating voltage to the driving back plate to enable the plurality of micro light-emitting diode chips and the driving back plate to be attached under the action of a dielectrophoresis effect, and forming a micro light-emitting diode substrate with a plurality of first electrodes of each micro light-emitting diode chip respectively adhered to a plurality of electrode binding regions of the driving back plate.
First, a driving backplane and a plurality of micro led chips are provided.
The driving back plate specifically provides a back plate structure of a driving circuit structure for the micro light-emitting diode substrate, and comprises a back plate substrate and a plurality of electrode binding regions arranged on the surface of the back plate substrate. The backplane substrate can be made of various materials, including but not limited to silicon wafers, glass, PI, PET and other substrate materials. The electrode binding regions may be regions disposed on the backplane substrate and distributed in a predetermined arrangement manner.
The micro light emitting diode chip is a chip structure providing a light output function for the micro light emitting diode substrate, and may include an epitaxial layer and a plurality of first electrodes arranged on the epitaxial layer, where the first electrodes may be used to bind with the electrode binding region of the driving backplane to provide level output for the micro light emitting diode chip. In addition, it should be noted that the number of the micro light emitting diode chips provided should be plural, and the disclosure is not limited to the type of each micro light emitting diode chip.
It can be known that the epitaxial layers of the micro light emitting diode chip are specifically a p-GaN layer, an InGaN layer and an n-GaN layer which are stacked, and the specific arrangement can be determined according to actual conditions.
Optionally, before the step of placing the plurality of micro light emitting diode chips and the driving backplane in a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent, the plurality of micro light emitting diode chips and the driving backplane may be subjected to hydrophilic property treatment, so that the micro light emitting diode chips and the driving backplane are preliminarily positioned, and subsequent accurate positioning and binding are facilitated.
For example, the plurality of micro light emitting diode chips and the driving backplane may be respectively subjected to a soaking treatment of a self-assembly film solution, so that a first self-assembly film is formed on the outer surface of each first electrode of the plurality of micro light emitting diode chips, and a second self-assembly film is formed on the outer surface of the plurality of electrode bonding regions of the driving backplane.
The soaking treatment may specifically adopt a self-assembled monolayer (SAM) electrochemical technology using a terminal-SH functional group, and through soaking in a chemical solution, a two-dimensional ordered monolayer is formed on the surfaces of the micro light emitting diode chip and the driving back plate, that is, a first self-assembled thin film is formed on the outer surface of each first electrode of the plurality of micro light emitting diode chips, and a second self-assembled thin film is formed on the outer surface of the electrode binding regions of the driving back plate.
In an alternative example, in order to ensure smooth performance of the preliminary self-alignment, the first electrode is made of a first metal, which may be a metal with stable properties that reacts with the self-assembly thin film solution, wherein the first metal includes any one of gold, aluminum, and nickel.
In an alternative example, the electrode bonding region of the driving backplane includes a plurality of second electrodes arranged on the surface of the backplane substrate and a metal layer covering the outer sides of the second electrodes, the metal layer is made of a second metal, and the melting point of the second metal is lower than that of the first metal, for example, the second metal may be indium. Accordingly, the second electrode may be made of the first metal.
It should be noted that, in this example, by disposing the metal layer made of the second metal and having a melting point lower than that of the first metal outside the second electrode, the second electrode of the driving backplane and the first electrode of the micro light emitting diode chip can have a bonding force and an adhesion force in the bonding process, so as to facilitate the firm bonding of the first electrode and the second electrode.
That is to say, the second electrode and the first electrode of the micro led chip can be made of the first metal, so as to ensure that the surfaces of the micro led chips and the driving backplane can form the corresponding self-assembly films when the micro led chips and the driving backplane are respectively soaked in the self-assembly film solution, thereby facilitating the subsequent self-assembly.
Then, the plurality of micro light emitting diode chips and the driving back plate are placed in a cavity filled with a double-layer solvent of a polar solvent and a non-polar solvent.
Fig. 2 is a schematic structural diagram of the plurality of micro led chips and the driving backplane provided in the present disclosure when disposed in the chamber containing the two-layer solvent, as shown in fig. 2, when the chamber contains the two-layer solvent, in this embodiment, the density of the polar solvent is greater than that of the non-polar solvent, and since the polar solvent is greater than that of the non-polar solvent and the two solvents are not mutually soluble, the polar solvent will be located at the bottom layer of the chamber and the non-polar solvent will be located at the top layer of the chamber, and an interface will be formed between the two solvents.
The proportion, the capacity and the type of the polar solvent and the non-polar solvent are not limited by the present disclosure, and only the micro light emitting diode chip and the driving back plate can be immersed in the solvent.
Because the first self-assembly film is formed on the surface of the first electrode of the micro light-emitting diode chip, the first self-assembly film has hydrophilicity, under the hydrophilic action, one surface, close to the first electrode, of the epitaxial layers of the micro diode chips is immersed in the polar solvent, and meanwhile, one surface, far away from the first electrode, of the epitaxial layers of the micro diode chips is immersed in the non-polar solvent. That is, the plurality of micro-diode chips will be closely packed at the interface between the two layers of solvent.
Since the outer surfaces of the plurality of electrode bonding regions of the driving backplate form a second self-assembled film, the second self-assembled film also has hydrophilicity. And placing the driving back plate in the chamber containing the double-layer solvent so that the driving back plate is immersed in the polar solvent. It should be noted that, in order to ensure smooth self-assembly of the subsequent micro diode chip and the driving backplane and reduce the self-assembly difficulty, the electrode binding region of the driving backplane can be close to the first electrode of the micro diode chip as much as possible by controlling the capacity of the polar solvent in the double-layer solvent chamber, so that the two can be rapidly assembled.
And finally, applying an alternating voltage to the driving back plate, wherein under the action of the alternating voltage, the first electrode and the second electrode generate a dielectrophoresis effect, under the action of the dielectrophoresis effect, the first electrode and the second electrode gradually approach to enable the first electrode of the micro light-emitting diode to gradually attach to the electrode binding area of the driving back plate, and finally forming a structure of the micro light-emitting diode substrate, wherein the plurality of first electrodes of the micro light-emitting diode chips are respectively adhered to the plurality of electrode binding areas of the driving back plate. When an ac voltage is applied to the driving backplate, the ac voltage can be input to the driving backplate through the electrodes of the driving backplate. The frequency of the ac voltage may be selected according to actual conditions, and is not limited herein.
In order to improve the transfer efficiency of the micro light-emitting diode chip during the manufacturing of the micro light-emitting diode substrate, the dielectrophoresis technology is utilized in the method, so that the micro light-emitting diode chip can be automatically aligned and bound with the electrode binding area on the driving back plate, the huge transfer of the micro light-emitting diode chip is further realized, and the transfer efficiency is improved.
On the basis of the above example, fig. 3 is a schematic flow chart of another method for manufacturing a micro light emitting diode substrate provided by the present disclosure, and as shown in fig. 3, the method for manufacturing a micro light emitting diode includes:
the micro light-emitting diode chip comprises an epitaxial layer and a plurality of first electrodes arranged on the epitaxial layer; the driving back plate comprises a back plate substrate and a plurality of electrode binding regions distributed on the surface of the back plate substrate;
and 205, evaporating the double-layer solvent in the chamber to dryness, and heating a device formed in the chamber to obtain the micro light-emitting diode substrate.
Specifically, the specific implementation principle of step 201, step 203, and step 204 in the present disclosure is similar to that of the foregoing example, and is not described herein again.
Different from the previous example, before the soaking treatment operation of the self-assembly film solution is performed on the plurality of micro light emitting diode chips and the driving back plate, the method further includes cleaning the plurality of micro light emitting diode chips with a hydrogen chloride solution to remove impurities. Through the mode, impurities generated in the preparation process of the micro light-emitting diode chip can be removed, and the first self-assembly film can be smoothly generated when the self-assembly film solution is used for soaking treatment.
The method for manufacturing the micro light-emitting diode chip comprises the steps of firstly finishing the growth of an epitaxial layer on a growth substrate such as sapphire, and then peeling the sapphire substrate by a laser peeling technology to obtain the micro light-emitting diode chip.
In addition, after the first electrode and the second electrode are attached under the action of the dielectrophoresis effect, the method may further include a step of evaporating the double-layer solvent in the chamber and a step of heating the device formed therein, and evaporating the solvent by evaporation and heating, so that the first electrode and the electrode binding region are firmly bound together, thereby obtaining the micro light-emitting diode substrate.
In other optional examples, the manufacturing method further comprises:
screening the plurality of provided micro light-emitting diode chips to reserve a plurality of effective micro light-emitting diode chips; placing the plurality of micro-LED chips and the driving backplane into a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent.
Specifically, in order to ensure the yield of the device, the photoluminescence or electroluminescence technology can be utilized during the manufacturing process to effectively distinguish the provided micro-diode chips so as to remove the failed micro-diode chips and retain the effective micro-diode chips, thereby effectively improving the yield of the device.
In another aspect, the present disclosure provides a micro light emitting diode substrate manufactured by the method of any one of the above embodiments.
Although exemplary embodiments of the present disclosure are described herein, the present disclosure is not limited to the various preferred embodiments described herein, but includes any and all embodiments, modifications, omissions, combinations (e.g., of aspects across various embodiments), alterations, and/or substitutions having equivalent elements as would be understood by one of ordinary skill in the art in light of the present disclosure. The limitations in the claims are to be interpreted broadly based on the terms used in the claims and not limited to examples described in the specification or during the prosecution of the application, which examples are to be construed as non-exclusive. For example, in the present disclosure, the term "preferably" is non-exclusive and means "preferably, but not limited to". In the present disclosure and during the course of this application, means-plus-function or step-plus-function limitations will apply only to the following cases, for a particular claim limitation, in which all of the following conditions exist: a) the "means for.. or" step for.. is expressly stated; b) the corresponding functions are clearly stated; and c) no structure, material, or acts for supporting the structure are recited. In the present disclosure and during the course of the present application, the term "present disclosure" or "invention" may be used to denote one or more aspects of the present disclosure. The terms present disclosure or invention should not be improperly interpreted as a limitation, should not be improperly interpreted as applying all aspects or embodiments (i.e., it should be understood that the present disclosure has multiple aspects and embodiments), and should not be improperly interpreted as limiting the scope of the application or claims. In the present disclosure and during the course of the present application, the term "embodiment" may be used to describe any aspect, feature, process or step, any combination thereof and/or any portion thereof, etc. In some examples, various embodiments may include overlapping features. In the present disclosure and during the course of the present application, the following shorthand terms may be utilized: an "e.g." indicating "for example" and an "NB" indicating "attention".
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present disclosure, and not for limiting the same; while the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present disclosure.
Claims (10)
1. A manufacturing method of a micro light-emitting diode substrate is characterized by comprising the following steps:
providing a driving back plate and a plurality of micro light-emitting diode chips, wherein each micro light-emitting diode chip comprises an epitaxial layer and a plurality of first electrodes arranged on the epitaxial layer; the driving back plate comprises a back plate substrate and a plurality of electrode binding regions distributed on the surface of the back plate substrate;
and placing the plurality of micro light-emitting diode chips and the driving back plate in a cavity filled with a double-layer solvent of a polar solvent and a non-polar solvent, and applying an alternating voltage to the driving back plate so as to enable the plurality of micro light-emitting diode chips and the driving back plate to be attached under the action of a dielectrophoresis effect, and forming a micro light-emitting diode substrate in which a plurality of first electrodes of the micro light-emitting diode chips are respectively adhered to a plurality of electrode binding areas of the driving back plate.
2. The method of claim 1, further comprising:
evaporating the double-layer solvent in the chamber;
and heating the device formed in the substrate to obtain the micro light-emitting diode substrate.
3. The method of claim 1, wherein the step of placing the plurality of micro light emitting diode chips and the driving backplane in a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent is preceded by the step of:
and respectively carrying out hydrophilic performance treatment on the plurality of micro light-emitting diode chips and the driving back plate.
4. The method as claimed in claim 3, wherein the step of performing hydrophilic treatment on the micro light emitting diode chips and the driving backplane comprises:
and respectively soaking the plurality of micro light-emitting diode chips and the driving back plate in a self-assembly film solution so as to form a first self-assembly film on the outer surface of each first electrode of the plurality of micro light-emitting diode chips and form a second self-assembly film on the outer surface of the plurality of electrode binding areas of the driving back plate.
5. The method of claim 4, wherein the step of placing the plurality of micro LED chips and the driving backplane in a chamber containing a bi-layer solvent of a polar solvent and a non-polar solvent comprises:
the micro light-emitting diode chips are densely arranged in a chamber containing a double-layer solvent, so that one surface, close to the first electrode, of the epitaxial layer of each micro light-emitting diode chip is immersed in the polar solvent under the action of the first self-assembly film, and one surface, far away from the first electrode, of the epitaxial layer of each micro light-emitting diode chip is immersed in the non-polar solvent under the action of the first self-assembly film;
and placing the driving back plate in the chamber containing the double-layer solvent, so that the driving back plate is immersed in the polar solvent under the action of the second self-assembly film.
6. The method of claim 3, further comprising:
before the step of hydrophilic performance treatment is carried out on the plurality of micro light-emitting diode chips and the driving back plate respectively, the steps of cleaning the plurality of micro light-emitting diode chips by using a hydrogen chloride solution to remove impurities are also included.
7. The method of claim 1, wherein the first electrode is made of a first metal; wherein the first metal comprises any one of gold, aluminum and nickel.
8. The method of claim 7, wherein the electrode bonding region comprises a plurality of second electrodes disposed on the surface of the backplane substrate and a metal layer disposed on the second electrodes, the second electrodes are made of a first metal, the metal layer comprises a second metal, and a melting point of the second metal is lower than a melting point of the second electrodes.
9. The method of claim 1, further comprising:
screening the plurality of provided micro light-emitting diode chips to reserve effective micro light-emitting diode chips;
placing the effective plurality of micro-LED chips and the driving backplane in a chamber containing a double-layer solvent of a polar solvent and a non-polar solvent.
10. A micro light emitting diode substrate manufactured by the method according to any one of claims 1 to 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114400279A (en) * | 2022-01-10 | 2022-04-26 | 东莞市中麒光电技术有限公司 | LED chip mass transfer method |
| WO2023077504A1 (en) * | 2021-11-08 | 2023-05-11 | 重庆康佳光电技术研究院有限公司 | Chip structure, chip structure manufacturing method, and chip transfer method |
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| CN114400279A (en) * | 2022-01-10 | 2022-04-26 | 东莞市中麒光电技术有限公司 | LED chip mass transfer method |
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| CN112017977B (en) | 2022-06-17 |
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