CN111965404B - Phase delay acquisition device and method of oscilloscope - Google Patents
Phase delay acquisition device and method of oscilloscope Download PDFInfo
- Publication number
- CN111965404B CN111965404B CN202011149753.0A CN202011149753A CN111965404B CN 111965404 B CN111965404 B CN 111965404B CN 202011149753 A CN202011149753 A CN 202011149753A CN 111965404 B CN111965404 B CN 111965404B
- Authority
- CN
- China
- Prior art keywords
- voltage
- igbt
- current
- signal
- oscilloscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R13/00—Arrangements for displaying electric variables or waveforms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The application discloses a phase delay acquisition device and an acquisition method of an oscilloscope, the device comprises a power supply, a first IGBT, a second IGBT, a first inductor and a second inductor, in the test process, the control end of the second IGBT receives at least two pulse signals with a preset time interval, the control end of the first IGBT is suspended, when the second IGBT is turned on for the second time under the control of the control signal, the current flowing through the second IGBT starts to increase, while the body diode of the first IGBT is in a freewheeling state, because of the existence of the first inductor, a gap appears on the voltage signal measured by the oscilloscope, the phase delay of the voltage signal and the current signal measured by the oscilloscope can be calculated and obtained according to the gap, the purpose of obtaining the phase delay of the oscilloscope is realized, the whole device is realized by using the existing power unit, the cost is low, and the phase delay generated by selecting different oscilloscope channels can be compensated.
Description
Technical Field
The application relates to the technical field of instruments and meters, in particular to a phase delay acquisition device and method of an oscilloscope.
Background
An Oscilloscope (Oscilloscope) is an electronic measuring instrument with wide application, can convert an electric signal invisible to the naked eye into a visible image, and is convenient for people to research the change process of various electric phenomena.
In the process of utilizing an oscilloscope to evaluate the junction temperature of a power unit consisting of an Insulated Gate Bipolar Transistor (IGBT)/silicon carbide (SiC) semiconductor module, a driver, a thin film capacitor and a busbar, on-loss and off-loss parameters are calculated through double-pulse tests under multiple working conditions, and a thermal simulation model is extracted through a thermal simulation tool to obtain the junction temperature evaluation method. The turn-on loss and turn-off loss parameters are the integral of the current and voltage over a certain period of time. When the current waveform and the voltage waveform measured by the oscilloscope have phase difference, the obtained value has larger deviation with the true value, so that the junction temperature estimation is not true.
Disclosure of Invention
In order to solve the technical problem, the application provides a phase delay acquisition device and an acquisition method of an oscilloscope, so as to solve the problem that the error of a junction temperature evaluation result is large due to the phase delay of the oscilloscope.
In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:
an apparatus for acquiring a phase delay of an oscilloscope, comprising: the power supply, the first IGBT, the second IGBT, the first inductor and the second inductor; wherein the content of the first and second substances,
the power supply, the first inductor, the first IGBT and the second IGBT are connected in series;
two ends of the second inductor are respectively connected with the first end and the second end of the first IGBT;
the control end of the second IGBT is used for receiving a control signal, and the control signal comprises at least two pulse signals separated by preset time; the control end of the first IGBT is suspended;
the first end and the second end of the second IGBT are used for an oscilloscope to measure voltage signals, the second end of the second IGBT is used for the oscilloscope to measure current signals, and the voltage signals and the current signals obtained through measurement are used for calculating phase delays of the voltage signals and the current signals.
A phase delay obtaining method of an oscilloscope is realized based on any one of the phase delay obtaining devices of the oscilloscope, and the phase delay obtaining device of the oscilloscope comprises the following steps: the phase delay acquiring method of the oscilloscope comprises the following steps:
providing a control signal for a control end of the second IGBT, wherein the control signal comprises at least two pulse signals separated by preset time;
measuring a current signal of a second end of the second IGBT by using a current probe of an oscilloscope;
measuring voltage signals at two ends of the second IGBT by using a differential probe of an oscilloscope;
and calculating the phase delay of the voltage signal and the current signal according to the voltage signal and the current signal obtained by measurement.
Optionally, the calculating the phase delay of the voltage signal and the current signal according to the voltage signal and the current signal obtained by measurement includes:
intercepting a voltage signal and a current signal within a preset time period after the starting moment of a second pulse signal in the control signal to obtain a voltage waveform to be processed and a current waveform to be processed;
discretizing the current waveform to be processed, wherein the discretized current waveform to be processed comprises a plurality of discrete points;
obtaining a plurality of voltage drop process curves according to the first inductor and the discretized current waveform to be processed;
fitting the voltage drop process curve to obtain a voltage fitting curve;
determining a voltage fitting curve which is most similar to the voltage waveform to be processed from a plurality of voltage fitting curves;
and determining stray inductance and phase difference time according to the determined voltage fitting curve, wherein the phase difference time is the phase delay of the voltage signal and the current signal.
Optionally, the obtaining a plurality of voltage drop process curves according to the first inductor and the discretized current waveform to be processed includes:
dividing the first inductor into a plurality of inductor values within a preset inductor range according to a preset inductor step length;
according to the adjacent discrete points, determining the time interval and the current value interval of the adjacent discrete points;
and calculating to obtain the multiple voltage reduction process curves according to the multiple inductance values, the time intervals and the current value intervals of the adjacent discrete points.
Optionally, the obtaining, by calculation, the multiple voltage drop process curves according to the multiple inductance values and the time intervals and the current value intervals between adjacent discrete points includes:
substituting the plurality of inductance values, the time intervals and the current value intervals of the adjacent discrete points into a first preset formula to calculate and obtain a plurality of voltage reduction process curves;
the first preset formula includes:
(ii) a Wherein Vt represents the voltage drop process curve, Dt represents a time interval adjacent to the discrete point, Di represents a current value interval adjacent to the discrete point, and Ls represents the inductance value.
Optionally, the value of the preset inductance step length is one thousandth of the total length of the preset inductance range.
Optionally, the determining a voltage fitting curve that is closest to the voltage waveform to be processed from the plurality of voltage fitting curves includes:
determining the slope of each of the voltage fit curves;
and determining the voltage fitting curve with the smallest difference between the slope of the plurality of voltage fitting curves and the slope of the voltage waveform to be processed as the voltage fitting curve which is closest to the voltage waveform to be processed.
Optionally, the intercepting a voltage signal and a current signal within a preset time period after a start time of a second pulse signal in the control signal to obtain a to-be-processed voltage waveform and a to-be-processed current waveform includes:
and intercepting a voltage signal and a current signal in a preset time period after the start time of the second pulse signal in the control signal, and performing recursive mean filtering on the intercepted current signal and voltage signal to obtain a to-be-processed voltage waveform and a to-be-processed current waveform.
Optionally, the value range of the preset time includes 10 ± 5 μ s.
It can be seen from the above technical solutions that the present application provides a phase delay obtaining apparatus and a phase delay obtaining method for an oscilloscope, where the phase delay obtaining apparatus for an oscilloscope includes a power supply, a first IGBT, a second IGBT, a first inductor, and a second inductor, in a test process, a control terminal of the second IGBT receives at least two pulse signals with a preset interval, a control terminal of the first IGBT is suspended, when the second IGBT is turned on for the second time under the control of the control signal, a current flowing through the second IGBT starts to increase, but does not reach a rated current of a first terminal of the second IGBT, a body diode of the first IGBT is in a freewheeling state at this time, due to the existence of the first inductor, a gap may occur in a voltage signal measured by the oscilloscope, and a phase delay of the voltage signal and a phase delay of a current signal measured by the oscilloscope may be calculated according to the gap, the purpose of obtaining the phase delay of the oscilloscope is achieved, the whole device is achieved by utilizing the existing power unit, the cost is low, and the phase delay generated by selecting different oscilloscope channels can be compensated.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a block diagram of a first prior art scheme for measuring phase delay of an oscilloscope;
FIG. 2 is a graph illustrating measurement results of the frame shown in FIG. 1;
FIG. 3 is a block diagram of a second prior art scheme for measuring the phase delay of an oscilloscope;
FIG. 4 is a graph illustrating measurement results of the frame shown in FIG. 3;
fig. 5 is a schematic structural diagram of a phase delay acquiring apparatus of an oscilloscope according to an embodiment of the present application;
FIG. 6 is a waveform diagram of a control signal according to an embodiment of the present application;
FIG. 7 is a schematic diagram of waveforms of a control signal, a voltage signal, and a current signal according to an embodiment of the present application;
fig. 8 is an enlarged schematic view of the dashed box in fig. 7.
Detailed Description
As described in the background art, in the process of evaluating the junction temperature of the power unit, a phase difference may exist between a current waveform and a voltage waveform measured by an oscilloscope, so that a large deviation exists between a current value and a voltage value obtained and a real value, and the junction temperature estimation is not real.
To solve this problem, researchers in the related art have provided the following two solutions:
the first scheme is as follows:
referring to fig. 1 and 2, a square wave pulse passes through a 50 Ω resistor to GND by the input signal PWM _ IN 5V. The current probe of the oscilloscope is sleeved in the 5T ring to measure current, and the voltage probe of the oscilloscope is respectively clamped in the test points 1,2 and 3 and is used for measuring voltage with GND. The phase delays of the current and voltage square waves were then compared by an oscilloscope (see fig. 2, in fig. 2, V)PWM_INRepresenting the input signal waveform, H represents a high level, L represents a low level, V represents the oscilloscope-measured voltage waveform, and I represents the oscilloscope-measured current waveform).
However, because the current generated in the loop has a value of 100mA, the wide-range current probe cannot adopt the scheme to carry out phase difference correction.
Scheme II:
referring to fig. 3 and 4, fig. 3 (in fig. 3, V)DSRepresenting the voltage probe of an oscilloscope IDShowing a current probe of an oscilloscope) is a structural block diagram of a scheme 2, a signal PWM _ IN 15V square wave pulse is input, when the square wave pulse is at a high level, an MOS tube is conducted, and current is generated IN a loop, wherein the current probe is sleeved below a non-inductive resistance loop to measure the current flowing through the MOS tube, and a voltage probe is clamped between a drain electrode and a source electrode of the MOS tube to measure the voltage at two ends of the MOS tube. The phase delays of the current square wave and the voltage square wave were then compared by an oscilloscope (see fig. 4, in fig. 4, V)PWM_INRepresenting the waveform of an input signal, H representing high level, L representing low level, V representing the waveform of a voltage measured by an oscilloscope, and I representing the waveform of a current measured by the oscilloscope).
In view of this, an embodiment of the present application provides a phase delay acquiring apparatus for an oscilloscope, including: the power supply, the first IGBT, the second IGBT, the first inductor and the second inductor; wherein the content of the first and second substances,
the power supply, the first inductor, the first IGBT and the second IGBT are connected in series;
two ends of the second inductor are respectively connected with the first end and the second end of the first IGBT;
the control end of the second IGBT is used for receiving a control signal, and the control signal comprises at least two pulse signals separated by preset time; the control end of the first IGBT is suspended;
the first end and the second end of the second IGBT are used for an oscilloscope to measure voltage signals, the second end of the second IGBT is used for the oscilloscope to measure current signals, and the voltage signals and the current signals obtained through measurement are used for calculating phase delays of the voltage signals and the current signals.
The phase delay acquisition device of the oscilloscope comprises a power supply, a first IGBT, a second IGBT, a first inductor and a second inductor, in the test process, the control end of the second IGBT receives at least two pulse signals with preset time intervals, the control end of the first IGBT is suspended, when the second IGBT is turned on for the second time under the control of the control signal, the current flowing through the second IGBT starts to increase, but not reach the rated current of the first end of the second IGBT, at the moment, the body diode of the first IGBT is in a free-wheeling state, because of the existence of the first inductor, a gap appears on the voltage signal measured by the oscilloscope, the phase delay of the voltage signal and the current signal measured by the oscilloscope can be calculated and obtained according to the gap, the purpose of obtaining the phase delay of the oscilloscope is realized, the whole device is realized by using the existing power unit, the cost is low, and the phase delay generated by selecting different oscilloscope channels can be compensated.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the present application provides a phase delay obtaining apparatus of an oscilloscope, as shown in fig. 5, including: the power supply, the first IGBT, the second IGBT, the first inductor and the second inductor; wherein the content of the first and second substances,
the power supply, the first inductor, the first IGBT and the second IGBT are connected in series;
two ends of the second inductor are respectively connected with the first end and the second end of the first IGBT;
the control end of the second IGBT is used for receiving a control signal, and the control signal comprises at least two pulse signals separated by preset time; the control end of the first IGBT is suspended;
the first end and the second end of the second IGBT are used for an oscilloscope to measure voltage signals, the second end of the second IGBT is used for the oscilloscope to measure current signals, and the voltage signals and the current signals obtained through measurement are used for calculating phase delays of the voltage signals and the current signals.
Referring to fig. 6, fig. 6 is a timing diagram of the control signal, and in the test process, a second pulse signal of the control signal is mainly used, so that only two pulse signals are generally needed for one control period of the control signal, a feasible value of an interval time of the two pulse signals may be about 10 μ s, and in an embodiment of the present application, a value range of the preset time includes 10 ± 5 μ s.
Still referring to fig. 5, when the control signal is high, the second IGBT is turned on, and there are two loop currents in the entire loop, one being the loop current from the power supply through the first inductor, the second inductor, and the second IGBT (I1), and the other being the loop current from the second inductor through the body diode of the first IGBT (I2). In fig. 5, D1 denotes the body diode of the first IGBT, D2 denotes the body diode of the second IGBT, VCEIndicating oscilloscopeMeasure a voltage signal between the first and second terminals of the second IGBT, ICThe current probe representing the oscilloscope measures the current signal flowing through the second IGBT, T1 represents the first IGBT, T2 represents the second IGBT, L2 represents the second IGBTsRepresents the first inductance, LairRepresenting the second inductance.
The control terminals of the first IGBT and the second IGBT may refer to bases of the first IGBT and the second IGBT, and the first terminal and the second terminal of the first IGBT and the second IGBT refer to collectors and emitters of the first IGBT and the second IGBT, respectively.
The amplitude of the high level of the control signal is set in advance according to a set value.
The control end of the first IGBT is suspended, that is, the control end of the first IGBT does not apply any signal and keeps the first IGBT turned off. During the turn-on process of the second IGBT, the current flowing through the second IGBT starts to increase, but does not reach the rated current of the collector of the second IGBT, at which time the body diode of the first IGBT is in a freewheeling state, and the voltage of the collector and emitter of the first IGBT is zero. Due to the presence of the stray inductance of the commutation loop, i.e. the first inductance, the voltage between the collector and the emitter of the second IGBT will exhibit a notch Us as shown in fig. 7 and 8. In FIGS. 7 and 8, VPWM_INA waveform diagram showing the control signal, H denotes a high level, L denotes a low level, VCEA waveform representing the voltage signal ICThe waveforms representing the current signals, the waveforms of the control signals not being shown in fig. 8, and V not clearly shown in fig. 7GE，VGEA voltage waveform representing the control terminal of the second IGBT.
According to the gap Us, the phase delay of the current signal and the voltage signal measured by the oscilloscope can be obtained by utilizing a calculation method.
Specifically, the voltage signal and the current signal within a preset time period after the start time of the second pulse signal (i.e., the rising edge time of the second pulse signal) in the control signal are intercepted, and the intercepted signals are subjected to recursive mean filtering to smooth the waveform, so as to obtain the waveform of the voltage to be processed and the waveform of the current to be processed. The specific value of the preset time period is determined according to the size of the notch Us.
Dividing the first inductor into a plurality of inductor values within a preset inductor range according to a preset inductor step length; according to the adjacent discrete points, determining the time interval and the current value interval of the adjacent discrete points; substituting the plurality of inductance values, the time intervals and the current value intervals of the adjacent discrete points into a first preset formula to calculate and obtain a plurality of voltage reduction process curves;
the first preset formula includes:
(ii) a Wherein Vt represents the voltage drop process curve, Dt represents a time interval adjacent to the discrete point, Di represents a current value interval adjacent to the discrete point, and Ls represents the inductance value.
Optionally, the value of the preset inductance step length is one thousandth of the total length of the preset inductance range. That is, assuming that the preset inductance range is 0nH to 100nH, the total length of the preset inductance range is 100nH, the preset inductance step size is 0.1nH, and the preset inductance step size divides the preset inductance range into 1000 values. Meanwhile, when the current waveform to be processed is discretized, assuming that the phase difference is from-50 ns to 50ns, the discretization step length can also be selected to be 0.1ns, so that 1000 × 1000=1000K voltage drop process curves are obtained in total.
Optionally, the determining a voltage fitting curve that is closest to the voltage waveform to be processed from the plurality of voltage fitting curves includes:
determining the slope of each of the voltage fit curves;
and determining the voltage fitting curve with the smallest difference between the slope of the plurality of voltage fitting curves and the slope of the voltage waveform to be processed as the voltage fitting curve which is closest to the voltage waveform to be processed.
Correspondingly, the embodiment of the application also provides a phase delay acquisition method of the oscilloscope, and the phase delay acquisition method of the oscilloscope described below can be referred to by the phase delay acquisition device of the oscilloscope described above in a corresponding way.
Optionally, the method for obtaining the phase delay of the oscilloscope is implemented based on the device for obtaining the phase delay of the oscilloscope according to any of the embodiments, and the device for obtaining the phase delay of the oscilloscope includes: the phase delay acquiring method of the oscilloscope comprises the following steps:
providing a control signal for a control end of the second IGBT, wherein the control signal comprises at least two pulse signals separated by preset time;
measuring a current signal of a second end of the second IGBT by using a current probe of an oscilloscope;
measuring voltage signals at two ends of the second IGBT by using a differential probe of an oscilloscope;
and calculating the phase delay of the voltage signal and the current signal according to the voltage signal and the current signal obtained by measurement.
Optionally, the calculating the phase delay of the voltage signal and the current signal according to the voltage signal and the current signal obtained by measurement includes:
intercepting a voltage signal and a current signal within a preset time period after the starting moment of a second pulse signal in the control signal to obtain a voltage waveform to be processed and a current waveform to be processed;
discretizing the current waveform to be processed, wherein the discretized current waveform to be processed comprises a plurality of discrete points;
obtaining a plurality of voltage drop process curves according to the first inductor and the discretized current waveform to be processed;
fitting the voltage drop process curve to obtain a voltage fitting curve;
determining a voltage fitting curve which is most similar to the voltage waveform to be processed from a plurality of voltage fitting curves;
and determining stray inductance and phase difference time according to the determined voltage fitting curve, wherein the phase difference time is the phase delay of the voltage signal and the current signal.
Optionally, the obtaining a plurality of voltage drop process curves according to the first inductor and the discretized current waveform to be processed includes:
dividing the first inductor into a plurality of inductor values within a preset inductor range according to a preset inductor step length;
according to the adjacent discrete points, determining the time interval and the current value interval of the adjacent discrete points;
and calculating to obtain the multiple voltage reduction process curves according to the multiple inductance values, the time intervals and the current value intervals of the adjacent discrete points.
Optionally, the obtaining, by calculation, the multiple voltage drop process curves according to the multiple inductance values and the time intervals and the current value intervals between adjacent discrete points includes:
substituting the plurality of inductance values, the time intervals and the current value intervals of the adjacent discrete points into a first preset formula to calculate and obtain a plurality of voltage reduction process curves;
the first preset formula includes:
(ii) a Wherein Vt represents the voltage drop process curve, Dt represents a time interval adjacent to the discrete point, Di represents a current value interval adjacent to the discrete point, and Ls represents the inductance value.
Optionally, the value of the preset inductance step length is one thousandth of the total length of the preset inductance range.
Optionally, the determining a voltage fitting curve that is closest to the voltage waveform to be processed from the plurality of voltage fitting curves includes:
determining the slope of each of the voltage fit curves;
and determining the voltage fitting curve with the smallest difference between the slope of the plurality of voltage fitting curves and the slope of the voltage waveform to be processed as the voltage fitting curve which is closest to the voltage waveform to be processed.
Optionally, the intercepting a voltage signal and a current signal within a preset time period after a start time of a second pulse signal in the control signal to obtain a to-be-processed voltage waveform and a to-be-processed current waveform includes:
and intercepting a voltage signal and a current signal in a preset time period after the start time of the second pulse signal in the control signal, and performing recursive mean filtering on the intercepted current signal and voltage signal to obtain a to-be-processed voltage waveform and a to-be-processed current waveform.
Optionally, the value range of the preset time includes 10 ± 5 μ s.
In summary, the embodiment of the present application provides a phase delay acquiring device and an acquiring method of an oscilloscope, wherein the phase delay acquiring device of the oscilloscope comprises a power supply, a first IGBT, a second IGBT, a first inductor and a second inductor, in a test process, a control end of the second IGBT receives at least two pulse signals with a preset time interval, a control end of the first IGBT is suspended, when the second IGBT is turned on for the second time under the control of the control signal, a current flowing through the second IGBT starts to increase but does not reach a rated current of a first end of the second IGBT, a body diode of the first IGBT is in a freewheeling state at this time, due to existence of the first inductor, a gap may occur in a voltage signal measured by the oscilloscope, and a phase delay of the voltage signal and a phase delay of the current signal measured by the oscilloscope may be calculated according to the gap, so as to achieve a purpose of acquiring the phase delay of the oscilloscope, the whole device is realized by using the existing power unit, the cost is low, and the phase delay generated by selecting different oscilloscope channels can be compensated.
Features described in the embodiments in the present specification may be replaced with or combined with each other, each embodiment is described with a focus on differences from other embodiments, and the same and similar portions among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. The method for acquiring the phase delay of the oscilloscope is characterized by being realized by a phase delay acquiring device based on the oscilloscope, wherein the phase delay acquiring device of the oscilloscope comprises the following steps: the phase delay acquiring method of the oscilloscope comprises the following steps:
providing a control signal for a control end of the second IGBT, wherein the control signal comprises at least two pulse signals separated by preset time;
measuring a current signal of a second end of the second IGBT by using a current probe of an oscilloscope;
measuring voltage signals at two ends of the second IGBT by using a differential probe of an oscilloscope;
calculating the phase delay of the voltage signal and the current signal according to the voltage signal and the current signal obtained by measurement;
the power supply, the first inductor, the first IGBT and the second IGBT are connected in series;
two ends of the second inductor are respectively connected with the first end and the second end of the first IGBT;
the control end of the second IGBT is used for receiving a control signal, and the control signal comprises at least two pulse signals separated by preset time; the control end of the first IGBT is suspended;
the first end and the second end of the second IGBT are used for an oscilloscope to measure voltage signals, the second end of the second IGBT is used for the oscilloscope to measure current signals, and the voltage signals and the current signals obtained through measurement are used for calculating phase delay of the voltage signals and the current signals;
the calculating of the phase delays of the voltage signal and the current signal from the voltage signal and the current signal obtained by measurement includes:
intercepting a voltage signal and a current signal within a preset time period after the starting moment of a second pulse signal in the control signal to obtain a voltage waveform to be processed and a current waveform to be processed;
discretizing the current waveform to be processed, wherein the discretized current waveform to be processed comprises a plurality of discrete points;
obtaining a plurality of voltage drop process curves according to the first inductor and the discretized current waveform to be processed;
fitting the voltage drop process curve to obtain a voltage fitting curve;
determining a voltage fitting curve which is most similar to the voltage waveform to be processed from a plurality of voltage fitting curves;
and determining stray inductance and phase difference time according to the determined voltage fitting curve, wherein the phase difference time is the phase delay of the voltage signal and the current signal.
2. The method for acquiring the phase delay of the oscilloscope according to claim 1, wherein the obtaining a plurality of voltage drop process curves according to the first inductor and the discretized current waveform to be processed comprises:
dividing the first inductor into a plurality of inductor values within a preset inductor range according to a preset inductor step length;
according to the adjacent discrete points, determining the time interval and the current value interval of the adjacent discrete points;
and calculating to obtain the multiple voltage reduction process curves according to the multiple inductance values, the time intervals and the current value intervals of the adjacent discrete points.
3. The method of claim 2, wherein the obtaining the plurality of voltage drop process curves by calculation according to the plurality of inductance values and the time interval and the current value interval between adjacent discrete points comprises:
substituting the plurality of inductance values, the time intervals and the current value intervals of the adjacent discrete points into a first preset formula to calculate and obtain a plurality of voltage reduction process curves;
the first preset formula includes:
(ii) a Wherein Vt represents the voltage drop process curve, Dt represents a time interval adjacent to the discrete point, Di represents a current value interval adjacent to the discrete point, and Ls represents the inductance value.
4. The method for acquiring the phase delay of the oscilloscope according to claim 2, wherein the value of the preset inductance step is one thousandth of the total length of the preset inductance range.
5. The method of claim 1, wherein said determining a voltage fit curve that is closest to the voltage waveform to be processed from the plurality of voltage fit curves comprises:
determining the slope of each of the voltage fit curves;
and determining the voltage fitting curve with the smallest difference between the slope of the plurality of voltage fitting curves and the slope of the voltage waveform to be processed as the voltage fitting curve which is closest to the voltage waveform to be processed.
6. The method for acquiring the phase delay of the oscilloscope according to claim 1, wherein the step of intercepting the voltage signal and the current signal within a preset time period after the start time of the second pulse signal in the control signal to obtain the voltage waveform to be processed and the current waveform to be processed comprises:
and intercepting a voltage signal and a current signal in a preset time period after the start time of the second pulse signal in the control signal, and performing recursive mean filtering on the intercepted current signal and voltage signal to obtain a to-be-processed voltage waveform and a to-be-processed current waveform.
7. The method of claim 1, wherein the predetermined time comprises 10 ± 5 μ s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011149753.0A CN111965404B (en) | 2020-10-23 | 2020-10-23 | Phase delay acquisition device and method of oscilloscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011149753.0A CN111965404B (en) | 2020-10-23 | 2020-10-23 | Phase delay acquisition device and method of oscilloscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111965404A CN111965404A (en) | 2020-11-20 |
| CN111965404B true CN111965404B (en) | 2020-12-29 |
Family
ID=73387145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011149753.0A Active CN111965404B (en) | 2020-10-23 | 2020-10-23 | Phase delay acquisition device and method of oscilloscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111965404B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113589013A (en) * | 2021-08-12 | 2021-11-02 | 深圳市鼎阳科技股份有限公司 | Signal excitation device of oscilloscope probe and oscilloscope calibration system |
| CN115469126B (en) * | 2022-11-14 | 2023-03-10 | 杭州飞仕得科技股份有限公司 | Phase compensation method and device |
| CN115598420B (en) * | 2022-12-16 | 2023-03-10 | 杭州飞仕得科技股份有限公司 | Method, device and equipment for calculating phase delay time and storage medium |
| CN117250386B (en) * | 2023-11-17 | 2024-01-09 | 深圳青铜剑技术有限公司 | Method and device for correcting delay of voltage and current probe of oscilloscope |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747972A (en) * | 1995-01-11 | 1998-05-05 | Microplanet Ltd. | Method and apparatus for electronic power control |
| US20030052658A1 (en) * | 1995-01-11 | 2003-03-20 | Baretich David F. | Method and apparatus for electronic power control |
| CA2785715A1 (en) * | 2009-12-28 | 2011-07-28 | Paul M. Babcock | Controllable universal supply with reactive power management |
| CN102156253B (en) * | 2010-12-31 | 2014-03-26 | 中电普瑞科技有限公司 | Double-pulse test method for IGBT module |
| US9531300B2 (en) * | 2013-09-16 | 2016-12-27 | Enphase Energy, Inc. | Single phase cycloconverter with integrated line-cycle energy storage |
| CN104007344B (en) * | 2014-05-23 | 2016-08-03 | 国电南瑞科技股份有限公司 | A kind of New IGBT parallel connection performance test methods |
| CN204116544U (en) * | 2014-08-29 | 2015-01-21 | 辽宁荣信电气传动技术有限责任公司 | A kind of dipulse proving installation for half-bridge IGBT module |
| US9426005B1 (en) * | 2015-07-09 | 2016-08-23 | Infineon Technologies Ag | Method for indirect measurement of the phase delay of a RF-PWM modulator |
| CN110376539B (en) * | 2019-06-17 | 2021-07-02 | 中国科学院电工研究所 | Measurement delay method and device for calibrating oscilloscope channel and calibration equipment |
-
2020
- 2020-10-23 CN CN202011149753.0A patent/CN111965404B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111965404A (en) | 2020-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111965404B (en) | Phase delay acquisition device and method of oscilloscope | |
| JP5675855B2 (en) | System and method for monitoring the operating state of an IGBT device in real time | |
| Zhang et al. | Online junction temperature monitoring using intelligent gate drive for SiC power devices | |
| Luo et al. | Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules | |
| CN107621599B (en) | Method for measuring junction temperature change of IGBT in high-temperature reverse bias test | |
| CN108508342B (en) | IGBT short circuit overcurrent detection circuit | |
| Baker et al. | Online junction temperature measurement via internal gate resistance during turn-on | |
| JP6251310B2 (en) | Measuring method of current-voltage characteristics | |
| Baker et al. | Online junction temperature measurement using peak gate current | |
| CN109494972B (en) | Dead time setting method based on enhanced gallium nitride device | |
| Gonzalez et al. | Bias temperature instability and condition monitoring in SiC power MOSFETs | |
| Zhang et al. | Online junction temperature monitoring using turn-off delay time for silicon carbide power devices | |
| Niu et al. | Sensing IGBT junction temperature using gate drive output transient properties | |
| Pu et al. | SiC MOSFET aging detection based on miller plateau voltage sensing | |
| JP2017123704A (en) | Power conversion device | |
| CN110376539B (en) | Measurement delay method and device for calibrating oscilloscope channel and calibration equipment | |
| JP6540062B2 (en) | Device and method for evaluating switching energy loss of power semiconductor devices | |
| JP2016220481A (en) | Electric power conversion system | |
| Kestler et al. | Junction temperature measurement of SiC MOSFETs: Straightforward as it seems? | |
| CN212008817U (en) | Active MOSFET voltage clamping circuit and double-pulse test circuit | |
| Nguyen et al. | Effect of short circuit aging on safe operating area of SiC MOSFET | |
| CN116754915A (en) | Working junction temperature monitoring system and method of semiconductor switching device | |
| Endruschat et al. | Application-related characterization and theoretical potential of wide-bandgap devices | |
| Li et al. | A simple transfer capacitance measurement method of SiC MOSFET in high-voltage applications | |
| Frankeser et al. | Using the on-state-Vbe, sat-voltage for temperature estimation of SiC-BJTs during normal operation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 311100 2 / F, building 1, No. 96, longchuanwu Road, Donghu street, Yuhang District, Hangzhou City, Zhejiang Province Patentee after: HANGZHOU FIRSTACK TECHNOLOGY Co.,Ltd. Address before: 7 / F, building 1, canal industrial building, No. 99, Xiangyuan Road, Gongshu District, Hangzhou City, Zhejiang Province Patentee before: HANGZHOU FIRSTACK TECHNOLOGY Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: 311100 Floor 2, Building 1, No. 96, Longchuanwu Road, Donghu Street, Linping District, Hangzhou, Zhejiang Patentee after: Hangzhou Feishide Technology Co.,Ltd. Address before: 311100 2 / F, building 1, No. 96, longchuanwu Road, Donghu street, Yuhang District, Hangzhou City, Zhejiang Province Patentee before: HANGZHOU FIRSTACK TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |