CN111987223A - Application of ZIF-8 buffer layer in perovskite solar cell without electron transport layer - Google Patents
Application of ZIF-8 buffer layer in perovskite solar cell without electron transport layer Download PDFInfo
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- CN111987223A CN111987223A CN202010906835.9A CN202010906835A CN111987223A CN 111987223 A CN111987223 A CN 111987223A CN 202010906835 A CN202010906835 A CN 202010906835A CN 111987223 A CN111987223 A CN 111987223A
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Abstract
The invention discloses an application of a ZIF-8 buffer layer in a perovskite solar cell without an electron transport layer, wherein the ZIF-8 buffer layer is deposited on ITO (indium tin oxide), and then the perovskite light absorption layer is prepared and finally used for assembling the perovskite solar cell. A layer of MOF material ZIF-8 is added between the conductive glass and the perovskite layer, and due to the specific mesoporous structure of the MOF material ZIF-8, a channel can be provided for electron transmission, and the generation of leakage current is reduced. The buffer layer ZIF-8 has the characteristics of simple preparation, high purity, relatively high solar cell short-circuit current and the like, so that the preparation process of the perovskite solar cell is further optimized, and the cost is reduced.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to an application of a ZIF-8 buffer layer in a perovskite solar cell without an electron transport layer.
Background
Perovskite solar cells have attracted the interest of many researchers due to their low cost, simple fabrication process, and all-solid-state characteristics. The photoelectric conversion efficiency of the solar cell exceeds 25 percent in less than ten years, and the solar cell is expected to become a new generation of novel high-efficiency solar cells for large-scale commercial production. The traditional perovskite solar cell comprises three structures, namely a mesoporous structure, a planar heterojunction structure and a trans-structure. In any structure, the Electron Transport Layer (ETL), the perovskite light absorption layer, the Hole Transport Layer (HTL), the electrode material, and the like are generally used. In order to further shorten the cost and simplify the process, in recent years, people have prepared perovskite solar cells without the HTL, and good effects are achieved. Mei et al prepared lead-based perovskite, HTL-free devices with methylamine and 5-aminopentanoic acid as mixed cations with efficiencies up to 12.8%. The preparation of devices without ETL is only rarely reported, mainly because if a perovskite layer is directly deposited on conductive glass, leakage current and charge recombination are easily caused, and the photoelectric property of the battery is greatly reduced. Therefore, the perovskite solar cell without the ETL is necessary to be prepared under the condition of reducing the leakage current as much as possible, and has important significance for further promoting the commercial development of the perovskite solar cell. From the current research results, there are few reports on solving the leakage current problem of ETL-free perovskite solar cells. A layer of MOF material ZIF-8 is added between conductive glass and a perovskite layer, and due to a special mesoporous structure of the MOF material ZIF-8, a channel can be provided for electron transmission, and generation of leakage current is reduced.
At present, no relevant patent report of the application of a ZIF-8 buffer layer in a perovskite solar cell without an electron transport layer exists.
Disclosure of Invention
The invention aims to provide an application of a ZIF-8 buffer layer in a perovskite solar cell without an electron transport layer. ZIF-8 is deposited on the ITO by a simple solution soaking method, and then a perovskite light absorption layer is prepared and finally used for assembling the perovskite solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
the application of the ZIF-8 buffer layer in the perovskite solar cell without the electron transport layer is as follows: depositing a ZIF-8 buffer layer on the ITO, then preparing a perovskite light absorption layer, and finally assembling the perovskite solar cell.
The preparation method of the perovskite solar cell without the electron transport layer comprises the following steps: 0.4 mmol of Zn (NO)3)2And 0.8 mmol of 2-methylimidazole is dissolved in 100 ml of methanol, the mixture is stirred for 60 min, then clean ITO is put into the solution and soaked for 40 min, after the soaking is finished, the substrate is dried at 70 ℃ to obtain a ZIF-8 buffer layer, then a perovskite layer and a hole transport layer are prepared on the ZIF-8 buffer layer, and finally, an electrode is plated with gold, and the perovskite solar cell without the electron transport layer is assembled and used for testing the photoelectric property.
The invention has the advantages and the application: a layer of MOF material ZIF-8 is added between the conductive glass and the perovskite layer, and due to the specific mesoporous structure of the MOF material ZIF-8, a channel can be provided for electron transmission, and the generation of leakage current is reduced. The buffer layer ZIF-8 has the characteristics of simple preparation, high purity, relatively high solar cell short-circuit current and the like, so that the preparation process of the perovskite solar cell is further optimized, and the cost is reduced. The invention provides a preparation method of a perovskite solar cell without an electron transport layer by using a ZIF-8 buffer layer for the first time. The method is novel, the preparation process is simple, and the method has good commercial application development prospect.
Drawings
FIG. 1 is an XRD pattern of an experimentally synthesized ZIF-8;
FIG. 2 shows Zn associated with ZIF-8 deposition on ITO2+High power XPS spectra of ions;
FIG. 3 is a scanning electron micrograph of ZIF-8 deposited on ITO;
FIG. 4 is a graph of the photovoltaic performance of a ZIF-8 buffer layer-based preparation of a perovskite solar cell without an electron transport layer.
Detailed Description
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below. The method of the present invention is a method which is conventional in the art unless otherwise specified.
Example 1
A preparation method of a perovskite solar cell without an electron transport layer specifically comprises the following steps: 0.4 mmol of Zn (NO)3)2Dissolving 0.8 mmol 2-methylimidazole in 100 ml methanol, stirring for 60 min, adding clean ITO into the solution, soaking for 40 min, drying the substrate at 70 ℃ after soaking to obtain a ZIF-8 buffer layer, and preparing CH on the ZIF-8 buffer layer3NH3PbI3And finally, plating gold on the electrodes, and assembling the perovskite solar cell without the electron transport layer for testing the photoelectric property. Wherein the thickness of the ZIF-8 buffer layer is 20 nm, the thickness of the perovskite layer is 500 nm, the thickness of the spiro-OMeTAD hole transport layer is 100 nm, and the thickness of the gold electrode is 80 nm.
Comparative example 1
A preparation method of a ZIF-8 undeposited perovskite solar cell without an electron transport layer specifically comprises the following steps: preparation of CH directly on ITO substrate3NH3PbI3And finally, plating gold on the electrodes, and assembling the perovskite solar cell without the electron transport layer for testing the photoelectric property. Wherein the thickness of the perovskite layer is 500 nm, the thickness of the spiro-OMeTAD hole transport layer is 100 nm, and the thickness of the gold electrode is 80 nm.
Preparation of electron transport layer-free perovskite solar cell based on undeposited ZIF-8J SCIs 3.99mA/cm2,V OCThe voltage is 0.79V, the FF is 0.50 of the photoelectric performance parameters, and the highest photoelectric conversion efficiency is 1.59%; whereas the perovskite solar cell without electron transport layer prepared using ZIF-8 deposition in example 1 was obtainedJ SCIs 14.45mA/cm2,V OCThe cell performance is 0.95V, the FF is 0.52, and the highest photoelectric conversion efficiency is 7.09%, so that the photoelectric performance of the cell prepared based on the ZIF-8 deposition is greatly improved, and the ZIF-8 deposition can reduce the generation of leakage current and is beneficial to the photoelectric performance of the cell.
If the ZIF-8 is carbonized and then used for preparing the perovskite solar cell, the ZIF-8 is converted into ZnO, and the alkalinity of the ZnO can induce the deprotonation reaction of organic amine ions, so that the perovskite thin film deposited on the ZnO is easily decomposed by heating, and the improvement and the stability of the device efficiency are limited.
FIG. 1 is an XRD pattern of ZIF-8, with diffraction peaks well matched to reported literature, indicating that the sample synthesized is pure phase ZIF-8. FIG. 2 is a ZIF-8 deposition on ITO for Zn2+The high power XPS spectrum of the ion has two signal peaks at the binding energy of 1045.1 eV and 1022.01 eV, and the two signal peaks are respectively assigned to Zn by comparing with reported literature2+The ions are in transition signals of 2p1/2 and 2p3/2 level electrons, which means that a layer of ultra-thin ZIF-8 is successfully deposited on the surface of the ITO film by a solution soaking method. FIG. 3 is a scanning electron micrograph of ZIF-8 deposited on top of ITO, which shows that a layer of ZIF-8 is deposited on top of the ITO, spreading the entire layer. As shown in FIG. 4, at 100 mW/cm2Under the conditions of light intensity and AM1.5, the perovskite solar cell without the electron transport layer prepared on the basis of the ZIF-8 buffer layer is obtainedJ SCIs 14.45mA/cm2The short-circuit current of (a) is,V OCthe voltage is 0.95V, the FF is 0.52, and the highest photoelectric conversion efficiency is 7.09%.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (2)
1. The application of the ZIF-8 buffer layer in the perovskite solar cell without the electron transport layer is characterized in that the ZIF-8 buffer layer is deposited on ITO, then the perovskite light absorption layer is prepared, and finally the ZIF-8 buffer layer is used for assembling the perovskite solar cell.
2. The use according to claim 1, characterized in that it comprises in particular the following steps: 0.4 mmol of Zn (NO)3)2Dissolving 0.8 mmol 2-methylimidazole in 100 ml methanol, stirring for 60 min, adding clean ITO into the solution, soaking for 40 min, drying at 70 ℃ after soaking to obtain a ZIF-8 buffer layer, and preparing a perovskite layer and a hole transport layer on the ZIF-8 buffer layerAnd finally, plating gold on the electrodes to assemble the perovskite solar cell without the electron transport layer.
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CN113481485A (en) * | 2021-07-13 | 2021-10-08 | 南方科技大学 | Tin oxide film and preparation method thereof, and solar cell and preparation method thereof |
Citations (2)
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US20180248142A1 (en) * | 2015-08-24 | 2018-08-30 | King Abdullah University Of Science And Technology | Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof |
KR20190103040A (en) * | 2018-02-26 | 2019-09-04 | 숙명여자대학교산학협력단 | Perovskite solar cell using nanocrystalline metal-organic frameworks and method for manufacturing the same |
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US20180248142A1 (en) * | 2015-08-24 | 2018-08-30 | King Abdullah University Of Science And Technology | Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof |
KR20190103040A (en) * | 2018-02-26 | 2019-09-04 | 숙명여자대학교산학협력단 | Perovskite solar cell using nanocrystalline metal-organic frameworks and method for manufacturing the same |
Non-Patent Citations (1)
Title |
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MOHAMMAD-REZA AHMADIAN-YAZDI, ET AL.: "Interface Engineering by Employing Zeolitic Imidazolate Framework‑8 (ZIF-8) as the Only Scaffold in the Architecture of Perovskite Solar Cells", 《ACS APPLIED ENERGY MATERIALS》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113481485A (en) * | 2021-07-13 | 2021-10-08 | 南方科技大学 | Tin oxide film and preparation method thereof, and solar cell and preparation method thereof |
CN113481485B (en) * | 2021-07-13 | 2023-09-05 | 南方科技大学 | Tin oxide film and preparation method thereof, solar cell and preparation method thereof |
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