CN111952144A - Etching device for semiconductor processing - Google Patents
Etching device for semiconductor processing Download PDFInfo
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- CN111952144A CN111952144A CN202010941277.XA CN202010941277A CN111952144A CN 111952144 A CN111952144 A CN 111952144A CN 202010941277 A CN202010941277 A CN 202010941277A CN 111952144 A CN111952144 A CN 111952144A
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- cavity
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- cooling liquid
- semiconductor processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of plasma etching machine equipment, in particular to an etching device for semiconductor processing, which comprises an etching machine main body and a radio frequency power supply installation cavity, wherein a processing box is arranged on the right side wall of the etching machine main body, an air suction pump is installed at the top of the processing box, the input end of the air suction pump is communicated with an air exhaust pipe, the upper end of the air exhaust pipe is communicated with the etching cavity of the etching machine main body, and the bottom of the processing box is communicated with an air blow pipe.
Description
Technical Field
The invention relates to the technical field of plasma etcher equipment, in particular to an etching device for semiconductor processing.
Background
The plasma etcher is also called a plasma etcher, a plasma plane etcher, a plasma surface treatment instrument, a plasma cleaning system and the like. Plasma etching, the most common form of dry etching, is based on the principle that a gas exposed to an electron field forms a plasma, thereby generating ionized gas and a gas composed of released energetic electrons, thereby forming a plasma or ions, and atoms of the ionized gas, when accelerated by an electric field, release sufficient force to tightly adhere to a material or etch a surface with surface expulsion force.
The etching device for semiconductor processing in the existing market lacks the purpose of treating and discharging high-temperature waste gas generated when etching process gas is finished in the using process, and cannot achieve the purpose of rapidly dissipating heat generated when a radio frequency power supply works while treating and discharging, so that the service life of the radio frequency power supply is reduced, and therefore, the research and development of the etching device for semiconductor processing are urgently needed to solve the problems.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an etching device for semiconductor processing, which solves the problems that the purpose of processing and discharging high-temperature waste gas generated when the etching of process gas is finished is lacked, and the purpose of quickly radiating heat generated when a radio frequency power supply works cannot be achieved while the processing and discharging are carried out, so that the service life of the radio frequency power supply is reduced through the design and the use of a series of structures.
The invention is realized by the following technical scheme:
the utility model provides an etching device for semiconductor processing, includes etching machine main part and radio frequency power supply installation cavity, the right side wall of etching machine main part is equipped with handles the case, the aspiration pump is installed at the top of handling the case, the input intercommunication of aspiration pump has the blast pipe, the upper end of blast pipe with the sculpture chamber of etching machine main part is linked together, the bottom intercommunication of handling the case has the gas blow pipe, the lower extreme of gas blow pipe runs through the radio frequency power supply installation cavity is linked together with the dish of blowing, the maintenance groove has been seted up to the preceding lateral wall of radio frequency power supply installation cavity, it has the access panel to overhaul the inslot lock.
Preferably, the treatment box further comprises a cooling liquid cavity and a filtering cavity which are sequentially arranged from top to bottom, a first air duct is inserted into the top wall of the cooling liquid cavity, the upper end of the first air duct is communicated with the output end of the air extracting pump, the lower end of the first air duct extends to a position below the treatment liquid level in the cooling liquid cavity, second air ducts are inserted into the front side and the rear side of the bottom wall of the cooling liquid cavity, the upper end of the second air duct extends to a position above the treatment liquid level in the cooling liquid cavity, and the lower end of the second air duct is communicated with the filtering cavity; the filter chamber is also internally provided with an active carbon filter layer, an air cotton filter layer and an HEPA filter layer which are sequentially embedded from top to bottom.
Preferably, the front inner side wall and the rear inner side wall of the cooling liquid cavity are respectively and symmetrically provided with a refrigeration piece and a temperature sensor, and the refrigeration piece and the temperature sensor are respectively and electrically connected with a controller at the control end of the etching machine main body.
Preferably, the top front side of the cooling liquid cavity further comprises a liquid injection port which is formed, and a sealing plug is arranged on the liquid injection port.
Preferably, the maintenance board further comprises heat dissipation slots uniformly formed in the maintenance board, and the maintenance board is made of aluminum fiber sound absorption boards.
Preferably, the inboard end of access panel still includes the heat dissipation copper fin of even setting, just heat dissipation copper fin is the setting of U type structure.
Preferably, the air suction pump is electrically connected with a controller at the control end of the etching machine main body.
The invention has the beneficial effects that:
by adopting the structure and the design, the invention solves the problems that the purpose of treating and discharging high-temperature waste gas generated when the process gas etching is finished is lacked, and the purpose of quickly radiating heat generated when a radio frequency power supply works cannot be achieved while the treatment and the discharge are carried out, so that the service life of the radio frequency power supply is reduced;
the invention has novel structure, reasonable design, convenient use and stronger practicability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a front exploded view of the present invention;
FIG. 2 is a rear exploded view of the present invention;
FIG. 3 is a front partial sectional view of a treatment tank of the present invention;
FIG. 4 is a rear partial sectional view of the treatment tank of the present invention.
In the figure: 1-etching machine main body, 2-radio frequency power supply installation cavity, 3-treatment box, 31-cooling liquid cavity, 311-first air guide pipe, 312-second air guide pipe, 313-refrigeration piece, 314-temperature sensor, 315-liquid injection port, 32-filter cavity, 321-active carbon filter layer, 322-air cotton filter layer, 323-HEPA filter layer, 4-air pump, 5-exhaust pipe, 6-air blowing pipe, 7-air blowing disc, 8-maintenance groove, 9-maintenance plate, 91-heat dissipation slot hole and 92-heat dissipation copper fin.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The utility model provides an etching device for semiconductor processing, including etching machine main part 1 and radio frequency power supply installation cavity 2, the right side wall of etching machine main part 1 is equipped with handles case 3, the aspiration pump 4 is installed at the top of handling case 3, the input intercommunication of aspiration pump 4 has blast pipe 5, the upper end of blast pipe 5 is linked together with the etching cavity of etching machine main part 1, the bottom intercommunication of handling case 3 has gas blow pipe 6, the lower extreme of gas blow pipe 6 runs through radio frequency power supply installation cavity 2 and blows set 7 and be linked together, maintenance groove 8 has been seted up to the preceding lateral wall of radio frequency power supply installation cavity 2, the lock has access panel 9 in the maintenance groove 8.
Specifically, the treatment box 3 further comprises a cooling liquid cavity 31 and a filtering cavity 32 which are sequentially arranged from top to bottom, a first air duct 311 is inserted into the top wall of the cooling liquid cavity 31, the upper end of the first air duct 311 is communicated with the output end of the air extracting pump 4, the lower end of the first air duct 311 extends to the position below the treatment liquid level in the cooling liquid cavity 31, second air ducts 312 are inserted into the front side and the rear side of the bottom wall of the cooling liquid cavity 31, the upper end of each second air duct 312 extends to the position above the treatment liquid level in the cooling liquid cavity 31, and the lower end of each second air duct 312 is communicated with the filtering cavity 32; the filtering chamber 32 further comprises an activated carbon filtering layer 321, an air cotton filtering layer 322 and a HEPA filtering layer 323 which are sequentially embedded from top to bottom.
Specifically, the front inner side wall and the rear inner side wall of the cooling liquid cavity 31 are respectively and symmetrically provided with a refrigeration piece 313 and a temperature sensor 314, and the refrigeration piece 313 and the temperature sensor 314 are respectively and electrically connected with a controller at the control end of the etching machine main body 1.
Specifically, the top front side of the cooling liquid cavity 31 further includes a liquid injection port 315, and a sealing plug is disposed on the liquid injection port 315.
Specifically, the access panel 9 further comprises heat dissipation slots 91 uniformly formed therein, and the access panel 9 is made of aluminum fiber sound absorption board material.
Specifically, the inner side end of the access panel 9 further includes uniformly arranged heat dissipation copper fins 92, and the heat dissipation copper fins 92 are arranged in a U-shaped structure.
Specifically, the air pump 4 is electrically connected with a controller at the control end of the etching machine main body 1.
The working principle is as follows: when the device is used, when the semiconductor etching is finished, the air suction pump 4 is controlled to work, the air suction pump 4 drives high-temperature waste gas generated during the etching of process gas in the etching cavity to be conveyed into the cooling liquid cavity 31 at the upper part in the processing box 3 through the exhaust pipe 5 and the first air guide pipe 311, the high-temperature waste gas is converted into low-temperature air flow through the primary filtration and cooling of processing liquid in the cooling liquid cavity 31, the low-temperature air flow is conveyed into the filtering cavity 32 through the second air guide pipe 312, is sequentially filtered through the activated carbon filtering layer 321, the air cotton filtering layer 322 and the HEPA filtering layer 323, and is conveyed to the air blowing disc 7 through the air blowing pipe 6, and the heat generated during the work of the radio-frequency power supply installed in the radio-frequency power supply installation cavity 2 is;
the filtering by the activated carbon filter layer 321, the air cotton filter layer 322 and the HEPA filter layer 323 further improves the effect of continuously filtering the air flow after being filtered by the treatment liquid, and simultaneously, the moisture in the air flow can be filtered and dehumidified by the moisture absorption effect of the air cotton filter layer 322, so that the damage of the humidity to the radio frequency power supply when the radio frequency power supply is blown by the air is avoided;
the front inner side wall and the rear inner side wall of the cooling liquid cavity 31 are respectively and symmetrically provided with a refrigerating sheet 313 and a temperature sensor 314, the refrigerating sheet 313 and the temperature sensor 314 are respectively and electrically connected with a controller at a control end of the etching machine main body 1, when the temperature sensor 314 detects that the temperature of the treatment liquid exceeds a preset threshold value of the controller, a signal is sent to the controller, the controller controls the refrigerating sheet 313 to refrigerate, the treatment liquid in the cooling liquid cavity 31 is refrigerated, and the effect of converting constant-temperature refrigeration of high-temperature waste gas into low-temperature airflow is achieved;
moreover, the front side of the top of the cooling liquid cavity 31 also comprises a liquid injection port 315, and the liquid injection port 315 is provided with a sealing plug, so that the purpose of injecting the treatment liquid in the cooling liquid cavity 31 can be conveniently realized;
the maintenance board 9 is provided with the heat dissipation slotted holes 91 which are uniformly formed, and the maintenance board 9 is made of an aluminum fiber sound absorption board material, so that on one hand, the heat dissipation slotted holes 91 are utilized for rapidly ventilating and dissipating heat generated when the radio frequency power supply works, and on the other hand, the excellent sound absorption performance of the aluminum fiber sound absorption board is utilized, and the purposes of absorbing sound and reducing noise generated when the device works can be achieved;
moreover, the inner side end of the access panel 9 also comprises uniformly arranged heat dissipation copper fins 92, and the heat dissipation copper fins 92 are arranged in a U-shaped structure, so that the effect of quickly dissipating heat generated by the radio frequency power supply during working can be further improved;
further, under the design and use of the structure, the invention solves the problems that the purpose of processing and discharging high-temperature waste gas generated when the etching of the process gas is finished is lacked, and the purpose of quickly radiating heat generated when the radio frequency power supply works cannot be achieved while the processing and discharging are carried out, so that the service life of the radio frequency power supply is reduced;
the control mode of the electric elements such as the air pump 4, the refrigerating plate 313 and the temperature sensor 314 is controlled by a controller at the control end of the etching machine main body 1 matched with the electric elements, the controller is a PLC controller, and a control circuit can be realized by simple programming of a person skilled in the art, belongs to the common knowledge in the field, is only used without improvement, and is mainly used for protecting a mechanical device, so the control mode and the circuit connection are not described in detail in the invention.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. An etching device for semiconductor processing comprises an etching machine body (1) and a radio frequency power supply installation cavity (2), and is characterized in that: the right side wall of etching machine main part (1) is equipped with handles case (3), aspiration pump (4) are installed at the top of handling case (3), the input intercommunication of aspiration pump (4) has blast pipe (5), the upper end of blast pipe (5) with the sculpture chamber of etching machine main part (1) is linked together, the bottom intercommunication of handling case (3) has gas blow pipe (6), the lower extreme of gas blow pipe (6) runs through radio frequency power supply installation cavity (2) and blowing dish (7) are linked together, maintenance groove (8) have been seted up to the preceding lateral wall of radio frequency power supply installation cavity (2), the lock has access panel (9) in maintenance groove (8).
2. An etching apparatus for semiconductor processing according to claim 1, wherein: the treatment box (3) is internally provided with a cooling liquid cavity (31) and a filtering cavity (32) which are sequentially arranged from top to bottom, the top wall of the cooling liquid cavity (31) is spliced with a first air duct (311), the upper end of the first air duct (311) is communicated with the output end of the air suction pump (4), the lower end of the first air duct (311) extends to the position below the treatment liquid level in the cooling liquid cavity (31), the front side and the rear side of the bottom wall of the cooling liquid cavity (31) are spliced with second air ducts (312), the upper end of each second air duct (312) extends to the position above the treatment liquid level in the cooling liquid cavity (31), and the lower end of each second air duct (312) is communicated with the filtering cavity (32); the filter chamber (32) is internally provided with an active carbon filter layer (321), an air cotton filter layer (322) and an HEPA filter layer (323) which are sequentially embedded from top to bottom.
3. An etching apparatus for semiconductor processing according to claim 2, wherein: the front inner side wall and the rear inner side wall of the cooling liquid cavity (31) are respectively and symmetrically provided with a refrigerating sheet (313) and a temperature sensor (314), and the refrigerating sheet (313) and the temperature sensor (314) are respectively and electrically connected with a controller at the control end of the etching machine main body (1).
4. An etching apparatus for semiconductor processing according to claim 2, wherein: the top front side of cooling liquid chamber (31) still includes notes liquid mouth (315) of seting up, just it is equipped with the sealing plug on liquid mouth (315) to annotate.
5. An etching apparatus for semiconductor processing according to claim 1, wherein: the maintenance board (9) is further provided with heat dissipation slotted holes (91) which are uniformly formed, and the maintenance board (9) is made of aluminum fiber sound absorption boards.
6. An etching apparatus for semiconductor processing according to claim 5, wherein: the inboard end of access panel (9) still includes heat dissipation copper fin (92) of even setting, just heat dissipation copper fin (92) are the setting of U type structure.
7. An etching apparatus for semiconductor processing according to claim 1, wherein: the air pump (4) is electrically connected with a controller at the control end of the etching machine main body (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010941277.XA CN111952144A (en) | 2020-09-09 | 2020-09-09 | Etching device for semiconductor processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010941277.XA CN111952144A (en) | 2020-09-09 | 2020-09-09 | Etching device for semiconductor processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111952144A true CN111952144A (en) | 2020-11-17 |
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ID=73357152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010941277.XA Pending CN111952144A (en) | 2020-09-09 | 2020-09-09 | Etching device for semiconductor processing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111952144A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113556926A (en) * | 2021-07-16 | 2021-10-26 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and cooling assembly and cooling method thereof |
| CN115527830A (en) * | 2022-09-15 | 2022-12-27 | 东莞市晟鼎精密仪器有限公司 | Semiconductor etching device for optimizing plasma distribution |
-
2020
- 2020-09-09 CN CN202010941277.XA patent/CN111952144A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113556926A (en) * | 2021-07-16 | 2021-10-26 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and cooling assembly and cooling method thereof |
| CN115527830A (en) * | 2022-09-15 | 2022-12-27 | 东莞市晟鼎精密仪器有限公司 | Semiconductor etching device for optimizing plasma distribution |
| CN115527830B (en) * | 2022-09-15 | 2023-05-26 | 东莞市晟鼎精密仪器有限公司 | Semiconductor etching device for optimizing plasma distribution |
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