CN112002677A - RF communication assembly and manufacturing method thereof - Google Patents
RF communication assembly and manufacturing method thereof Download PDFInfo
- Publication number
- CN112002677A CN112002677A CN202010864842.7A CN202010864842A CN112002677A CN 112002677 A CN112002677 A CN 112002677A CN 202010864842 A CN202010864842 A CN 202010864842A CN 112002677 A CN112002677 A CN 112002677A
- Authority
- CN
- China
- Prior art keywords
- metal shielding
- discrete blocks
- metal
- base island
- discrete
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention provides an RF communication assembly and a method of manufacturing the same. The RF communication assembly comprises a metal plate and a metal shielding case. The metal plate includes a plurality of first discrete pieces, and the metal shield case includes a plurality of second discrete pieces, wherein the plurality of second discrete pieces are connected to the plurality of first discrete pieces through the plurality of solder members.
Description
Technical Field
The invention relates to the field of semiconductor device packaging, in particular to an RF communication assembly and a manufacturing method thereof.
Background
The existing RF device mostly adopts a plastic package chip structure on a substrate, i.e. a COB structure, which often needs to ensure that the internal RF chip is not interfered by a shielding can or a shielding layer. However, as the integration degree is increased, the RF module often needs to integrate a plurality of chips, which may generate crosstalk with each other and form a region with a larger radiation intensity.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for manufacturing an RF communication module, comprising the steps of:
(1) providing a carrier plate, and arranging a metal plate on the carrier plate, wherein the metal plate comprises a first base island and a plurality of first discrete blocks, and part of the first discrete blocks surrounds the first base island;
(2) fixing an RF chip on the first base island and guiding electrodes of the RF chip to a plurality of first discrete blocks through a plurality of first wires;
(3) providing a metal shielding case, wherein the metal shielding case covers the metal plate, and the metal shielding case is jointed with a part of the first separated blocks through a plurality of welding parts;
(4) cutting the metal shielding cover to form a plurality of second discrete blocks, wherein the plurality of second discrete blocks are separated from the main body part of the metal shielding cover through annular through holes and are connected with the plurality of welding parts;
(5) and forming a polymer layer for filling the inner space of the metal shielding cover through injection molding of the annular through hole.
The polymer layer fills the inner space of the metal shielding cover and is provided with an isolation layer on the metal shielding cover, and the isolation layer is a flat layer and at least covers the upper surface of the metal shielding cover. Further comprising the step (6) of forming an opening in the isolation layer, the opening exposing at least one of the plurality of second discrete pieces; forming an RF antenna on the isolation layer, the RF antenna being electrically connected to the second discrete block through the opening.
Wherein the metal plate further comprises a second base island, and another part of the plurality of first discrete blocks surrounds the second base island. And fixing other chips on the second base island, wherein the other chips lead the electrodes of the other chips to the first discrete blocks through a plurality of second leads.
According to the above manufacturing method, the present invention also provides an RF communication module comprising:
a metal plate including a first base island and a plurality of first discrete blocks, a portion of the plurality of first discrete blocks surrounding the first base island;
an RF radio frequency chip fixed on the first base island and having electrodes led to a plurality of first discrete blocks through a plurality of first wires;
a metal shield that covers the metal plate and engages a portion of the first plurality of discrete pieces with a plurality of solder members; the metal shielding case comprises a plurality of second discrete blocks, wherein the plurality of second discrete blocks are separated from the main body part of the metal shielding case by annular through holes and are connected with the plurality of solder pieces;
and the polymer layer fills the inner space of the metal shielding case.
The polymer layer fills the inner space of the metal shielding cover and is provided with an isolation layer on the metal shielding cover, and the isolation layer is a flat layer and at least covers the upper surface of the metal shielding cover; an RF radio frequency antenna is on the isolation layer and electrically connected to one of the second discrete blocks through an opening in the isolation layer.
Wherein the plurality of first conductive lines include a third conductive line forming a joint with one of the plurality of discrete blocks, one of the plurality of solder pieces covers the joint, and the RF chip is electrically connected with the RF antenna through the third conductive line.
Drawings
FIG. 1 is a cross-sectional view of an RF communication assembly of the present invention;
FIG. 2 is a top view of the RF communication assembly of the present invention;
FIG. 3 is a cross-sectional view of an RF communication assembly having an antenna in accordance with the present invention;
FIG. 4 is a top view of an RF communication assembly having an antenna in accordance with the present invention;
fig. 5-10 are schematic diagrams of a method of manufacturing an RF communication assembly of the present invention.
Detailed Description
The invention arranges an independent signal radiation component around the chip, especially at the corner of the chip and between the chips, wherein the signal radiation component is composed of a part of the metal plate, a solder component and a part of the metal shielding case, which is mainly used for weakening the chip radiation and crosstalk in the metal shielding case and flexibly realizing the electrical connection of the chip and the radio frequency antenna.
Referring to fig. 1 and 2, the RF communication module of the present invention has a metal plate 1, and the metal plate 1 may be a lead frame or a metal plate patterned structure. The metal plate 1 has a certain thickness, and can perform heat dissipation at the bottom.
The metal plate 1 includes a first base island 2, a second base island 3, and a plurality of first discrete blocks 4, 5, 6, and the plurality of first discrete blocks 4, 5, 6 may be circular or square, and surround the first base island 2 and the second base island 3, respectively. Wherein, the density of the first discrete blocks 5 between the first base island 2 and the second base island 3 can be larger to ensure the signal reliability between chips.
The RF chip 7 is fixed on the first base island 2, and other chips 8 are fixed on the second base island 3. Here, the other chip 8 may be provided in plurality, which has various functions related to the communication module, and the other chip 8 may be a controller, a filter, an amplifier, or the like.
The RF chip 7 is electrically connected to the plurality of first discrete blocks 4 and 5 through a plurality of wires 9, 11, wherein the wire 11 is bonded to the first discrete block 5 between the first base island 2 and the second base island 3 to form a bonding point.
It can be seen that the junction of the wire 11 with the first discrete block is covered by a solder member 12, which here is used for the purpose of acting as an electrical connection, as distinguished from solder members at other locations.
The radio frequency antenna further comprises a metal shielding cover 13, wherein the metal shielding cover 13 comprises a side wall and a top surface, a hollow cavity is defined by the side wall and the top surface, and the metal plate 1, the RF chip 7 and the other chips 8 are arranged in the hollow cavity. In this regard, the metal shield 13 is joined to a portion of the first plurality of discrete pieces 4, 5, 6 (i.e., the first discrete piece having the solder piece 12 thereon) by a plurality of solder pieces 12.
The metal shielding shell 13 includes a plurality of second discrete blocks 14, 15, 16, wherein the plurality of second discrete blocks 14, 15, 16 are separated from the main body portion of the metal shielding shell 13 by an annular through hole C and the plurality of second discrete blocks 14, 15, 16 are connected to the plurality of solder members 12. The first discrete blocks 4, 5, 6, the solder member 12 and the second discrete blocks 14, 15, 16 constitute a signal radiation assembly, so as to reduce chip radiation and crosstalk inside the metal shielding case. Specifically, the signal radiation elements are electrically isolated from the metal plate 1 and the main body portion of the metal shield.
For sealing, the hollow cavity of the metal shield 13 is filled with a polymer 17, which completely seals the RF chip 7 and the other chips 8, and the back surface of the metal plate 1 is exposed from the polymer 17.
The polymer 17 has an isolation layer 18 on the metal shield 13, and the isolation layer 18 is a flat layer and covers at least the upper surface of the metal shield 13. Referring to fig. 3 and 4, an RF antenna 19 is provided on the isolation layer 13, the RF antenna 19 being electrically connected to one of the second discrete blocks 14, 15, 16 through an opening in the isolation layer 18.
The RF antenna 19 may be formed by plating, sputtering, or the like, and may have a shape of a bar, a loop, an interdigital, or a square. The RF radio-frequency antenna 19 is separated from the RF radio-frequency chip 7 and the other chips 8 by a metal shield 19.
In addition, the present invention also provides a method of manufacturing an RF communication module, comprising the steps of:
(1) providing a carrier plate, and arranging a metal plate on the carrier plate, wherein the metal plate comprises a first base island and a plurality of first discrete blocks, and part of the first discrete blocks surrounds the first base island;
(2) fixing an RF chip on the first base island and guiding electrodes of the RF chip to a plurality of first discrete blocks through a plurality of first wires;
(3) providing a metal shielding case, wherein the metal shielding case covers the metal plate, and the metal shielding case is jointed with a part of the first separated blocks through a plurality of welding parts;
(4) cutting the metal shielding cover to form a plurality of second discrete blocks, wherein the plurality of second discrete blocks are separated from the main body part of the metal shielding cover through annular through holes and are connected with the plurality of welding parts;
(5) and forming a polymer layer for filling the inner space of the metal shielding cover through injection molding of the annular through hole.
The polymer layer fills the inner space of the metal shielding cover and is provided with an isolation layer on the metal shielding cover, and the isolation layer is a flat layer and at least covers the upper surface of the metal shielding cover. Further comprising the step (6) of forming an opening in the isolation layer, the opening exposing at least one of the plurality of second discrete pieces; forming an RF antenna on the isolation layer, the RF antenna being electrically connected to the second discrete block through the opening.
Wherein the metal plate further comprises a second base island, and another part of the plurality of first discrete blocks surrounds the second base island. And fixing other chips on the second base island, wherein the other chips lead the electrodes of the other chips to the first discrete blocks through a plurality of second leads.
The method of manufacturing the RF communication module provided by the present invention will be described in detail with reference to fig. 5 to 10.
Referring first to fig. 5, a carrier 20 is provided, and the carrier 20 may have a release layer (not shown) thereon. A metal plate 1 is disposed on the carrier plate 20, the metal plate 1 includes a first base island 2, a second base island 3, and a plurality of first discrete blocks 4, 5, 6, and the plurality of first discrete blocks 4, 5, 6 respectively surround the first base island 2 and the second base island 3.
Next, referring to fig. 6, an RF chip is fixed on the first base island 2, another chip 8 is fixed on the second base island 3, and electrodes of the RF chip 7 and the other chip 8 are led to the plurality of first divided blocks 4, 5, 6 through the plurality of first wires 9, 10, 11.
Referring to fig. 7, a metal shielding can 13 is provided, the metal shielding can 13 covers the metal plate 1, and the metal shielding can 13 is joined to a portion of the first divided blocks 4, 5, 6 by a plurality of solder members 12.
Referring to fig. 8, the metal shield case 13 is cut to form a plurality of second discrete blocks 14, 15, 16, the plurality of second discrete blocks 14, 15, 16 are separated from the main body portion of the metal shield case 13 by an annular through hole C, and the plurality of second discrete blocks 14, 15, 16 are connected to the plurality of solder members 12.
Then, referring to fig. 9, a polymer layer 17 filling the inner space of the metal shield 13 is injection molded through the annular through hole C. The polymer layer 17 fills the inner space of the metal shielding can 13 and has an isolation layer 18 on the metal shielding can 13, and the isolation layer 18 is a flat layer and covers at least the upper surface of the metal shielding can 13.
Referring to fig. 10, an opening is formed in the isolation layer 18, exposing at least one of the plurality of second discrete blocks 14, 15, 16; an RF antenna 19 is formed on the isolation layer 18, and the RF antenna 19 is electrically connected to the second discrete block 15 through the opening.
Finally, the carrier board 20 is removed, so as to obtain the RF communication module shown in fig. 3.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.
Claims (8)
1. A method of manufacturing an RF communication assembly, comprising the steps of:
(1) providing a carrier plate, and arranging a metal plate on the carrier plate, wherein the metal plate comprises a first base island and a plurality of first discrete blocks, and part of the first discrete blocks surrounds the first base island;
(2) fixing an RF chip on the first base island and guiding electrodes of the RF chip to a plurality of first discrete blocks through a plurality of first wires;
(3) providing a metal shielding case, wherein the metal shielding case covers the metal plate, and the metal shielding case is jointed with a part of the first separated blocks through a plurality of welding parts;
(4) cutting the metal shielding cover to form a plurality of second discrete blocks, wherein the plurality of second discrete blocks are separated from the main body part of the metal shielding cover through annular through holes and are connected with the plurality of welding parts;
(5) and forming a polymer layer for filling the inner space of the metal shielding cover through injection molding of the annular through hole.
2. The method of manufacturing an RF communication assembly of claim 1, wherein: the polymer layer fills the inner space of the metal shielding cover and is provided with an isolation layer on the metal shielding cover, and the isolation layer is a flat layer and at least covers the upper surface of the metal shielding cover.
3. The method of manufacturing an RF communication assembly of claim 2, wherein: further comprising the step (6) of forming an opening in the isolation layer, the opening exposing at least one of the plurality of second discrete pieces; forming an RF antenna on the isolation layer, the RF antenna being electrically connected to the second discrete block through the opening.
4. The method of manufacturing an RF communication assembly of claim 1, wherein: the metal plate further includes a second base island, and another portion of the plurality of first discrete blocks surrounds a periphery of the second base island.
5. The method of manufacturing an RF communication assembly of claim 1, wherein: and fixing other chips on the second base island, wherein the other chips lead the electrodes of the other chips to the first discrete blocks through a plurality of second leads.
6. An RF communication assembly comprising:
a metal plate including a first base island and a plurality of first discrete blocks, a portion of the plurality of first discrete blocks surrounding the first base island;
an RF radio frequency chip fixed on the first base island and having electrodes led to a plurality of first discrete blocks through a plurality of first wires;
a metal shield that covers the metal plate and engages a portion of the first plurality of discrete pieces with a plurality of solder members; the metal shielding case comprises a plurality of second discrete blocks, wherein the plurality of second discrete blocks are separated from the main body part of the metal shielding case by annular through holes and are connected with the plurality of solder pieces;
and the polymer layer fills the inner space of the metal shielding case.
7. The RF communication assembly of claim 6, wherein: the polymer layer fills the inner space of the metal shielding cover and is provided with an isolation layer on the metal shielding cover, and the isolation layer is a flat layer and at least covers the upper surface of the metal shielding cover; an RF radio frequency antenna is on the isolation layer and electrically connected to one of the second discrete blocks through an opening in the isolation layer.
8. The RF communication assembly of claim 6, wherein: the plurality of first conductive lines include a third conductive line forming a joint with one of the plurality of discrete blocks, one of the plurality of solder pieces covers the joint, and the RF chip is electrically connected with the RF antenna through the third conductive line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010864842.7A CN112002677A (en) | 2020-08-25 | 2020-08-25 | RF communication assembly and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010864842.7A CN112002677A (en) | 2020-08-25 | 2020-08-25 | RF communication assembly and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112002677A true CN112002677A (en) | 2020-11-27 |
Family
ID=73471642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010864842.7A Withdrawn CN112002677A (en) | 2020-08-25 | 2020-08-25 | RF communication assembly and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112002677A (en) |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173493A (en) * | 2004-12-17 | 2006-06-29 | Shinko Electric Ind Co Ltd | Semiconductor device and manufacturing method therefor |
| US20090065911A1 (en) * | 2007-09-12 | 2009-03-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and manufacturing method thereof |
| US20090212401A1 (en) * | 2008-02-26 | 2009-08-27 | Byung Tai Do | Package system for shielding semiconductor dies from electromagnetic interference |
| US20100140759A1 (en) * | 2008-12-10 | 2010-06-10 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die after Forming a Build-Up Interconnect Structure |
| CN102420198A (en) * | 2010-09-28 | 2012-04-18 | 大日本印刷株式会社 | Semiconductor device and manufacturing method therefor |
| US20130292808A1 (en) * | 2012-05-04 | 2013-11-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor package integrated with conformal shield and antenna |
| CN104659007A (en) * | 2013-11-20 | 2015-05-27 | 日月光半导体制造股份有限公司 | Semiconductor package and manufacturing method thereof |
| CN104966703A (en) * | 2015-06-04 | 2015-10-07 | 苏州日月新半导体有限公司 | Integrated circuit package and method of forming same |
| US20160020177A1 (en) * | 2014-06-13 | 2016-01-21 | Ubotic Company Limited | Radio frequency shielding cavity package |
| CN105489593A (en) * | 2015-12-24 | 2016-04-13 | 合肥祖安投资合伙企业(有限合伙) | Electromagnetic shield packaging assembly and manufacturing method therefor |
| TW201628158A (en) * | 2015-01-30 | 2016-08-01 | 力成科技股份有限公司 | Packaging structure and packaging method |
| US20160254230A1 (en) * | 2015-02-27 | 2016-09-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| WO2017094836A1 (en) * | 2015-12-04 | 2017-06-08 | 株式会社村田製作所 | Module having shield |
| CN107564891A (en) * | 2016-06-30 | 2018-01-09 | 恩智浦美国有限公司 | With antenna integrated barrier enclosure |
| US20180076148A1 (en) * | 2016-09-15 | 2018-03-15 | Skyworks Solutions, Inc. | Through-mold features for shielding applications |
| US20180197822A1 (en) * | 2015-07-07 | 2018-07-12 | Aoi Electronics Co., Ltd. | Semiconductor Device and Semiconductor Device Manufacturing Method |
-
2020
- 2020-08-25 CN CN202010864842.7A patent/CN112002677A/en not_active Withdrawn
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173493A (en) * | 2004-12-17 | 2006-06-29 | Shinko Electric Ind Co Ltd | Semiconductor device and manufacturing method therefor |
| US20090065911A1 (en) * | 2007-09-12 | 2009-03-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and manufacturing method thereof |
| US20090212401A1 (en) * | 2008-02-26 | 2009-08-27 | Byung Tai Do | Package system for shielding semiconductor dies from electromagnetic interference |
| US20100140759A1 (en) * | 2008-12-10 | 2010-06-10 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die after Forming a Build-Up Interconnect Structure |
| CN102420198A (en) * | 2010-09-28 | 2012-04-18 | 大日本印刷株式会社 | Semiconductor device and manufacturing method therefor |
| US20130292808A1 (en) * | 2012-05-04 | 2013-11-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor package integrated with conformal shield and antenna |
| CN104659007A (en) * | 2013-11-20 | 2015-05-27 | 日月光半导体制造股份有限公司 | Semiconductor package and manufacturing method thereof |
| US20160020177A1 (en) * | 2014-06-13 | 2016-01-21 | Ubotic Company Limited | Radio frequency shielding cavity package |
| TW201628158A (en) * | 2015-01-30 | 2016-08-01 | 力成科技股份有限公司 | Packaging structure and packaging method |
| US20160254230A1 (en) * | 2015-02-27 | 2016-09-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| CN104966703A (en) * | 2015-06-04 | 2015-10-07 | 苏州日月新半导体有限公司 | Integrated circuit package and method of forming same |
| US20180197822A1 (en) * | 2015-07-07 | 2018-07-12 | Aoi Electronics Co., Ltd. | Semiconductor Device and Semiconductor Device Manufacturing Method |
| WO2017094836A1 (en) * | 2015-12-04 | 2017-06-08 | 株式会社村田製作所 | Module having shield |
| CN105489593A (en) * | 2015-12-24 | 2016-04-13 | 合肥祖安投资合伙企业(有限合伙) | Electromagnetic shield packaging assembly and manufacturing method therefor |
| CN107564891A (en) * | 2016-06-30 | 2018-01-09 | 恩智浦美国有限公司 | With antenna integrated barrier enclosure |
| US20180076148A1 (en) * | 2016-09-15 | 2018-03-15 | Skyworks Solutions, Inc. | Through-mold features for shielding applications |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6191494B1 (en) | Semiconductor device and method of producing the same | |
| US7880282B2 (en) | Semiconductor package with integrated heatsink and electromagnetic shield | |
| JP5443594B2 (en) | Chip to waveguide port converter | |
| US6057601A (en) | Heat spreader with a placement recess and bottom saw-teeth for connection to ground planes on a thin two-sided single-core BGA substrate | |
| EP2787530B1 (en) | High-frequency semiconductor package and high-frequency semiconductor device | |
| KR100403142B1 (en) | semiconductor package | |
| US20160379933A1 (en) | Semiconductor package in package | |
| US9018741B2 (en) | Semiconductor package and manufacturing method thereof | |
| JPH05343588A (en) | Partial mold-type pcb chip-carrier type package | |
| CN102479767A (en) | Semiconductor device package with electromagnetic shielding | |
| CN101492148A (en) | Microphone package, lead frame, mold substrate, and mounting structure therefor | |
| US11538774B2 (en) | Wireless transmission module and manufacturing method | |
| US5426319A (en) | High-frequency semiconductor device including microstrip transmission line | |
| EP0393584B1 (en) | High frequency semiconductor device | |
| US6847115B2 (en) | Packaged semiconductor device for radio frequency shielding | |
| US6046501A (en) | RF-driven semiconductor device | |
| JP2010187277A (en) | Microphone package and method of manufacturing the same | |
| CN210489609U (en) | Integrated circuit package | |
| CN112002677A (en) | RF communication assembly and manufacturing method thereof | |
| CN115831933A (en) | Electromagnetic shielding module packaging structure and packaging method thereof | |
| US20030151123A1 (en) | Semiconductor die package having two die paddles | |
| US20230420386A1 (en) | Semiconductor packaging emi shielding structure and manufacturing method of the same | |
| CN110610906A (en) | Semiconductor electromagnetic shielding structure and manufacturing method thereof | |
| CN117374053A (en) | Semiconductor package electromagnetic shielding structure and manufacturing method thereof | |
| JP3640463B2 (en) | MMIC package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20201127 |
|
| WW01 | Invention patent application withdrawn after publication |