CN111996593A - Diamond growth position control method and device based on PLC - Google Patents

Diamond growth position control method and device based on PLC Download PDF

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Publication number
CN111996593A
CN111996593A CN202010773709.0A CN202010773709A CN111996593A CN 111996593 A CN111996593 A CN 111996593A CN 202010773709 A CN202010773709 A CN 202010773709A CN 111996593 A CN111996593 A CN 111996593A
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growth
seed crystal
diamond
stage position
growth stage
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CN111996593B (en
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任泽阳
杨士奇
张金风
张进成
苏凯
何琦
郝跃
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Fushanju Chaozuan Semiconductor Technology (Shandong) Co.,Ltd.
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Xidian University
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a diamond growth position control method and a device based on a PLC (programmable logic controller), wherein the control method comprises the following steps: obtaining a first growth temperature value of the vacuum cavity and a first growth stage position of the seed crystal carrier plate during diamond growth at the current moment; determining a second growth stage position of the crystal load disk according to the first growth temperature value based on a preset growth stage position and growth temperature information formula table; controlling the movement of the tray of seed crystal carriers from the first growth stage position to the second growth stage position. The control method determines the seed crystal carrying disk position according to the first vacuum cavity temperature value on the basis of a preset growth stage position and growth temperature information formula table, so that the position of the seed crystal carrying disk is positioned, manual adjustment according to experience is avoided, the positioning precision is high, the error is small, the uncertainty factor of seed crystal growth is reduced, and the diamond seed crystal with good quality can be grown.

Description

Diamond growth position control method and device based on PLC
Technical Field
The invention belongs to the technical field of diamond preparation, and particularly relates to a diamond growth position control method and device based on a Programmable Logic Controller (PLC).
Background
Diamond, as a wide band gap semiconductor material, has many unusual properties, such as a large forbidden band width, a low dielectric constant, a high breakdown voltage, a high electron-hole mobility, a high thermal conductivity, and an excellent radiation resistance, and is chemically stable. All of these physical, chemical and electrical properties have led to the wide application of diamond in many areas of industry and civilian use.
The existing methods for artificially synthesizing diamond include high temperature high pressure process (HTHP), direct current arc plasma spraying process (DCAPJ), hot filament chemical vapor deposition process (HFCVD), microwave plasma chemical vapor deposition process (MPCVD), etc. Among them, MPCVD is the preferred method for preparing high quality diamond because of the good controllability of microwave-excited plasma, high plasma density and no electrode contamination.
However, in the conventional method for controlling diamond growth, the operator is required to adjust the position of the surface of the seed crystal in real time based on experience as the thickness of the seed crystal increases, and the artificial operation error is large, so that the uncertainty factor of seed crystal growth is large, and the quality of seed crystal growth is poor.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a diamond growth position control method and a diamond growth position control device based on a PLC. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a diamond growth position control method based on a PLC (programmable logic controller), which comprises the following steps of:
obtaining a first growth temperature value of the vacuum cavity and a first growth stage position of the seed crystal carrier plate during diamond growth at the current moment;
determining a second growth stage position of the crystal load disk according to the first growth temperature value based on a preset growth stage position and growth temperature information formula table;
controlling the movement of the tray of seed crystal carriers from the first growth stage position to the second growth stage position.
In one embodiment of the present invention, obtaining a first growth temperature value for a vacuum chamber at a current moment in diamond growth and a first growth phase position of a seed crystal carrier disk comprises:
obtaining a diamond seed crystal thickness, a diamond growth initial position, a preset growth stage position and growth temperature information formula table;
the seed crystal slide tray was controlled to move to the growth initiation position according to the diamond seed thickness.
In one embodiment of the invention, controlling the movement of the seed crystal slide to the growth initiation position according to the diamond seed crystal thickness comprises:
calculating a target travel distance of the round crystal carrier according to the diamond round crystal thickness;
the seed slide tray was controlled to move the target travel distance until the seed slide tray moved to the growth initiation position.
In one embodiment of the present invention, determining a second growth phase position of the seed crystal carrier disk from the first growth temperature value based on a predetermined growth phase position and growth temperature information recipe table includes:
comparing the first growth temperature value with the standard growth temperature in the preset growth stage position and growth temperature information formula table;
when the first growth temperature value is equal to the standard growth temperature, acquiring a standard growth stage position corresponding to the standard growth temperature from the preset growth stage position and growth temperature information formula table to obtain a second growth stage position; when the first growth temperature value is not equal to the standard growth temperature, the first growth stage position is equal to the second growth stage position.
In one embodiment of the present invention, controlling the movement of the seed crystal carrier disk from the first growth stage position to the second growth stage position comprises:
controlling the seed crystal carrier disk to move from the first growth stage position while obtaining a position value detected by an encoder;
stopping movement of the seed crystal carrier disk when the position value is determined to be equal to the second growth stage position.
Another embodiment of the present invention provides a PLC-based diamond growth position control apparatus, including:
the growth position parameter acquisition module is used for acquiring a first growth temperature value of the vacuum cavity and a first growth stage position of the seed crystal carrier disk during diamond growth at the current moment;
the seed crystal carrier disk position determining module is used for determining a second growth stage position of the seed crystal carrier disk according to the first growth temperature value based on a preset growth stage position and growth temperature information recipe table;
a control move module to control movement of the load tray from the first growth stage position to the second growth stage position.
In one embodiment of the present invention, further comprising:
the growth information acquisition module is used for acquiring the diamond seed crystal thickness, the diamond growth initial position, and a preset growth stage position and growth temperature information formula table;
an initial position positioning module to control movement of the seed slide tray to the growth initial position according to the diamond seed thickness.
In one embodiment of the present invention, the seed slide tray position determining module includes:
the comparison module is used for comparing the first growth temperature value with the standard growth temperature in the preset growth stage position and growth temperature information formula table;
a growth stage position obtaining module, configured to obtain a standard growth stage position corresponding to the standard growth temperature from the preset growth stage position and growth temperature information formulation table to obtain the second seed crystal carrier tray position when the first growth temperature value is equal to the standard growth temperature; when the first vacuum cavity temperature value is not equal to the growth temperature, the first seed crystal carrier disk position is equal to the second seed crystal carrier disk position.
In one embodiment of the present invention, the control movement module includes:
a moving position obtaining module for controlling the seed crystal carrier disk to move from the first growth stage position and obtaining the position value detected by the encoder;
and the judging module is used for controlling the seed crystal carrying disk to stop moving when the position value is judged to be equal to the second growth stage position.
Compared with the prior art, the invention has the beneficial effects that:
the control method determines the position of the seed crystal carrier disk according to the first vacuum cavity temperature value on the basis of a preset growth stage position and growth temperature information recipe table, so that the position of the seed crystal carrier disk is positioned, manual adjustment according to experience is avoided, the positioning precision is high, the error is small, the uncertain factor of seed crystal growth is reduced, and the diamond seed crystal with good quality can be grown.
Drawings
Fig. 1 is a schematic flow chart of a method for controlling a diamond growth position based on a PLC according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of another method for controlling a diamond growth position based on a PLC according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a diamond growth position control device based on a PLC according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for controlling a diamond growth position based on a PLC according to an embodiment of the present invention. The diamond growth position control method based on the PLC comprises the following steps:
s1, obtaining a first growth temperature value of the vacuum cavity during diamond growth at the current moment and a first growth stage position of the seed crystal carrier disk.
Specifically, in the process of diamond growth, the growth position parameters of the diamond need to be detected in real time so as to ensure that the surface of the diamond on the seed crystal carrying disk is always positioned on a reference plane and ensure the growth quality of the diamond; wherein the parameters of the growth position of the diamond comprise the temperature value of the vacuum cavity and the growth stage position of the seed crystal carrier disk. In this embodiment, an infrared thermometer is used to collect the growth temperature value of the vacuum cavity during diamond growth in real time, and an encoder is used to collect the growth stage position during diamond growth in real time.
Further, the current moment refers to any moment of diamond growth, the first growth temperature value refers to a growth temperature value at any moment, and the growth stage position refers to a growth stage position at any moment. That is, at any time of diamond growth, a first growth temperature value collected by the infrared thermometer and a first growth stage position collected by the encoder are acquired. In this embodiment, a PLC control module is used to obtain a first growth temperature value and a first growth stage position.
When the diamond growth is actually carried out, firstly, a growth temperature value and a growth stage position at a first moment (the moment when the diamond growth is started) are obtained, then, a growth temperature value and a growth stage position at a second moment are obtained, and the rest is done until the diamond stops growing.
S2, determining a second growth stage position of the seed crystal carrier disk based on the first growth temperature value based on a predetermined growth stage position and growth temperature information recipe table. The method specifically comprises the following steps:
and S21, comparing the first growth temperature value with the standard growth temperature in the preset growth stage position and growth temperature information formula table.
Specifically, a preset growth stage position and growth temperature information formula table is input into the PLC control module in advance, the formula table is of a matrix structure, each row comprises growth time, growth temperature under the growth time and a growth stage position corresponding to the growth temperature, and the columns represent the temperature and seed crystal carrier disk position in the vacuum cavity of each growth stage; the rows are generally arranged from top to bottom according to the growth starting stage and the growth stopping stage, reading is started from the first row during reading, and the value read by the first row is compared with the growth position parameter obtained at the first moment.
Wherein, the number of each column can be adjusted manually according to different growth processes; for example, by growing diamonds with thicknesses of 10mm and 20mm, respectively, the number of each column in a prescription table with a thickness of 20mm may be greater than that in a prescription table with a thickness of 10 mm; as another example, diamond was grown to a thickness of 15mm, but the number of each column for the two formulations could be different. The growth temperature and growth stage position in each formula table are the standard growth temperature and standard growth stage position of the diamond product.
Further, after the PLC control module obtains a first growth temperature value and a first growth stage position, a standard growth temperature value corresponding to the first growth temperature value is inquired in the formula table, the first growth temperature value is compared with the inquired standard growth temperature, the growth stage of the diamond at the moment is judged, and then the position of the seed crystal carrier disc corresponding to the growth stage is determined.
S22, when the first growth temperature value is equal to the standard growth temperature, obtaining a standard growth stage position corresponding to the standard growth temperature from a preset growth stage position and growth temperature information formula table to obtain a second seed crystal carrier disk position; when the first vacuum chamber temperature value is not equal to the growth temperature, the first seed crystal carrier disk position is the same as the second seed crystal carrier disk position.
Specifically, if the first growth temperature value is equal to the standard growth temperature, the PLC control module searches for a standard growth stage position corresponding to the standard growth temperature through the recipe table, where the standard growth stage position is the second growth stage position. If the first growth temperature value is not equal to the standard growth temperature, the diamond growth does not reach the next stage, and the position of the first growth stage is kept unchanged, namely the position of the first growth stage is the position of the second growth stage.
S3, controlling the transport tray to move from the first growth stage position to the second growth stage position. The method specifically comprises the following steps:
s31, the seed carrier disk is controlled to move from the first growth stage position while the detection value of the encoder is obtained.
Specifically, when the second growth stage position is determined, the PLC controls the elevator motor to operate, the elevator motor controls the movement of the seed crystal carrier disk from the first growth stage position, and simultaneously, the encoder connected to the elevator motor and the seed crystal carrier disk simultaneously detects the moving direction, moving speed, and position value of the seed crystal carrier disk, and the PLC control module acquires the detected values. Wherein, in the growth process of the diamond, the seed crystal carrying disk moves downwards along the vertical direction with the increase of the growth thickness of the diamond, the moving speed of the seed crystal carrying disk is about 0.01mm/min, the moving distance of the seed crystal carrying disk each time is 0.01-2 mm, and the total moving distance is less than 40 mm.
S32, stopping moving the seed crystal carrier disk when the position value is equal to the second growth stage position.
Specifically, when the position number detected by the encoder is equal to the second growth stage position, the seed crystal carrier disk is moved to the target position, and at this time, the movement of the seed crystal carrier disk is stopped, and the next stage of diamond growth is performed.
Further, the steps are repeated continuously during the next stage of diamond growth, and the position of the seed crystal carrier disk is monitored and adjusted in real time, namely, the encoder always detects the position of the seed crystal carrier disk during the diamond growth, and the infrared thermometer collects the vacuum cavity temperature value in real time, so that the position of the seed crystal carrier disk is always positioned along with the vacuum cavity temperature according to the relation in the formula during the diamond growth.
The control method of this embodiment determines the first growth stage position of the seed crystal carrier disk according to the first temperature value of the vacuum cavity based on the preset growth stage position and growth temperature information recipe table, thereby realizing positioning of the position of the seed crystal carrier disk, avoiding manual adjustment according to experience, having high positioning accuracy and small error, reducing uncertainty factor of seed crystal growth, and growing the seed crystal of diamond with better quality.
Example two
On the basis of the first embodiment, please refer to fig. 2, and fig. 2 is a schematic flow chart of another method for controlling a diamond growth position based on a PLC according to an embodiment of the present invention. The diamond growth position control method based on the PLC comprises the following steps:
s1, obtaining the diamond seed crystal thickness, the diamond growth initial position and the preset growth stage position and growth temperature information formula table.
Before the diamond grows, growth position parameters need to be set, and the initial position of the diamond growth is determined, so that the position of the diamond in the subsequent growth stage can be controlled conveniently.
Specifically, a diamond seed crystal having a thickness to be grown was placed on a seed crystal carrier disk, the diamond seed crystal thickness was recorded, and a PLC control module obtained the diamond seed crystal thickness; meanwhile, the growth initial position, the growth stage position and the growth temperature information formula table of the diamond are input through an upper computer, and the PLC control module obtains the growth initial position and the formula table.
S2, moving the seed load plate to the growth initiation position according to the diamond seed thickness control.
S21, calculate the target distance of the seed slide disk travel based on the diamond seed thickness.
In particular, the surface of the diamond positioned on the seed crystal carrier plate was always located at the reference plane during diamond growth, while the surface of the seed crystal carrier plate was located at the reference plane before placing the diamond seed crystal, so that the target distance for descending the seed crystal carrier plate after placing the diamond seed crystal was the same as the thickness of the diamond seed crystal so that the surface of the diamond seed crystal was located at the reference plane.
S22, the seed slide tray was controlled to move the target distance until the seed slide tray moved to the growth initiation position.
Specifically, the PLC control module controls the operation of the lifting motor, the lifting motor controls the seed crystal carrying disk to move from a moving target distance, the encoder detects the moving distance of the seed crystal carrying disk at the same time until a numerical value detected by the encoder is equal to the target distance, at the moment, the seed crystal carrying disk descends to a growth initial position, and the PLC control module controls the lifting motor to stop operating, and the seed crystal carrying disk stops descending.
S3, obtaining a first growth temperature value of the vacuum cavity during diamond growth at the current moment and a first growth stage position of the seed crystal carrier disk.
S4, determining a second growth stage position of the seed crystal carrier disk based on the first growth temperature value based on a predetermined growth stage position and growth temperature information recipe table.
S5, controlling the transport tray to move from the first growth stage position to the second growth stage position.
Please refer to the first embodiment for the specific implementation of steps S3-S4, which is not described in detail herein.
The control method of the embodiment positions the initial growth position of the diamond seed crystal according to the thickness of the diamond seed crystal before diamond growth, has high positioning precision and small error, is beneficial to controlling the position of the diamond growth stage in the subsequent process, reduces the uncertainty factor of seed crystal growth, and obtains the diamond seed crystal with good quality after growth.
EXAMPLE III
On the basis of the first embodiment and the second embodiment, please refer to fig. 3, and fig. 3 is a schematic structural diagram of a PLC-based diamond growth position control device according to an embodiment of the present invention. This diamond growth position control device based on PLC includes: growth information acquisition module 301, initial position positioning module 302, growth position parameter acquisition module 303, seed crystal loading tray position determination module 304, and control move module 305.
Specifically, growth information acquisition module 301 is configured to acquire a diamond seed crystal thickness, a diamond growth initial position, and a predetermined growth stage position and growth temperature information recipe table. Initial position positioning module 302 is used to control the movement of the seed tray to a growth initial position according to the diamond seed thickness. The growth position parameter obtaining module 303 is configured to obtain a first growth temperature value of the vacuum cavity and a first growth stage position of the seed crystal carrier disk during diamond growth at a current time. The seed crystal carrier disk position determining module 304 is configured to determine a second growth phase position of the seed crystal carrier disk according to the first growth temperature value based on a preset growth phase position and growth temperature information recipe table. Control move module 305 is used to control the movement of the load tray from the first growth stage position to the second growth stage position.
Further, seed tray position determination module 304 includes a comparison module and a growth phase position acquisition module. The comparison module is used for comparing the first growth temperature value with a standard growth temperature in a preset growth stage position and growth temperature information formula table. The growth stage position obtaining module is used for obtaining a standard growth stage position corresponding to the standard growth temperature from a preset growth stage position and growth temperature information formula table when the first growth temperature value is equal to the standard growth temperature, so as to obtain a second seed crystal carrier disk position; when the first vacuum chamber temperature value is not equal to the growth temperature, the first seed crystal carrier disk position is the same as the second seed crystal carrier disk position.
Further, the control movement module 305 includes a movement position acquisition module and a determination module. The moving position obtaining module is used for controlling the seed crystal carrier disk to move from the position of the first growth stage and obtaining the position value detected by the encoder. And the judging module is used for controlling the seed crystal carrying disk to stop moving when the numerical value of the judging position is equal to the position of the second growth stage.
The control device of this embodiment determines the first growth stage position of the seed crystal carrier disk according to the first temperature value of the vacuum cavity on the basis of the preset growth stage position and growth temperature information recipe table, thereby realizing positioning of the position of the seed crystal carrier disk, avoiding manual adjustment according to experience, having higher positioning accuracy and smaller error, reducing uncertainty factor of seed crystal growth, and thus growing and obtaining good-quality diamond seed crystal.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (9)

1. A diamond growth position control method based on PLC is characterized by comprising the following steps:
obtaining a first growth temperature value of the vacuum cavity and a first growth stage position of the seed crystal carrier plate during diamond growth at the current moment;
determining a second growth stage position of the crystal load disk according to the first growth temperature value based on a preset growth stage position and growth temperature information formula table;
controlling the movement of the tray of seed crystal carriers from the first growth stage position to the second growth stage position.
2. The PLC-based diamond growth position control method according to claim 1, wherein obtaining the first growth temperature value of the vacuum chamber at the current moment in diamond growth and before the first growth stage position of the seed crystal carrier disk comprises:
obtaining a diamond seed crystal thickness, a diamond growth initial position, a preset growth stage position and growth temperature information formula table;
the seed crystal slide tray was controlled to move to the growth initiation position according to the diamond seed thickness.
3. The PLC-based diamond growth position control method of claim 2, wherein controlling the movement of the grain slide tray to the growth initiation position according to the diamond grain thickness comprises:
calculating a target travel distance of the round crystal carrier according to the diamond round crystal thickness;
the seed slide tray was controlled to move the target travel distance until the seed slide tray moved to the growth initiation position.
4. The PLC-based diamond growth position control method according to claim 1, wherein determining the second growth stage position of the seed crystal carrier plate from the first growth temperature value based on a preset growth stage position and growth temperature information recipe table comprises:
comparing the first growth temperature value with the standard growth temperature in the preset growth stage position and growth temperature information formula table;
when the first growth temperature value is equal to the standard growth temperature, acquiring a standard growth stage position corresponding to the standard growth temperature from the preset growth stage position and growth temperature information formula table to obtain a second growth stage position; when the first growth temperature value is not equal to the standard growth temperature, the first growth stage position is the same as the second growth stage position.
5. The PLC-based diamond growth position control method of claim 1, wherein controlling the motion of the disk of seed crystal carrier from the first growth stage position to the second growth stage position comprises:
controlling the seed crystal carrier disk to move from the first growth stage position while obtaining a position value detected by an encoder;
stopping movement of the seed crystal carrier disk when the position value is determined to be equal to the second growth stage position.
6. A diamond growth position control device based on PLC, characterized by comprising:
the growth position parameter acquisition module is used for acquiring a first growth temperature value of the vacuum cavity and a first growth stage position of the seed crystal carrier disk during diamond growth at the current moment;
the seed crystal carrier disk position determining module is used for determining a second growth stage position of the seed crystal carrier disk according to the first growth temperature value based on a preset growth stage position and growth temperature information recipe table;
a control move module to control movement of the load tray from the first growth stage position to the second growth stage position.
7. The PLC-based diamond growth position control apparatus of claim 6, further comprising:
the growth information acquisition module is used for acquiring the diamond seed crystal thickness, the diamond growth initial position, and a preset growth stage position and growth temperature information formula table;
an initial position positioning module to control movement of the seed slide tray to the growth initial position according to the diamond seed thickness.
8. The PLC-based diamond growth position control apparatus of claim 6, wherein the seed crystal carrier disk position determining module comprises:
the comparison module is used for comparing the first growth temperature value with the standard growth temperature in the preset growth stage position and growth temperature information formula table;
a growth stage position obtaining module, configured to obtain a standard growth stage position corresponding to the standard growth temperature from the preset growth stage position and growth temperature information formulation table to obtain the second seed crystal carrier tray position when the first growth temperature value is equal to the standard growth temperature; when the first vacuum cavity temperature value is not equal to the growth temperature, the first seed crystal carrier disk position is the same as the second seed crystal carrier disk position.
9. The PLC-based diamond growth position control apparatus of claim 6, wherein the control movement module comprises:
a moving position obtaining module for controlling the seed crystal carrier disk to move from the first growth stage position and obtaining the position value detected by the encoder;
and the judging module is used for controlling the seed crystal carrying disk to stop moving when the position value is judged to be equal to the second growth stage position.
CN202010773709.0A 2020-08-04 2020-08-04 Diamond growth position control method and device based on PLC Active CN111996593B (en)

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