CN111986556A - Physical information hiding structure based on structural unit shape difference and preparation method thereof - Google Patents
Physical information hiding structure based on structural unit shape difference and preparation method thereof Download PDFInfo
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- G09F3/00—Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
- G09F3/02—Forms or constructions
- G09F3/0291—Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time
- G09F3/0294—Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time where the change is not permanent, e.g. labels only readable under a special light, temperature indicating labels and the like
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F3/00—Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
- G09F3/02—Forms or constructions
- G09F3/0291—Labels or tickets undergoing a change under particular conditions, e.g. heat, radiation, passage of time
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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Abstract
The invention discloses a physical information hiding structure based on structural unit shape difference and a preparation method thereof, wherein the physical information hiding structure comprises a substrate and a metal reflecting layer which are stacked from bottom to top, wherein the metal reflecting layer is provided with a plurality of structural units, and each structural unit comprises a dielectric layer arranged on the metal reflecting layer and a metal particle semi-continuous film covering the upper surface of the dielectric layer; the structural unit comprises a hidden information unit and an adjacent unit, and the absolute value of the difference between the characteristic duty cycles of the hidden information unit and the adjacent unit is less than or equal to 0.5%. Under a common light source, the hidden information unit and the adjacent unit of the physical information hiding structure of the invention present the same color, and have very high secrecy and security; and the distance between the centers of the holes of the adjacent structural units is less than 400nm, so that the structure has high information capacity in space, large hidden information capacity and wide application prospect.
Description
Technical Field
The invention relates to the technical field of information hiding, in particular to a physical information hiding structure based on structural unit shape difference and a preparation method thereof.
Background
The physical information hiding technology is a technology for hiding information by using a physical method, includes a hidden ink technology, a microdot technology (microdot) and the like, and is widely applied to the fields of anti-counterfeiting, property protection, secret communication and the like, for example, hidden anti-counterfeiting information is added into money to improve safety, and hidden property information is added into automobile parts to prevent vehicles from being stolen.
However, the conventional physical information hiding technology has a small information capacity and low security when used for hiding private information, and it is necessary to develop a physical information hiding structure having a large hidden information capacity and high security.
Disclosure of Invention
In order to overcome the defects of small hidden information capacity and low safety in the prior art, the invention provides the physical information hiding structure based on the shape difference of the structural units, and the provided physical information hiding structure has the advantages of large hidden information capacity, high safety and wide application prospect.
The invention also aims to provide a preparation method of the physical information hiding structure.
In order to solve the technical problems, the invention adopts the technical scheme that:
a physical information hiding structure based on structural unit shape difference comprises a substrate and a metal reflecting layer which are stacked from bottom to top, wherein a plurality of structural units are arranged on the metal reflecting layer, and each structural unit comprises a dielectric layer arranged on the metal reflecting layer and a metal particle semi-continuous film covering the upper surface of the dielectric layer; each structural unit is provided with a hole which penetrates through the dielectric layer and the metal particle semi-continuous film along the direction vertical to the metal reflecting layer; the distance between the centers of the holes of any two adjacent structural units is less than 400 nm;
defining the ratio of the volume of the hole to the sum of the volumes of the dielectric layer and the hole of the structural unit to which the hole belongs as a characteristic duty ratio; the structural unit comprises a hidden information unit and an adjacent unit, and the absolute value of the difference between the characteristic duty cycles of the hidden information unit and the adjacent unit is less than or equal to 0.5%.
Preferably, the structural unit further comprises a disguise unit for forming disguise information, and an absolute value of a difference between characteristic duty ratios of the disguise unit and the hidden information unit is greater than 1%.
The characteristic duty cycle of the structural unit is greater than 0 and less than 100%.
The principle is as follows:
the hidden information unit, the adjacent unit and the camouflage unit on the metal reflecting layer form a pattern. The hidden information unit and the adjacent unit present the same color, the hidden information cannot be directly detected, and only the pattern formed by the disguised unit (i.e. the disguised information formed by the disguised unit) is presented. If there is no disguising unit, no pattern is present.
After the heating treatment, the dielectric layers in the hidden information element and the adjacent element are reduced in volume and the reduction degree is different due to different hole shapes, so that a certain color difference is generated between the hidden information element and the adjacent element. Under a narrow-band light source or a monochromatic light source with a proper central wavelength, the hidden information unit and the adjacent units show brightness difference, and the pattern formed by the hidden information unit (namely the hidden information formed by the hidden information unit) can be observed by naked eyes or a camera.
Therefore, after the preparation is finished, the hidden information unit and the adjacent unit of the physical information hiding structure present the same color, the hidden information cannot be directly detected, and the hidden information hiding structure has higher confidentiality and security. The hidden information can be extracted only under a narrow-band light source or a monochromatic light source with a specific proper central wavelength after specific heating treatment. Moreover, the distance between the centers of the holes of the adjacent structural units is less than 400nm, and the physical information hiding structure has high information capacity in space, so that the physical information hiding structure has high hidden information capacity.
In the present application, the hidden information unit refers to a structure unit with hidden information; the adjacent units are structural units without hidden information, and the color of the adjacent units is the same as that of the hidden information units after the structure is prepared.
Preferably, the characteristic duty cycle of the structural unit is 1% to 80%.
The substrate may be a flat-surfaced substrate as is conventional in the art.
Preferably, the substrate is a silicon wafer or a glass sheet.
The metal reflecting layer can be made of a metal material which is silver white in a normal condition.
Preferably, the metal reflective layer is made of aluminum or silver.
Preferably, the thickness of the metal reflective layer is greater than 40 nm.
Preferably, the dielectric layer is electronic glue after development. The electronic glue can be ZEP electronic glue, ARP electronic glue or PMMA electronic glue. Preferably, the thickness of the dielectric layer is 150-1200 nm.
The metal particle semi-continuous film can be prepared from metal which absorbs visible light and is solid at normal temperature.
Preferably, the metal particle semi-continuous film is made of aluminum, silver, gold or nickel.
Preferably, the dielectric layers of any two adjacent structural units are connected with each other to form a whole.
Preferably, the metal particle semi-continuous films of any two adjacent structural units are connected with each other to form a whole.
Preferably, the dielectric layers in all the structural units on the metal reflecting layer are integrally prepared.
Preferably, the metal particle semi-continuous film in all the structural units on the metal reflective layer is integrally prepared.
The invention also provides a preparation method of the physical information hiding structure, which comprises the following steps:
s1, cleaning a substrate;
s2, preparing a metal reflecting layer: preparing a metal reflecting layer on the substrate by a thermal evaporation device, an electron beam evaporation device or a sputtering instrument;
s3, spin coating of electron beam glue: spin coating electron beam glue on the metal reflecting layer;
s4, manufacturing a layout: manufacturing a layout for electron beam etching with information to be hidden by using drawing software;
s5, electron beam etching and developing: exposing the pattern of the layout in the step S4 on the metal reflecting layer spin-coated with the electron beam glue by using electron beam etching equipment, and then developing by using a developer to obtain a developed substrate;
s6, sputtering a metal particle semi-continuous film: and sputtering a metal particle semi-continuous film on the surface of the developed substrate to obtain the physical information hiding structure.
Specifically, in step S1, the substrate is immersed in acetone, the whole is placed in an ultrasonic cleaning machine for ultrasonic cleaning for 5-10 minutes, then the acetone is changed into isopropanol and then ultrasonic cleaning is carried out for 5-10 minutes, then the isopropanol is changed into water and then ultrasonic cleaning is carried out for 5-10 minutes, finally the silicon wafer is taken out, and the surface of the silicon wafer is dried by a nitrogen gun. The isopropanol may be replaced by ethanol.
The electron beam paste in step S3 may be a ZEP electron beam paste. The thickness of the electron beam paste in step S3 may be 150-1200 nm.
The drawing software in the step S4 may be L-edit software, Matlab software, or KLayout software.
The sputtering in step S6 is performed by a sputter.
Preferably, the current for sputtering in step S6 is 3-150 mA, and the time is 20-350S.
The invention also protects a hidden information extraction method of the physical information hiding structure, which comprises the following steps: heating the physical information hiding structure by using a heat source at the temperature of more than 90 ℃, wherein the heating time is more than 1s, then irradiating the physical information hiding structure by using a narrow-band light source or a monochromatic light source, and extracting hidden information; the bandwidth of the narrow-band light source is less than or equal to 60 nm;
the wavelength of the monochromatic light source is within +/-80 nm near the wave trough wavelength of the reflection spectrum of the structural unit with the hidden information;
the wavelength of the narrow-band light source is within +/-80 nm near the wave trough wavelength of the reflection spectrum of the structural unit with the hidden information.
Compared with the prior art, the invention has the beneficial effects that:
after the preparation is finished, the hidden information unit and the adjacent unit of the physical information hiding structure show the same color, the hidden information cannot be directly detected, and the hidden information hiding structure has higher secrecy and safety. The hidden information can be extracted only under a specific narrow-band light source or a monochromatic light source with proper central wavelength after specific heating treatment; and the distance between the centers of the holes of the adjacent structural units is less than 400nm, so that the structure has high information capacity in space, large hidden information capacity and wide application prospect.
Drawings
Fig. 1 is a schematic structural diagram of a metal reflective layer, a dielectric layer and a metal particle semi-continuous film in a physical information hiding structure according to the present invention.
Fig. 2 shows that the physical information hiding structure of embodiment 1 of the present invention shows disguised information after the preparation.
Fig. 3 shows that the physical information hiding structure of embodiment 1 of the present invention is exposed to a narrow-band light source (bandwidth 10nm) with a center wavelength of 690nm after heating to extract hidden information.
Fig. 4 is a radial cross-sectional view of holes of a hidden information element, a neighboring element and a disguised element of a structural element in embodiment 1 of the present invention.
In the side view of fig. 1, the structure is a sandwich structure comprising, from bottom to top, a metal reflective layer, a dielectric layer and a metal particle semi-continuous film in this order.
Detailed Description
The present invention will be further described with reference to the following embodiments.
The raw materials in the examples are all commercially available;
reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Example 1
The embodiment provides a physical information hiding structure based on structural unit shape difference, which comprises a substrate and a metal reflecting layer, wherein the substrate and the metal reflecting layer are stacked from bottom to top, and a plurality of structural units are arranged on the metal reflecting layer. As shown in fig. 1, the structural unit includes a dielectric layer disposed on the metal reflective layer and a semi-continuous film of metal particles covering the upper surface of the dielectric layer; each structural unit is provided with a hole which penetrates through the dielectric layer and the metal particle semi-continuous film along the direction vertical to the metal reflecting layer.
The substrate can be a silicon wafer or a glass sheet; specifically, the substrate in this embodiment is a silicon wafer.
The metal reflecting layer can be prepared from aluminum or silver; specifically, in this embodiment, the metal reflective layer is made of aluminum, that is, the metal reflective layer is an aluminum thin film.
The thickness of the metal reflecting layer is more than 40 nm; specifically, the thickness of the metal reflective layer in this embodiment is 100 nm.
The dielectric layer is ZEP electronic glue. The thickness of the dielectric layer can be 150-1200 nm; specifically, the thickness of the dielectric layer in this embodiment is 380 nm.
The metal particle semi-continuous film can be prepared from aluminum, silver, gold or nickel; specifically, the semi-continuous film of metal particles in this example was prepared from aluminum.
The centers of the holes of any two adjacent structural units are less than 400 nm; specifically, in the present embodiment, the distance between the centers of the holes of any two adjacent structural units is 300 nm.
And defining the ratio of the volume of the hole to the sum of the volumes of the dielectric layer and the hole of the structural unit to which the hole belongs as the characteristic duty ratio. The structural unit comprises a hidden information unit and an adjacent unit, and the characteristic duty ratio of the hidden information unit is equal to that of the adjacent unit. Specifically, in the present embodiment, the characteristic duty ratio of the hidden information unit to the neighboring unit is 3.69%. The hidden information unit and the adjacent unit have different shapes of the holes, in this embodiment, the radial cross section of the hole of the hidden information unit is a square with rounded corners, as shown in fig. 4 (a); the holes of adjacent cells are circular in radial cross-section, as shown in fig. 4 (b).
In this embodiment, the structural unit further includes a disguise unit for forming disguise information, and an absolute value of a difference between characteristic duty ratios of the disguise unit and the hidden information unit is greater than 1%. Specifically, in this embodiment, the characteristic duty ratio of the disguise unit is 40.11%. In this embodiment, the radial cross section of the hole of the disguise unit is circular, as shown in fig. 4 (c).
The information extraction method comprises the following steps: the physical information hiding structure is heated for 1min by a heat source at 180 ℃, and then a narrow-band light source or a monochromatic light source with proper central wavelength is used as an illuminating light source of a sample to be observed by human eyes or recorded by a camera, so that the hidden information is extracted.
The physical information hiding structure of the embodiment only presents disguised information after the preparation is completed, as shown in fig. 2; whereas after the sample has been heated, it is placed under a narrow band light source (10 nm bandwidth) centered at 690nm, and hidden information can be extracted, as indicated by the "SYSU" character in the dashed box in fig. 3.
Example 2
The present embodiment provides a method for preparing the physical information hiding structure of embodiment 1, including the following steps:
s1, cleaning a substrate: namely, cleaning a silicon wafer, and washing the silicon wafer by using acetone to obtain a wafer with a thickness of 1X 1cm2Immersing the silicon wafer, putting the whole silicon wafer into an ultrasonic cleaning machine for ultrasonic cleaning for 5 minutes, then changing acetone into isopropanol and then ultrasonically cleaning for 5 minutes, then changing the isopropanol into water and ultrasonically cleaning for 5 minutes, finally taking out the silicon wafer, and drying the surface of the silicon wafer by using a nitrogen gun.
S2, preparing a metal reflecting layer: namely evaporating an aluminum film, and evaporating a layer of aluminum film with the thickness of 100nm on the cleaned silicon wafer by using thermal evaporation equipment.
S3, spin coating of electron beam glue: and spin-coating a layer of ZEP electronic glue with the thickness of about 380nm on the substrate plated with aluminum by using a spin coater.
S4, manufacturing a layout: and manufacturing a layout for electron beam etching with information to be hidden by using L-edit software. Each unit of the layout is a geometric figure with the minimum size characteristic smaller than 300nm, the center distance of adjacent units is 300nm, the duty ratio of the unit with the hidden information and the geometric figure in the adjacent unit is 3.69%, and the unit with the characteristic duty ratio different from that of the unit with the hidden information by more than 1% is used for forming the disguised information. The unit with hidden information refers to a hidden information unit. The unit for forming disguised information means a disguising unit.
S5, electron beam etching and developing: and exposing the pattern of the layout in the step S4 on the metal reflecting layer spin-coated with the electron beam glue by using electron beam etching equipment, and developing by using a developer to obtain a developed substrate.
S6, sputtering a metal particle semi-continuous film: and (3) putting the substrate subjected to the electron beam etching and developing into a sputtering instrument, and sputtering an aluminum film on the surface of the substrate, wherein the sputtering current is 100mA, and the sputtering time is 30 s. The obtained film is a metal particle semi-continuous film, so that the formed final structure is a sandwich structure comprising the metal particle semi-continuous film, a dielectric layer with a hole structure unit and a bottom metal reflecting layer, as shown in fig. 1. Thereby, the physical type information hiding structure of embodiment 1 was obtained.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. It will be apparent to those skilled in the art that other variations and modifications can be made on the basis of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A physical information hiding structure based on structural unit shape difference is characterized by comprising a substrate and a metal reflecting layer which are stacked from bottom to top, wherein the metal reflecting layer is provided with a plurality of structural units, and each structural unit comprises a dielectric layer arranged on the metal reflecting layer and a metal particle semi-continuous film covering the upper surface of the dielectric layer; each structural unit is provided with a hole which penetrates through the dielectric layer and the metal particle semi-continuous film along the direction vertical to the metal reflecting layer; the distance between the centers of the holes of any two adjacent structural units is less than 400 nm;
defining the ratio of the volume of the hole to the sum of the volumes of the dielectric layer and the hole of the structural unit to which the hole belongs as a characteristic duty ratio; the structural unit comprises a hidden information unit and an adjacent unit, and the absolute value of the difference between the characteristic duty cycles of the hidden information unit and the adjacent unit is less than or equal to 0.5%.
2. The physical-type information hiding structure of claim 1, wherein the structure unit further comprises a disguise unit for forming disguise information, and an absolute value of a difference between characteristic duty cycles of the disguise unit and the hidden information unit is greater than 1%.
3. The physical information hiding structure according to claim 1, wherein said substrate is a silicon wafer or a glass sheet.
4. The physical-type information hiding structure as claimed in claim 1, wherein said metal reflective layer is made of aluminum or silver.
5. The physical-type information hiding structure of claim 1, wherein said metal reflective layer has a thickness greater than 40 nm.
6. The physical information hiding structure of claim 1, wherein said dielectric layer is an electronic glue after development.
7. The physical-type information hiding structure according to claim 1, wherein said metal particle semi-continuous film is made of aluminum, silver, gold or nickel.
8. A method for preparing a physical information hiding structure as claimed in any one of claims 1 to 7, comprising the steps of:
s1, cleaning a substrate;
s2, preparing a metal reflecting layer: preparing a metal reflecting layer on the substrate by a thermal evaporation device, an electron beam evaporation device or a sputtering instrument;
s3, spin coating of electron beam glue: spin coating electron beam glue on the metal reflecting layer;
s4, manufacturing a layout: manufacturing a layout for electron beam etching with information to be hidden by using drawing software;
s5, electron beam etching and developing: exposing the pattern of the layout in the step S4 on the metal reflecting layer spin-coated with the electron beam glue by using electron beam etching equipment, and then developing by using a developer to obtain a developed substrate;
s6, sputtering a metal particle semi-continuous film: and sputtering a metal particle semi-continuous film on the surface of the developed substrate to obtain the physical information hiding structure.
9. The method according to claim 8, wherein the sputtering current in step S6 is 3-150 mA for 20-350S.
10. The method for extracting the hidden information of the physical information hiding structure of any one of claims 1 to 8, wherein the physical information hiding structure is heated by a heat source with a temperature of more than 90 ℃ for more than 1s, and then the physical information hiding structure is irradiated by a narrow-band light source or a monochromatic light source to extract the hidden information; the bandwidth of the narrow-band light source is less than or equal to 60 nm;
the wavelength of the monochromatic light source is within +/-80 nm near the wave bottom wavelength of the reflection spectrum of the structural unit with the hidden information;
the wavelength of the narrow-band light source is within +/-80 nm near the wave bottom wavelength of the reflection spectrum of the structural unit with the hidden information.
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