CN111952416A - Solar cell preparation combination method and preparation device - Google Patents
Solar cell preparation combination method and preparation device Download PDFInfo
- Publication number
- CN111952416A CN111952416A CN202010921703.3A CN202010921703A CN111952416A CN 111952416 A CN111952416 A CN 111952416A CN 202010921703 A CN202010921703 A CN 202010921703A CN 111952416 A CN111952416 A CN 111952416A
- Authority
- CN
- China
- Prior art keywords
- chamber
- solar cell
- molybdenum
- fluff
- dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 54
- 239000011733 molybdenum Substances 0.000 claims abstract description 54
- 239000000428 dust Substances 0.000 claims abstract description 37
- 239000012535 impurity Substances 0.000 claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims abstract description 28
- 239000000523 sample Substances 0.000 claims abstract description 23
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 16
- 230000005686 electrostatic field Effects 0.000 claims description 12
- 239000011093 chipboard Substances 0.000 claims description 10
- 230000005520 electrodynamics Effects 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 7
- 239000000284 extract Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010813 municipal solid waste Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000005868 electrolysis reaction Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 239000002253 acid Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 5
- 238000005192 partition Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000243 photosynthetic effect Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/04—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area from a small area, e.g. a tool
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
- C25F1/02—Pickling; Descaling
- C25F1/04—Pickling; Descaling in solution
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses a solar cell preparation combination method and a preparation device, which belong to the technical field of solar cell preparation. According to the invention, through the mutual cooperation of the designed electrolyte solution, the electrostatic electret chamber, the positive piano wire, the electrolytic reaction generating chamber, the molybdenum net cage and the molybdenum net partition plate, fluff falling off from the fluff can be effectively removed, dust in the fluff is driven to move towards the direction of the probe by the fluff, the dust removal and fluff removal efficiency is high, more impurities can be avoided in the electrolytic reaction generating chamber during the electrolytic reaction, the phosphorosilicate glass layer formed on the surface of the silicon wafer can be effectively removed, the effect is higher compared with acid cleaning, and the diffusion dead layer on the surface of the silicon wafer can be effectively removed.
Description
Technical Field
The invention belongs to the technical field of solar cell preparation, and particularly relates to a solar cell preparation combination method and a solar cell preparation device.
Background
The solar cell is a device which directly or indirectly converts solar radiation energy into electric energy through a photoelectric effect or a photochemical effect by absorbing sunlight, most of solar cell panels are made of silicon, but the manufacturing cost is high, so that the solar cell has certain limitation in common use, and compared with a common cell and a recyclable rechargeable cell, the solar cell belongs to a more energy-saving and environment-friendly green product.
In the production and manufacturing process of the solar cell, the production process flow of the solar cell is divided into the process flows of silicon chip detection, surface texturing, diffusion knot making, phosphorosilicate glass removing, plasma etching, antireflection film plating, screen printing, rapid sintering and the like, wherein the phosphorosilicate glass removing is an unimportant process flow, because a layer of SiO2 containing phosphorus elements is formed on the surface of the silicon chip in the phosphorus diffusion process and is called as phosphorosilicate glass (PSG), however, the existing phosphorosilicate glass removing for solar cell preparation still adopts the traditional acid cleaning mode, the efficiency is low, a diffusion dead layer formed on the surface of the solar cell is difficult to remove, the concentration of an acid solution is high, the silicon chip plate is easy to be damaged, the concentration of the acid solution is low, the removal of the diffusion dead layer is not facilitated, the photosynthetic efficiency of the finished solar cell is seriously influenced, and a large amount of unfixed fluff and dust are easy to exist in the matte surface of the silicon, therefore, a solar cell preparation combination method and a preparation device are needed to solve the above problems in the market at the present stage.
Disclosure of Invention
The invention aims to: the method and the device for preparing the solar cell are provided for solving the problems that the traditional pickling mode is still adopted for preparing the phosphorated silicate glass for the solar cell, the efficiency is low, a diffusion dead layer formed on the surface of the solar cell is difficult to remove, the concentration of an acid solution is high, a silicon wafer plate is easy to damage, the concentration of the acid solution is low, the removal of the diffusion dead layer is not facilitated, the photosynthetic efficiency of the finished solar cell is seriously influenced, a large amount of unfixed fluff and dust are easy to exist in the fluff surface of the silicon wafer plate, and impurities exist in the pickling tank.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a solar cell's preparation facilities, includes the edulcoration room, the opening has been seted up to the side in edulcoration room, it has the electrodynamic type transmission band to alternate in the opening, the periphery of electrodynamic type transmission band is provided with the static electret room, be provided with anodal piano wire mount pad on the inside wall in static electret room, anodal piano wire mount pad terminal surface is provided with anodal piano wire to the position that corresponds the electrodynamic type transmission band, and the tip of anodal piano wire passes through anodal piano wire mount pad and the one end electric connection that the discharge wire is close to, and the discharge wire joint is at the top in static electret room, the inside in edulcoration room is provided with the seat that slides, the bottom fixedly connected with probe of seat slides, the top of probe is linked together through the air intake of first connecting pipe with the air pump, the air exit of air pump is linked together with the close one end of second connecting pipe, the other end of second connecting pipe is linked together with the top of dust collection chamber, the transmission afterbody of electrodynamic type transmission band is provided with the buffer pool, one side that the electrodynamic type transmission band was kept away from to the buffer pool is provided with the electrolytic reaction and takes place the room, the molybdenum net case has been cup jointed in the electrolytic reaction takes place the room, the inside of molybdenum net case is provided with the molybdenum grid board to the indoor metal sheet that is provided with of electrolytic reaction takes place.
As a further description of the above technical solution:
the bottom of the static electret chamber is connected with the ground through a grounding lead, and the induction distance between the anode piano wire and the peripheral conductive objects is more than 150 mm.
As a further description of the above technical solution:
the first connecting pipe is clamped at the top of the sliding seat and the top of the impurity removing chamber respectively, and the second connecting pipe is clamped at the top of the dust collecting chamber.
As a further description of the above technical solution:
the sliding seat is provided with a sliding type sealing door at the position corresponding to the through opening at the bottom, the top of the sliding type sealing door is fixedly connected with one end close to the hydraulic cylinder, and the other end of the hydraulic cylinder is fixedly connected with the inner side wall of the impurity removing chamber through a hydraulic cylinder installation rear seat.
As a further description of the above technical solution:
the opposite surfaces of the dust collection chamber and the impurity removal chamber are fixedly connected, and a chamber door is arranged on the front surface of the dust collection chamber.
As a further description of the above technical solution:
the metal plate is electrically connected with the negative electrode of the power supply, the positive electrode of the power supply is electrically connected with the molybdenum net cage, a switch is arranged between the molybdenum net cage and the power supply, a silicon sheet plate is arranged in an interlayer surrounded by the molybdenum net cage and the molybdenum grid plate, and the molybdenum net cage, the molybdenum grid plate, the silicon sheet plate and the metal plate are all positioned in electrolyte solution contained in the electrolytic reaction generating chamber.
As a further description of the above technical solution:
the components of the electrolyte solution are matched with the metal plate.
As a further description of the above technical solution:
the metal plate in the electrolytic reaction generating chamber is prepared from an alloy material of pure copper and pure silver.
As a further description of the above technical solution:
the pH value of the electrolyte solution is controlled to be 5.3-6.5.
As a further description of the above technical solution:
the method comprises the following preparation process:
step S1: starting the electric transmission belt, providing electric energy for the positive piano wire on the positive piano wire mounting seat through the discharge wire, and then starting the air pump to run;
step S2: after the transmission speed of the electric transmission belt tends to be stable, the silicon chip plates are uniformly arranged at the transmission head end of the electric transmission belt, and the suede on the silicon chip plates is ensured to be upward;
step S3: the silicon chip board is driven by the electric transmission belt to flow through the electrostatic electret chamber, the discharge wire generates an electrostatic field through the positive piano wire and acts on the silicon chip board, so that dust in the fluff surface can be adsorbed on the fluff under the action of the electrostatic field;
step S4: the silicon wafer plate flows through the impurity removing chamber under the driving of the electric transmission belt, after a certain amount of silicon wafer plates enter the impurity removing chamber, the electric transmission belt stops transmission work, then the hydraulic cylinder does extension action and pushes the sliding type sealing door to move downwards through the sliding seat to seal the through opening, and the air pump can extract air in the impurity removing chamber through the probe in the working process, so that fluff falling from the fluff surface can be effectively removed, dust in the fluff surface is driven to move towards the probe through the fluff, and the dust removing efficiency is high;
step S5: the silicon wafer plates flowing into the buffer pool are uniformly arranged in an interlayer formed by the molybdenum net cage and the molybdenum grid plate, the switch is turned on, the power supply is utilized to supply power, and the molybdenum net cage, the silicon wafer plates, the electrolyte solution and the metal plate are subjected to electrolytic reaction, so that a phosphorosilicate glass layer formed on the surface of the silicon wafer plate can be effectively removed.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. according to the invention, through the mutual cooperation of the designed electrolyte solution, the electrostatic electret chamber, the positive piano wire, the hydraulic cylinder, the electrolytic reaction generating chamber, the molybdenum net cage and the molybdenum net partition plate, fluff falling from the fluff can be effectively removed, dust in the fluff is driven to move towards the direction of the probe through the fluff, the dust removal and fluff removal efficiency is high, more impurities can be avoided in the electrolytic reaction generating chamber during the electrolytic reaction, the phosphorosilicate glass layer formed on the surface of the silicon wafer plate can be effectively removed, the effect is higher compared with acid cleaning, and the diffusion dead layer on the surface of the silicon wafer plate can be effectively removed.
2. In the invention, through the designed electrostatic electret chamber, the discharge wire and the anode piano wire, the silicon chip plate flows through the electrostatic electret chamber under the driving of the electric transmission belt, the discharge wire generates an electrostatic field through the anode piano wire and acts on the silicon chip plate, so that dust in the nap surface can be adsorbed on the nap under the action of the electrostatic field, through the designed impurity removal chamber, the hydraulic cylinder, the air pump, the sliding type sealing door and the probe, the silicon chip plate flows through the impurity removal chamber under the driving of the electric transmission belt, after a certain amount of silicon chip plate enters the impurity removal chamber, the electric transmission belt suspends the transmission work, then the hydraulic cylinder does the extension action and pushes the sliding type sealing door to move downwards through the sliding seat to seal the through hole, the sealing effect is incomplete, so that a negative pressure space can be formed inside the impurity removal chamber, and in the working process of the air pump, the probe can extract the air in the impurity removal chamber, the down fallen in the pile face can be effectively removed, the dust in the pile face is driven to move towards the direction of the probe by the down, and the dust removal and down removal efficiency is high.
3. According to the invention, through the designed molybdenum net cage, the molybdenum grid plate, the electrolyte solution and the metal plate, the silicon wafer plates flowing into the buffer pool are uniformly arranged in the interlayer formed by the molybdenum net cage and the molybdenum grid plate, the switch is turned on, the power supply is utilized to supply power, the molybdenum net cage, the silicon wafer plates, the electrolyte solution and the metal plate are subjected to electrolytic reaction, the phosphorosilicate glass layer formed on the surface of the silicon wafer plate can be effectively removed, the effect is higher compared with acid cleaning, and the diffusion dead layer on the surface of the silicon wafer plate can be effectively removed.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of a solar cell manufacturing assembly method and a solar cell manufacturing apparatus according to the present invention;
FIG. 2 is a schematic cross-sectional view of a solar cell manufacturing assembly and a manufacturing apparatus according to the present invention, as viewed from the front of an impurity removal chamber;
FIG. 3 is an enlarged schematic structural view of a solar cell manufacturing assembly method and a manufacturing apparatus A according to the present invention;
FIG. 4 is an enlarged schematic structural diagram of a solar cell manufacturing assembly method and a manufacturing apparatus B according to the present invention;
FIG. 5 is a circuit diagram of the electrolytic reaction of the solar cell manufacturing assembly method and the manufacturing apparatus according to the present invention.
Illustration of the drawings:
1. an impurity removal chamber; 2. a port; 3. an electric conveyor belt; 4. an electrolyte solution; 5. an electrostatic electret chamber; 6. a ground lead; 7. positive piano wire; 8. discharging wires; 9. a positive piano wire mounting base; 10. sliding type door sealing; 11. a first connecting pipe; 12. a sliding seat; 13. a probe; 14. a hydraulic cylinder; 15. a rear seat is installed on the hydraulic cylinder; 16. an air pump; 17. a second connecting pipe; 18. a dust collecting chamber; 19. a chamber door; 20. a buffer pool; 21. an electrolytic reaction generation chamber; 22. a molybdenum net cage; 23. a molybdenum grid plate; 24. a metal plate; 25. a silicon wafer plate; 26. a switch; 27. a power source.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-5, the present invention provides a technical solution: a solar cell preparation device comprises an impurity removal chamber 1, a through hole 2 is formed in the side face of the impurity removal chamber 1, an electric transmission belt 3 is inserted into the through hole 2, an electrostatic electret chamber 5 is arranged on the periphery of the electric transmission belt 3, a positive piano wire mounting seat 9 is arranged on the inner side wall of the electrostatic electret chamber 5, a positive piano wire 7 is arranged on the end face of the positive piano wire mounting seat 9 corresponding to the position of the electric transmission belt 3, the end part of the positive piano wire 7 is electrically connected with one end, close to a discharge wire 8, of the positive piano wire mounting seat 9, the discharge wire 8 is clamped at the top of the electrostatic electret chamber 5, a sliding seat 12 is arranged inside the impurity removal chamber 1, a probe 13 is fixedly connected to the bottom of the sliding seat 12, the top of the probe 13 is communicated with an air inlet of an air pump 16 through a first connecting pipe 11, an air outlet of the air pump 16 is communicated with one end, close to an air outlet of a second, the other end of the second connecting pipe 17 is communicated with the top of the dust collecting chamber 18, a buffer tank 20 is arranged at the transmission tail part of the electric transmission belt 3, an electrolytic reaction generating chamber 21 is arranged at one side of the buffer tank 20 far away from the electric transmission belt 3, a molybdenum net cage 22 is sleeved in the electrolytic reaction generating chamber 21, a silicon wafer plate 25 flowing into the buffer tank 20 is uniformly arranged in an interlayer formed by the molybdenum net cage 22 and the molybdenum net cage 23 through the designed molybdenum net cage 22, the molybdenum net cage 23, an electrolyte solution 4 and a metal plate 24, a switch 26 is opened, power is supplied by using a power supply 27, an electrolytic reaction is generated among the molybdenum net cage 22, the silicon wafer plate 25, the electrolyte solution 4 and the metal plate 24, a phosphorosilicate glass layer formed on the surface of the silicon wafer plate 25 can be effectively removed, the effect is higher compared with acid cleaning, a diffusion dead layer on the surface of the silicon wafer plate 25 can be effectively removed, the molybdenum net cage 23 is arranged, and a metal plate 24 is provided in the electrolytic reaction generation chamber 21.
Specifically, as shown in fig. 1, the bottom of the electrostatic electret chamber 5 is connected with the ground through a ground wire 6, the induction distance between the positive electrode piano wire 7 and the peripheral conductive objects is greater than 150 mm, through the designed electrostatic electret chamber 5, the discharge wire 8 and the positive electrode piano wire 7, the silicon sheet plate 25 flows through the electrostatic electret chamber 5 under the driving of the electric transmission belt 3, the discharge wire 8 generates an electrostatic field through the positive electrode piano wire 7 and acts on the silicon sheet plate 25, and then dust in the nap surface can be adsorbed on the nap under the action of the electrostatic field.
Specifically, as shown in fig. 1, a first connecting pipe 11 is respectively clamped at the top of a sliding seat 12 and the top of an impurity removing chamber 1, a second connecting pipe 17 is clamped at the top of a dust collecting chamber 18, through the designed impurity removing chamber 1, a hydraulic cylinder 14, an air pump 16, a sliding type sealing door 10 and a probe 13, a silicon sheet 25 flows through the impurity removing chamber 1 under the drive of an electric transmission belt 3, after a certain amount of silicon sheet 25 enters the impurity removing chamber 1, the electric transmission belt 3 stops transmission work, then, the hydraulic cylinder 14 performs stretching action and pushes the sliding type sealing door 10 to move downwards through the sliding seat 12 to seal a through opening 2, the sealing effect is incomplete, so that a negative pressure space can be formed inside the impurity removing chamber 1, the air pump 16 can extract air in the impurity removing chamber 1 through the probe 13 in the working process, fluff falling fluff in the fluff can be effectively removed, and dust in the fluff is driven to move towards the direction of the probe 13, the dust removal and the down removal efficiency are high.
Specifically, as shown in fig. 1, a sliding type sealing door 10 is arranged at the bottom of the sliding seat 12 corresponding to the position of the through opening 2, the top of the sliding type sealing door 10 is fixedly connected with one end close to a hydraulic cylinder 14, and the other end of the hydraulic cylinder 14 is fixedly connected with the inner side wall of the impurity removing chamber 1 through a hydraulic cylinder installation rear seat 15.
Specifically, as shown in fig. 1, a dust collecting chamber 18 is fixedly connected to an opposite surface of the trash chamber 1, and a chamber door 19 is provided on a front surface of the dust collecting chamber 18.
Specifically, as shown in fig. 5, the metal plate 24 is electrically connected to the negative electrode of the power supply 27, the positive electrode of the power supply 27 is electrically connected to the molybdenum mesh box 22, a switch 26 is disposed between the molybdenum mesh box 22 and the power supply 27, the silicon sheet plate 25 is disposed in the interlayer surrounded by the molybdenum mesh box 22 and the molybdenum mesh plate 23, and the molybdenum mesh box 22, the molybdenum mesh plate 23, the silicon sheet plate 25 and the metal plate 24 are all located in the electrolyte solution 4 contained in the electrolytic reaction generating chamber 21.
Specifically, as shown in fig. 1, the components of the electrolyte solution 4 are matched with the metal plate 24.
Specifically, as shown in fig. 1, the metal plate 24 in the electrolytic reaction generation chamber 21 is made of an alloy material of pure copper and pure silver.
Specifically, as shown in fig. 1, the pH of the electrolyte solution 4 is controlled to 5.3 to 6.5.
Specifically, as shown in fig. 1, the method comprises the following preparation process:
step S1: starting the electric transmission belt 3, providing electric energy for the positive piano wire 7 on the positive piano wire mounting seat 9 through the discharge wire 8, and then starting the air pump 16 to operate;
step S2: after the transmission speed of the electric transmission belt 3 tends to be stable, the silicon chip boards 25 are uniformly arranged at the transmission head end of the electric transmission belt 3, and the suede of the silicon chip boards 25 is ensured to be upward;
step S3: the silicon chip board 25 is driven by the electric transmission belt 3 to flow through the electrostatic electret chamber 5, the discharge wire 8 generates an electrostatic field through the anode piano wire 7 and acts on the silicon chip board 25, and then dust in the nap surface can be adsorbed on the nap under the action of the electrostatic field;
step S4: the silicon wafer plates 25 flow through the impurity removing chamber 1 under the driving of the electric conveying belt 3, after a certain amount of silicon wafer plates 25 enter the impurity removing chamber 1, the electric conveying belt 3 stops conveying work, then the hydraulic cylinder 14 extends and pushes the sliding type sealing door 10 to move downwards through the sliding seat 12 to seal the through opening 2, and the air pump 16 can extract air in the impurity removing chamber 1 through the probe 13 in the working process, so that fluff falling from the fluff surface can be effectively removed, and dust in the fluff surface is driven to move towards the probe 13 through the fluff, so that the dust removing efficiency is high;
step S5: the silicon wafer plates 25 flowing into the buffer tank 20 are uniformly arranged in an interlayer formed by the molybdenum net cage 22 and the molybdenum grid plate 23, the switch 26 is turned on, the power supply 27 is utilized to supply power, and the molybdenum net cage 22, the silicon wafer plates 25, the electrolyte solution 4 and the metal plate 24 are subjected to electrolytic reaction, so that a phosphorosilicate glass layer formed on the surfaces of the silicon wafer plates 25 can be effectively removed.
The working principle is as follows: when the device is used, the electric transmission belt 3 is started, the positive piano wire 7 on the positive piano wire mounting seat 9 is supplied with electric energy through the discharge wire 8, then the air pump 16 is started to operate, after the transmission speed of the electric transmission belt 3 tends to be stable, the silicon sheet plate 25 is uniformly arranged at the transmission head end of the electric transmission belt 3, the suede face on the silicon sheet plate 25 is ensured to be upward, the silicon sheet plate 25 flows through the electrostatic electret chamber 5 under the driving of the electric transmission belt 3, the discharge wire 8 generates an electrostatic field through the positive piano wire 7 and acts on the silicon sheet plate 25, so that dust in the suede face can be adsorbed on fluff under the action of the electrostatic field, the silicon sheet plate 25 flows through the impurity removing chamber 1 under the driving of the electric transmission belt 3, after a certain amount of the silicon sheet plate 25 enters the impurity removing chamber 1, the electric transmission belt 3 stops transmission work, then the hydraulic cylinder 14 does stretching action and pushes the sliding type sealing door 10 to move downwards through the sliding seat 12 to seal the through hole 2, in the working process of the air pump 16, air in the impurity removing chamber 1 can be extracted through the probe 13, fluff falling from the fluff can be effectively removed, dust in the fluff is driven to move towards the probe 13 through the fluff, the dust removing efficiency is high, the silicon wafer plates 25 flowing into the buffer pool 20 are uniformly arranged in an interlayer formed by the molybdenum net cage 22 and the molybdenum grid plates 23, the switch 26 is turned on, power is supplied by the power supply 27, and an electrolytic reaction occurs among the molybdenum net cage 22, the silicon wafer plates 25, the electrolyte solution 4 and the metal plates 24, so that a phosphorosilicate glass layer formed on the surfaces of the silicon wafer plates 25 can be effectively removed.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical scope of the present invention and the equivalent alternatives or modifications according to the technical solution and the inventive concept of the present invention within the technical scope of the present invention.
Claims (10)
1. The utility model provides a solar cell's preparation facilities, includes edulcoration room (1), its characterized in that, opening (2) have been seted up to the side of edulcoration room (1), it has electrodynamic type transmission band (3) to alternate in opening (2), the periphery of electrodynamic type transmission band (3) is provided with static and resides utmost point room (5), be provided with anodal piano silk mount pad (9) on the inside wall of static and reside utmost point room (5), anodal piano silk mount pad (9) terminal surface corresponds the position of electrodynamic type transmission band (3) and is provided with anodal piano silk (7), and the tip of anodal piano silk (7) passes through anodal piano silk mount pad (9) and the close one end electric connection of wire (8) to discharge silk (8) joint is at the top of static and resides utmost point room (5), the inside of edulcoration room (1) is provided with and slides seat (12), the bottom fixedly connected with probe (13) of seat (12), the top of probe (13) is linked together through the air intake of first connecting pipe (11) with air pump (16), the air exit of air pump (16) is linked together with the one end that second connecting pipe (17) are close, the other end of second connecting pipe (17) is linked together with the top of dust collecting chamber (18), the transmission afterbody of electrodynamic type transmission band (3) is provided with buffer pool (20), one side that electrodynamic type transmission band (3) were kept away from in buffer pool (20) is provided with electrolytic reaction emergence room (21), molybdenum net cage (22) have been cup jointed in electrolytic reaction emergence room (21), the inside of molybdenum net cage (22) is provided with molybdenum grid plate (23) to be provided with metal sheet (24) in electrolytic reaction emergence room (21).
2. The solar cell manufacturing device according to claim 1, wherein the bottom of the electrostatic electret chamber (5) is connected to the ground through a grounding wire (6), and the induction distance of the positive piano wire (7) from the peripheral conductor is more than 150 mm.
3. The apparatus for preparing a solar cell according to claim 1, wherein the first connecting pipe (11) is clamped on the top of the sliding base (12) and the top of the trash chamber (1), and the second connecting pipe (17) is clamped on the top of the dust chamber (18).
4. The device for preparing the solar cell according to claim 1, wherein a sliding sealing door (10) is arranged at the bottom of the sliding seat (12) corresponding to the position of the through hole (2), the top of the sliding sealing door (10) is fixedly connected with one end close to the hydraulic cylinder (14), and the other end of the hydraulic cylinder (14) is fixedly connected with the inner side wall of the impurity removing chamber (1) through a hydraulic cylinder installation rear seat (15).
5. The device for preparing the solar cell according to claim 1, wherein the dust collecting chamber (18) is fixedly connected with the opposite surface of the impurity removing chamber (1), and a chamber door (19) is arranged on the front surface of the dust collecting chamber (18).
6. The device for preparing the solar cell according to claim 1, wherein the metal plate (24) is electrically connected with a negative electrode of a power supply (27), a positive electrode of the power supply (27) is electrically connected with the molybdenum mesh box (22), a switch (26) is arranged between the molybdenum mesh box (22) and the power supply (27), a silicon sheet plate (25) is arranged in a sandwich layer formed by the molybdenum mesh box (22) and the molybdenum mesh plate (23), and the molybdenum mesh box (22), the molybdenum mesh plate (23), the silicon sheet plate (25) and the metal plate (24) are all positioned in the electrolyte solution (4) contained in the electrolysis reaction generating chamber (21).
7. The apparatus for manufacturing a solar cell according to claim 1, wherein the electrolyte solution (4) is composed of a composition suitable for the metal plate (24).
8. The manufacturing apparatus of a solar cell according to claim 1, wherein the metal plate (24) in the electrolytic reaction generating chamber (21) is made of an alloy material of pure copper and pure silver.
9. The apparatus for manufacturing a solar cell according to claim 1, wherein the pH value of the electrolyte solution (4) is controlled to be 5.3 to 6.5.
10. The method as claimed in claims 1 to 9, wherein the method comprises the following steps:
step S1: starting the electric transmission belt (3), providing electric energy for the anode piano wire (7) on the anode piano wire mounting seat (9) through the discharge wire (8), and then starting the air pump (16) to operate;
step S2: after the transmission speed of the electric transmission belt (3) tends to be stable, the silicon chip boards (25) are uniformly arranged at the transmission head end of the electric transmission belt (3), and the suede on the silicon chip boards (25) is ensured to be upward;
step S3: the silicon chip board (25) is driven by the electric transmission belt (3) to flow through the electrostatic electret chamber (5), the discharge wire (8) generates an electrostatic field through the positive piano wire (7) and acts on the silicon chip board (25), so that dust in the nap surface can be adsorbed on the nap under the action of the electrostatic field;
step S4: the silicon chip plates (25) flow through the impurity removing chamber (1) under the drive of the electric conveying belt (3), after a certain amount of silicon chip plates (25) enter the impurity removing chamber (1), the electric conveying belt (3) suspends the transmission work, then, the hydraulic cylinder (14) performs the stretching action and pushes the sliding type sealing door (10) to move downwards to seal the through opening (2), the air pump (16) can extract the air in the impurity removing chamber (1) through the probe (13) in the working process, so that fluff falling from the fluff surface can be effectively removed, and dust in the fluff surface is driven to move towards the probe (13) through the fluff, and the dust removing efficiency is high;
step S5: the silicon sheet plates (25) flowing into the buffer pool (20) are uniformly arranged in an interlayer surrounded by the molybdenum net cage (22) and the molybdenum grid plate (23), a switch (26) is turned on, power is supplied by a power supply (27), and an electrolytic reaction occurs among the molybdenum net cage (22), the silicon sheet plates (25), the electrolyte solution (4) and the metal plate (24), so that a phosphorosilicate glass layer formed on the surfaces of the silicon sheet plates (25) can be effectively removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010921703.3A CN111952416A (en) | 2020-09-04 | 2020-09-04 | Solar cell preparation combination method and preparation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010921703.3A CN111952416A (en) | 2020-09-04 | 2020-09-04 | Solar cell preparation combination method and preparation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111952416A true CN111952416A (en) | 2020-11-17 |
Family
ID=73356282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010921703.3A Pending CN111952416A (en) | 2020-09-04 | 2020-09-04 | Solar cell preparation combination method and preparation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111952416A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113106533A (en) * | 2021-04-06 | 2021-07-13 | 南京航空航天大学 | Flat jet flow electrolytic etching device and method for metal electric heating wire |
-
2020
- 2020-09-04 CN CN202010921703.3A patent/CN111952416A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113106533A (en) * | 2021-04-06 | 2021-07-13 | 南京航空航天大学 | Flat jet flow electrolytic etching device and method for metal electric heating wire |
| CN113106533B (en) * | 2021-04-06 | 2022-02-18 | 南京航空航天大学 | Flat jet flow electrolytic etching device and method for metal electric heating wire |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108172648A (en) | A kind of solar cell module and its preparation process | |
| CN106784105A (en) | A kind of high mechanical load solar cell module and preparation method thereof | |
| CN111952416A (en) | Solar cell preparation combination method and preparation device | |
| CN204029828U (en) | A kind of generating electricity on two sides solar cell hollow assembly | |
| CN212571025U (en) | Preparation device of solar cell | |
| CN205657148U (en) | A circulating and filtering system for aluminium -air cell | |
| CN106876486B (en) | String formation connection structure, component and the method for P-type crystal silicon back contacts double-side cell | |
| CN214892256U (en) | Efficient lithium cell air-dries mechanism | |
| CN109412527A (en) | A kind of photovoltaic power generation apparatus suitable for glazed tiles Roof of the house | |
| CN211134692U (en) | Photovoltaic power generation board belt cleaning device | |
| CN104576824A (en) | Novel method for slotting front grid line electrode of crystalline silicon solar battery and manufacturing method of solar battery | |
| CN210156387U (en) | Large-size solar cell | |
| CN209668966U (en) | A kind of city river pollution source apportionment device | |
| CN202004004U (en) | Solar battery and component thereof | |
| CN208014711U (en) | A kind of p-type IBC electrode of solar battery structures | |
| CN202977494U (en) | Crystalline silicon/amorphous silicon double-face double battery | |
| CN218485586U (en) | Steam-water separation device for thermal power plant | |
| CN112779605B (en) | Photovoltaic texturing device with drying function | |
| CN216427425U (en) | Wet cuprous oxide production line | |
| CN2727193Y (en) | Static impurity-removing machine for seed cotton | |
| CN211865448U (en) | Electrostatic dust removing equipment | |
| CN1794471A (en) | Two-sided lighted power generation vertical setting photovoltaic wall plate | |
| CN208612059U (en) | A kind of filter cylinder integrated dust remover | |
| CN110508086A (en) | A kind of novel air purifying apparatus | |
| CN212627802U (en) | High-efficient belt cleaning device of solar photovoltaic board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |