CN111979033B - Diamond wire cutting liquid for sapphire cutting - Google Patents
Diamond wire cutting liquid for sapphire cutting Download PDFInfo
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- CN111979033B CN111979033B CN202010892478.5A CN202010892478A CN111979033B CN 111979033 B CN111979033 B CN 111979033B CN 202010892478 A CN202010892478 A CN 202010892478A CN 111979033 B CN111979033 B CN 111979033B
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- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
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- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
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- C10M2207/10—Carboxylix acids; Neutral salts thereof
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- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
- C10M2207/127—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids polycarboxylic
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- C10M2209/02—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/08—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to a carboxyl radical, e.g. acrylate type
- C10M2209/086—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to a carboxyl radical, e.g. acrylate type polycarboxylic, e.g. maleic acid
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- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
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- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
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- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
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Abstract
The invention discloses diamond wire cutting liquid for sapphire cutting, and relates to the technical field of processing of semiconductor hard and brittle materials. The invention discloses diamond wire cutting fluid for sapphire cutting, which consists of the following components in percentage by weight: 35-55% of deionized water, 10-20% of water-soluble lubricant, 15-20% of wetting penetrant, 5-10% of water-soluble antirust agent, 3-6% of coupling agent, 10-15% of base number retention agent, 3-5% of complexing agent and 0.5-1.5% of defoaming agent. The diamond wire cutting liquid for sapphire cutting is suitable for a diamond wire multi-wire cutting process, the dilution rate is 20-30 times when the diamond wire cutting liquid is used, the diamond wire cutting liquid has good lubricating property, cooling property, dispersity, cleaning property, anti-rust property and foam stability in the using process, the slicing yield reaches 99%, and the wire mark, TTV value and edge breakage condition on the surface of a sapphire wafer can be effectively reduced.
Description
Technical Field
The invention belongs to the technical field of processing of semiconductor hard and brittle materials, and particularly relates to diamond wire cutting fluid for sapphire cutting.
Background
Sapphire has a series of excellent physicochemical characteristics such as high melting point (2050 ℃), high hardness (second to diamond), high temperature resistance, friction resistance, corrosion resistance, chemical stability, good light transmittance, electrical insulation and the like, and is increasingly widely applied to the fields of LED substrates, window sheets and national defense. For example, as a substrate for growing a light emitting diode, a sapphire wafer is basically used as a substrate for a light emitting diode used in a domestic LED lamp. With the continuous penetration of the artificial intelligence field in various fields, the application of sapphire as a window sheet is more and more extensive. Such as a mobile phone camera, a mobile phone screen, a watch mirror surface, various cash register devices, a window needing good light transmission and skid resistance, and the like. In the field of national defense, the sapphire crystal is an important window material for infrared military devices, missiles, submarines, satellite space technologies, high-energy detection and high-power strong laser. According to statistics, the LED consumed 77.23% of the global sapphire capacity in 2015, and then mobile phone glass, camera lens, watch and the like. At present, the LED substrate material is the first large application field of sapphire, and the future consumer electronics application represented by smart phones and the like is the market potential of the sapphire material.
The LED chip is used as the first large application field of sapphire, and has important influence on the development of the sapphire industry. The growth of the LED material needs to manufacture a gallium nitride (GaN) -based epitaxial wafer on a substrate, the growth process is mainly completed in a Metal Organic Chemical Vapor Deposition (MOCVD) epitaxial furnace, commonly used substrates mainly comprise sapphire, silicon carbide and silicon substrates, and the sapphire material occupies an absolute mainstream position of the substrate material by virtue of the advantages of good epitaxial lattice matching and high cost performance. The quality of the sapphire wafer has great influence on the growth quality of the gallium nitride epitaxial wafer and the performance and yield of the blue light diode. The first choice for high quality LED products is to ensure the quality of the substrate. Sapphire is processed into a window sheet, a substrate and the like with required precision by slicing, chamfering, grinding, surface flattening and surface treatment technologies. Slicing is a preliminary stage of sapphire processing and is also one of the most critical steps to affect the quality of subsequent wafers. Sapphire processing starts relatively late in China, and a slicing process mainly refers to a process technology of a semiconductor silicon wafer for reference, but the sapphire processing and the slicing process have essential differences. As the photovoltaic industry and the ultra-large integrated circuit industry require thinner and thinner silicon chips, the number of the abrasive materials per unit surface area of the diamond wire for cutting silicon is far greater than that of the diamond wire for cutting sapphire. Thus, while belonging to the category of diamond wire multi-wire dicing, the processing parameters and the quality of the wafer surface for the two different materials are completely different. The literature patent reports more about silicon wafer cutting. Mainly relates to multi-line cutting from original steel wire mortar cutting to diamond wires. However, research papers and patents about diamond wire cutting fluid for sapphire wafers are rarely reported.
Patent CN201810249891.2 reports a diamond wire cutting fluid for cutting silicon wafers, the invented cutting fluid has excellent lubricating and cooling properties; the patent CN109370760A reports a high-lubrication high-dilution-rate diamond wire cutting liquid and preparation thereof, the diamond wire cutting liquid provided by the invention is a high-dilution-rate diamond wire cooling liquid developed according to the requirements of thinner and thinner silicon wafers and lower processing cost in the photovoltaic industry, and the product is a mainstream product in the current silicon wafer cutting industry and has excellent cooling performance and foam inhibition capability. Patent CN201710345871 reports a low-foam water-based diamond wire cutting liquid, mainly utilizes a low-foam polyether and polyether modified siloxane formula system, invents the low-foam diamond wire cutting liquid, and solves the problems that a large amount of small-size silicon powder is easy to agglomerate when a silicon wafer is cut, so that a large amount of foam is accumulated and cannot disappear in time, the wetting dispersibility of the system is reduced, and finally the surface of the silicon wafer is cracked, line marks and other bad phenomena. However, since silicon and sapphire have different hardness and the required thickness of a silicon wafer is different from that of a sapphire wafer, the size and number of surface abrasives of diamond wires used and the diameter of the wires are different from each other, and thus, the diamond wire cutting fluid used for cutting silicon wafers is not suitable for cutting sapphire wafers. With the popularization of 5G and the development of OLED and micro LED technologies, the application of sapphire wafers in China is more and more extensive, and therefore the requirement on sapphire wafer processing technology is higher and higher. However, as a result of research on documents and patent queries, domestic studies on diamond-wire cutting fluid products for sapphire cutting are rarely reported, and studies on the influence of sapphire diamond-wire cutting fluid compositions on TTV, BOW and WARP values of wafers are not found.
The diamond wire cutting fluid is an important component of diamond wire cutting and has the following properties: (1) The lubricating property is that cutting fluid permeates into the surface of the diamond wire and the surface of the sapphire, and the lubricant in the formula reduces friction on the surface of a friction pair which moves relatively in the high-speed cutting process of the diamond wire, so that cutting damage, stress and microcrack are reduced; (2) The wetting dispersion effect and the good wetting property are beneficial to improving the cooling effect of the cutting fluid, and the heat generated by high-speed cutting can be transferred out through the circulating cutting fluid, so that the deformation of the surface of the wafer is avoided. The good wetting dispersibility can enable a large amount of sapphire powder generated in the cutting process to be dispersed and suspended in the cutting liquid in time, and the problems of broken lines, surface scratches, foams and the like caused by particle aggregation are prevented. (3) The diamond wire cutting fluid has the advantages that due to the cleaning effect, abrasive materials on the surface of the diamond wire can fall off in the cutting process, a large amount of sapphire powder is formed, and fine particles are easy to agglomerate due to high surface energy, so that the TTV value, the WARP value and the BOW value of the surface quality of a reaction wafer are large, the quality of the wafer cannot meet the requirements, and the abrasion of the diamond wire is large. The cutting fluid with good cleaning performance can take away the sapphire powder gathered on the surface of the wafer and the fallen diamond wire grinding material at any time. (4) The antirust effect is that the main material of the machine tool is ferrous metal, and a large amount of cutting fluid continuously washes the machine tool in the multi-line cutting process to be easily corroded. The antirust property of the cutting fluid can effectively prevent the machine tool machining precision from being reduced due to corrosion, and the service life of the machine tool is shortened.
In the prior art, the sapphire wafer is still processed by using cutting fluid for cutting the silicon wafer. In fact, the diamond wire unit area abrasive used for cutting the sapphire wafer is much smaller than that of the diamond wire surface used for cutting silicon, and the thickness of the sapphire wafer is much larger than that of the silicon wafer. Therefore, for sapphire cutting, a cutting fluid with higher extreme pressure lubricity, lower friction coefficient and better dispersion wettability is required. The invention aims to provide diamond wire cutting liquid specially used for cutting a sapphire wafer, which can meet the requirement of multi-wire cutting of the sapphire wafer at present.
Disclosure of Invention
The invention aims to provide diamond wire cutting fluid for sapphire cutting, which has excellent lubricating, cooling, permeating, cleaning and antirust performances, is safe and environment-friendly, has stable physical and chemical properties and high cost performance, replaces imported products, and effectively reduces the processing cost of enterprises.
In order to achieve the purpose of the invention, the invention provides diamond wire cutting fluid for sapphire cutting, which consists of the following components in percentage by weight: 35-55% of deionized water, 10-20% of water-soluble lubricant, 15-20% of wetting penetrant, 5-10% of water-soluble antirust agent, 3-6% of coupling agent, 10-15% of base number retention agent, 3-5% of complexing agent and 0.5-1.5% of defoaming agent.
Furthermore, the molecular structure of the water-soluble lubricant has long carbon chain alkyl, namely one or more of polyethylene glycol laurate, polyethylene glycol monooleate, polyethylene glycol oleate diester, dimer acid amide, potassium dimer acid, amine laurate, ammonium ricinoleate and ammonium tetrameric ricinoleate.
Further, the water-soluble antirust agent is one or more of sebacic acid, neodecanoic acid, tribasic acid and 6- (octanoyl) aminocaproic acid.
Further, the wetting penetrating agent is one or more of EO/PO block polyoxyethylene ether, polyoxyethylene and penetrating agent JFC.
Further, the coupling agent is one or more of diethylene glycol monobutyl ether, C16 Guerbet alcohol, isopropanol, C6-C8 alkyl glycoside surfactant and sodium isophenylsulfonate.
Further, the alkalinity keeping agent is one or more of monoethanolamine, monoisopropanolamine, triethanolamine and diglycolamine.
Further, the complexing agent is one or more than two of sodium tripolyphosphate, potassium pyrophosphate, diethylenetriamine pentaacetic acid, N-hydroxyethyl ethylenediamine triacetic acid, ethylene glycol-bis (beta-aminoethyl ether) -N, N, N' -tetraacetic acid (EGTA), methylglycine diacetic acid trisodium and EDTA disodium.
Further, the defoaming agent is one or more of organic silicon modified polyether esters, high-carbon alcohols and alkynol defoaming agents.
The invention achieves the following beneficial effects:
1. the diamond wire cutting fluid for sapphire processing is suitable for a diamond wire multi-wire cutting process, the dilution rate is 20-30 times when the diamond wire cutting fluid is used, and the diamond wire cutting fluid has good lubricity, cooling property, dispersibility, cleaning property, rust resistance and foam stability in the using process.
2. The diamond wire cutting fluid is used for processing the sapphire wafer, so that the slicing yield reaches 99%, and the wire mark, TTV value and edge breakage condition on the surface of the sapphire wafer can be effectively reduced.
3. The diamond wire cutting fluid for sapphire processing can effectively prolong the service life of diamond wires and improve the quality of wafers, the yield of the wafers is improved to 99.01 percent from 95.24 percent originally, the cost of enterprises in the aspect of processing the sapphire wafers is greatly reduced, and the sapphire wafers with reliable quality are provided for the epitaxial growth of gallium nitride.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A diamond wire cutting fluid for sapphire cutting is composed of the following components in percentage by weight:
35-55% of deionized water;
10 to 20 percent of water-soluble lubricant,
15 to 20 percent of wetting penetrant,
5 to 10 percent of water-soluble antirust agent,
3 to 6 percent of coupling agent,
10 to 15 percent of alkali value retention agent,
3 to 5 percent of complexing agent,
0.5 to 1.5 percent of defoaming agent.
Wherein, the molecular structure of the water-soluble lubricant has long carbon chain alkyl, namely one or more of polyethylene glycol laurate, polyethylene glycol monooleate, polyethylene glycol oleate diester, dimer acid amide, potassium dimer acid, amine laurate, ammonium ricinoleate and ammonium tetrameric ricinoleate;
the wetting penetrating agent is one or more of EO/PO block polyoxyethylene ether, polyoxyethylene and penetrating agent JFC;
the water-soluble antirust agent is one or more of sebacic acid, neodecanoic acid, tribasic acid and 6- (octanoyl) aminocaproic acid;
the coupling agent is one or more of diethylene glycol monobutyl ether, C16 Guerbet alcohol, isopropanol, C6-C8 alkyl glycoside surfactant and sodium isophenylsulfonate;
the alkalinity keeping agent is one or more of monoethanolamine, monoisopropanolamine, triethanolamine and diglycolamine;
the complexing agent is one or more than two of sodium tripolyphosphate, potassium pyrophosphate, diethylene triamine pentaacetic acid, N-hydroxyethyl ethylene diamine triacetic acid, ethylene glycol-bis (beta-aminoethyl ether) -N, N, N' -tetraacetic acid (EGTA), methyl glycine diacetic acid trisodium (MGDA) and EDTA disodium;
the defoaming agent is one or more of organic silicon modified polyether esters, high-carbon alcohols and alkynol defoaming agents.
The diamond wire cutting fluid for sapphire cutting of the present invention will be described with reference to specific embodiments.
Example 1:
starting an enamel blending kettle, stirring in a pulse mode, adding 30 kg of deionized water, then sequentially adding 3 kg of complexing agent methyl glycine diacetic acid trisodium (MGDA), 15 kg of alkaline value maintainer triethanolamine, 15 kg of diglycolamine and 7 kg of water-soluble antirust agent dodecanedioic acid, and reacting the added triethanolamine with the antirust agent completely to obtain a transparent solution. And sequentially adding 20 kg of water-soluble lubricant potassium dimer, 5 kg of wetting penetrant fatty alcohol-polyoxyethylene ether, 5 kg of coupling agent C16 Guerbet alcohol and 0.5 kg of polyether modified siloxane defoamer, stirring until the whole system is transparent and uniform, detecting key indexes such as foam, lubricity, friction coefficient, surface tension, permeability and the like, and taking out of a kettle and packaging with a plastic barrel. Example 1 the test data are shown in table-1.
Example 2
Starting an enamel blending kettle for pulse stirring, adding 40 kg of deionized water, then sequentially adding 3 kg of complexing agent EDTA disodium salt, 12 kg of alkalinity maintaining agent triethanolamine, 12 kg of diglycolamine, and 10 kg of water-soluble antirust agent sebacic acid, and allowing the added alkanolamine and antirust agent to react completely, wherein the system is a transparent solution. Then adding 15 kg of water-soluble lubricant oleic acid polyethylene glycol 400 diester, 4 kg of water-soluble penetrant JFC, 3 kg of couplant diethylene glycol monobutyl ether and 1 kg of polyether modified siloxane defoamer in sequence, stirring until the whole system is transparent and uniform, detecting key indexes such as foam, lubricity, friction coefficient, surface tension, permeability and the like, and taking out of a kettle and packaging with a plastic barrel. Example 2 the test data are shown in table-1.
Example 3
Starting an enamel blending kettle, stirring in a pulse mode, adding 42 kg of deionized water, then sequentially adding 3 kg of complexing agent sodium tripolyphosphate, 2 kg of Diethylene Triamine Pentaacetic Acid (DTPA), 10 kg of triethanolamine serving as an alkalinity maintaining agent, 8 kg of monoethanolamine, 5 kg of tribasic acid serving as a water-soluble antirust agent and 2 kg of n-decanoic acid, and reacting the added triethanolamine with the antirust agent completely to obtain a transparent solution. Then sequentially adding 5 kg of water-soluble lubricant ammonium tetrapolyricinoleate, 13 kg of lauric acid polyethylene glycol 600 ester, 5 kg of water-soluble penetrant EO/PO block polyoxyethylene ether, 4.5 kg of coupling agent sodium isophenylpropylsulfonate and 0.5 kg of alkynol defoamer, stirring until the whole system is transparent and uniform, detecting key indexes such as foam, lubricity, friction coefficient, surface tension, permeability and the like, and taking out of a kettle and packaging with a plastic barrel. Example 3 the test data are shown in table-1.
Example 4
An enamel blending kettle is started for pulse stirring, 43 kg of deionized water is added, 4 kg of complexing agent potassium pyrophosphate, 3 kg of ethylene glycol-bis (beta-aminoethyl ether) -N, N, N' -tetraacetic acid (EGTA), 10 kg of alkalinity maintaining agent triethanolamine, 10 kg of monoisopropanolamine and 6 kg of aqueous antirust agent 6- (octanoyl) aminocaproic acid are sequentially added, and the system is a transparent solution after the added alcohol amine and the antirust agent completely react. Then adding 15 kg of water-soluble lubricant dimer acid amide, 3 kg of C6-C8 alkyl glycoside surfactant, 5 kg of coupling agent diethylene glycol monobutyl ether and 1 kg of polyether modified siloxane defoamer in sequence, stirring until the whole system is transparent and uniform, detecting key indexes such as foam, lubricity, friction coefficient, surface tension, permeability and the like, and taking out of a kettle and packaging by a plastic barrel. The measurement indexes of example 4 are shown in Table-1.
Example 5
Starting an enamel blending kettle for pulse stirring, adding 50 kg of deionized water, then sequentially adding 5 kg of complexing agent EDTA-2Na, 12 kg of triethanolamine serving as an alkalinity maintaining agent, 8 kg of monoethanolamine, 5 kg of tribasic acid serving as a water-soluble antirust agent and 3 kg of neodecanoic acid, and reacting the added alkanolamine with the antirust agent completely to obtain a transparent solution. Then adding 5 kg of water-soluble lubricant oleic acid polyethylene glycol 600 monoester, 5 kg of dipotassium, 3 kg of water-soluble penetrating agent JFC, 3 kg of coupling agent C16 Guerbet alcohol and 1 kg of polyether modified siloxane defoaming agent in sequence, stirring until the whole system is transparent and uniform, detecting key indexes such as foam, lubricity, friction coefficient, surface tension, permeability and the like, and taking out of a kettle and packaging with a plastic barrel. The measurement indexes of example 5 are shown in Table-1.
Key technical indexes of the sapphire diamond wire cutting fluid are detected, and the technical indexes of comparison data between the embodiment 1-5 and products corresponding to the current local brands are shown in a table-1.
TABLE-1 Performance indices of examples 1-5 and comparative examples
According to the test results in table-1, three representative gates of the above examples 1, 3 and 5 were selected for the cutting fluids of the sapphire diamond wire, and the properties can represent the cutting fluids of all formulations related to the present invention. Slicing was performed at a sapphire processing enterprise and compared with imported products currently used by the enterprise, and the results are shown in table-2.
Table 2 performance testing of diamond wire cutting fluid and comparative cutting fluid of the present invention
From the comparative test results in table-2, it can be seen that the diamond wire cutting fluid for sapphire cutting provided by the invention has the following advantages compared with the existing imported products:
(1) The product has excellent lubricating property, the service life of the diamond wire is effectively prolonged, the diamond wire cutting liquid of the original imported brand cuts a four-inch sapphire wafer, 1111 pieces of wire can be cut by ten thousand meters of wire, namely the average length of the wire required for cutting one piece is 9 meters, 1233 pieces of wire can be cut by ten thousand meters of the diamond wire cutting liquid designed by the invention, and the average length of each piece of the required diamond wire is 8.11 meters.
(2) The product has a long service life, the cutting fluid in the provided embodiment can be recycled for 6 times, and the fluid is replaced when the current imported brand is used for 5 times. The service life of the cutting fluid is prolonged, so that the use amount and the cost of subsequent wastewater treatment can be effectively reduced.
(3) The sapphire diamond wire cutting fluid designed by the invention has good wetting dispersibility and lubricity, so that the qualification rate of wafers is effectively improved compared with imported products.
The invention can combine the cutting process of sapphire site and parameter requirements, build formula with pertinence, and endow products with excellent lubrication, cooling, infiltration and cleaning performance. The sapphire cutting fluid provided by the invention is safe and environment-friendly, has stable physical and chemical properties and high cost performance, replaces imported products, and effectively reduces the cost of processing plants of certain enterprises.
The formula of the invention is green and environment-friendly, and does not contain chemicals which have harmful effects on human bodies, soil, water sources and atmosphere. The waste cutting fluid can be precipitated and filtered to remove solid waste residues, can be directly discharged and meets the requirements of environmental protection regulations.
The technical features of the embodiments described above can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (4)
1. The diamond wire cutting liquid for cutting LED substrate sapphire is characterized by comprising the following components in percentage by weight: 35-55% of deionized water, 10-20% of water-soluble lubricant, 15-20% of wetting penetrant, 5-10% of water-soluble antirust agent, 3-6% of coupling agent, 10-15% of base number retention agent, 3-5% of complexing agent and 0.5-1.5% of defoaming agent;
the molecular structure of the water-soluble lubricant has long-chain alkyl groups, namely one or more of polyethylene glycol laurate, polyethylene glycol monooleate, polyethylene glycol diester oleate, dimer acid amide, potassium dimer, amine laurate, ammonium ricinoleate and ammonium tetrapolymer ricinoleate;
the coupling agent is one or more of diethylene glycol monobutyl ether, C16 Guerbet alcohol, isopropanol, C6-C8 alkyl glycoside surfactant and sodium isophenylsulfonate;
the wetting penetrating agent is one or more of EO/PO block polyoxyethylene ether, polyoxyethylene and penetrating agent JFC;
the defoaming agent is one or more of organic silicon modified polyether esters, high-carbon alcohols and alkynol defoaming agents.
2. A diamond wire cutting fluid for cutting LED substrate sapphire as claimed in claim 1, wherein the water-soluble antirust agent is one or more of sebacic acid, neodecanoic acid and tribasic acid.
3. A diamond wire cutting fluid for cutting LED substrate sapphire as claimed in claim 1, wherein the base number retention agent is one or more of monoethanolamine, monoisopropanolamine, triethanolamine and diglycolamine.
4. A diamond wire cutting fluid for cutting sapphire of an LED substrate according to claim 1, wherein the complexing agent is one or more of sodium tripolyphosphate, potassium pyrophosphate, diethylenetriaminepentaacetic acid, N-hydroxyethylethylenediamine triacetic acid, ethylene glycol-bis (β -aminoethyl ether) -N, N' -tetraacetic acid, trisodium methylglycinediacetate, disodium EDTA.
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| CN112980558A (en) * | 2021-03-01 | 2021-06-18 | 南宁珀源能源材料有限公司 | Sapphire cutting fluid and preparation method thereof |
| CN113528097A (en) * | 2021-08-19 | 2021-10-22 | 江苏美科太阳能科技有限公司 | Cooling liquid for cutting solar-grade silicon wafer by diamond wire in fine-line manner and preparation method of cooling liquid |
| CN115491252B (en) * | 2022-09-29 | 2023-05-02 | 江苏四新界面剂科技有限公司 | Low-foam wetting agent for precious stone cutting and preparation method thereof |
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| CN103184093B (en) * | 2011-12-29 | 2015-02-04 | 辽宁奥克化学股份有限公司 | Cutting liquid used for sapphire cutting by diamond wire |
| JP2015536379A (en) * | 2012-12-06 | 2015-12-21 | ダウ グローバル テクノロジーズ エルエルシー | Water-soluble cutting fluid composition |
| CN103450981A (en) * | 2013-08-20 | 2013-12-18 | 常州市好利莱光电科技有限公司 | Preparation method of cutting solution for machining LED (Light Emitting Diode) substrate wafer |
| CN103525531A (en) * | 2013-09-27 | 2014-01-22 | 奥克化学扬州有限公司 | Cooling liquid for carrying out crystal bar taking on sapphire |
| CN103640097A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Diamond-wire slicing method for sapphire sheets |
| CN104774679A (en) * | 2015-04-30 | 2015-07-15 | 蓝思科技（长沙）有限公司 | Environment-friendly water-based sapphire cutting fluid |
| CN110846117A (en) * | 2019-11-04 | 2020-02-28 | 南宁珀源能源材料有限公司 | Fully synthetic glass cutting fluid and preparation method thereof |
| CN111518603B (en) * | 2020-04-07 | 2023-02-10 | 广东剑鑫科技股份有限公司 | Water-based fully-synthetic sapphire glass cutting fluid and preparation method thereof |
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