CN103640097A - Diamond-wire slicing method for sapphire sheets - Google Patents
Diamond-wire slicing method for sapphire sheets Download PDFInfo
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- CN103640097A CN103640097A CN201310605397.2A CN201310605397A CN103640097A CN 103640097 A CN103640097 A CN 103640097A CN 201310605397 A CN201310605397 A CN 201310605397A CN 103640097 A CN103640097 A CN 103640097A
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- diamond
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- sapphire
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Abstract
The invention provides a diamond-wire slicing method for sapphire sheets. A sapphire crystal is stuck on the workpiece surface with the C-axis or M-axis center line as the bottom face, and the cut plane is the A-plane; cutting the sapphire crystal with the diamond wire to obtain sapphire sheets, wherein the diamond wire diameter is 0.25mm, and the diamond particle size is 30 microns to 40 microns, the wire tension is 35N, the wire speed is 12m/s, the workpiece feeding speed is 0.25 mm/min, and the cutting liquid flow is 350 ml/s. The diamond-wire slicing method is used for mobile phone panels, certain adhesive is required to stick crystal bars on a workpiece clamp capable of being fixed on a slicer according to the specific crystal orientation, the high rotation speed of a wire roller is used for driving the diamond wire to perform high-speed moving cutting from specific lattice planes.
Description
Technical field
The present invention relates to a kind of sapphire wafer diamond wire dicing method.
Background technology
The sapphire aluminium oxide (Al2O3) that consists of, to be combined into covalent bond pattern by three oxygen atoms and two aluminium atoms, its crystal structure is hexagonal lattice structure. the tangent plane that it is often employed has A-Plane, C-Plane and R-Plane. are very wide because sapphire optics penetrates band, from black light (190nm), to middle infrared (Mid-IR), all there is good light transmission. be therefore used in a large number optical element, infrared facility, on the radium-shine lens materials of high strength and photomask materials, it has the high velocity of sound, high temperature resistant, anticorrosive, high rigidity, high light transmittance, the features such as fusing point high (2045 ℃), it is a kind of suitable difficult to machine material.
The sapphire tool of Artificial Growth has good wearability, and hardness is only second to diamond and reaches 9 grades of Mohs, and sapphire compactness makes it have larger surface tension simultaneously, and above-mentioned two characteristics are very suitable for the electronic touch panels such as mobile phone.But the sapphire of Artificial Growth is processed into larger-diameter panel, need great financial cost, cause it to be difficult to extensive use and popularization, sapphire wafer fragility is higher simultaneously, and the shortcoming that impact resistance is lower has also limited its scope of application.
The diamond wire that lacks a kind of maturation in prior art cuts into the cutting method of sapphire wafer, there is easily broken string for sapphire cutting in existing diamond wire cutting method, cleavage plane surface flatness is not high and cannot once cut the sapphire wafer obtaining below 2mm.
Summary of the invention
The object of this invention is to provide a kind of sapphire wafer diamond wire cutting technique for mobile phone faceplate, this technique need to be used certain adhesive that crystal bar is sticked to a kind of work piece holder that is fixed on slicer by particular crystal orientation.From specific lattice face, with the high rotating speed of guide roller, drive the cutting of diamond wire high-speed motion.
For achieving the above object, technical scheme of the present invention is:
A sapphire wafer diamond wire dicing method, is characterized in that described dicing method comprises the following steps:
Sapphire crystal block be take to C axle or M shaft centre line and as bottom surface, stick at surface of the work, tangent plane is A face;
With diamond wire cutting sapphire crystal block, obtain sapphire wafer, wherein diamond wire wire diameter is 0.25mm, and diamond particle diameter is 30-40 μ m; Line tension is 35N, and linear velocity is 12m/s, and feed-speed is 0.25mm/min, and cutting liquid flow is 350ml/s.Inventor finds in practice, and during diamond wire cutting, when the ratio of workpiece feeding rate and linear velocity is 1:2880000, diamond wire is difficult to rupture.
Further, described cutting liquid temperature is 25 ℃ ± 2 ℃.Applicant studies and finds that cutting liquid temperature and outage are non-linear relation.
Further, described workpiece swing angle is 2-10 °, and workpiece wobble frequency is 15-40cir/min.Sapphire hardness is higher, inventor's research draws, normal line cutting process is depositing diamond particle and sapphire chip on the contact wire of diamond wire and workpiece easily, this depositional phenomenon may be one of principal element causing on diamond wire broken string, in order to solve this depositional phenomenon, suitably the workpiece of angle and frequency waves and can reduce detrital deposit; Too high swing angle and frequency tangent plane are easily lost, and are difficult for cutting out smooth tangent plane; Too low angle is difficult to play dustproof function.
Further, described workpiece swing angle is 5 °, and workpiece wobble frequency is 28cir/min.It under this condition, is optimal conditions.
The discarded crystal bar of the diamond wire that first will not put the first edge on a knife or a pair of scissors before described diamond wire cutting sapphire crystal block cutting puts the first edge on a knife or a pair of scissors.Inventor research draws, without the direct cutting sapphire crystal block of the diamond wire putting the first edge on a knife or a pair of scissors, easily collapses limit and location is inaccurate causing.
Further, described wherein diamond wire wire diameter is 0.25mm, and diamond particle diameter is 30-40 μ m, and in cutting liquid, containing particle diameter is that 20 μ m diamond particles and particle diameter are the corundum in granules of 50 μ m.
Applicant's research draws, the mixture that adds diamond particles and corundum in granules in cutting liquid, can improve the service life of diamond wire, the corundum in granules of greater particle size can be taken away being blocked in the diamond particles and the sapphire chip that deposit on the contact wire of diamond wire and workpiece simultaneously, reduces outage.
Further, described cutting liquid constituent content is as follows by weight: deionized water 100-200, and particle diameter is 20 μ m diamond particles 2-8, particle diameter is the corundum in granules 1-8 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 10-40.
Further, described cutting liquid constituent content is as follows by weight: deionized water 100, and particle diameter is 20 μ m diamond particles 8, particle diameter is the corundum in granules 8 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 40.
Further, described cutting liquid constituent content is as follows by weight: deionized water 100, and particle diameter is 20 μ m diamond particles 2, particle diameter is the corundum in granules 1 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 10.
Further, described cutting liquid constituent content is as follows by weight: deionized water 100, and particle diameter is 20 μ m diamond particles 6, particle diameter is the corundum in granules 7 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 30.
The cutting liquid formula of such scheme, is proven and can reduces outage, improves the surface smoothness of tangent plane.
The specific embodiment
Embodiment 1
Sapphire crystal block be take to C-axis and M-axis center line and as bottom surface, stick at surface of the work, tangent plane is A-plane.
Diamond wire wire diameter: 0.25mm, diamond wire diamond particle diameter: 30-40 μ m.
The discarded crystal bar of the diamond wire that will not put the first edge on a knife or a pair of scissors cutting puts the first edge on a knife or a pair of scissors.
Machined parameters: tension force: 35N, linear velocity: 12m/s, workpiece feeding: 0.25mm/min, cutting liquid flow: 350ml/s, cutting liquid temperature: 25 ℃, workpiece swing angle: 5 °, workpiece wobble frequency: 28cir/min.
The sapphire wafer obtaining according to the sapphire diamond wire cutting technique of the present embodiment, first-time qualification rate is 97%, and flatness is 10 μ m, and warpage is 10 μ m, and thickness dimensional tolerance is 12 μ m.
The invention has the beneficial effects as follows: can prepare large-size sapphire touch panel blank product, this technique shortens the process time of sapphire slices, improves the quality of production, reduces production costs.
Embodiment 2
As different from Example 1, the machined parameters of the present embodiment:
Tension force: 35N, linear velocity: 9.6m/s, workpiece feeding: 0.2mm/min, cutting liquid flow: 350ml/s, cutting liquid temperature: 35 ℃, workpiece swing angle: 2 °, workpiece wobble frequency: 15cir/min.
Embodiment 3
As different from Example 1, the machined parameters of the present embodiment:
Tension force: 35N, linear velocity: 12m/s, workpiece feeding: 0.25mm/min, cutting liquid flow: 350ml/s, cutting liquid temperature: 35 ℃, workpiece swing angle: 10 °, workpiece wobble frequency: 40cir/min.
Embodiment 4
As different from Example 1, the machined parameters of the present embodiment:
Tension force: 35N, linear velocity: 9.6m/s, workpiece feeding: 0.2mm/min, cutting liquid flow: 350ml/s, cutting liquid temperature: 45 ℃, workpiece swing angle: 5 °, workpiece wobble frequency: 28cir/min.
Embodiment 5
As different from Example 1, in the present embodiment diamond wire, adamantine particle diameter is 50 μ m, and in cutting liquid, adamantine particle diameter is 30-40 μ m.The diamond wire of greater particle size coordinates with the cutting liquid compared with small particle diameter, can improve the surface smoothness of sapphire crystal block, can cut out the sapphire wafer lower than 2mm thickness.
Embodiment 6
As different from Example 1, cutting liquid constituent content is as follows by weight: deionized water 100, and particle diameter is 20 μ m diamond particles 2, particle diameter is the corundum in granules 1 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 10.
Embodiment 7
As different from Example 1, described cutting liquid constituent content is as follows by weight: deionized water 150, and particle diameter is 20 μ m diamond particles 6, particle diameter is the corundum in granules 5 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 20.
Embodiment 8
As different from Example 1, described cutting liquid constituent content is as follows by weight: deionized water 200, and particle diameter is 20 μ m diamond particles 8, particle diameter is the corundum in granules 8 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 40.
Embodiment 9
As different from Example 1, described cutting liquid constituent content is as follows by weight: deionized water 120, and particle diameter is 20 μ m diamond particles 4, particle diameter is the corundum in granules 4 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 15.
Embodiment 10
As different from Example 1, described cutting liquid constituent content is as follows by weight: deionized water 180, and particle diameter is 20 μ m diamond particles 7, particle diameter is the corundum in granules 7 of 50 μ m, the polyethylene glycol 32 that molecular weight is 200, borate 40.
Claims (10)
1. a sapphire wafer diamond wire dicing method, is characterized in that described dicing method comprises the following steps:
Sapphire crystal block be take to C axle or M shaft centre line and as bottom surface, stick at surface of the work, tangent plane is A face;
With diamond wire cutting sapphire crystal block, obtain sapphire wafer, wherein diamond wire wire diameter is 0.25mm, and diamond particle diameter is 30-40 μ m; Line tension is 35N, and linear velocity is 12m/s, and feed-speed is 0.25mm/min, and cutting liquid flow is 350ml/s.
2. sapphire wafer diamond wire dicing method according to claim 1, is characterized in that described cutting liquid temperature is 25 ℃ ± 2 ℃.
3. sapphire wafer diamond wire dicing method according to claim 1, is characterized in that described workpiece swing angle is 2-10 °, and workpiece wobble frequency is 15-40cir/min.
4. sapphire wafer diamond wire dicing method according to claim 3, is characterized in that described workpiece swing angle is 5 °, and workpiece wobble frequency is 28cir/min.
5. sapphire wafer diamond wire dicing method according to claim 1, the discarded crystal bar of diamond wire cutting that it is characterized in that first not putting the first edge on a knife or a pair of scissors before described diamond wire cutting sapphire crystal block puts the first edge on a knife or a pair of scissors.
6. sapphire wafer diamond wire dicing method according to claim 1, described in it is characterized in that, wherein diamond wire wire diameter is 0.25mm, diamond particle diameter is 30-40 μ m, and in cutting liquid, containing particle diameter is that 20 μ m diamond particles and particle diameter are the corundum in granules of 50 μ m.
7. sapphire wafer diamond wire dicing method according to claim 1, it is characterized in that described cutting liquid constituent content is as follows by weight: deionized water 100-200, particle diameter is 20 μ m diamond particles 2-8, particle diameter is the corundum in granules 1-8 of 50 μ m, molecular weight is 200 polyethylene glycol 32, borate 10-40.
8. sapphire wafer diamond wire dicing method according to claim 7, it is characterized in that described cutting liquid constituent content is as follows by weight: deionized water 100-200, particle diameter is 20 μ m diamond particles 8, particle diameter is the corundum in granules 8 of 50 μ m, molecular weight is 200 polyethylene glycol 32, borate 40.
9. sapphire wafer diamond wire dicing method according to claim 1, it is characterized in that described cutting liquid constituent content is as follows by weight: deionized water 100-200, particle diameter is 20 μ m diamond particles 2, particle diameter is the corundum in granules 1 of 50 μ m, molecular weight is 200 polyethylene glycol 32, borate 10.
10. sapphire wafer diamond wire dicing method according to claim 1, it is characterized in that described cutting liquid constituent content is as follows by weight: deionized water 100-200, particle diameter is 20 μ m diamond particles 6, particle diameter is the corundum in granules 7 of 50 μ m, molecular weight is 200 polyethylene glycol 32, borate 30.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310605397.2A CN103640097A (en) | 2013-11-26 | 2013-11-26 | Diamond-wire slicing method for sapphire sheets |
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| CN201310605397.2A CN103640097A (en) | 2013-11-26 | 2013-11-26 | Diamond-wire slicing method for sapphire sheets |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105160286A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method of sapphire fingerprint identification panel |
| CN105154968A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method for sapphire LED filament substrate |
| CN105183206A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Production method of sapphire fingerprint identification panel |
| CN105183207A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Manufacturing method of sapphire borderless touch screen panel |
| CN105382951A (en) * | 2015-12-16 | 2016-03-09 | 哈尔滨秋冠光电科技有限公司 | Sapphire curved surface multi-line cutting method and device thereof |
| CN105818284A (en) * | 2016-04-08 | 2016-08-03 | 山东大学 | Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time |
| CN110722691A (en) * | 2019-10-07 | 2020-01-24 | 江苏澳洋顺昌集成电路股份有限公司 | Processing method for multi-wire cutting uniform surface shape |
| CN111979033A (en) * | 2020-08-31 | 2020-11-24 | 中科孚迪科技发展有限公司 | Diamond wire cutting liquid for sapphire cutting |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004262179A (en) * | 2003-03-04 | 2004-09-24 | Sumitomo Electric Ind Ltd | Wire saw cutting method and equipment therefor |
| JP2007237627A (en) * | 2006-03-10 | 2007-09-20 | Allied Material Corp | Cutting method of single crystal sapphire substrate and cutting device therefor |
| CN201283606Y (en) * | 2008-08-11 | 2009-08-05 | 魏莲君 | Superfine diamond cutting wire |
| CN102049820A (en) * | 2010-12-15 | 2011-05-11 | 湖南宇晶机器实业有限公司 | Working platform of multi-wire cutting machine |
| CN102632555A (en) * | 2012-02-07 | 2012-08-15 | 徐州协鑫光电科技有限公司 | Cutting method of crystal blank |
| CN102717446A (en) * | 2012-07-13 | 2012-10-10 | 上海日进机床有限公司 | Four-roller sapphire slicing machine |
| CN102873771A (en) * | 2012-09-27 | 2013-01-16 | 铜陵市琨鹏光电科技有限公司 | Method for cutting sapphire by cutting wire |
| CN103085177A (en) * | 2011-11-04 | 2013-05-08 | 上海日进机床有限公司 | Slicing machine for cutting sapphire silicon rods |
| CN103121245A (en) * | 2011-11-17 | 2013-05-29 | 赵钧永 | Consolidation grinding material wire-electrode cutting method and cutting fluid |
| CN103184093A (en) * | 2011-12-29 | 2013-07-03 | 辽宁奥克化学股份有限公司 | Cutting liquid used for sapphire cutting by diamond wire |
-
2013
- 2013-11-26 CN CN201310605397.2A patent/CN103640097A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004262179A (en) * | 2003-03-04 | 2004-09-24 | Sumitomo Electric Ind Ltd | Wire saw cutting method and equipment therefor |
| JP2007237627A (en) * | 2006-03-10 | 2007-09-20 | Allied Material Corp | Cutting method of single crystal sapphire substrate and cutting device therefor |
| CN201283606Y (en) * | 2008-08-11 | 2009-08-05 | 魏莲君 | Superfine diamond cutting wire |
| CN102049820A (en) * | 2010-12-15 | 2011-05-11 | 湖南宇晶机器实业有限公司 | Working platform of multi-wire cutting machine |
| CN103085177A (en) * | 2011-11-04 | 2013-05-08 | 上海日进机床有限公司 | Slicing machine for cutting sapphire silicon rods |
| CN103121245A (en) * | 2011-11-17 | 2013-05-29 | 赵钧永 | Consolidation grinding material wire-electrode cutting method and cutting fluid |
| CN103184093A (en) * | 2011-12-29 | 2013-07-03 | 辽宁奥克化学股份有限公司 | Cutting liquid used for sapphire cutting by diamond wire |
| CN102632555A (en) * | 2012-02-07 | 2012-08-15 | 徐州协鑫光电科技有限公司 | Cutting method of crystal blank |
| CN102717446A (en) * | 2012-07-13 | 2012-10-10 | 上海日进机床有限公司 | Four-roller sapphire slicing machine |
| CN102873771A (en) * | 2012-09-27 | 2013-01-16 | 铜陵市琨鹏光电科技有限公司 | Method for cutting sapphire by cutting wire |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105160286A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method of sapphire fingerprint identification panel |
| CN105154968A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method for sapphire LED filament substrate |
| CN105183206A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Production method of sapphire fingerprint identification panel |
| CN105183207A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Manufacturing method of sapphire borderless touch screen panel |
| CN105382951A (en) * | 2015-12-16 | 2016-03-09 | 哈尔滨秋冠光电科技有限公司 | Sapphire curved surface multi-line cutting method and device thereof |
| CN105818284A (en) * | 2016-04-08 | 2016-08-03 | 山东大学 | Method for cutting SiC monocrystal with size being six inches or larger through diamond wire and diamond mortar at same time |
| CN110722691A (en) * | 2019-10-07 | 2020-01-24 | 江苏澳洋顺昌集成电路股份有限公司 | Processing method for multi-wire cutting uniform surface shape |
| CN111979033A (en) * | 2020-08-31 | 2020-11-24 | 中科孚迪科技发展有限公司 | Diamond wire cutting liquid for sapphire cutting |
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Application publication date: 20140319 |