CN111952292A - Light emitting device and method for manufacturing the same - Google Patents
Light emitting device and method for manufacturing the same Download PDFInfo
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- CN111952292A CN111952292A CN202010929255.1A CN202010929255A CN111952292A CN 111952292 A CN111952292 A CN 111952292A CN 202010929255 A CN202010929255 A CN 202010929255A CN 111952292 A CN111952292 A CN 111952292A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
The invention provides a light-emitting device and a preparation method thereof, wherein the device comprises: flip-chip LED chip; the silica gel protective layer is arranged on the light-emitting side surface of the flip LED chip; the light emitting layer is arranged on the surface of the silica gel protective layer on the surface of the light emitting side opposite to the surface of the electrode side in the flip LED chip and comprises a light conversion material; the barrier layer is arranged on the surface of the light emitting layer and used for protecting the light emitting layer; and the light reflecting layer is arranged on the periphery of the flip LED chip and on the side surface of the electrode, and light reflecting particles are contained in the light reflecting layer. The light conversion material in the light emitting layer is surrounded by the silica gel protective layer, the blocking layer and the light reflection layer, so that the problem of unstable performance in the use process is solved, and the color gamut and the brightness of the light emitting device are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a light-emitting device and a preparation method thereof.
Background
With the rapid development of display technology, people have higher and higher requirements on displays, and most of televisions and mobile phones currently adopt an LED as a backlight source based on the characteristics of high luminous efficiency, low carbon, environmental protection and energy conservation of the LED. In order to meet the requirement of high color gamut coverage of the LED backlight, the industry tries to introduce some new phosphor materials with narrow half-wave width, but the materials have some reliability defects and unstable performance in the using process.
Disclosure of Invention
In order to overcome the defects, the invention provides a light-emitting device and a preparation method thereof, which effectively solve the technical problem of unstable performance in the process of applying a narrow half-wave width new fluorescent powder material in the prior art.
The technical scheme provided by the invention is as follows:
a light emitting device comprising:
flip-chip LED chip;
the silica gel protective layer is arranged on the light-emitting side surface of the flip LED chip;
the light emitting layer is arranged on the surface of the silica gel protective layer on the surface of the light emitting side opposite to the surface of the electrode side in the flip LED chip and comprises a light conversion material;
the barrier layer is arranged on the surface of the light emitting layer and used for protecting the light emitting layer; and
and the light reflecting layer is arranged on the periphery of the flip LED chip and on the side surface of the electrode, and contains light reflecting particles.
A method of making a light emitting device comprising:
preparing a barrier layer on the surface of the support film;
preparing a light emitting layer on the surface of the barrier layer, wherein the light emitting layer contains a light conversion material;
preparing a silica gel protective layer with viscosity on the surface of the light emergent layer, wherein the viscosity of the silica gel protective layer is more than 1000 mpa.s;
arranging a plurality of flip LED chips on the surface of the silica gel protective layer, and pressing; after the pressing, the thickness of the silica gel protective layer on the side surface of the flip LED chip is not more than that of the flip LED chip;
curing the pressed silica gel protective layer, and cutting to obtain a single white light chip;
rearranging the white light chips obtained by cutting on the surface of the support film, and filling light reflection glue between the white light chips to prepare a light reflection layer; the surface of the light reflection layer is not higher than the surface of the electrode;
and cutting along the light reflecting layer between the white light chips to obtain the single light-emitting device.
In the light-emitting device and the preparation method thereof provided by the invention, the film pasting process is completed in a mode of preparing the adhesive silica gel protective layer on the surface of the light emergent layer, and compared with the light-emitting device prepared by the method in the prior art, the brightness of the light-emitting device is improved by 1.5-3% in a silica gel-free structure or a small amount of silica gel structure. In addition, the method can simply and conveniently realize the preparation of the silica gel structure around the flip LED chip, and compared with the silica gel structure formed by other structures, the preparation method is simple and easy to realize, and simultaneously increases the light-emitting angle of the light-emitting device to 150 degrees. Moreover, the light conversion material KSF or KGF or QD in the light emitting layer is surrounded by the silica gel protective layer, the blocking layer and the light reflection layer, so that the problem of unstable performance in the use process is solved, and the color gamut and the brightness of the light emitting device are improved.
Drawings
FIG. 1 is a schematic view of a light-emitting device according to the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a light-emitting device according to the present invention.
Description of the drawings:
the LED light source comprises a 1-flip LED chip, a 2-silica gel protective layer, a 3-light emitting layer, a 4-blocking layer, a 5-light reflecting layer and a 6-support film.
Detailed Description
In order to more clearly illustrate the embodiment of the present invention or the technical solutions in the prior art, the following description will explain embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
As shown in fig. 1, a schematic structural diagram of a light emitting device provided by the present invention is shown, and as can be seen from the diagram, the light emitting device includes: flip-chip LED chip 1; a silica gel protective layer 2 arranged on the light-emitting side surface of the flip LED chip 1; the light emitting layer 3 is arranged on the surface of the silica gel protective layer 2 on the light emitting side surface opposite to the electrode side surface in the flip LED chip 1, and the light emitting layer 3 contains a light conversion material; the blocking layer 4 is arranged on the surface of the light emitting layer 3 and used for protecting the light emitting layer 3; and the light reflecting layer 5 is arranged on the periphery of the flip LED chip 1 and on the side surface of the electrode, and the light reflecting layer 5 contains light reflecting particles.
In the light-emitting device, the thickness of the silica gel protective layer 2 around the flip LED chip 1 is not more than that of the flip LED chip 1, namely, the silica gel protective layer 2 cannot overflow to the side surface of the electrode of the chip 1. The surface of the light reflection layer 5 is not higher than the surface of the electrode, and in the example, as shown in fig. 1, the surface of the light reflection layer 5 is flush with the surface of the electrode of the chip 1.
The light conversion material in the light extraction layer 3 is KSF, KGF or QD, wherein KSF/KGF (S in KSF specifically refers to Si element, and G in KGF refers to Ge element) refers to a-containing layer2(MF6) Abbreviation for one type of compound of formula Mn4+, wherein A is Li, Na, K, Rb, Cs or NH4M is one or more element combination of Ge, Si, Sn, Ti or Zr; QD quantum dot is a new type nano material, its grain diameter is 2-20 nm, after being excited it can give out energy spectrum concentrated, pure high-quality red, green monochromatic light. In practical application, the thickness of the light emitting layer is 70-100 μm, the silica gel is doped with a corresponding light conversion material for use, and the mass ratio of the components is determined according to requirements and is not specifically limited herein. The barrier layer 4 is prepared from silicon dioxide or titanium dioxide, the mass ratio of silica gel to silicon dioxide/titanium dioxide is 1-100%, and the thickness is 40-100 μm.
The present invention also provides a method for manufacturing a light emitting device, as shown in fig. 2, including:
1.1 preparing a barrier layer 4 on the surface of a support film 6 and baking for forming, as shown in FIG. 2 (a). Specifically, the barrier layer 4 is prepared from silicon dioxide or titanium dioxide, the mass ratio of silica gel to silicon dioxide/titanium dioxide is 1% -100%, and the thickness is 40 μm-100 μm.
1.2 preparing a light emitting layer 3 on the surface of the barrier layer 4 and baking for forming, as shown in fig. 2 (b). Specifically, the light-emitting layer 3 includes a KSF or KGF or QD light conversion material, wherein KSF/KGF (in KSF)S specifically represents Si element, G in KGF represents Ge element) means containing A2(MF6) Abbreviation for one type of compound of formula Mn4+, wherein A is Li, Na, K, Rb, Cs or NH4M is one or more element combination of Ge, Si, Sn, Ti or Zr; QD quantum dot is a new type nano material, its grain diameter is 2-20 nm, after being excited it can give out energy spectrum concentrated, pure high-quality red, green monochromatic light. In practical application, the thickness of the light emitting layer is 70-100 μm, the silica gel is doped with a corresponding light conversion material for use, and the mass ratio of the components is determined according to requirements and is not specifically limited herein. The barrier layer 4 is prepared from silicon dioxide or titanium dioxide, the mass ratio of silica gel to silicon dioxide/titanium dioxide is 1-100%, and the thickness is 40-100 μm.
1.3 preparing a silica gel protective layer 2 with viscosity on the surface of the light emergent layer 3, as shown in fig. 2 (c). Here, the tackiness means that the silicone protective layer 2 is in an incompletely cured state, that is, a state in which solid and liquid coexist and cannot flow. The silicon gel protective layer 2 which is not completely solidified and has the ability of adhering the chip can be obtained by baking the silicon gel protective layer at the temperature of between 50 and 120 ℃ (the viscosity is more than 1000 mpa.s).
1.4 arranging a plurality of flip-chip LED chips 1 on the surface of the silica gel protection layer 2, and performing vacuum lamination under a laminator device to embed the chips into the silica gel protection layer 2, as shown in fig. 2(d) and 2 (e). Here, in order to guarantee that transparent silica gel can not spill over to the electrode side surface of flip LED chip 1 after chip light-emitting and the pressfitting, can prescribe a limit to the thickness of silica gel protective layer 2 according to actual conditions, guarantee that the transparent silica gel thickness around the flip LED chip 1 is not more than the thickness of chip after the pressfitting. For the flip-chip LED chip, the thickness is generally 150 to 250 μm, and for this purpose, the thickness of the silicone protective layer may be limited to be smaller than that of the flip-chip LED chip, for example, when the thickness of the flip-chip LED chip is 200 μm, the thickness of the silicone protective layer is limited to be not more than 50 μm (the thickness may be limited to be between 10 to 50 μm). It should be clear that, since the rising height of the silicone protective layer after lamination is limited by factors such as the area of the support film and the number of the flip-chip LED chips, besides the thickness of the silicone protective layer, the thickness of the silicone protective layer is not specifically limited, and the purpose of the invention can be achieved in practical application.
1.5 curing the pressed silica gel protective layer 2, and cutting to obtain a single white light chip, as shown in fig. 2 (f).
1.6 rearranging the cut white chips on the surface of the support film 6, and filling light reflecting glue between the white chips to prepare the light reflecting layer 5, as shown in fig. 2 (g). Specifically, the light reflecting glue is internally doped with reflecting particles such as titanium dioxide, so that the reflectivity of the light reflecting glue is more than 95%. In order to make the surface of the light reflection layer 5 not higher than the surface of the electrode, the chip is subjected to a polishing operation, if necessary, as shown in fig. 2 (h).
1.7 cutting, spot measuring, sorting along the light reflecting layer 5 between the white chips to obtain a single light emitting device as shown in fig. 1.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A light-emitting device, comprising:
flip-chip LED chip;
the silica gel protective layer is arranged on the light-emitting side surface of the flip LED chip;
the light emitting layer is arranged on the surface of the silica gel protective layer on the surface of the light emitting side opposite to the surface of the electrode side in the flip LED chip and comprises a light conversion material;
the barrier layer is arranged on the surface of the light emitting layer and used for protecting the light emitting layer; and
and the light reflecting layer is arranged on the periphery of the flip LED chip and on the side surface of the electrode, and contains light reflecting particles.
2. A light emitting device according to claim 1, wherein the light converting material in the light emitting layer is KSF or KGF or QD; and/or the thickness of the light emitting layer is 70-100 mu m.
3. The light-emitting device according to claim 1 or 2, wherein the barrier layer contains silicon dioxide or titanium dioxide.
4. The light-emitting device according to claim 1 or 2, wherein the barrier layer has a thickness of 40 μm to 100 μm.
5. The light-emitting device according to claim 1 or 2, wherein the thickness of the silicone protective layer on the side surface of the flip LED chip is not greater than the thickness of the flip LED chip, and the surface of the light-reflecting layer is not higher than the surface of the electrode.
6. A method of making a light emitting device, comprising:
preparing a barrier layer on the surface of the support film;
preparing a light emitting layer on the surface of the barrier layer, wherein the light emitting layer contains a light conversion material;
preparing a silica gel protective layer with viscosity on the surface of the light emergent layer, wherein the viscosity of the silica gel protective layer is more than 1000 mpa.s;
arranging a plurality of flip LED chips on the surface of the silica gel protective layer, and pressing; after the pressing, the thickness of the silica gel protective layer on the side surface of the flip LED chip is not more than that of the flip LED chip;
curing the pressed silica gel protective layer, and cutting to obtain a single white light chip;
rearranging the white light chips obtained by cutting on the surface of the support film, and filling light reflection glue between the white light chips to prepare a light reflection layer; the surface of the light reflection layer is not higher than the surface of the electrode;
and cutting along the light reflecting layer between the white light chips to obtain the single light-emitting device.
7. The method of claim 6, wherein the light conversion material in the light emitting layer is KSF, KGF, or QD.
8. The light-emitting device according to claim 6 or 7, wherein the light-emitting layer has a thickness of 70 to 100 μm.
9. The light-emitting device according to claim 6 or 7, wherein the barrier layer contains silicon dioxide or titanium dioxide.
10. The light-emitting device according to claim 6 or 7, wherein the barrier layer has a thickness of 40 μm to 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010929255.1A CN111952292A (en) | 2020-09-07 | 2020-09-07 | Light emitting device and method for manufacturing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010929255.1A CN111952292A (en) | 2020-09-07 | 2020-09-07 | Light emitting device and method for manufacturing the same |
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| CN111952292A true CN111952292A (en) | 2020-11-17 |
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| CN202010929255.1A Pending CN111952292A (en) | 2020-09-07 | 2020-09-07 | Light emitting device and method for manufacturing the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116565078A (en) * | 2023-07-07 | 2023-08-08 | 天津德高化成新材料股份有限公司 | White light CSP (chip scale package) suitable for high-power single-sided light emission and packaging method thereof |
| CN117558851A (en) * | 2024-01-05 | 2024-02-13 | 晶能光电股份有限公司 | Light-emitting device, preparation method thereof and light-emitting array structure |
-
2020
- 2020-09-07 CN CN202010929255.1A patent/CN111952292A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116565078A (en) * | 2023-07-07 | 2023-08-08 | 天津德高化成新材料股份有限公司 | White light CSP (chip scale package) suitable for high-power single-sided light emission and packaging method thereof |
| CN116565078B (en) * | 2023-07-07 | 2023-09-15 | 天津德高化成新材料股份有限公司 | White light CSP (chip scale package) suitable for high-power single-sided light emission and packaging method thereof |
| CN117558851A (en) * | 2024-01-05 | 2024-02-13 | 晶能光电股份有限公司 | Light-emitting device, preparation method thereof and light-emitting array structure |
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