CN111999974A - High-temperature-resistant optical wavelength conversion device, preparation method and projection device - Google Patents
High-temperature-resistant optical wavelength conversion device, preparation method and projection device Download PDFInfo
- Publication number
- CN111999974A CN111999974A CN202010935642.6A CN202010935642A CN111999974A CN 111999974 A CN111999974 A CN 111999974A CN 202010935642 A CN202010935642 A CN 202010935642A CN 111999974 A CN111999974 A CN 111999974A
- Authority
- CN
- China
- Prior art keywords
- wavelength conversion
- layer
- conversion material
- conversion layer
- glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 235
- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000000843 powder Substances 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 107
- 239000003292 glue Substances 0.000 claims description 50
- 239000000741 silica gel Substances 0.000 claims description 37
- 229910002027 silica gel Inorganic materials 0.000 claims description 37
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 36
- 239000000853 adhesive Substances 0.000 claims description 33
- 230000001070 adhesive effect Effects 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000002156 mixing Methods 0.000 claims description 18
- 239000002344 surface layer Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 8
- -1 methyl silica gel Chemical compound 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000007790 scraping Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 239000000499 gel Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 abstract description 5
- 239000007767 bonding agent Substances 0.000 abstract 3
- 239000000084 colloidal system Substances 0.000 description 25
- 230000005540 biological transmission Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 8
- 238000002679 ablation Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000005336 cracking Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
- G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/007—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light
- G02B26/008—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light in the form of devices for effecting sequential colour changes, e.g. colour wheels
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Astronomy & Astrophysics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Projection Apparatus (AREA)
- Optical Filters (AREA)
Abstract
The invention provides a high-temperature-resistant optical wavelength conversion device which comprises a substrate and a wavelength conversion layer. The invention also provides a preparation method of the optical wavelength conversion device, which is characterized in that the wavelength conversion layer is arranged on the substrate and comprises a wavelength conversion material and a bonding agent, the wavelength conversion material is fully mixed in the bonding agent, the wavelength conversion material comprises a plurality of fluorescent powder particles, the distance between two adjacent fluorescent powder particles in a laser irradiation area is not more than 2 times of the average diameter of the fluorescent powder particles, the preparation method of the optical wavelength conversion device is characterized in that the wavelength conversion material and the bonding agent are uniformly distributed in the wavelength conversion layer through pressing, free stacking and inorganic processes, and the distance between two adjacent fluorescent powder particles in the laser irradiation area is not more than 2 times of the average diameter of the material particles. The invention also provides a projection device. The high-temperature-resistant optical wavelength conversion device in the technical scheme has good high-temperature resistance and laser resistance. The projection device also has good temperature resistance and high power resistance due to the use of the projection device.
Description
Technical Field
The invention relates to the field of wavelength conversion devices, in particular to a high-temperature-resistant optical wavelength conversion device, a preparation method and a projection device.
Background
The main principle of the laser wavelength conversion technology is that excitation light irradiates on a wavelength conversion material such as fluorescent powder, and excited light generates excited light with a wavelength different from that of the excitation light. The technology is widely applied to the field of laser projection and laser illumination, and the wavelength conversion device is a key component for realizing the technology. At present, a wavelength conversion layer applied to a laser projection technology mainly comprises a substrate and the wavelength conversion layer arranged on the substrate, a laser light source irradiates the wavelength conversion layer, a stimulated light is generated by exciting fluorescent powder in the wavelength conversion layer, but when the stimulated light is generated, part of energy of the laser light source can be converted into heat, so that the wavelength conversion layer is heated, if the heat is not dispersed in time, the problems of aging, breaking and the like of the wavelength conversion layer can be caused, and the light conversion efficiency and the service life of the wavelength conversion layer are reduced.
With the increasing of brightness and color requirements of users for projectors and various lighting systems, the power of laser light sources is continuously increased, and in the wavelength conversion layer in the prior art, fluorescent powder and colloid are generally mixed and then coated on the surface of a substrate. The surface of the wavelength conversion layer is generally a smooth glue leveling surface, and the problems of the glue leveling surface mainly include: firstly, the uneven mixing of the fluorescent powder and the colloid causes the uneven distribution of the powder and the colloid, and the phenomena of more local colloid, less fluorescent powder and the like occur; and secondly, the phenomenon of layering of the fluorescent powder and the colloid occurs due to the sedimentation of the fluorescent powder. Above-mentioned two problems can lead to under high power laser light source's the illumination, and the laser facula is beaten on above-mentioned smooth colloid flow flat surface, and the facula can concentrate on the region that phosphor powder is more, leads to the heat of this part to increase sharply for the colloid near this region and region are heated too high and produce the colloid fracture, and phosphor powder also can be because of being heated too high and be ablated inefficacy, influences the light conversion efficiency of phosphor powder, has reduced wavelength converter's life.
In the existing manufacturing process of the wavelength conversion layer, powder glue is mixed and then coated on a substrate, and in the process, the conversion efficiency of the wavelength conversion layer is reduced and the difficulty of the coating process is increased due to the fact that the proportion of fluorescent powder is simply increased. Therefore, how to provide a wavelength conversion device which can ensure high light conversion efficiency, can tolerate high-power laser and avoid the occurrence of the conditions of colloid cracking of a wavelength conversion layer and burning failure of fluorescent powder is a hotspot and difficulty of research in the field of laser wavelength conversion.
The background section of this document is provided merely to facilitate an understanding of the disclosure, and thus, prior to filing this document, it may be helpful to note that the disclosure in the background section may not constitute a prior art teaching or reference to one or more embodiments of the present invention.
Disclosure of Invention
The invention aims to provide a high-temperature-resistant optical wavelength conversion device, which can improve the laser resistance and the high-temperature resistance of the device.
In order to achieve one or a part of or all of the above or other objects, an embodiment of the invention provides a high temperature resistant light wavelength conversion device, which includes a substrate and a wavelength conversion layer. The wavelength conversion layer is disposed on the substrate. The wavelength conversion layer includes a wavelength conversion material and a binder in which the wavelength conversion material is mixed. The wavelength conversion material comprises a plurality of fluorescent powder particles, the surface of the wavelength conversion layer is partially or completely protruded from the surface layer of the wavelength conversion layer by the fluorescent powder particles to form a rough surface, and the distance between two adjacent fluorescent powder particles in a laser irradiation area is not more than 2 times of the average diameter of the fluorescent powder particles. Almost no glue is left on the surface layer of the wavelength conversion layer, the wavelength converter prepared by the traditional organic glue process can tolerate the temperature of 250 ℃ for 72 hours or less, and the laser power can not exceed 3W/mm2The wavelength conversion device prepared by the organic glue can resist the high temperature of 250 ℃ for more than 5000 hours, and can resist the laser power density of not less than 5W/mm2(ii) a The wavelength converter prepared by the conventional inorganic adhesive process can tolerate the temperature of 250 ℃ for no more than 5 hours and the laser power of no more than 5W/mm2, and the wavelength converter prepared by the inorganic adhesive disclosed by the invention can tolerate the temperature of 250 ℃ for no more than 5000 hours and the laser power density of no less than 6W/mm2。
The adhesive is organic glue or inorganic glue. When the adhesive is organic glue, the wavelength conversion material and the organic glue are fully mixed according to the mixing volume ratio of 0.6:1 to 10: 1; when the adhesive is inorganic glue, the wavelength conversion material and the inorganic glue are fully mixed according to the mixing volume ratio of 4:1 to 10: 1.
The organic gel can be epoxy resin silica gel, methyl silica gel, phenyl silica gel or silica gel containing one or more of the above; the inorganic glue may be, for example, a water-soluble inorganic glue or an alcohol-soluble inorganic glue.
The wavelength conversion material is one or more of YAG, GaAG, LuAG and S/CASN nitride fluorescent powder.
The substrate is a transmission substrate or a reflection substrate.
To achieve one or a part of or all of the above or other objects, a method for manufacturing a high temperature resistant light wavelength conversion device according to an embodiment of the present invention includes: mixing the wavelength conversion material with organic glue, wherein the mixing volume ratio of the wavelength conversion material to the organic glue is between 0.6:1 to 10: 1; coating the substrate with the wavelength conversion layer; and scraping the surface adhesive layer of the wavelength conversion layer to ensure that the wavelength conversion material particles partially or completely protrude out of the surface layer of the wavelength conversion layer to form a rough surface.
To achieve one or a part of or all of the above or other objects, a method for manufacturing a high temperature resistant light wavelength conversion device according to an embodiment of the present invention includes: depositing a wavelength converting material on a substrate; coating organic glue on the surface of the wavelength conversion material, and enabling the glue to permeate into the wavelength conversion material to form a wavelength conversion layer until the wavelength conversion material particles partially or completely protrude out of the bonding layer, wherein the mixing volume ratio of the wavelength conversion material to the organic glue is 0.6:1 to 10: 1.
To achieve one or a part of or all of the above or other objects, a method for manufacturing a high temperature resistant light wavelength conversion device according to an embodiment of the present invention includes: the wavelength conversion material and the inorganic glue are fully mixed and coated on the substrate to form the wavelength conversion layer, the mixing volume ratio of the wavelength conversion material to the inorganic glue is between 4:1 and 10:1, the inorganic glue is evaporated and shrunk, the glue amount among the wavelength conversion material particles on the surface layer of the wavelength conversion layer is reduced, and the wavelength conversion material particles partially or completely protrude out of the surface layer of the wavelength conversion layer.
To achieve one or a part of or all of the above or other objects, an embodiment of the invention provides a projection apparatus including a laser light source unit and a fluorescent wheel. The laser light source unit is used for emitting laser beams; the fluorescent wheel includes a wavelength conversion region, the wavelength conversion region is a high temperature resistant optical wavelength conversion device in the above embodiments, and the wavelength conversion region is used to convert a laser beam into a converted beam.
In the high-temperature resistant optical wavelength conversion device according to the related embodiment of the invention, the wavelength conversion material in the optical wavelength conversion device is distributed approximately uniformly and compactly in the adhesive by ensuring that the distance between two adjacent phosphor particles in the laser irradiation area is not more than 2 times of the average particle size of the phosphor particles, so that the laser resistance and the high-temperature resistance of the wavelength conversion layer are effectively improved, and the service life of the wavelength conversion layer is prolonged. The embodiment of the invention also provides a preparation method of the high-temperature-resistant light wavelength conversion device, which improves the existing pressing process and simultaneously provides a free-accumulation or inorganic process method to obtain the wavelength conversion layer with uniform and compact distribution, thereby improving the laser resistance and the high-temperature resistance of the light wavelength conversion device. In addition, the invention also provides a projection device comprising the high-temperature-resistant light wavelength conversion device, and as the wavelength conversion material and the adhesive of the light wavelength conversion device in the projection device are densely distributed, the size of a laser beam spot transmitted by the wavelength conversion layer is reduced, more laser beams can be collected under the same light-receiving caliber, the projection brightness of the projection device can be further improved, and the projection device can be applied to a high-power laser projection device to improve the image brightness.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of a high temperature resistant optical wavelength conversion device according to a first embodiment of the present invention.
Fig. 2 shows a schematic plan view of a wavelength conversion layer in a first embodiment of the invention.
Fig. 3 shows colloidal ablation of a wavelength converting layer in a first embodiment of the invention with a prior art wavelength converting layer under laser irradiation of the same power.
Fig. 4 shows the colloidal cracking of the wavelength converting layer in the first embodiment of the present invention and the wavelength converting layer of the prior art under the same high temperature conditions.
Fig. 5 shows a flowchart of a method for producing a light wavelength conversion device according to a second embodiment of the present invention.
Fig. 6 shows a plan microscopic view and a cross-sectional view of a wavelength conversion layer of a second embodiment of the present invention.
FIG. 7 is a schematic view showing the distribution of phosphor particles in a laser irradiated region according to a second embodiment of the present invention.
Fig. 8 shows a flowchart of a method for producing a light wavelength conversion device according to a third embodiment of the present invention.
Fig. 9 shows a plan microscopic view and a cross-sectional view of a wavelength conversion layer of a third embodiment of the present invention.
Fig. 10 shows a flowchart of a method for producing a light wavelength conversion device according to a fourth embodiment of the present invention.
Fig. 11 shows a plan microscopic view and a cross-sectional view of a wavelength conversion layer of a fourth embodiment of the present invention.
Fig. 12 is a schematic view of a projection apparatus according to a fifth embodiment of the invention.
Reference numerals: 100-high temperature resistant optical wavelength conversion device; 11a,11b,11 c-wavelength conversion layer surface; 110-a substrate; 12a,12b,12 c-phosphor particles; 120-wavelength converting layer; 13a,13b,13 c: a colloid; 130-laser light source unit; 140-a diffusing element; 150-a first filter element; 160-a light delivery module; 161-high mirror; 170-a second filter element; 180-dodging element; 190-a color filter wheel; BR-blue light filter zone; CB 1-converts light beams; FW-fluorescent wheels; GL-green beam; GR-green light filter zone; l1-laser beam; lz-laser path; RL-red light beam; RR-Red light Filter area.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, a high temperature resistant optical wavelength conversion device 100 according to a first embodiment of the invention includes a substrate 110 and a wavelength conversion layer 120. The wavelength conversion layer 120 is disposed on the substrate 110, includes a wavelength conversion material and an adhesive, and the wavelength conversion material is sufficiently mixed in the adhesive. The substrate 110 in this embodiment is a reflective substrate, but is not limited thereto, and the substrate 110 may also be a transmissive substrate in other embodiments. The wavelength conversion material is a phosphor, which may be one or more of YAG, GaAG, LuAG and S/CASN nitride phosphors, for example, but the invention is not limited thereto, and YAG phosphor is used as the wavelength conversion material in this embodiment. The adhesive can be organic adhesive or inorganic adhesive, and the organic adhesive can be epoxy resin silica gel, methyl silica gel, phenyl silica gel or silica gel containing one or more of the epoxy resin silica gel, the methyl silica gel and the phenyl silica gel; the inorganic adhesive can be water-soluble inorganic adhesive or alcohol-soluble inorganic adhesive, and the inorganic adhesive has good high temperature resistance and can generally bear the high temperature of 600-900 ℃. The water-soluble inorganic gum is composed of, for example, silicate, phosphate, sulfate, water glass, or the like. The alcohol-soluble inorganic gum is composed of, for example, a metal oxide.
In the prior art, when silica gel is selected as the adhesive, the ratio of the fluorescent powder to the silica gel of the wavelength conversion layer is generally between 0.1: 1 to 0.5: 1; when inorganic glue is selected as the adhesive, the ratio of the fluorescent powder to the inorganic glue is 2: 1 to 4:1, the low-proportion wavelength conversion layer has uneven powder glue distribution in the layer and thicker surface layer glue, so that the wavelength conversion layer is seriously ablated and cracked under the irradiation of high laser power. Researches show that the high laser resistance and high temperature resistance of the wavelength conversion layer can be effectively improved by improving the proportion of the fluorescent powder to the silica gel or the inorganic gel. In this embodiment, silica gel is used as the adhesive, the ratio of the fluorescent powder to the silica gel is 0.6:1, and a microscopic plan view of the wavelength conversion layer 120 is shown in fig. 2. In the embodiment, the compactness of the fluorescent powder and the uniformity of the distribution of the fluorescent powder in the silica gel are ensured by ensuring that the distance between two adjacent fluorescent powder particles in a laser irradiation area is not more than 2 times of the average diameter of the fluorescent powder particles.
Referring to fig. 3 and 4, they show the structure diagrams of the laser power and high temperature tests of the wavelength conversion layer 120 in which the phosphor and the silica gel are mixed sufficiently at a mixing volume ratio of 0.6:1 in this embodiment and the wavelength conversion layer in which the phosphor and the silica gel are mixed at a mixing volume ratio of 0.3:1 in the prior art. Fig. 3 shows the colloid ablation of the wavelength conversion layer 120 of the present embodiment and the wavelength conversion layer of the prior art under the same power laser irradiation, fig. 3(a) is the colloid ablation of the wavelength conversion layer 120 of the present embodiment, and fig. 3(b) is the colloid ablation of the wavelength conversion layer of the prior art, and it can be seen that under the same high power laser irradiation, the colloid ablation of the wavelength conversion layer 120 of the present embodiment is significantly better than that of the wavelength conversion layer of the prior art. Fig. 4 shows colloid cracking of the wavelength conversion layer 120 of the present embodiment and the wavelength conversion layer of the prior art under the same high temperature condition, specifically at 250 ℃, fig. 4(a) shows colloid ablation of the wavelength conversion layer 120 of the present embodiment, and fig. 4(b) shows colloid ablation of the wavelength conversion layer of the prior art, and it can be seen that under the same high temperature condition, the colloid cracking of the wavelength conversion layer 120 of the present embodiment is relatively less, the colloid cracking of the wavelength conversion layer of the prior art is dense, and the cracking resistance of the wavelength conversion layer 120 of the present embodiment is significantly better than that of the wavelength conversion layer of the prior art.
The difference between the high temperature resistant light wavelength conversion device provided in the second embodiment of the present invention and the first embodiment is that the phosphor particles 12a of the wavelength conversion layer in the present embodiment are sufficiently mixed with silica gel in a mixing volume ratio of 1: 1. Referring to fig. 5, a method for manufacturing the high temperature resistant light wavelength conversion device is further provided, including mixing phosphor particles 12a and a binder, such as silica gel, in this embodiment, in a volume ratio of 1:1, coating the mixture on a substrate to form a wavelength conversion layer, and scraping the silica gel on the surface of the wavelength conversion layer with a blade, for example. As shown in fig. 6, fig. 6a is a microscopic plan view and fig. 6b is a cross-sectional view of the wavelength conversion layer in this embodiment, since the silica gel on the surface layer of the wavelength conversion layer is scraped by the blade, the volume ratio of the phosphor particles 12a after scraping to the silica gel is about 1.25:1, the phosphor particles 12a on the surface of the wavelength conversion layer partially or totally protrude from the surface layer 11a of the wavelength conversion layer to form a rough surface, and are densely arranged on the surface of the wavelength conversion layer, and the phosphor particles 12a are uniformly distributed in the colloid 13 a. As shown in fig. 7, the laser light is irradiated on the wavelength conversion layer along a laser path Lz on which the distance between two adjacent phosphor particles does not exceed 2 times the average diameter of the phosphor particles in the wavelength conversion layer region. Not higher than 5W/mm compared with the current wavelength conversion layer2The wavelength conversion layer in the embodiment can withstand the light source power of 9.53W/mm2The laser is improved by about 90.6 percent, and meanwhile, the working time under the high-temperature environment of 250 ℃ can reach 5000 hours or moreIn comparison with the known wavelength conversion layer, the operating time of not more than 72 hours is increased by at least a factor of 68.
In this embodiment, the ratio of the phosphor particles 12a to the silica gel is higher than 0.6:1, the distance between two adjacent phosphor particles 12a in a laser irradiation area is not more than 2 times of the average diameter of the phosphor particles 12a, if a small amount of colloid 13a still exists on the surface of a wavelength conversion layer, the ratio can be continuously improved, and experimental test results show that the optimal ratio of the colloid powder to the volume ratio after scraping is 1.25: 1.
referring to fig. 8, a difference between the high temperature resistant optical wavelength conversion device according to the third embodiment of the present invention and the second embodiment is that the present embodiment provides another method for manufacturing the high temperature resistant optical wavelength conversion device, including: stacking the wavelength conversion material on the substrate, coating the silica gel on the surface of the wavelength conversion material, and allowing the glue to penetrate into the wavelength conversion material to form the wavelength conversion layer until the particles of the wavelength conversion material partially or completely protrude from the bonding layer, as shown in fig. 9, fig. 9a is a microscopic plan view of the wavelength conversion layer in this embodiment, fig. 9b is a cross-sectional view of the wavelength conversion layer in this embodiment, the phosphor particles 12b partially or completely protrude from the surface layer 11b of the wavelength conversion layer, and the phosphor particles 12b are uniformly and densely distributed in the colloid 13 b. In the present embodiment, the mixing volume ratio of the phosphor particles 12b to the silica gel is higher than 0.6:1, guarantee that the distance between the two adjacent phosphor powder granule 12b of laser irradiation area average is no longer than 2 times the average diameter of phosphor powder granule 12b to, according to the closest packing principle, space utilization when the spheroid piles up according to the closest packing arrangement is 74.05%, consider that phosphor powder granule 12b is not of uniform size and not necessarily uniform spheroid, therefore the space utilization in the wavelength conversion layer that adopts the free packing technology can be higher than 74.05%, the maximum limit ratio of powder glue is 10:1, the higher the proportion is, the more compact the powder glue distribution is, and the better the high temperature resistance of the wavelength conversion layer is.
In a fourth embodiment of the present invention, another high temperature resistant optical wavelength conversion device is provided, wherein the adhesive is an inorganic adhesive, such as a water-soluble inorganic adhesive or an alcohol-soluble inorganic adhesive, and a phosphor thereofThe mixing volume ratio of the particles 12c to the inorganic glue was 8: 1. The present embodiment further provides a method for manufacturing the high temperature resistant optical wavelength conversion device, please refer to fig. 10, which includes: the phosphor particles 12c and the binder, in this embodiment, the inorganic glue, are fully mixed according to the ratio of 8:1 by volume, and then coated on the substrate to form the wavelength conversion layer, the glue amount between the phosphor particles 12c on the surface layer is reduced by the volatilization performance of the alcohol-soluble inorganic glue or the evaporation shrinkage performance of the water-soluble inorganic glue, so that the phosphor particles 12c partially or completely protrude out of the surface layer 11c of the wavelength conversion layer, as shown in fig. 11, fig. 11a is a microscopic plan view of the wavelength conversion layer in this embodiment, fig. 11b is a cross-sectional view of the wavelength conversion layer in this embodiment, and the phosphor particles 12c are uniformly and densely distributed in the glue 13 c. The wavelength conversion layer manufactured by the process can resist the power of a light source of 11W/mm2The laser can work for more than 5000 hours in a high-temperature environment of 250 ℃, and the working time is increased by at least 68 times compared with that of the current wavelength conversion layer.
In this embodiment, the ratio of the phosphor particles 12c to the inorganic adhesive should be greater than 4:1, when the inorganic adhesive is cured, about 30% of liquid volatilizes, and according to the test result, the ratio of the fluorescent powder particles 12c to the inorganic adhesive is not higher than 10: 1.
as shown in the table one below, the test results of the high laser resistance of the light wavelength conversion devices in the two to four embodiments and the light wavelength conversion device in the prior art under the same conditions are shown. Test data show that the power of the laser light source which can be endured by the optical wavelength conversion device in the prior art is not more than 4.6W/mm2The light wavelength conversion device prepared by pressing, free stacking or inorganic process can endure laser source power of more than 5W/mm2Compared with the prior art, the light conversion efficiency of the light wavelength conversion device is remarkably improved, and further, the light conversion efficiency of the light wavelength conversion device is effectively improved.
Watch 1
As shown in the following table two, the results of the test of the high temperature resistance of the light wavelength conversion device in the above two to four embodiments and the light wavelength conversion device in the prior art under the same conditions are shown. Experimental data show that the sustainable working time of the optical wavelength conversion device in the prior art is less than 72 hours under the high-temperature condition of 250 ℃, the sustainable working time of the optical wavelength conversion device prepared by pressing, free stacking or inorganic processes is more than 5000 hours, the working time is increased by at least 6800% on the same scale, and the service life of the optical wavelength conversion device is remarkably prolonged.
Watch two
Meanwhile, brightness tests are carried out on the wavelength conversion layers with different proportions of the powder cement, the test results are shown in the following table III, and the brightness of the fluorescent powder silica gel with high proportion is high. Because the surface layer of the high-proportion fluorescent powder silica gel is compact, the size of a light spot of a transmitted laser beam is reduced, more received laser can be collected through the high-proportion fluorescent powder silica gel under the same light-receiving caliber, and the brightness is further improved. Meanwhile, the exciting light and the stimulated light do not have a transmission layer of surface colloid, so that the brightness loss is reduced.
Watch III
Fig. 12 is a schematic view of a projection apparatus according to a fifth embodiment of the present invention. Referring to fig. 12, in the present embodiment, the projection apparatus includes a laser light source unit 130, a diffusion element 140, a first filter element 150, a fluorescent wheel FW, a light transmission module 160, a second filter element 170, and a light uniformizing element 180. The laser light source unit 130 is used to emit a laser light beam L1. The diffusion element 140 is disposed on the transmission path of the laser beam L1 to convert the laser beam L1 into a uniform surface light source. The first filter element 150 is disposed on the transmission paths of the laser beam L1 and the converted beam CB1, and is used for transmitting a beam in a specific wavelength range and reflecting other beams. A fluorescent wheel FW is located between the first filter element 150 and the light transfer module 160. The light transmission module 160 includes a plurality of high reflection mirrors 161 and a diffusion element 140, and is disposed on the transmission path of the laser beam L1 for guiding the laser beam L1 to the first filter element 150 and transmitting the laser beam, and the second filter element 170 is disposed on the transmission paths of the laser beam L1 and the converted beam CB1 for filtering the beams except the beam in the specific wavelength range and passing the beam in the specific wavelength range. The light uniformizing element 180 is positioned on the transmission path of the laser beam L1 and the converted beam CB1 to uniformize the beams.
In this embodiment, the laser light source unit 130 may be, for example, a blue laser light source. The first filter element 150 may be a dichroic filter, for example, and may transmit blue light and reflect other light. The fluorescent wheel FW includes a wavelength conversion region having a diffuse reflection layer for converting the laser beam L1 into the converted beam CB1 and reflecting the converted beam CB1 to the first filter element 150, and a light transmission region for transmitting a part of the laser beam L1 to the light transmission module 160, and the wavelength conversion region may be manufactured by any one of the manufacturing methods of the second to fourth embodiments, in which the wavelength conversion substance, such as red-green phosphor, is uniformly mixed and distributed in the wavelength conversion region. The high reflection mirror 161 is, for example, a blue high reflection mirror. The second filter element 170 is, for example, a color filter wheel 190.
Referring to fig. 12 again, the specific working process of the projection apparatus of the embodiment is that, in the first time interval, after the laser light source unit 130 emits the laser light beam L1 (for example, blue light), the laser light beam L1 sequentially passes through the diffusion element 140 and the first filter element 150 to irradiate the fluorescent wheel FW, at this time, the fluorescent wheel FW is cut into the light-transmitting area, the laser light beam L1 penetrates through the fluorescent wheel FW, is guided to the first filter element 150 by the light transmission module 160, and is transmitted to the filter color wheel 190, at this time, the blue light filter BR of the filter color wheel 190 is cut into the transmission path of the laser light beam L1 for the laser light beam L1 to penetrate and transmit to the light homogenizing element 180, and the light homogenizing element 180 homogenizes the transmitted laser light beam L1.
In the second time interval, after the laser light source unit 130 emits the laser light beam L1 (for example, blue light), the laser light beam L1 sequentially passes through the diffusion element 140 and the first filter element 150 to irradiate the fluorescent wheel FW, at this time, the fluorescent wheel FW is cut into the wavelength conversion region, the laser light beam L1 passes through the phosphor powder in the excitation wavelength conversion region to form a converted light beam CB1 and reflects the converted light beam CB1 to the first filter element 150, the first filter element 150 reflects the converted light beam CB1 to the color wheel filter 190, at this time, the green light filter GR of the color wheel filter 190 is cut into the transmission path of the converted light beam CB1 to allow the green light in the converted light beam CB1 to partially penetrate through to form a green light beam GL and transmit the green light beam GL to the light element 180, and the green light beam GL is homogenized by the homogenizing element 180.
In a third time interval, after the laser light source unit 130 emits the laser light beam L1 (for example, blue light), the laser light beam L1 sequentially passes through the diffusion element 140 and the first filter element 150 to irradiate the fluorescent wheel FW, at this time, the fluorescent wheel FW is cut into the wavelength conversion region, the laser light beam L1 excites the phosphor in the wavelength conversion region to form a converted light beam CB1 and reflects the converted light beam CB1 to the first filter element 150, the first filter element 150 reflects the converted light beam CB1 to the filter color wheel 190, at this time, the red filter region RR of the filter color wheel 190 is cut into the transmission path of the converted light beam CB1 to allow the red light portion in the converted light beam CB1 to penetrate through, form a red light beam RL and transmit the red light beam RL to the dodging element 180, and the dodging element 180 performs dodging on the transmitted red light beam RL.
In this embodiment, the wavelength conversion region in the fluorescent wheel FW can be manufactured by any process of the second to fourth embodiments, and the dense distribution of the fluorescent powder in the wavelength conversion region reduces the spot size of the converted light beam CB1, so that the brightness of the converted light beam can be effectively improved, and the brightness of the projected image can be further improved. In addition, the surface of the wavelength conversion region is free of colloid, so that compared with the conventional wavelength conversion element, the situation that the brightness loss occurs due to the fact that the laser beam L1 passes through the surface adhesive layer when entering the wavelength conversion region can be improved, and the situation that the image brightness is reduced is further improved.
In summary, the embodiments of the invention have at least one of the following advantages or effects. In the high-temperature-resistant optical wavelength conversion device, the internal structure of the wavelength conversion layer is changed through pressing or free accumulation or an inorganic process, the wavelength conversion material and the adhesive are improved to be uniformly and compactly distributed integrally, the laser resistance and the high-temperature resistance of the wavelength conversion layer are further effectively improved, and the service life of the optical wavelength conversion device is prolonged. In the projection device of the invention, because the high-temperature resistant optical wavelength conversion device is arranged, the brightness of the laser beam is effectively improved, and the projection brightness of the projection device can be further improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (13)
1. A high temperature resistant optical wavelength conversion device includes a substrate and a wavelength conversion layer disposed on the substrate; it is characterized in that the preparation method is characterized in that,
the wavelength conversion layer comprises a wavelength conversion material and an adhesive, the wavelength conversion material is fully mixed in the adhesive, the wavelength conversion material comprises a plurality of fluorescent powder particles, part or all of the fluorescent powder particles protrude out of the surface layer of the wavelength conversion layer to form a rough surface, and the distance between two adjacent fluorescent powder particles in a laser irradiation area is not more than 2 times of the average diameter of the fluorescent powder particles.
2. The refractory light wavelength conversion device of claim 1, wherein the adhesive is an organic glue or an inorganic glue.
3. The refractory light wavelength conversion device of claim 2, wherein the wavelength conversion material and the organic glue are mixed in a volume ratio of 0.6: mixing well between 1 and 10: 1.
4. The refractory light wavelength conversion device of claim 2, wherein the wavelength conversion material and the inorganic glue are mixed in a volume ratio of 4: mixing well between 1 and 10: 1.
5. The device of claim 3, wherein the organic gel is an epoxy silica gel, a methyl silica gel, a phenyl silica gel, or a silica gel containing one or more of the foregoing.
6. The device of claim 4, wherein the inorganic glue is a water-soluble inorganic glue or an alcohol-soluble inorganic glue.
7. The refractory light wavelength conversion device of claim 1, wherein the wavelength conversion material is one or more of YAG, GaAG, LuAG, and S/CASN nitride phosphor.
8. The refractory light wavelength conversion device of claim 1, wherein the substrate is a transmissive substrate or a reflective substrate.
9. A preparation method of a high-temperature-resistant optical wavelength conversion device is characterized by comprising the following steps: comprises that
Mixing the wavelength conversion material and the organic glue according to the volume ratio of 0.6:1 to 10: 1;
coating the substrate with the wavelength conversion layer;
and scraping the adhesive layer on the surface layer of the wavelength conversion layer to enable the wavelength conversion material to partially or completely protrude out of the surface layer of the wavelength conversion layer.
10. The method of claim 9, wherein the adhesive is silica gel, the wavelength conversion material and the silica gel are fully mixed in a mixing volume of 1:1, and a volume ratio of the wavelength conversion material to the silica gel after scraping is 1.25: 1.
11. A preparation method of a high-temperature-resistant optical wavelength conversion device is characterized by comprising the following steps: comprises that
Depositing a wavelength converting material on a substrate;
coating organic glue on the surface of the wavelength conversion material, and enabling the organic glue to penetrate into the wavelength conversion material to form a wavelength conversion layer until the wavelength conversion material particles partially or completely protrude out of the bonding layer, wherein the volume ratio of the wavelength conversion material to the organic glue is 0.6:1 to 10: 1.
12. A method for preparing a high-temperature resistant optical wavelength conversion device is characterized by comprising
Fully mixing the wavelength conversion material and the inorganic adhesive according to the volume ratio of 4:1 to 10:1,
coating the substrate with the wavelength conversion layer;
and the inorganic glue is evaporated and shrunk to reduce the glue amount among the wavelength conversion material particles on the surface layer of the wavelength conversion layer, so that the wavelength conversion material particles partially or completely protrude out of the surface layer of the wavelength conversion layer.
13. A projection device is characterized by comprising a laser light source unit and a fluorescent wheel; wherein,
the laser light source unit is used for emitting laser beams;
the fluorescent wheel includes a wavelength conversion region, the wavelength conversion region being the refractory light wavelength conversion device of any one of claims 1-8, the wavelength conversion region being for converting a laser beam into a converted beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010935642.6A CN111999974A (en) | 2020-09-08 | 2020-09-08 | High-temperature-resistant optical wavelength conversion device, preparation method and projection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010935642.6A CN111999974A (en) | 2020-09-08 | 2020-09-08 | High-temperature-resistant optical wavelength conversion device, preparation method and projection device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111999974A true CN111999974A (en) | 2020-11-27 |
Family
ID=73468936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010935642.6A Pending CN111999974A (en) | 2020-09-08 | 2020-09-08 | High-temperature-resistant optical wavelength conversion device, preparation method and projection device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111999974A (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105805699A (en) * | 2014-12-30 | 2016-07-27 | 深圳市绎立锐光科技开发有限公司 | Manufacturing method for wavelength conversion device |
CN109459907A (en) * | 2017-09-06 | 2019-03-12 | 精工爱普生株式会社 | Wavelength changing element, light supply apparatus and projector |
CN110579933A (en) * | 2018-06-11 | 2019-12-17 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN110579932A (en) * | 2018-06-11 | 2019-12-17 | 中强光电股份有限公司 | wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN110703551A (en) * | 2018-07-09 | 2020-01-17 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN110716376A (en) * | 2018-07-13 | 2020-01-21 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN111077667A (en) * | 2018-10-22 | 2020-04-28 | 中强光电股份有限公司 | Wavelength conversion module, method for forming wavelength conversion module, and projection apparatus |
CN111474815A (en) * | 2019-01-23 | 2020-07-31 | 中强光电股份有限公司 | Wavelength conversion device and projection device |
-
2020
- 2020-09-08 CN CN202010935642.6A patent/CN111999974A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105805699A (en) * | 2014-12-30 | 2016-07-27 | 深圳市绎立锐光科技开发有限公司 | Manufacturing method for wavelength conversion device |
CN109459907A (en) * | 2017-09-06 | 2019-03-12 | 精工爱普生株式会社 | Wavelength changing element, light supply apparatus and projector |
CN110579933A (en) * | 2018-06-11 | 2019-12-17 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN110579932A (en) * | 2018-06-11 | 2019-12-17 | 中强光电股份有限公司 | wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN110703551A (en) * | 2018-07-09 | 2020-01-17 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN110716376A (en) * | 2018-07-13 | 2020-01-21 | 中强光电股份有限公司 | Wavelength conversion element, projection device and manufacturing method of wavelength conversion element |
CN111077667A (en) * | 2018-10-22 | 2020-04-28 | 中强光电股份有限公司 | Wavelength conversion module, method for forming wavelength conversion module, and projection apparatus |
CN111474815A (en) * | 2019-01-23 | 2020-07-31 | 中强光电股份有限公司 | Wavelength conversion device and projection device |
Non-Patent Citations (1)
Title |
---|
李月锋 邹军: "《LED热管理及散热技术应用》", 30 September 2018, 上海科学技术出版社 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN205447345U (en) | Wavelength converters and light source system | |
JP6019842B2 (en) | Method for manufacturing wavelength conversion member, wavelength conversion member and light emitting device | |
JP5334573B2 (en) | Light emission conversion type LED | |
CN105093776A (en) | Wavelength conversion device, light source system and projection system | |
CN105278225A (en) | Wavelength conversion device, manufacture method thereof, correlative light-emitting device, and projection system | |
KR20130031878A (en) | Light source device | |
CN106206904A (en) | A kind of Wavelength converter, fluorescence colour wheel and light-emitting device | |
JP6241517B2 (en) | Wavelength conversion member, light emitting device, and method of manufacturing wavelength conversion member | |
WO2016173525A1 (en) | Wavelength conversion device, light-emitting device and projecting device | |
CN111077667B (en) | Wavelength conversion module, method for forming wavelength conversion module, and projection apparatus | |
CN105301878A (en) | Wavelength conversion device, and preparation method, related light emitting device and projections system thereof | |
JPWO2017077739A1 (en) | Luminescent body, light emitting apparatus, lighting apparatus, and method of manufacturing luminous body | |
CN105425523A (en) | Laser light source and laser projection apparatus | |
CN104460008A (en) | Light emitting device | |
KR20180095645A (en) | Wavelength converting member and light emitting device | |
KR20180083380A (en) | Wavelength converting member and light emitting device | |
CN205842322U (en) | A kind of luminescent device and light source | |
CN111999974A (en) | High-temperature-resistant optical wavelength conversion device, preparation method and projection device | |
CN102721005A (en) | Wavelength conversion device and light-emitting device | |
EP3465844A1 (en) | Light converting device | |
CN110388578A (en) | A kind of laser lighting light source | |
WO2019153620A1 (en) | Wavelength conversion device | |
CN215264353U (en) | Wavelength conversion device and light source system | |
WO2023087794A1 (en) | Light source system | |
CN110687674B (en) | Wavelength conversion module, method for forming wavelength conversion module, and projection apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |