CN111960376A - MEMS supporting and electric connection hole structure and preparation method - Google Patents
MEMS supporting and electric connection hole structure and preparation method Download PDFInfo
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- CN111960376A CN111960376A CN202010706847.7A CN202010706847A CN111960376A CN 111960376 A CN111960376 A CN 111960376A CN 202010706847 A CN202010706847 A CN 202010706847A CN 111960376 A CN111960376 A CN 111960376A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
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Abstract
The invention discloses an MEMS supporting and electric connection hole structure which is in a necking bottle shape, wherein a bottle mouth of the supporting and electric connection hole structure is arranged on a micro-bridge, and the projection area of the bottle mouth is smaller than that of a bottle body, so that the supporting of the micro-bridge and the electric connection between the micro-bridge and a substrate are realized. A method for making the MEMS support and electrical connection hole structure is also disclosed. By means of the support and the electric connection hole structure of the necking bottle shape, the filling factor can be improved on the premise of ensuring effective electric connection, so that the light absorption rate and the integral performance of the MEMS are improved, meanwhile, a bottle opening and a part of bottle bottom are formed to be provided with a metal Ti layer, a bottle body is not provided with the metal Ti layer, but the whole necking bottle shape structure is provided with the support and the electric connection hole structure of a metal electrode layer, and the problem that released gas is corroded to other films through the metal Ti layer to cause the failure of the whole device is avoided.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to an MEMS supporting and electric connecting hole structure and a preparation method thereof.
Background
The traditional MEMS structure is generally provided with a support and an electric connection structure, and is used for supporting a micro-bridge structure and realizing electric connection, the conventional patterning process generally sets the structure into a side vertical structure so as to reduce the occupied area of the structure and improve the filling factor, but in order to improve the electric connection effect, the angle of a side wall can be made into an oblique angle smaller than 90 degrees so as to facilitate the step coverage rate of a follow-up film on the side wall to be improved, so that the filling space of the filling factor can be reduced, and the performance is reduced. Meanwhile, the support and electric connection hole structure and the micro-bridge deck structure form the projection area of the whole micro-bridge together, and the support and electric connection hole structure can occupy a larger area, so that the actual effective area of the micro-bridge is reduced, the filling factor can be reduced, external signals such as light and electromagnetic waves in various frequency bands are not facilitated to be absorbed by the micro-bridge deck, sensitive signals are reduced, and the performance of the product is integrally influenced.
Disclosure of Invention
The invention aims to overcome the defects that the sidewall of an MEMS supporting and electric connecting structure in the prior art is inwards inclined, the filling space of a filling factor is reduced, the performance is reduced and the like, and provides an MEMS supporting and electric connecting hole structure and a preparation method thereof.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a MEMS supports and connects pore structure with electricity, support and connect pore structure with electricity and be the throat bottle form, its bottleneck setting on the microbridge, the projected area of bottleneck is less than the projected area of body for realize the support to the microbridge and the electricity between microbridge and the substrate is connected.
Furthermore, the bottleneck, the bottle body and the bottle bottom of the necking bottle are sequentially provided with a metal electrode layer, a release protective layer, a support and a functional layer from outside to inside, the metal electrode layer at the bottle bottom comprises two layers which sequentially comprise a barrier layer and a viscosity layer from outside to inside, and the metal electrode layers of the rest parts are only provided with one layer which is the barrier layer.
Furthermore, the edge of the bottle bottom is connected with the metal layer on the substrate through the barrier layer, and the rest part is connected with the metal layer on the substrate through the viscosity layer.
Further, the barrier layer is made of a titanium nitride material, and the viscosity layer is made of a titanium material.
Further, the micro-bridge is connected with the metal layer on the substrate through the metal electrode layer of the necking bottle-shaped structure.
Furthermore, a release protective layer, a sensitive layer, a metal electrode layer, a release protective layer, a support and a functional layer are sequentially arranged on the surface of the micro-bridge.
Furthermore, the longitudinal section of the bottle body is in an outward convex arc shape, an outward expanding straight line shape or a vertical straight line shape.
A method for preparing a MEMS supporting and electrical connecting hole structure based on the above, comprising the steps of:
depositing a metal layer, a sacrificial layer, a release protection layer and a sensitive layer on a substrate in sequence, and etching the sensitive layer until the metal layer on the substrate is exposed to form a support and electric connection hole structure in a necking bottle shape;
depositing a titanium layer on the surface of the micro-bridge and the central area of the bottle bottom of the necking bottle-shaped structure by using a PVD physical vapor deposition process, and depositing a titanium nitride layer on the bottle mouth, the bottle body, the bottle bottom area and the surface of the micro-bridge of the necking bottle-shaped structure by using an MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology;
and thirdly, carrying out graphical treatment on the titanium nitride layer in the micro-bridge area, and depositing a release protective layer, a support and a functional layer on the bottle mouth, the bottle body, the bottle bottom area and the micro-bridge surface of the necking bottle shape by utilizing the MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology.
Further, etching the sensitive layer until the metal layer on the substrate is exposed, forming a straight hole structure, then etching the sacrificial layer corresponding to the inner side wall of the straight hole outwards by an isotropic etching technology to form a hole structure in a necking bottle shape, and etching the sensitive layer on two sides of the bottleneck area.
Further, the cross section of the straight hole is the same as the area of the titanium layer at the bottom of the bottle.
Has the advantages that:
the area of opening on the microbridge surface is less, forms the space of an indent towards the substrate, wholly is the support and the electric connection pore structure of throat bottle form, reduces the shared microbridge projection area of support and electric connection pore structure, can be under the prerequisite of guaranteeing effective electric connection, promotes the fill factor, is favorable to external signals such as light, the electromagnetic wave of each frequency channel to be absorbed by the microbridge bridge floor to promote the wholeness ability of light absorption rate and MEMS. Meanwhile, a titanium layer is formed on the bottle bottom and the surface of the microbridge through deposition by a PVD physical vapor deposition process, other layers are formed on the bottle opening, the bottle body, the bottle bottom and the surface of the microbridge through deposition by MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition, and the manufacturing of the supporting and electric connection hole structure is completed, so that the bottle opening and part of the bottle bottom are provided with the metal Ti layer, the bottle body is not provided with the metal Ti layer, but the whole necking bottle-shaped structure is provided with the supporting and electric connection hole structure of the metal electrode layer, the situation that released gas is corroded to other film layers through the metal Ti layer to cause the failure of the whole device is avoided, and the electric connection between the surface of the microbridge and the substrate.
The preparation method disclosed by the invention is simple to operate, low in cost, high in efficiency, strong in adaptability and extremely wide in application prospect.
Drawings
FIG. 1 is a schematic flow chart of example 1 of the present invention;
101-substrate, 102-metal layer, 103-sacrificial layer, 104-release protective layer, 105-sensitive layer, 106-titanium layer, 107-titanium nitride layer, and 108-support and functional layer.
Detailed Description
The following further describes the embodiments of the present invention with reference to the attached drawings.
The invention provides an MEMS supporting and electric connection hole structure, which is in a necking bottle shape, wherein a bottle mouth of the supporting and electric connection hole structure is arranged on a micro-bridge, and the projection area of the bottle mouth is smaller than that of a bottle body, so that the supporting of the micro-bridge and the electric connection between the micro-bridge and a substrate are realized. Because the area of the supporting and electric connection structure opened on the surface of the microbridge is smaller, an inwards concave space is formed towards the substrate, the whole microbridge is in a necking bottle shape, the projection area of the microbridge occupied by the supporting and electric connection hole structure is reduced, and meanwhile, on the premise of ensuring effective electric connection, the filling factor can be improved, and the absorption of external signals such as light, electromagnetic waves and the like of each frequency band by the bridge deck of the microbridge is facilitated, so that the light absorption rate and the integral performance of the MEMS are improved.
Specifically, the bottleneck, the bottle body and the bottle bottom of the bottle-shaped necking bottle are sequentially provided with a metal electrode layer, a release protective layer, a support and a functional layer from outside to inside, the metal electrode layer at the bottom of the bottle comprises two layers which sequentially comprise a barrier layer and a viscosity layer from outside to inside, the metal electrode layers of the rest parts are only provided with one layer and are barrier layers, preferably, the edge of the bottle bottom is connected with a metal layer on a substrate through the barrier layer, the rest parts are connected with the metal layer on the substrate through the viscosity layer, and correspondingly, the release protective layer, the sensitive layer, the metal electrode layer, the release protective layer, the support and the functional layer can be sequentially arranged on the surface of the microbridge. The barrier layer can be made of titanium nitride material, and the viscosity layer can be made of titanium material.
In this way, the metal electrode layer of the entire microbridge is connected to the metal layer on the substrate via the metal electrode layer of the necked-bottle structure. The microbridge structure is formed through a release process, the viscosity layer is arranged between the barrier layer at the bottom of the bottle and the metal layer on the substrate, the resistance of metal Ti is low, the resistance of titanium nitride TiN is slightly higher, but the titanium nitride TiN is difficult to be damaged by released gas, and the barrier layer can be made of other materials which are difficult to be damaged by the released gas, so that the viscosity layer, namely the metal Ti, can be well protected from being damaged by the released gas, and the effective electric connection between the microbridge structure and the substrate is ensured.
In consideration of the filling space of the filling factor, the corresponding side wall of the bottle body can be made into an outward convex arc shape or a linear or vertical linear shape which is outwards expanded in the direction larger than 90 degrees, namely the longitudinal section of the bottle body can be made into the outward convex arc shape, the outward expanded linear shape or the vertical linear shape. Therefore, on the premise of ensuring the supporting force for the microbridge, the filling space is increased as much as possible, and the overall performance of the device is improved.
The invention also provides a preparation method of the MEMS supporting and electric connecting hole structure, which comprises the following steps:
depositing a metal layer, a sacrificial layer, a release protection layer and a sensitive layer on a substrate in sequence, and etching the sensitive layer until the metal layer on the substrate is exposed to form a support and electric connection hole structure in a necking bottle shape;
specifically, the sensitive layer is etched until the metal layer on the substrate is exposed, a straight hole structure is formed first, then the sacrificial layer corresponding to the inner side wall of the straight hole is etched outwards through an isotropic etching technology to form a hole structure in the shape of a bottle with a reduced mouth, and the sensitive layer on two sides of the area of the bottle mouth is etched.
Since the sensitive layer material is generally damaged by the released gas, in order to avoid this problem, the rim of the bottle mouth is generally pushed somewhat towards the sides, and the subsequent film covers the pushed-in area, so that the subsequent film prevents possible damage even if a small amount of released gas may subsequently reach this.
The cross section of the straight hole is the same as the area of a subsequent bottle bottom titanium layer, a straight hole structure is formed through etching, then an isotropic etching process is adopted, a necking bottle-shaped structure with a small opening at the top is formed, a titanium layer is formed in the central area of the subsequent bottle bottom, and other areas of the bottle bottom and the bottle body are not provided with the titanium layer, so that a physical structure foundation is provided, and the titanium layer can be protected from being damaged by released gas.
Depositing a titanium layer on the surface of the micro-bridge and the central area of the bottle bottom of the necking bottle-shaped structure by using a PVD physical vapor deposition process, and depositing a titanium nitride layer on the bottle mouth, the bottle body, the bottle bottom area and the surface of the micro-bridge of the necking bottle-shaped structure by using an MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology;
and thirdly, carrying out graphical treatment on the titanium nitride layer in the micro-bridge area, and depositing a release protective layer, a support and a functional layer on the bottle mouth, the bottle body, the bottle bottom area and the micro-bridge surface of the necking bottle shape by utilizing the MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology.
The conventional PVD physical vapor deposition process has poor step side wall coverage, the CVD organic chemical vapor deposition process has good side wall coverage, particularly MOCVD/ALD and other film forming technologies, and a concave structure side wall can also form a good film, therefore, the invention utilizes the technical characteristics that firstly, a necking bottle-shaped supporting and electric connection hole structure which is provided with a small opening on the surface of a microbridge and a vertical side wall is formed, then, PVD physical vapor deposition process is utilized to deposit and form a titanium layer on the bottle bottom and the surface of the microbridge, MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology is utilized to deposit and form other layers on the surfaces of a bottle mouth, a bottle body, the bottle bottom and the microbridge, and the manufacturing of the supporting and electric connection hole structure is completed, so that the bottle mouth and part of the bottle bottom are provided with a metal Ti layer, the bottle body is not provided with the metal Ti layer, but the whole necking bottle-shaped structure is provided with the supporting and electric connection hole structure of a titanium nitride, thereby effectively ensuring the electric connection between the surface of the microbridge and the substrate.
The following describes the manufacturing process specifically with reference to fig. 1:
step1, depositing a metal layer 102 on a substrate 101, patterning, depositing a dielectric layer, and directly realizing surface planarization by chemical mechanical polishing;
step 2, continuing to deposit and form a sacrificial layer 103, a release protective layer 104 and a sensitive layer 105;
the sacrificial layer 103 may be configured as amorphous silicon or organic such as polyimide, and the sensitive layer 105 may be configured as amorphous silicon.
Step3, etching each layer of thin film on the surface until the metal layer 102 on the substrate 101 is exposed, and forming an initial state of a supporting and electric connection hole structure, namely a straight hole structure, wherein the cross section size of the straight hole structure can be determined by the area of the metal Ti layer 106 at the bottom of the supporting and electric connection hole structure;
step 4, reserving the photoresist for patterning in the Step, continuously etching the sacrificial layer 103 corresponding to the inner side wall of the straight hole structure outwards by an isotropic etching method such as a pure chemical etching method to form a necking bottle-shaped structure with a small opening on the surface of the microbridge and an inwards concave side wall of the straight hole, etching the sensitive layers 105 in the two side areas of the bottle mouth at the moment, so that necking necks are formed, and removing the photoresist; since the released gas released by the subsequent sacrificial layer 103 damages the Ti-Ti layer 106, increasing the lateral erosion of the sensitive layer 105, increasing the distance that the released gas contacts the sensitive layer 105 by corroding the Ti-Ti layer 106, and reducing the risk of damaging the sensitive layer 105.
Step 5, depositing a Ti titanium layer 106 on the surface of the microbridge and the central area of the bottle bottom by using a PVD physical vapor deposition process, and then depositing a TiN titanium nitride layer 107 on the surface of the microbridge, the bottle opening, the bottle body and the bottle bottom area by using an MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology to complete the deposition of a metal electrode layer of the whole microbridge, support and electric connection hole structure;
step 6, patterning the metal electrode layer, then depositing a release protective layer 104 and a support and functional layer 108 on the micro-bridge surface, the bottle mouth, the bottle body and the bottle bottom region by utilizing the MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology, and patterning the micro-bridge structure.
Although specific embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that these embodiments are merely illustrative and various changes or modifications may be made without departing from the principles and spirit of the invention.
Claims (10)
1. A MEMS support and electrical connection aperture structure, comprising: the supporting and electric connection hole structure is in a necking bottle shape, a bottle mouth of the supporting and electric connection hole structure is arranged on the microbridge, and the projection area of the bottle mouth is smaller than that of the bottle body, so that the supporting of the microbridge and the electric connection between the microbridge and the substrate are realized.
2. The MEMS support and electrical connection aperture structure of claim 1, wherein: the metal electrode layer at the bottom of the bottle comprises two layers, and comprises a barrier layer and a viscosity layer from outside to inside, and the metal electrode layers at the rest parts are only provided with one layer and are barrier layers.
3. The MEMS support and electrical connection aperture structure of claim 2, wherein: the edge of the bottle bottom is connected with the metal layer on the substrate through the barrier layer, and the rest part is connected with the metal layer on the substrate through the viscosity layer.
4. The MEMS support and electrical connection aperture structure of claim 2, wherein: the micro-bridge is connected with the metal layer on the substrate through the metal electrode layer of the necking bottle-shaped structure.
5. The MEMS support and electrical connection aperture structure of claim 3, wherein: the barrier layer is made of a titanium nitride material, and the viscosity layer is made of a titanium material.
6. The MEMS electrical connection aperture structure of claim 4, wherein: the surface of the microbridge is sequentially provided with a release protective layer, a sensitive layer, a metal electrode layer, a release protective layer, a support and a functional layer.
7. The MEMS electrical connection hole structure of claim 1, wherein: the longitudinal section of the bottle body is in an outward convex arc shape, an outward-opening linear shape or a vertical linear shape.
8. A method for preparing a MEMS supporting and electrical connecting hole structure according to claim 1, comprising the steps of:
depositing a metal layer, a sacrificial layer, a release protection layer and a sensitive layer on a substrate in sequence, and etching the sensitive layer until the metal layer on the substrate is exposed to form a support and electric connection hole structure in a necking bottle shape;
depositing a titanium layer on the surface of the micro-bridge and the central area of the bottle bottom of the necking bottle-shaped structure by using a PVD physical vapor deposition process, and depositing a titanium nitride layer on the bottle mouth, the bottle body, the bottle bottom area and the surface of the micro-bridge of the necking bottle-shaped structure by using an MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology;
and thirdly, carrying out graphical treatment on the titanium nitride layer on the surface of the microbridge, and depositing a release protective layer, a support and a functional layer on the bottle mouth, the bottle body and the bottle bottom area of the necking bottle and the surface of the microbridge by utilizing the MOCVD metal organic chemical vapor deposition or ALD atomic layer deposition technology.
9. The method of making a MEMS support and electrical connection aperture structure of claim 8, wherein: etching the sensitive layer until exposing the metal layer on the substrate, firstly forming a straight hole structure, then etching the sacrificial layer corresponding to the inner side wall of the straight hole outwards by an isotropic etching technology to form a hole structure in a necking bottle shape, and etching the sensitive layers on two sides of the bottleneck area.
10. The method of making a MEMS support and electrical connection aperture structure of claim 9, wherein: the cross section of the straight hole is the same as the titanium layer area at the bottom of the bottle.
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