CN111969093A - 一种led芯片的封装方法 - Google Patents
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Abstract
本发明提出一种LED芯片的封装方法,包括以下步骤:S1提供排布在载体上的LED芯片的矩阵阵列,相邻的LED芯片之间具有第一间隙;S2在LED芯片的矩阵阵列上涂覆荧光胶,使荧光胶填充第一间隙,以及覆盖LED芯片的顶面;S3烘干固化所述荧光胶得到荧光膜层;S4切割LED芯片的矩阵阵列,使LED芯片之间产生第二间隙;S5在LED芯片的矩阵阵列上涂覆色剂胶,使色剂胶覆盖所述荧光膜层以及填充第二间隙;S6烘干固化所述色剂胶得到色剂膜层;S7切割LED芯片的矩阵阵列,得到LED芯片封装件。本发明可应用于彩色LED芯片的制备,以提高不同颜色的LED芯片出光的光效。
Description
技术领域
本发明涉及一种LED芯片的封装方法。
背景技术
在LED灯的制作过程中,需要对LED芯片进行封装。LED二极管的光线激发封装胶层内的荧光粉发出的光为白光,要使LED芯片发出其他颜色的光需在封装胶的制备过程中,将荧光粉、色剂和胶水混合调配出合适的颜色,再涂覆在LED芯片上烘干固化。该种方式,混合或固化过程容易出现荧光粉和色剂分布不均的情况,导致最终出光效果差,且色剂与荧光粉混合后的出光颜色与色剂本身的颜色比会出现偏差,调配修正过程繁杂,影响生产效率。
发明内容
为克服现有技术的不足,本发明提出一种LED芯片的封装方法,应用于彩色LED芯片的制备,以提高不同颜色的LED芯片出光的光效。
本发明提出一种LED芯片的封装方法,包括以下步骤:
S1、提供载体,以及排布在所述载体上的LED芯片的矩阵阵列,相邻的所述LED芯片之间具有第一间隙;
S2、在LED芯片的矩阵阵列上涂覆荧光胶,使荧光胶填充所述第一间隙,以及覆盖LED芯片的顶面;
S3、烘干固化所述荧光胶得到荧光膜层;
S4、切割所述LED芯片的矩阵阵列,使LED芯片之间产生第二间隙,切割后LED芯片的四侧以及顶侧包覆所述荧光膜层;
S5、在LED芯片的矩阵阵列上涂覆色剂胶,使色剂胶覆盖所述荧光膜层以及填充所述第二间隙;
S6、烘干固化所述色剂胶得到色剂膜层;
S7、切割所述LED芯片的矩阵阵列,得到LED芯片封装件。
作为本发明的进一步方案,所述烘干固化操作在加热模具内进行,所述加热模具包括上加热模和下加热模;所述载体置于下加热模具内,烘干固化时,所述上加热模具的底面压在LED芯片的矩阵阵列上。
作为本发明的进一步方案,步骤S3和S6的烘干固化条件为:上加热模的温度为145-155℃;下加热膜的温度为95-120℃。
作为本发明的进一步方案,所述荧光胶的制备方法包括以下步骤:
称取85~115重量份的AB胶、76~83重量份的荧光粉、0.3~0.8重量份的防沉降粉和1~3重量份的扩散粉,混合搅拌均匀后真空脱泡。
作为本发明的进一步方案,所述防沉降粉包括纳米硅酸铝、超细硅酸钙和气相二氧化硅,所述纳米硅酸铝、超细硅酸钙和气相二氧化硅的质量比为1:2:4。
作为本发明的进一步方案,所述扩散粉为由粒径是1.0μm和2.0μm的两种有机硅扩散剂按1:1的比例混合而成的粉体。
作为本发明的进一步方案,所述色剂胶的制备方法包括以下步骤:
称取85~115重量份的AB胶和10-20重量份的色剂,混合搅拌均匀后真空脱泡。
作为本发明的进一步方案,所述LED芯片为蓝光LED芯片,所述荧光粉为黄色荧光粉。
与现有技术对比,本发明的优异性体现在:
本发明通过蓝光LED发光二极管激发荧光膜层的荧光粉产生白光,再通过白光透过色剂膜层产生与色剂对应的颜色的光,该种封装方式荧光粉不受色剂影响,有助于提高光效,出光颜色均匀,且色剂单独与胶水配合,不受荧光粉的干扰,容易调配各种颜色色剂膜层以满足不同颜色的出光要求。
本发明的荧光胶包括有0.3~0.8重量份的防沉降粉,所述防沉降粉包括纳米硅酸铝、超细硅酸钙和气相二氧化硅,所述纳米硅酸铝、超细硅酸钙和气相二氧化硅的质量比为1:2:4。对各种防沉降剂进行粗细级配搭配,并将各个组分的加入比例调整到最佳,能达到稳定的防沉降效果,可提高荧光粉的用量,提升光效。且可应用到LED芯片的竖直向发光面涂覆,防止固化过程荧光粉下沉,发光时LED芯片下边沿出现黄边,导致透出的有色光上下颜色不一致。
本发明的荧光胶包括有扩散粉:1-3重量份,所述扩散粉为由粒径是1.0μm和2.0μm的两种有机硅扩散剂按1:1的比例混合而成的粉体。该扩散粉与上述防沉降粉共同使用,有助于进一步提高防沉降性能和出光均匀性,此外,还具有提高光效的效果。
附图说明
图1为本发明的LED芯片的封装方法的步骤流程示意图。
具体实施方式
如下结合附图,对本申请方案作进一步描述:
一种LED芯片的封装方法,包括以下步骤:
S1、如图1中的(a)图所示,提供载体1,以及排布在所述载体1上的LED芯片2的矩阵阵列,相邻的所述LED芯片2之间具有第一间隙;所述LED芯片为蓝光LED芯片。
S2、如图1中的(b)图所示,在LED芯片2的矩阵阵列上涂覆荧光胶,使荧光胶填充所述第一间隙21,以及覆盖LED芯片2的顶面;
S3、烘干固化所述荧光胶得到荧光膜层3;
S4、如图1中的(c)图所示,切割所述LED芯片2的矩阵阵列,使LED芯片2之间产生第二间隙31,切割后LED芯片2的四侧以及顶侧包覆所述荧光膜层3;
S5、如图1中的(d)图所示,在LED芯片2的矩阵阵列上涂覆色剂胶,使色剂胶覆盖所述荧光膜层3以及填充所述第二间隙31;
S6、烘干固化所述色剂胶得到色剂膜层4;
S7、如图1中的(e)图所示,切割所述LED芯片2的矩阵阵列,得到LED芯片封装件。
所述烘干固化操作在加热模具内进行,所述加热模具包括上加热模和下加热模;所述载体1置于下加热模具内,烘干固化时,所述上加热模具的底面压在LED芯片2的矩阵阵列上。上加热模具的底面贴覆有热解膜。步骤S3和S6的烘干固化条件为:上加热模的温度为145-155℃;下加热膜的温度为95-120℃。
所述荧光胶的制备方法包括以下步骤:称取85~115重量份的AB胶、76~83重量份的荧光粉、0.3~0.8重量份的防沉降粉和1~3重量份的扩散粉,混合搅拌均匀后真空脱泡。所述防沉降粉包括纳米硅酸铝、超细硅酸钙和气相二氧化硅,所述纳米硅酸铝、超细硅酸钙和气相二氧化硅的质量比为1:2:4。所述扩散粉为由粒径是1.0μm和2.0μm的两种有机硅扩散剂按1:1的比例混合而成的粉体。所述AB胶由A胶和B胶组成;相对于所述AB胶质量百分数为100wt%,所述A胶由16.63wt%的乙烯基封端甲基苯基聚硅氧烷和0.04wt%的铂二乙烯基四甲基二硅氧烷溶液组成,所述B胶由63.5wt%的苯基硅树脂、19.77wt%的苯基含氢聚硅氧烷和0.06wt%的乙炔基环己醇组成。
所述色剂胶的制备方法包括以下步骤:称取85~115重量份的AB胶和10-20重量份的色剂,混合搅拌均匀后真空脱泡。
按上述封装方法与下表1实施例1-3的组分配比进行实施;按表2对比例1的组分配比制得荧光胶,将该荧光胶直接涂覆在LED芯片四侧面和顶面后烘干固化。将实施例1-3制得的LED芯片封装件与对比例1制得的LED芯片封装件进行性能对比测试,结果如表3所示。
表1
表2
对比例1荧光胶组分 | 重量份 |
AB胶 | 100 |
荧光粉 | 80 |
色剂 | 10 |
二氧化硅 | 0.7 |
扩散粉 | 2 |
表3
由表3测试结果可知,实施例1-3通过蓝光LED发光二极管激发荧光膜层的荧光粉产生白光,再通过白光透过色剂膜层产生与色剂对应的颜色的光,出光颜色均匀,颜色一致性Y轴与X轴的偏差在0.01以内,且光效高。而对比例1采用现有技术封装的LED芯片光,出光颜色不均,Y轴与X轴的偏差超过0.03。
上述优选实施方式应视为本申请方案实施方式的举例说明,凡与本申请方案雷同、近似或以此为基础作出的技术推演、替换、改进等,均应视为本专利的保护范围。
Claims (8)
1.一种LED芯片的封装方法,其特征在于,包括以下步骤:
S1、提供载体,以及排布在所述载体上的LED芯片的矩阵阵列,相邻的所述LED芯片之间具有第一间隙;
S2、在LED芯片的矩阵阵列上涂覆荧光胶,使荧光胶填充所述第一间隙,以及覆盖LED芯片的顶面;
S3、烘干固化所述荧光胶得到荧光膜层;
S4、切割所述LED芯片的矩阵阵列,使LED芯片之间产生第二间隙,切割后LED芯片的四侧以及顶侧包覆所述荧光膜层;
S5、在LED芯片的矩阵阵列上涂覆色剂胶,使色剂胶覆盖所述荧光膜层以及填充所述第二间隙;
S6、烘干固化所述色剂胶得到色剂膜层;
S7、切割所述LED芯片的矩阵阵列,得到LED芯片封装件。
2.根据权利要求1所述的LED芯片的封装方法,其特征在于,所述烘干固化操作在加热模具内进行,所述加热模具包括上加热模和下加热模;所述载体置于下加热模具内,烘干固化时,所述上加热模具的底面压在LED芯片的矩阵阵列上。
3.根据权利要求2所述的LED芯片的封装方法,其特征在于,步骤S3和S6的烘干固化条件为:上加热模的温度为135-150℃;下加热膜的温度为95-120℃。
4.根据权利要求1所述的LED芯片的封装方法,其特征在于,所述荧光胶的制备方法包括以下步骤:
称取85~115重量份的AB胶、76~83重量份的荧光粉、0.3~0.8重量份的防沉降粉和1~3重量份的扩散粉,混合搅拌均匀后真空脱泡。
5.根据权利要求4所述的LED芯片的封装方法,其特征在于,所述防沉降粉包括纳米硅酸铝、超细硅酸钙和气相二氧化硅,所述纳米硅酸铝、超细硅酸钙和气相二氧化硅的质量比为1:2:4。
6.根据权利要求4所述的LED芯片的封装方法,其特征在于,所述扩散粉为由粒径是1.0μm和2.0μm的两种有机硅扩散剂按1:1的比例混合而成的粉体。
7.根据权利要求1所述的LED芯片的封装方法,其特征在于,所述色剂胶的制备方法包括以下步骤:
称取85~115重量份的AB胶和10-20重量份的色剂,混合搅拌均匀后真空脱泡。
8.根据权利要求1-7任一项所述的LED芯片的封装方法,其特征在于,所述LED芯片为蓝光LED芯片,所述荧光粉为黄色荧光粉。
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